WO2000007215A3 - A method of allowing a stable power transmission into a plasma processing chamber - Google Patents

A method of allowing a stable power transmission into a plasma processing chamber Download PDF

Info

Publication number
WO2000007215A3
WO2000007215A3 PCT/US1999/016888 US9916888W WO0007215A3 WO 2000007215 A3 WO2000007215 A3 WO 2000007215A3 US 9916888 W US9916888 W US 9916888W WO 0007215 A3 WO0007215 A3 WO 0007215A3
Authority
WO
WIPO (PCT)
Prior art keywords
dielectric member
power transmission
stable power
allowing
processing chamber
Prior art date
Application number
PCT/US1999/016888
Other languages
French (fr)
Other versions
WO2000007215A2 (en
Inventor
Jeng H Hwang
Steve S Y Mak
Kang-Lie Chiang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2000562929A priority Critical patent/JP2003523072A/en
Publication of WO2000007215A2 publication Critical patent/WO2000007215A2/en
Publication of WO2000007215A3 publication Critical patent/WO2000007215A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method of processing a metal layer on a substrate. The method comprises disposing the substrate in a chamber having a dielectric member and processing gas. An interior surface of the dielectric member is heated to a temperature above about 150 °C and the metal layer is processed when processing power is passed through the heated dielectric member. Heating of the interior surface of the dielectric member essentially prevents deposits from forming on the interior surface and allows a stable power transmission through the dielectric member.
PCT/US1999/016888 1998-07-29 1999-07-26 A method of allowing a stable power transmission into a plasma processing chamber WO2000007215A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000562929A JP2003523072A (en) 1998-07-29 1999-07-26 Method for enabling stable power transfer into a plasma processing chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12429198A 1998-07-29 1998-07-29
US09/124,291 1998-07-29

Publications (2)

Publication Number Publication Date
WO2000007215A2 WO2000007215A2 (en) 2000-02-10
WO2000007215A3 true WO2000007215A3 (en) 2002-10-17

Family

ID=22413975

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/016888 WO2000007215A2 (en) 1998-07-29 1999-07-26 A method of allowing a stable power transmission into a plasma processing chamber

Country Status (2)

Country Link
JP (1) JP2003523072A (en)
WO (1) WO2000007215A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421348A1 (en) * 1989-10-06 1991-04-10 Hitachi, Ltd. Film forming apparatus
EP0650182A1 (en) * 1993-10-15 1995-04-26 Applied Materials, Inc. Plasma etch reactors and methods of operating thereof
JPH07221070A (en) * 1994-01-28 1995-08-18 Sony Corp Dry etching method
EP0838841A2 (en) * 1996-10-18 1998-04-29 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421348A1 (en) * 1989-10-06 1991-04-10 Hitachi, Ltd. Film forming apparatus
EP0650182A1 (en) * 1993-10-15 1995-04-26 Applied Materials, Inc. Plasma etch reactors and methods of operating thereof
JPH07221070A (en) * 1994-01-28 1995-08-18 Sony Corp Dry etching method
EP0838841A2 (en) * 1996-10-18 1998-04-29 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HEE SEUP LEE ET AL: "Patterning of Pt thin films using SiO/sub 2/ mask in a high density plasma", JOURNAL OF THE KOREAN INSTITUTE OF TELEMATICS & ELECTRONICS, vol. 34D, no. 3, March 1997 (1997-03-01), pages 87 - 92 92, XP002101109, ISSN: 1016-135X *
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 11 26 December 1995 (1995-12-26) *

Also Published As

Publication number Publication date
WO2000007215A2 (en) 2000-02-10
JP2003523072A (en) 2003-07-29

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