WO1996006358A1 - Transducer - Google Patents
Transducer Download PDFInfo
- Publication number
- WO1996006358A1 WO1996006358A1 PCT/GB1995/001966 GB9501966W WO9606358A1 WO 1996006358 A1 WO1996006358 A1 WO 1996006358A1 GB 9501966 W GB9501966 W GB 9501966W WO 9606358 A1 WO9606358 A1 WO 9606358A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transducer
- mass
- seismic mass
- deflection
- force
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/13—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
- G01P15/131—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position with electrostatic counterbalancing means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
Definitions
- This invention relates to a transducer for use in an accelerometer or other force transducer and in particular to a micro-accelerometer fabricated as a chip from a semiconductor material wafer using manufacturing techniques analogous to those of integrated circuits.
- micro-accelerometers find applications in the motor and aerospace industries as inputs for control systems; in the motor industry the uses include triggering air bags and as inputs to suspension systems.
- Micro-accelerometers can be single axis devices, sensitive in a single direction, which are then assembled to form a three dimensional unit.
- Accelerometers may have to survive over-shocks of hundreds of times their normal operating range and usually employ deflection stops incorporated into the structure to prevent damage. Accelerometers built from single-crystal semiconductor material exhibit very low mechanical loss and need to have controlled damping in order to ensure high- fidelity transduction of acceleration.
- Accelerometer systems with Self-Testable Features by Allen, Terry and De Bruin, Sensors and Actuators, 20 (1989) 153-161, incorporated herein by reference, a single axis accelerometer having a double cantilever structure is disclosed. Such a device has a seismic mass supported through four silicon springs and the mass can move in a pure translational mode as shown in Figure la.
- EP 322093 A discloses a deflectable seismic mass constructed from a single wafer of silicon.
- the mass moves rectilinearly in response to a force applied perpendicularly to the surface of the wafer.
- All of the embodiments disclosed show masses in which movement in the ⁇ 1,1,1, ⁇ plane is constrained and which deflect in a plane perpendicular to the ⁇ 1,1,1 ⁇ plane and the surface of the wafer (the ⁇ 1,0,0 ⁇ silicon plane).
- the mass when subjected to a force which is not perpendicular the ⁇ 1,0,0, ⁇ silicon plane, tends to move and rock through the deflectable plane.
- the mass of figure 5 of EP 322093 is constrained to rotate about a line parallel to the ⁇ 1,1,1 ⁇ silicon plane, positioned at the intersection of the planes defined by flexible members 24" and 26".
- the devices disclosed are also unsuitable for use in a flat, single wafer device which is sensitive in all three dimensions. As before, a lack of symmetry in the mass will cause unwanted rotational movements.
- a transducer comprising a deflectable seismic mass supported on a frame by support means, said seismic mass at rest including a plane, characterised in that the seismic mass when deflected by any force retains the plane substantially parallel to the rest position.
- a transducer comprising a deflectable seismic mass supported on a frame by support means characterised in that any deflection of the seismic mass is purely translational.
- a third aspect of the invention there is provided a method of manufacturing a transducer according to the first or second aspect.
- a single axis accelerometer including a force transducer according to the first or second aspect.
- a three dimensional accelerometer including a force transducer according to the first or second aspect.
- the invention also allows three identical structures to be etched onto a flat semiconductor wafer and yet can be used to determine accelerations in three perpendicular directions.
- the structures deflect such that the surfaces of their seismic masses always remain parallel to the wafer surface. This enables measurement of the deflection to be made easily, for example by depositing electrodes on the surfaces of the seismic masses and fixed surfaces (such as deflection stops) and measuring the change in capacitance between the electrodes.
- Cross coupling effects will be negligible since each transducer is stiff in all directions except the sensitive direction.
- etching and/or doping techniques may be employed to micromachine the transducer . It may also be possible to include the measuring means on the same wafer as the transducer. Embodiments of the invention are described in detail below, by way of example only, with reference to the figures in which,
- Figure 1 illustrates the three modes of motion of the prior art
- Figure 2 shows a first embodiment of the invention
- Figure 3 shows a process for etching the first embodiment
- Figure 4 shows a suitable configuration for the first embodiment
- Figure 5 shows a second embodiment of the invention
- Figure 6 shows a suitable configuration for the second embodiment
- Figure 7 shows an alternative arrangement for the second embodiment
- Figure 8 shows an arrangement for measuring the deflection of the seismic mass
- Figure 9 shows an alternative arrangement for measuring the deflection of the mass
- Figure 10 shows a null arrangement for measuring the deflection of the mass
- Figure 11 shows a null construction for the first embodiment of the invention
- Figure 12 shows the orientation of three transducers in a three dimensional structure.
- Figure 2 shows a first embodiment of the invention employing a quad bridge structure.
- the transducer consists of a seismic mass 10 supported on a frame 11 by four flexible support elements 12.
- the flexible support elements consist of thin parallel beams formed at an angle ⁇ to the surface of the mass.
- the device Taking the three perpendicular axes Ox, Oy and Oz, with the Ox axis parallel to the longitudinal axis of the beams and Oz perpendicular to the face of the beams, the device is stiff in the Ox and Oy directions but will, when subjected to a force, deflect in the Oz direction.
- the deflection of the mass, or the force required to maintain a null position, can be used as a measure of the acceleration of the mass.
- FIG. 3a shows a section through a silicon slice or wafer 15 the upper surface of which has been masked, by a mask 16, over some of its area.
- the cavity formed When etched through the mask the cavity formed always has flat walls which lie at an angle ⁇ to the surface of the slice. In (1,0,0) silicon this angle is 54.7° and the walls 17 formed correspond to (1,1,1) surfaces.
- Figure 3 b illustrates that by etching similar cavities in the underside of the silicon slice, with appropriate masking, by a mask 18, and timing of the etching process, it is possible to produce thin beams 19 suitable for use in the transducer.
- the walls 17 may be doped, for example with boron.
- the doped areas are impervious to etchant and will remain after the etching process is complete. It would be possible to etch both sides simultaneously, or to etch sequentially.
- Figure 4 shows a suitable configuration, with figure 4a , 4b, 4c and 4d showing the respective cross sections A-A, B-B, C-C and D-D. Variations in the detailed shape of the seismic mass 10, the frame 11 and the support elements 12 will depend on the type of mask and etching process used. The sensitive direction is shown by the arrow 20.
- Figure 5 shows an second embodiment in which the four support elements are replaced by two support beams 30 attaching the seismic mass 10 to the frame 1 1.
- the device Taking the three perpendicular axes Ox, Oy and Oz, with the Ox axis in the plane of the mass and parallel to the plane of the and Oz perpendicular to the plane of the beam, the device is stiff in the Ox and Oy directions but will, when subjected to a force, deflect in the Oz direction.
- the deflection of the mass, or the force required to maintain a null position can be used as a measure of the acceleration of the mass.
- Figure 6 shows a suitable configuration, with figures 6a and 6b showing the respective cross sections A-A and B-B.
- Figure 8 shows a cross section of the mass 10, between an upper deflection stop 40 and a lower deflection stop 41. Pairs of electrodes 42,43 may be deposited directly onto the mass and the fixed surfaces of the deflection stops to form a push-pull capacitor. Since both the upper and lower surfaces of the mass remain parallel to the fixed surfaces of the deflection stops, the change in the capacitance between the electrodes on the fixed surfaces and the electrodes on the movable surfaces will be a direct measure of the amount of deflection of the mass, and thus the acceleration.
- Figure 9 shows an alternative arrangement which avoids the need for supplying an electrical connection to the mass.
- a pair of electrodes 42,43 is deposited on the upper deflection stop 40 and the lower deflection stop 41.
- a conducting layer 44 is deposited on the upper and lower surfaces of the mass 10. Electrodes 42,44 and 43,44 form two capacitors in series at each of the upper and lower gaps. As with the previous arrangement, the change in the capacitance will be a direct measure of the amount of deflection of the mass, and thus the acceleration.
- Figure 10 shows a null arrangement whereby the deflection of the mass is counteracted.
- a conducting layer 44 is deposited on a surface of the mass 10 adjacent to a deflection stop (not shown). Pairs of electrodes 42,43 are deposited on the deflection stop and as with the arrangement illustrated in figure 8, the change in the capacitance will be a direct measure of the amount of deflection of the mass, and thus the acceleration.
- Two actuators 45,46, also deposited on the deflection stop, are used the counteract the deflection of the mass by means of suitable voltages applied to electrodes 45 and 46.
- figure 11 shows an null arrangement for the first embodiment illustrated in figure 2 and consists of a seismic mass 10 supported on a frame 11 by four flexible support elements 12.
- Two thin null beams 50 prevent movement of the mass; any force applied on the mass in the sensitive direction (marked by arrow 20) will apply a tensile load to one beam and a compressive load to the other beam. If the beams are caused to vibrate at their natural frequencies of transverse vibration, these natural frequencies will change as the tensile and compressive loads change. The differences in the natural frequencies of these beams is proportional to the acceleration of the mass.
- Figure 12 shows a three dimensional layout where three of the single axis devices can be produced on a single wafer of silicon.
- the properties of (1,0,0) silicon are such that it is possible to produce two or more identical transducers which are rotated, about an axis normal to the wafer (OY), by 90° intervals relative to the first device.
- O ⁇ zi O2Z2 and O3Z3 are the sensitive directions for each transducer. If the acceleration components measured along OjZ], O2Z2 and O3Z3 are aj, a2 and a.$- respectively, the accelerations A along the three perpendicular axes Ox, Oy and Oz are
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95928591A EP0776475A1 (en) | 1994-08-18 | 1995-08-18 | Transducer |
JP8507867A JPH10504649A (en) | 1994-08-18 | 1995-08-18 | Transducer |
KR1019970701018A KR970705755A (en) | 1994-08-18 | 1995-08-18 | TRANSDUCER |
US08/791,731 US5962788A (en) | 1994-08-18 | 1997-01-31 | Transducer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9416683.2 | 1994-08-18 | ||
GB9416683A GB9416683D0 (en) | 1994-08-18 | 1994-08-18 | Accelerometer |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/791,731 Continuation US5962788A (en) | 1994-08-18 | 1997-01-31 | Transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996006358A1 true WO1996006358A1 (en) | 1996-02-29 |
Family
ID=10760018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1995/001966 WO1996006358A1 (en) | 1994-08-18 | 1995-08-18 | Transducer |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0776475A1 (en) |
JP (1) | JPH10504649A (en) |
KR (1) | KR970705755A (en) |
GB (2) | GB9416683D0 (en) |
TW (1) | TW297909B (en) |
WO (1) | WO1996006358A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0730157B1 (en) * | 1995-02-23 | 1999-10-27 | Siemens Aktiengesellschaft | Acceleration sensor |
JP2009075115A (en) * | 1998-01-23 | 2009-04-09 | Autoliv Development Ab | Constitution for measuring angular velocity |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2810976B1 (en) * | 2000-06-29 | 2003-08-29 | Planhead Silmag P H S | ELECTRONIC MICRO-COMPONENT, SENSOR AND ACTUATOR INCORPORATING SUCH A MICRO-COMPONENT |
GB2498520A (en) * | 2012-01-13 | 2013-07-24 | Secr Defence | Accelerometer |
US10634499B2 (en) * | 2015-06-11 | 2020-04-28 | Georgia Tech Research Corporation | MEMS inertial measurement apparatus having slanted electrodes for quadrature tuning |
CN114323395B (en) * | 2021-12-23 | 2022-11-11 | 西安交通大学 | MEMS six-axis force sensor chip based on SOI technology and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0301816A2 (en) * | 1987-07-29 | 1989-02-01 | GEC-Marconi Limited | Accelerometer |
EP0322093A2 (en) * | 1987-12-21 | 1989-06-28 | Ford Motor Company Limited | Rectilinearly deflectable element fabricated from a single wafer |
WO1990010207A1 (en) * | 1989-02-27 | 1990-09-07 | Sundstrand Data Control, Inc. | Unitary push-pull force transducer |
WO1994012886A1 (en) * | 1992-12-03 | 1994-06-09 | Saab Scania Combitech Ab | A device for measuring force components in monocristalline material, a method for manufacturing such a device and a use of such a device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5000817A (en) * | 1984-10-24 | 1991-03-19 | Aine Harry E | Batch method of making miniature structures assembled in wafer form |
US4922756A (en) * | 1988-06-20 | 1990-05-08 | Triton Technologies, Inc. | Micro-machined accelerometer |
US4919993A (en) * | 1989-02-27 | 1990-04-24 | Sundstrand Data Control, Inc. | Flexures and method for creating flexures in a wafer |
US5045152A (en) * | 1989-03-06 | 1991-09-03 | Ford Motor Company | Force transducer etched from silicon |
-
1994
- 1994-08-18 GB GB9416683A patent/GB9416683D0/en active Pending
-
1995
- 1995-08-18 WO PCT/GB1995/001966 patent/WO1996006358A1/en not_active Application Discontinuation
- 1995-08-18 JP JP8507867A patent/JPH10504649A/en active Pending
- 1995-08-18 GB GB9516992A patent/GB2292462A/en not_active Withdrawn
- 1995-08-18 EP EP95928591A patent/EP0776475A1/en not_active Withdrawn
- 1995-08-18 KR KR1019970701018A patent/KR970705755A/en not_active Application Discontinuation
- 1995-08-19 TW TW084108671A patent/TW297909B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0301816A2 (en) * | 1987-07-29 | 1989-02-01 | GEC-Marconi Limited | Accelerometer |
EP0322093A2 (en) * | 1987-12-21 | 1989-06-28 | Ford Motor Company Limited | Rectilinearly deflectable element fabricated from a single wafer |
WO1990010207A1 (en) * | 1989-02-27 | 1990-09-07 | Sundstrand Data Control, Inc. | Unitary push-pull force transducer |
WO1994012886A1 (en) * | 1992-12-03 | 1994-06-09 | Saab Scania Combitech Ab | A device for measuring force components in monocristalline material, a method for manufacturing such a device and a use of such a device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0730157B1 (en) * | 1995-02-23 | 1999-10-27 | Siemens Aktiengesellschaft | Acceleration sensor |
JP2009075115A (en) * | 1998-01-23 | 2009-04-09 | Autoliv Development Ab | Constitution for measuring angular velocity |
JP4577671B2 (en) * | 1998-01-23 | 2010-11-10 | オートリブ デベロップメント アクテボラゲット | Configuration for angular velocity measurement |
Also Published As
Publication number | Publication date |
---|---|
GB9416683D0 (en) | 1994-10-19 |
EP0776475A1 (en) | 1997-06-04 |
TW297909B (en) | 1997-02-11 |
JPH10504649A (en) | 1998-05-06 |
GB2292462A (en) | 1996-02-21 |
GB9516992D0 (en) | 1995-10-18 |
KR970705755A (en) | 1997-10-09 |
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