WO1996021757A1 - Rotatable susceptor with integrated ferromagnetic element - Google Patents
Rotatable susceptor with integrated ferromagnetic element Download PDFInfo
- Publication number
- WO1996021757A1 WO1996021757A1 PCT/US1995/016945 US9516945W WO9621757A1 WO 1996021757 A1 WO1996021757 A1 WO 1996021757A1 US 9516945 W US9516945 W US 9516945W WO 9621757 A1 WO9621757 A1 WO 9621757A1
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- WO
- WIPO (PCT)
- Prior art keywords
- susceptor
- platform
- reference surface
- actuating means
- magnetic
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Definitions
- the invention relates to a device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface and comprising means for obtaining the stability of the susceptor held in sustentation and means for obtaining and measuring its rotary movement.
- the invention further relates to a reactor chamber for vapor-phase epitaxy or chemical-vapor deposition provided with such a device.
- the invention can be used in the manufacture of flat rotatable sample carriers for reactor chambers for vapor-phase epitaxy or chemical-vapor deposition, more particularly for the epitaxial growth from the vapor phase of layers of compounds of the III-V or II- VI group for forming semiconductor devices.
- Vapor-phase epitaxy imposes stringent requirements on the materials used within the reactor chamber.
- High temperatures of the order of 900°C are encountered routinely.
- High purity environment that is as particle-free as possible is required for the growth of high-quality and low-defect-density epitaxial layers.
- Highly-reactive and acutely-toxic gas ambients within the reactor chamber dictate the use of inert materials and leak-proof seals.
- the nermal variations across a susceptor, the difference in rotation rates of different susceptors, the rotation-rate variations from growth to growth, and the gas-flow disturbances and inhomogeneities must be kept to an absolute minimum to obtain highly-uniform epitaxial layers suitable for mass-production.
- a susceptor 14 rotates parallel to a reference surface 30 about a rotary shaft 20 perpendicular to reference surface 30
- Susceptor 14 is held in sustentation and caused to rotate in the indicated direction by the action of gas flow through several gas inlets 40 ⁇ , 40b, and 40c into several helical grooves 51 ⁇ , 5lb, and 51c on reference surface 30
- the rotary movement is obtained by a force ot viscosity of the gas
- FIG lb illustrates the prior-art planetary form of susceptor rotation by gas flow
- Main susceptor 14 rotates in the indicated direction
- Main susceptor 14 also includes a number of secondary susceptors 114, 214, and 314 on a reference surface 130 facing away from reference surface 30
- Secondary susceptor 114 is used as an example applicable to secondary susceptors 214 and 314
- Secondary susceptor 114 is held in sustentation and caused to rotate in the indicated direction by the action of gas flow through an additional gas inlet 42 in reference surface 30, a system of gas conduits 43, and several gas inlets 140 ⁇ 140b, and 140c into several helical grooves 151-i, 151/7, and 151c on reference surface 130
- the rotary movement is obtained by a force of viscosity of the gas
- the allowable range of rotation rates is limited by the design of grooves 51 ⁇ , 51fc,and 51c, and the available gas-flow range
- the minimum rotation rate is constrained by the minimum gas flow required for susceptor sustentation
- the maximum rotation rate is constrained by the increase in the gap between the undersurface of susceptor 14 and reference surface 30 with increasing gas flow, where more and more gas flow bypasses grooves 51 ⁇ , 5lb, and 51c enUrely, resulting in little or no increase in the rotation rate
- Gap between the undersurface of susceptor 14 and reference surface 30 varies with rotation-rate changes. Increasing the rotation rate requires gas-flow increase, which increases the gap. The changes in the gap cause growth temperature variations and produce undesirable effect on epitaxial growth.
- Angular orientation and position of each susceptor 14, 114, 214, or 314 are not directly detectable except by visual inspection.
- the unsupervised loading and unloading of indexed wafers in a reactor chamber require machine-accessible data on the orientations and positions of individual susceptors.
- Rotation rates of susceptors can be determined essentially exactly. Perfect matching of rotation rates between individual susceptors in the planetary device is an inherent characteristic. Different adjustable rotation rates for different susceptors in the planetary device are also possible.
- the rotatable platform with or without the substitution of the sustentation means with other bearing means, would allow for extremely complicated rotation patterns with multiple rotation axis without any complicated mechanical gearing or motor systems.
- the rotatable platform could also be used in a liquid environment, since the principles for its operation do not depend on the specific properties of the gas phase.
- FIG. la is a prior-art exploded and perspective view of a device comprising a susceptor provided with a rotary shaft and a system for setting into rotation in which a force of viscosity of a gas is applied,
- FIG. lb is a prior-art exploded and perspective view of a device permitting the planetary rotation of several susceptors
- FIG. 2a is a sectional view of a basic device according to the invention.
- FIG. lb is a plan view of the susceptor according to FIG. 2a
- FIG. 2c is a plan view of the reference surface and the magnetic actuating assembly according to FIG. 2a.
- FIG. 3a is a perspective view of a second embodiment of a susceptor according to the invention.
- FIG. 3 is a perspective view of a third embodiment of a susceptor according to the invention.
- FIG. 3c is a plan view of a fourth embodiment of a susceptor according to the invention.
- FIG. 4a is a sectional view of a second embodiment of a reference surface for susceptor sustentation according to the invention.
- FIG. 4b is a plan view of the reference surface according to FIG. 4a
- FIG. 4c is a sectional view of a third embodiment of a reference surface for susceptor sustentation according to the invention.
- FIG. 4d is a plan view of the reference surface according to FIG. 4c.
- FIG. 4e is a sectional view of a fourth embodiment of a reference surface for susceptor sustentation with an alternative rotary shaft according to the invention.
- FIG. 4 /is a plan view of the reference surface according to FIG. 4e
- FIG. 5 is a perspective view of a rotating susceptor actuated by two external permanent-magnet rotors mechanically connected to a motor according to the invention
- FIG. 6a is a plan view of an embodiment of a device according to the invention.
- FIG. 6b is a plan view of an alternate embodiment of a device according to the invention.
- FIG. 6c is a sectional view of the device according to FIG. 6b.
- FIG. la is a perspective view of a magnetic flux sensing device based on the Hall effect
- FIG. 7b is a perspective view of a magnetic flux sensing device based on the generation of electromotive force in a coil by magnetic induction
- FIG. 7c is a perspective view of a metal sensing device based on the changes of coil inductance in the presence of metal
- FIG. 8 ⁇ is a graph of electrical currents I A , I B , and I c applied to different magnetic solenoids versus time for one revolution of susceptor rotation,
- FIG. Sb is a graph of electrical currents I A , I B , and I c applied to different magnetic solenoids versus time for one revolution of susceptor rotation, with improved actuation characteristics,
- FIG. 9 is an exploded and perspective view of a preferred embodiment of a device according to the invention.
- FIG. 10a is an exploded and perspective view of a device permitting the planetary rotation of several susceptors according to the invention, not showing the magnetic actuating assembly,
- FIG. I0b is a sectional view of the device according to FIG. 10a.
- FIG. 10c is a plan view of the device according to FIG. 10a.
- a platform in the form of a disk will preferably be chosen, although other platforms of different shapes or structures can be utilized equivalently.
- a platform is equivalent to a stage, a pedestal, a support, a prop, or a stand.
- the basic device according to the invention comprises one or more ferromagnetic elements ll ⁇ , lib, lie, and lid of unmagnetized or magnetized ferromagnetic material, such as cobalt (Co), iron (Fe), nickel (Ni), or the alloys of Co, Fe, Ni, and/or other materials, integrated into a platform or a susceptor 14 rotating parallel to a reference surface 30 about a shaft 20 perpendicular to this surface.
- unmagnetized or magnetized ferromagnetic material such as cobalt (Co), iron (Fe), nickel (Ni), or the alloys of Co, Fe, Ni, and/or other materials
- platform 14 is held in sustentation above the reference surface 30 with a gap h>0 at all points between the undersurface of platform 14 and reference surface 30 by the action of gas flow through one or more gas inlets 40.
- Platform 14 is induced to start rotating, to continue rotating, and/or to stop rotating about shaft 20 by the magnetic interactions between ferromagnetic elements lla, lib, li , lid and an assembly of magnetic actuating means 70.
- actual relative angular orientation and rotation rate of platform 14 can be measured if sensor means are included as a part of assembly 70.
- portions of a reactor-chamber wall 90 are also shown to illustrate the incorporation of the device into a reactor chamber, where assembly 70 is shown positioned outside of the reactor chamber.
- edge 16 of platform 14 is also drawn to aid understanding and visualization.
- Platform 14 may be formed from any kind of hard materials of low deformation, inclusive of polymers.
- these materials For use in an epitaxy chamber, these materials must moreover be refractory. These materials may be: graphite, metals, ceramic materials, crystalline materials, such as silicon, gallium arsenide, sapphire.
- the number of ferromagnetic elements in a susceptor is chosen to be four, for example, although any number one or greater is possible depending on specific application.
- This structure resembles the cross section of a rotor in a direct-current brushless electrical motor Structure 11 allows more efficient pathways for magnetic flux through susceptor 14 and distinct elements for magnetic actuation
- the ferromagnetic elements may be integrated into susceptor 14 by numerous methods They can be pressed into tight-fitting holes drilled in susceptor 14 They can be shaped with external threads by machining to fit into correspondingly threaded holes in susceptor 14 They can be included in a mold or a cast as solid elements if susceptor 14 can be injection-molded or cast at a lower temperature than the melting point of the ferromagnetic material utilized They can be placed in a sandwich between the top half and the bottom half of susceptor 14 before the two halves are fused together by sintering or by adhesive means Many other integration methods are possible
- the ferromagnetic elements may be formed from ferromagnetic powder molded or cast along with the susceptor in a mold with defined magnetic regions, either as a part of the mold or exterior to the mold, where the ferromagnetic powder preferentially converges and forms individual ferromagnetic lumps
- Susceptors shown in FIGS 23 and 3c are preferred for vapor phase epitaxy, because the ferromagnetic elements are placed at the edge of the susceptor in a section not intended to receive a sample, thereby minimizin the temperature variations in the susceptor induced by the different thermal conductivity of the ferromagnetic material
- the choices available for the ferromagnetic material for the ferromagnetic elements are restricted by the hig temperatures of the order of 900°C encountered in a reactor chamber
- the Curie points the temperatures above which individual materials lose ferromagnetic properties, dictate the choice of the ferromagnetic materials Cobalt (Co) with Cune point of - 1131°C is most preferred along with alloys of Co and other materials Iron (Fe with Curie point of -770°C is useful for susceptors encountering lower temperatures
- the ferromagnetic elements may be magnetized or unmagnetized In a reactor chamber, unmagnetized ferromagnetic elements are preferred, because magnetized material quickly changes or loses its permanent magnetic properties when subjected to high temperatures or repeated thermal cycles between room temperature and high temperature 3.
- Susceptor Sustentation is preferred, because magnetized material quickly changes or loses its permanent magnetic properties when subjected to high temperatures or repeated thermal cycles between room temperature and high temperature 3.
- the weight of susceptor 14 is sustained by the gas-pressure difference between the undersurface and the top surface of susceptor 14 with a gap h>0.
- This pressure difference is the result of resi nee encountered by the gas flowing from gas inlet 40 to edge 16 of susceptor 14.
- An equilibrium state is reached when gap h results in the correct amount of resistance encountered by the flowing gas to produce the total gas-pressure difference between the undersurface and the top surface of susceptor 14, when integrated with respect to area over the entire susceptor, that is equal to the weight of susceptor 14 and any weight supported by susceptor 14, for example an epitaxy sample.
- Gas inlet 40 is placed as close as possible to the center of susceptor 14 at shaft 20 to allow for uniform distribution of gas flow radially.
- FIGS. 4 ⁇ , 4b, 4c, 4 ⁇ 4e, and 4/ Several improved systems of susceptor sustentation according to the invention are shown in FIGS. 4 ⁇ , 4b, 4c, 4 ⁇ 4e, and 4/.
- the grooves are preferentially applied to reference surface 30 instead of the undersurface of susceptor 14 to minimize temperature variations in susceptor 14. It is known to those skilled in the art that if structures such as grooves are provided in the back surface of the sample carrier, the thermal image of these structures may appear on the finished epitaxial layers in the form of homogeneity defects.
- FIGS. 4e and 4/ show a possible realization of an alternative form of a shaft 20 by a cut profile of a reference surface 30 and a complementary profile on the undersurface of susceptor 14.
- the cut profile is that of a circular cone truncated at the tip.
- This form of sustentation does not require a separate shaft 20.
- manufacturing such a device requires precise machining and difficult shaping procedures. Therefore it is considered as preferable to choose a localization of susceptor 14 by cylindrical rotary shaft 20.
- These three structures achieve improved stability in susceptor sustentation by widening and equalizing the domains of high pressure-differential between the undersurface and the top surface of susceptor 14.
- These domains of high pressure-differential correspond approximately to where grooves 60 ⁇ , 60b, 60c, and 62 are located.
- the transverse dimension of the grooves may be from one-tenth of a millimeter to several meters and their depth may be from ten micrometers to several centimeters.
- Magnetic actuating assembly 70 shown in FIGS 2 ⁇ and 2c as boxes, will be described in this section
- FIG 5 shows a non-preferred magnetic actuating assembly according to the invention
- Two permanent magneUc rotors 72 with four poles 72 ⁇ , 12b, 12c, and 72d are caused to rotate in the indicated directions by a system 84 of mechanical transmission means driven by motor means
- the polarities of poles 72 ⁇ , 12b, 12c, and 72d are indicated by the letters N and S Possible locations for sensor means 82 ⁇ , 82 ⁇ >, and 82c are also indicated
- a susceptor 14 according to FIG 3 ⁇ is drawn to illustrate the operauon Rotors 72 cause susceptor 14 to rotate at the same rate in the indicated direction
- the polarities of ferromagnetic elements ll ⁇ , lib, lie, and lid are also indicated, if they are to be magnetized
- Additional control electronics 80 and sensor means 82 ⁇ , %2b and 82c can be added to monitor the actual rotation of susceptor 14 and to provide feedback for the confirmation of rotation rate and angular position of susceptor 14
- FIGS 6 ⁇ 6b, 6c, and 9 consisting of two or more magnetic solenoids 74 ⁇ , 14b, 14c, 14d, 14e, and 74/ arranged radially from the center of susceptor 14 Possible locations for sensor means 82 ⁇ , 826, 82c, 82d, 82e, and 82/ are also indicated Also shown are reference surface 30 and reactor-chamber walls 90 Ferromagnetic elements ll ⁇ , l b lie, and lid and susceptor sustentation means have been included for completeness and have been described in previous sections
- magnetic solenoids 74 ⁇ , 14b, and 74c are arranged on one side of susceptor 14 and solenoids 74d, 74e, and 74/ on the other side
- the solenoids are approximately cylind ⁇ cal in shape
- ⁇ is ⁇ /6
- the angular spacing ⁇ results in the efficient placement of magnetic solenoids on the outside of reactor-chamber walls 90, which is not shown in FIG 9
- the solenoids are shaped like the letter L to create a flush surface in the same plane as the top surface of susceptor 14 This illustrates the adaptability of the invention to many different reactor chamber designs Other arrangements of magnetic solenoids can be generated based on the information presente here and the specific application of the device
- Pairs of magneuc solenoids are used at equal distance from susceptor 14 to balance the magnetic force exerted on susceptor 14 If singular magnetic solenoids are used instead of pairs, there will be strong lateral forces applied to susceptor 14 in addition to forces necessary to induce susceptor rotation Magnetic solenoids are placed in the plane of susceptor 14 on opposite ends of a diagonal through susceptor 14 to prevent the application of undesirable vertical forces to lift susceptor 14 or to put additional loads on susceptor 14 To cause rotation of susceptor 14 in the direction indicated by R, individual magnetic solenoids marked with letters A, B, or C on FIGS. 6 ⁇ , 6b, or 9 are supplied with the appropriate current waveforms I A , I B , or I c as shown in FIG.
- Control electronics 80 and sensor means 82 ⁇ , 82b, 82c, 82d, 82c, and 82/ can be added to monitor the actual rotation of susceptor 14 and to provide feedback for the confirmation of rotation rate and angular position of susceptor 14.
- FIGS. 7 ⁇ , lb, and 7e show a magnetic-flux sensing device based on the Hall effect produced on a semiconductor chip, where the magnetic flux as indicated by ⁇ is converted relatively proportionally into an output voltage.
- FIG. lb shows a magnetic-flux sensing device, consisting of coils of electrical conductors, that generates an output voltage proportional to the time-rate change in the magnetic flux indicated by ⁇ .
- FIG. 7e shows the same coil used in a different way to sense metal by measuring the coil-inductance changes induced by the presence of metal.
- These sensors can be placed at the specified locations to detect the presence of ferromagnetic elements ll ⁇ , l b, lie, or lid to confirm the relative angular position or rotation rate of susceptor 14.
- Relative angular position can be determined because the position of ferromagnetic elements are known when the susceptor is made.
- the rotation rate can be determined simply by counting the number of elements detected in a given amount of time or by measuring the time elapsed between detected elements. These two measurements can be made as accurately as the sensor means and the control electronics would allow.
- FIGS. 10a, 10/3, and 10c show a planetary form of susceptor rotation according to the invention.
- a main susceptor 14 with three ferromagnetic elements ll ⁇ , lib, and lie rotates parallel to a reference surface 30 about a shaft 20 perpendicular to this surface.
- Main susceptor 14 is held in sustentation by the action of gas flow through gas inlets 40 ⁇ , 40/3, 40c into sector-shaped depressions or grooves 60 ⁇ , 60/3, and 60c.
- Main susceptor 14 is caused to rotate in the indicated directions by interactions between ferromagnetic elements ll ⁇ , 11/3, and lie and a magnetic actuating assembly 70 containing 48 magnetic solenoids 74 and optionally 48 sensor means 82.
- a cyhnd ⁇ cal-reactor-chamber wall 90 is also shown
- Ma susceptor 14 also includes a number of secondary susceptors 114, 214, and 314 on a reference surface 130 facing away from reference surface 30
- Secondary susceptor 114 is used as an example applicable to secondary susceptors 214 and 314
- Secondary susceptor 114 contains six ferromagnetic elements lll ⁇ , lllfo, 111c, llld, llle, and 111/ Secondary susceptor 114 is held in sustentation by the action of gas flow through an additional gas inlet 42 in reference surface 30, a system of gas conduits 43, and a gas inlet 140 into an annular groove 162 connected to several sector-shaped depressions or grooves 160 ⁇ , 160fc, and 160c on reference surface 130 Similarly, secondary susceptors 114, 214, and 314 are caused to rotate in the indicated directions by interactions between their respective ferromagnetic elements and magnetic actuating assembly 70
- solenoids 74 marked with P are responsible for the rotation of main susceptor 14, those marked with X for secondary susceptor 114, those marked with Y for secondary susceptor 214, and those marked with Z for secondary susceptor 314
- Current waveforms illustrated in FIGS 8 ⁇ or Sb can be applied to these solenoids with minor modifications easily done by those well-versed in the art
- the positions of these letters P, X, Y, and Z shift in time to correspond to the angular orientation of mam susceptor 14
- the rotation rates of individual susceptors 14, 114, 214, and 314 can be independently controlled in this fashion, thereby allowing for extremely complicated rotation patterns
- rotation rates and angular orientation of individual susceptors can be confirmed and measured, allowing for possible immediate fault-correction by control electronics 80 or a human operator
- the ferromagnetic elements may be square or oval
- the susceptor or platform may be a square, a polygon, or shaped to fit a particular workpiece
- the grooves on the reference surface can be stripes, patches, concentric annular ⁇ ngs, or many other combinations to achieve similar effects in susceptor sustentation
- the design of the magnetic actuating assembly allows an enormous amount of freedom to adapt to specific applications, such as water-cooling for magnetic solenoids, integration of solenoids into the reactor-chamber wall, or improved magnetic circuits to allow for better efficiency.
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Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52169096A JP2001523391A (en) | 1995-01-09 | 1995-12-26 | Rotary susceptor with integrated ferromagnetic element |
EP95944414A EP0871804B1 (en) | 1995-01-09 | 1995-12-26 | Rotatable susceptor with integrated ferromagnetic element |
AT95944414T ATE210747T1 (en) | 1995-01-09 | 1995-12-26 | ROTATING SUSSCEPTOR WITH INTEGRATED FERROMAGNETIC ELEMENT |
DE69524640T DE69524640T2 (en) | 1995-01-09 | 1995-12-26 | ROTATING SUSCEPTOR WITH INTEGRATED FERROMAGNETIC ELEMENT |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/370,167 US5468299A (en) | 1995-01-09 | 1995-01-09 | Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface |
US08/370,167 | 1995-01-09 |
Publications (1)
Publication Number | Publication Date |
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WO1996021757A1 true WO1996021757A1 (en) | 1996-07-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US1995/016945 WO1996021757A1 (en) | 1995-01-09 | 1995-12-26 | Rotatable susceptor with integrated ferromagnetic element |
Country Status (7)
Country | Link |
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US (1) | US5468299A (en) |
EP (1) | EP0871804B1 (en) |
JP (1) | JP2001523391A (en) |
AT (1) | ATE210747T1 (en) |
CA (1) | CA2206828A1 (en) |
DE (1) | DE69524640T2 (en) |
WO (1) | WO1996021757A1 (en) |
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- 1995-01-09 US US08/370,167 patent/US5468299A/en not_active Expired - Lifetime
- 1995-12-26 DE DE69524640T patent/DE69524640T2/en not_active Expired - Fee Related
- 1995-12-26 CA CA002206828A patent/CA2206828A1/en not_active Abandoned
- 1995-12-26 EP EP95944414A patent/EP0871804B1/en not_active Expired - Lifetime
- 1995-12-26 JP JP52169096A patent/JP2001523391A/en active Pending
- 1995-12-26 WO PCT/US1995/016945 patent/WO1996021757A1/en active IP Right Grant
- 1995-12-26 AT AT95944414T patent/ATE210747T1/en not_active IP Right Cessation
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US4860687A (en) * | 1986-03-21 | 1989-08-29 | U.S. Philips Corporation | Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface |
JPH01184277A (en) * | 1988-01-18 | 1989-07-21 | Matsushita Electric Ind Co Ltd | Substrate rotating device |
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Also Published As
Publication number | Publication date |
---|---|
JP2001523391A (en) | 2001-11-20 |
US5468299A (en) | 1995-11-21 |
DE69524640T2 (en) | 2002-05-08 |
ATE210747T1 (en) | 2001-12-15 |
DE69524640D1 (en) | 2002-01-24 |
EP0871804B1 (en) | 2001-12-12 |
CA2206828A1 (en) | 1996-07-18 |
EP0871804A1 (en) | 1998-10-21 |
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