WO1998034280B1 - Charge dissipation field emission device - Google Patents
Charge dissipation field emission deviceInfo
- Publication number
- WO1998034280B1 WO1998034280B1 PCT/US1998/000129 US9800129W WO9834280B1 WO 1998034280 B1 WO1998034280 B1 WO 1998034280B1 US 9800129 W US9800129 W US 9800129W WO 9834280 B1 WO9834280 B1 WO 9834280B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cathode
- charge
- charge dissipation
- dielectric layer
- field emission
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract 7
- 238000000605 extraction Methods 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 206010018987 Haemorrhage Diseases 0.000 abstract 1
- 230000000740 bleeding Effects 0.000 abstract 1
- 231100000319 bleeding Toxicity 0.000 abstract 1
Abstract
A charge dissipation field emission device (200, 300, 400) includes a supporting substrate (210, 310, 410), a cathode (215, 315, 415) formed thereon, a dielectric layer (240, 340, 440) formed on the cathode (215, 315, 415) and having emitter wells (260, 360, 460) and a charge dissipation well (252, 352, 452, 453) exposing a charge-collecting surface (248, 348, 448, 449); for bleeding off gaseous positive charge generated during the operation of the charge dissipation field emission device (200, 300, 400), an electron emitter (270, 370, 470) formed in each of the emitter wells (260, 360, 460), and an anode (280, 380, 480) spaced from the dielectric layer (240, 340, 440) for collecting electrons emitted by the electron emitters (270, 370, 470).
Claims
1. A charge dissipation field emission device (300) comprising: a supporting substrate (310) having a major surface; a cathode (315) disposed on the major surface of the supporting substrate (310) and having a charge-collecting surface (348); a dielectric layer (340) disposed on the cathode (315), the dielectric layer (340) defining an emitter well (360), the dielectric layer (340) and the charge-collecting surface (348) of the cathode (315) defining a charge dissipation well (352); an electron emitter (370) disposed in the emitter well (360); and an anode (380) spaced from the dielectric layer (340) to define an interspace region (365) therebetween, the charge dissipation well (352) being in communication with the interspace region (365).
2. A charge dissipation field emission device (200) comprising: a supporting substrate (210) having a major surface; a cathode (215) disposed on the major surface of the supporting substrate (210) and having a charge-collecting surface (248); a dielectric layer (240) disposed on the cathode (215), the dielectric layer (240) defining an emitter well (260), the dielectric layer (240) and the charge-collecting surface (248) of the cathode (215) defining a charge dissipation well (252); an electron emitter (270) disposed in the emitter well (260); a gate extraction electrode (250) electrically isolated from and proximate to the cathode (215) and the electron emitter (270) for effecting electron emission therefrom; and an anode (280) spaced from the gate extraction electrode (250) to define an interspace region (265) therebetween, the charge dissipation well (252) being in communication with the interspace region (265).
17
3. The charge dissipation field emission device (400) as claimed in claim 2, wherein the charge dissipation layer (490) is electrically isolated from the cathode (415).
4. The charge dissipation field emission device (400) as claimed in claim 2, wherein the charge dissipation layer (490) is electrically coupled to the cathode.
5. The charge dissipation field emission device (400) as claimed in claim 4, wherein the charge dissipation layer (490) is made from amorphous silicon.
6. The charge dissipation field emission device (400) as claimed in claim 4. wherein the charge dissipation layer (490) has a sheet resistance within a range of 109- 1012 Ohms/square.
7. A method for reducing charging within a field emission device (200, 300. 400) having a plurality of electron emitters (270, 370, 470), the method including the step of providing a charge-collecting surface (248, 348, 448, 449) proximate to the plurality of electron emitters (270, 370, 470) .
8. A method for reducing charging within a field emission device (200, 300) having a cathode (215, 315), an anode (280, 380), and an interspace region (265, 365) therebetween, the method including the step of providing communication between a portion of the cathode (215, 315) and the interspace region (265, 365).
18 9. The method for reducing charging within a field emission device
(200, 300) as claimed in claim 8, wherein the field emission device (200,
300) further includes a dielectric layer (240, 340) disposed on the cathode
(215, 315) and wherein the step of providing communication between a portion of the cathode (215, 315) and the interspace region (265, 365) includes the step of forming a charge dissipation well (252, 352) in the dielectric layer (240, 340) in registration with the portion of the cathode
(215, 315).
10. A method for reducing charging within a field emission device
(200, 300) comprising the steps of: providing a supporting substrate (210, 310) having a major surface; forming on the major surface of the supporting substrate (210, 310) a cathode (215, 315) having a charge-collecting surface (248, 348); forming a dielectric layer (240, 340) on the cathode (215, 315); forming in the dielectric layer (240, 340) an emitter well (260, 360); forming in the dielectric layer (240, 340) a charge dissipation well (252, 352) in registration with the charge-collecting surface (248, 348) of the cathode (215, 315); providing an electron emitter (270, 370) in the emitter well (260,
360); and providing an anode (280, 380) spaced from the dielectric layer (240, 340) to define an interspace region (265, 365) therebetween so that the charge dissipation well (252, 352) is in communication with the interspace region (265, 365).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980707932A KR100301603B1 (en) | 1997-02-03 | 1998-01-05 | Charge dissipation field emission device |
| EP98901180A EP0901689A4 (en) | 1997-02-03 | 1998-01-05 | Charge dissipation field emission device |
| JP52913098A JP3999276B2 (en) | 1997-02-03 | 1998-01-05 | Charge dissipation type field emission device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/794,559 | 1997-02-03 | ||
| US08/794,559 US5847407A (en) | 1997-02-03 | 1997-02-03 | Charge dissipation field emission device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1998034280A1 WO1998034280A1 (en) | 1998-08-06 |
| WO1998034280B1 true WO1998034280B1 (en) | 1998-10-29 |
Family
ID=25162991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1998/000129 WO1998034280A1 (en) | 1997-02-03 | 1998-01-05 | Charge dissipation field emission device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5847407A (en) |
| EP (1) | EP0901689A4 (en) |
| JP (1) | JP3999276B2 (en) |
| KR (1) | KR100301603B1 (en) |
| CN (1) | CN1114955C (en) |
| TW (1) | TW385467B (en) |
| WO (1) | WO1998034280A1 (en) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929560A (en) * | 1996-10-31 | 1999-07-27 | Motorola, Inc. | Field emission display having an ion shield |
| US6075323A (en) * | 1998-01-20 | 2000-06-13 | Motorola, Inc. | Method for reducing charge accumulation in a field emission display |
| FR2784225B1 (en) * | 1998-10-02 | 2001-03-09 | Commissariat Energie Atomique | SOURCE OF ELECTRONS WITH EMISSIVE CATHODES COMPRISING AT LEAST ONE ELECTRODE FOR PROTECTION AGAINST INTERFERENCE EMISSIONS |
| US6992698B1 (en) * | 1999-08-31 | 2006-01-31 | Micron Technology, Inc. | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
| US6905683B2 (en) * | 2000-05-03 | 2005-06-14 | Novo Nordisk Healthcare A/G | Human coagulation factor VII variants |
| US6459206B1 (en) | 2000-05-31 | 2002-10-01 | Sri International | System and method for adjusting the orbit of an orbiting space object using an electrodynamic tether and micro-fabricated field emission device |
| US6577130B1 (en) | 2000-05-31 | 2003-06-10 | Sri International | System and method for sensing and controlling potential differences between a space object and its space plasma environment using micro-fabricated field emission devices |
| AU2001275068A1 (en) * | 2000-05-31 | 2001-12-11 | Sri International | Systems and methods employing micro-fabricated field emission devices to sense and control potential differences between a space object and its space plasma environment, to emit charge from a space object, and in use with an electrodynamic tether to adjust an orbit of an orbiting space object |
| US6653625B2 (en) * | 2001-03-19 | 2003-11-25 | Gyros Ab | Microfluidic system (MS) |
| TW541561B (en) * | 2001-06-29 | 2003-07-11 | Au Optronics Corp | Field emission display structure |
| AU2002322653A1 (en) * | 2001-07-24 | 2003-02-17 | Case Western Reserve University | X-ray dose control based on patient size |
| US7071603B2 (en) | 2002-02-20 | 2006-07-04 | Cdream Corporation | Patterned seed layer suitable for electron-emitting device, and associated fabrication method |
| US7053538B1 (en) | 2002-02-20 | 2006-05-30 | Cdream Corporation | Sectioned resistor layer for a carbon nanotube electron-emitting device |
| US6803708B2 (en) * | 2002-08-22 | 2004-10-12 | Cdream Display Corporation | Barrier metal layer for a carbon nanotube flat panel display |
| AU2003304452A1 (en) * | 2003-08-20 | 2005-03-10 | Cdream Display Corporation | Patterned resistor layer suitable for a carbon nano-tube electron-emitting device, and associated fabrication method |
| CN101870729A (en) | 2003-09-09 | 2010-10-27 | 诺和诺德医疗保健公司 | Coagulation factor vii polypeptides |
| US20050236963A1 (en) * | 2004-04-15 | 2005-10-27 | Kang Sung G | Emitter structure with a protected gate electrode for an electron-emitting device |
| US20060066217A1 (en) * | 2004-09-27 | 2006-03-30 | Son Jong W | Cathode structure for field emission device |
| US8753974B2 (en) * | 2007-06-20 | 2014-06-17 | Micron Technology, Inc. | Charge dissipation of cavities |
| WO2009084054A1 (en) * | 2007-12-28 | 2009-07-09 | Selex Sistemi Integrati S.P.A. | High frequency triode-type field emission device and process for manufacturing the same |
| US8260174B2 (en) * | 2008-06-30 | 2012-09-04 | Xerox Corporation | Micro-tip array as a charging device including a system of interconnected air flow channels |
| KR20130001931A (en) * | 2011-06-28 | 2013-01-07 | 삼성전자주식회사 | Field emission panel |
| KR20130100630A (en) | 2012-03-02 | 2013-09-11 | 삼성전자주식회사 | Electron emission device and x-ray generator including the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4874981A (en) * | 1988-05-10 | 1989-10-17 | Sri International | Automatically focusing field emission electrode |
| US5063323A (en) * | 1990-07-16 | 1991-11-05 | Hughes Aircraft Company | Field emitter structure providing passageways for venting of outgassed materials from active electronic area |
| US5163328A (en) * | 1990-08-06 | 1992-11-17 | Colin Electronics Co., Ltd. | Miniature pressure sensor and pressure sensor arrays |
| US5329207A (en) * | 1992-05-13 | 1994-07-12 | Micron Technology, Inc. | Field emission structures produced on macro-grain polysilicon substrates |
| US5374868A (en) * | 1992-09-11 | 1994-12-20 | Micron Display Technology, Inc. | Method for formation of a trench accessible cold-cathode field emission device |
| FR2702869B1 (en) * | 1993-03-17 | 1995-04-21 | Commissariat Energie Atomique | Microtip display device and method of manufacturing the device. |
| JPH07111868B2 (en) * | 1993-04-13 | 1995-11-29 | 日本電気株式会社 | Field emission cold cathode device |
| US5559389A (en) * | 1993-09-08 | 1996-09-24 | Silicon Video Corporation | Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals |
| US5569975A (en) * | 1994-11-18 | 1996-10-29 | Texas Instruments Incorporated | Cluster arrangement of field emission microtips |
| US5635791A (en) * | 1995-08-24 | 1997-06-03 | Texas Instruments Incorporated | Field emission device with circular microtip array |
| US5693235A (en) * | 1995-12-04 | 1997-12-02 | Industrial Technology Research Institute | Methods for manufacturing cold cathode arrays |
| US5698942A (en) * | 1996-07-22 | 1997-12-16 | University Of North Carolina | Field emitter flat panel display device and method for operating same |
-
1997
- 1997-02-03 US US08/794,559 patent/US5847407A/en not_active Expired - Fee Related
-
1998
- 1998-01-05 EP EP98901180A patent/EP0901689A4/en not_active Withdrawn
- 1998-01-05 KR KR1019980707932A patent/KR100301603B1/en not_active IP Right Cessation
- 1998-01-05 WO PCT/US1998/000129 patent/WO1998034280A1/en not_active Application Discontinuation
- 1998-01-05 CN CN98800003A patent/CN1114955C/en not_active Expired - Fee Related
- 1998-01-05 JP JP52913098A patent/JP3999276B2/en not_active Expired - Fee Related
- 1998-01-13 TW TW087100387A patent/TW385467B/en not_active IP Right Cessation
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