WO1999059190A3 - Outil servant a fabriquer un ou plusieurs niveaux de metallisation sur un composant a semiconducteur et procede correspondant - Google Patents
Outil servant a fabriquer un ou plusieurs niveaux de metallisation sur un composant a semiconducteur et procede correspondant Download PDFInfo
- Publication number
- WO1999059190A3 WO1999059190A3 PCT/US1999/010331 US9910331W WO9959190A3 WO 1999059190 A3 WO1999059190 A3 WO 1999059190A3 US 9910331 W US9910331 W US 9910331W WO 9959190 A3 WO9959190 A3 WO 9959190A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- workpiece
- manufacture
- manufacturing tool
- metallization levels
- tool architecture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000001465 metallisation Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
- H01L21/76852—Barrier, adhesion or liner layers the layer covering a conductive structure the layer also covering the sidewalls of the conductive structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Wire Bonding (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99922934A EP1086485A2 (fr) | 1998-05-12 | 1999-05-12 | Outil servant a fabriquer un ou plusieurs niveaux de metallisation sur un composant a semiconducteur et procede correspondant |
JP2000548908A JP2002515645A (ja) | 1998-05-12 | 1999-05-12 | 被加工片に1つ以上の金属化レベルを形成するのに使用するための方法及び製造ツール構造体 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/076,565 | 1998-05-12 | ||
US09/076,565 US6376374B1 (en) | 1998-05-12 | 1998-05-12 | Process and manufacturing tool architecture for use in the manufacturing of one or more protected metallization structures on a workpiece |
US09/076,695 | 1998-05-12 | ||
US09/076,695 US6143126A (en) | 1998-05-12 | 1998-05-12 | Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on an integrated circuit |
US09/128,238 | 1998-08-03 | ||
US09/128,238 US6120641A (en) | 1998-05-12 | 1998-08-03 | Process architecture and manufacturing tool sets employing hard mask patterning for use in the manufacture of one or more metallization levels on a workpiece |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999059190A2 WO1999059190A2 (fr) | 1999-11-18 |
WO1999059190A3 true WO1999059190A3 (fr) | 2000-04-06 |
Family
ID=27372911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/010331 WO1999059190A2 (fr) | 1998-05-12 | 1999-05-12 | Outil servant a fabriquer un ou plusieurs niveaux de metallisation sur un composant a semiconducteur et procede correspondant |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1086485A2 (fr) |
JP (1) | JP2002515645A (fr) |
TW (1) | TW494443B (fr) |
WO (1) | WO1999059190A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570330B2 (en) | 2002-07-22 | 2017-02-14 | Brooks Automation, Inc. | Substrate processing apparatus |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI304391B (en) | 2002-07-22 | 2008-12-21 | Brooks Automation Inc | Substrate processing apparatus |
US7988398B2 (en) | 2002-07-22 | 2011-08-02 | Brooks Automation, Inc. | Linear substrate transport apparatus |
US8960099B2 (en) | 2002-07-22 | 2015-02-24 | Brooks Automation, Inc | Substrate processing apparatus |
JP2011154380A (ja) * | 2003-03-20 | 2011-08-11 | Toshiba Mobile Display Co Ltd | 表示装置の形成方法 |
US7215006B2 (en) * | 2005-10-07 | 2007-05-08 | International Business Machines Corporation | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement |
US20070117377A1 (en) * | 2005-11-23 | 2007-05-24 | Chih-Chao Yang | Conductor-dielectric structure and method for fabricating |
US8496790B2 (en) * | 2011-05-18 | 2013-07-30 | Applied Materials, Inc. | Electrochemical processor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178682A (en) * | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
US5256565A (en) * | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
US5302209A (en) * | 1991-02-15 | 1994-04-12 | Semiconductor Process Laboratory Co., Ltd. | Apparatus for manufacturing semiconductor device |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US5563095A (en) * | 1994-12-01 | 1996-10-08 | Frey; Jeffrey | Method for manufacturing semiconductor devices |
US5933758A (en) * | 1997-05-12 | 1999-08-03 | Motorola, Inc. | Method for preventing electroplating of copper on an exposed surface at the edge exclusion of a semiconductor wafer |
US5994678A (en) * | 1997-02-12 | 1999-11-30 | Applied Materials, Inc. | Apparatus for ceramic pedestal and metal shaft assembly |
-
1999
- 1999-05-12 TW TW088107682A patent/TW494443B/zh not_active IP Right Cessation
- 1999-05-12 WO PCT/US1999/010331 patent/WO1999059190A2/fr active Search and Examination
- 1999-05-12 JP JP2000548908A patent/JP2002515645A/ja active Pending
- 1999-05-12 EP EP99922934A patent/EP1086485A2/fr not_active Withdrawn
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5178682A (en) * | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
US5316974A (en) * | 1988-12-19 | 1994-05-31 | Texas Instruments Incorporated | Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer |
US5256565A (en) * | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
US5302209A (en) * | 1991-02-15 | 1994-04-12 | Semiconductor Process Laboratory Co., Ltd. | Apparatus for manufacturing semiconductor device |
US5563095A (en) * | 1994-12-01 | 1996-10-08 | Frey; Jeffrey | Method for manufacturing semiconductor devices |
US5994678A (en) * | 1997-02-12 | 1999-11-30 | Applied Materials, Inc. | Apparatus for ceramic pedestal and metal shaft assembly |
US5933758A (en) * | 1997-05-12 | 1999-08-03 | Motorola, Inc. | Method for preventing electroplating of copper on an exposed surface at the edge exclusion of a semiconductor wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9570330B2 (en) | 2002-07-22 | 2017-02-14 | Brooks Automation, Inc. | Substrate processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2002515645A (ja) | 2002-05-28 |
WO1999059190A2 (fr) | 1999-11-18 |
TW494443B (en) | 2002-07-11 |
EP1086485A2 (fr) | 2001-03-28 |
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