WO1996042101A1 - Source d'electrons et ses applications - Google Patents

Source d'electrons et ses applications Download PDF

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Publication number
WO1996042101A1
WO1996042101A1 PCT/IB1996/000573 IB9600573W WO9642101A1 WO 1996042101 A1 WO1996042101 A1 WO 1996042101A1 IB 9600573 W IB9600573 W IB 9600573W WO 9642101 A1 WO9642101 A1 WO 9642101A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron
electrode
perforated
carbon nanotube
nanotube film
Prior art date
Application number
PCT/IB1996/000573
Other languages
English (en)
Inventor
Walter A. Deheer
Daniel Ugarte
André CHATELAIN
Original Assignee
Ecole Polytechnique Federale De Lausanne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale De Lausanne filed Critical Ecole Polytechnique Federale De Lausanne
Priority to AU57770/96A priority Critical patent/AU5777096A/en
Publication of WO1996042101A1 publication Critical patent/WO1996042101A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30403—Field emission cathodes characterised by the emitter shape
    • H01J2201/30434—Nanotubes

Definitions

  • This invention relates to an electron source and to applications of the same.
  • Electron sources have a broad spectrum of applications. They are used for example to provide the electrons for the electron guns in cathode ray tubes, X-ray tubes, in electron microscopes and for various research purposes such as spectroscopies involving electron beams.
  • Conventional electron sources are usually of the thermionic type, where a material is heated to high temperatures thereby causing the evaporation of electrons from the surface.
  • electron sources are also of the field emission type where electrons are extracted at high voltages from sharp tips. The electron energy spread from these tips is narrower than that from thermionic emitters.
  • a conducting rod with a sharp tip will emit electrons when the electric field at the tip is sufficiently strong. Strong fields will occur if the tip opposes a counter electrode and a voltage is applied between the tip and the counter electrode. The effect relies on the property that electric fields are concentrated at sharp tips hence the electric field at the tip is amplified by a factor which depends on the geometry of the emitter and its surroundings. When the electric field becomes sufficiently large, then electrons will be extracted from the tip due to a quantum mechanical tunnelling phenomenon, also known as field emission. Physically the process of field emission is described by the Fowler-Nordheim equation which relates the field emission current density from a material to the electric field strength.
  • Field emitting tips fabricated from metals operate reliably only in stringent vacuum conditions, for example less than 10-9 Torr.
  • carbon fibers with diameters on the order of 10 microns have also been shown to emit electrons by the field emission effect.
  • These fibers have the advantage that they also function in this respect under medium vacuum conditions, for example 10-6 Torr providing currents up to 10 ⁇ A, however problems with reproducible production and rapid deterioration reduces their commercial value.
  • Carbon fiber bundles have also been used for these purposes, where more than one fiber will emit electrons.
  • the aim of the invention is to remedy to the disadvantages of the existing electron sources and to provide a low cost large area ultra thin general purpose electron source, to be used for example for the production of flat two-dimensional displays.
  • the electron source according to the invention is provided with a uniform microscopically flat carbon • nanotube surface, parallel to which and close to which are one or more perforated thin conducting plates, which are electrically insulated from the uniform microscopically flat carbon nanotube surface by perforated insulating spacers.
  • microscopically flat surface here means that the roughness of the surface does not exceed 10% of the distance from the surface to the first conducting plate.
  • a negative voltage with respect to the conducting plate(s) can be applied to the uniform microscopically flat carbon nanotube surface causing electrons to be emitted from the nanotube surface. These electrons pass through the perforations in the conducting plate(s) after which they are ejected into the vacuum chamber thereby producing an electron beam.
  • the voltages applied to the nanotube surface and to the plate(s) the electron beam intensity and the energy of the constituent electrons can be varied.
  • the invention relies on the following properties of the uniform microscopically flat carbon nanotube film: (1) the field amplification factor must be very large i.e. greater than 100; (2) it is flat on the micron scale over at least 5 cm.2; (3) it is uniformly covered with carbon nanotube containing material; (4) it is electrically conducting and uniform in its electrical conductivity properties.
  • the invention further relies on the following properties of the perforated conducting plates: (1) they must be electrically insulated from the carbon nanotube surface; (2) they are preferably parallel to the carbon nanotube surfaces, over areas corresponding with the emitting surface; (3) the diameters of the perforations in the first conducting plate is preferably no greater than twice the distance between the plate and the carbon nanotube surface.
  • the invention further relies on the following properties of the insulating spacers: (1) their thickness is preferably between 1 and 100 microns; (2) they can withstand the electric fields at their surfaces without electrically breaking down.
  • the electron source according to the invention has namely the following advantages: (1) it provides an ultra thin electron source which operates at room temperature with an overall thickness ranging from not more than 20 microns to not less than 200 microns and with an area ranging from not more than 0.1 mm.2 to not less than 5 cm.2; (2) it can operate at lower electric field strengths compared with conventional field emission electron sources; (3) it operates reliably at much higher pressures, for example 10-6 Torr, compared with conventional field emission electron sources; (4) it can be used to produce very large area electron emitting surfaces; (5) it can be used to produce extremely compact electron sources; (6) its production costs are very low; (7) there are few restrictions on its geometry, for example both planar and non-planar geometries are feasible; (8) it can be used to illuminate phosphor screens at close proximity, as may be used for example, for flat cathode ray displays; (9) it can be used as an economical alternative electron source for devices which utilise conventional electron sources.
  • Other related objects and advantages of the present invention will be used at room
  • Figure 1 is a schematic cross section of a first embodiment of the electron source according to the invention.
  • Figure 2 is a diagram of the current versus voltage characteristics for the electron source of Figure 1.
  • Figure 3 is a diagram of the current output of the electron source of Figure 1 as a function of time.
  • Figure 4 is a schematic cross section of an application of the electron source according to the invention as a source of focused electrons.
  • Figure 5 is a schematic cross section of an application of the electron source according to the invention in a configuration suitable for producing modulated electron beams.
  • Figure 6 is a schematic cross section of an electron source according to the invention in a configuration suitable for monitoring and regulating the electron beam intensity.
  • Figure 7 is a top view of a first application of an electron source according to the invention to a large surface ultra flat cathode ray display.
  • Figure 8.1 is a top view of a second application of an electron source according to the invention to a large surface ultra flat cathode ray display.
  • Figure 8.2 is a cross section of the display of Figure 8.1.
  • Figures 8.3 to 8.5 are top views of the main components considered separately of the display of Figure 8.1.
  • Figure 9 is a schematic cross section of an example of electron source according to the invention using other electron optics.
  • Figure 10 is a schematic cross section of another example of electron source using the electron optics as in Figure 9.
  • the microscopically flat carbon nanotube film can be produced according to the following procedure based on the procedure described by W.A. de Heer et al. in Science, Vol. 268, page 845-847, 12 May 1995.
  • the steps involve (1) production of nanotube containing carbonaceous material, (2) dispersion of the nanotube containing carbonaceous material in a solvent, for example ethanol, (3) sedimentation of the suspension, (4) deposition of the suspension on a micropore filter, (5) pressure transfer of the deposit on a polymer substrate.
  • the steps can be: (1) production of a carbon nanotube containing material based on a process described by T.W. Ebbesen and P.M. Ajayan in Nature, Vol.
  • This procedure produces a uniform microscopically flat ⁇ aligned carbon nanotube film on the Teflon film which has a shiny black appearance and which is flat on the micron scale and uniformly coats the Teflon film with aligned carbon nanotubes over the area of the covered surface, for example 5 cm2 with an electrical resistance in the range of 200 Ohms per Square to 800 Ohms per Square, preferably 500 Ohms per Square.
  • a variant of the procedure involves: steps (1) followed by (2) followed by (3) followed by the following steps 4.1 to 4.3: (4.1) the remaining suspension is dried in a crucible and heated at a high temperature, for example 650 °C, in air, for a duration of time, for example 30 min; (4.2) the black powdery material is recovered and heated, for example to 2000 °C, in vacuum, for a duration of time, for example 30 min; (4.3) the resulting material is treated as described in (2) followed by (3), (4), (5), (6) and (7). With this procedure, the nanotubes are opened by oxidation and regraphitized and ⁇ aligned on the Teflon film, producing a uniform ⁇ aligned opened regraphitized carbon nanotube film.
  • the electron source illustrated (not to scale) in Figure 1 comprises an optically flat support 11, for example in glass, a uniform microscopically flat ⁇ aligned carbon nanotube film 12, a perforated insulating spacer 13, for example in mica, with a thickness in the range of 0.005 mm to 0.2 mm, preferably 0.02 mm, a perforated conducting thin sheet 14 with multiple perforations each which have a diameter preferably not larger than twice the spacer thickness, for example a 200 mesh (75 ⁇ m) 3 mm diameter copper electron microscope grid.
  • the spacer is bonded to the microscopically flat carbon nanotube film with a suitable adhesive, for example cyanoacrylate.
  • the perforated conducting sheet is bonded to the insulating spacer with a suitable adhesive, for example cyanoacrylate.
  • An electrical lead is connected directly to the uniform microscopically flat carbon nanotube film using a conducting adhesive, for example colloidal silver paint, and an electrical lead is connected to the perforated conducting thin metal sheet.
  • Applying a negative voltage, for example in the range of 0 V to -1000 V, to the uniform microscopically flat carbon nanotube film produces an electron beam which is detected using a metal plate 15, for example a copper plate, located between 0.1 mm to 10 cm in front of the electron source.
  • the current versus voltage curve 21 measured for an electron source as described in Figure 1 , for 1 mm.2 D f electron emitting surface, where the uniform microscopically flat carbon nanotube film was ⁇ aligned accurately follows the Fowler-Nordhiem equation (see for example C.A. Spindt et al. J. Appl. Phys. 5248 Vol. 47, No. 12, pages 5248-5263) which describes the current versus voltage characteristics for field emission.
  • Changing the insulating spacer thickness modifies the curve consistent with the Fowler-Nordheim equation so that for thinner spacers proportionally lower voltages are required to obtain the same current and for thicker spacers proportionally higher voltages are required to obtain the same current.
  • the electric field strength at the tip is about 10 times the voltage applied to the tip divided by the tip to counter electrode distance and consequently the uniform ⁇ aligned carbon nanotube film requires fields which are lower by about a factor of 100 compared with conventional tips to produce field emission.
  • the very large field amplification factor of the uniform aligned carbon nanotube films is a hitherto unknown property of the film and is essential for the functioning of the electron source according to the invention, which consequently can operate at much low voltages compared with conventional field emitters when similar emitter to counter electrode distances are used and similar current are drawn in both cases.
  • the measured current as a function of time for constant applied voltage 31 in the electrical configuration of Figure 1 indicates that the fluctuations in the current are in the order of 10%.
  • Applying a feedback regulation between the current and the voltage accomplished by passing the current through a resistor, with a resistance in the range of 100 Ohms to 1 MOhm, for example 10 kOhms, and electronically inverting and amplifying the voltage across the resistor and applying the amplified inverted voltage to the microscopically flat carbon nanotube film, and applying 0 V to the conducting plate 14, stabilizes the current to within 2% or less than 2% as shown by curve 32.
  • the electron source illustrated (not to scale) in Figure 4 is an electron source of the type shown in Figure 1 , with additional electron optics to produce an electron gun which produces a focused electron beam, which consists of the electron source as described in Figure 1 with in addition two perforated metal plates 41, 42 which have holes, for example 1 mm in diameter, separated by perforated insulating spacers 43, 44. All elements (i.e. 41, 42, 43, 44) are for example 0.2 mm thick. Applying a voltage of for example -500 V to the microscopically flat carbon nanotube film 40, -500 V to the perforated plate 41 and 0 V to the perforated plate 42 produces a focused electron beam.
  • the focal point of the focused beam can be varied by adjusting the voltages on plates 41 and 42.
  • the application of the electron source illustrated (not to scale) in Figure 5 represents a configuration suitable for producing an electron beam of which the intensity can be modulated.
  • This configuration comprises a microscopically flat carbon nanotube film 12, a perforated insulating spacer 13, a grid 14 (for example 50 mesh, i.e. 300 ⁇ m) , a second insulating spacer 53 similar to 13 and a second grid 54 (for example 200 mesh, i.e. 75 ⁇ m) .
  • Applying a voltage of for example -500 V to the microscopically flat carbon nanotube film 12 and 0 V to the two grids 14 and 54 produces an electron beam.
  • An example of electron source in a configuration suitable for producing an electron beam of which the intensity can be modulated and where the electron beam intensity can be monitored is represented (not to scale) in Figure 6.
  • This configuration is similar to the configuration illustrated in Figure 4, with an additional grid 61, for example 50 mesh (i.e. 300 ⁇ m) , and perforated insulating spacer 62, for example 0.1 mm thick.
  • a fraction of the electron beam is intercepted by the grid 61 and the resulting current is proportional to the electron beam current, which consequently can be used in a feedback loop as described in Figure 3 to regulate the voltages of the grids 63 and 14 and which can consequently be used to stabilize the electron beam as described in Figure 3.
  • Figure 7 shows a schematic example (not to scale) of multiple duplicates of the electron source according to the invention in the configuration described in Figure 6, mounted on a single sheet of aligned microscopically flat carbon nanotube film 79, which are arranged in a two dimensional array consisting of rows and columns.
  • the first grids of the sources in a row 70, 71, 72 of the array are mutually electrically connected and are called the enable electrodes.
  • the second grids of the sources in a column 73, 74, 75 are mutually connected and are called the gate electrodes.
  • the third grids of the sources in a column 76, 77, 78 of the array are mutually connected and are called the monitor electrodes.
  • a three by three array is represented in Figure 7.
  • the pattern can be repeated indefinitely to cover the entire surface of the single sheet of the microscopically flat carbon nanotube film.
  • a voltage of for example -300 V to the microscopically flat carbon nanotube film 79 and an enabling voltage of 0 V to enable electrode 70 and applying for example -200 V to enable electrodes 71 and 72, and applying a voltage of 0 V to the gate electrode 73 and applying a voltage of for example -200 V to gate electrode 74, and applying a voltage of 0 V to gate electrode 75 causes elements 710 and 712 to emit electrons while all other elements of the array do not emit electrons.
  • the electron currents of elements 710, 711 and 712 can be monitored by measuring the current flowing through monitor electrodes 76, 77 and 78 respectively, and these currents can then be used in a feedback loop to adjust the electron beams emitted from elements 710, 711 and 712 respectively.
  • enabling voltages to successive enabling electrodes, while simultaneously supplying appropriate gate voltages to all gate electrodes, rows of emitters will simultaneously be activated, and each of those activated elements can be regulated using their corresponding monitor electrodes. If, furthermore, a phosphor screen is placed in front of this array, a two dimensional image can be produced.
  • Figures 8.1 to 8.5 show a schematic example (not to scale) of a two dimensional array of an electron source according to the invention consisting of a series of parallel mutually electrically insulated strips of microscopically flat carbon nanotube film (Figure 8.3); a perforated thin insulating sheet where the positions of the perforations correspond with the strips of microscopically flat carbon nanotube film as indicated ( Figure 8.4); and a series of parallel conducting strips supplied with grids located at positions corresponding to the perforations in the thin insulating sheet ( Figure 8.5).
  • the assembled structure constructed by superimposing the elements represented in Figures 8.3, 8.4 and 8.5, such that the strips of microscopically flat carbon nanotube film 83 lie directly beneath the perforations in the insulating sheet 84, which in turn lie directly beneath the grids 85.
  • a column of the array for example 81
  • other columns of the array for example 82 are disabled by supplying a less negative voltage than that supplied to 81.
  • the different elements of array are activated by supplying separate voltages to the parallel conducting strips.
  • each element of the column of elements along the strip of microscopically flat carbon nanotube film emits electron beams with intensities which depend on the voltage supplied to each of the parallel conducting strips. Furthermore, the intensity of an individual electron beam in the array may be monitored by determining the current through the corresponding parallel conducting strip, and this current may be used to stabilize and regulate the electron beam of each of the enabled elements by regulating the voltages supplied to the parallel conducting strips using a feedback mechanism of which an example is given in Figure 3.
  • FIG. 9 schematically shows an example of electron source according to the invention using modified electron optics.
  • a perforated conducting layer 92 is in electrical contact with the microscopically flat carbon nanotube film 12. This layer is covered with a perforated insulating layer 13 and a perforated conducting layer 14.
  • a positive potential with respect to conducting layer 92 is applied to conducting lyaer 14 in order to produce an electric field at the carbon nanotube film, so that electrons are ejected from the film.
  • the electron optical properties of this configuration insure that the electric field is uniform over the emitting part of the surface of the carbon nanotube film.
  • the conducting layer 92 insures that the electric field at and near the contact of the nanotube film and the conducting layer 92 is strongly reduced thereby inhibiting potentially damaging arcing discharges.
  • the sizes of the perforations and the thickness of the elements 92, 13 and 14 may be chosen to produce a focused electron beam.
  • the thickness of the insulators and conducting layers should range from 1 ⁇ m to 1 mm and the perforations sizes should range from 1 ⁇ m to 1 mm.
  • the perforation size can range from 0.1 to 10 times the thickness of element 13.
  • Figure 10 schematically shows an example of electron source according to the invention using modified electron optics as in Figure 9, with in addition a perforated insulating layer 106 and a perforated conducting layer 107.
  • the purpose of layers 106 and 107 is to further control the electron beam in a manner similar to the example of Figure 4. Additional layers of perforated insulators and perforated conductors may be used.

Abstract

La présente invention concerne une source d'électrons qui comprend un film de nanotubes de carbone microscopiquement plat, uniforme, parallèlement auquel et très près duquel se trouvent une ou plusieurs plaques conductrices minces perforées, isolées électriquement dudit film. Un champ électrique auquel est soumis le film, et produit par une tension appliquée à ce film et aux plaques conductrices, fait que le film émet des électrons par effet de champ. On obtient ainsi un faisceau d'électrons qui passe par les perforations des plaques conductrices et dont l'intensité est déterminée par le champ électrique que subit le film de nanotubes de carbone, champ qui peut être réglé au moyen des tensions appliquées aux plaques conductrices minces perforées.
PCT/IB1996/000573 1995-06-12 1996-06-11 Source d'electrons et ses applications WO1996042101A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU57770/96A AU5777096A (en) 1995-06-12 1996-06-11 Electron source and applications of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15195P 1995-06-12 1995-06-12
US60/000,151 1995-06-12

Publications (1)

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WO1996042101A1 true WO1996042101A1 (fr) 1996-12-27

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0905737A1 (fr) * 1997-09-30 1999-03-31 Ise Electronics Corporation Source émettrice d'électrons et procédé de fabrication
WO2000049636A1 (fr) * 1999-02-19 2000-08-24 Motorola Inc. Procede et circuit de commande du courant d'emission de champ
DE10039479A1 (de) * 1999-08-10 2001-03-15 Delta Optoelectronics Inc Lichtemittierende Zelle und Verfahren zum Emitieren von Licht
WO2001026130A1 (fr) * 1999-09-30 2001-04-12 Motorola Inc. Procede de fabrication d'un film emetteur d'electrons
GB2359660A (en) * 2000-02-25 2001-08-29 Samsung Sdi Co Ltd Triode field emission display using carbon nanotubes
WO2001082324A1 (fr) * 2000-04-25 2001-11-01 Mcnc Regulateur de courant a cathode froide en boucle fermee
WO2001084130A2 (fr) * 2000-05-01 2001-11-08 El-Mul Technologies Ltd. Dispositif d'emission electronique a nanotube et systemes utilisant ce dispositif
WO2005048290A2 (fr) 2003-11-12 2005-05-26 Thermo Electron Corporation Sources d'ionisation electronique a nanotube de carbone
US7161148B1 (en) 1999-05-31 2007-01-09 Crystals And Technologies, Ltd. Tip structures, devices on their basis, and methods for their preparation
GB2460729A (en) * 2008-07-09 2009-12-16 Draegerwerk Ag & Co Kgaa Miniaturised non-radioactive electron emitter

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EP0596242A1 (fr) * 1992-11-02 1994-05-11 Motorola, Inc. Dispositif d'affichage à cathodes froides à intensité modulé
JPH06331309A (ja) * 1993-05-25 1994-12-02 Nec Corp カーボンナノチューブを用いた陰極
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EP0596242A1 (fr) * 1992-11-02 1994-05-11 Motorola, Inc. Dispositif d'affichage à cathodes froides à intensité modulé
JPH06331309A (ja) * 1993-05-25 1994-12-02 Nec Corp カーボンナノチューブを用いた陰極
DE4405768A1 (de) * 1994-02-23 1995-08-24 Till Keesmann Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung

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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100363005B1 (ko) * 1997-09-30 2003-02-14 노리타케 이트론 코포레이션 전자방출원및그제조방법
US6239547B1 (en) 1997-09-30 2001-05-29 Ise Electronics Corporation Electron-emitting source and method of manufacturing the same
EP0905737A1 (fr) * 1997-09-30 1999-03-31 Ise Electronics Corporation Source émettrice d'électrons et procédé de fabrication
EP1361592A1 (fr) * 1997-09-30 2003-11-12 Ise Electronics Corporation Procédé de fabrication d'une source émettrice d'électrons
WO2000049636A1 (fr) * 1999-02-19 2000-08-24 Motorola Inc. Procede et circuit de commande du courant d'emission de champ
US7161148B1 (en) 1999-05-31 2007-01-09 Crystals And Technologies, Ltd. Tip structures, devices on their basis, and methods for their preparation
DE10039479A1 (de) * 1999-08-10 2001-03-15 Delta Optoelectronics Inc Lichtemittierende Zelle und Verfahren zum Emitieren von Licht
WO2001026130A1 (fr) * 1999-09-30 2001-04-12 Motorola Inc. Procede de fabrication d'un film emetteur d'electrons
US6290564B1 (en) 1999-09-30 2001-09-18 Motorola, Inc. Method for fabricating an electron-emissive film
GB2359660B (en) * 2000-02-25 2004-07-07 Samsung Sdi Co Ltd Triode field emission display using carbon nanobtubes
GB2359660A (en) * 2000-02-25 2001-08-29 Samsung Sdi Co Ltd Triode field emission display using carbon nanotubes
US6836066B1 (en) 2000-02-25 2004-12-28 Samsung Sdi Co., Ltd. Triode field emission display using carbon nanobtubes
US6392355B1 (en) 2000-04-25 2002-05-21 Mcnc Closed-loop cold cathode current regulator
WO2001082324A1 (fr) * 2000-04-25 2001-11-01 Mcnc Regulateur de courant a cathode froide en boucle fermee
US6492781B2 (en) 2000-04-25 2002-12-10 Mcnc Closed-loop cold cathode current regulator
US6512235B1 (en) 2000-05-01 2003-01-28 El-Mul Technologies Ltd. Nanotube-based electron emission device and systems using the same
WO2001084130A2 (fr) * 2000-05-01 2001-11-08 El-Mul Technologies Ltd. Dispositif d'emission electronique a nanotube et systemes utilisant ce dispositif
WO2001084130A3 (fr) * 2000-05-01 2002-06-13 El Mul Technologies Ltd Dispositif d'emission electronique a nanotube et systemes utilisant ce dispositif
WO2005048290A2 (fr) 2003-11-12 2005-05-26 Thermo Electron Corporation Sources d'ionisation electronique a nanotube de carbone
WO2005048290A3 (fr) * 2003-11-12 2005-09-15 Thermo Electron Corp Sources d'ionisation electronique a nanotube de carbone
JP2007511064A (ja) * 2003-11-12 2007-04-26 サーモ フィッシャー サイエンティフィック インク カーボンナノチューブ電子イオン化装置
JP4644679B2 (ja) * 2003-11-12 2011-03-02 サーモ フィッシャー サイエンティフィック インク カーボンナノチューブ電子イオン化装置
GB2460729A (en) * 2008-07-09 2009-12-16 Draegerwerk Ag & Co Kgaa Miniaturised non-radioactive electron emitter

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