WO1999004060A1 - Procede et appareil d'administration de fluide - Google Patents

Procede et appareil d'administration de fluide Download PDF

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Publication number
WO1999004060A1
WO1999004060A1 PCT/US1998/014525 US9814525W WO9904060A1 WO 1999004060 A1 WO1999004060 A1 WO 1999004060A1 US 9814525 W US9814525 W US 9814525W WO 9904060 A1 WO9904060 A1 WO 9904060A1
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WO
WIPO (PCT)
Prior art keywords
liquid
vessel
barrier member
delivery apparatus
pressure
Prior art date
Application number
PCT/US1998/014525
Other languages
English (en)
Inventor
Edward A. Sturm
Original Assignee
Advanced Technology Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Priority to AU84016/98A priority Critical patent/AU8401698A/en
Priority to EP98934511A priority patent/EP1021588A4/fr
Publication of WO1999004060A1 publication Critical patent/WO1999004060A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Definitions

  • This invention relates to delivering a fluid to a downstream process and, more particularly, to delivering a fluid to a vapor deposition process.
  • the fluid delivery may be carried out by a liquid delivery system in which a liquid precursor is flash vaporized and the resulting vapor is transported to the deposition site.
  • a wide variety of source materials have been employed. These source materials include reagents and precursor materials of widely varying types, and in various physical states.
  • vapor phase deposition has been used widely as a technique.
  • the source material may be of initially solid form which is sublimed or melted and vaporized to provide a desirable vapor phase source reagent.
  • the reagent may be of normally liquid state, which is vaporized, or the reagent may be in the vapor phase in the first instance.
  • reagents In the manufacture of advanced thin film materials, a variety of reagents may be used. These reagents may be used in mixture with one another in a multicomponent fluid which is utilized to deposit a corresponding multicomponent or heterogeneous film material.
  • Such advanced thin film materials are increasingly important in the manufacture of microelectronic devices and in the emerging field of nanotechnology. For such applications and their implementation in high volume commercial manufacturing processes, it is essential that the film morphology, composition, and stoichiometry be closely controllable. This in turn requires highly reliable and efficient means and methods for delivery of source reagents to the locus of film formation.
  • refractory materials such as high temperature superconducting (HTSC) materials including YBa2Cu3 ⁇ x , wherein x is from about 6 to 7.3, BiSrCaCuO, and TIBaCaCuO.
  • HTSC high temperature superconducting
  • Barium titanate, BaTi ⁇ 3, and barium strontium titanate, Ba x Srj. x TiO3, have been identified as ferroelectric and photonic materials with unique and potentially very useful properties in thin film applications of such materials.
  • Ba x Sr ⁇ -x Nb2 ⁇ 6 is a photonic material whose index of refraction changes as a function of electric field and also as a function of the intensity of light upon it.
  • Lead zirconate titanate, PbZr ⁇ -x Ti x ⁇ 3, is a ferroelectric material whose properties are very interesting.
  • the Group LI metal fluorides, BaF2, CaF2, and SrF2 are useful for scintillation detecting and coating of optical fibers.
  • Refractory oxides such as Ta2 ⁇ s are coming into expanded use in the microelectronics industry; Ta2 ⁇ s is envisioned as a thin-film capacitor material whose use may enable higher density memory devices to be fabricated.
  • Thin films comprising the Group LI metal fluorides, BaF 2 , CaF 2 , and SrF 2 , are potentially very useful as buffer layers for interfacing between silicon substrates and HTSC or GaAs overlayers or between GaAs substrates and HTSC or silicon overlayers, and combinations of two or all of such metal fluorides may be employed in forming graded compositions in interlayers providing close lattice matching at the interfaces with the substrate and overlayer constituents of the composite.
  • a silicon substrate could be coated with an epitaxial layer of BaF 2 /CaF 2 , SrF 2 /CaF 2 , or SrF 2 /CaF 2 /BaF 2 , whose composition is tailored for a close lattice match to the silicon. If the ratio of the respective Group ⁇ metal species in the metal fluoride interlayers can be controlled precisely in the growth of the interlayer, the lattice constant could be graded to approach the lattice constant of GaAs. Thus, a gallium arsenide epitaxial layer could be grown over the metal fluoride interlayer, allowing the production of integrated GaAs devices on widely available, high quality silicon substrates.
  • metal fluoride interlayers would be as buffers between silicon substrates and polycrystalline HTSC films for applications such as non-equilibrium infrared detectors. Such an interlayer would permit the HTSC to be used in monolithic integrated circuits on silicon substrates.
  • BaTiO 3 and Ba x Sr 1 . x Nb 2 O 6 in film or epitaxial layer form are useful in photonic applications such as optical switching, holographic memory storage, and sensors.
  • the BaTiO 3 or Ba x Sr 1 . x Nb 2 O 6 film is the active element.
  • the related ferroelectric material PhZr ⁇ Ti x Os is potentially useful in infrared detectors and thin film capacitors well as filters and phase shifters.
  • Chemical vapor deposition is a particularly attractive method for forming thin film materials of the aforementioned types, because it is readily scaled up to production runs and because the electronic industry has a wide experience and an established equipment base in the use of CVD technology which can be applied to new CVD processes.
  • CVD chemical vapor deposition
  • the control of key variables such as stoichiometry and film thickness, and the coating of a wide variety of substrate geometries is possible with CVD.
  • Forming the thin films by CVD permits the integration of these materials into existing device production technologies.
  • CVD also permits the formation of layers of the refractory materials that are epitaxially related to substrates having close crystal structures.
  • the element source reagents i.e., the precursor compounds and complexes containing the elements or components of interest must be sufficiently volatile to permit gas phase transport into the chemical vapor deposition reactor.
  • the elemental component source reagent must decompose in the CVD reactor to deposit only the desired element at the desired growth temperatures. Premature gas phase reactions leading to paniculate formation must not occur, nor should the source reagent decompose in the lines before reaching the reactor deposition chamber.
  • obtaining optimal properties requires close control of stoichiometry which can be achieved if the reagent can be delivered into the reactor in a controllable fashion. In this respect the reagents must not be so chemically stable that they are non-reactive in the deposition chamber.
  • Desirable CVD reagents therefore are fairly reactive and volatile. Unfortunately, for many of the refractive materials described above, volatile reagents do not exist. Many potentially highly useful refractory materials have in common that one or more of their components are elements, i.e., the Group LI metals barium, calcium, or strontium, or the early transition metals zirconium or hafnium, for which no or few volatile compounds well-suited for CVD are known.
  • the source reagents are solids whose sublimation temperature may be very close to the decomposition temperature, in which case the reagent may begin to decompose in the lines before reaching the reactor, and it therefore is very difficult to control the stoichiometry of the deposited films from such decomposition - susceptible reagents.
  • the film being deposited by CVD is a multicomponent substance rather than a pure element, such as barium titanate or the oxide superconductors
  • controlling the stoichiometry of the film is critical to obtaining the desired film properties.
  • the controlled delivery of known proportions of the source reagents into the CVD reactor chamber is essential.
  • the CVD reagents are liquids, but their delivery into the CVD reactor in the vapor phase has proven difficult because of problems of premature decomposition or stoichiometry control.
  • Examples include the deposition of tantalum oxide from the liquid source tantalum ethoxide and the deposition of titanium nitride from bis(dialkylamide)titanium reagents.
  • source reagent liquid delivery systems present distinct advantages over conventional techniques, there is often some fraction of the precursor compound that decomposes into very low volatility compounds that remain at the vaporization zone. This deficiency is an important issue in the operation of CVD processes that use thermally unstable solid source precursors which undergo significant decomposition at conditions needed for sublimation. Such decomposition can occur in all reagent delivery systems that involve a vaporization step, including flash vaporizer liquid delivery systems as well as more conventional reagent delivery systems that include bubblers and heated vessels operated without carrier gas.
  • optimization of the conditions used in the vaporizer of reagent delivery systems can minimize the fraction of the delivered precursor that decomposes (and remains) at the vaporization zone, but virtually all solid and liquid precursors undergo some decomposition when they are heated for conversion to the gas phase, although this fraction is negligibly small in "well-behaved" compounds.
  • Use of precursors that tend to decompose near their vaporization temperature may be mandated by availability (i.e., where the selected precursor possesses the best properties of available choices) or by economics, where precursor cost is strongly dependent on the complexity of its synthesis.
  • CVD precursors often contain impurities, and the presence of those impurities can cause undesirable thermally activated chemical reactions at the vaporization zone, also resulting in formation of involatile solids and liquids at that location.
  • CVD precursors such as tantalum pentaethoxide
  • a variety of CVD precursors are water-sensitive and hydrolysis can occur at the heated vaporizer zone forming tantalum oxide particulates that may be incorporated into the growing tantalum oxide film with deleterious effects.
  • One area in which improvement is sought relates to the motive means used to deliver liquid reagents from a storage reservoir to the vaporizer of the deposition system.
  • positive displacement pumps have been employed in prior art liquid delivery and vaporization systems, they have attendant disadvantages which limit their utility. These deficiencies include inadequate durability and reliability, and the susceptibility of the reagents transported under the impetus of such systems to deleteriously interact with the environment.
  • the positive displacement pump is expensive to repair or replace, and consumes a disproportionate portion of the time spent on technical service in the maintenance of the system. Its unsuitability in the reagent transport application relates to the fact that the positive displacement pump was never designed to run continuously for long periods of time, particularly in the movement of air-sensitive chemistries.
  • the pumping action of the pump is dependent on the movement of pistons between the surrounding environment and the reagent liquid, through high density polyethylene seals. These seals are made to fit in a physically tight manner to the piston surface, but such arrangement inherently cannot provide an ultra-high integrity seal. Inevitably, some amount of the reagent adheres to the piston surface and is transported through the seals to the outside environment. Likewise, some of the outside environment is carried back through the seals to the chemical reagent environment.
  • Positive displacement pumps have several advantages when used to deliver fluids to downstream processes such as vapor deposition systems. This type of pump creates turbulent flow patterns which help in mixing multi -component fluid streams.
  • a positive displacement pump has a rapid start-up to full flow rate time.
  • Positive displacement pumps have a reliable flow rate set point, and the flow rate set point to actual flow rate is linear. This linearity is important for calibration and repeatability.
  • Characteristics of the positive displacement pump which limit its usefulness, apart from the questionable seal integrity discussed above, include: the lack of output for feedback to the user verifying flow and flow rate; moving parts in contact with the reagent which could lead to contamination and particle generation (always an issue for microdevice fabrication, electronic thin film production, and semiconductor processing); the limited range of achievable flow rates (making transitions from research to commercial implementation less than straightforward); pulsing of flow and pressure due to piston movement (necessitating the use of a pulse damper and even then resulting in some non-uniformity at very low flow rates); and perhaps less than optimal accuracy of flow control (e.g., at levels on the order of + 3% versus + 1 to 2% claimed by other flow control devices).
  • the positive displacement pump system is also considered somewhat complicated by users (even in the research environment where it is most commonly used), has a mean time to repair (MTR) which is too short for practical use in the semiconductor industry, and is difficult to repair or adjust. Such characteristics thus pose a significant barrier to the widespread commercial use of liquid delivery and vaporization systems for applications such as CVD.
  • MTR mean time to repair
  • the performance of positive displacement pumps can suffer under prolonged periods of continuous operation.
  • the seal around the piston of a positive displacement pump can allow the pumped fluid to escape, and the seal can allow contaminants to be introduced into the pumped fluid. If the pumped fluid is hostile, the piston can deteriorate. Since the pump piston oscillates, fluid pressure can fluctuate and decrease fluid flow precision.
  • the above contamination concerns are acute in vapor deposition systems.
  • the controlled delivery of known proportions of the source reagents into a chemical vapor deposition (CVD) reactor chamber is essential. Some amount of reagent adheres to the piston surface and is transported past the seal into the outside environment. Materials from the outside environment are, likewise, carried back through the seals and into the chemistry environment. This contaminating effect can cause particulates to form within the chamber and can alter the stoichiometry of the resulting film. Purging can be used to compensate for this contaminating effect, however, purged mechanical pumps are less than satisfactory for long term use with air- and moisture-reactive reagents.
  • Positive displacement pumps present several other problems when used in CVD systems. Mechanical pumps lack an output feedback for verifying flow and flow rate. The particles generated by contamination present problems when fabricating microdevices, producing thin films, and processing semiconductors. Positive displacement pumps also have a limited range of achievable flow rates which creates an undesirable transition from a research environment to a production environment. The fluctuating flow due to the movement of the piston disrupts very low flow rates, even if a pulse damper is used. The flow control accuracy of a positive displacement pump is less than optimal, and a pump-based delivery system is considered complicated to operate and difficult to repair and adjust.
  • the aforementioned problems are resolved by a fluid delivery apparatus and method for metering and delivering a fluid to a downstream process.
  • the fluid delivery apparatus includes a vessel containing a fluid to be dispensed and a barrier member, wherein the barrier member is translatable against the liquid.
  • a method for metering and delivering a fluid to a downstream process includes confining the fluid in a vessel having a barrier member and selectively imposing a force on the barrier member to cause the fluid to flow from the vessel.
  • the present invention relates to a liquid source assembly, including a vessel holding the liquid to be dispensed, a barrier containment member for the liquid to be delivered, such as a diaphragm or bladder in the vessel, which is interposed as a barrier between a pressurizing gas and the liquid to be transported, and which is translatable against the liquid in the vessel equipped with the barrier containment member.
  • a barrier containment member for the liquid to be delivered such as a diaphragm or bladder in the vessel, which is interposed as a barrier between a pressurizing gas and the liquid to be transported, and which is translatable against the liquid in the vessel equipped with the barrier containment member.
  • the present invention relates to a method of delivering a liquid to a downstream locus from a vessel in which the liquid is held, comprising confining the liquid with a barrier containment member, such as a diaphragm or bladder, which is interposed as a barrier between the pressurizing gas and the liquid to be transported, and selectively imposing a force on the barrier containment member causing the liquid to be flowed from the vessel.
  • a barrier containment member such as a diaphragm or bladder
  • the vessel thus is equipped with a liquid outlet, and may be arranged for batch on- demand delivery of the liquid, wherein a volume of liquid in the vessel is used to exhaustion of the vessel, without replenishment of the liquid thereof, or the vessel may be arranged in supply relationship to a source of such liquid such as a reservoir which feeds liquid to the vessel, e.g., in response to a demand sensing means provided in or associated with the vessel.
  • the liquid in the vessel confined by the barrier containment member is protected by the barrier containment member from interaction of the contained liquid with environmental gases.
  • the barrier containment member comprises a bladder containing the liquid
  • air or other suitable gas may be employed to compressively exert a force on the bladder to cause expression of liquid from the interior volume of the bladder.
  • a bladder or bellows may be employed as the barrier containment member and could be compressed by mechanical means, if such means are capable of the translation characteristics, e.g., smooth motion, necessary to maintain consistent flow (or consistent pressure to a second control device such as a liquid mass flow controller associated therewith).
  • Figure 1 is a cross sectional view of a fluid delivery apparatus according to a first embodiment of the invention illustrating a compressed gas bellows.
  • Figures 2A and 2B are cross sectional views of a fluid delivery apparatus according to a second embodiment of the invention illustrating a plunger moved by gas pressure.
  • Figure 3 is a cross sectional view of a fluid delivery apparatus according to a third embodiment of the invention illustrating a compressible bladder compressed by gas pressure.
  • Figure 4 is a cross sectional view of a fluid delivery apparatus according to a fourth embodiment of the invention illustrating a compressible bladder compressed by mechanical force.
  • Figure 5 is a cross sectional view of a fluid delivery apparatus according to a fifth embodiment of the invention illustrating a plunger moved by mechanical force and having a dampening spring.
  • Figures 6A and 6B are cross sectional views of a fluid delivery apparatus according to the first embodiment of the invention illustrating a flexible diaphragm.
  • Figure 7 is a schematic representation of a fluid delivery and vaporization system utilizing the fluid delivery apparatus and method of the present invention.
  • FIG. 1 is a cross sectional view of a fluid delivery apparatus according to a first embodiment of the invention illustrating a compressed gas bellows.
  • an expandable bellows structure 10 is placed at one end of a vessel 12 containing the fluid 14 to be delivered.
  • An interior volume 11 of the vessel is defined by the vessel side walls and floor.
  • Bellows 10 is separated from the fluid 14 by movable plunger 16.
  • the plunger forces the fluid 14 out of the vessel and through a discharge outlet 18.
  • the vessel 12 may be constructed having a cylindrical, rectangular, or other suitable design.
  • a pressurizing means may be included for exerting pressure on the fluid in conjunction with the barrier member.
  • the expandable bellows may be replaced by a durable, inflatable bladder acting in a similar fashion.
  • Figure 2A shows the fluid 14 placed in a lower portion of vessel 12 below movable plunger 16. Pressure is introduced directly into an upper chamber of the vessel.
  • Figure 2B shows the plunger 16 moving due to the pressure in the upper chamber. The plunger 16 compresses fluid 14. The fluid flows out of the vessel through discharge outlet 18.
  • Figure 3 shows the fluid 14 placed in a compressible bladder 20 within a lower portion of the vessel 12. This embodiment does not include a moveable plunger. Pressure is introduced into the upper chamber. The bladder 20 containing fluid 14 is compressed and the fluid is forced to flow through discharge outlet 18.
  • a resilient connector 24, such as a compression spring, is used to attach upper plate 26 to plunger 16.
  • Resilient connector 24 provides linear control of the force applied to plunger 16 and allows a more constant pressure to be applied to fluid 14 thereby achieving a more regulated flow.
  • Figures 6A and 6B show the fluid 14 placed in the lower portion of vessel 12 below immovable diaphragm 16.
  • the diaphragm is attached to an inner surface or seated between two chambers which comprise the vessel 12 about a perimeter of the vessel to form a seal with the vessel. Pressure is introduced into the upper chamber of vessel 12.
  • Figure 6B shows the diaphragm expanded under the pressure of the upper chamber. The expanded diaphragm compresses fluid 14 which then flows through discharge outlet 18.
  • the device may also include an optional flow regulator to meter the fluid at a desired rate independent of the compression of the fluid vessel.
  • Any gas such as compressed air or a compressed inert gas, can be used to pressurize the vessel. Since the pressurized gas is separated from the fluid by an impermeable barrier member, gas entrainment and solubilization is avoided. This helps avoid flow irregularity issues due to gas bubbles and prevents reaction of the fluid with the pressurization environment.
  • the compressed gas source would then include the necessary controls to maintain consistent gas pressure.
  • Figure 7 is one embodiment of a fluid delivery and vaporization system 100 utilizing the fluid delivery apparatus and method of the present invention.
  • the fluid delivery apparatus is a ⁇ anged in fluid flow relationship upstream of a flow metering device and a vaporizer and is connected to a refill reservoir via controllable valves. Such arrangement enables constant delivery and refill in a cyclical process.
  • the fluid delivery apparatus 110 is shown, in this embodiment, with a bladder 120. If a vacuum is applied through the first three-way valve 125, the bladder 120 will contract due to the reduced pressure on the bladder backside. As the bladder contracts, liquid 114 is drawn from refill reservoir 140, through second three-way valve 130, and into vessel 112. The vacuum can then be removed and the apparatus is primed for operation and fluid delivery.
  • the fluid delivery apparatus is operated cyclically during a delivery stage of operation.
  • Pressurized gas or fluid may be applied to the bladder via first three-way valve 125.
  • the expanding bladder forces liquid 114 from the vessel 112 through second three-way valve 130.
  • a flow control meter/device 135 regulates the flow of liquid 114 into vaporizer 140.
  • the vaporization may be carried out "neat” or the vaporizer may also receive a carrier gas in which the vaporized reagent or other source liquid is entrained for flow to the deposition reactor.
  • the carrier gas when employed, may be introduced through the inert carrier gas inlet as shown.
  • the delivery reservoir 110 may be designed with a fluid volume larger than the fluid needed for a single processing run; no cycling is, therefore, required during a process run.
  • Vessel 112 may also include a pressure monitoring means 145 for monitoring the pressure exerted by the pressurizing gas on liquid 114 in conjunction with bladder 120.
  • the fluid delivery system as shown in Figure 7 has several advantages.
  • the system shown allows liquid refilling without disassembling the system. This reduces the potential for introducing contamination into the system.
  • a large refill reservoir 140 will permit several processing runs and/or operations before changing the refill reservoir.
  • the system shown is also adaptable to flexible manufacturing.
  • the bladder also prevents gas entrainment in the fluid to be delivered prior to entering the vaporizer. Since the delivered fluid is gas and bubble free, the apparatus permits greater accuracy in fluid flow metering.
  • the fluid delivery apparatus and method of the invention are usefully employed for delivering source reagents and precursor materials for thin film deposition of materials for manufacture of microelectronic devices.
  • Thin film materials usefully deposited using the fluid delivery systems of the invention include high temperature superconducting materials, ferroelectric and photonic materials, scintillation detection coatings and other optical fiber coatings, and capacitor materials for high density memory devices, as well as buffer layer and interlayer compositions useful in microelectronic device architectures.
  • the fluid delivery systems of the invention are usefully employed with chemical vapor deposition to form the aforementioned thin film materials.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé et un appareil de d'administration de fluide destinés à doser et à administrer un fluide à un processus en aval. L'appareil d'administration de fluide comprend un récipient (12) contenant un fluide à distribuer et une membrane barrière (16) laquelle barrière est déplacée contre le liquide (14). Un procédé de dosage et d'administration d'un fluide à un processus en aval consiste à confiner le fluide dans un récipient (12) présentant une membrane barrière (16) et à imposer, de manière sélective, une force sur ladite membrane barrière (16) de façon à amener le liquide à s'écouler à partir du récipient (12).
PCT/US1998/014525 1997-07-14 1998-07-14 Procede et appareil d'administration de fluide WO1999004060A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU84016/98A AU8401698A (en) 1997-07-14 1998-07-14 Fluid delivery apparatus and method
EP98934511A EP1021588A4 (fr) 1997-07-14 1998-07-14 Procede et appareil d'administration de fluide

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5244297P 1997-07-14 1997-07-14
US60/052,442 1997-07-14

Publications (1)

Publication Number Publication Date
WO1999004060A1 true WO1999004060A1 (fr) 1999-01-28

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Application Number Title Priority Date Filing Date
PCT/US1998/014525 WO1999004060A1 (fr) 1997-07-14 1998-07-14 Procede et appareil d'administration de fluide

Country Status (3)

Country Link
EP (1) EP1021588A4 (fr)
AU (1) AU8401698A (fr)
WO (1) WO1999004060A1 (fr)

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Publication number Priority date Publication date Assignee Title
WO2005028702A2 (fr) * 2003-09-15 2005-03-31 Intel Corporation Systeme de distribution de precurseur
EP1879829A2 (fr) * 2005-04-25 2008-01-23 Advanced Technology Materials, Inc. Systemes de stockage et de distribution de liquides, a base de revetement interieur, aptes a detecter un niveau vide
US9079758B2 (en) 2005-06-06 2015-07-14 Advanced Technology Materials, Inc. Fluid storage and dispensing systems and processes

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Cited By (10)

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WO2005028702A2 (fr) * 2003-09-15 2005-03-31 Intel Corporation Systeme de distribution de precurseur
WO2005028702A3 (fr) * 2003-09-15 2005-05-06 Intel Corp Systeme de distribution de precurseur
KR100854140B1 (ko) * 2003-09-15 2008-08-26 인텔 코포레이션 반도체 처리 시스템, 반도체 처리 방법 및 화학적 전달 시스템
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EP1021588A1 (fr) 2000-07-26
AU8401698A (en) 1999-02-10
EP1021588A4 (fr) 2002-11-06

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