WO1999024640A1 - Procede de surveillance de corps etrangers dans un dispositif de traitement par plasma - Google Patents

Procede de surveillance de corps etrangers dans un dispositif de traitement par plasma Download PDF

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Publication number
WO1999024640A1
WO1999024640A1 PCT/JP1997/004119 JP9704119W WO9924640A1 WO 1999024640 A1 WO1999024640 A1 WO 1999024640A1 JP 9704119 W JP9704119 W JP 9704119W WO 9924640 A1 WO9924640 A1 WO 9924640A1
Authority
WO
WIPO (PCT)
Prior art keywords
amount
foreign matter
reaction product
plasma processing
monitoring method
Prior art date
Application number
PCT/JP1997/004119
Other languages
English (en)
Japanese (ja)
Inventor
Kazue Takahashi
Tomoyuki Tamura
Makoto Nawata
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/004119 priority Critical patent/WO1999024640A1/fr
Publication of WO1999024640A1 publication Critical patent/WO1999024640A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Definitions

  • the present invention relates to a foreign matter monitoring method suitable for maintaining stable operation of a plasma processing apparatus.
  • a single laser beam is irradiated to measure the number of fine particles such as floating reaction products, and the density of the fine particles is calculated from the intensity of scattered light by the fine particles.
  • this measurement system is provided in the exhaust system of a plasma processing apparatus to monitor the state of foreign matter generation in the apparatus.
  • This method is known as an effective method in the chemical vapor deposition method (Chemical vapor deposition method) in which minute foreign substances are generated in the gas phase.
  • a reaction product generated by etching floats and is trapped in a sheath formed on an object to be processed (wafer), and further adheres to the wall surface of the etching chamber as a deposited film, so that it is inevitable. Since not all gas is exhausted through the exhaust system, the particle monitor value by laser scattered light does not usually correspond to the number of foreign particles on the wafer.
  • the current situation is that the number of adhered particles on the wafer is usually obtained regularly using a dummy wafer, and the transition of the number of particles is monitored during the continuous processing. If the number of foreign substances exceeds a predetermined allowable value, countermeasures such as stopping the etching device and performing cleaning are taken.
  • a foreign substance monitoring system using a dummy wafer is employed.
  • this inspection is performed for each wafer only. Difficult due to throughput and economic issues. For this reason, it has to be performed for every several tens or more wafers processed. Therefore, it is not possible to monitor the state of foreign matter generation during that time. If foreign matter frequently occurs on the way, the processed wafer during that time will be defective. This danger increases as the number of foreign substance inspections performed by the dummy wafer decreases.
  • the cost of dummy wafers has also increased significantly, necessitating cost reductions.
  • the present invention described in claim 1 monitors the amount of reaction products generated by plasma processing and the amount of products released into the gas phase by plasma. Differences in plasma processing equipment with sensors In the object monitoring method, the amount of the reaction product monitored by the above sensor when the number of foreign substances adhering to the object to be processed is less than the allowable number, and the number of foreign objects adhering to the object to be processed is larger than the allowable number.
  • a foreign matter monitoring method for a plasma processing apparatus comprising comparing the amount of a reaction product monitored by the sensor and monitoring a foreign matter generation level.
  • a plasma processing apparatus including a sensor for monitoring an amount of a reaction product generated by the plasma processing and a quantity of a product released into the gas phase by the plasma.
  • the difference between the amount of the reaction product measured by the sensor before performing the plasma treatment on the object and the amount of the reaction product measured after performing the plasma treatment on the object is determined by the object.
  • the difference is stored as an added adhesion reaction product, and a difference in the amount of the adhesion reaction product is obtained for each object to be processed, and the value obtained by integrating these values is integrated.
  • a method for monitoring foreign matter in a plasma processing apparatus wherein the amount is a reaction product deposition amount.
  • FIG. 1 is a diagram showing a plasma etching apparatus to which the present invention is applied.
  • FIG. 2 is a diagram showing the transition of the number of foreign particles obtained by measuring the number of foreign particles attached to the wafer for each lot.
  • FIG. 3 is a diagram showing a method for managing foreign matter on a wafer.
  • FIG. 4 is a diagram showing a case of cleaning between mouths.
  • FIG. 5 is a diagram showing a case of cleaning for each wafer.
  • FIG. 6 is a diagram showing the correlation between the accumulated amount of the reaction product accumulated and the number of foreign substances on the wafer.
  • FIG. 1 is a schematic diagram of a microwave plasma etching apparatus to which the present invention is applied.
  • an electrode 3 for mounting a wafer 2 is installed in an etching chamber 1, and a high frequency power supply 4 for applying a bias voltage to the wafer 2 is connected to the electrode 3.
  • a microphone mouth wave is introduced into the etching chamber 1 through the quartz window 6 through the waveguide 5 in order to generate plasma in the etching chamber 1.
  • a coil 7 generates a magnetic field necessary for generating plasma by the electron cyclotron in the etching chamber 1.
  • the etching chamber 1 is evacuated by a vacuum pump 8 and a pressure regulating valve 9.
  • a sensor 10 for measuring the amount of deposits such as reaction products at the time of etching is installed in the etching chamber 1.
  • an etching gas is supplied to the etching chamber 1, and a transport mechanism for loading and unloading the wafer 2 is also connected to the etching chamber 1.
  • the plasma etching system as a whole is further provided with an atmospheric loader for installing a wafer cassette, an entry chamber for introducing and unloading wafers in vacuum, and an unloading chamber.
  • An assing chamber for removing the mist is provided, and a transport robot for supplying the wafer is connected between these isolation chambers. Since the present invention can be applied to any plasma processing unit, the present invention can be applied to a plasma assing chamber.However, the same applies when the etching chamber is regarded as an assing chamber. I will explain.
  • the etching gas is supplied and when the pressure reaches a predetermined pressure, a microwave of a frequency of 2.45 GHz is introduced.
  • the magnetic field is 875 G, electron cyclotron resonance occurs and plasma is generated.
  • a voltage for electrostatically adsorbing the wafer 2 to the electrode 3 is applied (not shown), and a back surface gas for controlling the temperature of the wafer 2 is supplied between the wafer 2 and the electrode 3.
  • the high frequency power supply 4 is operated to apply a bias voltage to the wafer 2.
  • ions for etching enter the wafer 2 from the plasma, and the layer to be etched (eg, aluminum wiring, polysilicon, silicon oxide film, etc.) on the wafer surface is etched by the action of the etching gas and ions.
  • the layer to be etched eg, aluminum wiring, polysilicon, silicon oxide film, etc.
  • the etching gas and ions are etched by the action of the etching gas and ions.
  • reaction products all of which are collectively referred to as reaction products
  • the supply of the backside gas to the wafer 2 is stopped, the backside gas is exhausted, and the application of the voltage for electrostatic attraction is stopped.
  • This is followed by the stoppage of the output of the microphone mouth wave, the supply of the etching gas, the evacuation of the etching chamber 1, and the removal of the wafer.
  • 25 8-inch wafers are referred to as one unit (wafer cassette unit), and wafer management is often performed in units of one unit.
  • the above-described etching is performed for each wafer.
  • plasma cleaning may be periodically performed by introducing a gas capable of effectively removing the deposit.
  • this period is once every lot or every few lots.
  • cleaning in-situ cleaning
  • plasma cleaning is not performed, and if there are many foreign substances, the etching chamber may be periodically opened to the atmosphere for cleaning.
  • the amount of the foreign substance deposit Conventionally, there was no information on the amount of reaction product deposited.Therefore, a process was performed to measure foreign matter adhering to the wafer after plasma cleaning, and to measure wafer defects due to foreign matter adhesion.
  • Fig. 2 shows an example in which the number of foreign substances adhering to the wafer is measured for each lot.
  • the number of foreign substances fluctuates considerably, and the phenomenon that wafer processing becomes impossible due to the large amount of foreign substances is shown. What happens is sudden. If the number of foreign particles gradually increases, monitoring the increasing trend can predict the cleaning time due to opening to the atmosphere, thereby preventing the occurrence of product defects due to the high number of foreign particles.
  • cleaning that has been investigated in advance The required number of processed wafers is determined, and cleaning is performed periodically. Although this method is effective, the time until cleaning must be set with a margin, so the equipment must be stopped even if no foreign matter is generated. Therefore, there is a problem that operating time and production volume decrease.
  • the amount of reaction products deposited on the inner wall of the etching chamber 1 can be directly monitored. Although a strictly proportional relationship does not hold between the amount of sediment (weight per unit area or thickness) and the number of foreign substances, foreign substances tend to occur more frequently than a certain limit. There is. Therefore, it is possible to determine this relationship in advance and determine the cleaning time of the etching chamber 1 based on the measured amount of deposit. As mentioned above, it is sudden and difficult to predict that the number of foreign substances is high. However, this indicates that the number of foreign substances adhering to the wafer and the amount of deposits are not in a proportional relationship, and It does not deny that foreign matter tends to occur more frequently when the amount exceeds the limit.
  • the present invention used a quartz film thickness meter known as a film thickness monitor.
  • This sensor 10 was set in the etching chamber 1.
  • the resonance frequency of the quartz oscillator decreases due to an increase in the weight of the deposits based on the principle of measuring the film thickness. That is, the weight of the attached substance can be measured by measuring the change in the resonance frequency of the crystal resonator.
  • the density of the reaction product is not always constant, and it is difficult to convert it to a film thickness. Absent.
  • FIG. 3 shows a method for managing foreign matter by monitoring sediment according to the present invention.
  • the amount of deposits on the inner wall of the etching chamber is measured by the sensor 10.
  • This value is processed by the film thickness controller 11, and the signal is sent to the data management system 12 of the etching apparatus.
  • the data management system 12 is a personal computer or the like.
  • the data on the amount of deposit for each wafer sent from the film thickness meter controller 11 is stored in a data storage device 13 provided inside the data management system 12.
  • This data storage device 13 is specifically a hard disk or the like, and it goes without saying that it may be installed as an external processing device of the data management system 12.
  • the data can be transferred to the higher-level system 14 and managed.
  • the film thickness of the sensor 10 is measured before and after the etching of the wafer, and the difference is stored as the amount of the reaction product deposited by the etching of the wafer.
  • Figures 4 and 5 show the situation. Fig. 4 shows an example in which plasma cleaning is performed for each of 25 wafer lots, and Fig. 5 shows an example in which short-time plasma cleaning is performed for each wafer.
  • the film thickness which is the output of the sensor 10
  • the reaction product accumulation amount of this wafer is stored as one.
  • the film thickness of the previous wafer at the end of etching may be regarded as the film thickness of the next wafer before etching, but the film thickness before and after etching for each wafer It is desirable to measure the thickness.
  • the increase or decrease in the film thickness is measured before and after the process, and the change value is measured. What is necessary is just to set the film thickness change amount in the process.
  • the value at this time is, for example, a negative value (in a state where the film thickness is reduced) in the cleaning after the end of the lot etching in FIG.
  • the actual measured values of the film thickness can be measured correctly.
  • the zero point fluctuates, for example, a wafer of t 25 in FIG. 4, an accumulated number of wafers after performing the cleaning of the etching chamber 1 even been made in 1 000 sheet, it comes to how good as intact t 25 the reaction product deposition amount during 1000 sheets etching. In this onset bright, adopting the integrated value instead t 25 as deposit amount.
  • the temperature of the sensor 10 also affects the measured film thickness. Although the temperature of the sensor 10 is not described in detail in the present invention, it can be dealt with by controlling the temperature of the sensor 10 so as not to affect the measured value. Alternatively, measure the temperature of sensor 10
  • the correlation between the sensor temperature and the measured value may be determined in advance, and the data may be converted to a correct value when processing the data.
  • the amount of reaction product deposited is stored every time each wafer is etched, and the measured values are added each time the number of wafers is added to obtain the total amount of reaction product deposited with respect to the number of wafers processed. .
  • a warning should not be issued when the accumulated amount of accumulated reaction product exceeds a certain limit, or when cleaning the equipment.
  • a signal such as a signal indicating that the current period is reached.
  • the amount of reaction product deposition is known, it is possible to determine, for example, whether the phenomenon of frequent occurrence of foreign substances near the number of lots of 80 in FIG. 2 is a phenomenon in which the etching chamber should be cleaned. It goes without saying that various uses can be made, including determination whether plasma cleaning has been sufficiently performed.
  • Figure 6 shows the correlation between the amount of accumulated reaction product and the number of foreign particles on the wafer.
  • the allowable level of foreign substances is 60
  • the accumulated amount of reaction product exceeds about 70 (arbitrary memory)
  • the number of foreign substances gradually increases, and the accumulated amount of reaction product becomes 9 Above 0, the number of foreign substances increases rapidly, indicating that cleaning must be performed.
  • the etching is continued until a foreign substance frequently occurs.
  • the allowable accumulated reaction product accumulation amount is set to 70, and cleaning is performed immediately before the foreign substance frequently occurs. carry out. For this reason, it is possible to prevent production in a state in which foreign substances are frequently generated.
  • a method of determining and managing the allowable accumulated amount of accumulated reaction products may be used, but this method alone cannot cope with a sudden foreign matter generation phenomenon as shown in FIGS.
  • this method alone cannot cope with a sudden foreign matter generation phenomenon as shown in FIGS.
  • foreign matter occurs beyond the allowable value, but it is difficult to determine whether it will continue to occur frequently or if it is a temporary phenomenon.
  • it is effective to monitor the absolute value of the deposition amount and to check for abnormal reaction product deposition. Therefore, it is desirable to evaluate the rate of increase or decrease in the amount of reaction product deposition, issue a warning if the rate of increase or decrease is too large, and add sufficient analysis.
  • the generation of foreign matter was sudden, and it was found that the wafer could be processed continuously thereafter.
  • the data can be analyzed to determine which wafer There is also an effect that it is possible to determine whether or not a defect has occurred.
  • the present invention can be applied to other plasma processing apparatuses such as an electromagnetic induction plasma and an electromagnetic coupling plasma.
  • the time when the plasma processing apparatus should be opened to the air and cleaned is known in advance, so that cleaning can be immediately performed when it is truly necessary. Therefore, if the cleaning period is determined with a margin, the cleaning period can be extended, which has the effect of reducing costs related to cleaning and increasing the operating time of the equipment, thereby improving productivity. Also, if foreign matter suddenly occurs frequently before the regular cleaning period is reached, the possibility of foreign matter occurrence can be grasped.Therefore, there is also an effect that occurrence of defective wafers can be prevented by cleaning in advance. .

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Dans un procédé de surveillance de corps étrangers, un appareil de surveillance d'épaisseur de film est installé sur un dispositif de traitement par plasma de manière à limiter la présence de corps étrangers dans le dispositif de traitement par plasma; la quantité de produit de réaction déposé est déterminée à chaque tranche; puis une alarme est produite lorsque la quantité cumulée de corps étrangers déposés atteint une valeur admissible prédéterminée. Un appareil de mesure d'épaisseur de film est installé sur le dispositif de traitement par plasma comme appareil de surveillance de corps étrangers, et la présence de corps étrangers est surveillée à partir de la quantité de produit de réaction déposé. Comme la quantité de produit de réaction déposé, qui est directement liée aux corps étrangers, peut être mesurée, il est possible de prévoir le temps de nettoyage nécessaire au dispositif de traitement par plasma.
PCT/JP1997/004119 1997-11-12 1997-11-12 Procede de surveillance de corps etrangers dans un dispositif de traitement par plasma WO1999024640A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/004119 WO1999024640A1 (fr) 1997-11-12 1997-11-12 Procede de surveillance de corps etrangers dans un dispositif de traitement par plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/004119 WO1999024640A1 (fr) 1997-11-12 1997-11-12 Procede de surveillance de corps etrangers dans un dispositif de traitement par plasma

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101424920A (zh) * 2007-10-30 2009-05-06 恩益禧电子股份有限公司 用于表面加工处理装置或成膜处理装置的异物检查/解析的数据处理及管理装置及方法
US10076565B2 (en) 2007-11-12 2018-09-18 The Trustees Of The University Of Pennsylvania Vaccines against multiple subtypes of influenza virus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224232A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd エッチング装置
JPH09171992A (ja) * 1995-12-20 1997-06-30 Hitachi Ltd ドライエッチング装置
JPH09219392A (ja) * 1996-02-08 1997-08-19 Mitsubishi Electric Corp 半導体製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224232A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd エッチング装置
JPH09171992A (ja) * 1995-12-20 1997-06-30 Hitachi Ltd ドライエッチング装置
JPH09219392A (ja) * 1996-02-08 1997-08-19 Mitsubishi Electric Corp 半導体製造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101424920A (zh) * 2007-10-30 2009-05-06 恩益禧电子股份有限公司 用于表面加工处理装置或成膜处理装置的异物检查/解析的数据处理及管理装置及方法
US7904275B2 (en) 2007-10-30 2011-03-08 Renesas Electronics Corporation Data processing and management equipment and method for data analysis of particles in surface structuring device or film forming device
US10076565B2 (en) 2007-11-12 2018-09-18 The Trustees Of The University Of Pennsylvania Vaccines against multiple subtypes of influenza virus

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