WO1996019753A1 - Procede de gravure de couche de fond antireflet par i-line selectif - Google Patents

Procede de gravure de couche de fond antireflet par i-line selectif Download PDF

Info

Publication number
WO1996019753A1
WO1996019753A1 PCT/US1995/014302 US9514302W WO9619753A1 WO 1996019753 A1 WO1996019753 A1 WO 1996019753A1 US 9514302 W US9514302 W US 9514302W WO 9619753 A1 WO9619753 A1 WO 9619753A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
barl
gas
line
substrate
Prior art date
Application number
PCT/US1995/014302
Other languages
English (en)
Inventor
Subhash Gupta
Chris F. Lyons
Original Assignee
Advanced Micro Devices, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices, Inc. filed Critical Advanced Micro Devices, Inc.
Publication of WO1996019753A1 publication Critical patent/WO1996019753A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Definitions

  • This invention relates to photolithographic processes and more particularly to ion-assisted etch processes used in photolithography for patterning semiconductor circuits.
  • Photolithography which uses ultraviolet light to pattern photosensitive coatings called photoresists (PR) on semiconductor wafer surfaces, is now being pressed to resolve features close to and even smaller than the wavelength of the ultraviolet light.
  • Current photolithography production equipment called i-line steppers, use a UV source having a wavelength of 0.365 microns.
  • the critical dimension (CD) on the latest production of integrated circuits is 0.350 microns. Accordingly, the i-line stepper equipment is at the limit of its capability. Because of the vast investment in this technology and in this equipment, every possible effort is being expended to extend the life of i-line photolithography.
  • i-line BARL has been of great value in reducing reflections, in those instances where the surface is substantially non-planar as illustrated in FIG. 1, when the i-line BARL layer is spun onto the wafer, it flows into and fills the low areas and remains thicker in those lower regions. After forming the PR pattern in subsequent processing steps, it is necessary to expose regions of the underlying surface of the substrate. To accomplish this requires removal of the i-line BARL layer in the regions not protected by PR. When the i-line BARL layer overlying the substrate regions to be exposed is removed by the standard prior art plasma etch formulation, severe etching occurs of the patterned photoresist, as illustrated at element 4' in F1G.2, an area which is not supposed to be removed during etching.
  • the change in CD's is made even greater by the need to etch through the thicker i-line BARL layer overlying the low lying areas of the topology.
  • the effect of this prior art etching of the PR is that the CD's of the PR pattern are altered. Accordingly, there is a need to provide a photolithography process which maintains resist profiles during plasma removal of spin-on organic i-line BARL material.
  • improved selective ion etch can be achieved using reactive nitrogen mixed with one or more temperature enhancing inert gases for PR and i-line BARL layers.
  • FIG.l illustrates the cross section of a silicon wafer with layers during manufacture of an integrated circuit.
  • FIG. 2 is an illustration of the cross section of a silicon wafer surface after standard PR and i-line BARL etch as in Prior Art.
  • FIG. 3 is illustrative of the cross section of a silicon wafer surface after using the process of this invention.
  • the i-line BARL layer 5 underlies the photoresist layer 4 and that the i-line BARL layer fills in the lower regions in the surface topology such as region 5 when the i-line BARL layer is spun on.
  • the thickness of the i-line BARL layer is exaggerated in FIG. 1 for illustrative purposes. Even at the thickest, the i-line BARL layer is less than half the PR layer thickness.
  • FIG. 1 represents the cross section after the photoresist has been patterned by exposure to UV and after the pattern development of the photoresist layer has been completed but before the exposed i-line
  • BARL layer regions (3 and 5) underlying the PR layer has been removed to expose selected underlying substrate regions. Because of the non-planar topology of the underlying surfaces, the i-line BARL layer will exhibit substantial local thickness variation. As seen in FIG. 2, when the standard PR etch process using oxygen plasma usually with freon (CHF 3 ) and argon (Ar) additives is continued until the underlying poly layer 6 is completely exposed, significant removal of the masking PR 4 and i-line BARL 3 are also removed resulting in undesirable change in the critical dimension established after PR development.
  • CHF 3 freon
  • Ar argon
  • i-line BARL layer might be made to become more polarized than the PR because of the higher concentration of oxygen atoms in the i-line BARL material. Then, we reasoned that we would provide a ion-assisted etch process which would react faster with the more polarized material because its bonds would then be more vulnerable. Accordingly, we sought a means of selectively polarizing the i-line BARL material.
  • a plasma using pure nitrogen provides an etch selectivity i-line BARL PR of 1.6 employing an excitation of 13.56 MHZ radio frequency at greater than 50 watts and a sheath self bias of 100-150 volts.
  • the chamber pressure was 15-50mTorr and the nitrogen flow rate was 20-50 SCCM.
  • the nitrogen plasma provides both chemi-absorption and topical heating to volatilize the reaction products.
  • the etch rate selectivity can be further improved by adding to the N 2 plasma an inert gas or mixture of gases.
  • the PR can heat up and melt unless the plasma is cooled by some means such as by duty cycle reductions by switching the plasma on and off, controlling the bias potential and/or adding other lighter inert additive gases.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Cette invention concerne un procédé photolithographique de dessin de masque pour support. Ce procédé permet de réduire les modifications des dimensions critiques se produisant, dans l'état actuel de la technique, lors de la gravure, sur un support non plan, de photorésine organique et de la couche de fond antireflet organique sous-jacente employée jusqu'à nos jours (ou i-line). En s'appuyant sur la différence minime qui existe entre la totalité du carbone et de l'oxygène contenue dans la photorésine organique et celle contenue dans la couche de fond antireflet organique, on peut obtenir un écart de polarisation en utilisant du plasma N2 pur pour la gravure ionique sous certaines conditions choisies. On obtient également une sélectivité entre la vitesse de gravure de la photorésine organique et la vitesse de gravure de la couche de fond antireflet organique.
PCT/US1995/014302 1994-12-19 1995-11-03 Procede de gravure de couche de fond antireflet par i-line selectif WO1996019753A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US35923294A 1994-12-19 1994-12-19
US08/359,232 1994-12-19

Publications (1)

Publication Number Publication Date
WO1996019753A1 true WO1996019753A1 (fr) 1996-06-27

Family

ID=23412914

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/014302 WO1996019753A1 (fr) 1994-12-19 1995-11-03 Procede de gravure de couche de fond antireflet par i-line selectif

Country Status (2)

Country Link
TW (1) TW275705B (fr)
WO (1) WO1996019753A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0859400A2 (fr) * 1996-12-23 1998-08-19 Texas Instruments Incorporated Améliorations relatives aux circuits intégrés

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123813A2 (fr) * 1983-03-08 1984-11-07 Kabushiki Kaisha Toshiba Procédé de gravure à sec pour couches comportant des matériaux organiques
JPS6452142A (en) * 1987-08-24 1989-02-28 Nippon Telegraph & Telephone Pattern forming process and silylating apparatus
EP0573212A2 (fr) * 1992-06-03 1993-12-08 AT&T Corp. Procédé d'attaque pour revêtement anti-réfléchissant
WO1994012912A1 (fr) * 1992-11-25 1994-06-09 Hoechst Celanese Corporation Reduction d'ions metal dans des revetements anti-reflecteurs de fond pour des photoreserves

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123813A2 (fr) * 1983-03-08 1984-11-07 Kabushiki Kaisha Toshiba Procédé de gravure à sec pour couches comportant des matériaux organiques
JPS6452142A (en) * 1987-08-24 1989-02-28 Nippon Telegraph & Telephone Pattern forming process and silylating apparatus
EP0573212A2 (fr) * 1992-06-03 1993-12-08 AT&T Corp. Procédé d'attaque pour revêtement anti-réfléchissant
WO1994012912A1 (fr) * 1992-11-25 1994-06-09 Hoechst Celanese Corporation Reduction d'ions metal dans des revetements anti-reflecteurs de fond pour des photoreserves

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 253 (P - 883) 13 June 1989 (1989-06-13) *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0859400A2 (fr) * 1996-12-23 1998-08-19 Texas Instruments Incorporated Améliorations relatives aux circuits intégrés
EP0859400A3 (fr) * 1996-12-23 1998-09-02 Texas Instruments Incorporated Améliorations relatives aux circuits intégrés

Also Published As

Publication number Publication date
TW275705B (en) 1996-05-11

Similar Documents

Publication Publication Date Title
US5968844A (en) Method for etching nitride features in integrated circuit construction
US5632910A (en) Multilayer resist pattern forming method
US8093155B2 (en) Method of controlling striations and CD loss in contact oxide etch
US6716570B2 (en) Low temperature resist trimming process
US5910453A (en) Deep UV anti-reflection coating etch
US7531102B2 (en) Simultaneous selective polymer deposition and etch pitch doubling for sub 50nm line/space patterning
US5807790A (en) Selective i-line BARL etch process
US6039888A (en) Method of etching an organic anti-reflective coating
KR20080046608A (ko) 다중-레이어 레지스트 플라즈마 에치 방법
US5342481A (en) Dry etching method
KR100743873B1 (ko) 플라즈마 처리 챔버 내에서의 에칭을 개선하기 위한 기술
KR100595090B1 (ko) 포토레지스트 마스크를 사용한 개선된 엣칭방법
US6620575B2 (en) Construction of built-up structures on the surface of patterned masking used for polysilicon etch
KR101810970B1 (ko) 에칭 방법 및 에칭 처리 장치
JPH1098029A (ja) 基板から有機反射防止膜をエッチングする処理法
KR19990050210A (ko) 산화막 식각 방법
JPH10242117A (ja) 半導体装置の製造方法
KR100239719B1 (ko) 반도체 소자의 제조를 위한 유기막의 식각 방법
WO1996019753A1 (fr) Procede de gravure de couche de fond antireflet par i-line selectif
JP3445584B2 (ja) 反射防止膜のエッチング方法
US6455232B1 (en) Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger
US6307174B1 (en) Method for high-density plasma etching
KR19980028825A (ko) 감광막 식각방법
US20040253823A1 (en) Dielectric plasma etch with deep uv resist and power modulation
JP3450253B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): JP KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH DE DK ES FR GB GR IE IT LU MC NL PT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase