WO1999053534A1

WO1999053534A1 - Process system

Info

Publication number: WO1999053534A1
Application number: PCT/JP1999/001908
Authority: WO
Inventors: Kaisha Ultraclean Technology Research Institute Kabushiki
Original assignee: Ohmi, Tadahiro; Nitta, Takahisa; Hirayama, Masaki; Morii, Akio
Priority date: 1998-04-09
Filing date: 1999-04-09
Publication date: 1999-10-21
Also published as: JP2001102423A; JP4270413B2

Abstract

A process system requiring a smaller floor space and capable of providing a smooth flow of gas and a desirable plasma, which efficiently produces and maintains a plasma while reducing losses of high-frequency power supplied for plasma processing. The system comprises a process chamber (403) connected to an upper part of a transfer chamber (402) through a gate (416) (Figure 4), a stage (406) isolated from the outside and provided with a plate (412) for supporting an object (415) of processing, means (410) for moving the plate (412) of the stage (406) through the gate (416) between the transfer chamber (402) and the process chamber (403) while isolating the transfer chamber (402) from the outside, and means (413, 414) for isolating the transfer chamber (402) from the process chamber (403) when the plate (412) is in process chamber (403).

Description

Description Process equipment Technical field

The present invention relates to a process device such as a semiconductor. More specifically, the present invention relates to a process apparatus which realizes a completely axisymmetric process on a large substrate and has a small loss of high frequency when applied to a high frequency plasma process. Background art

Conventionally, the following technology is known as a semiconductor process device.

(1) As shown in Fig. 9 and Fig. 10, which is a cross-sectional view taken along the line 10--10 in Fig. 9, each side (side) of the polygonal transfer chamber 101 has a process chamber 102a, 1b. This is a process device having a structure in which 02 b and 102 c are connected via gate valves 104 a, 104 b and 104 c, respectively.

In this process apparatus, as shown in FIG. 10, an arm 105 for transferring an object to be processed 107 such as a wafer is provided in the transfer chamber 101. The arm 105 is rotatable and has an extendable structure. The transfer is performed by opening and closing the gate valves 104a and 104b when the object 107 is delivered.

Conventionally, the following technology is known as another process device.

(2) As shown in Fig. 11, the process chamber 201 is vertically divided by a plate 206 with a plurality of holes called a baffle plate, and the process chamber is formed by being partitioned by a baffle plate 206. This is a process device having a structure in which a vacuum pump 207 is provided on a side surface of a lower space 202 of 201.

Here, the baffle plate 206 is introduced from a gas introduction pipe 208 provided in communication with the process chamber 201, and aims to uniformly exhaust the process gas from around the workpiece 209. It is provided as.

That is, if the baffle plate 206 is not provided, the process gas This is because the flow is biased toward the side where the pump 207 is provided, and uniform processing cannot be performed on the object to be processed 209. In particular, when the diameter of the object to be processed is 20 Omm or more, the unevenness of the process due to the uneven flow of the gas appears remarkably.

In FIG. 11, reference numeral 203 denotes a transfer chamber connected to a side surface of the process chamber 201 via a gate valve 204.

(3) As shown in FIG. 12, a plurality of exhaust holes 306 are formed in the bottom of the container forming the process chamber 301 so as to communicate with the outside, and a flexible exhaust pipe 302 is connected to the exhaust holes 306. Further, a vacuum pump 307 is connected to the exhaust pipe 302.

In FIG. 11, reference numeral 203 denotes a transfer chamber connected to a side surface of the process chamber 201 via a gate valve 204. Reference numeral 305 denotes a stage for holding the object, and reference numeral 308 denotes a process gas introduction pipe.

However, the above prior art has the following problems.

In the technique (1), since a large hole through which the object to be processed must be formed on the side surface of the process chamber 101 to which the gate valve 104b is connected, the shape of the process chamber 101 is changed from the axial symmetry. Deviate.

If the shape of the process chamber 101 deviates from the axial symmetry, the flow of the process gas is disturbed. In the case of the plasma process, the shape of the plasma is disturbed. As a result, non-uniform processing of the object to be processed is brought about. In particular, this problem becomes remarkable when the wafer size exceeds S200 mm.

On the other hand, in order to suppress the influence of the flow of the process gas ゃ the turbulence of the plasma shape, it is sufficient to enlarge the process chamber 101 and keep the wall forming the process chamber 101 away from the object to be processed. Increasing the size of the process chamber 101 increases the area occupied by the process chamber.

In the technique (1), the process chamber 101 and the gate valves 104a, 104b, 104c, and 04d are in contact with each other via an insulating ring (not shown). Therefore, in the high-frequency excitation plasma, the high-frequency current flowing through the wall forming the process chamber 101 is widely cut off by the gate valves 104a, 104b, 104c, and 104d. Flow from gate valve 104a, 104b, 104c, 104d The high-frequency current that is lost is greatly lost by the bellows of the gate valves 104a, 104b, 104c, and 104d, so that the loss of high-frequency power increases as a whole. In addition, the asymmetrical flow of the high-frequency current resulted in an asymmetrical plasma potential on the wall, which tended to make the plasma shape non-uniform.

In the technique (2), the conductance of the exhaust line was reduced due to the presence of the baffle plate 206, and a large flow rate of gas could not be flowed efficiently.

In the technique (3), the plurality of exhaust pipes 302 extend below the process chamber 301, and the space below the process chamber 301 is occupied by the exhaust pipe 302. Therefore, for example, a space for performing maintenance such as a stage 305 on which the object to be processed 309 is mounted has become narrow.

SUMMARY OF THE INVENTION An object of the present invention is to provide a process apparatus capable of making a gas flow and a plasma shape uniform and occupying a small area of the apparatus.

An object of the present invention is to provide a process apparatus capable of efficiently generating and maintaining plasma by reducing loss of high frequency power supplied in a high frequency plasma process.

An object of the present invention is to provide a process apparatus capable of uniformly exhausting a large amount of process gas from around an evaporator without significantly reducing the conductance of an exhaust line.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a process apparatus capable of making an exhaust line compact and providing a large space for maintenance below a process chamber. Disclosure of the invention

The process apparatus of the present invention includes: a transfer chamber for transferring an object to be processed;

A process chamber provided above the transfer chamber via a gate,

A stage which is sealed from the outside and has a mounting portion for mounting the object to be processed, and a sealing portion between the transfer chamber and the process chamber through the gate while moving the mounting portion of the stage between the transfer chamber and the outside while sealing the transfer chamber and the outside. Means for moving in and out;

To seal the transfer chamber and the process chamber when the receiver is in the process chamber W

Four

Means,

It is characterized by having.

In the present invention, the transfer chamber is provided below the process chamber. Therefore, the gate between the process room and the transfer room exists below the process room, not on the side of the process room.

Therefore, the shape of the process chamber can be formed to be axially symmetric, and the generation of turbulence in the gas flow can be prevented without increasing the size of the process chamber. In addition, in the case of the plasma process, disturbance of the plasma shape can be prevented. As a result, even when the object to be processed has a large diameter exceeding 20 O mm, the processing can be performed uniformly.

Since the gate valve does not exist on the side of the process chamber, the high-frequency current flowing through the wall forming the process chamber 101 in the high-frequency excited plasma generated by the conventional technology is generated by the gate valves 104 a and 1. There is no widespread interruption in section 04b, and high-frequency power loss can be reduced.

In the present invention, since the gate valve is located below the process chamber, it cannot completely eliminate the occurrence of high-frequency power loss, but the flow of high-frequency current is symmetric, and therefore the plasma potential is also reduced. Since it is symmetrical, uniform plasma can be obtained in the process chamber, and uniform processing can be performed even on a large-diameter workpiece exceeding 200 mm.

In the present invention, as means for moving the mounting portion of the stage so as to move in and out of the space between the transfer chamber and the process chamber via the gate while sealing the transfer chamber and the outside, It is preferable to use a bellows provided between the room side wall and the stage.

In addition, when the mounting section is in the process chamber, that is, when the stage is raised, the object to be processed is carried into the process chamber, and the process processing such as film formation is performed, the transfer chamber and the process chamber are not connected. The seal can be done, for example, as follows.

That is, a flange having a diameter larger than the diameter of the gate may be provided on the side surface of the stage, a groove may be formed on the upper surface of the flange, and an O-ring may be placed in the groove. When the stage is raised, this ring contacts the lower surface of the process chamber. The seal between the process chamber and the transfer chamber is secured with a simple structure that can be touched.

The process apparatus of the present invention comprises: a process chamber;

A plurality of exhaust holes formed in the bottom surface of the process chamber so as to be substantially axially symmetric with respect to the center of the object;

A plurality of exhaust passages communicating with the respective exhaust holes,

A lateral hole communicating the plurality of exhaust passages;

Below the process chamber,

A vacuum pump is connected to at least one of the side holes.

In the present invention, instead of providing a baffle plate, a plurality of exhaust holes and an exhaust passage communicating with the exhaust holes are formed in a block below the process chamber so as to be substantially axially symmetric with respect to the center of the object to be processed. The number of exhaust holes may be odd or even. In addition, four or more are preferable from the viewpoint of more uniform exhaust. It is preferable that the size of the hole be such that the conductance is at least about five times the conductance of the process chamber.

By forming such an exhaust hole and an exhaust passage so as to be axially symmetric around the object to be processed, uniform exhaust can be achieved. Also, since no buffer plate is used, a large flow rate of gas can be flowed efficiently without the problem of a decrease in the conductance of the exhaust line.

In addition, since a tube tube is also used, maintenance can be easily performed. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a plan view of the process apparatus according to the first embodiment.

FIG. 2 is a sectional view taken along line 2-2 of FIG.

FIG. 3 is an operation process diagram of the process device according to the first embodiment.

FIG. 4 is an operation process diagram of the process device according to the first embodiment.

FIG. 5 is an operation process diagram of the process device according to the first embodiment.

FIG. 6 is an operation process diagram of the process device according to the first embodiment.

FIG. 7 is a plan view of the process device according to the first embodiment. FIG. 8 is a sectional view taken along line 8-8 in FIG.

FIG. 9 is a plan view of a process device according to a conventional example.

FIG. 10 is a cross-sectional view taken along the line 10—10 of FIG.

FIG. 11 is a side sectional view of a process apparatus according to another conventional example.

FIG. 12 is a side sectional view of a process apparatus according to another conventional example.

FIG. 13 is a cross-sectional view of a process device according to the third embodiment.

FIG. 14 is a process diagram illustrating an operation procedure of the process device according to the third embodiment.

(Explanation of code)

1 wafer, 2 lids, 2a flange, 3 storage box,

3 a flange, 4 mounting part (magnet), 5 elastic support (panel),

6 bellows, 7 exhaust port, 9 wafer carrier,

10 a Process chamber upper wall, 10 b Process chamber lower wall,

1 0 c Process chamber side wall, 1 1 Introductory body, 1 1 a External flange, l i b Internal flange, 1 2 space, 1 0 1 transfer chamber,

102 a, 102 b, 102 c process chamber,

1 04 a, 104 b, 104 c Gate valve,

1 05 Arm, 1 07 Workpiece, 206 Knuffle plate,

201 Process chamber, 203 transfer chamber, 207 vacuum pump,

208 gas inlet pipe, 209 workpiece, 204 gate valve,

30 1 process room, 302 exhaust pipe, 305 stage,

306 exhaust hole, 307 vacuum pump, 308 process gas introduction pipe, 401 loader-unloader room, 402 transfer room,

403 process chamber, 404 cassette, 405 transfer robot,

4 06 stage, 407 side hole, 408 exhaust hole,

4 09 Vacuum pump port,

4 1 0 Means for moving 'elevating mechanism (bellows),

4 1 2 Mounting section, 4 1 3 flange, 4 1 4 0 ring,

4 1 5 Workpiece (wafer), 4 16 gate, 4 17 〇 ring, 4 18 cassette mounting table, 4 19 radial line slot antenna, 4 15 wafer, 4 2 1 exhaust passage. BEST MODE FOR CARRYING OUT THE INVENTION

(Example 1)

1 and 2 show a process apparatus according to the present embodiment.

The process apparatus of this example includes a transfer chamber 402 for transferring the object 4 15, and a process chamber 4 provided above the transfer chamber 402 via a gate 4 16 (FIG. 4). 0 3 and

A stage 4 06, which is sealed from the outside and has a mounting portion 4 12 for mounting the object 4 15,

While the transfer chamber 402 is sealed off from the outside, the mounting section 412 of the stage 406 enters and exits between the transfer chamber 402 and the process chamber 403 via the gate 416. Means 4 1 0 to move

Means (413, 414) for sealing the transfer chamber 402 and the process chamber 403 when the receiver 4122 is in the process chamber 403;

Having.

Hereinafter, examples of the present invention will be described in more detail.

The 200 mm wafer plasma process cluster tool shown in Fig. 2 has one transport chamber 402 and one loader / unloader chamber 401 mounted above it and three radial chambers. It consists of a microwave-excited plasma process chamber 403 using a line slot antenna.

The transfer chamber 402 is made of aluminum, and has a wafer transfer robot (Mex ックス 'λ'-250H) 400 in the center. The transfer chamber 402 is evacuated with a turbo molecular pump (Seiko Seiki STP-300) (not shown). Loader Z unloader room 401 is made of aluminum, and contains a cassette in which up to six sheets can be set. The inside of the loader-Z unloader room 401 is evacuated by a turbo molecular pump (STP-300, manufactured by Seiko Seiki Co., Ltd.) (not shown). There is also a leak port for taking out the cassette. The cassette mounting table 418 has an elevating mechanism 410. When a slot number is specified, the cassette mounting table 418 automatically adjusts to the height of the arm of the slot force transfer robot 405. The lifting mechanism 410 is composed of a bellows 410 with one end attached to the bottom of the cassette Aichi University 418 and the other end attached to the bottom of the transfer chamber 402. ing.

A vacuum seal between the loader / unloader chamber 401 and the transfer chamber 402 is made by an O-ring 417 mounted on the upper surface of the cassette mounting table 418. The process chamber 403 is made of aluminum, and is provided with a radial line slot antenna 419 for uniformly introducing a microwave of 2.45 GHz into the chamber.

The surface of the wafer stage 406 is coated with alumina, and peripheral mechanisms such as a heater, a temperature sensor, a lift pin, an electrostatic chuck, and a high-frequency bias applying mechanism are attached. These peripheral mechanisms will be maintained as needed.

A flange 4 13 having a diameter larger than the diameter of the gate 4 16 is provided on a side surface of the object mounting portion 4 12 of the wafer stage 4 06. Has a 0 ring 4 1 4.

In this example, one end of the bellows 410 is fixedly welded to the bottom of the flange 413. The other end of the bellows 410 is fixed to the bottom of the transfer chamber 402 by welding. Therefore, the transfer chamber 402 is sealed from the atmosphere by the bellows. Further, the wafer stage 406 is moved up and down by the reduction of the bellows 410.

When the bellows 410 is extended, the wafer stage 406 moves upward, and the upper surface of the flange 413 (and the O-ring 414) comes into contact with the outer bottom surface of the process chamber 403. Thereby, the seal between the transfer chamber 402 and the process chamber 403 is performed. When the bellows 410 is contracted, the wafer stage 406 is lowered. The wafer stage 406 descends so that its upper surface is at the height of the transfer arm.

The process chamber 403 is generally formed by engraving the inside of the block, but also in this example, it is formed by engraving. In this example, after further engraving the process chamber 403, a plurality of exhaust holes 408 are formed in the bottom of the process chamber 403. And exhaust passages 421 communicating with the exhaust holes 408, respectively. In this example, four exhaust holes 408 were formed around the wafer stage 406. In order to uniformly exhaust the process gas, the four exhaust holes 408 are formed at symmetric positions about the center of the object to be processed 4 15.

Further, a lateral hole 407 is formed to allow the exhaust passages 421 to communicate with each other. The lateral hole 407 communicates with a vacuum pump 409 formed on the bottom of the corner of the transfer chamber 402 and opening to the outside. The vacuum pump port 409 is connected to a turbo molecular pump (STP-600H, manufactured by Seiko Seiki Co., Ltd.) (not shown).

The operation procedure of the cluster tool is described below.

The chamber 401 leaks to the atmospheric pressure, and the cassette 400 containing a silicon wafer with a diameter of 200 mm is placed in the loader Z unloader chamber 401 and the vacuum is applied. To pull.

Next, as shown in FIG. 3, the cassette 4104 is lowered by contracting the bellows 410.

Next, as shown in FIG. 4, the bellows 410 is contracted to lower the process stage 400 of the process chamber 403, and the process robot 405 is moved to the process stage 406 by using the transfer robot 405. Transfer 15 from cassette 4 04 onto the lift pin of wafer stage 4 06.

Next, as shown in FIG. 5, the cassette 404 is raised, the lift pins of the wafer stage 406 are stored, and the wafer 415 is moved to the wafer stage 406. Place on top.

Next, as shown in FIG. 6, e-stage 406 is lifted, and placed in process chamber 403. The space between the process chamber 403 and the transfer chamber 402 is sealed by a 0-ring 414 placed on a flange 413 formed on the side surface of the wafer stage 406.

Subsequently, the wafer 415 is processed in the process chamber 403, and the wafer 415 is returned to the cassette 404 in a reverse process to the above.

Loader 1 Z unloader 1 and the process chamber are installed beside the transfer chamber, providing a vacuum seal between the rotor / unloader and the transfer chamber, and between the transfer chamber and the process chamber. Compared to the conventional cluster tool shown in FIG. 9 using a gate valve, the cluster occupation tool having the structure of the present invention was able to reduce the device occupation area to about one third.

Using the process apparatus shown in Fig. 1, high frequency was applied to the wafer stage to generate plasma. A quartz plate was placed on the upper part of the process chamber 403 instead of the radial line slot antenna so that the emission intensity of the plasma could be measured from the upper part.

The high frequency applied to the wafer stage 406 was 13.56 MHz in frequency and 2000 W in power. Argon gas was supplied to the process chamber 403 via the gas supply pipe 4 1 1 100 sccm, and the pressure in the process chamber 403 was set to 2 OmTorr.

Under the same process conditions, plasma was generated under the same conditions in the process chamber of the conventional cluster tool shown in Fig. 9.

Despite the same high-frequency power being applied, the emission intensity of the plasma generated by the device of the present invention is about 10% stronger than that of the conventional device, and the high-frequency power efficiently supplies the plasma. Was confirmed.

In addition, the plasma density distribution was biased to the side of the hole connected to the gate valve on the inner wall of the chamber in the conventional equipment, but it was visually confirmed that the process equipment of this example was able to generate axially symmetric plasma. Was done.

Using the same turbo-molecular pump (STP-600H manufactured by Seiko Seiki Co., Ltd., exhaust speed 600 L / sec), argon gas was used for the process device of this example and the conventional process device having the baffle plate 206 shown in Fig. 11. Was evacuated. The pressure in the chamber at a flow rate of 5000 sccm at the chamber was 0.5 Torr in the conventional apparatus, whereas it was 0.2 Torr in the apparatus of the present invention, which could be drawn to a higher vacuum. .

Therefore, it was confirmed that the conductance of the exhaust line was small in the apparatus of the present invention, and that the process apparatus of the present example was able to flow a larger amount of gas on the same stage at the same process pressure.

Further, in the process apparatus of this example, as shown in FIG. Compared to connecting the exhaust pipe 302 to each exhaust hole 306 and connecting to the vacuum pump 307, the space under the process chamber 403 is wider and easier to maintain.

(Example 2)

The process apparatus according to the second embodiment will be described with reference to FIGS. 7 and 8.

The process apparatus of this example includes a process chamber 201,

A plurality of exhaust holes 408 formed on the bottom surface of the process chamber 201 so as to be substantially axially symmetric with respect to the center of the processing object 209;

A plurality of exhaust passages 4 2 1 communicating with the respective exhaust holes 4 08;

A plurality of exhaust passages 4 2 1 and lateral holes 4 0 7 communicating with each other;

Below the process chamber 201,

A vacuum pump 207 is connected to at least one of the side holes 407.

As in the first embodiment, the process device of this example was compared with a conventional process device.

The same turbo molecular pump (Seiko Seiki STP—600 H, exhaust speed 600 L / sec) was used for the process device of this example and the conventional process device having the baffle plate 206 shown in FIG. The argon gas was exhausted using. When the flow rate is 500 sccm, the pressure in the chamber is 0.5 Torr in the conventional apparatus, whereas it is 0.3 Torr in the apparatus of the present invention. Came.

Therefore, it was confirmed that the conductance of the exhaust line was small in the apparatus of the present invention, and that at the same outlet pressure, the outlet apparatus of this example could flow a larger amount of gas at the same outlet pressure.

Further, the process apparatus of this example has a case where the exhaust of the process chamber 403 is connected to the vacuum pump 307 by connecting the exhaust pipe 302 to the exhaust holes 306 as shown in FIG. In comparison, the space beneath the process chamber 403 is wider and easier to maintain.

(Example 3)

Fig. 13 shows the process equipment of this example. In this example, there is an introduction structure that has an opening in the upper wall 10a of the process chamber, moves the process chamber up and down while being isolated from the inside of the process chamber, and seals the opening at the upper position. The main body 11 is provided with a force, and a mounting portion 4 is provided on an upper portion of the introduction main body 11 via an elastic support 5. The mounting portion 4 is configured to be capable of adsorbing and detaching the carrier 9 to be processed. I have.

This will be described in more detail below.

The wafer carrier 9 for transporting the wafer 1 to be processed is composed of a storage box 3 for storing the wafer 1, a lid 2 for sealing the inside of the storage box 3, and a force. In this example, the bottom of the storage box 3 is formed with a flange 3a, and the width of the bottom of the storage box 3 including the flange 3a is substantially the same as the diameter of the opening provided in the process chamber. . The lid 2 is also formed with a flange 3a.The diameter of the lid 2 including the flange 2a is formed slightly larger than the diameter of the bottom of the storage box 3, and the bottom of the flange 2a is formed of the flange 3a. The inside of the wafer carrier is sealed by contacting the upper surface of the wafer carrier. The inside of the wafer carrier is evacuated through an exhaust port (not shown) and is maintained in a reduced pressure state.

The introduction body 11 has an outer flange 11a at the top. The outer flange 11a has a larger diameter than the opening formed in the upper wall of the process chamber. A bellows 6 is fixed between the bottom surface of the outer flange 11a and the lower wall 10b of the process chamber. Therefore, the introduction body 6 moves up and down as the bellows expands and contracts. The introduction body 11 itself is outside the process room and is isolated from the process room. When the introduction main body 11 is positioned above, the outer flange 11 a abuts the upper wall 10 a of the process chamber, and the opening is sealed.

A mounting section 4 is provided above the introduction main body 11 via an elastic support (panel). The storage box 3 of the wafer carrier 9 is mounted on the mounting section 4. In the example shown in Fig. 13, an internal flange 1 lb is provided on the introduction main body 11 and a spring 5 is provided on the upper surface of the internal flange 1 lb. A communication port 13 is formed in the inner flange 11, and the space below the receiver 4 and the space 12 in the introduction body 11 communicate with each other through the communication port 13. . An exhaust port 7 is formed in the introduction main body 12, and a space 12 inside the introduction main body 11 can be evacuated through the exhaust port 7. In this example, the mounting portion 4 is formed of an electromagnetic magnet, and the bottom surface of the storage box 3 can be attracted and adhered by turning on and off the electromagnetic magnet.

Next, the procedure for introducing a wafer will be described with reference to FIG.

FIG. 14① shows a state before the wafer carrier 9 is placed. The introduction main body 11 is located above, the outer flange 11 a abuts on the upper wall of the process chamber, and the opening is sealed.

FIG. 14② shows a state in which the wafer carrier 9 is mounted on the mounting portion 4 and the storage box of the wafer carrier 9 is attracted to the upper surface of the mounting portion with the electromagnetic switch turned on. Since the inside of the wafer carrier 9 is in a decompressed state, the storage box will not be detached from the lid only by adsorbing the bottom surface of the storage box to the mounting portion 4.

Fig. 14 (3) shows a state in which the inside of the introduction body 11 is exhausted through the exhaust port 7. When the space 1 2 inside the introduction main body 1 1 is decompressed, the storage box 3 and the lid 2 are separated from each other, and the lid 2 is a force that is held by the upper wall 10 a of the process chamber at the flange 2 a. Descends due to its own weight

I do.

FIG. 14④ shows a state in which the bellows is in a contracted state, and the storage box 2 is lowered to reach the height of the arm 30. In this state, the wafer is delivered to the arm. The flange 2a of the lid 2 is in contact with the upper wall 10a of the process chamber, so that the process chamber is sealed from the outside.

Figure 14⑤ shows a state where the wafer processing is completed and the storage box is returned. When the wafer processing is completed, the space 12 inside the introduction body 11 is returned to the atmospheric pressure, and the bellows 6 is extended. The upper surface of the flange of the storage box (3) contacts the lower surface of the flange of the lid (2), and the upper surface of the outer flange (11a) contacts the lower surface of the upper wall of the process chamber, thereby sealing the process chamber from the outside. Is stopped.

Next, the electromagnetic switch is set to ο ff, the wafer carrier 9 is detached from the receiver 4, and is “transported” to another location.

By introducing the wafer into the process chamber using the above procedure, the wafer can be formed on a wafer without confinement without being exposed to the atmosphere. The Rukoto. Industrial applicability

According to the present invention, the following various effects can be achieved.

(1) It is possible to provide a process device that can make the gas flow and the plasma shape uniform and that occupies a small area.

(2) It is possible to provide a process device capable of efficiently generating and maintaining plasma by reducing loss of high-frequency power supplied in the high-frequency plasma process.

(3) It is possible to provide a process device capable of uniformly exhausting a large amount of process gas from around the wafer without significantly reducing the conductance of the exhaust line.

(4) It is possible to provide a process apparatus capable of making the exhaust line compact and providing a wide maintenance space below the process chamber. Also, the occupied area is small, so it is possible to install multiple devices in a clean room. In the production line, instead of constructing a large semiconductor production line capable of processing a large number of wafers, a parallel production system with several 300 to 5,000 relatively small lines per month in parallel A distributed semiconductor production line is preferred. This makes it very easy to upgrade the production line with an improved process.

Claims

The scope of the claims

1. A transfer chamber for transferring the object to be processed,

A process chamber provided above the transfer chamber via a gate,

Means for sealing the transfer chamber and the process chamber when the receiver is in the process chamber;

A process apparatus comprising:

2. The means for moving the mounting portion of the stage so as to move in and out of the space between the transfer chamber and the process chamber via the gate while sealing the transfer chamber and the outside is provided by the transfer chamber side wall and the stage. 2. The semiconductor process device according to claim 1, wherein the semiconductor process device is a bellows provided between the two.

3. The means for sealing the transfer chamber and the process chamber when the mounting section is in the process chamber includes a flange provided on the side of the stage and having a larger diameter than the gate, and an upper surface of the flange. 3. The access device according to claim 1, wherein the access device is constituted by an o-ring provided on the device.

4. The process apparatus according to any one of claims 1 to 3, wherein the diameter of the object to be processed is 200 mm or more.

5. A plurality of exhaust holes formed in the bottom of the process chamber so as to be substantially axially symmetric with respect to the center of the workpiece,

A lateral hole communicating the plurality of exhaust passages;

Below the process chamber,

5. The process apparatus according to claim 1, wherein a vacuum pump is connected to at least one of the side holes.

6. Process room and

A plurality of exhaust holes formed in the bottom surface of the process chamber so as to be substantially axially symmetric with respect to the center of the object; A plurality of exhaust passages communicating with the respective exhaust holes,

A lateral hole communicating the plurality of exhaust passages;

Below the process chamber,

A vacuum pump connected to at least one of the side holes.

7. An opening in the upper wall of the process chamber,

An introduction main body having a structure for moving the process chamber up and down while being isolated from the inside of the process chamber, and sealing the opening at an upper position;

A mounting portion is provided on an upper portion of the introduction main body via an elastic body, and the mounting portion is configured to be capable of adsorbing and detaching the object carrier. Or the process device according to item 1.

8. An opening in the upper wall of the process chamber,

A process apparatus, wherein a mounting portion is provided on an upper portion of the introduction main body via an elastic body, and the mounting portion is configured to be capable of adsorbing and desorbing a carrier to be processed.