CN101206281A - Optical fiber doped with PbSe quantum spot and optical fiber amplifier thereof - Google Patents
Optical fiber doped with PbSe quantum spot and optical fiber amplifier thereof Download PDFInfo
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- CN101206281A CN101206281A CNA2007101645634A CN200710164563A CN101206281A CN 101206281 A CN101206281 A CN 101206281A CN A2007101645634 A CNA2007101645634 A CN A2007101645634A CN 200710164563 A CN200710164563 A CN 200710164563A CN 101206281 A CN101206281 A CN 101206281A
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Abstract
The invention relates to a doping PbSe quantum dot optical fiber, in particular to a multi-granularity doping PbSe quantum dot optical fiber and a optical fiber communication amplifier thereof, wherein, the optical fiber comprises a fiber core and a cladding; the fiber core adopts semiconductor nano crystal PbSe quantum dot as dopant; the total concentration of the PbSe quantum dot is between 1 x 10<19> and 1 x 10<23>m<-3>; the dopant contains two to seven sorts of quantum dots with the particle diameter gradient difference value ranging between 0.5nm and 1.2nm; the particle diameter of the quantum dots ranges from 3nm to 9nm; the optical fiber amplifier comprises a pumping light source, an input optical fiber coupler, a doping PbSe quantum dot optical fiber and an output optical fiber coupler; moreover, the quantum dot optical fiber amplifier has the outstanding advantages of high flat gain, broad bandwidth and low noise, etc.
Description
One. technical field
The present invention relates to a kind of optical fiber of the PbSe of doping quantum dot, particularly a kind of optical fiber and optical fiber communication amplifier thereof of many granularities doping PbSe quantum dot.
Two. technical background
In the communication of dense wave division multipurpose all optical network, fiber amplifier is a Primary Component.In multiple fiber amplifier, mix the fiber amplifier of natural rare earth element, especially Erbium-Doped Fiber Amplifier (EDFA) (erbium-doped fiber amplifier, EDFA), because it has characteristics such as broader bandwidth, gain is higher, noise is lower, has become main force's fiber amplifier.For bandwidth and the flat gain that increases EDFA, people have added other element (for example ytterbium, thulium etc.) in fibre core, many different structures such as binary channels, annular, two-way and multistage pumping have been designed, make the EDFA of band labyrinth reach quite high level (bandwidth～110nm, flat gain～15dB, noise spectrum on whole wavestrip be～4.5dB).In addition in recent years, the Raman fiber amplifier the wideest as bandwidth also had bigger development, even EDFA and Raman fiber amplifier are combined.Now, people have developed the about 260nm of bandwidth (1240～1500nm) Raman fiber amplifier.Indexs such as these bandwidth have been represented at present the best level of fiber amplifier in the world, have also reflected the limit technology ability of the fiber amplifier of mixing natural element substantially.
All the time, people want to have use up thousand and one way, attempt by the various structures of design (two-way, binary channels, multistage pumping), change doping composition (single mix, codope) and doping ratio or the like, the bandwidth and the flat gain that improve amplifier.But, because the wavelength of natural element radiation (absorptions) spectrum and wavestrip be intrinsic and can't change, therefore, although people's effort is to the utmost, but mix key indexs such as the bandwidth of natural element fiber amplifier and flat gain and as if reached the limit of its technology potentiality reality limit.
On the other hand, it should be noted that artificial nano crystalline material (quantum dot) development in recent years rapidly.Quantum dot is accurate zero-dimension nano material, and it is claimed again " artificial atom " by a spot of atomic building.All below tens nanometers, the energy of its electronics all is quantized on three dimensions to the size of three dimensions of quantum dot, so quantum effect is obvious especially.The density of states that quantum dot is low, the sharpening of energy level and three-dimensional restrained motion cause it to have the discontinuous electronic energy stage structure of similar atom, make its electric property and optical property generation marked change.Various quantization effects are all more remarkable such as quantum size effect, quantum Interference, quantum tunneling effect and coulomb blockade effect etc.This also makes semiconductor-quantum-point have very wide application prospect at aspects such as life science, medicine, magnetic medium, single-electron device, storer and various photoelectric devices.
For artificial nano crystal quantum dot, can what people at first expected be used for making quantum dot laser.The report that this respect has been arranged in the world.For example, U.S. Connell (Cornell) university and famous U.S. Corning company cooperate, and experimental results show that quantum dot at epitaxially grown III-V family element exists photon to swash and penetrates.Yet, since the scale ratio of the quantum dot of preparation itself big (〉=10nm), its constraint can be almost close with evenly heat kinetic energy, swashs and penetrate instability, very difficultly controls excitation wavelength by quantum confinement.When receiving the crystal yardstick hour, a little variation of quantum dot yardstick will influence the variation of radiation and line-width.This inhomogeneous broadening has restricted spectral transition intensity, causes quantum dot to swash the transformation of the behavior of penetrating, and this is the major obstacle that quantum dot laser runs at present.
Yet on the contrary, the inhomogeneous broadening that the quantum dot thermal motion causes brings benefit but for the optical pumping amplifier.For optical-fibre communications, wish to have wide, gain spectrum flattening, every passage to be independent saturated fiber amplifier, the broadening of quantum dot spectral line just in time can satisfy the requirement of optical-fibre communications amplifier.For in the infrared communication wavestrip, many alternative different types of quantum dots are arranged.For the III-V compounds of group, narrow-gap semiconductor crystal InAs, InSb and GaSb etc. are arranged.In addition, some nanometer semimetal mercuric sulphides (HgS, HgSe and HgTe) and Nanoalloy thereof also show the radiation transistion characteristic in infrared wavestrip.In the IV-VI compounds of group, nanocrystals such as PbS and PbSe are arranged.Recently, U.S. Evident Technologies company has developed quantum dots such as PbSe, CdTe, CdSe and CdS, and their absorption and radiation spectrum have covered the wavestrip of the broadness of 465～2340nm, do not accomplish in this former technology.Quantum dot preparation method commonly used at present is the molecular beam epitaxy self-organizing growth.In the self-organizing growth process, can control the growth yardstick of nanocrystal by the control growth conditions, make it to produce absorption peak, radiation peak and the different overall withs half high (FWHM) of different wave length position.By dissimilar doping or different scale size, also can wholely move absorption and radiation spectrum or the like.These advantageous characteristic are that natural element does not possess.
In many different types of semiconductor nanocrystals (for example PbSe, CdTe, CdSe and CdS etc.), the tool potentiality of PbSe nanocrystal.The PbSe quantum dot is a kind of semiconductor nanoparticle of glue, and diameter roughly is equivalent to the yardstick (covalent radius of Se atom is 0.116nm, and the atomic radius of Pb is 0.175nm) of 3000～30000 atoms between 4.5～9nm.(1200～2340nm) have strong radiation and absorption peak to the PbSe quantum dot, and its typical FWHM～200nm is bigger about 8～10 times than erbium ion at infrared band.For diameter is the PbSe quantum dot of 5.5nm, and its radiation peak and absorption peak lay respectively at 1630nm and 1550nm, just in time drops near the conventional optical-fibre communications centre wavelength 1550nm.Based on above factor, we choose the PbSe nanocrystal.
Three. summary of the invention
First purpose of the present invention is to provide a kind of optical fiber that can obviously improve many granularities doping PbSe quantum dot of fiber amplifier performance.
Goal of the invention of the present invention realizes by following means:
A kind of optical fiber of the PbSe quantum dot that mixes, described optical fiber comprises fibre core and covering, and described fibre core adopts semiconductor nanocrystal PbSe quantum dot as alloy, and described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3, described alloy is the quantum dots of 2～7 kinds of particle diameter gradient differences between 0.5～1.2nm, the particle diameter of described quantum dot is 3nm～9nm.It is the optical fiber of fibre core background that the present invention is fit to any material, is the more of fiber core background applications with silicon dioxide.The quantum dot of certain particle diameter of the present invention is meant that the particle diameter that the quantum dot more than 70% is wherein arranged is described grain diameter value, quantum dot as 5nm is meant that the particle diameter that the quantum dot more than 70% is arranged in the quantum dot is 5nm, and having 30% quantum point grain diameter is 5nm ± 10% * 5nm.Owing to technology, be difficult to make the quantum dot of 100% same particle diameter at present.
PbSe quantum dot of the present invention is preferably the identical and space of each granularity concentration and evenly mixes.
Alloy of the present invention is that 5～7 kinds of particle diameter gradient differences are 1nm PbSe quantum dot.
Second purpose of the present invention provides that a kind of wavestrip is wide, flat gain and the extremely low fiber amplifier of noise:
A kind of fiber amplifier of the PbSe quantum dot that mixes, described amplifier comprises pump light source, input optical fibre coupling mechanism, the optical fiber of doping PbSe quantum dot, output optical fibre coupling mechanism, the fibre core of the optical fiber of described doping PbSe quantum dot adopts the PbSe quantum dot as alloy, and described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3, described alloy is the quantum dots of 2～7 kinds of particle diameter gradient differences between 0.5～1.2nm, the particle diameter of described quantum dot is 3nm～9nm; Described fibre core preferably is background material with silicon dioxide.
The quantum dot concentration of further described each particle diameter of PbSe quantum dot is identical, and the space evenly mixes, and described PbSe quanta point optical fiber length is 0.1～2m.
Patching of further described amplifier and PbSe quanta point optical fiber is circumscribed.
The wavelength of described pump light source is one of 980 ± 5nm, 1480 ± 5nm or two kinds, and the power of described pump light source is 50mw～500mw.
Further described amplifier comprises pump light source, input optical fibre coupling mechanism, the optical fiber of doping PbSe quantum dot, output optical fibre coupling mechanism, and described pump light source wavelength is 980 ± 5nm or 1480 ± 5nm, and pump power is 50mw～500mw; The fibre core of the optical fiber of described PbSe quantum dot is background material with silicon dioxide, and described fibre core adopts the PbSe quantum dot as alloy, and described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3Described alloy is that 2～7 kinds of particle diameter gradient differences are the quantum dot of 1nm, the particle diameter of described quantum dot is 3nm～9nm, fiber lengths is 0.1～2m, the PbSe quantum dot concentration of each particle diameter is mutually identical, and evenly mix in the space, and patching of described amplifier and PbSe quanta point optical fiber is circumscribed.
Ultimate principle of the present invention: for the quantum dot of certain size, the FWHM of its radiation one absorption cross section with and the peak wavelength in cross section fixing and can't change.Therefore, expand quantum dot fiber amplifier (Quantum dot-doped fiber amplifier, QDFA) bandwidth, a kind of feasible method is to adopt mix more, promptly adopt the quantum dot-doped of different-diameter (granularity), make their radiation one absorption cross section mutual superposition, form the FWHM of broad and comparatively tangible Stokes shift.Quantum dot outstanding advantages of mixing are to adopt same pumping source more, though because quantum dot diameter difference, they all have sizable absorption cross section at short wavelength region.Because the bandwidth gain of QDFA and FWHM and Stokes shift is big or small closely related, though a part of light of the quantum dot institute radiation that diameter is big will be absorbed by the less quantum dot of diameter, but suitably adjust the diameter of doping content, doping number and the doped quantum dot of each quantum dot, can make absorption minimum in a certain wavelength zone and the radiation maximum, promptly can obtain broadening bandwidth and comparatively desirable flat gain.
According to following measurement or approximate: 1. by the radiation-absorption spectra of quantum dot as can be known, quantum dot can be by the three-level model description; 2. lead approximately a little less than optical fiber satisfies, be single-mode fiber or multimode optical fiber; 3. pump light can with flashlight in the same way or oppositely, the propagation equation of the light by each energy level population density rate equation of numerical solution, different frequency and optimization methods such as " genetic algorithms " etc., can determine the value size of a series of key parameters in many granularities doped quantum dot fiber amplifier, comprise: doping number, doping content, diameter or size-grade distribution, fiber lengths, pumping wavelength and pump power etc.Described quantum dot light fiber amplifier has wavestrip wide (can work in S-C-L all-wave band), flat gain (the smooth bandwidth of 20dB signal gain (1dB) can reach more than the 100nm)) and noise, and extremely low (noise figure～3.3dB is near advantageous characteristic such as quantum limits-3dB).
Beneficial effect of the present invention mainly shows and adopts many granularities semiconductor nanocrystal PbSe quantum dot as alloy, constitutes the optical fiber of doping PbSe quantum dot thus.Optical fiber by this many granularities doping PbSe quantum dot can be formed the quantum dot light fiber amplifier.Compare with traditional fiber amplifier, this quantum dot light fiber amplifier has outstanding advantages such as high flat gain, wide bandwidth, noise be low.
Description of drawings
The embodiment synoptic diagram of Fig. 1 quantum dot light fiber amplifier QDFA
Four. embodiment
Embodiment 1～4
A kind of semiconductor nanocrystal quantum dot light fiber amplifier.It is the optical fiber alloy that the fibre core of optical fiber adopts different grain size and number P bSe quantum dot, and the doping content of each quantum dot all is (1.0 * 10
21)/3, and in fibre core, evenly distribute; Described nanocrystalline quantum dot optical fiber amplifier comprises: pump light source, input optical fibre coupling mechanism, quanta point optical fiber, output optical fibre coupling mechanism, and wherein fiber lengths is 0.28～1.22 meter, optical fiber is core diameter 8 μ m, at ordinary optic fibre fibre core SiO
2Doping in the material.Quantum dot adopts the outer quantum dot that coats, so that keep stability; In pump wavelength
p=980nm and pump power P
pUnder the situation of=300mW, table 1 is listed the performance of the fiber amplifier of related parameter of embodiment granularity more than 1～4 doping and correspondence.
The doped quantum dot diameter has Size Distribution in the table, 5.0 expressions, 5.0 ± 0.5nm for example, and in field of nanometer technology, it represents the diameter of most of particle (more than 70%) at 5.0nm, the diameter of fraction particle is within the scope of ± 0.5nm.
| Embodiment | The doping number | The doped quantum dot diameter (± 0.5nm) | Total doping content (m -3) | Fiber lengths (m) | -3dB amplifier band width | -1dB amplifier band width | Noise figure of amplifier (dB) | Amplifier gain (dB) |
| 1 | 2 | 5.0，5.5 | 1.0×10 21 | 0.28 | 122 | 75 | 3.37 | 20 |
| 2 | 3 | 4.5，5.0，5.5 | 1.0×10 21 | 0.44 | 200 | 120 | 3.32 | 20 |
| 3 | 4 | 4.5，5.0，5.5，7.0 | 1.0×10 21 | 0.88 | 277 | 57 | 3.33 | 20 |
| 4 | 5 | 4.5，5.0，5.5，7.0，8.0 | 1.0×10 21 | 1.22 | 310 | 50 | 3.33 | 20 |
Performance wide bandwidth, the low noise characteristics of the fiber amplifier of parameter that the doping of granularity more than the table 1 is related and correspondence.The typical parameter of the present fiber amplifier EDFA of the main force (single fiber, single pumping and not with labyrinth) is-three dB bandwidth is～25dB, gain 20～25dB, noise figure 4.0～4.5dB.Our QDFA has increased a lot of times than the bandwidth of EDFA, and noise figure has reduced about 1dB, and gain then changes little.
Fig. 1 is the embodiment synoptic diagram of QDFA, and wherein WSC is a wave division multiplex coupler, and quanta point optical fiber is the part of zone circle among the figure.Do not draw among the figure to be placed on and be used to before and after the QDFA prevent the isolator of light reflection and separate wave division multiplex coupler.Flashlight is sent into WSC from left end, and pump light is sent into WSC simultaneously.In WSC, flashlight is coupled to quanta point optical fiber by compound and by after the pumping by an optical fiber.Flashlight is exaggerated in quanta point optical fiber, and pump light is suppressed or weakens, and flashlight exports to separates wave division multiplex coupler.The optical fiber of quantum dot light fiber amplifier is circumscribed, is about to the outside that quanta point optical fiber is placed on QDFA machine box, inserts by plug receptacle.Owing to can insert different quanta point optical fibers, quanta point optical fiber of different levels of doping, doping number and different length or the like can be arranged, therefore the QDFA of different performance can be arranged.What have can be used as the ultra broadband amplifier, and what have can take into account gain or the like, so that satisfy in the wavelength-division multiplex system the different requirements to QDFA.
Claims (10)
1. optical fiber of PbSe quantum dot that mixes, described optical fiber comprises fibre core and covering, it is characterized in that described fibre core adopts semiconductor nanocrystal PbSe quantum dot as alloy, described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3, it is characterized in that described alloy is the quantum dots of 2～7 kinds of particle diameter gradient differences between 0.5～1.2nm, the particle diameter of described quantum dot is 3nm～9nm.
2. the optical fiber of the described doping PbSe of claim 1 quantum dot is characterized in that the identical and space of each granularity concentration of described PbSe quantum dot evenly mixes.
3. the optical fiber of the described doping PbSe of claim 2 quantum dot is characterized in that described alloy is that 5～7 kinds of particle diameter gradient differences are the 1nmPbSe quantum dot.
4. the fiber amplifier of a doping PbSe quantum dot as claimed in claim 1, described amplifier comprises pump light source, input optical fibre coupling mechanism, the optical fiber of doping PbSe quantum dot, output optical fibre coupling mechanism, the fibre core of optical fiber of PbSe quantum dot of it is characterized in that mixing adopts the PbSe quantum dot as alloy, and described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3, described alloy is the quantum dots of 2～7 kinds of particle diameter gradient differences between 0.5～1.2nm, the particle diameter of described quantum dot is 3nm～9nm.
5. the fiber amplifier of the described PbSe quantum dot of claim 4 it is characterized in that the quantum dot concentration of described each particle diameter of PbSe quantum dot is identical, and mixes evenly in the space.
6. the amplifier of the described doping PbSe of claim 4 quanta point optical fiber is characterized in that described PbSe quanta point optical fiber length is 0.1～2m.
7. the amplifier of the described PbSe quanta point optical fiber of claim 4 is characterized in that patching of described amplifier and PbSe quanta point optical fiber is circumscribed.
8. the big device put of the described PbSe quanta point optical fiber of claim 4, the wavelength that it is characterized in that described pump light source are one of 980 ± 5nm, 1480 ± 5nm or two kinds.
9. the described many granularities doping of claim 4 PbSe quantum dot light fiber amplifier, the power that it is characterized in that described pump light source is 50mw～500mw.
10. the described PbSe quantum dot light of claim 4 fiber amplifier, it is characterized in that described described amplifier comprises pump light source, input optical fibre coupling mechanism, the optical fiber of doping PbSe quantum dot, output optical fibre coupling mechanism, described pump light source wavelength is 980 ± 5nm or 1480 ± 5nm, and pump power is 50mw～500mw; The fibre core of the optical fiber of described PbSe quantum dot is background material with silicon dioxide, and described fibre core adopts the PbSe quantum dot as alloy, and described PbSe quantum dot total concentration is 1 * 10
19～1 * 10
23Rice
-3Described alloy is that 2～7 kinds of particle diameter gradient differences are the quantum dot of 1nm, the particle diameter of described quantum dot is 3nm～9nm, fiber lengths is 0.1～2m, the PbSe quantum dot concentration of each particle diameter is mutually identical, and evenly mix in the space, and patching of described amplifier and PbSe quanta point optical fiber is circumscribed.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101792567A (en) * | 2010-02-11 | 2010-08-04 | 浙江工业大学 | Quantum dot optical fiber core material with PMMA as substrate and preparation and application thereof |
| RU2451975C1 (en) * | 2011-06-15 | 2012-05-27 | Михаил Александрович Аллес | Optical maximum signal nanoselector |
| KR20140027784A (en) * | 2012-08-27 | 2014-03-07 | 광주과학기술원 | All-optical fiber isolator using optical fiber incorporated with quantum dots |
| US9618777B2 (en) | 2012-08-27 | 2017-04-11 | Zetto, Ltd. | All-fiber isolator using optical fiber including quantum dots |
| CN108519714A (en) * | 2018-06-27 | 2018-09-11 | 浙江工业大学 | A kind of sodium Boroalumino silicate glasses near-infrared broadband PbSe quantum dot light fiber amplifiers |
| CN111293581A (en) * | 2020-02-21 | 2020-06-16 | 上海大学 | Few-mode optical fiber for amplification and application thereof |
-
2007
- 2007-12-07 CN CNA2007101645634A patent/CN101206281A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101792567A (en) * | 2010-02-11 | 2010-08-04 | 浙江工业大学 | Quantum dot optical fiber core material with PMMA as substrate and preparation and application thereof |
| CN101792567B (en) * | 2010-02-11 | 2012-02-22 | 浙江工业大学 | Quantum dot optical fiber core material with PMMA as substrate and preparation and application thereof |
| RU2451975C1 (en) * | 2011-06-15 | 2012-05-27 | Михаил Александрович Аллес | Optical maximum signal nanoselector |
| KR20140027784A (en) * | 2012-08-27 | 2014-03-07 | 광주과학기술원 | All-optical fiber isolator using optical fiber incorporated with quantum dots |
| KR101713679B1 (en) | 2012-08-27 | 2017-03-09 | 광주과학기술원 | All-optical fiber isolator using optical fiber incorporated with Quantum dots |
| US9618777B2 (en) | 2012-08-27 | 2017-04-11 | Zetto, Ltd. | All-fiber isolator using optical fiber including quantum dots |
| CN108519714A (en) * | 2018-06-27 | 2018-09-11 | 浙江工业大学 | A kind of sodium Boroalumino silicate glasses near-infrared broadband PbSe quantum dot light fiber amplifiers |
| CN111293581A (en) * | 2020-02-21 | 2020-06-16 | 上海大学 | Few-mode optical fiber for amplification and application thereof |
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Application publication date: 20080625 |