WO1998023389A1 - Films azotes formes par depot chimique en phase vapeur a partir de nf3 comme source d'azote - Google Patents

Films azotes formes par depot chimique en phase vapeur a partir de nf3 comme source d'azote Download PDF

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Publication number
WO1998023389A1
WO1998023389A1 PCT/US1997/021449 US9721449W WO9823389A1 WO 1998023389 A1 WO1998023389 A1 WO 1998023389A1 US 9721449 W US9721449 W US 9721449W WO 9823389 A1 WO9823389 A1 WO 9823389A1
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WIPO (PCT)
Prior art keywords
substrate
reactor chamber
silicon
film
placing
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Application number
PCT/US1997/021449
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English (en)
Inventor
Prasad N. Gadgil
Carl J. Galewsky
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Genus, Inc.
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Publication date
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Publication of WO1998023389A1 publication Critical patent/WO1998023389A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides

Definitions

  • the present invention is in the area of methods and apparatus for processing wafers as a step in manufacturing integrated circuits (ICs), and relates in particular to chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) of tungsten or titanium with silicon and nitrogen, using NF 3 as a gaseous source of nitrogen in the processes.
  • CVD chemical vapor deposition
  • PECVD plasma-enhanced chemical vapor deposition
  • Manufacturing of integrated circuits is historically a procedure of forming thin films and layers of various materials on wafers of base semiconductor material, and then selectively removing areas of the films to produce structures and circuitry.
  • Doped silicon is a typical base wafer material, and in various process schemes, metal layers are formed on the doped silicon or on polysilicon or silicon oxide formed from the base material. It is well-known in the art that there are many difficulties in forming thin metal films, and in particular in forming such films on non-metallic base materials. Among these difficulties are problems of adhesion, and problems related to diffusion and reaction of materials across material boundaries.
  • PVD physical vapor deposition
  • CVD Chemical Vapor Deposition
  • PVD process is the well-known sputtering process, wherein a plasma of usually an inert gas is formed near a target material, and the target is biased to attract ions from the plasma to bombard the target. Atoms of the target material are dislodged by momentum transfer, and form an atomic flux of particles which coalesce on surrounding surfaces generally in line-of-sight of the target surface eroded by the sputtering process.
  • a plasma of usually an inert gas is formed near a target material, and the target is biased to attract ions from the plasma to bombard the target.
  • Atoms of the target material are dislodged by momentum transfer, and form an atomic flux of particles which coalesce on surrounding surfaces generally in line-of-sight of the target surface eroded by the sputtering process.
  • PVD processes have distinct advantages for some processes, such as high rate of deposition, and relatively simple coating apparatus. There are drawbacks as well, notably an inherent inability to provide adequate step coverage. That is, on surfaces having concavities as a result of previous coating and etching steps, PVD processes are prone to shadowing effects resulting in local nonuniformity of coating thickness. This problem has grown in importance as device density has increased and device geometry has shrunk in size, with multi-level interconnect schemes involving vias and trenches on microscopic scale.
  • CVD processes comprise deposition from gases injected into a chamber, wherein the gases or components of the gases are chemically decomposed and/or recombined by energy input.
  • the substrate to be coated is heated, and gases introduced into a chamber holding the substrate react at or very near the substrate surface in a manner to deposit a film of material on the surface.
  • gases introduced into a chamber holding the substrate react at or very near the substrate surface in a manner to deposit a film of material on the surface.
  • a film of metallic tungsten may be deposited on a heated substrate surface by flowing Tungsten hexafluoride to the surface in conjunction with a reducing gas, such a hydrogen.
  • a reducing gas such a hydrogen
  • transistors are developed on the surface of a doped silicon substrate. Once transistors are formed, to make a circuit, gates and drains have to be interconnected with electrically conductive tracks. This point in the overall IC fabrication process serves as perhaps the best example of a thin-film interface between a substrate material and an electrically-conductive metal.
  • Tungsten is deposited as a continuous (blanket) film on substrates, for example, to provide, after etching, both via plugs and interconnect tracks between devices implemented in doped silicon.
  • Combinations of tungsten with other elementss are deposited for other purposes, such as adhesion and barrier layers on gates of transistors implemented in silicon as an intermediate layer to improve adhesion and combat diffusion, for example, of silicon from the gates into the interconnect film.
  • the films deposited directly on the gates prior to the interconnect material are called barrier layers.
  • tungsten nitride One of the elements frequently combined with tungsten to provide specific desirable characteristics of a resulting film for adhesion and barrier purposes is Nitrogen to form tungsten nitride.
  • the inventors are aware of conventional chemistry and processes for deposition of WN X (Tungsten Nitride). In some instances it is desirable to combine tungsten with other elements as well as Nitrogen.
  • WN X Tin Nitride
  • One such combination of interest and potential use in gate technology is Tungsten- Silicon-Nitride.
  • Titanium there are also elements competitive to tungsten for gate processes.
  • One of these is Titanium, and materials of interest in combination with Titanium are Titanium Nitride(TiN) and Titanium Silicon Nitride (Ti x Si y N 2 ).
  • TiN Titanium Nitride
  • Ti x Si y N 2 Titanium Silicon Nitride
  • Nitrogen and perhaps the most common gas utilized as a source of Nitrogen in the CVD processes is ammonia (NH 3 ). It is well known in the art that there are many problems with handling NH 3 and mixing NH 3 with other gaseous components for CVD processes.
  • One such component is WF 6 which, when combined with NH 3 at room temperature produces an instantaneous and highly exothermic chemical reaction.
  • WF 6 which, when combined with NH 3 at room temperature produces an instantaneous and highly exothermic chemical reaction.
  • Such a gas phase reaction is highly undesirable because it leads to serious complications in CVD reactor design and operation.
  • an undesirable gas phase reaction leads to particulate formation, powdery deposits, and poor adhesion of films to the substrate.
  • the instantaneous reaction between WF 6 and NH 3 leads to coating on the reactor (process chamber) walls. This coating contributes significantly to particles due to peeling, and hence reactors must be completely and periodically cleaned for operation in the actual production environment.
  • transition metal nitrides and silicon nitrides.
  • a method for forming a nitrided film of a transitional metal on a surface of a substrate.
  • the method comprises steps of (a) placing the substrate in a reactor chamber; (b) heating the substrate; and (c) flowing a gas bearing the transitional metal, nitrogen trifluoride (NF 3 ), and hydrogen (H 2 ) into the reactor chamber and over the surface of the heated substrate.
  • NF 3 nitrogen trifluoride
  • H 2 hydrogen
  • the gas bearing a transitional metal in some embodiments is tungsten hexafluoride (WF 6 ). In other embodiments the gas bearing a transitional metal is titanium tetrachloride (TiCl 4 ).
  • a tungsten nitride (WN X ) film on a surface of a substrate is formed in a process comprising steps of (a) placing the substrate in a reactor chamber; (b) heating the substrate; and (c) flowing tungsten hexafluoride (WF 6 ), nitrogen trifluoride (NF 3 ), and hydrogen (H 2 ) into the reactor chamber and over the surface of the heated substrate.
  • a tungsten nitride (WN X ) film is formed in a process comprising steps of (a) placing the substrate in a reactor chamber; (b) heating the substrate;
  • the substrate temperature is typically lower than for those processes within the scope of the invention wherein a plasma is not used.
  • Various inert gases may be used in the plasma enhanced processes according to embodiments of the present invention, but argon is preferred.
  • a silicon-bearing gas is separately introduced along with WF 6 , and a tungsten silicon nitride (W x Si y N z ) film is formed. These films are formed in various embodiments both with and without plasma enhancement as well.
  • the silicon-bearing gas in some embodiments is silane (SiH 4 ), and in others the silicon-bearing gas is disilane (Si 2 H 6 ).
  • titanium silicon nitride (Ti x Si y N z ) films are formed on a surface of a substrate. These processes comprise steps of (a) placing the substrate in a reactor chamber; (b) heating the substrate; (c) flowing titanium tetrachloride (TiCl 4 ), nitrogen trifluoride (NF 3 ), a silicon- bearing gas, and hydrogen into the reactor chamber.
  • the processes for forming titanium silicon nitride include processes with and without plasma enhancement.
  • the silicon-bearing gas in some embodiments is silane, and in others is disilane or dichlorosilane.
  • an inert gas is provided in the processing chamber to support a plasma for plasma-enhanced chemical vapor deposition (PECVD).
  • the processes in embodiments of the invention have particular application for providing contact, adhesion, and barrier films in steps of integrated circuit manufacturing, wherein the substrate is a silicon wafer having integrated circuit (IC) structures formed thereon.
  • IC integrated circuit
  • the processes of the invention are applicable to equipment of many kinds, made by several different manufacturers.
  • substrates are moved into processing chambers from a load lock chamber into the reactor chamber.
  • the reactor chamber may be a single-wafer CVD reactor chamber adapted to a cluster tool material handling system, or a batch reactor chamber, wherein, in the step of placing the substrate, a batch of more than one wafer is moved into the CVD reactor chamber from a vacuum load-lock chamber.
  • Fig. 1 is a cross-section elevation view of a single wafer CVD deposition reactor for practicing the present invention.
  • Fig. 2 is a process diagram for deposition of WN X in an embodiment of the present invention, without plasma enhancement.
  • Fig. 3 is a process diagram for deposition of WN X in an embodiment of the present invention, with plasma enhancement.
  • Fig. 4 is a process diagram for deposition of W x Si y N z in an embodiment of the present invention.
  • Fig. 5 is an alternative process diagram for deposition of W x Si y N z in an embodiment of the present invention.
  • Fig. 6 is a process diagram for deposition of Ti x Si y N z in an embodiment of the present invention.
  • Fig. 7 is a process diagram for deposition of Ti x Si y N z an alternative embodiment of the invention.
  • Fig. 8 is a graph of film content for tungsten nitride films made with NF 3 chemistry according to an embodiment of the present invention, and with conventional NH 3 chemistry. Description of the Preferred Embodiments
  • Fig. 1 is a simplified cross-section elevation view of a single wafer CVD reactor chamber 11 for practicing the present invention.
  • Single wafer chambers are highly desirable in current art for adaptation to processing systems known generally as cluster tools, wherein one wafer at a time may be moved through vacuum load locks and sequentially through a number of individual processes before again being exposed to air.
  • Pick-and-place transfers not shown in Fig. 1, operating in a transport volume maintained at a high vacuum level, move wafers from one chamber to another for processing, and the individual processing chambers are isolated from the transport volume during processing.
  • transfer of wafers is made through valved port 28.
  • a number of such machines are known to the inventors, and among them is the Genus Series 7000TM machines, made by Genus, Inc. of Sunnyvale, CA.
  • a hermetically sealed chamber 13 is pumped through a pumping port 15 by a vacuum pumping system not shown, and gaseous process material are introduced via a ring manifold arrangement 17 and a showerhead manifold arrangement 19 from a remote gas supply system through manifolding 23.
  • the showerhead is typically electrically isolated from other metallic portions of the chamber, and may be grounded or connected to high-frequency power supplies for electrical biasing.
  • a gas mixing manifold (not shown) in this arrangement ensures that gases introduced into the showerhead manifold are thoroughly mixed.
  • Susceptor 23 is the CVD hearth in this embodiment, and supports a wafer 25 for processing.
  • the hearth, and hence the wafer, is heated by a plate heater 27 within an enclosure volume 29, and arrangements provide for an ability to flow gases into this volume and onto the backside of a wafer during processing.
  • Susceptor 23 is also electrically isolated and may be either grounded or biased as desired, such as by a high frequency power supply not shown.
  • Various sensors for measuring process parameters such as temperature and pressure are also interfaced with the CVD reactor, although not specifically shown in Fig. 1. It will be apparent to those with skill in the art that the features mentioned here but not shown are well-known in the art.
  • CVD reactor 11 depicted in Fig. 1 is well-suited for conducting CVD processes according to the present invention. It will be apparent to those with skill in the art, however, that the invention is not limited to the reactor shown, and may be practiced in a wide variety of CVD reactors, including those reactors known as batch reactors in the art, wherein several wafers at a time are transferred into a reactor chamber, and processed in the reactor simultaneously.
  • the inventors have developed Tungsten Nitride processes using NF 3 as a nitrogen source, providing significant simplification in process chemistry as well as in reactor design and operation.
  • these substances In light of reactivity of WF 6 and NH 3 , these substances must be injected separately and also very evenly over a heated substrate surface to achieve uniform film deposition.
  • these gases In addition, to minimize the undesirable gas phase reaction, these gases must be so injected that they react just above the substrate surface.
  • Such constraints lead to complications in the design of the gas distribution manifold, the shower-head and in reactor operation. Such complications invariably affect the large area film uniformity adversely.
  • NF 3 in lieu of NH 3 removes these constraints completely. Since NF 3 and WF 6 do not react with each other or with H 2 at room temperature, they can be thoroughly mixed prior to injection, and the resultant mixture can be evenly distributed over the entire deposition surface with simplicity and efficiency. The use of NF 3 thus simplifies the CVD reactor design and its operation. The premature and undesirable gas phase reactions and wall coatings are also minimized.
  • Fig. 2 is a process diagram for an exemplary CVD process using NF 3 without plasma enhancement for producing WN X and Fig. 3 is a diagram for a for an exemplary process for deposition of WN X with use of plasma enhancement.
  • Fig. 2 there are, in Fig. 2 and other exemplary process diagrams below, separate charts depicting important variables in the processes.
  • total chamber pressure is shown in upper chart 31
  • wafer temperature is shown in middle chart 33
  • process gas flows are shown in bottom chart 35.
  • Time is shown in all charts on the horizontal scale. It will be apparent to those with skill in the art that there will be deviations that may be made without departing from the spirit and scope of the invention. For example, more or less time could be taken and other variables adjusted to suit, and there are ranges within which pressures and gas flows will still be effective to produce films of desirable composition. As described above, the charts shown are exemplary.
  • Fig. 3 the tungsten nitride process is shown with the unique chemistry, but with energy added by virtue of plasma enhancement.
  • Plasma power is shown in the middle chart of Fig. 3 along with substrate temperature.
  • Plasma power is provided in the process depicted by Fig. 3 at about the seventy-second mark at a level of 125 Watts, and is continued to about 290 seconds. It will be apparent to those with skill in the art that the time duration for deposition depends on the thickness of film desired.
  • the substrate temperature for the PECVD process of Fig. 3 is about 350 degrees C, while for the process depicted in Fig. 2, without plasma enhancement, the substrate temperature is about 500 degrees C.
  • Hydrogen is a common reducer (reducing agent) for WF 6 and NF 3 . Both of these chemicals neither react with each other nor with hydrogen upon mixing at room temperature. Hence, these gases can be, and in preferred embodiments of the present invention are, mixed together before they are brought into the process volume to be passed over the substrate.
  • NF 3 with a boiling point of -129 C is a stable gas, which becomes reactive upon heating above 250-300 C.
  • the CVD process without plasma enhancement is particularly preferred because this process exhibits a higher degree of step coverage than does the plasma enhanced process
  • the gaseous mixture introduced in the reaction chamber with the composition as described above is within the range of non-explosivity.
  • the explosivity experiments from the reference above were performed at atmospheric pressure.
  • the chamber pressure in the process embodiment described is, however, 100 mTorr.
  • the explosive nature of reaction of NF 3 with H 2 may be one of the reasons for efficiency of incorporation of N in WN X film in processes incorporating NF 3 as the Nitrogen source.
  • a temperature range of from 300 - 450 C for the process has been established, and a pressure range of from 50 mTorr to 2 Torr.
  • the gaseous mixture of WF 6 , NF 3 , and SiH 4 are considerably diluted with hydrogen in order to operate the process safely. It is also necessary to separate the reactants as shown with parenthesis in the above equation before they reach the wafer surface because silane and disilane both react with WF 6 and NF 3 instantaneously at room temperature.
  • Some appropriate ranges of conditions for deposition are: wafer temperature : 300 C - 500 C; system pressure : 50 mTorr to 10 Torr.; H 2 flow rate > 500 seem.; WF 6 flow rate varied from 4 seem to 10 seem.; 0.625 ⁇ ( NF 3 / WF 6 ) ⁇ 3.5 and 0.5 ⁇ ( SiH 4 / NF 3 ) ⁇ 5.0.
  • Fig. 4 is a process diagram for deposition of W x Si y N z using silane and NF 3
  • Fig. 5 is a process flow diagram for deposition of W x Si y N z using disilane and NF 3 .
  • the chemical process as described in equation 2 can be performed in plasma enhanced CVD mode as well, much as described above for tungsten nitride films.
  • Thin films with composition Ti 046 Si 003 N 051 have been deposited in the prior art by employing Ti[N(C 2 H 5 ) 4 ] tetrakis-dethylamido titanium, (TDEAT) as a titanium source and SiH 4 and NH 3 as Si and Nitrogen sources respectively in the temperature range of 300 - 450 C at 20 Torr.
  • TDEAT is an expensive organometallic source material and also reacts with both SiH 4 and NH 3 upon mixing, and hence the flow of TDEAT must be separated from these two precursors in the manifold.
  • Silane doesn't thermally react with ammonia in the temperature range of deposition and thus the Si content of the film can be varied by either increasing the silane content in the flow or by increasing the deposition temperature.
  • NF 3 in lieu of NH 3 which reacts spontaneously with silane or disilane, one can vary the Si content in the film and better control its barrier properties.
  • the parallel co-reduction chemistry described above unique to the NF 3 chemistry of the present invention is an added benefit.
  • Thin films of Ti x Si y N z are deposited in an embodiment of the present invention by employing a simple and inexpensive TiCl 4 chemistry in conjunction with either silane or disilane.
  • the precursors must be separated as shown in equation (3) above to avoid undesirable vapor phase pre-reaction.
  • the range of conditions for deposition are : wafer temperature : 300 C - 600 C, system pressure : 50 mTorr to 20 Torr. H 2 flow rate from 300 to 500 seem.
  • TiCl 4 flow rate varied from 5 seem to 20 seem. 0.625 ⁇ ( NF 3 / TiCl 4 ) ⁇ 3.5 and 0.5 ⁇ ( SiH 4 / NF 3 ) ⁇ 5.0 .
  • Fig. 6 is a process diagram for an exemplary process for deposition of Ti x Si y N z in an embodiment of the present invention, using silane.
  • Fig. 7 is a process diagram for an exemplary process for deposition of Ti x Si y N z in an embodiment of the present invention, using disilane.
  • the process described in equation 3 may be performed also in Plasma Enhanced CVD mode, much as described for the other exemplary processes described above.
  • the plasma enhanced CVD processes described above involving NF 3 are modified by an addition of an inert gas such as Helium or Argon.
  • an inert gas such as Helium or Argon.
  • He or Ar preferably Ar
  • a significant advantage of NF 3 chemistry in all of its forms in the present disclosure is the co-reduction characteristic as described above. Because each of the desired products of the composite films is formed in an essentially independent chemical reaction, control of film composition is straightforward and predictable.
  • Fig. 8 is a graph prepared from experimental data collected in practicing the tungsten nitride NF 3 processes described above and in practicing conventional tungsten nitride NH 3 processes.
  • the films prepared are a mixture of tungsten and tungsten nitride (W 2 N) after annealing.
  • the ordinate in the graph represents film content by percent for materials represented in the graph, while the abcissa represents the ratio of nitrogen-bearing gas in the process (either NH 3 or NF 3 ) to tungsten hexafluoride (WF 6 ).
  • Curve 35 indicates W 2 N percent content for the unique NF 3 process of the present invention
  • curve 37 represents W 2 N percent for conventional NH 3 processing. It is readily apparent that the W 2 N content increases more rapidly for the unique NF 3 process than for the conventional process. For example, a 50% level is reached for NF 3 processing at a ratio of about 0.4, while for conventional NH 3 processing a ratio of about 0.7 is needed for a 50% level.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne des procédés permettant de former des films nitrurés pour la fabrication de circuits intégrés, et qui s'effectuent par dépôt chimique en phase vapeur au moyen de trifluorure d'azote (NF3), lequel est utilisé comme gaz azoté apportant l'azote au film nitruré. Le procédé consiste à placer un substrat dans une chambre (11) de réacteur de dépôt chimique en phase vapeur, à chauffer le substrat (25), et à faire couler les précurseurs contenant du trifluorure d'azote sur la surface du substrat traité de sorte que les films nitrurés soient formés. On donne des exemples de procédés dans lesquels les films nitrurés sont composés de nitrure de tungstène, de nitrure de tungstène-silicium, et de nitrure de titane-silicium. Les variantes du procédé consistent à former le film avec ou sans enrichissement au plasma, et à ajouter du silicium aux films, par l'intermédiaire de silane ou de disilane.
PCT/US1997/021449 1996-11-26 1997-11-24 Films azotes formes par depot chimique en phase vapeur a partir de nf3 comme source d'azote WO1998023389A1 (fr)

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US75656296A 1996-11-26 1996-11-26
US08/756,562 1996-11-26

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001024227A2 (fr) * 1999-09-30 2001-04-05 Genus, Inc. PROCESSUS DE DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET DE DEPOT CHIMIQUE EN PHASE VAPEUR POUR DEPOT DE WNx
US6235632B1 (en) * 1998-01-13 2001-05-22 Advanced Micro Devices, Inc. Tungsten plug formation
US6274484B1 (en) * 2000-03-17 2001-08-14 Taiwan Semiconductor Manufacturing Company Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers
WO2002043125A2 (fr) * 2000-11-21 2002-05-30 Micron Technology, Inc. Procede de depot de couches atomiques pour ameliorer un revetement de surface
CN107365976A (zh) * 2013-02-21 2017-11-21 应用材料公司 用于注射器至基板的空隙控制的装置及方法

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US4830891A (en) * 1986-12-01 1989-05-16 Hitachi, Ltd. Method for selective deposition of metal thin film
US4897709A (en) * 1988-04-15 1990-01-30 Hitachi, Ltd. Titanium nitride film in contact hole with large aspect ratio
US5114750A (en) * 1990-11-06 1992-05-19 The Dow Chemical Company Tungsten and tungsten nitride coatings for metals and ceramics
US5429991A (en) * 1989-08-03 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Method of forming thin film for semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830891A (en) * 1986-12-01 1989-05-16 Hitachi, Ltd. Method for selective deposition of metal thin film
US4897709A (en) * 1988-04-15 1990-01-30 Hitachi, Ltd. Titanium nitride film in contact hole with large aspect ratio
US5429991A (en) * 1989-08-03 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Method of forming thin film for semiconductor device
US5114750A (en) * 1990-11-06 1992-05-19 The Dow Chemical Company Tungsten and tungsten nitride coatings for metals and ceramics

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235632B1 (en) * 1998-01-13 2001-05-22 Advanced Micro Devices, Inc. Tungsten plug formation
US6635570B1 (en) 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
WO2001024227A3 (fr) * 1999-09-30 2001-10-04 Genus Inc PROCESSUS DE DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET DE DEPOT CHIMIQUE EN PHASE VAPEUR POUR DEPOT DE WNx
EP1222687A4 (fr) * 1999-09-30 2006-11-02 Genus Inc PROCESSUS DE DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET DE DEPOT CHIMIQUE EN PHASE VAPEUR POUR DEPOT DE WNx
EP1222687A2 (fr) * 1999-09-30 2002-07-17 Genus, Inc. PROCESSUS DE DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET DE DEPOT CHIMIQUE EN PHASE VAPEUR POUR DEPOT DE WNx
WO2001024227A2 (fr) * 1999-09-30 2001-04-05 Genus, Inc. PROCESSUS DE DEPOT CHIMIQUE EN PHASE VAPEUR ACTIVE PAR PLASMA ET DE DEPOT CHIMIQUE EN PHASE VAPEUR POUR DEPOT DE WNx
US6274484B1 (en) * 2000-03-17 2001-08-14 Taiwan Semiconductor Manufacturing Company Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers
US6596636B2 (en) * 2000-11-21 2003-07-22 Micron Technology, Inc. ALD method to improve surface coverage
US6559472B2 (en) 2000-11-21 2003-05-06 Micron Technology, Inc. Film composition
WO2002043125A3 (fr) * 2000-11-21 2003-01-03 Micron Technology Inc Procede de depot de couches atomiques pour ameliorer un revetement de surface
US6835980B2 (en) 2000-11-21 2004-12-28 Micron Technology, Inc. Semiconductor device with novel film composition
US6949827B2 (en) 2000-11-21 2005-09-27 Micron Technology, Inc. Semiconductor device with novel film composition
WO2002043125A2 (fr) * 2000-11-21 2002-05-30 Micron Technology, Inc. Procede de depot de couches atomiques pour ameliorer un revetement de surface
CN107365976A (zh) * 2013-02-21 2017-11-21 应用材料公司 用于注射器至基板的空隙控制的装置及方法
CN107365976B (zh) * 2013-02-21 2020-11-20 应用材料公司 用于注射器至基板的空隙控制的装置及方法

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