WO1998029902A1 - Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures - Google Patents
Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures Download PDFInfo
- Publication number
- WO1998029902A1 WO1998029902A1 PCT/US1996/020669 US9620669W WO9829902A1 WO 1998029902 A1 WO1998029902 A1 WO 1998029902A1 US 9620669 W US9620669 W US 9620669W WO 9829902 A1 WO9829902 A1 WO 9829902A1
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- WO
- WIPO (PCT)
- Prior art keywords
- indium oxide
- layer
- resistance
- heating
- resistivity
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Definitions
- the present invention relates to semiconductor fabrication techniques, and more particularly, to a method for restoring the resistance of Indium Oxide semiconductors after heating in the presence of oxygen.
- Memory devices based on Indium Oxide semiconductors deposited on lead zirconate titanates are known to the prior art.
- PZT lead zirconate titanates
- U.S. Patent No. 5,070,385 describes a memory element comprising a layer of In 2 O3 deposited on a layer of PZT. Two contacts are provided on the In 2 O3 layer. Ifthe PZT is polarized in one direction, the resistance between these contacts will be substantially different than the resistance measured if the PZT is polarized in the opposite direction.
- Such memory devices often require an annealing step in which the device must be heated to temperatures in excess of 500°C after the In O 3 is deposited thereon.
- the resistance of the In 2 O3 layer increases dramatically during this annealing step. This increase in resistance renders the devices inoperative for many applications.
- Indium Tin Oxide cannot be used in place of In 2 O 3 on PZT if the PZT is to be heated to the above-described temperatures because the Tin diffuses out of the Indium Tin Oxide and alters the PZT.
- heating in the presence of oxygen or in vaccum affects the resistivity of the indium oxide film, since both of these operations alter the oxygen vacancies in the film.
- Heating in the presence of oxygen would be expected to decrease the oxygen vacancies by adding oxygen to the vacancies, and heating in a vacuum would be expected to increase the oxygen vacancies by allowing oxygen to escape from the film.
- the improvement in the resistance when the films are heated in vacuum is observed over a wide range of temperatures, the improvement increasing with temperature at least for temperatures up to 350°C.
- the object of the present invention to provide an improved method for using In 2 O 3 semiconductors in conjunction with oxygen containing ferroelectrics. It is a further object of the present invention to provide a method for lowering the resistance of an In 2 O 3 layer after exposure to high temperatures while maintaining the PZT and In 2 O3 layers sealed in dielectric.
- the present invention utilizes a recovery annealing step which returns the In 2 O 3 layer when deposited on PZT to its original resistivity after a high temperature annealing step has caused the resistivity to increase.
- the recovery anneal comprises heating the resistive layer to a temperature between 100°C and 300°C in the presence of oxygen for a period of time sufficient to cause the resistivity of the resistive layer to return to a predetermined value.
- Figure 1 is a cross-sectional view of a device that may be fabricated using the method of the present invention.
- FIG. 1 is a cross-section of a thin film ferroelectric transistor 10.
- Transistor 10 is constructed by depositing a bottom electrode 14 on a substrate 12.
- a PZT layer 16 is then deposited on bottom electrode 14.
- a semiconductor layer 18 is then deposited on PZT layer 16 and two contacts 20 and 21 provided on semiconductor layer 18.
- the electrical resistance of the circuit path between electrodes 20 and 21 is determined by the polarization of PZT layer 16.
- the polarization of the PZT layer is set by applying the appropriate potential difference between contacts 20 and 21 and bottom electrode 14. To complete an integrated circuit part, a number of additional steps are needed after the deposition of semiconductor layer 18.
- the inter- layer dielectric layer 24 must be deposited over the circuit and vias opened to allow metallic connections to be made to contacts 20 and 21. These metallic connections are shown at 26 and 28.
- This process includes annealing steps that require that the entire circuit be heated to temperatures in excess of 500°C. As noted above, this heating step causes the In 2 O3 layer's resistivity to increase dramatically, thereby rendering the parts inoperative. In fact, substantial increases in resistivity are observed if the devices are heated to a temperature in excess of 400°C.
- this increase in resistivity occurs even when the In 2 O3 is sealed under dielectric layer 24 which is preferrably TiO 2 . It should be noted that a TiO 2 layer is impermeable to oxygen. Hence, the observed increase in resistance has a mechanism that is likely to be different from that observed by Gupta, et al. Futhermore, since the In 2 O3 is sealed under dielectric layer 24, annealing in vacuum is not possible, since dielectric layer 24 prevents any oxygen from escaping from the In 2 O 3 layer.
- the resistivity of the In 2 O3 layer may be returned to its normal range if the structure is subjected to a second "recovery anneal" at 200°C after the high temperature annealing step described above.
- the parts are typically heated to 200°C for one hour.
- this "recovery anneal” is carried out after the parts have cooled from the last of the annealing steps described above that involve temperatures in excess of 500°C.
- the recovery anneal could be included in the last 500°C annealing step by lowering the temperature after this anneal to 200°C and then holding the parts at 200°C for an hour before completing the cool down process.
- Indium Oxide to its original resistivity is not known, it is clearly different from the mechanism reported by Gupta, et al.
- Gupta, et al. observe a continuing improvement with temperature whereas the resistance clearly increases under the conditions utilized in the present invention if the temperature is raised above about 350°C.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers (18) are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer (18) to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer (18) to a temperature between 100 °C and 300 °C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer (24).
Description
METHOD FOR RESTORING THE RESISTANCE OF INDIUM OXIDE SEMICONDUCTORS AFTER HEATING WHILE IN SEALED
STRUCTURES
This invention was made with U.S. Government support under contract
DE-AC04-94AL8500 awarded by the U.S. Department of Energy. The Government has certain rights in the invention. This application is a Continuation-in-Part of U.S. Patent application 08/260,028 filed June 15, 1995.
Field of the Invention
The present invention relates to semiconductor fabrication techniques, and more particularly, to a method for restoring the resistance of Indium Oxide semiconductors after heating in the presence of oxygen.
Background of the Invention
Memory devices based on Indium Oxide semiconductors deposited on lead zirconate titanates (PZT) are known to the prior art. For example, U.S. Patent No. 5,070,385 describes a memory element comprising a layer of In2O3 deposited on a layer of PZT. Two contacts are provided on the In2O3 layer. Ifthe PZT is polarized in one direction, the resistance between these contacts will be substantially different than the resistance measured if the PZT is polarized in the opposite direction.
Such memory devices often require an annealing step in which the device must be heated to temperatures in excess of 500°C after the In O3 is deposited thereon. The resistance of the In2O3 layer increases dramatically during this annealing step. This increase in resistance renders the devices inoperative for many applications.
The increase in resistance of In2O3 semiconductors when heated in the presence of oxygen is well known in the semiconductor arts. Indium tin oxide is often used as a substitute for In2O3 in those applications requiring heating in the presence of oxygen, since this increase in resistance does not manifest itself in Indium Tin Oxide until the temperature is raised to much higher levels.
Unfortunately, Indium Tin Oxide cannot be used in place of In2O3 on PZT if the PZT is to be heated to the above-described temperatures because the Tin diffuses out of the Indium Tin Oxide and alters the PZT.
It is also known to the art that annealing indium oxide thin films in vacuum after the resistance has increased due to heating in air can restore the resistance of the film (Gupta, et al., "Annealing effects in Indium Oxide Films Prepared by Reactive Evaporation", Thin Solid Films, 123, pp. 325-331, 1985). Gupta, et al. observed that the resistance of the film decreases when heated in vacuum. While the exact mechanism by which these resistance alterations take place is not well understood, it is known that oxygen vacancies are the primary carriers in indium oxide semiconductors. Hence, it is not surprising that heating in the presence of oxygen or in vaccum affects the resistivity of the indium oxide film, since both of these operations alter the oxygen vacancies in the film. Heating in the presence of oxygen would be expected to decrease the oxygen vacancies by adding oxygen to the vacancies, and heating in a vacuum would be expected to increase the oxygen vacancies by allowing oxygen to escape from the film. The improvement in the resistance when the films are heated in vacuum is observed over a wide range of temperatures, the improvement increasing with temperature at least for temperatures up to 350°C.
Unfortunately, vacuum annealing is not practical for indium oxide films that have been deposited on PZT. The properties of the PZT are altered by heating in vacuum after the PZT has been crystallized. A similar alterations occur with other oxygen containing ferroelectrics. These alterations substantially increase the rate at which information stored in the device is lost over time. To protect the PZT from such alterations, a dielectric layer, typically TiO2 is placed over the PZT and indium oxide film thereby isolating the PZT and indium oxide film from whatever gas or lack of gas is present above the thin film. This dielectric layer is impervious to oxygen, and hence, would prevent the oxygen exchange described above.
Broadly, it is the object of the present invention to provide an improved method for using In2O3 semiconductors in conjunction with oxygen containing ferroelectrics.
It is a further object of the present invention to provide a method for lowering the resistance of an In2O3 layer after exposure to high temperatures while maintaining the PZT and In2O3 layers sealed in dielectric.
These and other objects of the present invention will become apparent to those skilled in the art from the following detailed description of the invention and the accompanying drawings.
Summary of the Invention
The present invention utilizes a recovery annealing step which returns the In2O3 layer when deposited on PZT to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100°C and 300°C in the presence of oxygen for a period of time sufficient to cause the resistivity of the resistive layer to return to a predetermined value.
Brief Description of the Drawings
Figure 1 is a cross-sectional view of a device that may be fabricated using the method of the present invention.
Detailed Description of the Invention
The present invention may be more easily understood with reference to the process flow for creating a memory device based on In2O3 on PZT. Refer to Figure 1 which is a cross-section of a thin film ferroelectric transistor 10. Transistor 10 is constructed by depositing a bottom electrode 14 on a substrate 12. A PZT layer 16 is then deposited on bottom electrode 14. A semiconductor layer 18 is then deposited on PZT layer 16 and two contacts 20 and 21 provided on semiconductor layer 18. The electrical resistance of the circuit path between electrodes 20 and 21 is determined by the polarization of PZT layer 16. The polarization of the PZT layer is set by applying the appropriate potential difference between contacts 20 and 21 and bottom electrode 14.
To complete an integrated circuit part, a number of additional steps are needed after the deposition of semiconductor layer 18. In particular, the inter- layer dielectric layer 24 must be deposited over the circuit and vias opened to allow metallic connections to be made to contacts 20 and 21. These metallic connections are shown at 26 and 28. This process includes annealing steps that require that the entire circuit be heated to temperatures in excess of 500°C. As noted above, this heating step causes the In2O3 layer's resistivity to increase dramatically, thereby rendering the parts inoperative. In fact, substantial increases in resistivity are observed if the devices are heated to a temperature in excess of 400°C.
It should be noted that this increase in resistivity occurs even when the In2O3 is sealed under dielectric layer 24 which is preferrably TiO2. It should be noted that a TiO2 layer is impermeable to oxygen. Hence, the observed increase in resistance has a mechanism that is likely to be different from that observed by Gupta, et al. Futhermore, since the In2O3 is sealed under dielectric layer 24, annealing in vacuum is not possible, since dielectric layer 24 prevents any oxygen from escaping from the In2O3 layer.
It has been found experimentally that the resistivity of the In2O3 layer may be returned to its normal range if the structure is subjected to a second "recovery anneal" at 200°C after the high temperature annealing step described above. The parts are typically heated to 200°C for one hour. In the preferred embodiment of the present invention, this "recovery anneal" is carried out after the parts have cooled from the last of the annealing steps described above that involve temperatures in excess of 500°C. However, it will be apparent to those skilled in the art, that the recovery anneal could be included in the last 500°C annealing step by lowering the temperature after this anneal to 200°C and then holding the parts at 200°C for an hour before completing the cool down process.
While the above-described processing conditions represent the preferred embodiment of the present invention, it will be apparent to those skilled in the art from the above discussion that other combinations of annealing temperatures and annealing times will also function. As the temperature is lowered from the 200°C conditions described above, the annealing time increases exponentially. However, recovery of resistivity has been demonstrated for temperatures as low as 100°C.
Temperatures as high as 300°C have also been found to provide the desired recovery of the resistivity. Above this temperature, the resistivity does not fully recover to its original value.
While the mechanism by which this recovery anneal operates to return the
Indium Oxide to its original resistivity is not known, it is clearly different from the mechanism reported by Gupta, et al. Gupta, et al. observe a continuing improvement with temperature whereas the resistance clearly increases under the conditions utilized in the present invention if the temperature is raised above about 350°C.
While the above described embodiments of the present invention have been discussed in terms of a ferroelectric layer comprising of PZT, similar problems are encountered with other oxygen containing ferroelectrics. The optimum recovery anneal temperature and duration must be determined for each ferroelectric composition.
Various modifications to the present invention will become apparent to those skilled in the art from the foregoing description and accompanying drawings. Accordingly, the present invention is to be limited solely by the scope of the following claims.
Claims
1. In a method for the fabrication of a circuit element comprising the deposition of a semiconductor layer comprising Indium Oxide deposited on an oxygen containing ferroelectric sealed under a dielectric layer, followed by the heating of said semiconductor layer to a temperature in excess of 400┬░C, the improvement comprising the step of heating said semiconductor layer to a temperature between 100┬░C and 300┬░C and then cooling said circuit element to ambient temperature.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU18215/97A AU1821597A (en) | 1996-12-27 | 1996-12-27 | Method for restoring the resistance of indium oxide semiconductors after heatingwhile in sealed structures |
PCT/US1996/020669 WO1998029902A1 (en) | 1996-12-27 | 1996-12-27 | Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US1996/020669 WO1998029902A1 (en) | 1996-12-27 | 1996-12-27 | Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures |
Publications (1)
Publication Number | Publication Date |
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WO1998029902A1 true WO1998029902A1 (en) | 1998-07-09 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/US1996/020669 WO1998029902A1 (en) | 1996-12-27 | 1996-12-27 | Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures |
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AU (1) | AU1821597A (en) |
WO (1) | WO1998029902A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130337603A1 (en) * | 2012-06-18 | 2013-12-19 | Tel Solar Ag | Method for hydrogen plasma treatment of a transparent conductive oxide (tco) layer |
Citations (12)
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US3655545A (en) * | 1968-02-28 | 1972-04-11 | Ppg Industries Inc | Post heating of sputtered metal oxide films |
JPS59177921A (en) * | 1983-03-28 | 1984-10-08 | Sanyo Electric Co Ltd | Adhesion of film |
JPS6016462A (en) * | 1983-07-08 | 1985-01-28 | Seiko Epson Corp | Manufacture of semiconductor device |
EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
JPS6374033A (en) * | 1986-09-18 | 1988-04-04 | Canon Inc | Formation of pattern |
US4849252A (en) * | 1983-07-08 | 1989-07-18 | Schott-Glasswerke | Dipping process for the production of transparent, electrically conductive, augmented indium oxide layers |
JPH01187983A (en) * | 1988-01-22 | 1989-07-27 | Fujitsu Ltd | Manufacture of photodiode |
JPH03212976A (en) * | 1990-01-18 | 1991-09-18 | Agency Of Ind Science & Technol | Treatment method of cis structure containing transparent conductive oxide film |
US5070385A (en) * | 1989-10-20 | 1991-12-03 | Radiant Technologies | Ferroelectric non-volatile variable resistive element |
JPH04320380A (en) * | 1991-04-19 | 1992-11-11 | Fuji Electric Co Ltd | Manufacture of solar cell |
US5264077A (en) * | 1989-06-15 | 1993-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a conductive oxide pattern |
JPH0688973A (en) * | 1992-07-21 | 1994-03-29 | Semiconductor Energy Lab Co Ltd | Transparent electric conductive film, semiconductor device using the same, and its production |
-
1996
- 1996-12-27 WO PCT/US1996/020669 patent/WO1998029902A1/en active Application Filing
- 1996-12-27 AU AU18215/97A patent/AU1821597A/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US3655545A (en) * | 1968-02-28 | 1972-04-11 | Ppg Industries Inc | Post heating of sputtered metal oxide films |
JPS59177921A (en) * | 1983-03-28 | 1984-10-08 | Sanyo Electric Co Ltd | Adhesion of film |
JPS6016462A (en) * | 1983-07-08 | 1985-01-28 | Seiko Epson Corp | Manufacture of semiconductor device |
US4849252A (en) * | 1983-07-08 | 1989-07-18 | Schott-Glasswerke | Dipping process for the production of transparent, electrically conductive, augmented indium oxide layers |
EP0217095A2 (en) * | 1985-09-03 | 1987-04-08 | Siemens Aktiengesellschaft | Method of producing low-ohmic, transparent indium-tin oxide layers, especially for imagers |
JPS6374033A (en) * | 1986-09-18 | 1988-04-04 | Canon Inc | Formation of pattern |
JPH01187983A (en) * | 1988-01-22 | 1989-07-27 | Fujitsu Ltd | Manufacture of photodiode |
US5264077A (en) * | 1989-06-15 | 1993-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing a conductive oxide pattern |
US5070385A (en) * | 1989-10-20 | 1991-12-03 | Radiant Technologies | Ferroelectric non-volatile variable resistive element |
JPH03212976A (en) * | 1990-01-18 | 1991-09-18 | Agency Of Ind Science & Technol | Treatment method of cis structure containing transparent conductive oxide film |
JPH04320380A (en) * | 1991-04-19 | 1992-11-11 | Fuji Electric Co Ltd | Manufacture of solar cell |
JPH0688973A (en) * | 1992-07-21 | 1994-03-29 | Semiconductor Energy Lab Co Ltd | Transparent electric conductive film, semiconductor device using the same, and its production |
Non-Patent Citations (4)
Title |
---|
APPL. PHYS. LETT., 18 August 1986, Vol. 49, No. 7, MAJOR S. et al., "Hydrogen Plasma Treatment on Transparent Conducting Oxides", pages 394-96. * |
J. VAC. SCI. TECHNOL. A., July/August 1987, Vol. 5, No. 4, YAMAMOTO S. et al., "Properties of Sn-Doped In203 by Reactive Magnetron Sputtering and Subsequent Annealing", pages 1952-55. * |
THIN SOLID FILMS, 1985, Vol. 123, GUPTA A. et al., "Annealing Effects in Indium Oxide Films Prepared by Reactive Evaporation", pages 325-31. * |
THIN SOLID FILMS, 1989, Vol. 173, LEE C.H. et al., "Effects of Heat Treatment and Ion Doping of Indium Oxide", pages 61-66. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130337603A1 (en) * | 2012-06-18 | 2013-12-19 | Tel Solar Ag | Method for hydrogen plasma treatment of a transparent conductive oxide (tco) layer |
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Publication number | Publication date |
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AU1821597A (en) | 1998-07-31 |
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