WO2000026995A1 - Connection structure of electric lead-in terminal - Google Patents

Connection structure of electric lead-in terminal Download PDF

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Publication number
WO2000026995A1
WO2000026995A1 PCT/JP1999/006037 JP9906037W WO0026995A1 WO 2000026995 A1 WO2000026995 A1 WO 2000026995A1 JP 9906037 W JP9906037 W JP 9906037W WO 0026995 A1 WO0026995 A1 WO 0026995A1
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WO
WIPO (PCT)
Prior art keywords
ceramic solid
terminal
fitting member
hole
electric lead
Prior art date
Application number
PCT/JP1999/006037
Other languages
French (fr)
Japanese (ja)
Inventor
Masanori Ono
Original Assignee
Applied Materials Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Applied Materials Inc. filed Critical Applied Materials Inc.
Priority to EP99951160A priority Critical patent/EP1126547A1/en
Publication of WO2000026995A1 publication Critical patent/WO2000026995A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
    • H01R4/62—Connections between conductors of different materials; Connections between or with aluminium or steel-core aluminium conductors

Definitions

  • the present invention relates to a structure in which a conductive element such as an electrode is embedded in a ceramic solid, such as a heater or an electrostatic chuck used in a semiconductor manufacturing apparatus or the like.
  • the present invention relates to a technique for connecting an introduction terminal.
  • ceramic ceramics in which electric heating elements (heaters) are embedded in ceramic solids, and electrostatic chucks in which electrodes are embedded in ceramic solids are used in many fields, including semiconductor manufacturing equipment.
  • an electricity introduction terminal 1 is fitted into a hole 3 provided in a ceramic solid 2 and a hole 3 is formed. It is in contact with the conductive element 4 exposed on the inner wall surface.
  • an electrostatic chuck or the like in a semiconductor manufacturing apparatus may be exposed to a high temperature environment of, for example, 600 ° C. or more.
  • a high temperature environment of, for example, 600 ° C. or more.
  • a difference in thermal expansion between the ceramic solid body and the electric lead-in terminal becomes a problem.
  • a refractory metal having a coefficient of thermal expansion close to that of a ceramic solid for example, tungsten (W), molybdenum (Mo), tantalum (Ta), or the like has been used. It is generally used.
  • refractory metals such as W, Mo, and Ta have low oxidation resistance, and there is a problem that the portion exposed from the ceramic solid is likely to deteriorate when exposed to the atmosphere.
  • the above problem of low oxidation resistance can be solved by using an electric lead-in terminal made of nickel-iron (Ni-Fe) alloy coated with nickel (Ni).
  • Ni-Fe nickel-iron
  • Ni nickel
  • this alloy has a sudden increase in thermal expansion coefficient from 400 ° C or higher. Therefore, when the temperature changes from a low temperature range to a high temperature range, a large thermal stress is generated between the ceramic solid and the electric introduction terminal due to a difference in thermal expansion, which may impair the reliability of the electrical connection.
  • an object of the present invention is to provide a means for reducing the thermal stress generated between a ceramic solid and an electric lead-in terminal. Disclosure of the invention
  • the present invention provides a connection structure of an electric lead-in terminal for connecting an electric lead-in terminal to a conductive element embedded in a ceramic solid, wherein a hole is provided in the ceramic solid so as to cross the conductive element.
  • the lead-in terminal is made of a high-melting-point metal having a thermal expansion coefficient close to that of a ceramic solid, and has substantially the same shape as the internal space of the hole.
  • a terminal member having: a fitting member fitted in the ceramic solid hole, and a conductive element exposed on the inner wall surface of the hole and the fitting member are electrically connected.
  • the terminal member is preferably made of a Ni-coated Ni-Fe alloy in consideration of oxidation resistance.
  • a male screw portion provided at one end of the fitting member or the terminal member, and a female screw portion provided at the other end of the fitting member or the terminal member. Can be considered. It is effective to interpose a conductive bonding agent between the male and female threads to reduce the electrical resistance.
  • a conductive bonding agent is interposed between the inner wall surface (the inner peripheral surface and the bottom surface) of the hole and the fitting member, and a boundary between the outer surface of the fitting member and the outer surface of the terminal member; By disposing a conductive bonding agent at the boundary between the boundary and the surface of the ceramic solid, the fitting member can be shielded from the atmosphere.
  • the conductive bonding agent is preferably a conductive brazing material such as silver brazing or copper brazing.
  • FIG. 1 is an enlarged cross-sectional view showing a conventional connection structure between an electric introduction terminal and an electrode.
  • FIG. 2 is a schematic diagram of a semiconductor manufacturing apparatus having an electrostatic chuck to which the present invention can be applied.
  • FIG. 3 is an enlarged cross-sectional view showing a connection structure between an electric lead-in terminal and an electrode in the electrostatic chuck of FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 2 is a schematic view showing a semiconductor manufacturing apparatus 14 such as a CVD apparatus or a PVD apparatus in which an electrostatic chuck 10 to which the present invention can be applied is disposed in a processing chamber 12.
  • the electrostatic chuck 10 is used for holding and fixing the silicon wafer 16.
  • the electrostatic chuck 10 is basically composed of a ceramic solid 18 which is a dielectric, and an electrode film 20 disposed inside the ceramic solid 18 in parallel with the upper surface of the ceramic solid 18. It is based on the principle that a voltage is applied to 20 to induce charging of opposite polarity to the silicon wafer 16 and the electrode film 20. That is, the electrostatic attraction during the charging of the opposite polarity pulls the silicon wafer 16 against the electrostatic chuck 10, thereby fixing the silicon wafer 16.
  • the electrode film 20 is thin and located at a portion very close to the upper surface of the ceramic solid 18. Therefore, in the illustrated embodiment, the electric introduction terminal 22 is electrically connected to the electrode film 20 and is connected to the electrode 24 extending to the lower part of the ceramic solid 18.
  • FIG. 3 is an enlarged cross-sectional view clearly showing a connection structure between the electrode 24 embedded in the ceramic solid 18 and the electricity introducing terminal 22 in the electrostatic check 10 of FIG.
  • a hole 26 is formed in the ceramic solid 18 so as to penetrate the buried electrode 24 so that the electric lead-in terminal 22 is fitted into the hole 26. It has become.
  • the electric lead-in terminal 22 has substantially the same shape as the hole 26 and is fitted to the hole 26. And a terminal member 30 that enables connection to a connection terminal or the like (not shown) of a power supply circuit. Since the fitting member 28 has the same shape as the hole 26, there is no portion protruding from the surface (lower surface) of the ceramic solid 18. Further, the terminal member 60 is entirely disposed outside the surface (lower surface) of the ceramic solid 18.
  • the fitting member 28 is made of a refractory metal having a coefficient of thermal expansion close to that of the ceramic solid 18 such as W, Mo or Ta.
  • the terminal member 30 is made of a material having excellent chemical durability, for example, a Ni—Fe alloy, preferably Kovar (registered trademark) in terms of oxidation resistance, and more preferably Ni Consists of coated ones.
  • a male screw part 32 is formed at one end of the fitting member 28, and a female screw part 34 for receiving the male screw part 32 is formed at one end of the terminal member 30. And the terminal member 30 are connected.
  • the screw portion indicated by reference numeral 36 is for facilitating connection with a connection terminal (not shown) of a power supply circuit.
  • Such an electric lead-in terminal 22 is formed by sealing a suitable conductive bonding agent 38, for example, a conductive brazing material such as silver brazing or copper brazing, between the male screw member 32 and the female screw portion 34.
  • the terminal member 30 and the fitting member 28 are connected to each other. The reason why the conductive bonding agent 38 is interposed between the fitting member 28 and the terminal member 30 is to increase the contact area between the two members 28 and 30 and to reduce the electrical resistance as much as possible. is there.
  • the electric introduction terminal 22 is fitted and attached to the hole 26 formed in the ceramic solid 18. Only the fitting member 28 of the electric lead-in terminal 22 is located inside the hole 26, and the surface (lower surface) of the ceramic solid 18 and the end face of the fitting member 28 are almost flush with each other. . Furthermore, a suitable conductive bonding agent 40, for example, a conductive brazing material such as silver brazing or copper brazing, is provided between the fitting member 28 and the inner wall surface (inner peripheral surface and bottom surface) of the hole 26. Intervened. Thereby, the electrical connection between the electrode 24 buried in the ceramic solid 18 and exposed from the inner wall surface of the hole 26 and the fitting member 28 is reliably performed.
  • a suitable conductive bonding agent 40 for example, a conductive brazing material such as silver brazing or copper brazing
  • the same conductive bonding agent 42 as described above may be disposed on the boundary between the outer surface of the fitting member 28 and the outer surface of the terminal member 30 and on the surface of the ceramic solid 18 around the boundary. It is valid.
  • the bonding agent 42 completely covers the surface of the fitting member 28 in the hole 26 and functions as a protective film against oxidation and the like.
  • the terminal member 30 is coated with Ni, the bondability with the brazing material is improved.
  • a connection terminal of a power supply circuit (not shown) is connected to the screw portion 36 of the terminal member 30 and the power is turned on, a voltage is applied to the electrode film 20 via the electrode 24 and the electrostatic chuck 1
  • the silicon wafer 16 on 0 is electrostatically fixed.
  • the material of the terminal member 30 is a Ni—Fe alloy such as Kovar (registered trademark) coated with Ni, so that it is sufficiently resistant to oxidation and the like.
  • the present invention is not limited to the above embodiments.
  • the above-described embodiment is an example in which the present invention is applied to an electrostatic chuck.
  • the electric introduction terminal is connected to an electric heating element of a ceramic heater.
  • the present invention can be applied to such cases.
  • a thermal stress generated between the ceramic solid and the electric lead-in terminal can be reduced.
  • the reliability of connectivity can be improved.
  • the portion of the electric lead-in terminal exposed to the outside can have chemical durability, the durability against gas in the surrounding environment can be improved.
  • the present invention is particularly effective when applied to an electrostatic chuck or a heater used in an environment where heat fluctuation is large, such as a semiconductor manufacturing apparatus.

Landscapes

  • Resistance Heating (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An electric lead-in terminal connection structure for connecting an electric lead-in terminal to a conductive element buried in a ceramic solid having a hole formed therein so as to cross the conductive element. The electric lead-in terminal consists of a high-melting-point metal close in thermal expansion coefficient to the ceramic solid, and comprises a fitting member substantially the same in shape as the inner space of the hole and a chemical-durability terminal member to be joined with the fitting member. The fitting member is fitted into the hole in the ceramic solid for electrical connection with the conductive element exposed on the inner wall surface of the hole. The above construction allows only the fitting member to contact the ceramic solid, thereby reducing a thermal stress between the electric lead-in terminal and the ceramic solid.

Description

明 細 書  Specification
電気導入端子の接続構造 技術分野  Connection structure of electrical lead-in terminal
本発明は、 半導体製造装置等に用いられているヒータ一ゃ静電チャック等の、 セラミック固体に電極等の導電要素が埋め込まれている構造体に関し、 特に、 セ ラミック固体内の導電要素に電気導入端子を接続する技術に関する。 背景技術  The present invention relates to a structure in which a conductive element such as an electrode is embedded in a ceramic solid, such as a heater or an electrostatic chuck used in a semiconductor manufacturing apparatus or the like. The present invention relates to a technique for connecting an introduction terminal. Background art
現在、 セラミック固体に電熱要素 （ヒーター） を埋め込んだセラミックスヒ一 夕一や、 セラミック固体に電極を埋め込んだ静電チャックが、 半導体製造装置を 始めとして多くの分野に使用されている。  At present, ceramic ceramics in which electric heating elements (heaters) are embedded in ceramic solids, and electrostatic chucks in which electrodes are embedded in ceramic solids are used in many fields, including semiconductor manufacturing equipment.
この電熱要素や電極等の導電要素に電気を導入するために、 従来一般には、 図 1に示すように、 電気導入端子 1をセラミック固体 2に設けられた穴 3に嵌め込 み、 穴 3の内壁面に露出している導電要素 4と接触させている。  Conventionally, in order to introduce electricity to conductive elements such as electric heating elements and electrodes, as shown in FIG. 1, an electricity introduction terminal 1 is fitted into a hole 3 provided in a ceramic solid 2 and a hole 3 is formed. It is in contact with the conductive element 4 exposed on the inner wall surface.
ところで、 半導体製造装置における静電チャック等は例えば 6 0 0 °C以上の高 温環境に曝されることがある。 このような高温となる環境下では、 セラミック固 体と電気導入端子との間の熱膨張の差が問題となる。  Incidentally, an electrostatic chuck or the like in a semiconductor manufacturing apparatus may be exposed to a high temperature environment of, for example, 600 ° C. or more. In such a high temperature environment, a difference in thermal expansion between the ceramic solid body and the electric lead-in terminal becomes a problem.
そこで、 従来においては、 電気導入端子の材料として、 高融点金属であって、 セラミック固体の熱膨張係数に近いもの、 例えばタングステン （W) やモリブデ ン （M o )、 タンタル （T a ) 等を用いるのが一般的である。  Therefore, conventionally, as a material for the electric lead-in terminal, a refractory metal having a coefficient of thermal expansion close to that of a ceramic solid, for example, tungsten (W), molybdenum (Mo), tantalum (Ta), or the like has been used. It is generally used.
しかしながら、 Wや M o、 T a等の高融点金属は耐酸化性が弱く、 セラミック 固体から露出した部分が大気に触れると劣化しやすいという問題がある。  However, refractory metals such as W, Mo, and Ta have low oxidation resistance, and there is a problem that the portion exposed from the ceramic solid is likely to deteriorate when exposed to the atmosphere.
また、 上記の耐酸化性が弱いという問題点は、 二ヅケル （N i ) コートを施し たニッケル—鉄 （N i— F e ) 合金から成る電気導入端子を用いることで解決す ることができるが、 この合金は 4 0 0 °C以上から急激に熱膨張係数が上昇するた め、 低温域から高温域に温度が変化した場合、 熱膨張差からセラミック固体と電 気導入端子との間で大きな熱応力が発生し、 電気的接続の信頼性を損なうおそれ か'める。 In addition, the above problem of low oxidation resistance can be solved by using an electric lead-in terminal made of nickel-iron (Ni-Fe) alloy coated with nickel (Ni). However, this alloy has a sudden increase in thermal expansion coefficient from 400 ° C or higher. Therefore, when the temperature changes from a low temperature range to a high temperature range, a large thermal stress is generated between the ceramic solid and the electric introduction terminal due to a difference in thermal expansion, which may impair the reliability of the electrical connection.
そこで、 本発明の目的は、 セラミック固体と電気導入端子との間に生ずる熱応 力を低減する手段を提供することにある。 発明の開示  Accordingly, an object of the present invention is to provide a means for reducing the thermal stress generated between a ceramic solid and an electric lead-in terminal. Disclosure of the invention
上記目的を達成するために、 本発明は、 セラミック固体内に埋設された導電要 素に電気導入端子を接続する電気導入端子の接続構造において、 セラミック固体 に導電要素を横切るよう穴を設け、 電気導入端子を、 セラミック固体の熱膨張係 数に近い高融点金属から成り且つ穴の内部空間と実質的に同形の嵌合部材と、 嵌 合部材に連結手段を介して連結される化学的耐久性を有する端子部材とから構成 し、 嵌合部材をセラミック固体の穴に嵌合して、 穴の内壁面に露出している導電 要素と嵌合部材とを電気的に接続して成ることを特徴としている。  In order to achieve the above object, the present invention provides a connection structure of an electric lead-in terminal for connecting an electric lead-in terminal to a conductive element embedded in a ceramic solid, wherein a hole is provided in the ceramic solid so as to cross the conductive element. The lead-in terminal is made of a high-melting-point metal having a thermal expansion coefficient close to that of a ceramic solid, and has substantially the same shape as the internal space of the hole. And a terminal member having: a fitting member fitted in the ceramic solid hole, and a conductive element exposed on the inner wall surface of the hole and the fitting member are electrically connected. And
この構成においては、 セラミック固体の穴に電気導入端子を嵌め込んだ場合、 嵌合部材が穴に嵌合され、 端子部材のみが露出する。 嵌合部材とセラミック固体 との間の熱膨張差は少ないので、 両者間に大きな熱応力が生じることはなく、 ま た、 露出している端子部材は耐酸化性のような化学的耐久性を有しているので、 接触ガスによる劣化も防止される。  In this configuration, when the electric introduction terminal is fitted into the hole of the ceramic solid, the fitting member is fitted into the hole, and only the terminal member is exposed. Since the thermal expansion difference between the mating member and the ceramic solid is small, there is no large thermal stress between them, and the exposed terminal members have chemical durability such as oxidation resistance. As a result, deterioration due to contact gas is also prevented.
嵌合部材を構成する高融点金属としては、 W、 M o又は T a等が好ましい。 また、 端子部材については、 耐酸化性を考慮した場合、 N iコートの N i— F e合金から成ることが好適である。  As the high melting point metal forming the fitting member, W, Mo, Ta or the like is preferable. Further, the terminal member is preferably made of a Ni-coated Ni-Fe alloy in consideration of oxidation resistance.
嵌合部材と端子部材とを連結手段としては、 嵌合部材又は端子部材の一方の一 端に設けられた雄ねじ部と、 嵌合部材又は端子部材の他方の一端に設けられた雌 ねじ部とから成るものが考えられ。 雄ねじ部と雌ねじ部との間に導電性の接合剤 を介在させることが、 電気抵抗を低減するので有効である。 また、 穴の内壁面 （内周面及び底面） と嵌合部材との間に導電性の接合剤を介 在させると共に、 嵌合部材の外面と端子部材の外面との間の境界部、 及び、 前記 境界部とセラミック固体の表面との間の境界部に導電性の接合剤を配することで、 嵌合部材を雰囲気から遮断することができる。 As a connecting means for connecting the fitting member and the terminal member, a male screw portion provided at one end of the fitting member or the terminal member, and a female screw portion provided at the other end of the fitting member or the terminal member. Can be considered. It is effective to interpose a conductive bonding agent between the male and female threads to reduce the electrical resistance. In addition, a conductive bonding agent is interposed between the inner wall surface (the inner peripheral surface and the bottom surface) of the hole and the fitting member, and a boundary between the outer surface of the fitting member and the outer surface of the terminal member; By disposing a conductive bonding agent at the boundary between the boundary and the surface of the ceramic solid, the fitting member can be shielded from the atmosphere.
なお、 導電性接合剤は銀ロウや銅ロウのような導電性ロウ材料が好適である。 本発明の上記及びその他の特徴や利点は、 添付図面を参照しての以下の詳細な 説明を読むことで、 当業者にとり明らかとなろう。 図面の簡単な説明  The conductive bonding agent is preferably a conductive brazing material such as silver brazing or copper brazing. These and other features and advantages of the present invention will become apparent to one of ordinary skill in the art upon reading the following detailed description, with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE FIGURES
図 1は、 従来の電気導入端子と電極との接続構造を示す拡大断面図である。 図 2は、 本発明が適用可能な静電チヤックを有する半導体製造装置の概略図で ある。  FIG. 1 is an enlarged cross-sectional view showing a conventional connection structure between an electric introduction terminal and an electrode. FIG. 2 is a schematic diagram of a semiconductor manufacturing apparatus having an electrostatic chuck to which the present invention can be applied.
図 3は、 図 2の静電チャックにおける、 電気導入端子と電極との接続構造を示 す拡大断面図である。 発明を実施するための最良の形態  FIG. 3 is an enlarged cross-sectional view showing a connection structure between an electric lead-in terminal and an electrode in the electrostatic chuck of FIG. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 図面を参照して本発明の好適な実施形態について詳細に説明する。  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
図 2は、 本発明が適用可能な静電チヤック 1 0が処理チャンバ 1 2内に配置さ れた C V D装置や P V D装置等の半導体製造装置 1 4を示す概略図である。 静電 チャック 1 0は、 シリコンゥヱハ 1 6を保持、 固定するために用いられる。 静電 チャック 1 0は、 誘電体であるセラミック固体 1 8と、 その内部に、 セラミック 固体 1 8の上面に対して平行に配置された電極膜 2 0とから基本的には構成され、 電極膜 2 0に電圧を印加してシリコンウェハ 1 6と電極膜 2 0とに逆極性の帯電 を誘導する原理に基づいている。 即ち、 逆極性の帯電の間の静電吸引力が静電チ ャヅク 1 0に対してシリコンウェハ 1 6を引っ張り、 それによりシリコンウェハ 1 6が固定される。 電極膜 2 0に電圧を印加するために、 電気導入端子 2 2が静電チャック 1 0に は設けられているが、 電極膜 2 0は薄く且つセラミック固体 1 8の上面に極めて 近い部分に配置されるため、 電気導入端子 2 2は、 図示実施形態では、 電極膜 2 0に電気的に接続されセラミック固体 1 8の下部まで延びている電極 2 4に接続 されるようになつている。 FIG. 2 is a schematic view showing a semiconductor manufacturing apparatus 14 such as a CVD apparatus or a PVD apparatus in which an electrostatic chuck 10 to which the present invention can be applied is disposed in a processing chamber 12. The electrostatic chuck 10 is used for holding and fixing the silicon wafer 16. The electrostatic chuck 10 is basically composed of a ceramic solid 18 which is a dielectric, and an electrode film 20 disposed inside the ceramic solid 18 in parallel with the upper surface of the ceramic solid 18. It is based on the principle that a voltage is applied to 20 to induce charging of opposite polarity to the silicon wafer 16 and the electrode film 20. That is, the electrostatic attraction during the charging of the opposite polarity pulls the silicon wafer 16 against the electrostatic chuck 10, thereby fixing the silicon wafer 16. Although an electric lead-in terminal 22 is provided on the electrostatic chuck 10 to apply a voltage to the electrode film 20, the electrode film 20 is thin and located at a portion very close to the upper surface of the ceramic solid 18. Therefore, in the illustrated embodiment, the electric introduction terminal 22 is electrically connected to the electrode film 20 and is connected to the electrode 24 extending to the lower part of the ceramic solid 18.
図 3は、 図 2の静電チェック 1 0におけるセラミック固体 1 8に埋設されてい る電極 2 4と電気導入端子 2 2との接続構造を明瞭に示した拡大断面図である。 図 3に示すように、 セラミック固体 1 8には、 埋設された電極 2 4を貫通する形 で穴 2 6が形成されており、 この穴 2 6に電気導入端子 2 2が嵌合されるように なっている。  FIG. 3 is an enlarged cross-sectional view clearly showing a connection structure between the electrode 24 embedded in the ceramic solid 18 and the electricity introducing terminal 22 in the electrostatic check 10 of FIG. As shown in FIG. 3, a hole 26 is formed in the ceramic solid 18 so as to penetrate the buried electrode 24 so that the electric lead-in terminal 22 is fitted into the hole 26. It has become.
本実施形態においては、 電気導入端子 2 2は、 前記穴 2 6と実質的に同形であ り当該穴 2 6に嵌合される嵌合部材 2 8と、 この嵌合部材 2 8に連結され電源回 路の接続端子等 （図示せず） との接続を可能とする端子部材 3 0とから構成され ている。 嵌合部材 2 8は穴 2 6と同形であるので、 セラミック固体 1 8の表面 (下面） から突出する部分はない。 また、 端子部材 6 0は、 その全体がセラミヅ ク固体 1 8の表面 （下面） より外側に配置されることになる。  In the present embodiment, the electric lead-in terminal 22 has substantially the same shape as the hole 26 and is fitted to the hole 26. And a terminal member 30 that enables connection to a connection terminal or the like (not shown) of a power supply circuit. Since the fitting member 28 has the same shape as the hole 26, there is no portion protruding from the surface (lower surface) of the ceramic solid 18. Further, the terminal member 60 is entirely disposed outside the surface (lower surface) of the ceramic solid 18.
嵌合部材 2 8は、 W、 M o又は T aのようなセラミック固体 1 8の熱膨張係数 に近い高融点金属から成る。 一方、 端子部材 3 0は、 化学的耐久性に優れた材料、 例えば耐酸化性の面からは、 N i— F e合金、 好ましくは K o v a r (登録商 標） から成り、 より好ましくは N iコートされたものから成る。  The fitting member 28 is made of a refractory metal having a coefficient of thermal expansion close to that of the ceramic solid 18 such as W, Mo or Ta. On the other hand, the terminal member 30 is made of a material having excellent chemical durability, for example, a Ni—Fe alloy, preferably Kovar (registered trademark) in terms of oxidation resistance, and more preferably Ni Consists of coated ones.
嵌合部材 2 8の一端には雄ねじ部 3 2が形成され、 また、 この雄ねじ部 3 2を 受け入れる雌ねじ部 3 4が端子部材 3 0の一端に形成されており、 これにより嵌 合部材 2 8と端子部材 3 0とが連結されるようになっている。 勿論、 嵌合部材 2 8と端子部材 3 0との連結手段は他の手段であってもよい。 なお、 符号 3 6で示 すねじ部は、 電源回路の接続端子 （図示せず） 等との接続を容易にするためのも のである。 このような電気導入端子 2 2は、 雄ねじ部材 3 2と雌ねじ部 3 4との間に適当 な導電性接合剤 3 8、 例えば銀ロウや銅ロウのような導電性ロウ材料を封入した 状態で、 端子部材 3 0と嵌合部材 2 8とを連結して構成されることが好ましい。 導電性接合剤 3 8を嵌合部材 2 8と端子部材 3 0との間に介在させる理由は、 両 部材 2 8， 3 0間の接触面積を増し、 電気抵抗を可能な限り小さくするためであ る。 A male screw part 32 is formed at one end of the fitting member 28, and a female screw part 34 for receiving the male screw part 32 is formed at one end of the terminal member 30. And the terminal member 30 are connected. Of course, the connecting means between the fitting member 28 and the terminal member 30 may be other means. The screw portion indicated by reference numeral 36 is for facilitating connection with a connection terminal (not shown) of a power supply circuit. Such an electric lead-in terminal 22 is formed by sealing a suitable conductive bonding agent 38, for example, a conductive brazing material such as silver brazing or copper brazing, between the male screw member 32 and the female screw portion 34. Preferably, the terminal member 30 and the fitting member 28 are connected to each other. The reason why the conductive bonding agent 38 is interposed between the fitting member 28 and the terminal member 30 is to increase the contact area between the two members 28 and 30 and to reduce the electrical resistance as much as possible. is there.
前述したように、 電気導入端子 2 2は、 セラミック固体 1 8に形成された穴 2 6に嵌め込まれて取り付けられる。 穴 2 6の内部に位置するのは、 電気導入端子 2 2の嵌合部材 2 8のみであり、 セラミック固体 1 8の表面 （下面） と嵌合部材 2 8の端面とはほぼ同一面となる。 更に、 嵌合部材 2 8と穴 2 6の内壁面 （内周 面及び底面） との間には、 適当な導電性接合剤 4 0、 例えば銀ロウや銅ロウのよ うな導電性ロウ材料が介在される。 これにより、 セラミック固体 1 8に埋設され 穴 2 6の内壁面から露出している電極 2 4と嵌合部材 2 8との間の電気的接続が 確実に行われる。 また、 嵌合部材 2 8の外面と端子部材 3 0の外面との間の境界 部、 及び、 その周囲のセラミック固体 1 8の表面に、 前記と同じ導電性接合剤 4 2を配することが有効である。 この接合剤 4 2は、 穴 2 6内の嵌合部材 2 8の表 面を完全に覆い、 酸化等に対する防御膜としての機能を果たすものである。 なお、 端子部材 3 0が N iコートされている場合、 ロウ材料との接合性が良好となる。 上記構成において、 端子部材 3 0のねじ部 3 6に、 図示しない電源回路の接続 端子を接続し電源を投入すると、 電極 2 4を介して電極膜 2 0に電圧が印加され、 静電チャック 1 0上のシリコンウェハ 1 6が静電的に固定される。 そして、 半導 体製造プロセスが開始され、 処理チャンバ 1 2内の温度が上昇した場合、 セラミ ヅク固体 1 8に接しているのは嵌合部材 2 8のみであり、 両者間の熱膨張差が少 ないため、 セラミック固体 1 8と電気導入端子 2 2との間に発生する熱応力は極 めて小さく、 これら部材 1 8， 2 2に対する熱的影響は殆どない。 その結果、 電 気導入端子 2 2と電極 2 4との間の電気的接続の信頼性も高い状態で維持される。 また、 電気導入端子 2 2の端子部材 3 0は、 周囲温度が 4 0 0 °Cを越えた時点か ら熱膨張の度合いが急激に大きくなるが、 この端子部材 3 0はセラミック固体 1 8の外部にあるため、 セラミック固体 1 8に熱応力を加えることはない。 加えて 端子部材 3 0の材料が N iコートされた K o v a r (登録商標） のような N i— F e合金であるので、 酸化等に対して十分に耐え得るものとなっている。 As described above, the electric introduction terminal 22 is fitted and attached to the hole 26 formed in the ceramic solid 18. Only the fitting member 28 of the electric lead-in terminal 22 is located inside the hole 26, and the surface (lower surface) of the ceramic solid 18 and the end face of the fitting member 28 are almost flush with each other. . Furthermore, a suitable conductive bonding agent 40, for example, a conductive brazing material such as silver brazing or copper brazing, is provided between the fitting member 28 and the inner wall surface (inner peripheral surface and bottom surface) of the hole 26. Intervened. Thereby, the electrical connection between the electrode 24 buried in the ceramic solid 18 and exposed from the inner wall surface of the hole 26 and the fitting member 28 is reliably performed. Further, the same conductive bonding agent 42 as described above may be disposed on the boundary between the outer surface of the fitting member 28 and the outer surface of the terminal member 30 and on the surface of the ceramic solid 18 around the boundary. It is valid. The bonding agent 42 completely covers the surface of the fitting member 28 in the hole 26 and functions as a protective film against oxidation and the like. When the terminal member 30 is coated with Ni, the bondability with the brazing material is improved. In the above configuration, when a connection terminal of a power supply circuit (not shown) is connected to the screw portion 36 of the terminal member 30 and the power is turned on, a voltage is applied to the electrode film 20 via the electrode 24 and the electrostatic chuck 1 The silicon wafer 16 on 0 is electrostatically fixed. Then, when the semiconductor manufacturing process is started and the temperature in the processing chamber 12 rises, only the fitting member 28 is in contact with the ceramic solid 18, and a difference in thermal expansion between the two is caused. Due to the small amount, the thermal stress generated between the ceramic solid 18 and the electric lead-in terminal 22 is extremely small, and there is almost no thermal effect on these members 18 and 22. As a result, the reliability of the electrical connection between the electricity introduction terminal 22 and the electrode 24 is also maintained in a high state. Further, the degree of thermal expansion of the terminal member 30 of the electric lead-in terminal 22 increases sharply from the time when the ambient temperature exceeds 400 ° C. Since it is external, no thermal stress is applied to the ceramic solid 18. In addition, the material of the terminal member 30 is a Ni—Fe alloy such as Kovar (registered trademark) coated with Ni, so that it is sufficiently resistant to oxidation and the like.
以上、 本発明の好適な実施形態について詳細に説明したが、 本発明は上記実施 形態に限定されないことはいうまでもない。 例えば、 上記実施形態は静電チヤッ クに本発明を適用した例であるが、 セラミック固体内の導電要素に電気導入端子 を接続する場合、 例えばセラミックヒーターの電熱要素に電気導入端子を接続す る場合等にも本発明は適用可能である。  As described above, the preferred embodiments of the present invention have been described in detail, but it is needless to say that the present invention is not limited to the above embodiments. For example, the above-described embodiment is an example in which the present invention is applied to an electrostatic chuck. In the case where an electric introduction terminal is connected to a conductive element in a ceramic solid, for example, the electric introduction terminal is connected to an electric heating element of a ceramic heater. The present invention can be applied to such cases.
また、 用いる材料についても上記実施形のものに限定されず、 本発明の趣旨を 逸脱しない限り、 他の材料を用いることができる。 ' 産業上の利用可能性  Also, the materials used are not limited to those of the above embodiment, and other materials can be used without departing from the gist of the present invention. '' Industrial applicability
本発明によれば、 セラミック固体に埋設された電極に電気導入端子を接続した 構造において、 セラミック固体と電気導入端子との間に生ずる熱応力を低減する ことができ、 その結果として強度や電気的接続性の信頼性を向上することができ る。  According to the present invention, in a structure in which an electric lead-in terminal is connected to an electrode embedded in a ceramic solid, a thermal stress generated between the ceramic solid and the electric lead-in terminal can be reduced. The reliability of connectivity can be improved.
また、 外部に露出する電気導入端子の部分については化学的耐久性を有するも のとすることができるので、 周囲環境のガスに対する耐久性を向上させることが できる。  In addition, since the portion of the electric lead-in terminal exposed to the outside can have chemical durability, the durability against gas in the surrounding environment can be improved.
従って、 本発明は、 半導体製造装置のように熱変動の大きな環境で用いられる 静電チャックやヒーターに適用すると、 特に有効である。  Therefore, the present invention is particularly effective when applied to an electrostatic chuck or a heater used in an environment where heat fluctuation is large, such as a semiconductor manufacturing apparatus.

Claims

請求の範囲 The scope of the claims
1 . 内部に埋設された導電要素と、 前記導電要素に電気的に接続された 電気端子とを有するセラミック固体であって、  1. A ceramic solid having a conductive element embedded therein and an electric terminal electrically connected to the conductive element,
前記セラミック固体には前記導電要素を横切るよう穴が設けられており、 前記電気端子が、 前記セラミック固体の熱膨張係数に近い高融点金属から成り 且つ前記穴の内部空間と実質的に同形の嵌合部材と、 前記嵌合部材に連結手-段を 介して連結される化学的耐久性を有する端子部材とから構成され、  A hole is provided in the ceramic solid so as to traverse the conductive element. The electric terminal is made of a refractory metal having a coefficient of thermal expansion close to the coefficient of thermal expansion of the ceramic solid, and has substantially the same shape as the internal space of the hole. A mating member, and a chemically durable terminal member connected to the fitting member via a connecting means.
前記嵌合部材が前記セラミック固体の前記穴に嵌合され、 前記穴の内壁面に露 出している前記導電要素と前記嵌合部材とが電気的に接続されている、 セラミッ ク固体。  The ceramic solid, wherein the fitting member is fitted in the hole of the ceramic solid, and the conductive element exposed on an inner wall surface of the hole is electrically connected to the fitting member.
2 . 前記高融点金属は、 タングステン、 モリブデン及びタンタルより成 る群から選ばれた一つである請求項 1に記載のセラミック固体。  2. The ceramic solid according to claim 1, wherein the refractory metal is one selected from the group consisting of tungsten, molybdenum, and tantalum.
3 . 前記端子部材は、 ニッケルによりコーティングされたニッケル一鉄 合金から成る請求項 1又は 2に記載のセラミック固体。  3. The ceramic solid according to claim 1, wherein the terminal member is made of a nickel-iron alloy coated with nickel.
4 . 前記連結手段は、 前記嵌合部材又は前記端子部材の一方の一端に設 けられた雄ねじ部と、 前記嵌合部材又は前記端子部材の他方の一端に設けられた 雌ねじ部とから成り、 前記雄ねじ部と前記雌ねじ部との間に導電性の接合剤を介 在させた請求項 1に記載のセラミック固体。  4. The connecting means includes a male screw portion provided at one end of the fitting member or the terminal member, and a female screw portion provided at the other end of the fitting member or the terminal member, 2. The ceramic solid according to claim 1, wherein a conductive bonding agent is interposed between the male screw portion and the female screw portion.
5 . 前記穴の内壁面と前記嵌合部材との間に導電性の接合剤を介在させ ると共に、 前記嵌合部材の外面と前記端子部材の外面との間の境界部、 及び、 前 記境界部と前記セラミック固体の表面との間の境界部に導電性の接合剤を配した 請求項 1に記載のセラミック固体。  5. A conductive bonding agent is interposed between the inner wall surface of the hole and the fitting member, and a boundary between the outer surface of the fitting member and the outer surface of the terminal member; and The ceramic solid according to claim 1, wherein a conductive bonding agent is disposed at a boundary between the boundary and the surface of the ceramic solid.
6 . 前記導電性の接合剤は導電性口ゥ材料である請求項 4又は 5に記載 のセラミヅク固体。  6. The ceramic solid according to claim 4, wherein the conductive bonding agent is a conductive mouth material.
7 . 半導体製造装置における静電チャックを構成する請求項 1に記載の セラミヅク固体。  7. The ceramic solid according to claim 1, which constitutes an electrostatic chuck in a semiconductor manufacturing apparatus.
PCT/JP1999/006037 1998-10-30 1999-10-29 Connection structure of electric lead-in terminal WO2000026995A1 (en)

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WO2004030411A1 (en) * 2002-09-27 2004-04-08 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor production system
JP2007157661A (en) * 2005-12-08 2007-06-21 Shin Etsu Chem Co Ltd Ceramics heater and manufacturing method of the same
JP2007250403A (en) * 2006-03-17 2007-09-27 Shin Etsu Chem Co Ltd Ceramic heater and heater power supply component

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JPH0221586A (en) * 1988-07-08 1990-01-24 Hitachi Ltd Sliding current collector
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JPS6326981A (en) * 1986-07-19 1988-02-04 株式会社デンソー Junction of ceramic heating unit and metal electrode
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