WO1998034280B1 - Dispositif a effet de champ a dissipation de charge - Google Patents

Dispositif a effet de champ a dissipation de charge

Info

Publication number
WO1998034280B1
WO1998034280B1 PCT/US1998/000129 US9800129W WO9834280B1 WO 1998034280 B1 WO1998034280 B1 WO 1998034280B1 US 9800129 W US9800129 W US 9800129W WO 9834280 B1 WO9834280 B1 WO 9834280B1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
charge
charge dissipation
dielectric layer
field emission
Prior art date
Application number
PCT/US1998/000129
Other languages
English (en)
Other versions
WO1998034280A1 (fr
Filing date
Publication date
Priority claimed from US08/794,559 external-priority patent/US5847407A/en
Application filed filed Critical
Priority to EP98901180A priority Critical patent/EP0901689A4/fr
Priority to KR1019980707932A priority patent/KR100301603B1/ko
Priority to JP52913098A priority patent/JP3999276B2/ja
Publication of WO1998034280A1 publication Critical patent/WO1998034280A1/fr
Publication of WO1998034280B1 publication Critical patent/WO1998034280B1/fr

Links

Abstract

L'invention porte sur un dispositif (200, 300, 400) à effet de champ à dissipation de charge comportant un substrat support (210, 310, 410), une cathode (215, 315, 415) formée sur le substrat, une couche diélectrique (240, 340, 440) formée sur la cathode (215, 315, 415), et comportant des puits émetteurs (260, 360, 460) et un puits de dissipation de charge (252, 352, 452, 453) exposant une surface de recueil de charges (248, 348, 448, 449) servant à purger les charges gazeuses positives produites pendant le fonctionnement du dispositif (200, 300, 400), un émetteur d'électrons (270, 370, 470) formé dans chacun des puits émetteurs (260, 360, 460), et une anode (280, 380, 480) distante de la couche diélectrique (240, 340, 440) et servant à recueillir les électrons émis par les émetteurs d'électrons (270, 370, 470).
PCT/US1998/000129 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge WO1998034280A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP98901180A EP0901689A4 (fr) 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge
KR1019980707932A KR100301603B1 (ko) 1997-02-03 1998-01-05 전하소모전계방출디바이스
JP52913098A JP3999276B2 (ja) 1997-02-03 1998-01-05 電荷散逸型電界放射デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/794,559 US5847407A (en) 1997-02-03 1997-02-03 Charge dissipation field emission device
US08/794,559 1997-02-03

Publications (2)

Publication Number Publication Date
WO1998034280A1 WO1998034280A1 (fr) 1998-08-06
WO1998034280B1 true WO1998034280B1 (fr) 1998-10-29

Family

ID=25162991

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/000129 WO1998034280A1 (fr) 1997-02-03 1998-01-05 Dispositif a effet de champ a dissipation de charge

Country Status (7)

Country Link
US (1) US5847407A (fr)
EP (1) EP0901689A4 (fr)
JP (1) JP3999276B2 (fr)
KR (1) KR100301603B1 (fr)
CN (1) CN1114955C (fr)
TW (1) TW385467B (fr)
WO (1) WO1998034280A1 (fr)

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AU2001275068A1 (en) * 2000-05-31 2001-12-11 Sri International Systems and methods employing micro-fabricated field emission devices to sense and control potential differences between a space object and its space plasma environment, to emit charge from a space object, and in use with an electrodynamic tether to adjust an orbit of an orbiting space object
US6653625B2 (en) * 2001-03-19 2003-11-25 Gyros Ab Microfluidic system (MS)
TW541561B (en) * 2001-06-29 2003-07-11 Au Optronics Corp Field emission display structure
US20050031082A1 (en) * 2001-07-24 2005-02-10 Haaga John R. X-ray dose control based on patient size
US7071603B2 (en) 2002-02-20 2006-07-04 Cdream Corporation Patterned seed layer suitable for electron-emitting device, and associated fabrication method
US7053538B1 (en) 2002-02-20 2006-05-30 Cdream Corporation Sectioned resistor layer for a carbon nanotube electron-emitting device
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
WO2005020267A1 (fr) * 2003-08-20 2005-03-03 Cdream Display Corporation Couche resistive en ilots de dispositif emetteur d'electrons a nanotubes de carbone, et procede de fabrication associe
ES2381110T3 (es) 2003-09-09 2012-05-23 Novo Nordisk Health Care Ag Polipéptidos de factor VII de coagulación
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
US20060066217A1 (en) * 2004-09-27 2006-03-30 Son Jong W Cathode structure for field emission device
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
US8629609B2 (en) * 2007-12-28 2014-01-14 Selex Sistemi Integrati S.P.A. High frequency triode-type field emission device and process for manufacturing the same
US8260174B2 (en) * 2008-06-30 2012-09-04 Xerox Corporation Micro-tip array as a charging device including a system of interconnected air flow channels
KR20130001931A (ko) * 2011-06-28 2013-01-07 삼성전자주식회사 전계방출패널
KR20130100630A (ko) 2012-03-02 2013-09-11 삼성전자주식회사 전자 방출 소자 및 이를 포함한 엑스선 발생 장치

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