WO1997025644A2 - Source lumineuse de champ proche - Google Patents
Source lumineuse de champ proche Download PDFInfo
- Publication number
- WO1997025644A2 WO1997025644A2 PCT/DE1997/000059 DE9700059W WO9725644A2 WO 1997025644 A2 WO1997025644 A2 WO 1997025644A2 DE 9700059 W DE9700059 W DE 9700059W WO 9725644 A2 WO9725644 A2 WO 9725644A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- field light
- light source
- source according
- carrier element
- active material
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
- G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
Definitions
- the invention relates to a near-field light source, in particular for backlighting a sample in a microscope according to the preamble of claim 1.
- the so-called nano light source according to Prof. Aaron Lewis which consists of a glass capillary which is conically extended to 50 nm and which is filled with anthracite as exciton-active material, whereby the anthracene is emitted by an argon laser is excited.
- the small illumination field is disadvantageous here.
- the invention is therefore based on the object of creating a near-field light source, in particular for near-field microscopy, which has the largest possible illumination field and has as few moving parts as possible.
- the invention includes the technical teaching of arranging a large number of near-field light sources next to one another in a grid and to excite the individual near-field light sources together or in succession.
- the individual near-field light sources each consist of a hollow channel in a carrier element which preferably consists of semiconductor material, the individual hollow channels being at least partially filled with an exciton-active material.
- the term hollow channel is to be understood here and in the following generally and is not restricted to continuous channels, but also includes cavities in the carrier element.
- exciton-active material can be introduced into the carrier element and the exciton-active material is then accessible for excitation by a laser or electron beam, for which purpose a radiation source is provided which is provided the side of the carrier element facing away from the sample is arranged.
- the semiconductor plate preferably consists of a gallium arsenide semiconductor, but it is also possible to implement the near-field light source according to the invention with other semiconductor connections.
- Anthracene is particularly suitable as exciton-active material in the individual hollow channels, but the use of other excitone-active materials, such as amorphous or porous silicon, is also possible.
- the radiation source used to excite the exciton-active material is a laser, the radiation generated by the laser being passed on to the individual near-field light sources by means of an optical fiber bundle.
- the ends of the individual optical waveguides on the sample side each end in the region of a hollow channel, whereas the ends facing away from the sample are each connected to the laser.
- the light guide bundle is preferably tapped in such a way that the distal end is matched in cross section and can be placed on the carrier element.
- the excitation of the individual near-field light sources can take place jointly for all near-field light sources or sequentially by means of a laser scanner, which couples the light generated one after the other into the individual light guides of the light guide bundle.
- the excitation of the individual near-field light sources does not take place optically, but by means of an electron beam.
- an electron emitter is provided on the side of the carrier element facing away from the sample, a deflection device being arranged between the carrier element and the electron emitter, which deflects the electron beam one after the other at the individual near-field light sources.
- the deflection device consists of capacitor plates, which are arranged in front of the electron emitter and deflect the electron beam on account of the electrical field existing between the capacitor plates, so that the deflection angle is caused by the electrical voltage to the Capacitor plates can be adjusted.
- the deflection device has a coil which is arranged in front of the electron emitter and generates a magnetic field, so that the electron beam is deflected due to the Lorenz force.
- the carrier element also serves to receive the sample and is flat on the sample side so that the sample can be applied directly to the carrier element serving as a slide.
- FIG. 2 shows another near-field light source according to the invention with a laser and a deflection device for sequential excitation of the individual near-field light sources, likewise in a perspective view,
- FIG. 3 shows a near-field light source according to the invention with a laser for excitation of the individual light sources and an optical fiber bundle for the common excitation of the individual near-field light sources and
- FIG. 4 shows a cross-section of a near-field light source of one of the above-mentioned exemplary embodiments.
- FIG. 1 shows a semiconductor plate 1 made of gallium arsenide as a carrier element for a large number of near-field light sources, which are shown in detail in FIG.
- the semiconductor plate 1 has a multiplicity of continuous hollow channels 2, which are partially filled with anthracene 3 as exciton-active material.
- SEW laser-induced electromagnetic surface waves
- s- or p-polarized UV laser light is emitted onto the semiconductor plate 1 at an angle suitable for imaging via holographic gratings.
- the individual near-field light sources are excited by an electron beam 5, which is emitted by an electron emitter 6 arranged on the side of the semiconductor plate 1 facing away from the sample.
- the electron emitter 6 is shown here on a different imaging scale than the semiconductor plate 1 with the individual near-field light sources.
- the semiconductor plate 1 thus appears greatly enlarged in relation to the electron emitter 6.
- a deflection device is also arranged between the electron emitter 6 and the semiconductor plate 1, which deflects the electron beam 5 sequentially in the direction of the individual near-field light sources.
- the deflection device has two pairs of capacitor plates 7.1, 7.2, 8.1, 8.2, which each surround the electron beam 5 in pairs and deflect due to the electric field between the capacitor plates 7.1, 7.2, 8.1, 8.2.
- the deflection angle of the electron beam 5 can therefore be adjusted by the capacitor voltage.
- the two pairs of capacitor plates 7.1, 7.2, 8.1, 8.2 are oriented differently and are controlled separately in order to be able to deflect the electron beam 5 in different directions.
- the light generated by the individual near-field light sources then passes through the sample 4 and is fed via a lens 10, which is only shown schematically, to a detector array 11, which thus takes an image of the sample 4.
- FIG. 2 shows a further exemplary embodiment of a near-field light source according to the invention, which largely corresponds to the exemplary embodiment described above, so that — as in the following — for details that are identical in construction and function, are identified by the same reference numerals.
- the semiconductor plate 1 is - as already shown in FIG. 1 - greatly enlarged compared to the remaining details of the drawing.
- the individual near-field light sources are excited by a laser beam 12, which is generated by an argon ion laser 13 arranged on the side of the semiconductor plate 1 facing away from the sample.
- the excitation of the individual near-field light sources by the laser beam 12 also takes place sequentially, in that the laser beam 12 is deflected one after the other by a deflection device in the direction of the individual near-field light sources.
- the deflection device essentially consists of a mirror 14 which can be adjusted by means of stepper motors, which is arranged in the beam path of the laser 13 and deflects the laser beam 12 onto one of the near-field light sources depending on the position of the mirror 14.
- FIG. 3 finally shows a further exemplary embodiment of the invention, in which the excitation of the individual light sources also takes place with a laser 15.
- the semiconductor board 1 is again the other components
- FIG. 1 and 2 - shows greatly enlarged.
- the excitation of the individual near field light sources does not take place sequentially, but simultaneously.
- an optical fiber bundle 16 is provided, the individual fibers 16.1 to 16.6 of which each guide the light generated by the laser 15 to one of the near-field light sources.
- the embodiment of the invention is not limited to the preferred exemplary embodiments described above. le. Rather, a number of variants are conceivable which make use of the solution shown even in the case of fundamentally different types.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Microscoopes, Condenser (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
Source lumineuse de champ proche, destinée notamment à l'éclairage de fond d'un échantillon (4) dans un microscope, comportant un élément support (1) pourvu d'un canal creux (2) sensiblement parallèle à la direction d'émission de la lumière, et au moins partiellement rempli d'un matériau agissant par excitons (3), ainsi qu'une source lumineuse (6) disposée sur le côté de l'élément support opposé à l'échantillon, permettant d'exciter le matériau agissant par excitons (3) de façon qu'il émette de la lumière. L'élément support (1) comporte une pluralité de canaux creux contigus, sensiblement parallèles à la direction d'émission de la lumière et au moins partiellement remplis d'un matériau agissant par excitons.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19601109A DE19601109A1 (de) | 1996-01-13 | 1996-01-13 | Zweidimensionale optische Nahfeldlichtquelle |
DE19601109.4 | 1996-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1997025644A2 true WO1997025644A2 (fr) | 1997-07-17 |
WO1997025644A3 WO1997025644A3 (fr) | 1997-09-04 |
Family
ID=7782716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1997/000059 WO1997025644A2 (fr) | 1996-01-13 | 1997-01-10 | Source lumineuse de champ proche |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE19601109A1 (fr) |
WO (1) | WO1997025644A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000072076A1 (fr) * | 1999-05-21 | 2000-11-30 | Brugger Juergen | Extremite de sonde transparente a la lumiere et son procede de production |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19929875A1 (de) * | 1999-06-29 | 2001-01-04 | Laser & Med Tech Gmbh | Verfahren und Vorrichtung zur schnellen nahfeldoptischen Untersuchung von biologischen Objekten mittels Partikelstrahlen-angeregten Lichtquelle |
JP2003524779A (ja) | 2000-01-20 | 2003-08-19 | レーザー− ウント メディツィン−テヒノロギー ゲゼルシャフト ミット ベシュレンクテル ハフツング ベルリン | 近接場光学方法で生物対象を分析する装置 |
JP5317133B2 (ja) * | 2008-06-03 | 2013-10-16 | 国立大学法人静岡大学 | 光学顕微鏡 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659429A (en) * | 1983-08-03 | 1987-04-21 | Cornell Research Foundation, Inc. | Method and apparatus for production and use of nanometer scale light beams |
US5148307A (en) * | 1988-07-17 | 1992-09-15 | Raoul Kopelman | Nanometer dimension optical device with microimaging and nanoillumination capabilities |
-
1996
- 1996-01-13 DE DE19601109A patent/DE19601109A1/de not_active Withdrawn
-
1997
- 1997-01-10 WO PCT/DE1997/000059 patent/WO1997025644A2/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659429A (en) * | 1983-08-03 | 1987-04-21 | Cornell Research Foundation, Inc. | Method and apparatus for production and use of nanometer scale light beams |
US5148307A (en) * | 1988-07-17 | 1992-09-15 | Raoul Kopelman | Nanometer dimension optical device with microimaging and nanoillumination capabilities |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000072076A1 (fr) * | 1999-05-21 | 2000-11-30 | Brugger Juergen | Extremite de sonde transparente a la lumiere et son procede de production |
Also Published As
Publication number | Publication date |
---|---|
WO1997025644A3 (fr) | 1997-09-04 |
DE19601109A1 (de) | 1997-07-17 |
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