WO1998043284A1 - Titanium metal treatment method, method of forming an electrically conductive interconnect, and method of reducing contact resistance of an elemental titanium contact - Google Patents
Titanium metal treatment method, method of forming an electrically conductive interconnect, and method of reducing contact resistance of an elemental titanium contact Download PDFInfo
- Publication number
- WO1998043284A1 WO1998043284A1 PCT/US1998/006170 US9806170W WO9843284A1 WO 1998043284 A1 WO1998043284 A1 WO 1998043284A1 US 9806170 W US9806170 W US 9806170W WO 9843284 A1 WO9843284 A1 WO 9843284A1
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- WO
- WIPO (PCT)
- Prior art keywords
- titanium
- nitrogen
- hydrogen
- mass
- plasma
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Abstract
In one aspect of the invention, a method of treating a titanium containing metal includes: a) forming a mass of titanium containing metal having an exposed outer surface; and b) subjecting the exposed outer surface of the titanium containing metal to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component. In another aspect of the invention, a method of forming an electrically conductive interconnect between an inner location and an outer location includes: a) providing a first node location to which electrical connection is to be made at a first inner location; b) forming a mass of titanium containing metal over and in electrical connection with the first node location, the titanium metal mass having an exposed outer surface; c) subjecting the exposed outer surface of the titanium metal mass to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component; and d) forming an electrically conductive circuit component outwardly of and in electrical connection with the plasma treated outer surface, the titanium metal mass being received intermediate the first node location and the electrically conductive circuit component. The invention has utility in reducing contact resistance of an elemental titanium containing contact by reducing electrical resistance in at least the outer portion of such contact.
Description
DESCRIPTION
TITANIUM METAL TREATMENT METHOD, METHOD OF FORMING AN
ELECTRICALLY CONDUCTIVE INTERCONNECT, AND METHOD OF
REDUCING CONTACT RESISTANCE OF AN ELEMENTAL TITANIUM CONTACT
Technical Field
This invention relates to titanium metal treatment methods, to methods of forming electrically conductive interconnects, and to methods of reducing contact resistance of elemental titanium containing contacts. Background Art
The invention primarily grew out of needs for making highly reliable, high density dynamic random access memory (DRAM) contacts. Advance semiconductor fabrication is employing increasing vertical circuit integration as designers continue to strive for circuit density maximization. Such typically includes multi-level metallization and interconnect schemes.
Electrical interconnect techniques typically require electrical connection between metal or other conductive layers, or regions, which are present at different elevations within the substrate . Such interconnecting is typically conducted, in part, by etching a contact opening through insulating material to the lower elevation of a layer or conductive region. The significant increase in density of memory cells and vertical integration places very stringent requirements for contact fabrication technology. The increase in circuit density has resulted in narrower and deeper electrical contact openings between layers within the substrate, something commonly referred to as increasing aspect ratio. Such currently ranges from 1.0 to 5, and is expected to increase. Further, the circuit density increase places increasing constraints on the conductivity of the contacts themselves.
One material useful in contact technology is titanium in either elemental or alloy form. Such can be deposited, for example, utilizing plasma enhanced low pressure chemical vapor deposition using TiC-4, Ar and H2 as precursor feed gases. Unfortunately, other undesired chlorides, nitrides and other materials can remain in the outer portion and on the outer surface of the titanium layer being formed. These contaminate species are undesirably more electrically resistive than elemental or alloy titanium, thus reducing the desired overall conductivity of the deposited film or contact being made .
It would be desirable to overcome these identified drawbacks in producing more reliable and high conductivity contacts. Brief Description of the Drawings
Preferred embodiments of the invention are described below with reference to the following accompanying drawings.
Fig. 1 is a diagrammatical sectional view of a semiconductor wafer fragment at one processing step in accordance with the invention.
Fig. 2 is a view of the Fig. 1 wafer at a processing step subsequent to that shown by Fig. 1. Fig. 3 is a view of the Fig. 1 wafer at a processing step subsequent to that shown by Fig. 2. Best Modes for Carrying Out the Invention and Disclosure of Invention
In one aspect of the invention, a method is provided for treating titanium containing metal. In one implementation, the invention includes forming a mass of titanium containing metal having an exposed outer surface . The outer surface is subjected to a plasma comprising hydrogen and nitrogen. The plasma is ideally substantially void of any separate titanium component.
In another aspect, the invention provides a method of forming an electrically conductive interconnect between an inner location and an outer location. In one implementation, the method is performed by providing a first node location to which electrical connection is to be made at some first inner location. A mass of titanium containing metal is formed over and in electrical connection with the first node location and has an exposed outer surface . The exposed outer surface of the titanium metal mass is exposed to a plasma comprising hydrogen and nitrogen. Ideally, the plasma is substantially void of any separate titanium component. An electrically conductive circuit component is formed outwardly of and in electrical connection with the plasma treated outer surface. The titanium metal mass is received intermediate the first node location and the electrically conductive circuit component. In still another aspect of the invention, a method of reducing contact resistance of an elemental titanium containing contact is disclosed. In a preferred implementation, elemental titanium is formed within a contact opening, with such having an outer portion and an inner portion. The outer portion typically has higher electrical resistance than the inner portion. The outer surface of the elemental titanium is treated with a plasma comprising hydrogen
and nitrogen for a time period sufficient to reduce electrical resistance in the outer portion.
A preferred embodiment of the invention as described with Figs. 1-3 where a semiconductor wafer fragment in process is indicate generally with reference numeral 10. Such comprises a bulk monocrystalline silicon semiconductor substrate 12 having a diffusion region 14 provided therein. Diffusion region 14 constitutes a first node location to which electrical connection is to be made utilizing a mass of titanium containing metal. An insulating dielectric layer 16, such as doped or undoped S ^, is provided outwardly of substrate 12. A contact opening 18 is provided therethrough to node location/diffusion region 14. A titanium comprising film or mass 20 is provided within contact opening 18. An inner barrier layer, glue layer, suicide, or other material layer might also be formed (not shown) intermediate titanium containing mass 20 and diffusion region 14, as will be appreciated by the artisan. The material received outwardly thereof preferably consists essentially of elemental titanium.
A preferred method by which plug 20 is provide is to initially place semiconductor substrate 10 within a suitable chemical vapor deposition reactor. TiC_4 is provided within the reactor under pressure and temperature conditions effective to deposit a titanium comprising film (preferably predominately elemental titanium) outwardly of substrate 12/16. Preferably, plasma and sub-atmospheric pressure conditions are utilized in combination with H an<^ Ar feed gases. Example and preferred conditions include a plasma power of greater than or equal to 200W, a temperature of at least about 300°C, and volumetric gas ratios of TiC_4/Ar/H2 of 1 :5:5. The deposited titanium material can then be planarized back by a suitable etch back or polishing process to produce the illustrated outer planar surface, with plugging material 20 having an outer exposed surface 22.
Thus, a titanium containing metal mass 20 is formed over and in electrical connection with first node location 14. In the example and illustrated embodiment, titanium containing mass or film 20 is provided directly on semiconductor substrate 12. Exposed outer surface 22 undesirable typically will comprise chlorine remnants from the TiCl^ feed gas, typically in the form of resistive chlorides. Elemental titanium mass 20 thus has an outer portion encompassing outer exposed surface 22 which typically has a higher electrical resistance than inner portions of titanium mass 20.
Referring to Fig. 2, exposed outer surface 22 of titanium containing metal mass or film 20 is exposed to a plasma comprising hydrogen and nitrogen, which is ideally void of any separate titanium component (i.e ., void of TiC^) . The exposure is for a period of time effective to substantially remove the outer surface chlorine and thus effectively reduce electrical resistance in the outer portion of mass 20. As shown, such treatment in the preferred embodiment effectively nitridizes the outermost portion of mass 20 such that a thin outer portion 24 is transformed into titanium nitride . An example and typical thickness for transformed outer portion 24 is 50 Angstroms or less. A preferred plasma treatment is to utilize hydrogen in the form of H2 gas and nitrogen the form of N2 gas at a volumetric feed ratio to the reactor of N to H2 of from about 2.25:1 to about 4:1. Subatmospheric pressure of from 1 Torr to 10 Torr and a temperature of greater than or equal to about 600° C are also preferred. An example RF plasma power is 250W for a single wafer reactor. Alternately or in addition thereto, the hydrogen and nitrogen provided for such treatment can be from a single molecular gas, such as NH3.
Attempts utilizing only a hydrogen source or only a nitrogen source without the other was discovered to not produce the desired operable effect of reducing contaminants in the titanium film layer surface and thus not result in an increase in conductance of the titanium film. It is theorized that merely using H2 plasma forms TiH on the film surface, which is an electrically resistive material. Just utilizing N2 plasma is theorized to not contend with the chlorine typically present from the deposition utilizing TiC^.
The above described process can also be utilized in an in situ method of forming a layer comprising an elemental titanium portion and a titanium nitride portion provided outwardly thereof. At the conclusion of the elemental or other titanium layer deposition utilizing TiCl^, and without breaking vacuum after deposition of such film, the feed of TiC^ to the reactor could be substantially ceased. Flow of a hydrogen source and a nitrogen source is provided to the reactor, preferably without breaking the plasma, to provide the above described treatment.
Referring to Fig. 3, a conductive metal or polysilicon layer can be deposited and patterned to produce the example illustrated electrically conductive circuit component in the form of a conductive line or runner 30. Such is provided outwardly of and in electrical connection with the plasma treated outer
surface 22. Titanium metal mass 20 is thereby received intermediate diffusion region 14 and electrically conductive circuit component 30.
Claims
1. A method of treating a titanium containing metal comprising: forming a mass of titanium containing metal having an exposed outer surface; and subjecting the exposed outer surface of the titanium containing metal to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component.
2. The method of treating titanium of claim 1 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H2 being fed to a reactor within which the mass is received at a volumetric ratio of N2 to H of from about 0.25:1 to about 4:1 , and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure.
3. The method of treating titanium of claim 1 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
4. The method of treating titanium of claim 1 wherein the hydrogen and the nitrogen are provided from NH3.
5. The method of treating titanium of claim 1 wherein the mass being treated consists essentially of elemental titanium.
6. A method of forming an electrically conductive interconnect between an inner location and an outer location comprising the following steps: providing a first node location to which electrical connection is to be made at a first inner location; forming a mass of titanium containing metal over and in electrical connection with the first node location, the titanium metal mass having an exposed outer surface; subjecting the exposed outer surface of the titanium metal mass to a plasma comprising hydrogen and nitrogen, the plasma being substantially void of any separate titanium component; and forming an electrically conductive circuit component outwardly of and in electrical connection with the plasma treated outer surface, the titanium metal mass being received intermediate the first node location and the electrically conductive circuit component.
7. The method of forming an electrically conductive interconnect of claim 6 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H being fed to a reactor within which the mass is received at a volumetric ratio of N2 to H2 of from about 0.25:1 to about 4:1 , and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure .
8. The method of forming an electrically conductive interconnect of claim 6 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
9. The method of forming an electrically conductive interconnect of claim 6 wherein the hydrogen and the nitrogen are provided from NH3.
10. The method of forming an electrically conductive interconnect of claim 6 wherein the mass subjected to the plasma consists essentially of elemental titanium.
11. A method of forming a mass comprising titanium outwardly of a semiconductor substrate comprising: placing a semiconductor substrate within a chemical vapor deposition reactor; providing TiCl^ within the reactor under pressure and temperature conditions effective to deposit a titanium comprising film outwardly of the substrate, the titanium comprising film having an exposed outer surface comprising chlorine; and subjecting the exposed outer surface of the film to a plasma comprising hydrogen and nitrogen for a period of time effective to substantially remove the outer surface chlorine, the plasma being substantially void of any separate titanium component.
12. The method of claim 11 wherein the titanium comprising film is provided on the semiconductor substrate .
13. The method of claim 11 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H2 being fed to the reactor at a volumetric ratio of N2 to H2 of from about 0.25:1 to about 4:1 , and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure .
14. The method of claim 11 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
15. The method of claim 11 wherein the hydrogen and the nitrogen are provided from NH3.
16. The method of claim 11 wherein the film being subjected to plasma consists essentially of elemental titanium.
17. A method of forming a layer comprising an elemental titanium portion and a titanium nitride portion provided outwardly thereof, the method comprising: forming a mass of elemental titanium metal; and nitridizing the mass of elemental titanium metal by exposing said mass to a plasma comprising hydrogen and nitrogen for a period of time effective to transform at least an outer portion of said titanium mass to titanium nitride.
18. The method of claim 17 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H2 being fed to a reactor within which the mass is received at a volumetric ratio of N2 to H2 of from about 0.25:1 to about 4:1, and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure .
19. The method of claim 17 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
20. The method of claim 17 wherein the hydrogen and the nitrogen are provided from NH3.
21. The method of claim 17 wherein the transformed outer portion has a thickness of no greater than about 50 Angstroms.
22. A in situ method of forming a layer comprising an" elemental titanium portion and a titanium nitride portion provided outwardly thereof, the method comprising: placing a semiconductor substrate within a chemical vapor deposition reactor; providing TiCL^ within the reactor under subatmospheric pressure, temperature, and plasma conditions effective to deposit an elemental film of titanium outwardly of the substrate; and without breaking vacuum after depositing the titanium film, substantially ceasing providing of TiCl^ to within the reactor and thereafter subjecting the titanium film to a plasma comprising hydrogen and nitrogen for a period of time effective to transform at least an outer portion of said titanium film to titanium nitride .
23. The method of claim 22 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H2 being fed to the reactor at a volumetric ratio of N2 to H2 of from about 0.25:1 to about 4:1 , and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure .
24. The method of claim 22 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
25. The method of claim 22 wherein the hydrogen and the nitrogen are provided from NH3.
26. The method of claim 22 wherein the transformed outer portion has a thickness of no greater than about 50 Angstroms.
27. A method of reducing contact resistance of an elemental titanium containing contact comprising: forming elemental titanium within a contact opening, the elemental titanium having an outer portion and an inner portion, the outer portion having higher electrical resistance than the inner portion; and treating an outer surface of the elemental titanium with a plasma comprising hydrogen and nitrogen for a time period sufficient to reduce electrical resistance in the outer portion.
28. The method of claim 27 wherein the hydrogen comprises H2 and the nitrogen comprises N2, with the N2 and H2 being fed to the reactor at a volumetric ratio of N2 to H2 of from about 0.25:1 to about 4:1 , and at reactor conditions of greater than or equal to about 600┬░C and at subatmospheric pressure .
29. The method of claim 27 wherein the hydrogen and the nitrogen are provided from a single molecular gas.
30. The method of claim 27 wherein the hydrogen and the nitrogen are provided from NH3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU67847/98A AU6784798A (en) | 1997-03-27 | 1998-03-27 | Titanium metal treatment method, method of forming an electrically conductive interconnect, and method of reducing contact resistance of an elemental titanium contact |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82736697A | 1997-03-27 | 1997-03-27 | |
| US08/827,366 | 1997-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998043284A1 true WO1998043284A1 (en) | 1998-10-01 |
Family
ID=25249036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1998/006170 WO1998043284A1 (en) | 1997-03-27 | 1998-03-27 | Titanium metal treatment method, method of forming an electrically conductive interconnect, and method of reducing contact resistance of an elemental titanium contact |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU6784798A (en) |
| WO (1) | WO1998043284A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999054522A1 (en) * | 1998-04-20 | 1999-10-28 | Tokyo Electron Arizona, Inc. | Method of passivating a cvd chamber |
| EP1172455A2 (en) * | 2000-07-12 | 2002-01-16 | Osaka Prefecture | Method of surface treatment of titanium metal |
| US7291229B2 (en) | 2000-07-12 | 2007-11-06 | Osaka Prefecture | Method of surface treatment of titanium metal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0631309A2 (en) * | 1993-06-28 | 1994-12-28 | Kawasaki Steel Corporation | Semiconductor device with contact structure and method of manufacturing the same |
| WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5567243A (en) * | 1994-06-03 | 1996-10-22 | Sony Corporation | Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
-
1998
- 1998-03-27 AU AU67847/98A patent/AU6784798A/en not_active Abandoned
- 1998-03-27 WO PCT/US1998/006170 patent/WO1998043284A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0631309A2 (en) * | 1993-06-28 | 1994-12-28 | Kawasaki Steel Corporation | Semiconductor device with contact structure and method of manufacturing the same |
| WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5567243A (en) * | 1994-06-03 | 1996-10-22 | Sony Corporation | Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
Non-Patent Citations (1)
| Title |
|---|
| SHIGERU MURAKAMI ET AL: "PLASMA-NITRIDATED TI CONTACT SYSTEM FOR VLSI INTERCONNECTIONS", PROCEEDINGS OF THE INTERNATIONAL VLSI MULTILEVEL INTERCONNECTION CONFERENCE, SANTA CLARA, 15 - 16 JUNE, 1987, no. CONF. 4, 15 June 1987 (1987-06-15), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 148 - 154, XP000010200 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999054522A1 (en) * | 1998-04-20 | 1999-10-28 | Tokyo Electron Arizona, Inc. | Method of passivating a cvd chamber |
| US6635569B1 (en) | 1998-04-20 | 2003-10-21 | Tokyo Electron Limited | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus |
| EP1172455A2 (en) * | 2000-07-12 | 2002-01-16 | Osaka Prefecture | Method of surface treatment of titanium metal |
| EP1172455A3 (en) * | 2000-07-12 | 2003-11-05 | Osaka Prefecture | Method of surface treatment of titanium metal |
| US7291229B2 (en) | 2000-07-12 | 2007-11-06 | Osaka Prefecture | Method of surface treatment of titanium metal |
Also Published As
| Publication number | Publication date |
|---|---|
| AU6784798A (en) | 1998-10-20 |
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