CN112159099A - Method for inducing precipitation of quantum dots in glass by picosecond laser - Google Patents
Method for inducing precipitation of quantum dots in glass by picosecond laser Download PDFInfo
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- CN112159099A CN112159099A CN202011010180.3A CN202011010180A CN112159099A CN 112159099 A CN112159099 A CN 112159099A CN 202011010180 A CN202011010180 A CN 202011010180A CN 112159099 A CN112159099 A CN 112159099A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
Abstract
A method for inducing and separating out quantum dots in glass by picosecond laser utilizes ultrashort pulse laser beams with pulse width of picosecond magnitude and energy density larger than or equal to a threshold value generated by transparent medium quantum dots to induce and generate the quantum dots in a transparent material through obvious thermal effect of the ultrashort pulse laser beams.
Description
Technical Field
The invention relates to glass, in particular to a method for inducing quantum dots in glass by picosecond laser.
Background
Due to the quantum size effect, the dielectric confinement effect, the quantum tunneling effect, the surface effect, the coulomb blocking effect and other effects, the quantum dots show many unique physicochemical properties different from macroscopic materials, such as the emission spectrum which can be controlled by changing the size of the quantum dots, the wide excitation spectrum and the narrow emission spectrum, the large Stokes shift, the good biocompatibility and the long fluorescence lifetime. The characteristics enable the quantum dots to have extremely wide application prospects in the aspects of quantum dot lasers, biological imaging, catalysis, solar cells, display devices, single-electron devices, information storage, various photoelectric devices and the like. The preparation of quantum dots in glass materials and the research of the formation mechanism and behavior of quantum dots are a great research frontier in the field of optics and materials science at present.
With the development of large-scale integrated microelectronics and photoelectronic technologies, it is required to form a controllable three-dimensional microstructure in an optical material to realize device multi-functionalization and integration, which puts higher requirements on the technology for preparing quantum dots in glass. At present, only by the laser induction method, the three-dimensional controllable microstructure containing the quantum dots can be prepared in the glass, but so far, only femtosecond laser induces the quantum dots to form in the glass, but the method has the defects of low processing efficiency, expensive processing equipment and the like. Quantum dot production has not been induced in glass by picosecond lasers.
Disclosure of Invention
The invention aims to provide a method for inducing and precipitating quantum dots in glass by picosecond laser, which is used for obtaining a three-dimensional microstructure containing the quantum dots by inducing the glass through picosecond laser processing.
The technical solution of the invention is as follows:
a method for inducing and separating out quantum dots in glass by picosecond laser is characterized by comprising the following steps:
firstly, preparing mother glass capable of precipitating quantum dots by laser induction;
cutting mother glass into blocks, polishing six surfaces of the blocks, and placing the blocks on a three-dimensional processing moving platform;
thirdly, picosecond laser is used as a light source, the laser beam is focused inside the polished mother glass through focusing, and the power density of the focal spot is more than 106W/cm2;
And fourthly, controlling the movement of the three-dimensional translation table by the computer, thereby adjusting the focusing position of the laser in the mother glass and inducing and separating out the three-dimensional microstructure containing the corresponding quantum dots in the glass.
The mother glass for precipitating the quantum dots through laser induction comprises CdSe quantum dot mother glass, PbSe quantum dot mother glass, CdTe quantum dot mother glass and PbTe quantum dot mother glass.
The preparation method of the CdTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the glass melt by using another steel plate, and cooling the glass melt to room temperature to obtain the transparent CdTe quantum dot mother glass.
Selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the molten glass on a stainless steel plate, flattening the molten glass by using another steel plate, and cooling the molten glass to room temperature to obtain the transparent CdSe quantum dot mother glass.
The preparation method of the PbSe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbSe quantum dot mother glass.
The preparation method of the PbSe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
the preparation method of the CdSe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
the preparation method of the CdTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the glass melt by using another steel plate, and cooling the glass melt to room temperature to obtain the transparent CdTe quantum dot mother glass.
The preparation method of the PbTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbTe quantum dot mother glass.
The preparation method of the PbTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbTe quantum dot mother glass.
The picosecond laser output laser pulse width is 10ps, the wavelength is 532nm, and the repetition frequency is 100 kHZ.
The principle of the glass containing the quantum dots is that the glass consists of sodium silicon carbon, and the power density of 250kHz picosecond laser is very high after being focused by a picosecond laser induction method, the temperature of a focused area is as high as thousands of K, the glass has very strong heat effect, the glass is melted in a small range, and anions and metal cations are combined to form a small core under the action of heat and grow continuously. Meanwhile, due to the reaction with space selectivity induced by the nonlinear interaction of the picosecond pulse laser and the glass, a controllable three-dimensional microstructure can be formed in the transparent glass.
Compared with the high repetition frequency femtosecond laser induction method at the present stage, the method for inducing quantum dots in glass by using picosecond laser has the following advantages:
1. the picosecond laser is far cheaper than the femtosecond laser and has good stability.
2. Picosecond lasers are much faster than femtosecond lasers in terms of processing efficiency due to the obvious thermal effect.
3. The influence of picosecond laser on the aspects of absorption, refraction and the like of glass in a processing area after quantum dots are induced in the glass is far less than that of femtosecond laser.
Drawings
FIG. 1 shows CdTe-containing quantum dot glass which is prepared by performing induction precipitation on 50SiO2-33Na2CO3-10ZnO-5Al2O3-1CdO-1ZnTe as a mother glass component after picosecond processing.
Detailed Description
The invention is further illustrated by the following examples.
Example 1 induced precipitation of CdTe-containing quantum dots in glass
The components of the mother glass containing CdTe quantum dots are induced and separated out from the glass, and the mol percentage of the components is 50SiO2-33Na2CO3-10ZnO-5Al2O3-1CdO-1ZnTe, weighing 50g of raw materials according to the component proportion, grinding the raw materials in an agate crucible to be half smallThen placing the mixture in a corundum crucible to melt for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a grating containing CdTe quantum dots can be obtained inside the glass by focusing 532mW laser light with a 5-fold (NA 0.80) objective lens inside the glass and irradiating the focused laser light into the polished glass to write the grating. As shown in fig. 1.
Example 2 induced precipitation of PbSe-containing quantum dots in glass
The components and the mol percentage of 50SiO of the mother glass containing PbSe quantum dots are induced and precipitated in the glass2-33Na2CO3-10ZnO-5Al2O3Weighing 50g of raw materials according to the component proportion, grinding the raw materials in an agate crucible for half an hour, and then placing the raw materials in a corundum crucible to melt for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a532 mW laser was focused by a 5-fold (NA 0.80) objective lens in the glass and irradiated into the polished glass to write a grating, thereby obtaining a grating containing CdSe quantum dots in the glass.
Example 3 Induction of precipitation of PbSe-containing quantum dots in glass
The components and the mol percentage of 50SiO of the mother glass containing PbSe quantum dots are induced and precipitated in the glass2-33Na2CO3-10ZnO-5Al2O3-1PbSe, weighing 50g of raw materials according to the component proportion, and grinding for half an hour in an agate crucibleThen placing the mixture in a corundum crucible to melt for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a532 mW laser was focused by a 5-fold (NA 0.80) objective lens in the glass and irradiated into the polished glass to write a grating, thereby obtaining a grating containing CdSe quantum dots in the glass.
Example 4 induced precipitation of CdSe-containing quantum dots in glass
The components of the master glass containing CdSe quantum dots are induced and separated out from the glass, and the molar percentage of the master glass is 50SiO2-33Na2CO3-10ZnO-5Al2O3Weighing 50g of raw materials of-1 CdO-1ZnSe according to the component proportion, grinding the raw materials in an agate crucible for half an hour, and then placing the raw materials in a corundum crucible to melt for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a532 mW laser was focused by a 5-fold (NA 0.80) objective lens in the glass and irradiated into the polished glass to write a grating, thereby obtaining a grating containing CdSe quantum dots in the glass.
Example 5 induced precipitation of CdTe-containing quantum dots in glass
The components of the mother glass containing CdTe quantum dots are induced and separated out from the glass, and the mol percentage of the components is 50SiO2-33Na2CO3-10ZnO-5Al2O3Weighing 50g of raw materials of-1 CdTe according to the component proportion, grinding the raw materials in an agate crucible for half an hour, and then placing the ground raw materials in corundum crucibleMelting the mixture in a crucible for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a grating containing CdTe quantum dots can be obtained inside the glass by focusing 532mW laser light with a 5-fold (NA 0.80) objective lens inside the glass and irradiating the focused laser light into the polished glass to write the grating.
Example 6 induced precipitation of PbTe containing quantum dots in glass
The components and the mol percentage of 50SiO of the mother glass containing PbTe quantum dots are induced and precipitated in the glass2-33Na2CO3-10ZnO-5Al2O3Weighing 50g of raw materials of-1 PbO-1ZnTe according to the component proportion, grinding the raw materials in an agate crucible for half an hour, and then placing the raw materials in a corundum crucible to melt for half an hour at 1350 ℃ to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a 532mW laser beam was focused by a 5-fold (NA 0.80) objective lens in the glass and irradiated into the polished glass to write a grating, thereby obtaining a grating containing PbTe quantum dots in the glass.
Example 7 induced precipitation of PbTe containing quantum dots in glass
The components and the mol percentage of 50SiO of the mother glass containing PbTe quantum dots are induced and precipitated in the glass2-33Na2CO3-10ZnO-5Al2O3-1PbTe, weighing 50g of raw materials according to the component proportion, grinding the raw materials in an agate crucible for half an hour, and then placing the raw materials in a corundum crucible at 1350 DEG CMelting for half an hour to form molten glass; and quickly pouring the glass melt on a stainless steel plate, lightly pressing the stainless steel plate by using another steel plate to obtain colorless and transparent mother glass, and then cutting and polishing the mother glass. And placing the laser source on a three-dimensional moving platform, and selecting the laser source with the laser pulse width of 10ps, the wavelength of 532nm and the repetition frequency of 250 kHz. The three-dimensional moving platform and the laser source perform laser irradiation on the mother glass under the synchronous control of computer software, and write gratings, namely: a 532mW laser beam was focused by a 5-fold (NA 0.80) objective lens in the glass and irradiated into the polished glass to write a grating, thereby obtaining a grating containing PbTe quantum dots in the glass.
Claims (10)
1. A method for inducing quantum dots in glass by picosecond laser is characterized by comprising the following steps:
firstly, preparing mother glass capable of precipitating quantum dots by laser induction;
cutting mother glass into blocks, polishing six surfaces of the blocks, and placing the blocks on a three-dimensional processing moving platform;
thirdly, picosecond laser is used as a light source, the laser beam is focused inside the polished mother glass through focusing, and the power density of the focal spot is more than 106W/cm2;
And fourthly, controlling the movement of the three-dimensional translation table by the computer, thereby adjusting the focusing position of the laser in the mother glass and inducing and separating out the three-dimensional microstructure containing the corresponding quantum dots in the glass.
2. The method for quantum dot precipitation in glass induced by picosecond laser according to claim 1, wherein the parent glass for quantum dot precipitation induced by laser comprises CdSe quantum dot parent glass, PbSe quantum dot parent glass, CdTe quantum dot parent glass and PbTe quantum dot parent glass.
3. The method for picosecond laser to induce precipitation of quantum dots in glass according to claim 2, wherein the preparation method of the CdTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the glass melt by using another steel plate, and cooling the glass melt to room temperature to obtain the transparent CdTe quantum dot mother glass.
Selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the molten glass on a stainless steel plate, flattening the molten glass by using another steel plate, and cooling the molten glass to room temperature to obtain the transparent CdSe quantum dot mother glass.
4. The method for inducing quantum dot precipitation in glass by picosecond laser according to claim 2, wherein the preparation method of the PbSe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbSe quantum dot mother glass.
7. the method for picosecond laser to induce precipitation of quantum dots in glass according to claim 2, wherein the preparation method of the CdTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the glass melt by using another steel plate, and cooling the glass melt to room temperature to obtain the transparent CdTe quantum dot mother glass.
8. The method for inducing quantum dots to be precipitated in glass by picosecond laser according to claim 2, wherein the preparation method of the PbTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbTe quantum dot mother glass.
9. The method for inducing quantum dots to be precipitated in glass by picosecond laser according to claim 2, wherein the preparation method of the PbTe quantum dot mother glass comprises the following steps:
selecting the following glass components and mol percentage content thereof:
selecting the components and the mol percentage of the glass, weighing a certain total amount of raw materials according to the selected mixture ratio, grinding the raw materials in an agate mortar for 10-20 minutes, and uniformly mixing the raw materials;
secondly, putting the ground raw materials into a corundum crucible, melting at the temperature of 1200 plus materials and 1400 ℃, and preserving the heat for 20-40 minutes to form glass melt;
thirdly, pouring the glass melt on a stainless steel plate, flattening the stainless steel plate lightly, and cooling to room temperature to obtain the transparent PbTe quantum dot mother glass.
10. The method for inducing quantum dots in glass by picosecond laser according to claim 1, wherein the picosecond laser output laser has a pulse width of 10ps, a wavelength of 532nm and a repetition frequency of 100 kHZ.
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WO1996010282A1 (en) * | 1994-09-29 | 1996-04-04 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
CN102153283A (en) * | 2010-11-16 | 2011-08-17 | 浙江工业大学 | Method for preparing PbSe quantum dot doped fiber material |
CN104529152A (en) * | 2014-12-17 | 2015-04-22 | 武汉理工大学 | CdSe quantum dot doped glass and preparation method thereof |
CN105293906A (en) * | 2015-12-08 | 2016-02-03 | 武汉理工大学 | CdTe quantum-dot doped glass and preparation method thereof |
CN109180011A (en) * | 2018-08-09 | 2019-01-11 | 蚌埠淮畔精密机械有限公司 | A kind of PbTe/CdTe double quantum point is co-doped with borosilicate glass and its preparation process |
CN109455929A (en) * | 2018-11-23 | 2019-03-12 | 华南理工大学 | Glass develops the color technique immediately under a kind of pulsed laser action |
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2020
- 2020-09-23 CN CN202011010180.3A patent/CN112159099A/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996010282A1 (en) * | 1994-09-29 | 1996-04-04 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
CN102153283A (en) * | 2010-11-16 | 2011-08-17 | 浙江工业大学 | Method for preparing PbSe quantum dot doped fiber material |
CN104529152A (en) * | 2014-12-17 | 2015-04-22 | 武汉理工大学 | CdSe quantum dot doped glass and preparation method thereof |
CN105293906A (en) * | 2015-12-08 | 2016-02-03 | 武汉理工大学 | CdTe quantum-dot doped glass and preparation method thereof |
CN109180011A (en) * | 2018-08-09 | 2019-01-11 | 蚌埠淮畔精密机械有限公司 | A kind of PbTe/CdTe double quantum point is co-doped with borosilicate glass and its preparation process |
CN109455929A (en) * | 2018-11-23 | 2019-03-12 | 华南理工大学 | Glass develops the color technique immediately under a kind of pulsed laser action |
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