WO1997011482A3 - Elimination d'halogenes et de vernis photosensible de tranches - Google Patents

Elimination d'halogenes et de vernis photosensible de tranches Download PDF

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Publication number
WO1997011482A3
WO1997011482A3 PCT/US1996/014054 US9614054W WO9711482A3 WO 1997011482 A3 WO1997011482 A3 WO 1997011482A3 US 9614054 W US9614054 W US 9614054W WO 9711482 A3 WO9711482 A3 WO 9711482A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
plasma
halogen
removal
photoresist material
Prior art date
Application number
PCT/US1996/014054
Other languages
English (en)
Other versions
WO1997011482A2 (fr
Inventor
David Heine
Wilbur G Catabay
Original Assignee
Lsi Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lsi Logic Corp filed Critical Lsi Logic Corp
Publication of WO1997011482A2 publication Critical patent/WO1997011482A2/fr
Publication of WO1997011482A3 publication Critical patent/WO1997011482A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Abstract

L'invention concerne un procédé et un appareil pour éliminer les traces résiduelles (9) de vernis photosensible et d'halogènes après l'attaque d'une tranche de polysilicium ou d'une tranche métallisée (15, 35, 55). Les portions exposées de la tranche (8) non couvertes par le vernis photosensible sont soumises à une attaque par un premier plasma contenant un halogène, tel que HBr ou CmHnBr2m+2-n' pendant une première durée déterminée. La tranche est ensuite exposée à un second plasma contenant du H2O comme constituant primaire, pendant une seconde durée déterminée. Ce second plasma peut également contenir O2, H2, OH et/ou H2O2 comme autres constituants. Les radicaux hydrogène et les autres radicaux réagissent avec le vernis photosensible résiduel et avec tout halogène libre ou tout composé halogéné résiduel sur la tranche, avec formation de produits qui sont éliminés de la tranche. Chaque plasma (22, 44, 62, 64) est maintenu sous la forme d'un corps approximativement plan, en lui imposant un champ magnétique variable dans le temps et éventuellement un champ électrique variable dans le temps, dans des directions approximativement perpendiculaires à la surface traitée de la tranche. Le procédé d'attaque et d'élimination des résidus halogénés et de résidus de vernis photosensible peut s'effectuer dans deux chambres séparées (11, 31) ou dans une chambre unique (51). La tranche est à des températures qui sont différentes dans les deux opérations.
PCT/US1996/014054 1995-09-05 1996-09-03 Elimination d'halogenes et de vernis photosensible de tranches WO1997011482A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52429695A 1995-09-05 1995-09-05
US524,296 1995-09-05

Publications (2)

Publication Number Publication Date
WO1997011482A2 WO1997011482A2 (fr) 1997-03-27
WO1997011482A3 true WO1997011482A3 (fr) 1997-05-15

Family

ID=24088608

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/014054 WO1997011482A2 (fr) 1995-09-05 1996-09-03 Elimination d'halogenes et de vernis photosensible de tranches

Country Status (1)

Country Link
WO (1) WO1997011482A2 (fr)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
US9572526B2 (en) 2009-05-13 2017-02-21 Sio2 Medical Products, Inc. Apparatus and method for transporting a vessel to and from a PECVD processing station

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Publication number Priority date Publication date Assignee Title
US6548230B1 (en) * 1998-09-18 2003-04-15 Taiwan Semiconductor Manufacturing Co., Ltd Method for in-situ removal of photoresist and sidewall polymer
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
US6734120B1 (en) * 1999-02-19 2004-05-11 Axcelis Technologies, Inc. Method of photoresist ash residue removal
US6852636B1 (en) 1999-12-27 2005-02-08 Lam Research Corporation Insitu post etch process to remove remaining photoresist and residual sidewall passivation
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
JP6095678B2 (ja) 2011-11-11 2017-03-15 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 薬剤パッケージ用の不動態化、ｐＨ保護又は滑性皮膜、被覆プロセス及び装置
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
WO2014071061A1 (fr) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Procédés d'inspection de revêtement
EP2920567B1 (fr) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Procédé et appareil pour détecter des caractéristiques d'intégrité de revêtement de barrière rapide
EP2925903B1 (fr) 2012-11-30 2022-04-13 Si02 Medical Products, Inc. Contrôle de l'uniformité de dépôt chimique en phase vapeur activé par plasma (pecvd) sur des seringues médicales, des cartouches et analogues
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
EP2961858B1 (fr) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Seringue revetu.
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP3693493A1 (fr) 2014-03-28 2020-08-12 SiO2 Medical Products, Inc. Revêtements antistatiques pour récipients en plastique
CN116982977A (zh) 2015-08-18 2023-11-03 Sio2医药产品公司 具有低氧气传输速率的药物和其他包装
US10504746B2 (en) 2016-04-12 2019-12-10 Applied Materials, Inc. HKMG integration
US10903065B2 (en) * 2017-05-12 2021-01-26 Lam Research Corporation Halogen removal module and associated systems and methods
CN114823297B (zh) * 2022-04-19 2023-01-31 度亘激光技术（苏州）有限公司 光刻胶去除工艺及半导体制造工艺

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US5016332A (en) * 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292384A (en) * 1977-09-30 1981-09-29 Horizons Research Incorporated Gaseous plasma developing and etching process employing low voltage DC generation
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US5016332A (en) * 1990-04-13 1991-05-21 Branson International Plasma Corporation Plasma reactor and process with wafer temperature control
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9572526B2 (en) 2009-05-13 2017-02-21 Sio2 Medical Products, Inc. Apparatus and method for transporting a vessel to and from a PECVD processing station
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging

Also Published As

Publication number Publication date
WO1997011482A2 (fr) 1997-03-27

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