WO1999066973A3 - Temperature compensation arrangement and current reference circuit - Google Patents
Temperature compensation arrangement and current reference circuit Download PDFInfo
- Publication number
- WO1999066973A3 WO1999066973A3 PCT/EP1999/004273 EP9904273W WO9966973A3 WO 1999066973 A3 WO1999066973 A3 WO 1999066973A3 EP 9904273 W EP9904273 W EP 9904273W WO 9966973 A3 WO9966973 A3 WO 9966973A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- current
- reference circuit
- voltage
- temperature compensation
- current reference
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69916891T DE69916891T2 (en) | 1998-06-24 | 1999-06-18 | ARRANGEMENT FOR TEMPERATURE COMPENSATION AND CONSTANT CURRENT SWITCHING |
EP99931114A EP1144034B1 (en) | 1998-06-24 | 1999-06-18 | Temperature compensation arrangement and current reference circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9813586A GB2338803B (en) | 1998-06-24 | 1998-06-24 | Temperature compensation arrangement and current reference circuit |
GB9813586.6 | 1998-06-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999066973A2 WO1999066973A2 (en) | 1999-12-29 |
WO1999066973A3 true WO1999066973A3 (en) | 2002-05-30 |
Family
ID=10834273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1999/004273 WO1999066973A2 (en) | 1998-06-24 | 1999-06-18 | Temperature compensation arrangement and current reference circuit |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1144034B1 (en) |
DE (1) | DE69916891T2 (en) |
GB (1) | GB2338803B (en) |
WO (1) | WO1999066973A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101950191B (en) * | 2010-09-16 | 2012-05-09 | 电子科技大学 | Voltage reference source with high-order temperature compensation circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391979A (en) * | 1992-10-16 | 1995-02-21 | Mitsubishi Denki Kabushiki Kaisha | Constant current generating circuit for semiconductor devices |
JPH08228114A (en) * | 1995-02-21 | 1996-09-03 | Nec Corp | Constant current source circuit |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4792748A (en) * | 1987-11-17 | 1988-12-20 | Burr-Brown Corporation | Two-terminal temperature-compensated current source circuit |
-
1998
- 1998-06-24 GB GB9813586A patent/GB2338803B/en not_active Expired - Fee Related
-
1999
- 1999-06-18 DE DE69916891T patent/DE69916891T2/en not_active Expired - Fee Related
- 1999-06-18 WO PCT/EP1999/004273 patent/WO1999066973A2/en active IP Right Grant
- 1999-06-18 EP EP99931114A patent/EP1144034B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391979A (en) * | 1992-10-16 | 1995-02-21 | Mitsubishi Denki Kabushiki Kaisha | Constant current generating circuit for semiconductor devices |
JPH08228114A (en) * | 1995-02-21 | 1996-09-03 | Nec Corp | Constant current source circuit |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 199, no. 701 31 January 1997 (1997-01-31) * |
Also Published As
Publication number | Publication date |
---|---|
EP1144034A3 (en) | 2002-08-07 |
EP1144034B1 (en) | 2004-04-28 |
GB2338803A (en) | 1999-12-29 |
DE69916891T2 (en) | 2004-10-21 |
WO1999066973A2 (en) | 1999-12-29 |
GB2338803B (en) | 2002-10-09 |
GB9813586D0 (en) | 1998-08-19 |
DE69916891D1 (en) | 2004-06-03 |
EP1144034A2 (en) | 2001-10-17 |
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