DE102020107517A1 - Susceptor for a CVD reactor - Google Patents

Abstract

The invention relates to a CVD reactor with a susceptor (2) that can be driven in rotation about an axis of rotation (A) by a rotary drive (24), with a first broad side surface (2 ') facing a process chamber (4) on which a plurality of storage locations ( 22) for receiving substrates (21) to be treated are arranged around the axis of rotation (A), with a second broadside surface (2 ") pointing away from the first broadside surface, which has a heating device (8) for heating the susceptor (2) to a process temperature opposite and with gas outlet openings (10, 15, 18) opening into a space between the heating device (8) and the second broad side surface (2 ") of the susceptor (2) for feeding a temperature gas into the space. In order to be able to locally influence the heat transport between heating device 8 and susceptor 2, it is provided that the gas outlet openings (10, 15, 18) are arranged in the second broad side surface (2 ″) of the susceptor (2) and at least one for each storage space (22) the gas outlet openings (10, 15, 18) is spatially assigned.

Description

Field of technology

The invention relates to a susceptor for a CVD reactor with two broad side surfaces pointing away from one another. A first of the two broad side surfaces has a large number of storage spaces, each for receiving one or more substrates. The storage locations are arranged in a circle around an axis of rotation of the susceptor.

The invention also relates to a CVD reactor for the thermal treatment of substrates with such a susceptor, the first broad side surface of the susceptor facing a process chamber into which process gases are fed. The second broad side surface points in the direction of a heating device with which the susceptor is heated to a process temperature. The heating device lies opposite the second broad side surface. There is a space between the second broad side surface and the heating device. The gas outlet openings with which a gas is fed into the spacing open into this spacing space.

The invention also relates to a method for the thermal treatment of substrates in such a CVD reactor, in which a gas is fed into the space between the heating device and the second broad side surface of the susceptor.

State of the art

In the DE 10 2019 104 433 A1 describes a CVD reactor with a susceptor. On the susceptor are substrate holders that can hold one or more substrates. The substrate holders each lie in pockets that form a storage space and are driven in rotation. Between the heating device and a second broad side surface of the susceptor there is a sealing plate with which a space within the housing of the CVD reactor, in which the heating device is located, is shielded from the process gas fed into the process chamber. A temperature control gas is fed into a space between the heating device and the second broad side surface of the susceptor. With the temperature control gas flow, the heat inflow or the heat dissipation to or from the susceptor can be changed at locally restricted heat-influencing zones. The tempering gas is fed in through fixed gas outlet openings. The gas outlet openings are arranged in the sealing plate. The heat flow from the heating device to the substrate can be varied individually by means of a periodically pulsed supply of the temperature control gas.

the US 6,569,250 B2 describes a susceptor with a gas outlet opening. The prior art also includes DE 10 2005 056 536 A1 , DE 10 2009 043 960 A1 , DE 10 2011 053 498 A1 , DE 10 2013 109 155 A1 , DE 10 2014 104 218 A1 , DE 10 2017 105 333 A1 , US 2018/0182635 A1 , U.S. 5,468,299 A and the DE 10 2011 055 061 A1 .

the DE 10 2009 044 276 A1 describes a discharge line which opens into a space between the susceptor and the heating device and with which a gas can be discharged from a pocket arranged below a substrate holder.

the DE 10 2018 130 138 A1 describes a CVD reactor with a susceptor, in which the susceptor has gas outlet openings in its surrounding edge.

the DE 10 2018 132 673 A1 describes a CVD reactor in which gas outlet openings open into the broad side surfaces of the susceptor facing the process chamber.

Summary of the invention

The invention is based on the object of specifying an alternative method or an alternative device with which the susceptor temperature can be influenced locally in order to be able to individually adapt the surface temperatures of substrates arranged in storage locations.

As with the one mentioned at the beginning DE 10 2019 104 433 In a variant of the invention, gases, in particular tempering gases, whose heat-conducting property can be changed by changing a mixing ratio of two flushing gases forming the tempering gas, one of which has a high thermal conductivity and the other a low thermal conductivity, are fed into a space between the storage space and the heating device. The feed takes place from the susceptor through a gas outlet opening which rotates with the susceptor and which has a permanently unchangeable spatial position in relation to a storage location on which a substrate can rest. According to the invention, at least one gas outlet opening is assigned to each storage space. Each gas outlet opening that rotates with the susceptor is connected to a feed line with a feed opening. It can be provided that one or more gas outlet openings, which are assigned to the same storage space, are assigned to a common feed opening. However, it can also be provided that each feed opening is connected to only one gas outlet opening. The device according to the invention preferably has a gas mixing device with which the temperature control gas is provided will. The gas mixing device can have a plurality of mass flow controllers, each mass flow controller preferably being flow-connected to only one feed opening, so that an individual gas flow and in particular an individual gas mixture can be assigned to each outlet opening of each plurality of outlet openings assigned to the same storage space. As a result, an individual temperature gas atmosphere can be set between each storage space for a substrate and the heating device. As a result, the heat inflow or the heat dissipation to or from the substrate can be changed locally. In relation to the susceptor, the heat-influencing zones arranged below the storage locations are fixed. With respect to a reactor housing in which the susceptor rotates, the heat-affected zones migrate around the axis of rotation of the susceptor. In the method according to the invention, at least one of the gas outlet openings arranged in the second broad side surface of the susceptor is assigned to each storage location. It is a spatial assignment. The assignment is also functional, since the temperature control gas flowing out of the gas outlet opening flows into the heat-influencing zone arranged between the storage space and the heating device. In each heat-influencing zone, the temperature control gas atmosphere can be set individually, either by changing the mass flow of a temperature control gas that mixes with an ambient gas or by changing the composition of a temperature control gas consisting of several components, whereby the different components can have different thermal conductivity properties, for example from Hydrogen and nitrogen can exist. A process chamber delimited towards the bottom by the first, upper broad side surface of the susceptor is delimited towards the top by a cover plate. The ceiling plate can be cooled actively or passively. A gas inlet element is provided with which process gases are fed into the process chamber. The gas inlet element can extend in the area of the axis of rotation. The central gas inlet element has several gas outlet openings arranged in a circumferential surface, through which the process gas can flow into the process chamber. The process gas is provided in the gas mixing system and can contain various reactive gases which react with one another within the process chamber, preferably on the surface of the substrate, in such a way that a layer is deposited on the substrate. The process gases can contain hydrides of main group III and organometallic compounds of main group V. The process gases can, however, also contain elements of main group IV or elements of main group II and VI. A semiconducting and monocrystalline layer is preferably deposited on the substrate. The process gas flows through the process chamber in a radial direction and is discharged by means of a gas outlet element which surrounds the preferably circular disk-shaped susceptor in an annular manner. The gas outlet element can have openings or the like in order to also discharge the temperature control gas. The storage spaces can be formed by pockets arranged in the first broad side surface of the susceptor. Outlet openings through which a purge gas enters the pockets are provided in the bottoms of the pockets. The flushing gas forms a gas cushion which carries a substrate holder on which the substrate to be coated rests. The substrate holder is also set in rotation with the flushing gas flow. According to a preferred embodiment, at least one gas outlet opening is provided for each storage space, this gas outlet opening being arranged between the center of the susceptor and the storage space. The temperature control gas emerging from the gas outlet opening flows below the storage area in a radially outward direction. The opening width of the gas outlet opening can correspond to the diameter of a supply line, for example it can be circular. The outlet opening can, however, also be elongated. You can extend straight or curved. The gas outlet opening preferably extends over a sector area over which the storage space also extends. A plurality of gas outlet openings can be provided which are arranged one behind the other in the radial direction, that is to say are at different radial distances from the center. A second gas outlet opening can, for example, be arranged vertically below the storage space. Another gas outlet opening can be arranged radially outside the storage area. If several gas outlet openings are provided for each storage space, they are arranged identically at each storage space. Even if only one gas outlet opening is provided, all of these gas outlet openings are preferably at the same radial distance from the center. The gas outlet openings are supplied with the temperature control gas preferably through the susceptor and preferably additionally through a shaft carrying the susceptor. For this purpose, feed lines formed by bores run within the susceptor, for example in the radial direction. A feed line is preferably assigned to each gas outlet opening. The feed lines can have an outwardly facing feed opening in the area of the shaft. This rotates around the axis of rotation as the susceptor rotates. Through a suitable ring-shaped gas distribution chamber surrounding the shaft, each feed opening can be supplied with temperature control gas during the rotation. The feed openings that are assigned to the various gas outlet openings are preferably one above the other in the axial direction, based on the axis of rotation. In the method according to the invention, an optical or other temperature measuring device can be provided with which the surface temperature of each substrate or each storage space can be measured. With a stationary, in particular optical temperature measuring device, for example with a pyrometer, the substrate temperature can be measured through an opening in the process chamber ceiling. In the course of the rotation of the susceptor, the substrates move past below the temperature measuring device, so that the temperatures of all substrates can be determined one after the other. With a control device, the temperature control gas flows assigned to the individual substrates can be changed in such a way that the substrates have essentially the same surface temperature. By feeding in a second temperature control gas, it is also possible to modify a lateral temperature profile on the substrate or a surface temperature of the susceptor downstream of the substrate. In a variant of a CVD reactor according to the invention, the energy is transported from the heating device to the susceptor via an electromagnetic alternating field which induces eddy currents in the susceptor which heat the susceptor. The heating device can be a cooled induction coil. The induction coil can be located in a spiral in a plane below the susceptor. The coil can be formed by a tube through which a coolant flows. The heat transport from the susceptor to a coil cooled in this way takes place in part by heat conduction through the gas located in the space between the susceptor and the heating device. The heat flow from the susceptor to the heating device can thus be adjusted or influenced locally and individually for each storage location by varying the composition of the temperature control gas.

It can also be provided that a flushing gas flow is fed into the gap between the lower broad side surface of the susceptor and the sealing plate. The flushing gas flow can be fed in at a position arranged radially inward of the storage space and in particular in the immediate vicinity of a central carrier of the susceptor. One or more purging gas feed lines can open into the gap there, so that a radial gas flow is formed between the susceptor and the sealing plate. The gas flow emerging from the abovementioned gas outlet openings can enter this flushing gas flow. The flushing gas flow and the gas flow emerging from the gas outlet openings that open there mix. It can be provided that the two gases have different thermal conductivity properties, so that the mixing of the two gas flows forms a temperature gas flow whose thermal conductivity can be adjusted by changing the mass flow of at least one of the two gases. In a variant of the invention it is provided that the gas outlet opening opening into the lower broad side surface of the susceptor opens into a recess in the underside of the susceptor. The recess can extend over the sector that the storage space occupies. The recess is open in particular to the peripheral edge of the susceptor. This forms a section of the gap between the susceptor and the sealing plate which has a larger gap width in the area of a storage area. The recess can widen in the radial direction and have walls extending in the radial direction.

Figure list

• 1 in der Art eines Schnittes durch eine Drehachse A eines Suszeptors 2 schematisch den Querschnitt eines CVD-Reaktors eines ersten Ausführungsbeispiels,
• 2 in der Art eines Schnittes gemäß der Schnittlinien II-II in 1 eine Draufsicht auf einen Suszeptor 2,
• 3 ähnlich wie 1 einen Querschnitt eines CVD Reaktor eines zweiten Ausführungsbeispiels,
• 4 einen Sektor eines Suszeptors 2 in der Unteransicht eines dritten Ausführungsbeispiels und
• 5 einen Ausschnitt eines Gasmischsystems.
• 6 eine Darstellung gemäß 3 eines dritten Ausführungsbeispiels,
• 7 in einer Darstellung gemäß 4 das dritte Ausführungsbeispiel,
• 8 das dritte Ausführungsbeispiel in einer Blickrichtung VIII in 7.

Embodiments of the invention are explained below with reference to the accompanying drawings. Show it:

• 1 in the manner of a section through an axis of rotation A. of a susceptor 2 schematically the cross section of a CVD reactor of a first embodiment,
• 2 in the manner of a cut according to the section lines II-II in 1 a top view of a susceptor 2 ,
• 3 similar to 1 a cross section of a CVD reactor of a second embodiment,
• 4th one sector of a susceptor 2 in the bottom view of a third embodiment and
• 5 a section of a gas mixing system.
• 6th a representation according to 3 a third embodiment,
• 7th in a representation according to 4th the third embodiment,
• 8th the third embodiment in a viewing direction VIII in 7th .

Description of the embodiments

the 1 and 3 show, in the manner of a cross section, schematically a CVD reactor with a housing that is gas-tight to the outside 1 . In the case 1 there is a susceptor 2 , which is formed by a graphite plate, in particular coated, supported by a shaft 14th which is carried by a rotary drive 24 around an axis of rotation A. is driven in rotation. Below the susceptor 2 there is a heating device 8th , which can be an IR heater, an RF heater, or the like. The heating device 8th provides heat with which the susceptor 2 can be heated to a process temperature of 500 to 1500 ° C. Between the heater 8th and one of a broad face 2 " formed underside of the susceptor 2 there is a circular disk-shaped sealing washer 9 that come from a ceramic material, quartz, metal or coated graphite. The sealing washer 9 has an opening in its center through which the shaft, which is driven in rotation during operation of the device 14th protrudes. The sealing washer 9 is opposite the case 1 and the heater attached to the housing 8th stationary. The susceptor 2 thus rotates with respect to the sealing washer 9 . Between the sealing washer 9 and the susceptor 2 there is a gap 23 . The gap 23 has gap walls that move against one another during operation of the device, namely the second, downward-facing broad side 2 " of the substrate holder and the upward facing broad side of the sealing plate 9 . A purge gas generally flows in this gap in a radially outward direction. For this purpose, a purge gas feed line opens into the gap 28 with a purge gas outlet opening 27 . On one through an outlet opening 10 in the 1 or through outlet openings 10 , 15th , 18th in the 3 in the gap 23 The gas fed in is transported to the outside with the purge gas. In addition, a shear force is exerted, which has the consequence that a gas flow, for example through the gas outlet opening 10 in the gap 23 is fed, is deflected on its way in the radially outward direction in the direction of the susceptor rotation.

The first broadside surface 2 ' of the susceptor 2 leading to a process chamber 4th has and the second broadside surface 2 " of the susceptor 2 opposite, has a pocket forming a storage space 22nd , in which there is a substrate holder 3 is located on which a substrate 21 rests. By a not shown, in the bottom of the bag 22nd arranged gas nozzle, a flushing gas can be fed in, with which a gas cushion is generated, on which the substrate holder, which is also driven in rotation by the gas cushion 3 floats.

In the center of the process chamber 4th there is a gas inlet element 6th , through which the above-mentioned process gases can be fed into the process chamber. The process gases flow over the susceptor 2 and the substrates 21 and arrive at a gas outlet member 7th which is the susceptor 2 surrounds ring-shaped. The process chamber is at the top 4th through an actively or passively cooled or heated process chamber ceiling 5 limited.

The outer edge of the sealing disk lies on a radially inner edge of the gas outlet element 7th on. The sealing washer 9 thus seals the space of the housing of the CVD reactor from the process gas.

In the shaft 14th a large number of feed openings are located one above the other and offset around the circumference 13th into which a temperature gas can be fed. Every feed opening 13th is connected to a feed line that connects each feed opening 13th individually with one in the gap 23 opening gas outlet opening 10 , 15th or 18th connects. For this purpose, the shaft has supply lines extending in the axial direction 12th , 17th and 20th and the susceptor connected thereto and extending in the radial direction 11 , 16 , 19th .

Each of the supply lines or feed openings 13th can with two mass flow controllers 25th , 26th be connected to the flow. With the two mass flow controllers 24 , 26th a gas mixture can be provided in each case, which consists of a highly thermally conductive gas, for example hydrogen, and a less thermally conductive gas, for example nitrogen. However, it is also provided that the feed lines or feed openings 13th are only connected to a gas source or a mass flow controller that provide a purge gas that has a different thermal conductivity than the gas that is otherwise present in the interior of the housing.

The one in the 1 and 2 illustrated embodiment is each storage space 12th individually a gas outlet opening 10 assigned through which an individual temperature gas flow or an individual temperature gas mixture in the space below the susceptor 2 can be fed, which is below the storage area 22nd is located. This increases the heat transfer between the heating device 8th and the susceptor 2 influenced. The gas outlet opening 10 is in such a way radially inwardly opposite the storage place 22nd offset that the from the gas outlet opening 10 Exiting temperature gas flow in a radial outward direction under the storage area 22nd flows along. In the 2 are the gas outlet openings 10 on a line connecting the center of the bin 22nd or the substrate holder 3 and the axis of rotation A. arranged. The gas outlet openings 10 but can also be arranged offset in the circumferential direction to this connecting line and in particular offset in such a way that the above-described shear force the temperature control gas during its flow in the direction below the storage space 22nd promotes.

The one in the 3 illustrated embodiment is in addition to the first gas outlet opening 10 one roughly in the middle of the storage area 22nd arranged further gas outlet opening 15th intended. In addition, there is one radially outside the storage area 2 or at the radially outer edge of the storage area 22nd arranged further gas outlet opening 18th provided, with which the temperature profile can be further influenced by feeding in a suitable gas mixture or a suitable gas flow. These further gas outlet openings too 15th , 18th can on one Line connecting the center of the storage area 22nd with the axis of rotation A. or be arranged offset to it.

the 4th shows an example of a variant of a design of the gas outlet openings 10 , 15th , 18th . They are curved, straight or curved depressions in the underside 2 " of the susceptor 2 arranged. The depressions extend in particular in the circumferential direction around the axis of rotation A. . They can have a length that extends roughly over the sector of the circle that the storage bin 22nd occupies.

The one in the 6th until 8th The third exemplary embodiment shown opens into a purge gas outlet opening 27 a purge gas supply line 28 in the gap 23 between the broadside surface 22 ' of the susceptor 2 and the sealing plate 9 . Through the purge gas supply line 28 can a purge gas into the gap 23 are fed, which flows through the gap in the radial direction. The purge gas outlet opening 27 is radially inward from the bin 22nd arranged offset, so that from the purge gas outlet opening 27 purging gas escaping under the storage area 22nd flowing along. A gas outlet opening 10 for feeding in another gas is in the one for the sealing plate 9 pointing broadside surface 22 ' of the susceptor 2 arranged. Through the gas outlet opening 10 a gas can emerge whose thermal conductivity differs from the thermal conductivity of the gas that through the flushing gas outlet opening 27 in the gap 23 entry. By varying the mass flow of at least one of the two gases, the thermal conductivity of the gas below the storage area can be increased 22nd to be changed.

In the in the 6th until 8th The illustrated embodiment is under each storage location on the storage location 22nd broadside pointing away 22 ' of the susceptor 2 a recess 29 intended. The recess 29 has a bottom surface that is parallel to the broadside surface 22 ' of the susceptor 2 runs. The recess 29 is to the perimeter of the susceptor 2 open and has two walls that extend substantially in the radial direction. The gas outlet opening 10 opens radially inside the storage area 22nd into the recess 29 . That from the gas outlet 10 escaping gas enters the recess 29 and flows through the recess 29 in the radial direction up to its opening, from where the gas enters the gas outlet element 7th flows. The two side walls extending essentially in the radial direction 29 ' the recess 29 are outside the scope of the storage space 22nd . The bottom 29 "of the recess 29 has a distance from the recess 29 surrounding broadside surface 22 ' , which is much smaller than half the material thickness of the susceptor 2 and in particular is less than a quarter of the material thickness of the susceptor 2 . With the recess 29 becomes the one from the gas outlet opening 10 exiting gas stream kept in a peripheral zone, which is below the storage area 22nd is located. The walls 29 ' the recess have a gas-conducting function.

The heating device 8th can be formed by one or more spiral tubes through which a cooling liquid flows. A heat flow forms between the hot second broad side surface 2 " of the susceptor 2 and the colder heater 8th the end. The spirally running tubes form a coil that generates an alternating electromagnetic field in the electrically conductive susceptor 2 Eddy currents are induced by those of the susceptor 2 is heated.

The above explanations serve to explain the inventions covered by the application as a whole, which also develop the state of the art independently at least through the following combinations of features, whereby two, more or all of these combinations of features can also be combined, namely:

A device which is characterized in that in the second broad side surface 2 " Gas outlet openings 10 , 15th , 18th are provided, with each storage bin 22nd at least one of the gas outlet openings 10 , 15th , 18th is spatially assigned.

A device which is characterized in that the gas outlet openings 10 , 15th , 18th in the second broadside surface 2 " of the susceptor 2 are arranged and each bin 22nd at least one of the gas outlet openings 10 , 15th , 18th is spatially assigned.

A method that is characterized in that each bin 22nd at least one of the in the second broadside surface 2 " of the susceptor 2 arranged gas outlet openings 10 , 15th , 18th is assigned, through which a gas flow flows.

A device which is characterized in that the spacing space is formed by a gap 23 between a sealing plate 9 and the second broadside surface 2 " of the susceptor 2 is formed and / or that a sealing plate 9 between susceptor 2 and heater 8th sits.

A method, which is characterized in that the susceptor 2 compared to one between the second broad side surface 2 " of the susceptor 2 and the heater 8th seated, opposite a housing 1 stationary sealing plate 9 is driven in rotation and the gas enters the from a gap between the sealing plate 9 and the second broadside surface 2 " of the susceptor 2 formed spacing space is fed.

A device which is characterized in that one in the axis of rotation A. arranged gas inlet member 6th and an annular susceptor about the circular plan 2 arranged gas outlet member 7th are provided and / or that at least one gas outlet opening 10 between axis of rotation A. and the assigned storage location 22nd is arranged and / or that each gas outlet opening 10 , 15th , 18th with at least one supply line 11 , 12th , 16 , 17th , 19th , 20th with a feed opening 13th is fluidly connected to the one from a mass flow controller 25th individually adjustable gas flow of a temperature gas can be fed.

A method, which is characterized in that with one in the axis of rotation A. arranged gas inlet member 6th a gas flow containing process gases into the process chamber 4th is fed in in the radial direction through the process chamber 4th flows through it and by means of an annular susceptor, which has a circular outline 2 arranged gas outlet member 7th is discharged and / or that the gas by means of the gas outlet element 7th is discharged and / or that the from at least one between the axis of rotation A. and assigned storage location 2 arranged gas outlet opening 10 Exiting gas flow of a temperature gas from a mass flow controller 25th is set individually and / or that the gas is under the bin 22nd flows through.

A device which is characterized in that between a first, intermediate axis of rotation A. and storage place 22nd arranged gas outlet opening 10 and a radially outer edge of the susceptor 2 at least one second gas outlet opening 15th , 18th is arranged and / or that a second gas outlet opening 15th , 18th below the storage area 22nd or between storage space 22nd and a radially outer edge of the susceptor 2 is arranged and / or that the first and / or second gas outlet openings 10 , 15th , 18th of elongated, straight or curved depressions in the second broad side surface 2 " are formed and / or that one of the gas outlet openings 10 , 15th , 18th training deepening over a storage area 22nd filling sector and / or a gas mixing system with a first source provides at least a first purge gas and / or with a second source a second purge gas, the purge gases differing in their thermal conductivity and / or with a gas mixing system a gas flow and / or an adjustable mixture a flow of two purge gases to a plurality of mass flow controllers 25th is distributed and / or that at least the in the various storage locations 22nd spatially assigned gas outlet openings 10 , 15th , 18th purge gases that are fed in and form the gas flows are individually adjustable and / or that in a gap ( 23 ) between susceptor ( 2 ) and a sealing plate ( 9 ) radially inward of the storage area ( 22nd ) a purge gas outlet opening ( 27 ) for feeding a purge gas into the gap ( 23 ) is provided and / or that the heating device ( 8th ) facing broadside surface ( 2 ' ) of the susceptor ( 2 ) one over one of the storage place ( 22nd ) occupied sector extending recess ( 29 ), into which the gas outlet opening ( 10 ) opens.

A method, which is characterized in that a first gas flow between the axis of rotation A. and storage place 22nd and a second gas flow below a storage area 2 or between storage space 2 and an outer edge of the susceptor 2 is fed into the spacing space and / or that the first gas flow and / or the second gas flow by means of an elongated, straight or curved recess in the second broad side surface 2 " is fed, and / or that the depression is located via a storage area 22nd filling sector and / or a gas mixing system with a first source provides at least a first purge gas and / or with a second source a second purge gas, the purge gases differing in their thermal conductivity and / or with a gas mixing system a gas flow and / or an adjustable mixture a flow of two purge gases to a plurality of mass flow controllers 25th is distributed and / or that at least the in the various storage locations 22nd spatially assigned gas outlet openings 10 , 15th , 18th fed in, the purge gases forming the gas flows are individually adjustable.

All the features disclosed are essential to the invention (individually, but also in combination with one another). The disclosure of the application hereby also includes the full content of the disclosure content of the associated / attached priority documents (copy of the previous application), also for the purpose of including features of these documents in the claims of the present application. The subclaims characterize, even without the features of a referenced claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications on the basis of these claims. The invention specified in each claim can additionally have one or more of the features provided in the above description, in particular provided with reference numbers and / or specified in the list of reference numbers. The invention also relates to design forms in which some of the features mentioned in the description above are not implemented, in particular insofar as they are recognizable for the respective purpose or can be replaced by other technically equivalent means.

List of reference symbols

1

casing

2

Susceptor

2 '

Broadside surface

2 "

Broadside surface

3

Substrate holder

4th

Process chamber

5

Process chamber ceiling

6th

Gas inlet element

7th

Gas outlet member

8th

Heating device

9

Sealing plate

10

Gas outlet opening

11

Supply line

12th

Supply line

13th

Feed opening

14th

shaft

15th

Gas outlet opening

16

Supply line

17th

Supply line

18th

Gas outlet opening

19th

Supply line

20th

Supply line

21

Substrate

22nd

Bag, bin

23

gap

24

Rotary drive

25th

Mass flow controller

26th

Mass flow controller

27

Purge gas outlet opening

28

Purge gas supply line

29

Recess

29 '

Side wall

A.

Axis of rotation

QUOTES INCLUDED IN THE DESCRIPTION

This list of the documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• DE 102019104433 A1 [0004]
• US 6569250 B2 [0005]
• DE 102005056536 A1 [0005]
• DE 102009043960 A1 [0005]
• DE 102011053498 A1 [0005]
• DE 102013109155 A1 [0005]
• DE 102014104218 A1 [0005]
• DE 102017105333 A1 [0005]
• US 2018/0182635 A1 [0005]
• US 5468299 A [0005]
• DE 102011055061 A1 [0005]
• DE 102009044276 A1 [0006]
• DE 102018130138 A1 [0007]
• DE 102018132673 A1 [0008]
• DE 102019104433 [0010]

Claims (10)

Device in the form of a susceptor (2) that can be driven in rotation about an axis of rotation (A) for a CVD reactor with a first broad side surface (2 '), on which a plurality of storage spaces (22) for receiving substrates (21) to be treated about the axis of rotation ( A) are arranged around, with a second broadside surface 2 "facing away from the first broadside surface (2 '), characterized in that gas outlet openings (10, 15, 18) are provided in the second broadside surface (2"), each storage space (22 ) at least one of the gas outlet openings (10, 15, 18) is spatially assigned. Device for the thermal treatment of substrates (21) with a susceptor (2) which can be driven in rotation about an axis of rotation (A) by a rotary drive (24), with a first broad side surface (2 ') facing a process chamber (4) on which a plurality of Storage spaces (22) for receiving substrates (21) to be treated are arranged around the axis of rotation (A), with a second broadside surface (2 ") facing away from the first broadside surface, which has a heating device (8) for heating the susceptor (2) a process temperature is opposite and with gas outlet openings (10, 15, 18) opening into a spacing space between the heating device (8) and the second broad side surface (2 ") of the susceptor (2) for feeding a temperature control gas into the spacing space, characterized in that the gas outlet openings (10, 15, 18) are arranged in the second broad side surface (2 ") of the susceptor (2) and each storage space (22) has at least one of the gas outlet openings (10, 15, 18) r is spatially assigned. Method for the thermal treatment of substrates (21), in which a susceptor (2) is driven to rotate about an axis of rotation (A), on a first broad side surface (2 ') facing a process chamber (4) a plurality of about the axis of rotation (A) carries substrates (21) arranged around on storage spaces (22) and is heated to a process temperature by a heating device (8) which is opposite a second broadside surface (2 ") pointing away from the first broadside surface (2 '), with a space between a gas is fed into the heating device (8) and the second broadside surface (2 ") of the susceptor (2) through gas outlet openings (10, 15, 18) opening there, characterized in that each storage space (22) has at least one of the in the second broadside surface (2 ″) of the susceptor (2) is assigned to gas outlet openings (10, 15, 18) through which a gas flow flows. Device according to Claim 1 , characterized in that the spacing space is formed by a gap (23) between a sealing plate (9) and the second broad side surface (2 ") of the susceptor (2) and / or that a sealing plate (9) between susceptor (2) and heating device (8) sits. Procedure according to Claim 2 , characterized in that the susceptor (2) is driven in rotation with respect to a sealing plate (9) which is seated between the second broad side surface (2 ") of the susceptor (2) and the heating device (8) and is stationary with respect to a housing (1) and the gas in the space formed by a gap between a sealing plate (9) and the second broad side surface (2 ") of the susceptor (2) is fed. Device according to one of the preceding claims, characterized in that a gas inlet element (6) arranged in the axis of rotation (A) and an annular gas outlet element (7) arranged around the susceptor (2) having a circular outline are provided and / or that at least one Gas outlet opening (10) is arranged between the axis of rotation (A) and the associated storage space (22) and / or that each gas outlet opening (10, 15, 18) with at least one supply line (11, 12, 16, 17, 19, 20) with a Feed opening (13) is flow-connected, into which a gas flow of a temperature gas can be fed that is individually adjustable by a mass flow controller (25). Method according to one of the preceding claims, characterized in that a gas inlet element (6) arranged in the axis of rotation (A) is used to feed a gas flow containing process gases into the process chamber (4), which flows through the process chamber (4) in the radial direction and is ring-shaped gas outlet element (7) arranged around the susceptor (2) having a circular outline is discharged and / or that the gas is discharged by means of the gas outlet element (7) and / or that the from at least one between the axis of rotation (A) and the assigned storage space ( 2) arranged gas outlet opening (10), the exiting gas flow of a temperature gas is set individually by a mass flow controller (25) and / or that the gas flows through under the storage space (22). Device according to one of the preceding claims, characterized in that at least one second gas outlet opening (15, 18) is arranged between a first gas outlet opening (10) arranged between the axis of rotation (A) and storage space (22) and a radially outer edge of the susceptor (2) and / or that a second gas outlet opening (15, 18) is arranged below the storage space (22) or between the storage space (22) and a radially outer edge of the susceptor (2) and / or that the first and / or second gas outlet openings (10, 15, 18) are formed by elongated, straight or curved depressions in the second broad side surface (2 ") and / or that one of the gas outlet openings (10, 15, 18) forming recess extends over a sector filling the storage space (22) and / or that a gas mixing system with a first source provides at least a first flushing gas and / or with a second source a second flushing gas, the flushing gases differing in their thermal conductivity and / or with a gas mixing system a gas flow and / or an adjustable mixture of a flow of two purge gases is distributed to a plurality of mass flow controllers (25) and / or that at least the gas outlet openings (10, 15, 18) spatially assigned to the various storage locations (22) are fed, the purge gases forming the gas flows are individually adjustable and / or that in a gap (23) between the susceptor r (2) and a sealing plate (9) radially inward of the storage space (22) a flushing gas outlet opening (27) for feeding a flushing gas into the gap (23) is provided and / or that the broad side surface (2 ') facing the heating device (8) of the susceptor (2) has a recess (29) which extends over a sector occupied by the storage space (22) and into which the gas outlet opening (10) opens. Method according to one of the preceding claims, characterized in that a first gas flow between the axis of rotation (A) and storage space (22) and a second gas flow below a storage space (2) or between storage space (2) and an outer edge of the susceptor (2) in the spacing space is fed in and / or that the first gas flow and / or the second gas flow is fed into the second broad side surface (2 ") by means of an elongated, straight or curved recess, and / or that the recess extends over a storage space ( 22) filling sector and / or that a gas mixing system with a first source provides at least a first purge gas and / or with a second source a second purge gas, wherein the purge gases differ in their thermal conductivity and / or with a gas mixing system a gas flow and / or an adjustable mixture of a flow of two purge gases distributed to a plurality of mass flow controllers (25) and / or that at least the purging gases that are fed into the gas outlet openings (10, 15, 18) spatially assigned to the various storage locations (22) and that form the gas flows can be set individually. Device or method, characterized by one or more of the characterizing features of one of the preceding claims.

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