WO1997021986A1 - Microdetecteurs a membranes au silicium et leur procede de fabrication - Google Patents

Microdetecteurs a membranes au silicium et leur procede de fabrication Download PDF

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Publication number
WO1997021986A1
WO1997021986A1 PCT/CH1996/000396 CH9600396W WO9721986A1 WO 1997021986 A1 WO1997021986 A1 WO 1997021986A1 CH 9600396 W CH9600396 W CH 9600396W WO 9721986 A1 WO9721986 A1 WO 9721986A1
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WO
WIPO (PCT)
Prior art keywords
substrate
silicon wafer
silicon
microsensor
membrane
Prior art date
Application number
PCT/CH1996/000396
Other languages
German (de)
English (en)
Inventor
Stephan Trautweiler
Jürg Stahl
Original Assignee
Micronas Semiconductor S.A.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micronas Semiconductor S.A. filed Critical Micronas Semiconductor S.A.
Publication of WO1997021986A1 publication Critical patent/WO1997021986A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0069—Electrical connection means from the sensor to its support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6845—Micromachined devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/6847—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow where sensing or heating elements are not disturbing the fluid flow, e.g. elements mounted outside the flow duct
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

Definitions

  • the invention relates to a method for producing microsensors, which are each provided with at least one silicon membrane, and to a microsensor provided with a silicon membrane.
  • a large number of microsensors which are provided with micromechanically manufactured silicon membranes, are successfully used today to measure gas concentration, flow, viscosity, air humidity, pressure, sound and more.
  • the function of the silicon membrane is firstly to reduce heat losses via the contact points to a substrate of a heating element located on the silicon membrane and secondly to reduce the mechanical rigidity of the transducer, both with the aim of optimizing the sensitivity of the sensor.
  • a substrate serves as a support for the silicon membrane and thus significantly influences the mechanical stability and the sensitivity of the sensor to mechanical stresses, which often occur when the sensor is installed in its measurement environment.
  • Another function of the substrate is to electrically or thermally isolate the silicon membrane or to contact the surroundings. , 9 -
  • a frequently used method for producing sensors with thin silicon membranes is anisotropic etching from single-crystalline silicon wafers.
  • Single-crystalline silicon has excellent mechanical properties and can be anisotropically etched using suitable etching agents, for example potassium hydroxide or ethylenediamine pyrocatechol.
  • suitable etching agents for example potassium hydroxide or ethylenediamine pyrocatechol.
  • the invention is based on the object of specifying a method for producing a microsensor provided with a silicon membrane and the microsensor which can be produced using the method, the sensor surface of which is optimally used and the silicon membrane exterior to be exposed to the measurement signal does not contain any delicate electronic functional units and is at the same time flat .
  • a further independent patent claim relates to an intermediate sensor product that can be produced using the method according to the invention.
  • the basic idea of the method according to the invention is to apply a silicon wafer to a substrate in such a way that its processed side faces the substrate and is therefore protected.
  • the thickness of the silicon wafer can then be reduced from the outside to a small silicon membrane thickness.
  • the starting material for the silicon membrane is - as in the known methods - a single-crystalline silicon wafer.
  • the required electronic functional units are first integrated using known processes. Spacers are attached to one side of a substrate and / or one side of the silicon wafer to be protected. brings or molded out of substrate and / or silicon membrane.
  • the silicon wafer and the substrate are then joined together in such a way that the at least one side of the silicon wafer provided with electronic functional units, hereinafter referred to as the “inner side”, faces the substrate.
  • the spacers ensure that voids are created between the substrate and the silicon wafer.
  • the thickness of the entire silicon wafer can then be reduced from the outside to a small silicon membrane thickness, so that a silicon membrane is formed from the silicon wafer.
  • the individual sensors can be separated from one another, housed in fixed assemblies and provided with electrical connecting means using known methods.
  • a first advantage of the method according to the invention is the optimal use of the sensor surface. Virtually the entire sensor area can be used for the silicon membrane because the substrate does not have to have high, oblique etching walls.
  • a second advantage of the method according to the invention results in particular when it is used for the production of microsensors which measure the properties of fluids.
  • the microsensors according to the invention combine the two requirements of separating the processed silicon membrane inside from the fluid and flush installation.
  • the silicon membrane outside has no etching pits and is flat. The fluid can therefore flow over the silicon membrane outside without being disturbed by it, and at the same time the processed silicon membrane inside is also protected.
  • the substrate has holes at most locally; it is not necessary to remove all of the material underneath the silicon membrane. This gives the substrate increased mechanical strength and thus it is less susceptible to parasitic voltages which occur, for example, when gluing - a problem that plays an important role, especially with pressure sensors.
  • the possibility of using a glass substrate with the method according to the invention opens up further advantages over conventionally anisotropically etched silicon substrates: glass is a good thermal and electrical insulator, which has a positive effect particularly in the case of thermal sensors.
  • Fig. 1 shows a schematic cross section through a conventional
  • FIG. 14 shows a schematic plan view of the silicon membrane inside of a flow sensor according to the invention and 15 is a perspective, partially disclosed schematic view of a flow sensor according to the invention installed in a flow channel.
  • FIG. 1 illustrates the state of the art with a cross section through a schematically illustrated microsensor produced by known methods.
  • a single-crystal (100) -oriented silicon wafer 1 is typically used as the starting material for such a sensor.
  • the electronic function units 3 required for supply, conversion, signal processing and output are first integrated; This is done by processes such as epitaxy, oxidation, photolithography, diffusion, ion implantation, metallization, etc., which are common in microelectronics.
  • the silicon wafer is then, from the other side 4, hereinafter referred to as "outside", at certain points 5 anisotropically etched down to a desired thickness t (typically a few to a few tens of micrometers), for example with potassium hydroxide (KOH) or ethylenediamine pyrocatechol (EDP).
  • KOH potassium hydroxide
  • EDP ethylenediamine pyrocatechol
  • Special materials may also have to be used Exercise or strengthen the actual converter function, are applied to the inside 2.
  • the silicon wafer 1 is divided into the individual sensors; these are then converted into suitable ones fixed modules 7 housed and provided with electrical connecting means 8.
  • the silicon wafer can only a part of the surface can be used for the silicon membrane 6.
  • FIG. 1 A further disadvantage can also be seen from FIG. 1. If the silicon membrane structure is used, for example, for determining the flow rate of a fluid, the possibly corrosive fluid can attack the electronic functional units 3 and electrical connection means 8 on the inside of the silicon membrane 2 and destroy the sensor. If the fluid is allowed to flow over the outer side 4 in order to avoid this disadvantage, a new problem appears: the etching pit 5 on the outer side 3 disturbs the fluid flow and leads to eddies which can severely impair the sensor function.
  • FIGS. 2-8 each show in cross section the manufacture of a microsensor according to the invention in a preferred variant of the method according to the invention.
  • the process consists of seven steps. These are only the first three steps for the inventive one Procedure necessary; the other procedural steps are optional.
  • the manufacture of two identical sensors is shown.
  • modern integration methods known from microelectronics it is possible to manufacture many sensors at the same time; typical length dimension L of microsensors today is in the millimeter range and could be reduced in the future.
  • a single-crystalline silicon wafer 1 is used as the starting material for the sensor membranes.
  • one side 2 hereinafter referred to as "inside" integrates the electronic functional units 3 required for supply, conversion, signal processing and output; this is done by processes customary in microelectronics, such as epitaxy, oxidation, photolithography, diffusion, ion implantation, metallization, etc.
  • the inside 2 is the side which is to be protected from possibly corrosive fluids when the microsensor is subsequently used.
  • FIG. 2 shows an exemplary embodiment of the silicon wafer 1 or a part thereof after the first method step.
  • the electronic functional units 3 are, for example, diffusion layers 3.1, metal layers 3.2, oxide layers 3.3, silicon nitride layers 3.4, etc .; for didactic reasons they are drawn exaggeratedly thick in relation to the silicon membrane in all figures.
  • the silicon wafer 1 can additionally be preconditioned for a special sensor function in this method step. If desired, additional special materials which exercise or reinforce the actual converter function are applied to the inside 2 in this method step.
  • spacers 10 are attached to one side 13 of a substrate and / or the inside 2 of the silicon wafer 1 or from substrate 11 and / - or silicon membrane 6 molded out. Firstly, these ensure that the silicon wafer 1 does not touch a substrate 11 at the intended locations, and secondly, they provide contact areas for joining the silicon wafer 1 and substrate 11 together.
  • the spacers 10 can, for example, as shown in FIG. 3, be molded out of the substrate 11 by providing one side 12 of the substrate with depressions 13 of depth d (typically a few to a few hundred micrometers). The recesses 13 will form cavities between the silicon membrane and the substrate after the silicon wafer 1 and substrate 11 have been joined together (third method step).
  • Through holes 14 can also be made in the substrate 11 at the same time as the depressions 13. These serve, for example, to accommodate electrical connecting means.
  • the position and size of the depressions 13 and holes 14 on the substrate 11 must be matched to the electronic functional units 3 on the silicon wafer 1.
  • the substrate 11 can preferably consist of glass or ceramic, silicon or another material.
  • Glass as a substrate material has the advantage that it is a good thermal and electrical insulator, which has a positive effect especially with thermal sensors.
  • the recesses 13 and holes 14 are made by chemical or mechanical ablation processes such as isotropic etching with hydrofluoric acid (HF, BHF) or drilling in the Subsrat. With these processing methods it is possible to obtain almost vertical walls in suitable materials and to optimally utilize practically the entire sensor surface.
  • the substrate 11 Because the substrate 11 only has holes 14 locally and not all of the material underneath the silicon wafer 1 is removed, the substrate is given increased mechanical strength and is therefore less susceptible to parasitic mechanical stresses which occur, for example, when bonding in the sixth process step ⁇ kicking - a problem that is particularly important with pressure sensors.
  • the silicon wafer 1 and the substrate 11 are joined to one another and fixed, that is to say connected to one another, so that the spacers 10 lie between the silicon wafer and the substrate and cavities 13 of thickness d are formed between the silicon wafer and the substrate. It is crucial that the inside 2 of the silicon wafer 1 to be protected faces the substrate, as shown in FIG. 4; Thereby the protection of the electronic functional units 3 against a possibly corrosive fluid is achieved.
  • silicon wafer 1 and substrate 11 are positioned on one another with respect to displacement and rotation; this can be accomplished, for example, with a wafer stepper with an accuracy in the order of magnitude of micrometers or better.
  • silicon wafer 1 and substrate 11 only adhere to one another at the edge of each sensor. The remaining parts of the silicon wafer 1 hang over the cavities 13.
  • a stable, permanent adhesion between the silicon wafer 1 and a substrate 11 made of glass is achieved, for example, by the known technique of "anodic bonding". If the substrate 11 consists of silicon, the known technique of "silicon fusion bonding" can be used for fixing. Another possibility of fixing silicon wafer 1 and substrate 11 to one another is to use soldering methods. Silicon wafer 1 and substrate 11 can optionally be joined together in air, another atmosphere or in a vacuum; the corresponding gas or vacuum will remain in the cavities 13 between the silicon wafer and the substrate if the cavities are closed.
  • An interesting way of influencing the mechanical tension of the silicon membrane 6 (formed in the fifth method step) is to use a glass substrate 11 with a thermal expansion coefficient that differs from that of silicon.
  • a mechanical stress is generated in the cooled state, which can be used to, for example, relate to original mechanical stresses in the silicon wafer 1 or in the subsequent silicon membrane 6 to compensate.
  • a fourth method step the thickness of the entire silicon wafer 1 is reduced from the outside 4 to a desired thickness t (from typically a few to a few tens of micrometers), as shown in FIG. 5.
  • the silicon wafer 1 thus becomes a thin silicon membrane 6, the processed inner side 2 of which faces the substrate 11. (For functional reasons, the electronic functional units 3 and the silicon membrane 6 are drawn in excessively thick relation to the other elements.)
  • the silicon membrane 6 is partially supported and fastened on the spacers 10. If the cavities 13 between the silicon membrane 6 and the substrate 11 are thin enough, they also serve as stoppers and can prevent the silicon membrane from breaking if the excess pressure on the outside 4 is too high.
  • Etching methods for example anisotropic etching in potassium hydroxide (KOH), in ethylenediamine pyrocatechol (EDP) or plasma etching, are preferably used to reduce the thickness of the silicon wafer 1.
  • the silicon membrane thickness t can be controlled by known etching stop methods, for KOH, for example, the electrochemical etching stop method.
  • Another option for reducing the thickness is mechanical Processes, for example grinding or polishing.
  • the thickness reduction, ie the fourth method step can be dispensed with if a sufficiently thin silicon wafer 1 is used from the start.
  • electronic functional units 3 can be applied to both sides 2, 4 of the silicon wafer 1.
  • the individual independent units 15, consisting of at least one processed silicon membrane 6 and a substrate 11, which are adhered to one another via spacers 10, are referred to below as "sensor intermediate products".
  • the individual intermediate sensor products 15 are separated from one another and from any remaining pieces 16.
  • Figure 6 shows two separate sensor intermediate products 15. The separation is accomplished, for example, with special saws or by breaking.
  • the individual intermediate sensor products 15 are accommodated in fixed assemblies 7.
  • These assemblies 7 give the sensors mechanical stability and protect them from undesired environmental influences; at the same time, however, they must ensure that the input signal to be measured really reaches the sensor converter.
  • the solid assemblies can be, for example, ceramic substrates to which the sensor intermediate products 15 are glued. In Figure 7, only one glued on sensor intermediate 15 is shown; the same procedure is followed with all other sensor intermediate products.
  • the silicon membranes 6 are electrically contacted and provided with electrical connecting means 8.
  • FIG. 8 shows a finished sensor produced by the method according to the invention.
  • Electrical connection means for example contact wires, can run outwards from the silicon membrane inside 2 through the holes 14 in the substrate 11 and through holes 18 in the fixed assembly 7.
  • piezoresistive pressure sensor as an example of the use of a microsensor according to the invention.
  • the silicon membrane 6 can consist, for example, of n-type silicon and the strain gauges 3.1, 3.1 'of p-type silicon. Due to an external pressure p, the silicon membrane 6 experiences the schematically represented deformation, which leads to a change in the length of the strain gauges 3.1, 3.1 '. This change in length is converted by means of the piezoresistive effect into an electrical output signal, which is a measure of the pressure p. The output signal is conducted to the outside with electrical connection means 8 through a through hole 14.
  • strain gauge 3.1 Electrical connecting means 8 and through hole 14 are shown only for a strain gauge 3.1; for the other strain gauge 3.1 ', they can lie in a different sectional plane. Of course, more than two strain gauges can be integrated on the silicon membrane 6. Some variants of the method according to the invention are shown below with reference to FIGS. 10-13. Only the intermediate sensor products 15 are drawn after the fifth method step; the fixed assemblies 7 and the electrical connection means 8 are omitted in these figures.
  • FIG. 10 shows an intermediate sensor product 15 with an additional spacer 10 ', which is located inside the sensor, i. H. is not located on a sensor edge 19.
  • This spacer 10 ′ supports the silicon membrane 6 and gives it additional mechanical strength, which could be desirable, for example, in the vicinity of the electrical contacts 17.
  • All spacers 10, 10 ' can be produced, for example, in the second method step by suitable structuring of the substrate 11. They can be designed as "blocks" extended in two dimensions, as “walls” extended in one dimension or as thin “columns”.
  • the spacers 10, 10 'shown in FIG. 11 have the same function as the spacers in FIG. 9.
  • the spacers 10, 10' in FIG. 10 were, however, simultaneously with the first method step, by applying and structuring an additional layer on the inside 2 the silicon wafer 1 manufactured.
  • This additional layer can consist, for example, of an oxide, a metal or polycrystalline or monocrystalline silicon.
  • Spacers 10, 10 'produced in this way can also be applied to the substrate 11 instead of to the silicon wafer 1.
  • spacers 10, 10 ′ can be applied both to the silicon wafer 1 and to the substrate 11.
  • the production of spacers 10, 10 'from an additional Layer has the advantage that it saves the production of depressions 13 in the substrate 11.
  • FIG. 12 shows an arrangement for the capacitive measurement of distance changes ⁇ d.
  • the means for measuring changes in distance ⁇ d are electrodes 20 on the substrate 11 and counter electrodes 20 'on the silicon membrane 6.
  • the electrodes 20 of any shape are applied to the flat substrate surface 12 and are electrically contacted outside the silicon membrane 6.
  • ⁇ p in pressure p
  • ⁇ d condenser microphone
  • Fig. 12 two holes 14, 14 'are made in the substrate 11 as an example; the holes allow the air to flow out of the cavity 13 and increase the flexibility of the silicon membrane 6 and shorten the reaction time of the pressure sensor.
  • the tunnel effect Another option (not shown in the drawing) for measuring distance changes ⁇ d is provided by the tunnel effect.
  • at least one ultra-fine tip is produced in the first and / or second method step on the side 2 of the silicon wafer 1 provided with the electronic functional units 3 and / or on a side 12 of the substrate 11.
  • an electrical voltage between the Tip and the opposite part created.
  • the tunnel current is a measure of the distance between the tip and the opposite part 6 or 11.
  • the substrate 11 consists only of spacers 10 in the form of walls along the sensor edges 19.
  • the through hole 14 in the substrate 11 is thus large and is not only located under the electrical contacts 17 on the inside of the silicon membrane 2 , but under the entire silicon membrane 6.
  • This embodiment can also be viewed as a borderline case in FIG. 6, in which the depth d of the recess 13 is equal to the substrate thickness T. The measures for this variant are taken in the second process step.
  • FIGS. 14 and 15 finally show, as a further example, a microsensor according to the invention, which is used as a flow sensor.
  • FIG. 14 shows the inside 2 of the silicon membrane 6 of the flow sensor.
  • the heating resistors 21 consist, for example, of p-type silicon
  • the thermopile 22 for example, of strips of p- conductive silicon 3.1 and aluminum 3.2.
  • Contact surfaces 23 made of aluminum are used to contact these elements.
  • the fluid to be measured should flow in the direction indicated by the arrows 24 over the outside of the silicon membrane (not shown); the silicon membrane should be thin in order to ensure optimal heat transfer between the fluid and the silicon membrane inside 2.
  • the sensor works as follows: the heating resistors 21, 21 'are heated with the same heating currents and the output signal of the thermopile 22 is read out. If the flow 24 is equal to zero, the temperature difference measured by the thermopile 22 is also zero. If a fluid flows over the outside of the silicon membrane, part of the heat is transferred from the silicon membrane 6 to the fluid on its way between the heating resistors 21 and 21 '. This creates a temperature difference between the two heating resistors 21, 21 ', which is measured by the thermopile 22 by means of the thermoelectric effect. The amount of this temperature difference is a measure of the flow rate 24, its sign indicates the direction of flow.
  • FIG. 15 shows the perspective, partially disclosed view of the flow sensor according to the invention. It is installed in a flow channel 25 and measures, for example, the flow rate of a fluid through the channel, represented by the arrows 24.
  • the sensor membrane 6 is flush with the flow channel 21 installed and does not disturb the flow 22 through the flow channel, and at the same time its electronics on the inside of the silicon membrane 2 are protected from the possibly corrosive fluid.
  • the method according to the invention can also be used to produce a sensor for different sizes, for example for flow and pressure.
  • the silicon membrane can be divided into several sub-membranes, for example by spacers 10 '; each sub-membrane can measure a different size using a suitable transducer principle.
  • the electronics required for signal processing can also be integrated on the same silicon membrane 6.
  • the method according to the invention is used to manufacture microsensors, each with a sensor surface that is partially formed by outer sides 4 of at least one silicon membrane 6; the silicon membrane 6 carries electronic functional units 3, electrical connecting means 8 being created for the electrical connection of the electronic functional units 3.
  • a silicon wafer 1 provided with electronic functional units 3 on at least one inner side 2 is connected to a substrate 11.
  • the inside 2 of the silicon wafer 1 faces the substrate 11, and spacers 10, 10 ′ are provided between the substrate and the silicon wafer in such a way that cavities 13 are formed between the substrate 11 and the silicon wafer.
  • the silicon wafer 1 either has the thickness t of a silicon membrane 6 or is thicker than a silicon membrane 6 and is reduced to the silicon membrane thickness t after being joined to the substrate 11.
  • a microsensor obtainable by the method according to the invention has a sensor surface, which is partially formed by the outside of at least one silicon membrane 6, and electrical connection means 8.
  • the silicon membrane 6 has at least on its inside 2 electronic function units 3.
  • the silicon membrane 6 is applied to a substrate 11, spacers 10, 10 'being positioned between the silicon membrane 6 and the substrate 11 such that there are cavities 13 between the silicon membrane 6 and the substrate 11.
  • An intermediate sensor product according to the invention has a silicon wafer 1 applied to a substrate 11 with electronic functional units 3 at least on its inside 2 facing the substrate 11 and with cavities 13 and spacers 10, 10 'between the silicon wafer 1 and the substrate 11.
  • the silicon wafer 1 and the substrate 11 together form a plurality of microsensors without electrical connection means 8.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Pressure Sensors (AREA)

Abstract

Le procédé de fabrication d'un microdétecteur composé d'une plaquette en silicium monocristalline (1) et d'un substrat (11) comprend les étapes suivantes: des unités fonctionnelles électroniques (3) sont appliquées sur la face intérieure (2) de la plaquette en silicium (1); des espaceurs (10) sont réalisés, par exemple par formage de cavités (13) dans le substrat (11); des trous (14) sont faits dans le substrat; la plaquette (1) est assemblée avec le substrat (11), de telle façon que la face intérieure (2) de la plaquette soit tournée vers le substrat; l'épaisseur de la plaquette (1) est réduite à partir de la face extérieure (4), de manière à former une mince membrane de silicium (6); les détecteurs individuels ainsi produits sont séparés; ces détecteurs sont montés sur des composants fixes (7); des éléments de connexion électrique (8) sont appliqués à travers les trous (14). Un microdétecteur fabriqué suivant ce procédé utilise la surface de détecteur de façon optimale, du fait qu'on dispose pratiquement de toute la surface de détecteur pour la membrane de silicium (6). Il satisfait en outre aux deux impératifs suivants: séparation de la surface intérieure traitée (2) de la membrane du milieu à mesurer et montage du détecteur à fleur.
PCT/CH1996/000396 1995-12-08 1996-11-11 Microdetecteurs a membranes au silicium et leur procede de fabrication WO1997021986A1 (fr)

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CH3469/95 1995-12-08
CH346995 1995-12-08

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WO1997021986A1 true WO1997021986A1 (fr) 1997-06-19

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WO2001081872A1 (fr) * 2000-04-25 2001-11-01 Sensirion Ag Procede et dispositif pour la mesure de l'ecoulement d'un liquide
EP1333255A1 (fr) * 2000-10-17 2003-08-06 Yamatake Corporation Detecteur de flux
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WO2004104541A1 (fr) * 2003-05-16 2004-12-02 Rosemount Inc. Capsule de capteur de pression
WO2004106864A1 (fr) * 2002-12-16 2004-12-09 Honeywell International Inc. Detecteur de circulation d'air pour systeme de climatisation/ventilation
EP1591760A1 (fr) * 2004-04-30 2005-11-02 Omron Corporation Débitmètre
EP1719981A1 (fr) * 2004-02-24 2006-11-08 Fujikin Incorporated Capteur de fluide de metal anticorrosif et dispositif d'alimentation de fluide
EP1772731A2 (fr) * 2005-10-07 2007-04-11 Micronas GmbH Dispositif de capteur intégré
US8371175B2 (en) 2009-10-01 2013-02-12 Rosemount Inc. Pressure transmitter with pressure sensor mount
DE102012209225A1 (de) * 2012-05-31 2013-12-05 Ifm Electronic Gmbh Thermischer Strömungssensor
DE102012224284A1 (de) 2012-12-21 2014-06-26 Heraeus Precious Metals Gmbh & Co. Kg Dünne Metallmembran mit Träger

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EP1065476A1 (fr) * 1999-06-30 2001-01-03 Hitachi, Ltd. Capteur thermique de débit d'air
US6666082B2 (en) 1999-06-30 2003-12-23 Hitachi, Ltd. Thermal airflow sensor
LU90485B1 (de) * 1999-12-13 2001-06-14 Delphi Tech Inc Massendurchflussmesser
EP1114985A1 (fr) * 1999-12-13 2001-07-11 Delphi Technologies, Inc. Detecteur thermique d'écoulement
WO2001081872A1 (fr) * 2000-04-25 2001-11-01 Sensirion Ag Procede et dispositif pour la mesure de l'ecoulement d'un liquide
DE10191578B4 (de) * 2000-04-25 2016-02-04 Sensirion Holding Ag Vorrichtung zum Messen des Flusses einer Flüssigkeit
US6763710B2 (en) 2000-04-25 2004-07-20 Sensirion Ag Method and device for measuring the flow of a fluid
EP1333255A4 (fr) * 2000-10-17 2006-08-16 Yamatake Corp Detecteur de flux
EP1333255A1 (fr) * 2000-10-17 2003-08-06 Yamatake Corporation Detecteur de flux
US7117736B2 (en) 2000-10-17 2006-10-10 Yamatake Corporation Flow sensor
US6776817B2 (en) 2001-11-26 2004-08-17 Honeywell International Inc. Airflow sensor, system and method for detecting airflow within an air handling system
WO2004106864A1 (fr) * 2002-12-16 2004-12-09 Honeywell International Inc. Detecteur de circulation d'air pour systeme de climatisation/ventilation
JP2006528365A (ja) * 2003-05-16 2006-12-14 ローズマウント インコーポレイテッド 圧力センサカプセル
WO2004104541A1 (fr) * 2003-05-16 2004-12-02 Rosemount Inc. Capsule de capteur de pression
US6883380B2 (en) 2003-05-16 2005-04-26 Rosemount Inc Pressure sensor capsule
JP4815350B2 (ja) * 2003-05-16 2011-11-16 ローズマウント インコーポレイテッド 圧力センサカプセル
EP1719981A4 (fr) * 2004-02-24 2007-11-07 Fujikin Kk Capteur de fluide de metal anticorrosif et dispositif d'alimentation de fluide
EP1719981A1 (fr) * 2004-02-24 2006-11-08 Fujikin Incorporated Capteur de fluide de metal anticorrosif et dispositif d'alimentation de fluide
US7100440B2 (en) 2004-04-30 2006-09-05 Omron Corporation Flow meter
EP1591760A1 (fr) * 2004-04-30 2005-11-02 Omron Corporation Débitmètre
EP1772731A2 (fr) * 2005-10-07 2007-04-11 Micronas GmbH Dispositif de capteur intégré
EP1772731A3 (fr) * 2005-10-07 2007-08-08 Micronas GmbH Système de capteur intégré
US8371175B2 (en) 2009-10-01 2013-02-12 Rosemount Inc. Pressure transmitter with pressure sensor mount
DE102012209225A1 (de) * 2012-05-31 2013-12-05 Ifm Electronic Gmbh Thermischer Strömungssensor
DE102012224284A1 (de) 2012-12-21 2014-06-26 Heraeus Precious Metals Gmbh & Co. Kg Dünne Metallmembran mit Träger
US10973420B2 (en) 2012-12-21 2021-04-13 Heraeus Deutschland GmbH & Co. KG Thin metal membrane with support

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