WO1996035228A1 - Slip free vertical rack design - Google Patents
Slip free vertical rack design Download PDFInfo
- Publication number
- WO1996035228A1 WO1996035228A1 PCT/US1996/006294 US9606294W WO9635228A1 WO 1996035228 A1 WO1996035228 A1 WO 1996035228A1 US 9606294 W US9606294 W US 9606294W WO 9635228 A1 WO9635228 A1 WO 9635228A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- rack
- vertical
- radius
- support means
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
Definitions
- IC integrated circuits
- the manufacture of semiconductor devices typically requires heat treating silicon wafers in the presence of reactive gases. During this process, the temperatures and gas .concentrations to which the devices are exposed must be carefully controlled, as the devices often include circuitry elements less than 1 u in size which are sensitive to minute variations in the processing environment.
- the semiconductor manufacturing industry typically processes the wafers in either horizontal or vertical carriers.
- the horizontal carrier typically called a "boat"
- the horizontal carrier typically called a "boat”
- Each set of grooves define a vertical space for carrying a vertically disposed wafer.
- the vertical carrier typically called a “vertical rack”
- the vertical carrier has three or four vertically disposed rods arranged in a semicircle design, with each post having slots set therein at regular intervals to define a space for carrying a horizontally disposed wafer.
- a conventional vertical rack is shown in Figure 1.
- This rack typically has a top plate, a bottom plate, and three or four posts for fixing the top plate to the bottom plate.
- the portions of the post between each slot, termed “teeth” are identically spaced in order to support wafers at regular intervals from and parallel to the bottom plate.
- the entire rack is then placed within a vertical furnace for processing the wafers. Because a wafer processed on a vertical rack experiences less of a temperature gradient over its face, semiconductor manufacturers are increasingly turning to vertical furnaces.
- U.S. Patent No. 5,492,229 discloses a vertical rack design having near center support.
- the first embodiment of this design must either be made by either joining silica components (which are susceptible to high temperatures) or using a water jet to make an interior slit (which is inconvenient) .
- the second embodiment of this design can be made solely by using a more convenient diamond saw, but requires curved vertical supports which cast large shadows upon the wafer.
- a vertical rack for supporting a plurality of semiconductor wafers in a spaced, substantially horizontal, parallel relation
- the vertical rack comprising: a) a vertical support means, and b) a plurality of vertically spaced, horizontal support means extending substantially horizontally from the vertical support means to define a plurality of support levels for supporting the wafers, wherein the horizontal support means are projections, each projection comprising an arm terminating in a wafer platform such that the innermost contact between at least one wafer platform of each support level and its supported wafer is in the region of between 20% and 80% of the wafer radius, measured from the edge of the wafer, and wherein the arm projects at a continuous upward incline and terminates in the wafer platform.
- a vertical rack for supporting a plurality of semiconductor wafers in a spaced, substantially horizontal, parallel relation
- the vertical rack comprising: a) a vertical support means, and b) a plurality of vertically spaced, horizontal support means extending substantially horizontally from the vertical support means to define a plurality of support levels for supporting the wafers, wherein the horizontal support means are projections projecting horizontally to continuously contact the wafer from the wafer edge such that the innermost contact between at least one of the arms at each support level and its supported wafer is in the region between 20% and 80% of the wafer radius, measured from the wafer radius.
- the vertical rack comprises: a) a top plate, b) a bottom plate, and c) a plurality of vertical rods, the upper end of each rod being fixed about the periphery of the top plate and the lower end of each rod being fixed about the periphery of the bottom plate, each of the rods having a plurality of projections spaced equidistantly from the bottom plate to define a plurality of support levels for horizontally supporting the wafers, wherein the innermost contact between at least one of the projections of each support level and its supported wafer is in the region of between 20% and 80% of the wafer radius, measured from the edge of the wafer.
- each projection comprises an arm terminating in a wafer platform and the wafers are supported solely by the wafer platforms.
- the innermost contact between each wafer platform and the supported wafer is in the region of between 20% and 80% of the wafer radius, measured from the edge of the wafer.
- the arm projects at a continuous upward incline and the wafer platform is horizontal. More preferably, the projections are oriented in such a manner that the rods cast a shadow upon no more than 30% of the wafer, most preferably no more than 10% of the wafer.
- each projection consists of an arm projecting horizontally to continuously contact the wafer from the wafer edge such that the innermost contact between the arm and the wafer is in the region between 20% and 80% of the wafer radius, measured from the wafer radius.
- the projections are oriented in such a manner that the rods cast a shadow upon no more than 30% of the wafer, most preferably no more than 10% of the wafer.
- DESCRIPTION OF THE FIGURES Figure 1 is a conventional vertical rack design.
- Figure 2 is a top view and a side view of a vertical rack of the present invention having projections comprising an arm terminating in a wafer platform.
- Figure 3 is a top view and a side view of a vertical rack of the present invention having horizontal arms.
- Figure 4 depicts the shadow produced by the rods of Figures 2 and 3 upon a typical wafer.
- a vertical rack l for processing semiconductor wafers W comprising: a) a top plate 2, b) a bottom plate 3 , and c) a plurality of vertical rods 4, the upper end 5 of each rod being fixed about the periphery of the top plate 2 and the lower end 6 of each rod being fixed about the periphery of the bottom plate 3, each of the rods having a plurality of projections 7 spaced equidistantly from the bottom plate 3 to define a plurality of support levels for horizontally supporting the wafers W, wherein each projection 7 comprises an arm 8 terminating in a wafer platform 9 such that the innermost contact between the wafer platform and the wafer is in the region of between 20% and 80% of the wafer radius, measured from the edge of the wafer.
- the continuous incline of the first embodiment is typically between about 0.5 and about 10 degrees from the horizontal.
- the wafer platform of this embodiment is typically positioned to contact the wafer such that the innermost contact between at least one and preferably each of at least three of the wafer platforms and their supported wafer is in the region of between 20% and 80% of the wafer radius (measured from the edge of the wafer) , and preferably between 33% and 66% of the wafer radius.
- the total surf ce area of the wafer platforms at one support level is typically between about 0.02% and about 1% of the surface area of the wafer.
- a vertical rack 11 for processing semiconductor wafers comprising: a) a top plate 12, b) a bottom plate 13 , and c) a plurality of vertical rods 14, the upper end 15 of each rod being fixed about the periphery of the top plate 12 and the lower end 16 of each rod being fixed about the periphery of the bottom plate 13, each of the rods having a plurality of projections 17 spaced equidistantly from the bottom plate 13 to define a plurality of support levels for horizontally supporting the wafers W, wherein each projection 17 consists of an arm projecting horizontally to continuously contact the wafer W from the wafer edge such that the innermost contact between the arm and the wafer is in the region between 20% and 80% of the wafer radius, measured from the wafer radius.
- FIG. 3 differs from that of Figure 2 in that its arms are horizontal. Since horizontal arms require less vertical space than inclined arms, more wafers can be processed in a rack having this design than in a rack of similar height having inclined arms. Moreover, this rack is easier to construct because it does not require a separate machining step to make the wafer platform of the inclined arm embodiment.
- the innermost contact between at least one and preferably each of at least three of the- arms and their supported wafer is in the region of between about 20% and 80%, and preferably between 33% and 66% of the wafer radius.
- the total contact area between the arms at one support level and their supported wafer is typically between about 1% and about 5% of the surface area of the wafer.
- the surfaces of the projections upon which the wafers rest i.e., either the wafer platforms or horizontal arms
- the surfaces of the projections at a support level should be coplanar to within about 0.05 mm as defined in Section 6.5.6 of ASME National Standard Y14.5M-1994.
- Each should be smooth to within about 1 micron (urn) R a , as defined by Section 3.9.1 of ANSI/ASME National Standard B46.1-1985.
- the distance which the projections typically extend from the rod of the vertical rack is generally dependent upon the size of the wafer to be processed. For example, when the wafer to be processed has a 150 mm diameter, the projections typically extend at least 17 mm, usually between about 22 mm and about 42 mm, and preferably about 29 mm. When the wafer to be processed has a 200 mm diameter, the projections typically extend at least 24 mm, usually between about 32 mm and about 52 mm, and preferably about 38 mm. When the wafer to be processed has a 300 mm diameter, the projections typically extend at least 32 mm, usually between about 42 mm and about 72 mm, and preferably about 56 mm.
- the vertical rack of the present invention can be made from any material commonly used in the high temperature production of vertical racks for semiconductor processing, preferably recrystallized silicon carbide.
- the rack material may also be CVD coated with refractory materials such as silicon carbide, silicon nitride or diamond.
- the rack comprises CRYSTAR, a recrystallized silicon carbide available from the Norton Company of Worcester, MA. It has been observed that the rods of vertical racks typically shield, or "shadow", radiant heat and/or reactive gases (which enter from the periphery of the vertical furnace) from the portions of the wafer inside of and adjacent to the posts. Accordingly, significant variations in temperature and/or gas concentration between the "shadowed" portion of the wafer and the rest of the wafer are produced.
- the projections are radially oriented such that the rods cast a shadow on no more than 30% of the wafer, preferably no more than 10% of the wafer.
- the shadow percentage is calculated by determining the percentage of the wafer face to which reactant gases and/or heat can directly radially proceed from the rack periphery in a path unobstructed by the rods.
- the shaded portion of Figure 4b represents the shadow produced by the rods of Figures 2a and 3a upon the wafers.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Packaging Frangible Articles (AREA)
- Warehouses Or Storage Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8533552A JPH10510680A (en) | 1995-05-05 | 1996-05-03 | Vertical frame structure without slip |
CA002218518A CA2218518C (en) | 1995-05-05 | 1996-05-03 | Slip free vertical rack design |
EP96916442A EP0826233A1 (en) | 1995-05-05 | 1996-05-03 | Slip free vertical rack design |
KR1019970707730A KR100278731B1 (en) | 1995-05-05 | 1996-05-03 | Slip resistant vertical lathe |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43593195A | 1995-05-05 | 1995-05-05 | |
US08/435,931 | 1995-05-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996035228A1 true WO1996035228A1 (en) | 1996-11-07 |
Family
ID=23730415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/006294 WO1996035228A1 (en) | 1995-05-05 | 1996-05-03 | Slip free vertical rack design |
Country Status (8)
Country | Link |
---|---|
US (1) | US5865321A (en) |
EP (1) | EP0826233A1 (en) |
JP (2) | JPH10510680A (en) |
KR (1) | KR100278731B1 (en) |
CN (1) | CN1079577C (en) |
CA (1) | CA2218518C (en) |
MX (1) | MX9708506A (en) |
WO (1) | WO1996035228A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999044222A1 (en) * | 1998-02-27 | 1999-09-02 | Saint-Gobain Industrial Ceramics, Inc. | Slip free vertical rack design having rounded horizontal arms |
WO2000021119A1 (en) * | 1998-10-02 | 2000-04-13 | Union Oil Company Of California | An apparatus for holding a semiconductor wafer |
GB2330944B (en) * | 1997-10-20 | 2003-01-22 | Fluoroware Inc | Wafer carrier with minimal contact |
EP1638135A2 (en) * | 2004-09-17 | 2006-03-22 | Asm International N.V. | Susceptor with surface roughness for high temperature substrate processing |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69738020T2 (en) * | 1996-06-28 | 2008-07-31 | Sumco Corp. | METHOD AND ARRANGEMENT FOR THE THERMAL TREATMENT OF A CRYSTALLINE SURFACE, A CRYSTALLINE PLATE AND METHOD FOR THE PRODUCTION OF A SINGLE CRYSTALLINE SURFACE |
US6001499A (en) * | 1997-10-24 | 1999-12-14 | General Motors Corporation | Fuel cell CO sensor |
US6099645A (en) * | 1999-07-09 | 2000-08-08 | Union Oil Company Of California | Vertical semiconductor wafer carrier with slats |
US20020130061A1 (en) * | 2000-11-02 | 2002-09-19 | Hengst Richard R. | Apparatus and method of making a slip free wafer boat |
US6835039B2 (en) * | 2002-03-15 | 2004-12-28 | Asm International N.V. | Method and apparatus for batch processing of wafers in a furnace |
US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
US7022192B2 (en) * | 2002-09-04 | 2006-04-04 | Tokyo Electron Limited | Semiconductor wafer susceptor |
US6799940B2 (en) | 2002-12-05 | 2004-10-05 | Tokyo Electron Limited | Removable semiconductor wafer susceptor |
US20040173597A1 (en) * | 2003-03-03 | 2004-09-09 | Manoj Agrawal | Apparatus for contacting gases at high temperature |
US7033126B2 (en) * | 2003-04-02 | 2006-04-25 | Asm International N.V. | Method and apparatus for loading a batch of wafers into a wafer boat |
EP1670534B1 (en) * | 2003-07-02 | 2010-01-27 | Cook Incorporated | Coaxial Catheters |
US7181132B2 (en) | 2003-08-20 | 2007-02-20 | Asm International N.V. | Method and system for loading substrate supports into a substrate holder |
US20060027171A1 (en) * | 2004-08-06 | 2006-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer boat for reducing wafer warpage |
US20060065634A1 (en) * | 2004-09-17 | 2006-03-30 | Van Den Berg Jannes R | Low temperature susceptor cleaning |
JP2006128316A (en) * | 2004-10-27 | 2006-05-18 | Shin Etsu Handotai Co Ltd | Vertical boat for heat treatment and heat treating method |
EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
JP2009076621A (en) * | 2007-09-20 | 2009-04-09 | Covalent Materials Corp | Vertical boat for heat treatment |
US8602239B2 (en) * | 2010-08-16 | 2013-12-10 | Robert L. Thomas, JR. | Decorative paper plate storage units |
CN103060774A (en) * | 2011-10-24 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and substrate processing equipment with same |
US9153466B2 (en) * | 2012-04-26 | 2015-10-06 | Asm Ip Holding B.V. | Wafer boat |
PE20180649A1 (en) | 2015-07-31 | 2018-04-17 | Viasat Inc | FLEXIBLE CAPACITY SATELLITE CONSTELLATION |
JP6770461B2 (en) * | 2017-02-21 | 2020-10-14 | クアーズテック株式会社 | Vertical wafer boat |
CN114136422A (en) * | 2020-09-03 | 2022-03-04 | 长鑫存储技术有限公司 | Weighing device |
Citations (1)
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GB2272964A (en) * | 1992-11-27 | 1994-06-01 | Toshiba Ceramics Co | Vertical wafer boat |
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JP3204699B2 (en) * | 1990-11-30 | 2001-09-04 | 株式会社東芝 | Heat treatment equipment |
US5188240A (en) * | 1991-07-05 | 1993-02-23 | Robert K. Hanson | Storage unit for recording-media boxes |
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JP3280437B2 (en) * | 1992-11-27 | 2002-05-13 | 東芝セラミックス株式会社 | Vertical boat |
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JP3245246B2 (en) * | 1993-01-27 | 2002-01-07 | 東京エレクトロン株式会社 | Heat treatment equipment |
JPH06349758A (en) * | 1993-06-03 | 1994-12-22 | Kokusai Electric Co Ltd | Boat for vertical semiconductor manufacturing apparatus |
JP2888409B2 (en) * | 1993-12-14 | 1999-05-10 | 信越半導体株式会社 | Wafer cleaning tank |
US5560499A (en) * | 1994-01-04 | 1996-10-01 | Dardashti; Shahriar | Storage and display assembly for compact discs and the like |
US5515979A (en) * | 1994-07-05 | 1996-05-14 | Salvail; Napoleon P. | Simplified jewel case management and opening for compact disk storage systems |
US5618351A (en) * | 1995-03-03 | 1997-04-08 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
US5679168A (en) * | 1995-03-03 | 1997-10-21 | Silicon Valley Group, Inc. | Thermal processing apparatus and process |
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-
1996
- 1996-05-03 CA CA002218518A patent/CA2218518C/en not_active Expired - Fee Related
- 1996-05-03 WO PCT/US1996/006294 patent/WO1996035228A1/en not_active Application Discontinuation
- 1996-05-03 CN CN96193695A patent/CN1079577C/en not_active Expired - Fee Related
- 1996-05-03 KR KR1019970707730A patent/KR100278731B1/en not_active IP Right Cessation
- 1996-05-03 EP EP96916442A patent/EP0826233A1/en not_active Ceased
- 1996-05-03 JP JP8533552A patent/JPH10510680A/en active Pending
-
1997
- 1997-07-25 US US08/903,267 patent/US5865321A/en not_active Expired - Lifetime
- 1997-11-04 MX MX9708506A patent/MX9708506A/en not_active IP Right Cessation
-
2003
- 2003-04-23 JP JP2003119003A patent/JP2004006841A/en active Pending
Patent Citations (2)
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GB2272964A (en) * | 1992-11-27 | 1994-06-01 | Toshiba Ceramics Co | Vertical wafer boat |
US5492229A (en) * | 1992-11-27 | 1996-02-20 | Toshiba Ceramics Co., Ltd. | Vertical boat and a method for making the same |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2330944B (en) * | 1997-10-20 | 2003-01-22 | Fluoroware Inc | Wafer carrier with minimal contact |
WO1999044222A1 (en) * | 1998-02-27 | 1999-09-02 | Saint-Gobain Industrial Ceramics, Inc. | Slip free vertical rack design having rounded horizontal arms |
JP2002505518A (en) * | 1998-02-27 | 2002-02-19 | サンーゴバン セラミックス アンド プラスティクス,インコーポレイティド | Slip-free vertical rack with curved horizontal arms |
KR100404032B1 (en) * | 1998-02-27 | 2003-11-01 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Slip Free Vertical Rack Design Having Rounded Horizontal Arms |
WO2000021119A1 (en) * | 1998-10-02 | 2000-04-13 | Union Oil Company Of California | An apparatus for holding a semiconductor wafer |
US6171400B1 (en) | 1998-10-02 | 2001-01-09 | Union Oil Company Of California | Vertical semiconductor wafer carrier |
US6357604B1 (en) | 1998-10-02 | 2002-03-19 | Larry S. Wingo | Long tooth rails for semiconductor wafer carriers |
US6532642B1 (en) | 1998-10-02 | 2003-03-18 | Union Oil Company Of California | Method of making a silicon carbide rail for use in a semiconductor wafer carrier |
EP1638135A2 (en) * | 2004-09-17 | 2006-03-22 | Asm International N.V. | Susceptor with surface roughness for high temperature substrate processing |
EP1638135A3 (en) * | 2004-09-17 | 2008-03-19 | Asm International N.V. | Susceptor with surface roughness for high temperature substrate processing |
Also Published As
Publication number | Publication date |
---|---|
US5865321A (en) | 1999-02-02 |
JPH10510680A (en) | 1998-10-13 |
EP0826233A1 (en) | 1998-03-04 |
JP2004006841A (en) | 2004-01-08 |
KR19990008205A (en) | 1999-01-25 |
CA2218518C (en) | 2002-10-01 |
CN1183854A (en) | 1998-06-03 |
CA2218518A1 (en) | 1996-11-07 |
KR100278731B1 (en) | 2001-03-02 |
MX9708506A (en) | 1998-06-30 |
CN1079577C (en) | 2002-02-20 |
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