WO1996041687A1 - On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing - Google Patents
On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing Download PDFInfo
- Publication number
- WO1996041687A1 WO1996041687A1 PCT/US1996/009554 US9609554W WO9641687A1 WO 1996041687 A1 WO1996041687 A1 WO 1996041687A1 US 9609554 W US9609554 W US 9609554W WO 9641687 A1 WO9641687 A1 WO 9641687A1
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- WIPO (PCT)
- Prior art keywords
- vapor
- gas
- purity
- purifier
- flow
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000012545 processing Methods 0.000 title description 10
- 238000000746 purification Methods 0.000 claims abstract description 27
- 238000005389 semiconductor device fabrication Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 18
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 238000004821 distillation Methods 0.000 claims description 12
- 239000003153 chemical reaction reagent Substances 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- 239000012498 ultrapure water Substances 0.000 claims description 10
- 230000003134 recirculating effect Effects 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000008213 purified water Substances 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 abstract description 18
- 229910052785 arsenic Inorganic materials 0.000 abstract description 15
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 14
- 239000012535 impurity Substances 0.000 abstract description 13
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 89
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 33
- 239000000126 substance Substances 0.000 description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 17
- 238000011109 contamination Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 229910021529 ammonia Inorganic materials 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 150000001450 anions Chemical class 0.000 description 6
- 238000010923 batch production Methods 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052745 lead Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052987 metal hydride Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000001223 reverse osmosis Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- 238000001577 simple distillation Methods 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- -1 "CP4A Chemical compound 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000005349 anion exchange Methods 0.000 description 1
- 239000003957 anion exchange resin Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008366 buffered solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003729 cation exchange resin Substances 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- OSVXSBDYLRYLIG-UHFFFAOYSA-N chlorine dioxide Inorganic materials O=Cl=O OSVXSBDYLRYLIG-UHFFFAOYSA-N 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 238000001471 micro-filtration Methods 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical group OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000009287 sand filtration Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J39/00—Cation exchange; Use of material as cation exchangers; Treatment of material for improving the cation exchange properties
- B01J39/04—Processes using organic exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/013—Separation; Purification; Concentration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B7/00—Halogens; Halogen acids
- C01B7/19—Fluorine; Hydrogen fluoride
- C01B7/191—Hydrogen fluoride
- C01B7/195—Separation; Purification
- C01B7/197—Separation; Purification by adsorption
- C01B7/198—Separation; Purification by adsorption by solid ion-exchangers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/02—Preparation, purification or separation of ammonia
- C01C1/024—Purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/16—Halides of ammonium
- C01C1/162—Ammonium fluoride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Definitions
- the present invention relates to semiconductor manufacture, and particularly to systems and methods for supplying ultra-high-purity HF and hydrofluoric acid for semiconductor manufacture.
- Contamination is generally an overwhelmingly important concern in integrated circuit manufacturing.
- cleanup steps of one kind or another such cleanup steps may need to remove organic con- taminants, metallic contaminants, photoresist (or inorganic residues thereof), byproducts of etching, native oxides, etc.
- Plasma etching has many attractive capabilities, but it is not adequate for cleanup. There is simply no available chemistry to remove some of the most undesirable impurities, such as gold. Thus wet cleanup processes are essential to modern semiconductor processing, and are likely to remain so for the foreseeable future.
- Plasma etching is performed with photoresist in place, and is not directly followed by high-temperature steps. Instead the resist is stripped, and a cleanup is then necessary.
- the materials which the cleanup must remove may include: photoresist residues (organic polymers); sodium; Alkaline earths (e.g. calcium or magnesium); and heavy metals (e.g. gold). Many of these do not form volatile halides, so plasma etching cannot carry them away. Cleanups using wet chemistries are required.
- Integrated circuit structures use only a few dopant species (boron, arsenic, phosphorus, and sometimes antimony) to form the required p-type and n-type doped regions.
- dopant species boron, arsenic, phosphorus, and sometimes antimony
- many other species are electrically active dopants, and are highly undesirable contaminants. Many of these contaminants can have deleterious effects, such as increased junction leakage, at concentrations well below 10 13 cm "3 .
- some of the less desirable contaminants segregate into silicon, i.e. where silicon is in contact with an aqueous solution the equilibrium concentration of the contaminants will be higher in the silicon than in the solution.
- all liquid solutions which will be used on a semiconductor wafer should preferably have extremely low levels of all metal ions.
- concentration of all metals combined should be less than 300 ppt (parts per trillion), and less than 10 ppt for any one metal, and less would be better.
- contamination by both anions and cations must also be controlled. (Some anions may have adverse effects, e.g. complexed metal ions may reduce to mobile metal atoms or ions in the silicon lattice.)
- Front end facilities normally include on-site purification systems for preparation of high-purity water (referred to as "DI" water, i.e. deionized water).
- DI high-purity water
- process chemicals in the purities needed.
- the present inventors have developed a method for preparing ultra-high-purity ammonia, in an on-site system located at the semiconductor wafer production site, by: drawing ammonia vapor from a liquid ammonia reservoir, passing the ammonia vapor through a microfiltration filter, and scrubbing the filtered vapor with high-pH purified water (preferably deionized water which has been allowed to equilibrate with the ammonia stream).
- high-pH purified water preferably deionized water which has been allowed to equilibrate with the ammonia stream.
- the drawing of the ammonia vapor from the supply reservoir serves by itself as a single-stage distillation, eliminating nonvolatile and high-boiling impurities, such as alkali and alkaline earth metal oxides, carbonates and hydrides, transition metal halides and hydrides, and high-boiling hydrocarbons and halocarbons.
- the reactive volatile impurities that could be found in commercial grade ammonia, such as certain transition metal halides.
- Group HI metal hydrides and halides, certain Group IV hydrides and halides. and halogens, previously thought to require distillation for removal, were discovered to be capable of removal by scrubbing to a degree which is adequate for high-precision operations. This is a very surprising discovery, since scrubber technology is traditionally used for the removal of macro-scale, rather than micro-scale, impurities.
- the present application discloses systems and methods for preparation of ultrapure chemicals on-site at a semiconductor manufacturing facility, so that they can be piped directly to the points of use.
- the disclosed systems are very compact units which can be located in the same building as a front end (or in an adjacent building), so that handling is avoided.
- Hydrofluoric acid is an important process chemical in semiconductor manufac- turing. It is overwhelmingly important for deglaze (i.e. removal of thin native oxides) and for oxide removal generally. It is also a component of standard wet etches for isotropic etching of silicon (e.g. "CP4A,” which is 3 parts HF, 5 parts HNO 3 , and 3 parts acetic acid).
- Anhydrous HF is typically manufactured by the addition of sulfuric acid to fluorspar, CaF 2 .
- fluorspars contain arsenic, which leads to contamination of the resulting HF.
- arsenic contamination is a dominant problem with HF purification.
- One source (from China) contains minimal As and is the optimal raw material for Ultra high purity HF.
- HF manufactured from this material is available from Allied Chemical in the US.
- Other impurities, in conventional systems, are contributed by the HF generation and handling system. These impurities result from degradation of these systems; these systems were designed for applications much less demanding than the semiconductor industry. These contaminants must be removed in order to achieve good semiconductor performance.
- the HF process flow includes a batch process arsenic removal and evaporation stage, a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
- Arsenic will be converted to the +5 state and held in the evaporator during distillation by the addition of an oxidant (KMnO 4 or (NH 4 ) 2 S 2 O 8 ) and a cation source such as KHF-, to form the salt K 2 AsF 7 .
- an oxidant KMnO 4 or (NH 4 ) 2 S 2 O 8
- KHF- cation source
- Groups 3 - 12 (III A - II A) Cr, W, Mo, Mn, Fe, Cu, Zn
- Group 13 (III) Ga Group 14 (IV) Sn, Pb, and
- This fractionating column acts as a series of many simple distillations; this is achieved by packing the column with a high surface area material with a counter current liquid flow thus ensuring complete equilibrium between the descending liquid and rising vapor. Only a partial condenser will be installed in this column to provide reflux and the purified gaseous HF will then be conducted to the HF Ionic Purifier (HF IP).
- HF IP HF Ionic Purifier
- the HF IP will be utilized as an additional purity guarantee prior to introduction of the HF gas into the supplier systems. These elements may be present in the treatment solution or introduced in the IP to absorb sulfate carried over in the HF stream. IP testing has demonstrated significant reductions in the HF gas stream contamination for the following elements:
- Figure 1 shows an on-site HF purifier according to a sample embodiment of the disclosed innovations.
- Figure 1A shows an on-site HF purifier according to an alternative embodiment of the disclosed innovations, wherein high-purity arsenic-reduced hydrofluoric acid is used as the bulk starting material.
- Figure 2 is a block diagram of a semiconductor fabrication line to which the purification unit of Figure 1 may be directly connected.
- FIG. 1 shows an on-site HF purifier according to a sample embodiment of the disclosed innovations.
- HF purification is accomplished by first oxidizing arsenic into the +5 oxidation state and fractionation to remove the As +5 and metallic impurities. See US Patent 4,929,435, which is hereby incorporated by reference. A variety of oxidizing reagents have been used for this purpose, as shown in the literature.
- Fluorine (F 2 ) has been shown to work (by the published work of others), and is regarded as the presently preferred embodiment. F 2 requires expensive plumbing and safeguards, but has been shown to be workable.
- An alternative secondarily preferred embodiment uses ammonium persulfate ((NH 4 ) 2 S 2 O 8 ), which is conveniently available in ultra-high purity.
- oxidizers which do not introduce metal atoms are preferred.
- other candidates include H- O ⁇ , and O 3 .
- a less preferred candidate is Caro's acid (persulfuric acid, H-,SO 5 , which produces H 2 O 2 in solution).
- Another option is ClO 2 . but this has the severe disadvantage of being explosive.
- Other options include HNO 3 and Cl 2 , but both of these introduce anions which must be separated out. (Reduction of non-metallic anions is not as critical as reduction of metal cations, but it is still desirable to achieve anion levels of 1 ppb or less. Initial introduction of anions thus adds to the load on the ionic purification stage.)
- KMnO 4 is the most conventional oxidant, and is predicted to be useable for ultrapurification if followed by the disclosed ionic purifier and HF stripping process.
- this reagent imposes a substantial burden of cations on the purifier, so a metal-free oxidizer is preferred.
- high-purity 49% HF which is essentially arsenic-free can be used.
- Such low-arsenic material is expected to be available from Allied as of the third quarter of 1995, and can used, in combination with an on-site ionic purification process which does NOT include an arsenic oxidation reagent, to produce ultrapure HF on-site.
- the HF process flow includes a batch process arsenic removal and evaporation stage, a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
- a batch process arsenic removal and evaporation stage includes a fractionating column to remove most other impurities, an Ionic Purifier column to suppress contaminants not removed by the fractionating column, and finally the HF Supplier (HFS).
- Arsenic will be converted to the +5 state and held in the evaporator during distillation by the addition of an oxidant (KMnO 4 or (NH 4 ) 2 S 2 O 8 ) and a cation source such as KHF 2 to form the salt K 2 AsF 7 .
- an oxidant KMnO 4 or (NH 4 ) 2 S 2 O 8
- a cation source such as KHF 2
- This process requires contact times of approximately 1 hr at nominal temperatures. To achieve complete reaction in a continuous process would require high temperatures and pressures (undesirable for safety) or very large vessels and piping.
- the HF would be introduced into a batch process evaporator vessel and would be treated with an oxidant while stirring for a suitable reaction time.
- Group 2 (II) Ca > Sr, Ba, Groups 3 - 12 (III A - II A) Cr, W, Mo, Mn, Fe. Cu. Zn
- Group 15 (VII) Sb This fractionating column acts as a series of many simple distillations; this is achieved by packing the column with a high surface area material with a counter current liquid flow thus ensuring complete equilibrium between the descending liquid and rising vapor. Only a partial condenser will be installed in this column to provide reflux and the purified gaseous HF will then be conducted to the HF Ionic Purifier (HF IP).
- HF IP HF Ionic Purifier
- the HF at this stage is pure by normal standards, except for the possible carry over of the arsenic treatment chemicals or the quench required to remove these chemicals.
- the HF IP will be utilized as an additional purity guarantee prior to introduction of the HF gas into the supplier systems. These elements may be present in the treatment solution or introduced in the IP to absorb sulfate carried over in the HF stream. IP testing has demonstrated significant reductions in the HF gas stream contamination for the following elements:
- Figure 1A shows an on-site HF purifier according to an alternative embodiment of the disclosed innovations, wherein high-purity arsenic-reduced hydrofluoric acid is used as the bulk starting material.
- the first unit in the cleaning line is a resist stripping station 41 where aqueous hydrogen peroxide 42 and sulfuric acid 43 are combined and applied to the semiconductor surface to strip off the resist. This is succeeded by a rinse station 44 where deionized water is applied to rinse off the stripping solution. Immediately downstream of the rinse station 44 is a cleaning station 45 where an aqueous solution of ammonia and hydrogen peroxide are applied. This solution is supplied in one of two ways. In the first, aqueous ammonia 31 is combined with aqueous hydrogen peroxide 46, and the resulting mixture 47 is directed to the cleaning station 45.
- pure gaseous ammonia 32 is bubbled into an aqueous hydrogen peroxide solution 48 to produce a similar mixture 49. which is likewise directed to the cleaning station 45.
- the semiconductor passes to a second rinse station 50 where deionized water is applied to remove the cleaning solution.
- the next station is a further cleaning station 54 where aqueous solutions of hydrochloric acid 55 and hydrogen peroxide 56 are combined and applied to the semiconductor surface for further cleaning.
- This is followed by a final rinse station 57 where deionized water is applied to remove the HC1 and H 2 O 2 .
- dilute buffered HF is applied to the wafer (for removal of native or other oxide film).
- the dilute buffered hydrofluoric acid is supplied directly, through sealed piping, from the generator 70.
- the reservoir 72 holds anhydrous HF, from which a stream of gaseous HF is fed through the ionic purifier 71 into generator 70.
- gaseous ammonia is also bubbled into generator 70 to provide a buffered solution, and ultrapure deionized water is added to achieve the desired dilution. This is followed by a rinse in ultrapure deionized water (at station 60), and drying at station 58.
- the wafer or wafer batch 61 will be held on a wafer support 52, and conveyed from one workstation to the next by a robot 63 or some other conventional means of achieving sequential treatment.
- the means of conveyance may be totally automated, partially automated or not automated at all.
- FIG. 2 is just one example of a cleaning line for semiconductor fabrication.
- cleaning lines for high-precision manufacture can vary widely from that shown in FIG. 2, either eliminating one or more of the units shown or adding or substituting units not shown.
- the concept of the on-site preparation of high-purity aqueous ammonia, however, in accordance with this invention is applicable to all such systems.
- ammonia and hydrogen peroxide as a semiconductor cleaning medium at workstations such as the cleaning station 45 shown in FIG. 2 is well known throughout the industry. While the proportions vary, a nominal system would consist of deionized water, 29% ammonium hydroxide (weight basis) and 30% hydrogen peroxide (weight basis), combined in a volume ratio of 6: 1 : 1. This cleaning agent is used to remove organic residues, and, in conjunction with ultrasonic agitation at frequencies of approximately 1 MHz, removes particles down to the submicron size range.
- the purification (or purification and generation) system is positioned in close proximity to the point of use of the ultrapure chemical in the production line, leaving only a short distance of travel between the purification unit and the production line.
- the ultrapure chemical from the purification (or purification and generation) unit may pass through an intermediate holding tank before reaching the points of use. Each point of use will then be fed by an individual outlet line from the holding tank.
- the ultrapure chemical can therefore be directly applied to the semiconductor substrate without packaging or transport and without storage other than a small in-line reservoir, and thus without contact with the potential sources of contamination normally encountered when chemicals are manufactured and prepared for use at locations external to the manufacturing facility.
- the distance between the point at which the ultrapure chemical leaves the purification system and its point of use on the production line will generally be a few meters or less. This distance will be greater when the purification system is a central plant-wide system for piping to two or more use stations, in which case the distance may be two thousand feet or greater. Transfer can be achieved through an ultra-clean transfer line of a material which does not introduce contamination. In most applications, stainless steel or polymers such as high density polyethylene or fluorinated polymers can be used successfully.
- the water used in the unit can be purified in accordance with semiconductor manufacturing standards. These standards are commonly used in the semiconductor industry and well known among those skilled in the art and experienced in the industry practices and standards. Methods of purifying water in accordance with these standards include ion exchange and reverse osmosis.
- Ion exchange methods typically include most or all of the following units: chemical treatment such as chlorination to kill organisms; sand filtration for particle removal; activated charcoal filtration to remove chlorine and traces of organic matter: diatomaceous earth filtration; anion exchange to remove strongly ionized acids; mixed bed polishing, containing both cation and anion exchange resins to remove further ions; sterilization, involving chlorination or ultraviolet light; and filtration through a filter of 0.45 micron or less.
- Reverse osmosis methods will involve, in place of one or more of the units in the ion exchange process, the passage of the water under pressure through a selectively permeable membrane which does not pass many of the dissolved or suspended substances.
- Typical standards for the purity of the water resulting from these processes are a resistivity of at least about 15 megohm-cm at 25°C (typically 18 megohm-cm at 25°C), less than about 25ppb of electrolytes, a paniculate content of less than about 150/cm 3 and a particle size of less than 0.2 micron, a microorganism content of less than about 10/cm 3 , and total organic carbon of less than lOOppb.
- a high degree of control over the product concentration and hence the flow rates is achieved by precise monitoring and metering using known equipment and instrumentation. A convenient means of achieving this is by acoustic velocity sensing. Other methods will be readily apparent to those skilled in the art.
- concentration control loop using conductivity, etc., in place of acoustic velocity
- An on- site subsystem in a semiconductor device fabrication facility, for providing ultra-high-purity reagents comprising HF to a semiconductor manufacturing operation, comprising: an evaporation source connected to receive an HF source and to provide a flow of HF vapor therefrom; said flow of HF vapor being connected to pass through an ionic purifier unit which provides a recirculating volume of high-purity water, containing a high concentration of HF in contact with said flow of HF vapor, wherein said purifier exhausts a small amount of HF gas; and a generator unit, connected to receive said flow of HF vapor from said purifier and to combine said HF vapor with an aqueous liquid to produce an ultra-pure aqueous solution comprising hydrofluoric acid; and a piping connection which routes said a- queous solution to points of use in the semiconductor device fabrication facility.
- An on-site subsystem in a semiconductor device fabrication facility, for providing ultra-high- purity reagents comprising HF to a semiconductor manufacturing operation, comprising: an evaporation source connected to receive HF and to provide a flow of HF vapor therefrom; said flow of HF vapor being connected to pass through an ionic purifier unit which provides a recirculating volume of high-purity water, containing a high concentration of HF in contact with said flow of HF vapor, wherein said purifier exhausts a small amount of HF gas; and a generator unit, connected to receive said flow of HF vapor from said purifier and to combine said HF vapor with an aqueous liquid to produce an ultra-pure aqueous solution comprising hydrofluoric acid; whereby said ultra-pure aqueous solution can be used within the semiconductor device fabrication facility without bulk transfer or exposure of liquid surface to any uncontrolled ambient atmosphere.
- An on-site subsystem in a semiconductor device fabrication facility, for providing ultra-high- purity HF for use in semiconductor manufacturing operations at said facility, comprising: an evaporation source connected to receive a liquid HF source and to provide a flow of HF vapor therefrom; said flow of HF vapor being connected to pass through an ionic purifier unit which provides a recirculating volume of high-purity water, containing a high concentration of HF in contact with said flow of HF vapor, wherein said purifier exhausts a small amount of HF gas; and a dryer unit, connected to receive said flow of HF vapor from said purifier and to dry said HF vapor; and a piping connection which routes said vapor from said dryer to points of use in the semiconductor device fabrication facility.
- a method for supplying a high-purity HF reagent to a workstation in a production line for the manufacture of a high-precision electronic component comprising: (a) drawing HF gas from a vapor space above hydrofluoric acid in an HF-containing reservoir; (b) passing said HF gas through a filtration membrane removing particles greater than 0.005 micron therefrom; (c) passing said HF gas thus filtered through a scrubber whereby said HF gas is contacted with an aqueous solution of HF in deionized water, wherein said scrubber exhausts a small amount of HF gas; and (d) recovering HF gas emerging from said scrubber and directing said HF gas to said workstation.
- the source of gaseous HF for purification can be anhydrous HF. or alternatively can be a heated evaporator which evolves HF from 49% aqueous HF)
- the disclosed innovative techniques are not strictly limited to manufacture of integrated circuits, but can also be applied to manufacturing discrete semiconductor components, such as optoelectronic and power devices.
- the disclosed innovative techniques can also be adapted to manufacture of other technologies where integrated circuit manufacturing methods have been adopted, such as in thin-film magnetic heads and active-matrix liquid-crystal displays; but the primary application is in integrated circuit manufacturing, and applications of the disclosed techniques to other areas are secondary.
- the primary embodiment is an on-site purification system.
- the disclosed purification system can also be adapted to operate as a part of a manufacturing unit to produce ultra-high-purity chemicals for shipment; however, this alternative embodiment does not provide the advantages of on-site purification as discussed above.
- Such applications encounter the inherent risks of handling ultra-high-purity chemicals, as discussed above; but for customers who require packaged chemicals (with the attendant handling), the disclosed innovations at least give a way to achieve an initial purity which is higher than that available by other techniques. Again, in such applications a dryer stage may also be used after the ionic purifier.
- the primary embodiment is directed to providing ultrapure aqueous chemicals, which are most critical for semiconductor manufacturing.
- the disclosed system and method embodiments can also be used for supply of purified gas streams. (In many cases, use of a dryer downstream from the purifier will be useful for this.)
- piping for ultrapure chemical routing in semiconductor front ends may include in-line or pressure reservoirs.
- references to "direct" piping in the claims do not preclude use of such reservoirs, but do preclude exposure to uncontrolled atmospheres.
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- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8536848A JPH11507001A (en) | 1995-06-05 | 1996-06-05 | On-site production of ultrapure hydrofluoric acid for semiconductor processing |
AU61618/96A AU6161896A (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid f or semiconductor processing |
EP96919223A EP0833705A4 (en) | 1995-06-05 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
US09/034,004 US6063356A (en) | 1994-01-07 | 1998-03-03 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
USPCT/US95/07649 | 1995-06-05 | ||
PCT/US1995/007649 WO1996039358A1 (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
US49941495A | 1995-07-07 | 1995-07-07 | |
US08/499,414 | 1995-07-07 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1995/007649 Continuation-In-Part WO1996039358A1 (en) | 1994-01-07 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/673,909 Continuation-In-Part US5785820A (en) | 1994-01-07 | 1996-07-01 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996041687A1 true WO1996041687A1 (en) | 1996-12-27 |
Family
ID=26789684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/009554 WO1996041687A1 (en) | 1994-01-07 | 1996-06-05 | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH11507001A (en) |
KR (1) | KR19990022226A (en) |
CN (1) | CN1190913A (en) |
AU (1) | AU6161896A (en) |
MY (1) | MY132240A (en) |
WO (1) | WO1996041687A1 (en) |
Cited By (7)
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EP0970744A2 (en) | 1998-07-07 | 2000-01-12 | Air Products And Chemicals, Inc. | Chemical generator with controlled mixing and concentration feedback and adjustment |
WO2001049601A1 (en) * | 1999-12-30 | 2001-07-12 | Honeywell International Inc. | Purification of hydrogen fluoride |
EP1178526A2 (en) * | 2000-07-31 | 2002-02-06 | Mitsubishi Chemical Corporation | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
US9260306B2 (en) | 2008-11-28 | 2016-02-16 | Kyoto University | Hydrogen fluoride purification method |
US10316469B2 (en) | 2014-12-16 | 2019-06-11 | Ecolab Usa Inc. | On-line control and reaction process for pH adjustment |
CN112010263A (en) * | 2020-08-31 | 2020-12-01 | 北京化工大学 | Production device and production method of electronic-grade hydrofluoric acid |
CN115487522A (en) * | 2022-09-06 | 2022-12-20 | 内蒙古东岳金峰氟化工有限公司 | Hydrogen fluoride purification system and process |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005281048A (en) * | 2004-03-29 | 2005-10-13 | Stella Chemifa Corp | Method and apparatus for refining hydrofluoric acid |
US9216364B2 (en) | 2013-03-15 | 2015-12-22 | Air Products And Chemicals, Inc. | Onsite ultra high purity chemicals or gas purification |
CN114195099B (en) * | 2021-12-16 | 2023-04-28 | 浙江博瑞电子科技有限公司 | Method for preparing electronic grade hydrogen fluoride and electronic grade hydrofluoric acid by in-situ arsenic removal of multichannel microreactor |
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US10316469B2 (en) | 2014-12-16 | 2019-06-11 | Ecolab Usa Inc. | On-line control and reaction process for pH adjustment |
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Also Published As
Publication number | Publication date |
---|---|
MY132240A (en) | 2007-09-28 |
CN1190913A (en) | 1998-08-19 |
AU6161896A (en) | 1997-01-09 |
JPH11507001A (en) | 1999-06-22 |
KR19990022226A (en) | 1999-03-25 |
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