WO1999001892A2 - Captured-cell solder printing and reflow methods and apparatuses - Google Patents
Captured-cell solder printing and reflow methods and apparatuses Download PDFInfo
- Publication number
- WO1999001892A2 WO1999001892A2 PCT/US1998/013698 US9813698W WO9901892A2 WO 1999001892 A2 WO1999001892 A2 WO 1999001892A2 US 9813698 W US9813698 W US 9813698W WO 9901892 A2 WO9901892 A2 WO 9901892A2
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- WIPO (PCT)
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- stencil
- die
- substrate
- solder
- temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0613—Square or rectangular array
- H01L2224/06131—Square or rectangular array being uniform, i.e. having a uniform pitch across the array
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0278—Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/043—Reflowing of solder coated conductors, not during connection of components, e.g. reflowing solder paste
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0557—Non-printed masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
Definitions
- the present invention relates to methods of forming solder bumps on integrated circuit chips (and other similar circuitizcd units) and apparatuses ilieie ⁇ ie, and particularly relates to forming very small solder bumps with small pitch separation and wi ⁇ i high aspect ratios.
- flip-chip bonding techniques have been increasingly used IO meet the ever increasing interconnect densities between chip and module substrates.
- the two components ate then heated to reflow the solder bumps, thereby making the connections between the two components.
- the evaporation tcclmique only achieves moderate densities and moderate solder-bump sizes because of the dicrinal mis-match between the evaporation mask and the substrate.
- die electroplating technique is used.
- the substrate surface is covered with a electroplating seed layer, then masked with a photoresist, which is dicn pattern exposed and developed to form an electroplating mold over each substrate pad, with the seed layer exposed at die bottom of each mold.
- the seed layer is then electroplated to Till the molds, and the photoresist and the seed layer arc dicreaftcr stripped widi separate chemical etchants.
- Noncdielcss, diis tccluiiquc provides the highest bump density and the smallest bump size.
- the stenciling technique is the least expensive and requires the least amount of capital expenditure.
- a stencil having apertures dicrcin is placed over die substrate with die apertures overlying corresponding pads of the substrate.
- an amount of solder paste is dispensed onto the stencil, and a screening blade (sometimes called “doctor blade") is moved across die stencil surface in such a manner as to force paste into die stencil apertures.
- the stencil is then removed, which leaves behind bodies of solder paste on the pads, and die bodies are diereafter reflowed to form die solder bumps. This mediod requires little capital invesunent, and is comprised by a few quick and inexpensive steps.
- solder paste stencils have "hour-glass" shaped cross-sections with a constriction of die diameter in die middle aperture's length. The constriction causes a greater amount of paste to be removed.
- the present invention provides fast, low-cost, and n ⁇ n-capitai intensive methods and apparatuses for forming arrays of solder bumps at moderate to high densities.
- the methods according to the present invention comprise the steps of laying a screening stencil over the surface of the substrate and screen depositing solder paste material into the stencil's apertures.
- the stencil is placed in such a manner that each of its apertures is positioned over a substrate pad, upon which a solder bump is to be formed.
- a flat pressure plate is laid over the exposed top surface of the stencil, which creates a fully enclosed, or "captured", cell of solder paste within each stencil aperture.
- the substrate is heated to a temperature sufficient to reflow the solder paste material.
- the solder paste is pulled away (i.e., detached) from the stencil side walls and anchored to the substrate pad before the stencil is removed.
- the inventors have discovered diat die use of die pressure plate is essential in ensuring dial proper formation of die solder bumps at high densities. Without the pressure plate, the inventors have observed that solder flows out of the bottom of the stencil for small diameter apertures during reflow.
- the steps of keeping the stencil in place during reflow and of using the pressure plate are contrary to convention practice, wherein die stencil is removed before the heating step, and wherein die use of a pressure plate is unknown.
- die heating of die substrate is controlled so as to limit the rate of increase in temperature. This control of temperature enables a slow and orderly evolution of solvent and flux gases from the capture cells to occur.
- apparatuses comprise a heater stage up which the substrate is placed, one or more heater elements widiin the heater stage, a screening blade for screen depositing solder paste into a stencil, and a pressure plate positioned in an opposite confronting relationship to die surface of the heater stage.
- a temperature sensor is attached to cither die heater stage or die substrate, and a controller monitors the sensor temperature and controls the power to the heating elements of the heater stage so as to limit the rate of change of die substrate's temperature.
- the inventors have achieved smaller diameter solder bumps having higher aspect ratios (heightrwidth) than those achieved by die prior art screening technique.
- die stencil removes solder paste from die deposited solder body when the stencil is lifted away from the substrate, and the amount of solder paste so removed increases as die diameter of solder bump decreases.
- the thickness of die stencil is reduced to reduce the contact surface area between the solder-paste body and the stencil.
- the reduction in stencil diickness necessarily reduces die aspect ratio of die stencil aperture, thereby reducing die aspect ratio of die resulting solder bump.
- solder-bump aspect ratios of greater dian 1:4 (height: widdi).
- die present invention docs not have d ⁇ s limitation because the solder paste is detached from die stencil walls before die stencil is removed.
- the present invention can achieve aspect ratios of well above 1:4, and can readily achieve an aspect ratio close to 1:1.
- FIG. 1 shows a perspective view of an exemplary apparatus according to die present invention.
- FIG. 2 shows a cross-sectional view of an exemplary apparatus according to the present invention during the step of screening solder paste into the apertures of the stencil.
- FIG. 3 shows a cross-sectional view of an exemplary apparatus according to the present invention during the step of reflowiiig die solder paste with die stencil and pressure plate in place.
- FIG. 4 shows a cross-sectional view of an exemplary apparatus accordmg to die present invention after the reflow step.
- FIG. 5 is a timing diagram of exemplary temperature control curves.
- Printing apparatus 10 comprises a base heater stage 20 having a flat top surface 21 upon which a substrate (e.g., wafer) 5 is placed.
- Substrate 5 comprises a plurality of circuitizcd units 7, widi nine such units 7 being shown in FIG. 1.
- Each of circuitized units 7 comprises an array of pads 6.
- Solder bumps are to be formed on pads 6 by die apparatus and methods according to the present invention.
- Units 7 may comprise a MCM substrate, or may comprise an integrated circuit chip prior to being separated from wafer substrate 5.
- Printing apparatus 10 further comprises a stencil mask 40, which comprises a plurality of apertures which correspond to die pads 6 of substrate 5.
- the relative locations of apertures 46 within mask 40 correspond to the relative locations of pads 6 on substrate 5.
- stencil 40 is positioned directly on top of substrate 5, with apei lures 46 and pads 6 in corresponding relationship to one anodier, and soldering paste material is screened into apertures 46 using a screening blade, or doctor blade.
- Corresponding alignment marks may be placed on both die substrate 5 and stencil 40 to facilitate die alignment of apertures 46 to pads 6.
- the solder paste will then later be rcflowcd when healer stage 20 applies heat to substrate 5.
- Stencil 40 comprises a material, at least on its exposed surface, which does not substantially adhere to molten solder. Exemplary materials are stainless steel, molybdenum, and chrome plated materials.
- Apparatus 10 further comprises a pressure plate 50 positioned above stencil 40.
- a pressure plate 50 positioned above stencil 40.
- prcssuic plate 50 is used to apply pressure against stencil 40 during reflow of die solder paste material.
- the pressing surface of plate 50 comprises a material to which solder docs not easily adhere or wet to. Exemplary materials are glass, stainless steel, nickel oxide, and chromium oxide.
- plate 50 comprises a glass plate.
- FIG. 2 shows a cross-sectional view of heater stage 20 with substrate 5 placed on top surface 21.
- Stage 20 comprises one or more vacuum grooves 24 formed at die face of top surface 21, die vacuum grooves 24 being tied to a conuiion vacuum source, which may be brought to the top surface 21 by way of an aperture dir ⁇ ugh heater stage 20. A vacuum is applied dirough groove 24 to hold substrate 5 in place and against top surface 21.
- Heater stage 20 also comprises a plurality of healer windings 30 within die base of stage 20. Each heater winding 30 comprises a icsistivc wire wound about an insulating tube, or form, 32. The healer windings 30 raise the temperature of stage 20 in order to reflow the solder dial is to be disposed on die top surface of substrate 5.
- Heater stage 20 further comprises a tcmpcratuie sensor 25 which is disposed within a recess 22 at the top surface 21 of stage 20.
- the sensor 25 comprises electrical signal .wires 26 which are carried away from top surface 21 dirough a recess 23. Bodi recess 23 and electrical lines 26 arc shown by dashed lines, as they arc offset from the cross-sectional plane of FIG. 2.
- the output of sensor 25 i.s provided to a controller 80, which is shown in FIG. 1 , via lines 26. Controller 80 provides power to heater windings 30 dirough electrical lines 30' (shown in FIG. I ). As shown in FIG.
- stencil 40 is laid over the top surface of substrate 5, widi each stencil aperture 46 lying over a corresponding pad 6 of the substrate.
- An amount of solder paste 70 is disposed along one side of stencil 40, and dien a screening blade 60 is run across the surface of stencil 40 in such a maiuier that spreads solder paste material 70 into the stencil apertures 46.
- the solder paste 70 typically comprises ground particles of solder mixed with a fluidizing solvent and a flux.
- a wax may be added to die paste to improve the screening of the paste into the apertures.
- stencil 40 may be held in place by any of the number of stencil- holding techniques known to the art.
- stencil 40 may be held within a larger frame that is typically used to screen printed circuit boards and the like.
- Screening blade 60 is preferably formed of a resilient material, which allows its tip to conform to die non-pianarities diat may be inherent in substrate .
- plate 50 is brought against the top surface of stencil 40, with plate 50 preferably covering all of die filled apertures 46.
- Plate 50 preferably applies pressure of at least two pounds-per-squarc-inch (2 l'SI) upon stencil 40, and preferably between two pounds-per-square-inch (2 l'SI) and seven pounds-per-square-inch (7 PSI).
- Heater windings 30 of stage 20 arc then powered by controller 80 (shown in FIG.
- a fast rate of temperature rise for example, on the order of 200° C or more over one minute, can cause the evolving solvent and flux to generate gas pressure within die cell, which may in turn force solder particles to flow out of die bottom of die capturcd-cell.
- the temperature of substrate 5 reaches a point which is about 20 to 30° C above the reflow temperature of the solder, the temperature is held at that point, with plate 50 and stencil 40 in place, for approximately 15 to 30 seconds. Thereafter, die power to the heating windings is reduced such that the substrate temperature begins to fall.
- the substrate is cooled to approximately 60° C before the plate 50 and die stencil are removed.
- the substrate is cooled to a point which is between 80 and 95 percent of the melting point of die reflow solder (as measured in degrees Kelvin), at which time both the pressure plate and die stencil are lifted away from die substrate.
- die melting point is 456° K (Kelvin), which is 183° C (Celsius, which is the same as Centigrade), the 95% point is 433° K (160° C), and die 80% point is 365° K (92° C).
- FIG. 5 shows a timing diagram for die two exemplary substrate heating programs described above.
- the programs are designated as 510 and 520, and are diagramed in terms of temperature (in Celsius) as a function of time (in minutes).
- die melting point of the solder is 183° C
- die solder is to be reflowed at between 215° C and 220° C.
- Each of die programs starts at time zero with a temperature ramp rate of 67° C per minute over diree minutes, for a total rise of 200° C in three minutes.
- Program 520 has been offset slightly in time so as to better distinguish die two programs in time.
- a preferred maximum limiting rale of 100° C per minute is shown at 505.
- Controller 80 can readily implement eidier of programs 510 and 520 using the temperature sensed by sensor 25. In some cases, there may be a temperature difference between the location of sensor 25 and the top of the substrate surface, but such a temperamre difference can be measured by known techniques and an appropriate offset temperature can be provided to controller 80.
- the material of stencil 40 is chosen such that its coefficient of thermal expansion (CTE) is substantially close to .that of substrate 5, usually within 100% of diat of die substrate. This ensures diat there will be little mechanical stress created between die stencil and the solder bumps upon cooling after the reflow operation.
- the partial cooling embodiment described above enables die coefficients of thermal expansion (CTEs) to be substantially different, since die stencil is removed before cooling is completed, and before the system has undergone a large temperature change. This enables the benefit of being able to choose from a wider variety of materials for stencil 40.
- the partial cooling embodiment generates much less stress between the stencil and the solder bumps upon removing the stencil, which is very important when small feature-size solder bumps arc being formed.
- diat pressure plate 50 is essential in achieving small-sized solder bumps. Widiout plate 50, it has been observed that solder paste flows out dirough the bottom of the aperture 40 upon reflow. This ellcct docs not appear to occur for larger-sized apertures and solder bumps. This benefit pi ⁇ vided by pressure plate 50 is unexpected, since, upon first inspection, one of ordinary skill in die art would believe that the confinement provided by plate 50 would force a solder paste to flow out of die bottom of the aperture upon reflow, due to pressure buildup by the evolving solvent and flux gases. However, the inventors have found this not to occur with proper control of the applied heat and temperature to substrate 5.
- Pressure may be applied to pressure plate in a number of ways known to the art.
- weights may be placed onto the top surface of plate 50. Each such weight may have the shape of a round disk (or plate) widi an aperture formed in the center so as to fit around the shaft 51 of pressure plate 50.
- the pressure-pcr- squarc-inch applied by the weights can be computed by the weight of the weights in a straight forward manner well know to die art (i.e.. total weight divided by the surface area of substrate 5).
- a gas-filled piston assembly such as that often used hi chemical-mechanical polishing machines to press the sample against the polishing platen, may be coupled to die shaft 51 of pressure plate 50 to apply the desired amount of pressure.
- the pressure-per-square-inch applied by the piston assembly can be computed by die fluid pressure wiiliin die piston and the piston's head area, as is known in die art (i.e., fluid pressure times piston head area divided by substrate surface area).
- FIG. 4 shows die resulting solder bump structures after plate 50 and stencil 40 have been removed.
- solder bumps as small as 130 microns (0.13 mm) in diameter on a pitch of 200 microns (0.20 mm) can be manufactured. This compares very favorably to die prior art evaporation technique, where the smallest solder bump is 150 microns (0.15 mm) on a pitch of 300 microns (0.30 mm).
- Stencils with substantially vertical side walls arc currently available from several stencil manufacturers. These stencils can have diameters as small as 12.5 microns plus 1.5 times the diickness of the stencil. Stencils as diin as 100 microns are available, which enable a diameter as small as 162.5 microns. Since the solder paste widiin die stencil aperture slirinks upon reflow, a solder bump of around 130 microns can be formed with the 162.5 micron diameter aperture. Widi stencil thickness of 80 microns and less, apertures of 150 microns and less arc possible.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU82804/98A AU8280498A (en) | 1997-07-01 | 1998-07-01 | Captured-cell solder printing and reflow methods and apparatuses |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5139197P | 1997-07-01 | 1997-07-01 | |
US60/051,391 | 1997-07-01 |
Publications (1)
Publication Number | Publication Date |
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WO1999001892A2 true WO1999001892A2 (en) | 1999-01-14 |
Family
ID=21971017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/013698 WO1999001892A2 (en) | 1997-07-01 | 1998-07-01 | Captured-cell solder printing and reflow methods and apparatuses |
Country Status (2)
Country | Link |
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AU (1) | AU8280498A (en) |
WO (1) | WO1999001892A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1073111A2 (en) * | 1999-07-30 | 2001-01-31 | FUJI MACHINE Mfg. Co., Ltd. | Method and apparatus for forming a solder bump |
US6609652B2 (en) | 1997-05-27 | 2003-08-26 | Spheretek, Llc | Ball bumping substrates, particuarly wafers |
CN112378716A (en) * | 2020-09-30 | 2021-02-19 | 中国电子科技集团公司第十三研究所 | Sample preparation method for solderability test of CBGA device |
-
1998
- 1998-07-01 WO PCT/US1998/013698 patent/WO1999001892A2/en not_active Application Discontinuation
- 1998-07-01 AU AU82804/98A patent/AU8280498A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6609652B2 (en) | 1997-05-27 | 2003-08-26 | Spheretek, Llc | Ball bumping substrates, particuarly wafers |
EP1073111A2 (en) * | 1999-07-30 | 2001-01-31 | FUJI MACHINE Mfg. Co., Ltd. | Method and apparatus for forming a solder bump |
EP1073111A3 (en) * | 1999-07-30 | 2001-12-19 | FUJI MACHINE Mfg. Co., Ltd. | Method and apparatus for forming a solder bump |
CN112378716A (en) * | 2020-09-30 | 2021-02-19 | 中国电子科技集团公司第十三研究所 | Sample preparation method for solderability test of CBGA device |
Also Published As
Publication number | Publication date |
---|---|
AU8280498A (en) | 1999-01-25 |
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