WO1999032570A1 - Composition pour polissage mecanique et chimique - Google Patents

Composition pour polissage mecanique et chimique Download PDF

Info

Publication number
WO1999032570A1
WO1999032570A1 PCT/SE1998/002370 SE9802370W WO9932570A1 WO 1999032570 A1 WO1999032570 A1 WO 1999032570A1 SE 9802370 W SE9802370 W SE 9802370W WO 9932570 A1 WO9932570 A1 WO 9932570A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
chemical mechanical
mechanical polishing
polishing
semiconductor substrate
Prior art date
Application number
PCT/SE1998/002370
Other languages
English (en)
Inventor
Peter BERGÖÖ
Kenneth Olof Larsson
Bozena Tokarz
Original Assignee
Akzo Nobel N.V.
Eka Chemicals Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akzo Nobel N.V., Eka Chemicals Ab filed Critical Akzo Nobel N.V.
Priority to AU20809/99A priority Critical patent/AU2080999A/en
Publication of WO1999032570A1 publication Critical patent/WO1999032570A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the present invention relates to the use of a complexing agent in a composition for chemical mechanical polishing of a semiconductor substrate, a composition for such chemical mechanical polishing, and a method in which the composition is used.
  • polishing refers - except where otherwise explicitly or implicitly indicated - in addition to polishing processes performed on the semiconductor substrates at the initial phase of the semiconductor wafer production process, also to technically similar processes such as chemical mechanical planarization, which is abbreviated to "planarization” below.
  • a "semiconductor” means - except where otherwise explicitly or implicitly indicated - a substance having semiconducting properties as well as a semiconductor component. Polishing of semiconductor substrates using silica in combination with ammonium is disclosed in e.g. US-A-3, 715,842.
  • the silica used has preferably a particle size of less than 100 nm.
  • the polishing composition may contain ammonium, which is referred to as an additional polishing agent.
  • NH 4 OH may be present; its contribution to the alkalinity of the silica slurry is briefly discussed. Apart from this the ammonium ions and the NH 4 OH are not suggested to have any particular purpose or impact on the polishing process.
  • the problem to be solved is thus to provide a way to perform polishing on a semiconductor substrate using a amorphous silica-containing composition that may hold a relatively high amount of metals while reducing or avoiding contamination of the semiconductor substrate.
  • the present invention involves the use of a complexing agent in a composition comprising amorphous silica for polishing of a semi- conductor substrate, for the purpose of avoiding metal contamination of said semiconductor substrate, whereby the preferred complexing agent is NH 4 OH.
  • the present invention also relates to a composition for polishing of semiconductor substrates, which composition contains amorphous silica, ammonium ions, and a specific type of complexing agent, namely a sequestering agent, preferably a chelating agent.
  • a sequestering agent is a substance that removes a metal ion from a solution system by forming a complex ion that does not have the chemical reactions of the ion that is removed
  • a chelating agent is an organic compound in which atoms form more than one co-ordinate bond with metals in solution.
  • the chelating agent preferably comprises a plurality of substituted acetic acid groups, and may e.g.
  • EDTA ethylenediaminetetraacetic acid
  • DTPA diethylenetriaminepentaacetic acid
  • HEDTA N-(hydroxoethyl)ethylene- diamintriacetic acid
  • NTA nitrilo triacetic acid
  • the amorphous silica is preferably colloidal, i.e. present in a stable dispersion or sol of discrete particles of amorphous silica; this definition is the same as put forward in "The Chemistry of Silica” by Ralph K. Her, page 312, Wiley & Sons 1979.
  • the sizes of the silica particles are less than 200 nm, and suitably within the range from about 5-150 nm.
  • the present invention relates to a method for polishing of a semi- conductor substrate in which a composition containing amorphous silica, ammonium ions, and a sequestering agent, preferably a chelating agent, is used.
  • the chelating agent preferably comprises a plurality of substituted acetic acid groups, and may e.g. be chosen from a group comprising ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), N-(hydroxoethyl)ethylenediamintriacetic acid (HEDTA), and nitrilo triacetic acid (NTA), or a combination thereof.
  • the method is a method for planarization, which is a process that shows many similarities with polishing, in the more limited scope of that term.
  • the main differences between the methods in fact relate to their purposes, their position in the overall semiconductor wafer production process, and accordingly to the differences between the worked objects:
  • the purpose of the polishing is to prepare the semiconductor substrate for the semiconductor wafer production process by providing it with a suitable surface for that process, whereas the object of the planarization is to accomplish a planarized surface to accommodate further processing.
  • the polishing takes place prior to the actual semiconductor wafer production process, whereas the planarization occurs during the same.
  • the workpiece of the polishing is a basically pure semiconductor substrate
  • the workpiece of the planarization is a semiconductor substrate with various layers applied upon.
  • the substrate in the planarization may for instance be a silicon substrate with a layer of silicon dioxide on top, whereby one of the main purposes of the planarization is to remove the oxide layer.
  • the semiconductor substrate may contain any semiconducting substance.
  • the semiconducting substance in the substrate is Si, GaAs, InP, Ge, or a combination thereof.
  • the present invention will now be illustrated by means of a non-limiting example.
  • the polishing head was pushed down onto a polishing pad with a pressure of 0.8 psi.
  • the head and the pad were rotated in opposite directions, the head at a rotating speed of approximately 60 rpm, and the pad at 60 rpm.
  • a composition according to the invention was added as a polishing slurry onto the pad while rotating, containing an ammonium-stabilised silica sol, Nyacol ® 601 in an amount of 0.5 percentage by weight, calculated on the composition, and a EDTA in an amount of 7 ppm.
  • the wafer was submitted to a standard cleaning procedure in which it was stripped of native oxides in a HF bath, rinsed with deionized water, submerged in a heated and megasonic agitated cleaning bath containing deionized water, hydrogen peroxide, and ammonium hydroxide in a relation of 5:1:1 , rinsed with deionized water, then submerged in a heated and megasonic agitated cleaning bath containing a very dilute solution of hydrogen chloride in deionized water, ans finally rinsed with deionized water.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Cette invention concerne un agent complexant que l'on utilise dans une composition comprenant une silice amorphe et servant à effectuer un polissage chimique et mécanique d'un substrat semi-conducteur. Cet agent permet d'éviter toute contamination métallique du substrat semi-conducteur. Cette invention concerne également une composition de polissage mécanique et chimique de substrats semi-conducteurs, laquelle composition comprend une silice amorphe, des ions ammonium ainsi qu'un agent séquestrant. Cette invention concerne enfin un procédé dans lequel on utilise une telle composition afin de polir un substrat semi-conducteur.
PCT/SE1998/002370 1997-12-23 1998-12-18 Composition pour polissage mecanique et chimique WO1999032570A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU20809/99A AU2080999A (en) 1997-12-23 1998-12-18 A composition for chemical mechanical polishing

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US7129197P 1997-12-23 1997-12-23
US60/071,291 1997-12-23
US991998A 1998-01-21 1998-01-21
US09/009,919 1998-01-21

Publications (1)

Publication Number Publication Date
WO1999032570A1 true WO1999032570A1 (fr) 1999-07-01

Family

ID=26680020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE1998/002370 WO1999032570A1 (fr) 1997-12-23 1998-12-18 Composition pour polissage mecanique et chimique

Country Status (2)

Country Link
AU (1) AU2080999A (fr)
WO (1) WO1999032570A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1229094A2 (fr) * 2001-02-02 2002-08-07 Fujimi Incorporated Composition de polissage et procédé de polissage utilisant cette composition
WO2003054096A1 (fr) * 2001-12-20 2003-07-03 Akzo Nobel N.V. Particules de silice recouvertes d'oxyde de cerium et procede de production associe
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
US7481949B2 (en) 2002-11-08 2009-01-27 Wako Pure Chemical Industries, Ltd Polishing composition and rinsing composition
US7772173B2 (en) 2004-06-18 2010-08-10 Fujimi Incorporated Rinsing composition, and method for rinsing and manufacturing silicon wafer
US7867909B2 (en) 2006-08-24 2011-01-11 Fujimi Incorporated Polishing composition and polishing method
US7998229B2 (en) 2006-02-07 2011-08-16 Fujimi Incorporated Polishing composition and polishing method
CN102441819A (zh) * 2011-10-20 2012-05-09 天津理工大学 一种用于硫系相变材料的化学机械抛光方法及抛光液
CN102952467A (zh) * 2012-11-09 2013-03-06 中国电子科技集团公司第四十六研究所 抛光液及应用该抛光液对CdS晶片抛光的抛光方法
US8632693B2 (en) 2008-07-03 2014-01-21 Fujimi Incorporated Wetting agent for semiconductors, and polishing composition and polishing method employing it

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
JPS63272460A (ja) * 1987-04-28 1988-11-09 Mitsubishi Monsanto Chem Co ウエハ−用研磨剤組成物
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
EP0392364A2 (fr) * 1989-04-10 1990-10-17 Kabushiki Kaisha Toshiba Procédé de fabrication d'un dispositif semi-conducteur
EP0520109A1 (fr) * 1991-05-28 1992-12-30 Rodel, Inc. Bouillies de polissage à base de silice à faible teneur en sodium et en métaux
US5376222A (en) * 1991-09-04 1994-12-27 Fujitsu Limited Polishing method for polycrystalline silicon
EP0774777A1 (fr) * 1995-11-14 1997-05-21 International Business Machines Corporation Procédé pour le polissage chémico-mécanique d'un composant électronique

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
JPS63272460A (ja) * 1987-04-28 1988-11-09 Mitsubishi Monsanto Chem Co ウエハ−用研磨剤組成物
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
EP0392364A2 (fr) * 1989-04-10 1990-10-17 Kabushiki Kaisha Toshiba Procédé de fabrication d'un dispositif semi-conducteur
EP0520109A1 (fr) * 1991-05-28 1992-12-30 Rodel, Inc. Bouillies de polissage à base de silice à faible teneur en sodium et en métaux
US5376222A (en) * 1991-09-04 1994-12-27 Fujitsu Limited Polishing method for polycrystalline silicon
EP0774777A1 (fr) * 1995-11-14 1997-05-21 International Business Machines Corporation Procédé pour le polissage chémico-mécanique d'un composant électronique

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 8851, Derwent World Patents Index; Class A97, AN 88-363748, XP002100340 *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1229094A2 (fr) * 2001-02-02 2002-08-07 Fujimi Incorporated Composition de polissage et procédé de polissage utilisant cette composition
EP1229094A3 (fr) * 2001-02-02 2003-10-22 Fujimi Incorporated Composition de polissage et procédé de polissage utilisant cette composition
US6852009B2 (en) 2001-02-02 2005-02-08 Fujimi Incorporated Polishing composition and polishing method employing it
SG114523A1 (en) * 2001-02-02 2005-09-28 Fujimi Inc Polishing composition and polishing method employing it
WO2003054096A1 (fr) * 2001-12-20 2003-07-03 Akzo Nobel N.V. Particules de silice recouvertes d'oxyde de cerium et procede de production associe
DE10247201A1 (de) * 2002-10-10 2003-12-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer polierten Siliciumscheibe
US7481949B2 (en) 2002-11-08 2009-01-27 Wako Pure Chemical Industries, Ltd Polishing composition and rinsing composition
US7772173B2 (en) 2004-06-18 2010-08-10 Fujimi Incorporated Rinsing composition, and method for rinsing and manufacturing silicon wafer
US7998229B2 (en) 2006-02-07 2011-08-16 Fujimi Incorporated Polishing composition and polishing method
US7867909B2 (en) 2006-08-24 2011-01-11 Fujimi Incorporated Polishing composition and polishing method
US8721909B2 (en) 2006-08-24 2014-05-13 Fujimi Incorporated Polishing composition and polishing method
US8632693B2 (en) 2008-07-03 2014-01-21 Fujimi Incorporated Wetting agent for semiconductors, and polishing composition and polishing method employing it
CN102441819A (zh) * 2011-10-20 2012-05-09 天津理工大学 一种用于硫系相变材料的化学机械抛光方法及抛光液
CN102952467A (zh) * 2012-11-09 2013-03-06 中国电子科技集团公司第四十六研究所 抛光液及应用该抛光液对CdS晶片抛光的抛光方法

Also Published As

Publication number Publication date
AU2080999A (en) 1999-07-12

Similar Documents

Publication Publication Date Title
US7452481B2 (en) Polishing slurry and method of reclaiming wafers
Kern Overview and evolution of silicon wafer cleaning technology
EP0971993B1 (fr) Composition conferant une planarite par l'elimination de films metalliques
US6143705A (en) Cleaning agent
EP1715510B2 (fr) Liquide de nettoyage pour substrat pour dispositif semi-conducteur et procede de nettoyage
TWI518178B (zh) Substrate processing Alkaline aqueous solution composition and substrate etching or cleaning method
US6409781B1 (en) Polishing slurries for copper and associated materials
US5896870A (en) Method of removing slurry particles
US8114178B2 (en) Polishing composition for semiconductor wafer and polishing method
US6410494B2 (en) Cleaning agent
CN101722462B (zh) 抛光半导体晶片两面的方法
EP0897975B1 (fr) Composition nettoyante
EP3169765B1 (fr) Composition de nettoyage après polissage mécano-chimique et procédés associés
JP3219020B2 (ja) 洗浄処理剤
US6338805B1 (en) Process for fabricating semiconductor wafers with external gettering
CN102623327B (zh) 一种化学机械研磨方法
IL120912A (en) Aqueous ointment for mechanical chemical polishing that contains a fluoride additive and a method of using it
WO1999032570A1 (fr) Composition pour polissage mecanique et chimique
EP1218466A1 (fr) Compositions et procedes permettant de reduire/eliminer les rayures et les defauts produits au cours d'un procede de polissage chimico-mecanique d'oxyde de silicium
US20040266191A1 (en) Process for the wet-chemical surface treatment of a semiconductor wafer
JP2000173956A (ja) 半導体シリコンウェーハ研磨用研磨剤及び研磨方法
Wang et al. A modified multi-chemicals spray cleaning process for post-CMP cleaning application
JPH08306651A (ja) アルカリ性洗浄組成物及びそれを用いた基板の洗浄方法
JP3198878B2 (ja) 表面処理組成物及びそれを用いた基体の表面処理方法
WO2020171003A1 (fr) Liquide de nettoyage pour élimination de composé cérium, procédé de nettoyage, et procédé de fabrication de tranche semi-conductrice

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase