WO1996010282A1 - Optical fibre with quantum dots - Google Patents
Optical fibre with quantum dots Download PDFInfo
- Publication number
- WO1996010282A1 WO1996010282A1 PCT/GB1995/002322 GB9502322W WO9610282A1 WO 1996010282 A1 WO1996010282 A1 WO 1996010282A1 GB 9502322 W GB9502322 W GB 9502322W WO 9610282 A1 WO9610282 A1 WO 9610282A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical fibre
- quantum dots
- fibre according
- colloid
- optical
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 55
- 239000013307 optical fiber Substances 0.000 title claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 238000005253 cladding Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 11
- 239000000835 fiber Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 26
- 239000000084 colloidal system Substances 0.000 claims description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 15
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000001556 precipitation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229940117389 dichlorobenzene Drugs 0.000 claims description 2
- QQBPIHBUCMDKFG-UHFFFAOYSA-N phenazopyridine hydrochloride Chemical compound Cl.NC1=NC(N)=CC=C1N=NC1=CC=CC=C1 QQBPIHBUCMDKFG-UHFFFAOYSA-N 0.000 claims description 2
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 2
- 239000012266 salt solution Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 5
- 229910052691 Erbium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 235000013601 eggs Nutrition 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 235000019830 sodium polyphosphate Nutrition 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229920000388 Polyphosphate Polymers 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000013605 boiled eggs Nutrition 0.000 description 1
- 229950005499 carbon tetrachloride Drugs 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead(II) nitrate Inorganic materials [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000001205 polyphosphate Substances 0.000 description 1
- 235000011176 polyphosphates Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 description 1
- 229910000059 tellane Inorganic materials 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/032—Optical fibres with cladding with or without a coating with non solid core or cladding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C13/00—Fibre or filament compositions
- C03C13/04—Fibre optics, e.g. core and clad fibre compositions
- C03C13/045—Silica-containing oxide glass compositions
- C03C13/046—Multicomponent glass compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/0229—Optical fibres with cladding with or without a coating characterised by nanostructures, i.e. structures of size less than 100 nm, e.g. quantum dots
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/365—Non-linear optics in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/02295—Microstructured optical fibre
- G02B6/02314—Plurality of longitudinal structures extending along optical fibre axis, e.g. holes
- G02B6/02385—Comprising liquid, e.g. fluid filled holes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01791—Quantum boxes or quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
- Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/888—Shaping or removal of materials, e.g. etching
Definitions
- This invention relates to an optical fibre and has particular bur not exclusive application to use as an optical amplifier
- erbium doped fibres can be used as optical amplifiers.
- a long length of fibre is required in order to achieve a significant level of amplification, e.g. 10m.
- erbium is a toxic substance so manufacture of the doped fibre is complex and requires stri pollution control measures.
- a laser making use of quantum dots is described in US Patent No. 5 260 957.
- a host material such as PMMA contains quantum dots.
- the laser may be in the form of a channel waveguide device, the host material being arranged in a cavity formed in a channel machined in a substrate, the substrate having a lower refractive index than the host.
- the laser is pumped by an external light source in order to provide a laser output.
- the use of polymeric material is said to be advantageous.
- An optical fibre with non-linear optical characteristics is known from JP-A-4- 195028, in which the interior of a tubular glass sheath is coated with materials that, on subsequent heating, form particulate material disposed in a glass core of the fibre.
- the present invention is concerned with the production of an optical fibre with improved amplification or wavelength conversion characteristics.
- an optical fibre with a colloid of quantum dots therein.
- the fibre may include a core and a cladding, with the colloid of quantum dots forming at least part of the core.
- the colloid of quantum dots may include a non-vitreous support medium in which the dots are dispersed, e.g dichlorobenzene, toluene, benzene, nitrobenzene, pyridene or carbontetrachloride.
- the dot density in the medium and the diameter distribution for the dots are selected depending on the application of the fibre.
- the materials from which the dots are made are selected depending on the intended use.
- the quantum dots may comprise lead sulphide (PbS) with a diameter range of 5-10 nm.
- the fibre according to the invention has particular application as an amplifier, when pumped by an external source, so that input light, e.g. light pulses, can be amplified.
- the arrangement may be similar to that used for a conventional erbium doped fibre, but with the advantage that the amplification is more efficient and so a much shorter length of fibre can be used.
- the fibre however has other uses, e.g. as a wavelength converter.
- Figure 1 is a schematic perspective view of an optical fibre in accordance with the invention
- Figure 2 is a transverse cross section of the fibre shown in Figure 1
- Figure 3 shows a method of making the fibre shown in Figure 1
- Figure 4 illustrates the fibre, used in an optical amplifier.
- this shows an example of optical fibre in accordance with the invention which consists of a tubular glass sheath 1 that has an elongated central opening 2 running the length thereof.
- Such a hollow fibre can be made and filled with a liquid in the manner demonstrated by Kashyap and Finlayson in Optics Letters 17 pp 405-407 (1992).
- the central opening 2 is filled with a colloid of quantum dots, namely a support medium 3 that contains quantum dots 4. This can be seen clearly from Figure 2.
- the colloid of quantum dots (3,4) forms the core of the fibre and the glass sheath 1 forms its cladding.
- the refra ⁇ ive index of the support medium 3 is sele ⁇ ed to be somewhat greater than the refra ⁇ ive index of the glass sheath 1 so that the refra ⁇ ive index difference ⁇ n will cause light incident at one end of the fibre to be propagated along the length of the core, in a manner well known per se for optical fibres.
- light transmitted along the fibre is incident on the quantum dots 4 held in the support medium 3.
- the quantum dots 4 are sele ⁇ ed to produce photoluminescence.
- An appropriate sele ⁇ ion is to use a material that luminesces efficiently in the bulk e.g. a dire ⁇ gap semicondu ⁇ or or insulator such as a J ⁇ -V, II- VI or I- VII material or some alloy of these.
- a material that luminesces efficiently in the bulk e.g. a dire ⁇ gap semicondu ⁇ or or insulator such as a J ⁇ -V, II- VI or I- VII material or some alloy of these.
- other material should not be excluded, because sele ⁇ ion rules that prevent a material luminescing efficiently in the bulk are relaxed to some extent in quantum dots.
- the surface treatment of the quantum dots may inyoduce new ele ⁇ ronic transitions that may lead to efficient luminescence that is not related to the bulk ele ⁇ ronic stru ⁇ ure.
- Suitable materials for the support medium are liquids with a refra ⁇ ive index larger than that for the glass of which the fibre is composed.
- examples of such liquids are toluene, benzene and nitrobenzene.
- Either AsH 3 or As(CH 3 ) 3 is used for the preparation of arsenides.
- the oxides are prepared, for example by the hydrolysis of the alkoxy compounds.
- Stable colloidal solutions are obtained by the addition of stabilisers (tensides, organic or inorganic polymers).
- a much used method for the preparation of quantum dots is the precipitation in the presence of sodium polyphosphate as a stabiliser.
- the polyphosphate is well suited for the stabilisation of quantum dots, because the chain is strongly bound by metal ions to the particle surface. It causes ele ⁇ rostatic repulsion between particles because of its charge and also keeps them apart sterically because of its chain length.
- By means of the methods described by Weller it is possible to grow a colloidal solution containing for example CdSe particles of average diameter 1.3-2nm.
- quantum dot diameters may be used. For example, quantum dots within a diameter range of l-50nm may produce useful results. Dots with a smaller diameter will produce more pronounced fluorescence so a range of 1- 20 nm may be preferred.
- the colloidal solution may be caused to enter the tubular glass sheath 1 by capillary a ⁇ ion.
- One end of the sheath 1 is inserted into a reservoir 5 containing the colloidal material 3, 4 which then fills the central opening 2 of the sheath by capillary a ⁇ ion.
- negative pressure can be applied to the other end of the sheath to aid the filling process.
- Positive pressure may be applied to the surface of the colloidal material in the reservoir 5.
- Figure 4 shows an example of the fibre according to the invention in an optical amplifier.
- One end of the fibre 1 is spliced at region 6 to a conventional silica optical fibre 7 which itself is fused to a further fibre 8 in a coupling region 9.
- Optical signals from a source 10 are dire ⁇ ed into the fibre
- the fibre is pumped by, for example, a semicondu ⁇ or laser
- the ele ⁇ ron in order to promote an ele ⁇ ron from one of the low energy states (normally occupied in the absence of the pump or signal beams) in the quantum dot into one of the high energy states (normally unoccupied in the absence of the pump or signal beams).
- the ele ⁇ ron can then amplify a light signal from the source 10 by making a transition back from one of the high energy states to one of the low energy states and thereby emitting a photon, provided the energy lost by the ele ⁇ ron in making the transition matches the energy of the photons in the signal beam.
- the invention has the advantage that the amplification efficiency of the fibre, as shown in Figure 4, is much greater than that of a conventional erbium doped fibre so that the length of fibre needed to achieve the appropriate amplification level is significantly reduced. Also, the power levels from the laser 11 may be reduced significantly. Furthermore, the materials used are less toxic which greatly simplifies manufa ⁇ ure.
- a hollow preform of sodalime glass was drawn into an elongate sheath with an inner diameter of 5 ⁇ m for its central opening and an outer diameter of 125 ⁇ m, and cut to a length of 15cm.
- the sheath had a refra ⁇ ive index of 1.45.
- the central opening was filled with a colloidal solution of quantum dots of PbS material with a mean diameter of 5-10nm in a support medium of toluene. The filling was achieved by capillary a ⁇ ion and negative pressure, as previously described.
- the ends of the central opening were left open, as the colloidal solution is held in place by capillary a ⁇ ion. However, the ends can be filled with an optically transparent plugging material, if required.
- the mean concentration of the quantum dots in the support medium was approximately 1% by volume.
- the colloidal solution containing the quantum dots exhibited a refra ⁇ ive index of 1.50.
- the quantum dots exhibited band gaps over a range of 0.8 - 1.0 ev as a fun ⁇ ion of diameter, which permitted broadband lumiescence over a range 1.3 - 1.5 ⁇ m for light fed into the fibre, when pumped at a wavelength of 1.06 ⁇ m so as to provide broadband amplification in the two wavelength ranges often used for optical telecommunications.
- the resulting fibre tends to support a single transmission mode, but if the diameter of the central opening is increased, multi-mode operation may be achieved.
- the PbS quantum dots were formed by precipitation from an aqueous solution of a soluble lead salt e.g. Pb(N0 3 ) 2 or Pb(OCOCH 3 ) 2 , using H 2 S as the precipitating agent, in the presence of sodium polyphosphate as a stabiliser.
- the resulting quantum dots were then dried so as to form a powder which was then dispersed in toluene in order to produce the colloidal solution to be used as the filler material for the glass sheath.
- the cladding material may not have its opening disposed centrally.
- the cladding may surround a solid core having a refra ⁇ ive index greater than that of the cladding, the core having an opening therein that receives the colloidal solution of quantum dots. This would reduce the restri ⁇ ion on the refra ⁇ ive index of the colloidal solution of quantum dots, and it may be possible to use a colloidal solution of quantum dots with a refra ⁇ ive index the same as or possibly a little lower than the refra ⁇ ive index of the cladding, with the refra ⁇ ive index of the core being higher than that of the cladding.
- the cladding may include more than one opening that receives the colloidal solution of quantum dots, e.g. in the manner of a multi-core optical fibre.
- colloid described in the examples comprises quantum dots dispersed in a liquid support medium
- other states of support medium e.g. solids and gases.
- the fibre may be formed from a non-silica glass such as a floride glass, or even a non-vitreous material such as a plastics material e.g. PMMA.
- the optical amplifier described herein can be used in a resonant cavity to provide a laser.
- the fibre as shown in Figure 4 can be provided with semi-refra ⁇ ive surfaces at the splice 6 and at the free end, to provide a Fabry-Perot resonant cavity.
- a pigtail fibre with refra ⁇ ive index grating may be attached to the free end of the fibre 1 to tune the cavity.
- the colloid of quantum dots may be used in a waveguide structure, which may itself be included in a resonant cavity e.g. to provide a laser, in which the waveguide is not a fibre defined by a cladding, but instead a channel formed in a substrate or some other non-fibre confirming structure.
- optical includes both visible and non-visible optical radiation, such as ultra violet and infrared.
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Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/809,179 US5881200A (en) | 1994-09-29 | 1995-09-29 | Optical fibre with quantum dots |
KR1019970701908A KR970706628A (en) | 1994-09-29 | 1995-09-29 | Optical fiber with quantum dots (OPTICAL FIBER WITH QUANTUM DOTS) |
JP8511524A JPH10506502A (en) | 1994-09-29 | 1995-09-29 | Optical fiber with quantum dots |
EP95932841A EP0783784B1 (en) | 1994-09-29 | 1995-09-29 | Optical fibre with quantum dots |
CA002199506A CA2199506C (en) | 1994-09-29 | 1995-09-29 | Optical fibre with quantum dots |
DE69519384T DE69519384T2 (en) | 1994-09-29 | 1995-09-29 | Optical fiber with quantum dots |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94307113.4 | 1994-09-29 | ||
EP94307113 | 1994-09-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996010282A1 true WO1996010282A1 (en) | 1996-04-04 |
Family
ID=8217865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1995/002322 WO1996010282A1 (en) | 1994-09-29 | 1995-09-29 | Optical fibre with quantum dots |
Country Status (8)
Country | Link |
---|---|
US (1) | US5881200A (en) |
EP (1) | EP0783784B1 (en) |
JP (1) | JPH10506502A (en) |
KR (1) | KR970706628A (en) |
CA (1) | CA2199506C (en) |
DE (1) | DE69519384T2 (en) |
ES (1) | ES2153495T3 (en) |
WO (1) | WO1996010282A1 (en) |
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Also Published As
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DE69519384D1 (en) | 2000-12-14 |
DE69519384T2 (en) | 2001-05-23 |
JPH10506502A (en) | 1998-06-23 |
ES2153495T3 (en) | 2001-03-01 |
US5881200A (en) | 1999-03-09 |
EP0783784B1 (en) | 2000-11-08 |
CA2199506A1 (en) | 1996-04-04 |
CA2199506C (en) | 2001-07-31 |
KR970706628A (en) | 1997-11-03 |
EP0783784A1 (en) | 1997-07-16 |
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