WO1999016128A1 - Module a semiconducteur - Google Patents

Module a semiconducteur Download PDF

Info

Publication number
WO1999016128A1
WO1999016128A1 PCT/JP1997/003329 JP9703329W WO9916128A1 WO 1999016128 A1 WO1999016128 A1 WO 1999016128A1 JP 9703329 W JP9703329 W JP 9703329W WO 9916128 A1 WO9916128 A1 WO 9916128A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
radiator
board
solder
semiconductor package
Prior art date
Application number
PCT/JP1997/003329
Other languages
English (en)
Japanese (ja)
Inventor
Atsuo Nishihara
Tadakatsu Nakajima
Kenichi Kasai
Akio Idei
Ryoji Okada
Keiji Taguchi
Takashi Naganawa
Hiroshi Moriya
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1997/003329 priority Critical patent/WO1999016128A1/fr
Publication of WO1999016128A1 publication Critical patent/WO1999016128A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Definitions

  • the present invention relates to a semiconductor module and a method for manufacturing the semiconductor module.
  • semiconductor modules that generate a large amount of heat have been cooled by cooling the modules at once.
  • the semiconductor package mounted on this module is combined and connected to an air-cooled or water-cooled radiator to remove heat from the semiconductor.
  • the reliability of the electrical contacts of the semiconductor package depends on the method of connecting the radiator to the semiconductor package.
  • the semiconductor package is connected to the substrate by fine solder balls, and the solder balls may be fatigue-ruptured and disconnected due to repeated force applied to the package from the radiator. Therefore, it is necessary to prevent the radiator from applying force to the semiconductor package even if the module is deformed by the heat generated during operation of the semiconductor.
  • the connecting member since the height of the semiconductor package from the substrate is different due to manufacturing tolerances, the connecting member must absorb the difference in height and connect to the radiator.
  • thermal conductivity of the high thermal conductive flexible material is less than about 110 compared to high thermal conductive ceramics such as metal such as copper and aluminum nitride, a slight increase in thickness reduces the cooling capacity.
  • Cause Figure 12 shows the thermal resistance of typical thermal conductive elastomers and compounds. -': ⁇ -By the way, if the method of compressing the thermal conductive elastomer to absorb the tolerance of component height is adopted, at least the lowest package mounted on the board will have at least An elastomer with a thickness equal to the height difference from the highest package on the board must be placed. In particular, when mounting and cooling a semiconductor package having a large calorific value, the cooling capacity may be insufficient due to the thermal resistance of the elastomer having that thickness.
  • thermal conductivity of the thermal conductive elastomer is at most about 2 WZ m K among the currently available ones.
  • the temperature difference between the temperature of the semiconductor element and the cooling water must be suppressed to about 60.
  • the thermal resistance from the cooling water to the semiconductor element can be roughly divided into
  • the heat conduction of the heat-conducting elastomer layer and the heat conduction of other members there are three elements, the heat conduction of the heat-conducting elastomer layer and the heat conduction of other members, and the heat resistance of the heat-conducting elastomer layer is preferably kept to 1/3 or less, that is, 20 or less. I want to.
  • the thickness of the thermal conductive elastomer must be 4 Om or less. Since the deformation of the elastomer is about 30% of the initial thickness, the deformation that can be absorbed by the 40 m elastomer film is about 13 ⁇ m. On the other hand, the manufacturing variation of the height of the semiconductor package may reach 100 / m.
  • the height variation of the package cannot be absorbed by the elastic deformation of the elastomer film.
  • the diameter of the solder ball of the contact point is about 100 / m. 1 0 0
  • An object of the present invention is to provide a semiconductor module having a deformation absorbing ability against thermal deformation of a module while connecting the semiconductor chip or package to a radiator with a small thermal resistance.
  • Another object of the present invention is to provide a semiconductor module which does not apply undue stress to electrical contacts of the semiconductor package and has low thermal resistance when there are manufacturing tolerances in the radiator, frame and semiconductor package. It is to provide an assembly method.
  • a height of the height by adjusting the thickness by melting the solder layer between the semiconductor package and the radiator and melting this solder layer Adjust the contact so that the contact surface with the radiator is flush.
  • a layer of repli- cation solder is also interposed between the frame and the radiator, and the solder layer is melted so that the upper surface of the frame and the radiator are in close contact.
  • the thickness of the high thermal conductive flexible material layer joining the semiconductor and the radiator can be reduced to the limit for having a deformation absorbing ability against thermal deformation of the module during operation, and the thermal resistance can be reduced. Can be reduced. Also, when there are manufacturing tolerances in heatsinks, frames and semiconductor package components, it is possible to easily assemble a semiconductor module with a small thermal resistance without applying unreasonable stress to the electrical contacts of the semiconductor package. Can be.
  • FIG. 1 is a diagram showing a first embodiment of the present invention.
  • FIG. 2 is a view showing a method of forming a film according to a first embodiment of the present invention.
  • FIG. 3 is a diagram showing another embodiment of the present invention.
  • FIG. 4 is a diagram showing another embodiment of the present invention.
  • FIG. 5 is a diagram showing another embodiment of the present invention.
  • FIG. 6 is a diagram showing another embodiment of the present invention.
  • FIG. 7 is a diagram showing another embodiment of the present invention.
  • FIG. 8 is a view showing another method for forming the film of the present invention.
  • FIG. 9 is a diagram showing the surface of the film of the present invention.
  • FIG. 10 is a diagram showing another method for forming the film of the present invention.
  • FIG. 11 is a view showing a contact surface with the membrane of the present invention.
  • FIG. 12 is a diagram showing a typical thermal conduction elastomer and the thermal resistance of the compound.
  • 1 is a semiconductor package
  • 2 is a semiconductor module substrate
  • 3 is a heat sink
  • 4 is a frame
  • 5 is a solder ball
  • 6 is a replica solder
  • 7 is a ceramic board
  • 8 is an elastomer.
  • Membrane 9 is 0 ring
  • 10 is bolt
  • 11 is replica solder
  • 12 is foil
  • 13 is thin plate
  • 14 is elastomer
  • 15 is chip backside solder
  • 16 is chip solder.
  • 17 is a solder ball
  • 18 is a ceramic cap
  • 19 is sealing solder
  • 20 is a flat plate
  • 21 is a release agent.
  • FIG. 1 shows a first embodiment of the present invention.
  • 1 is a semiconductor package
  • 2 is a semiconductor module substrate
  • 3 is a radiator
  • 4 is a module frame.
  • the semiconductor package 1 is connected to the substrate 2 via a minute solder ball 5.
  • Semiconductor Corrected Paper (Rule 91)
  • the heat generated in the knock 1 is transmitted to the radiator 3 via the replica solder 6, the ceramic plate 7 and the elastomer film 8, and is released outside by the cooling water.
  • the semiconductor chip is mounted on a package substrate 16 with solder balls 17 and sealed with a ceramic cap 18. Between the ceramic cap and the ceramic plate 7, a repli-force solder 6 for adjusting the height due to the manufacturing tolerance of the semiconductor package is sandwiched. The variation in height is absorbed by the repli- force solder 6, and the upper portion of the ceramic plate 7 is captured on the same plane. As a result, the distance between the ceramic plate 7 and the radiator 3, that is, the thickness of the elastomer film 8 attached to each semiconductor package can be reduced, and the thermal resistance can be reduced. At this time, if the ceramic plate 7 is made larger than the ceramic cap 18, the protruding solder spreads on the ceramic plate, and the package board is not connected. It is possible to prevent the solder from flowing out toward 16. In addition, at the same time, the ceramic plate 7 functions as a heat diffusion plate, and the thermal resistance can be reduced.
  • the module is hermetically sealed by inserting a ring 9 between the radiator and the frame and fastening it with a bolt 10 to prevent corrosion of the semiconductor package. At this time, in order to secure the distance between the radiator and the board with high accuracy, tighten the bolt until the 0-ring is crushed and the radiator and the frame abut.
  • the frame 4 Since the frame 4 is fixed to the substrate 2 by soldering and is warped by initial deformation due to processing and thermal deformation due to soldering, when the frame 4 is overlapped with a radiator, a gap of several tens / m is partially formed. May open. If the bolt 10 is tightened as it is, the entire module will be deformed when the gap between the frame and the radiator closes. In order to prevent this deformation, a replica solder 11 is also inserted between the radiator and the frame. Since the upper surface of the frame is in close contact with the radiator by the solder layer, it does not deform when the screws are fastened. The stress on the contacts of the die can be avoided.
  • step (8) a heat-curable thermal conductive elastomer is used, and the assembly process is as follows. (1) Solder the frame on the board. (2) Mount the semiconductor package on the board. (3) Join the ceramic board on the semiconductor package with a replica solder. (4) Supply replica solder to the top of the frame. (5) Apply a thermal conductive elastomer on the radiator. (6) Heat the heat sink to harden the elastomer. (7) Place a radiator on the board and heat it, melt the solder, and fill the gap between the frame and the semiconductor package with the radiator. (8) Remove the radiator, insert the 0 ring, and fasten the bolt.
  • the radiator should be on a surface that will not wet the solder so that the jacket can be removed.
  • the solder melting temperature is also conceivable in which the gap for the elastomer film is opened by the difference in the coefficient of thermal expansion between the radiator and the frame during cooling from room temperature to room temperature.
  • the assembly process is as follows. (1) Solder the frame on the board. (2) Mount the semiconductor package on the board. (3) The ceramic plate is joined to the semiconductor package by soldering. (4) Supply the replied solder to the top of the frame. (5) Place a radiator on the board and heat it to melt the replica solder to fill the gap between the frame and the semiconductor package and the radiator.
  • the thickness of the elastomer membrane can be adjusted to a very high precision (Rule 91). And can be made uniform.
  • the film thickness can be controlled by a similar process.
  • the curing of the thermal conductive elastomer and the formation of the replica solder may be performed simultaneously.
  • the assembly process is as follows. (1) Solder the frame on the board. (2) Mount the semiconductor package on the board. (3) A ceramic plate is bonded on the semiconductor package with a REPLICA solder. (4) Supply replica solder to the top of the frame. (5) Apply a heat conductive elastomer to the radiator. (6) Heat the radiator. After the heat conductive elastomer is cured, heat the radiator further and place it on the board after the replica solder has melted, filling the gap between the frame and the semiconductor package and the radiator. (7) Remove the heatsink, insert the 0-ring, and tighten the bolt. When using this process, adjust the coefficient of thermal expansion and dimensions of the radiator and frame so that the space between the radiator and the semiconductor package does not increase even after cooling to room temperature after forming the solder. To
  • Figure 2 shows the method of applying the thermal conductive elastomer.
  • a perforated foil 12 is attached to the radiator 3, an elastomer 14 is applied with a thin plate 13, and then heated and cured.
  • the thickness of the elastomer is equal to the thickness of the foil 12, and a flat film having a constant thickness can be formed.
  • FIG. 3 shows another embodiment of the present invention.
  • the center of gravity of frame 4 of the module has a shape close to the ceramic substrate side. By bringing the center of gravity of the frame closer to the board, warpage deformation when the frame is soldered to the board can be kept small.
  • FIG. 4 shows another embodiment of the present invention.
  • a semiconductor is mounted as it is on a base. Since the height of the upper surface of the chip varies due to the undulation of the substrate 2, the replica solder 6 is interposed between the heat diffusion plate 7 and the chip, and the height of the heat diffusion plate is made uniform. In this way, the LSI is mounted on a bare chip. Also in this case, by using the present invention, it is possible to increase the cooling performance by making the heat conductive elastomer film thin.
  • FIG. 5 shows another embodiment of the present invention.
  • This embodiment has a structure in which a heat conductive elastomer film is directly contacted with a replica solder 6 provided on a semiconductor package without using a heat diffusion plate.
  • FIG. 6 shows another embodiment of the present invention.
  • the upper surface of the semiconductor package 1 and the lower surface of the heat diffusion plate 7 are formed obliquely. Then, the height of the heat spreader can be changed by shifting the position of the heat spreader with respect to the semiconductor package. Therefore, the height variation of the semiconductor package can be absorbed by moving each heat diffusion plate to a position where the height of the upper surface of the heat diffusion plate is uniform and fixing it to the semiconductor package.
  • FIG. 7 shows another embodiment of the present invention.
  • the height variation of the semiconductor package is absorbed by changing the thickness of the sealing solder 19 of the semiconductor package and the solder 15 of the chip back surface.
  • the heat diffusion plate is not used, so it is preferable to increase the size of the semiconductor package so that the cap has the effect of the heat diffusion plate.
  • the height variation is absorbed by the sealing solder and the backside solder, it is necessary to increase the amount of supplied solder, and the solder overflows at the time of fixation, so the space for the solder to escape inside the package Need to be provided.
  • FIG. 8 shows another embodiment of the present invention, and shows another method for forming an elastomer film.
  • the template 21 is applied to the surface of the flat plate 20, and the elastomer 14 is sandwiched between the flat plate 20 and the ceramic plate 7 to form a film having a desired thickness. Heat and cure.
  • a flat plate 20 made of fluororesin may be used. At this time, the surface of the flat plate 20 is subjected to fine unevenness processing, whereby unevenness can be formed on the surface of the elastomer 14.
  • Corrected form (Rule 91)
  • Figure 9 (a) shows an enlarged view of the surface of the elastomer film formed by the coating method.
  • Fig. 9 (b) shows the surface of the film formed by sandwiching it between smooth flat plates. In this case, since the elastomer makes flat contact with the heat transfer surface, the elastic modulus is large from the beginning, and a large force is applied to the contact. Fig.
  • FIG. 10 shows another embodiment of the present invention, which shows another method of forming an elastomer film. After forming a smooth film, the film is finely cut with a thin razor-shaped cutter 23 as shown in FIG. By this method, the apparent elastic modulus can be reduced while keeping the surface of the membrane flat.
  • FIG. 11 shows another embodiment of the present invention, in which a heat transfer sheet in contact with an elastomer film is corrected (Rule 91). Surface.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un procédé permettant de connecter des puces ou des boîtiers de semiconducteur (1) à un radiateur (3) dans un état de faible résistance thermique et de faible rigidité, au moment du refroidissement collectif d'un module à semiconducteur par le radiateur. Selon ce procédé, des couches minces (8) d'un matériau flexible présentant une conductivité thermique élevée sont placées entre les puces ou boîtiers de semiconducteur (1) et le radiateur (3), et les couches de soudure reproduites (6 et 11) sont respectivement placées entre les puces ou boîtiers de semiconducteur (1) et le radiateur (3), et entre un support (4) et le radiateur (3).
PCT/JP1997/003329 1997-09-19 1997-09-19 Module a semiconducteur WO1999016128A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003329 WO1999016128A1 (fr) 1997-09-19 1997-09-19 Module a semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1997/003329 WO1999016128A1 (fr) 1997-09-19 1997-09-19 Module a semiconducteur

Publications (1)

Publication Number Publication Date
WO1999016128A1 true WO1999016128A1 (fr) 1999-04-01

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ID=14181159

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1997/003329 WO1999016128A1 (fr) 1997-09-19 1997-09-19 Module a semiconducteur

Country Status (1)

Country Link
WO (1) WO1999016128A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009050130A2 (fr) * 2007-10-11 2009-04-23 Ge Fanuc Intelligent Platforms Embedded Systems, Inc. (N. D. Gesetzen D. Staates Delaware) Dispositif de refroidissement de puce avec élément en forme de coin
JP2011198868A (ja) * 2010-03-18 2011-10-06 Hitachi Ltd 電子機器の冷却構造
US10991638B2 (en) 2018-05-14 2021-04-27 Samsung Electronics Co., Ltd. Semiconductor package system
US11075138B2 (en) 2018-05-11 2021-07-27 Samsung Electronics Co., Ltd. Semiconductor package system
US11244885B2 (en) 2018-09-18 2022-02-08 Samsung Electronics Co., Ltd. Semiconductor package system
US11600607B2 (en) 2019-01-17 2023-03-07 Samsung Electronics Co., Ltd. Semiconductor module including multiple power management semiconductor packages
WO2024024066A1 (fr) * 2022-07-28 2024-02-01 日立Astemo株式会社 Dispositif de conversion de puissance

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289847A (ja) * 1987-05-21 1988-11-28 Nec Corp Ｌｓｉパッケ−ジの放熱構造
JPH0240942A (ja) * 1988-07-13 1990-02-09 Internatl Business Mach Corp <Ibm> 電子パツケージ
JPH03270259A (ja) * 1990-03-20 1991-12-02 Nec Corp 集積回路の冷却装置
JPH05152473A (ja) * 1991-11-29 1993-06-18 Nec Corp 集積回路の取付方法および冷却方法
JPH06302728A (ja) * 1993-04-12 1994-10-28 Oki Electric Ind Co Ltd セラミック多層基板上におけるｌｓｉ放熱構造
JPH07106477A (ja) * 1993-07-06 1995-04-21 Hewlett Packard Co <Hp> 熱伝導板付きヒートシンクアセンブリ
JPH07245362A (ja) * 1994-03-07 1995-09-19 Fujitsu Ltd マルチチップ型半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63289847A (ja) * 1987-05-21 1988-11-28 Nec Corp Ｌｓｉパッケ−ジの放熱構造
JPH0240942A (ja) * 1988-07-13 1990-02-09 Internatl Business Mach Corp <Ibm> 電子パツケージ
JPH03270259A (ja) * 1990-03-20 1991-12-02 Nec Corp 集積回路の冷却装置
JPH05152473A (ja) * 1991-11-29 1993-06-18 Nec Corp 集積回路の取付方法および冷却方法
JPH06302728A (ja) * 1993-04-12 1994-10-28 Oki Electric Ind Co Ltd セラミック多層基板上におけるｌｓｉ放熱構造
JPH07106477A (ja) * 1993-07-06 1995-04-21 Hewlett Packard Co <Hp> 熱伝導板付きヒートシンクアセンブリ
JPH07245362A (ja) * 1994-03-07 1995-09-19 Fujitsu Ltd マルチチップ型半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009050130A2 (fr) * 2007-10-11 2009-04-23 Ge Fanuc Intelligent Platforms Embedded Systems, Inc. (N. D. Gesetzen D. Staates Delaware) Dispositif de refroidissement de puce avec élément en forme de coin
WO2009050130A3 (fr) * 2007-10-11 2009-07-02 Ge Fanuc Intelligent Platforms Dispositif de refroidissement de puce avec élément en forme de coin
US8662155B2 (en) 2007-10-11 2014-03-04 GE Intelligent Platforms Embedded Systems, Inc. Chip cooling device having wedge element
JP2011198868A (ja) * 2010-03-18 2011-10-06 Hitachi Ltd 電子機器の冷却構造
US11075138B2 (en) 2018-05-11 2021-07-27 Samsung Electronics Co., Ltd. Semiconductor package system
US10991638B2 (en) 2018-05-14 2021-04-27 Samsung Electronics Co., Ltd. Semiconductor package system
US11658090B2 (en) 2018-05-14 2023-05-23 Samsung Electronics Co., Ltd. Semiconductor package system
US11244885B2 (en) 2018-09-18 2022-02-08 Samsung Electronics Co., Ltd. Semiconductor package system
US11600607B2 (en) 2019-01-17 2023-03-07 Samsung Electronics Co., Ltd. Semiconductor module including multiple power management semiconductor packages
WO2024024066A1 (fr) * 2022-07-28 2024-02-01 日立Astemo株式会社 Dispositif de conversion de puissance

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