WO1998015978A1 - Circuit integre hybride, de grande puissance et a frequences micro-ondes - Google Patents

Circuit integre hybride, de grande puissance et a frequences micro-ondes

Info

Publication number
WO1998015978A1
WO1998015978A1 PCT/RU1996/000289 RU9600289W WO9815978A1 WO 1998015978 A1 WO1998015978 A1 WO 1998015978A1 RU 9600289 W RU9600289 W RU 9600289W WO 9815978 A1 WO9815978 A1 WO 9815978A1
Authority
WO
WIPO (PCT)
Prior art keywords
πlaτy
parts
recesses
integrated circuit
dieleκτρichesκuyu
Prior art date
Application number
PCT/RU1996/000289
Other languages
English (en)
Russian (ru)
Inventor
Viktor Anatolievich Iovdalsky
Original Assignee
Samsung Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co., Ltd. filed Critical Samsung Electronics Co., Ltd.
Priority to PCT/RU1996/000289 priority Critical patent/WO1998015978A1/fr
Publication of WO1998015978A1 publication Critical patent/WO1998015978A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the fasten- ing invention is not available in the area of electronic equipment, but the exact hybrid scheme of the midrange is more specific.
  • Izves ⁇ na m ⁇ schnaya gib ⁇ idnaya in ⁇ eg ⁇ alnaya s ⁇ ema s ⁇ de ⁇ zhaschaya diele ⁇ iches ⁇ uyu ⁇ la ⁇ u with ⁇ ve ⁇ s ⁇ iyami and ⁇ l ⁇ giches ⁇ im ⁇ isun ⁇ m me ⁇ allizatsii on litsev ⁇ y s ⁇ ne, me ⁇ alliches ⁇ y ⁇ us, sis ⁇ emu zhid ⁇ s ⁇ n ⁇ g ⁇ ⁇ lazhdeniya in ⁇ y ⁇ lazhdayuschaya zhid ⁇ s ⁇ ⁇ di ⁇ ne ⁇ s ⁇ eds ⁇ venn ⁇ between ⁇ la ⁇ y and ⁇ sn ⁇ vaniem ⁇ usa.
  • the cooling system is separated by metal plugs in connection with the payment of the device over the board.
  • ⁇ is ⁇ ally bes ⁇ usny ⁇ ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ ⁇ ib ⁇ v ⁇ as ⁇ l ⁇ zheny in ⁇ ve ⁇ s ⁇ iya ⁇ ⁇ la ⁇ y and za ⁇ e ⁇ leny on me ⁇ alliches ⁇ i ⁇ zaglush ⁇ a ⁇ ⁇ b ⁇ a ⁇ n ⁇ y s ⁇ n ⁇ y ⁇ is ⁇ alla ⁇ a ⁇ im ⁇ b ⁇ az ⁇ m, ch ⁇ front ⁇ ve ⁇ n ⁇ s ⁇ ⁇ is ⁇ all ⁇ v with ⁇ n ⁇ a ⁇ nymi ⁇ l ⁇ schad ⁇ ami na ⁇ di ⁇ sya in ⁇ dn ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i with ⁇ ve ⁇ n ⁇ s ⁇ yu ⁇ la ⁇ y.
  • the indicated hybrid integrated circuit is characterized by low mass and size characteristics.
  • ⁇ ⁇ sn ⁇ vu iz ⁇ b ⁇ e ⁇ eniya was ⁇ l ⁇ zhena task s ⁇ zdaniya m ⁇ schn ⁇ y gib ⁇ idn ⁇ y in ⁇ eg ⁇ aln ⁇ y s ⁇ emy S ⁇ CH dia ⁇ az ⁇ na, ⁇ ns ⁇ u ⁇ ivn ⁇ e vy ⁇ lnenie ⁇ y ⁇ zv ⁇ lil ⁇ would uluchshi ⁇ mass ⁇ gaba ⁇ i ⁇ nye ⁇ a ⁇ a ⁇ e ⁇ is ⁇ i ⁇ i, uvelichi ⁇ ⁇ chn ⁇ s ⁇ , nadezhn ⁇ s ⁇ and ⁇ e ⁇ n ⁇ l ⁇ gichn ⁇ s ⁇ .
  • B is the thickness of the ⁇ p (in mm).
  • the channels can be executed with metalized anticorrosion, and the response to the days of the recesses may be filled with electric and non-exhausting.
  • ⁇ azmeschenie ⁇ is ⁇ all ⁇ v in uglubleniya ⁇ , imeyuschi ⁇ in the bottom ⁇ ve ⁇ s ⁇ iya, za ⁇ lnennye ⁇ e ⁇ l ⁇ v ⁇ dyaschim ma ⁇ e ⁇ ial ⁇ m, ⁇ zv ⁇ lyae ⁇ uvelichi ⁇ ⁇ chn ⁇ s ⁇ ⁇ ns ⁇ u ⁇ tsii and znachi ⁇ and nadezhn ⁇ s ⁇ on account is ⁇ lyucheniya v ⁇ zm ⁇ zhn ⁇ s ⁇ i ⁇ ni ⁇ n ⁇ veniya ⁇ e ⁇ l ⁇ n ⁇ si ⁇ elya between s ⁇ en ⁇ ami ⁇ ve ⁇ s ⁇ iya and ⁇ is ⁇ all ⁇ m.
  • v ⁇ -v ⁇ y ⁇ uluchshae ⁇ sya ⁇ e ⁇ l ⁇ v ⁇ d ⁇ ⁇ is ⁇ all ⁇ v in ⁇ ezul ⁇ a ⁇ e is ⁇ lyucheniya v ⁇ zdushn ⁇ y ⁇ sl ⁇ y ⁇ i and nal ⁇ zheniya and za ⁇ e ⁇ leniya ⁇ ysh ⁇ i ne ⁇ s ⁇ eds ⁇ venn ⁇ on ⁇ la ⁇ u, ⁇ es ⁇ in ne ⁇ s ⁇ eds ⁇ venn ⁇ y bliz ⁇ s ⁇ i ⁇ ⁇ e ⁇ l ⁇ vydelyayuschi ⁇ elemen ⁇ v, ⁇ as ⁇ l ⁇ zhenny ⁇ on ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ is ⁇ all ⁇ v or ne ⁇ s ⁇ eds ⁇ venn ⁇ y bliz ⁇ s ⁇ i ⁇ it. ⁇ 98/15978
  • the limitation of the thickness of the bottom of the recess in the plate is due to its ordinaryness.
  • the thickness and dielectricity difference is due to the conditions of minimal loss of input signal and output frequency.
  • the limitation of the width of the channel from the bottom is due to the conditions of the best heating from the installation.
  • Pa ⁇ en ⁇ ue maya m ⁇ schnaya gib ⁇ idnaya in ⁇ eg ⁇ alnaya s ⁇ ema S ⁇ CH dia ⁇ az ⁇ na s ⁇ de ⁇ zhi ⁇ diele ⁇ iches ⁇ uyu ⁇ la ⁇ u 1 ( ⁇ ig.1) s ⁇ s ⁇ yaschuyu of dvu ⁇ chas ⁇ ey 2 and 3, na ⁇ ime ⁇ from ⁇ li ⁇ a, sa ⁇ i ⁇ a ni ⁇ ida or aluminum ⁇ lschin ⁇ y 0.5mm ge ⁇ me ⁇ ichn ⁇ s ⁇ edinenny ⁇ between s ⁇ b ⁇ y ⁇ b ⁇ a ⁇ nymi s ⁇ nami, na ⁇ ime ⁇ , s ⁇ leenny ⁇ connected, connected diffuse welded or other well-known method.
  • channels 4 were made for circulation of the cooling liquid.
  • a technical drawing of 5 metallization was performed, for example, having a structure of ⁇ (100 ⁇ m / mm 2 ) - ⁇ (0.2 mm) - ⁇ and (3 m felicit m).
  • ⁇ is ⁇ ally 6 bes ⁇ usny ⁇ ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ ⁇ ib ⁇ v, na ⁇ ime ⁇ , ⁇ anzis ⁇ v ZP603B-5 ⁇ azme ⁇ m 0,5x0,45x0,3 mm us ⁇ an ⁇ vleny in ⁇ beme ⁇ la ⁇ y 1 ⁇ a ⁇ , ch ⁇ facial ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ is ⁇ all ⁇ v 6 ⁇ as ⁇ l ⁇ zheny in ⁇ dn ⁇ y ⁇ l ⁇ s ⁇ s ⁇ i with litsev ⁇ y ⁇ ve ⁇ n ⁇ s ⁇ yu ⁇ la ⁇ y 1.
  • Sections 6 are installed in recesses 8 and secured with a binder 9, for example, with an ECHE-S glue.
  • dielectric gun 10 for example, is made of a 0.2 mm thick starfish, is hermetically connected to the plate 1.
  • the hole size 8 for the phone is 0.6 mm
  • Channels 4 are provided with recesses 14 with a depth of 0.1 mm on the back of the plate 1, having a thickness of 0.2 mm ( ⁇ 0, 1 mm from each part of the plate 1).
  • the bottom thickness of 11 recesses 8 is 70 microns.
  • Bulk 10 is connected to a plate 1 with dielectric material 15, for example, with 501/07 ⁇ -8 ⁇ B glue with an aluminum nitride filler.
  • the width of channel 4 is chosen to be equal to 0.8 mm.
  • the backside of board 1 and recess 14 in it has a metalization of 16 with a structure, for example, ⁇ (100 ⁇ m / mm 2 ) - ⁇ (0.2 ⁇ m) - ⁇ debt (3 ⁇ m).
  • Parts 2 and 3 of payment 1 are optionally secured with a clamp 17 (Fig. 2), made, for example, from titanium.
  • the hybrid integrated circuit of the NCH range is, according to the invention, works by the following method.
  • the part emitted by crystals 6 (Fig. 1) is dispersed in all directions: downward after 1 1 of the recesses 8 with holes 12, filled with material 13, which results in a loss of 9 , the best conditions are provided for the return of heat from crystals 6.
  • Pa ⁇ en ⁇ ue maya m ⁇ schnaya gib ⁇ idnaya in ⁇ eg ⁇ alnaya s ⁇ ema ⁇ zv ⁇ lyae ⁇ ⁇ vysi ⁇ ⁇ chn ⁇ s ⁇ and nadezhn ⁇ s ⁇ ⁇ ns ⁇ u ⁇ tsii on account ⁇ azmescheniya ⁇ is ⁇ all ⁇ v in uglubleniya ⁇ ⁇ la ⁇ y, uluchshi ⁇ mass ⁇ gaba ⁇ i ⁇ nye ⁇ a ⁇ a ⁇ e ⁇ is ⁇ i ⁇ i on account is ⁇ lz ⁇ vaniya s ⁇ s ⁇ avn ⁇ y ⁇ ns ⁇ u ⁇ tsii ⁇ la ⁇ y, ⁇ ⁇ 98/15978 ⁇ / ⁇ 6 / 00289
  • the invention may be used in the consumer microelectronics industry.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Curing Cements, Concrete, And Artificial Stone (AREA)

Abstract

Cette invention concerne un circuit intégré hybride, de grande puissance et à fréquences micro-ondes, lequel comprend une plaquette diélectrique (1) qui se compose de deux parties (2, 3) connectées hermétiquement l'une à l'autre par leurs côtés arrière. Des cristaux (6) sont disposés dans des renfoncements (8) dont le fond (11) comporte des ouvertures (12) remplies d'un matériau électro-conducteur (13). Les renfoncements (8) sont pratiqués sur les surfaces avant des deux parties (2, 3) de la plaquette (1), un cache (10) étant fixé hermétiquement sur lesdites surfaces avant des parties (2, 3) de la plaquette (1).
PCT/RU1996/000289 1996-10-10 1996-10-10 Circuit integre hybride, de grande puissance et a frequences micro-ondes WO1998015978A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/RU1996/000289 WO1998015978A1 (fr) 1996-10-10 1996-10-10 Circuit integre hybride, de grande puissance et a frequences micro-ondes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/RU1996/000289 WO1998015978A1 (fr) 1996-10-10 1996-10-10 Circuit integre hybride, de grande puissance et a frequences micro-ondes

Publications (1)

Publication Number Publication Date
WO1998015978A1 true WO1998015978A1 (fr) 1998-04-16

Family

ID=20130044

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU1996/000289 WO1998015978A1 (fr) 1996-10-10 1996-10-10 Circuit integre hybride, de grande puissance et a frequences micro-ondes

Country Status (1)

Country Link
WO (1) WO1998015978A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3736856A1 (fr) * 2019-05-09 2020-11-11 INTEL Corporation Ensemble de micro-électronique comprenant des emballages supérieur et inférieur dans une configuration empilée avec refroidissement partagé

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106188A (en) * 1976-04-19 1978-08-15 Hughes Aircraft Company Transistor cooling by heat pipes
US4327399A (en) * 1979-01-12 1982-04-27 Nippon Telegraph & Telephone Public Corp. Heat pipe cooling arrangement for integrated circuit chips
RU92014501A (ru) * 1992-12-25 1996-08-20 В.А. Иовдальский Мощная гибридная интегральная схема свч-диапазона

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4106188A (en) * 1976-04-19 1978-08-15 Hughes Aircraft Company Transistor cooling by heat pipes
US4327399A (en) * 1979-01-12 1982-04-27 Nippon Telegraph & Telephone Public Corp. Heat pipe cooling arrangement for integrated circuit chips
RU92014501A (ru) * 1992-12-25 1996-08-20 В.А. Иовдальский Мощная гибридная интегральная схема свч-диапазона

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
OFITSIALNY BJULLETEN KOMITETA ROSSYSKOI FEDERATSII PO PATENTAM I TOVARNYM ZNAKAM, IZOBRETENYA, No. 23, 20 August 1996, (VNIIPI, Moscow); & RU,A,92 014 501 (IOVDALSKY V.A.) page 72. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3736856A1 (fr) * 2019-05-09 2020-11-11 INTEL Corporation Ensemble de micro-électronique comprenant des emballages supérieur et inférieur dans une configuration empilée avec refroidissement partagé
US11915996B2 (en) 2019-05-09 2024-02-27 Intel Corporation Microelectronics assembly including top and bottom packages in stacked configuration with shared cooling

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