WO1995023878A1 - Diamond-like carbon coated transducers for magnetic recording media - Google Patents
Diamond-like carbon coated transducers for magnetic recording media Download PDFInfo
- Publication number
- WO1995023878A1 WO1995023878A1 PCT/US1995/002760 US9502760W WO9523878A1 WO 1995023878 A1 WO1995023878 A1 WO 1995023878A1 US 9502760 W US9502760 W US 9502760W WO 9523878 A1 WO9523878 A1 WO 9523878A1
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- WIPO (PCT)
- Prior art keywords
- deposited
- deposition
- transducer
- ion beam
- interlayer
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 80
- 239000010410 layer Substances 0.000 claims abstract description 126
- 238000000576 coating method Methods 0.000 claims abstract description 114
- 238000000151 deposition Methods 0.000 claims abstract description 97
- 238000000034 method Methods 0.000 claims abstract description 96
- 239000011248 coating agent Substances 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 230000008021 deposition Effects 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 65
- 239000011229 interlayer Substances 0.000 claims abstract description 56
- 150000002500 ions Chemical class 0.000 claims abstract description 46
- 238000007737 ion beam deposition Methods 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 230000001976 improved effect Effects 0.000 claims abstract description 21
- 238000000992 sputter etching Methods 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 23
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 21
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000356 contaminant Substances 0.000 claims description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229930195733 hydrocarbon Natural products 0.000 claims description 14
- 150000002430 hydrocarbons Chemical class 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 230000001965 increasing effect Effects 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- -1 carbon ion Chemical class 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000005299 abrasion Methods 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- 238000000608 laser ablation Methods 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 66
- 239000010408 film Substances 0.000 description 52
- 229910052739 hydrogen Inorganic materials 0.000 description 27
- 239000001257 hydrogen Substances 0.000 description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 229910021385 hard carbon Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 229910003481 amorphous carbon Inorganic materials 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 150000001721 carbon Chemical class 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 230000001464 adherent effect Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000011253 protective coating Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- 230000001050 lubricating effect Effects 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 238000010420 art technique Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 239000000314 lubricant Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000013341 scale-up Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000010407 vacuum cleaning Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
- G11B5/255—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for protection against wear
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
Definitions
- This invention relates to transducer assemblies utilized in magnetic recording devices. More particularly, the invention relates to a transducer for use with magnetic recording media e.g. thin film magnetic heads, magnetoresistive (MR) read heads, inductive heads, sliders, and tape heads.
- magnetic recording media e.g. thin film magnetic heads, magnetoresistive (MR) read heads, inductive heads, sliders, and tape heads.
- MR magnetoresistive
- DLC was initially intended to define a pure carbon material, the term DLC now used includes amorphous, hard carbon materials containing up to 50 atomic percent of hydrogen. Other names for these hydrogen-containing DLC materials are "amorphous hydrogenated carbon", hydrogenated diamond-like carbon, or diamond-like hydrocarbon.
- the structure of these hydrogen-containing hard carbon materials may be best described as a random covalent network of graphitic-type structures interconnected by sp 3 linkages, although the definitive structure of the films has yet to be universally accepted.
- DLC is used in the present invention to refer to both the amorphous non-hydrogenated hard carbon materials, and the amorphous hydrogenated hard carbon materials.
- DLC films Many methods for directly depositing DLC films are known in the prior art, including (i) direct ion beam deposition, dual ion beam deposition, glow discharge, radio frequency (RF) plasma, direct current (DC) plasma or microwave plasma deposition from a carbon-containing gas or vapor which can also be mixed with hydrogen and/or inert gas, (ii) electron beam evaporation, ion-assisted evaporation, magnetron sputtering, ion beam sputtering, or ion-assisted sputter deposition from a solid carbon target material, or (iii) combinations of (i) and (ii).
- RF radio frequency
- DC direct current
- microwave plasma deposition from a carbon-containing gas or vapor which can also be mixed with hydrogen and/or inert gas
- electron beam evaporation ion-assisted evaporation
- magnetron sputtering magnetron sputtering
- ion beam sputtering
- DLC films are well known in the art and have been recognized as potential coatings to enhance the abrasion resistance of various substrate materials, including recording media.
- the DLC coatings possess excellent mechanical properties such as high hardness and low coefficient of friction, and exhibit excellent resistance to abrasion and chemical attack by nearly all known solvents, bases, and acids.
- the DLC coatings will impart improved wear resistance to the substrate only if the adherence of the coating to the parent substrate is excellent.
- DLC coatings are typically under significant compressive stress, on the order of 5 x 10 9 to approximately 5 x 10 10 dynes/cm 2 . This stress greatly affects the ability of the coating to remain adherent to the substrate. Additionally, the surface of the substrate to be coated often contains alkali metals, oxides, and other contaminants which can inhibit bonding of the DLC coating. Therefore, less obvious methods are required to produce a substrate with a highly adherent DLC coating which provides excellent abrasion resistance.
- Magnetic transducers which include thin film magnetic heads, magneioresistive (MR) read heads, inductive heads, sliders, and tape heads, utilized in magnetic recording media have been known in the art for many years. Their susceptibility to damage is also well known.
- a magnetic transducer used in recording media is a magnetic head slider.
- the slider supports a thin film magnetic read/write head, which is formed by depositing layers of magnetic material, electrically conductive material, and electrically insulating material to form the magnetic pole pieces and magnetic gap which are necessary for the transducing function with the magnetic coating on a magnetic recording medium. After lapping the magnetic head to a predetermined "throat height" dimension, a pattern of rails is produced on the lapped surface to form an air bearing surface which is used to "fly" the magnetic head over the magnetic recording medium.
- the air bearing surface of the slider contacts the magnetic disk during start-up and shutdown of the disk rotation, and sometimes inadvertently during operation. In conventional sliders and recording media, this contact results in transfer of disk material (wear debris) to the slider, which degrades the aerodynamics of the slider and increases friction. The presence of the wear debris and the increased friction can at times result in catastrophic failure and loss of stored information.
- Tape heads used with magnetic recording tape also suffer failure due to wear and corrosion.
- the magnetic pole pieces are worn away by abrasive materials in magnetic tape.
- the magnetic materials on the transducer are also degraded by environmental corrosion.
- magnetic transducers such as thin film magnetic heads and magnetoresi stive heads are fabricated from materials that are attacked by atmospheric constituents, such as moisture. Prolonged exposure of the transducer materials to atmosphere often results in degradation of performance due to oxidation and corrosion of the head materials.
- U.S. Pat. No. Re 32,464 teaches a magnetic recording medium coated with a sputter-deposited graphitic carbon protective layer having thickness between 1-5 microinches. Use of an adhesion-promoting carbide-forming layer between the disk and the carbon film is disclosed and claimed. Additionally, "the magnetic transducer head portion which occasionally sinks into contact with the recording medium is preferably formed of or coated with carbon, preferably in the form of graphite, to provide a low friction wear resistant contacting surface with the recording medium". The carbon layer may also be deposited by ion plating. Aine further states that the sputtering apparatus allows the substrate surfaces and the surfaces of subsequent layers which are to be coated to be cleaned by bombarding such surfaces with ions for cleaning away any surface contaminants.
- amorphous hydrogenated carbon is deposited by sputtering a carbon target in an atmosphere of argon and hydrogen. The deposition rate is approximately 6-7 A/minute. A 100 A thick titanium layer is used as an adhesion layer.
- Plasma deposition is preferred because the same processing equipment and steps can be used to form the silicon layer and the overlying hard carbon layer. Therefore, both the silicon layer and the hard carbon layer can be formed by plasma deposition without breaking the vacuum in the system. Changing the source gasses, e.g., from silane to acetylene, are the only additional steps that are necessary. The patentees also state that hard carbon layer can be also deposited by sputtering and other methods. The patentees still further teach the silicon layer is exposed for 45 minutes to a hydrogen plasma to provide both reactive and sputtered cleaning of the growth surface and also to further reduce the native oxide layer on the silicon. This cleaning time is very long, and unacceptable for industrial production.
- the hydrogen plasma preclean does not, by itself completely remove the native oxide from the silicon substrate.
- improved methods of precleaning the substrate prior to depositing the hard carbon coating are needed.
- the patentees also disclose difficulties in the use of plasma deposition of the hard carbon layer; see column 6, line 67 through column 7, line 3.
- Japanese Laid Open Pat. Application (Kokai) No. 1-287819, Shinora claims a magnetic recording medium (magnetic disk or magnetic tape) in which a diamond-form hard carbon thin film is located on a strongly magnetic metal thin film with a silicon or germanium layer, interposed between the two. Ion plating, high frequency sputtering, and electron beam evaporation are disclosed as methods for depositing silicon and germanium films, from thickness of 20 to 50 A.
- the diamond-like carbon film has a thickness between 50 and 100 A and can be formed by high frequency sputtering, ion beam deposition, or plasma acceleration.
- the diamond-like carbon layer is then overcoated with a lubricant to form the final product.
- a magnetic recording medium composed of a magnetic film formed on the surface of a disk-shaped substrate and a protective film further formed on the surface of the magnetic film.
- the protective film is composed of a first layer containing silicon, germanium, or chromium oxide, and a second (top) layer of amorphous carbon or graphite-containing amorphous carbon.
- the first and second layers can be formed by a variety of sputtering techniques including magnetron sputtering, diode sputtering, and ion beam sputtering.
- the patentees teach that the first layer containing chromium oxide, silicon, and germanium formed on the magnetic film excels in resistance to corrosion and weather conditions.
- the second layer of amorphous carbon or graphite-containing amorphous carbon excels in lubricating property.
- the thickness of a first layer of elemental silicon is in the range of 100 to 300 A. It is also taught that the second (carbon) layer is desired to have a thickness in the range of 200 to 700 A. If the thickness is smaller than 200 A, the effectiveness of the second (carbon) layer in improving the lubricating property is not sufficient.
- the patentees further state that if the resistance of the carbon layer exceeds 10 4 ohm-cm, the amorphous carbon assumes a texture approximating the diamond structure and shows insufficient lubricating properties.
- the patentees demonstrate that carbon films having properties which are more diamond-like than those in the claimed range perform much worse in contact-stop-start (CSS) tests than the amorphous carbon or graphite-containing amorphous carbon films of the patentees' invention.
- the graphite-containing amorphous carbon layers provide resistance for 40,000-130,000 CSS cycles, whereas carbon films with the diamond-like structure provide resistance for 10,000-16,000 CSS cycles.
- the graphite-containing amorphous carbon films are much more resistant to permeation by water than with the diamond-like structure.
- Kurokawa et al. U.S. Pat No. 4,717,622, discloses a magnetic recording medium with a protective layer of high hardness carbon synthesized under a low temperature and low pressure gas plasma.
- the magnetic recording medium is useful in a system where the magnetic head contacts the magnetic recording medium.
- the diamond-like carbon film has a Vicker's hardness of more than 2,000 kg/mm 2 , and a specific resistance of 10 7 ohm-cm to 10 13 ohm-cm.
- the patentees refer to their diamond-like carbon coatings having properties in the aforementioned range as "amorphous diamond". It is specifically stated that amorphous carbon films having a hardness in the range of 1,500 kg/mm 2 are "soft".
- Nakamura et al. U.S. Pat No. 4,804,590, teach an abrasion resistant magnetic recording member comprising a carbonaceous surface protective film on a surface of a magnetic film on the surface of a nonmagnetic substrate.
- the protective film has a lower layer of comparatively hard carbonaceous film and an upper layer of comparatively soft carbonaceous film.
- An intermediate layer of chromium, titanium, etc. may by used to improve the adhesion of the carbonaceous film to the magnetic film.
- the lower carbonaceous layer contains 5 atomic percent or less of hydrogen, fluorine, or a combination of hydrogen and fluorine
- the upper carbonaceous layer contains 6 atomic percent or more or hydrogen, fluorine, or a combination of hydrogen and fluorine.
- the lower carbonaceous layer may be a sputtered carbonaceous film
- the upper layer may be a plasma chemical vapor deposited (PCVD) carbonaceous film.
- IBM Technical Disclosure Bulletin, Vol. 25, No. 7A (1982) page 3173 discusses a magnetic slider made of silicon which is coated with an extremely hard surface layer of silicon carbide or diamond-like carbon.
- the sufficient thickness of the silicon carbide or diamond-like carbon surface layer is in the range of 50 nm to 100 nm.
- the diamond-like carbon layer can be produced by ion beam or plasma deposition.
- Bleich et al. U.S. Pat. No. 5,151,294, discloses a method for depositing a thin protective carbon film on the air bearing surface of a slider in a magnetic recording disk file by contacting the slider and a rotating magnetic disk for a time sufficient to cause transfer of the carbon from a carbon overcoated disk to the air bearing surface of the slider.
- the patentees teach that the carbon film formed on the slider is an essentially amorphous hydrogenated carbon film approximately 50 A in thickness.
- Japanese Laid Open Pat. Application (Kokai) No. 3-25716 discloses a magnetic head slider, characterized by the fact the head slider body is made of a soft ceramic material, such as ferrite, and a hard ceramic membrane such as carbon, silicon, zirconium dioxide, aluminum oxide, or the like, which is bonded and molded onto at least the pressure-receiving surface of the slider which faces the magnetic disk.
- This disclosure is said to offer advantages in manufacturing of the slider, because softer ceramic substrate materials are used in processing.
- the hard ceramic membrane has a thickness in range of several hundred Angstroms, and may be made by a plasma chemical vapor deposition (PCVD) method.
- PCVD plasma chemical vapor deposition
- Grill et al. U.S. Pat. No. 5,159,508, teaches a magnetic head slider coated with an adhesion layer and a protective diamond-like carbon layer.
- the coating is fabricated onto the substrate after a lapping operation, but before patterning of the rails onto the slider, which protects the magnetic head during the fabrication process.
- the slider has at least two rails on the air bearing surface, and the rails have a protective coating comprising an adhesion layer, typically about 10 A to 50 A in thickness, and a thin layer of amorphous hydrogenated carbon, less than about 250 A thick.
- Grill et al. teach that the two layers of the protective coating can be deposited by any suitable technique, e.g. PACVD, ion beam or laser techniques. The preferred technique is by the use of a DC biased substrate in an RF plasma deposition apparatus.
- DC magnetron sputtering and RF magnetron sputtering are presented as preferred methods for depositing the amorphous hydrogenated carbon film.
- Japanese Laid Open Pat. Application JP 58-150,122 describes a magnetic head which has a thin film of a material, e.g. carbon, having a lubricating effect on the surface of the head which faces the magnetic recording medium.
- the thickness of the film is disclosed to be in within the range of 200 A to 5000 A.
- German Pat. Application No. DE 3,714,787 describes a storage system in which the surface of a magnetic disk is coated with friction-reducing carbon and the rails of the magnetic head slider are coated with a friction reducing carbon.
- the thickness of the carbon is 10 to 1000 A.
- the prior art methods for application of DLC coatings on magnetic media transducers such as thin film heads and tape heads all suffer from one or more of the following deficiencies and shortcomings: (i) difficulty in pre-cleaning of substrates prior to deposition; (ii) adhesion of diamond-like carbon coating; (iii) permeation of amorphous carbon films by water vapor and oxygen; (iv) fabrication of coherent, dense coatings which perform well at thicknesses less than 200 A; (v) poor electrical resistivity of the coating due to the use of low resistivity Ti, Cr, or Si adhesion layers between the transducer and the DLC coating, or a "graphitic", low resistivity DLC layer; (vi) control of DLC coating properties during a deposition run and batch-to-batch variation of DLC coating characteristics; (vii) DLC coating thickness control and reproducibility of thickness; (viii) part-to-part and batch-to-batch control of DLC coating uniformity; (ix) production readiness and ability to scale-up the deposition process for mass production;
- an adhesion-promoting interlayer is required to achieve excellent adhesion between the magnetic transducer substrate and the protective DLC coating.
- layers such as Ti, Cr, and Si, deposited by magnetron sputter deposition, evaporation, and plasma deposition have been used for this purpose. Achieving a highly dense (non-porous), adherent, adhesion-promoting layer still remains a problem with the prior art techniques.
- Deposition of a silicon interfacial layer by plasma deposition such as disclosed in U.S. Pat. No. 4,647,494 as discussed above, has the additional disadvantage that the feed gas used is silane, which is an extremely flammable and toxic material. Feed gases of this nature are required by the plasma deposition technique for deposition of silicon layers of high purity.
- One of the key requirements of the protective DLC coating on magnetic transducers is the need to provide a barrier to moisture and oxygen. This requires formation of a DLC structure with optimal atom packing density. This atom packing density is maximized by a high degree of ion bombardment during film growth, which is not easily attainable or optimized by the magnetron sputter deposition or plasma deposition methods of the prior art. In addition, the difficulty in forming DLC films of maximum atom packing density by the magnetron sputter deposition and plasma deposition methods of the prior art makes deposition of coherent, corrosion resistant pinhole-free films less than 200 A thick extremely difficult.
- the protective coating it is often critical for the protective coating to be highly electrically insulating.
- the electrical conductivity of the sputter-deposited carbon film may be too high, causing electrical losses in the transducer.
- Electrical conduction paths can also be provided by low resistivity Ti, Cr, or Si adhesion layers of the prior art.
- a protective DLC coating in which both the DLC layer and the adhesion-promoting interlayer are electrically non-conducting.
- the deposition rates of amorphous carbon materials by magnetron sputter deposition from a carbon target are very low, on the order of 10 A/minute or less, see U.S. Pat. No. 4,778,582 discussed above, resulting in excessively long production times.
- the plasma deposition methods offer much higher deposition rates, it is difficult to reproducibly control deposition thickness, deposition rate and deposition uniformity across large areas with plasma deposition methods. Due to their inherent high deposition rates, the plasma deposition methods (RF plasma, DC plasma and microwave plasma) are well-suited to fabrication of thick coatings of diamond-like carbon for many industrial applications on wear parts. However, because of the interdependence of process variables such as pressure, gas flow rate, power, and substrate bias, accurate control of deposition thickness is difficult.
- Examples of complex geometry include sliders already mounted on their suspension systems, and tape heads or other transducers which have been packaged complete with electrical connectors (e.g. wires).
- electrical connectors e.g. wires
- the plasma deposition methods are more conducive to application of the DLC coating while sliders, for example are still joined on a chip as in U.S. Pat. Nos. 5,159,508 and 5,175,658 discussed above.
- An improved manufacturing method would be very desired that allows the DLC coating to be applied to magnetic transducer assemblies of complex geometry. Additionally, an improved manufacturing method is needed that allows the DLC coating to be deposited as the final step in the transducer manufacturing process. In this way, the DLC coating process could be readily integrated into current transducer assembly manufacturing lines.
- the invention provides a magnetic transducer assembly with superior wear resistance, and improved lifetime. More particularly, this invention provides an ion beam deposited DLC coating to the surface of a magnetic transducer which is highly adherent, and exhibits greatly improved wear resistance and environmental durability. This invention also provides a low cost and efficient process for mass-producing the diamond-like carbon coated magnetic transducer with improved wear resistance and superior lifetime.
- a magnetic transduc r is provided with a composite coating structure including an adhesion-enhancing first interlayer containing silicon and an ion beam deposited DLC top layer.
- the invention further provides a method for fabricating the protective DLC coating on the magnetic transducer.
- the surface of the magnetic transducer substrate is chemically cleaned to remove contaminants, ie. unwanted materials and other contaminants.
- the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated.
- the substrate surface is bombarded with energetic ions to assist in the removal of residual contaminants, i.e. hydrocarbons and surface oxides, and to activate the surface.
- a silicon-containing interlayer material is deposited, preferably by ion beam sputter deposition.
- a DLC outer layer is deposited by ion beam deposition. Once the chosen thickness of the DLC layer has been achieved, the deposition process on the transducer substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the DLC-coated magnetic transducer substrates are removed from the vacuum chamber.
- FIG. 1 is an illustration of the ion beam deposition apparatus used to manufacture DLC-coated magnetic transducers in accordance with the present invention
- FIG. 2A is a graph of frictional force versus the number of test revolutions in a constant speed drag test for an uncoated TiC/Al 2 O 3 slider;
- FIG. 2B is a graph of touch down velocity change versus the number of test revolutions in a constant speed drag test for an uncoated TiC/Al 2 O 3 slider;
- FIG. 2C is a graph of frictional force versus the number of test revolutions in a contact- start- stop test for an uncoated TiC/Al 2 0 3 slider
- FIG. 2D is a graph of touch down velocity change versus the number of test revolutions in a contact-start-stop test for an uncoated TiC/Al 2 0 3 slider;
- FIG. 3A is a graph of frictional force versus the number of test revolutions in a constant speed drag test for a slider coated with 100 A of DLC according to the present invention
- FIG. 3B is a graph of touch down velocity change versus the number of test revolutions in a constant speed drag test for a slider coated with 100 A of DLC according to the present invention
- FIG. 4A is a graph of frictional force versus the number of test revolutions in a constant speed drag test for a slider coated with 50 A of DLC according to the present invention
- FIG. 4B is a graph of touch down velocity change versus the number of test revolutions in a constant speed drag test for a slider coated with 50 A of DLC according to the present invention
- FIG. 5A is a graph of frictional force versus the number of test revolutions in a contact- start-stop test for a slider coated with 100 A of DLC according to the present invention.
- FIG. 5B is a graph of touch down velocity change versus the number of test revolutions in a contact- start-stop test for a slider coated with 100 A of DLC according to the present invention.
- the method of the present invention substantially reduces or eliminates the disadvantages and shortcomings associated with the prior art techniques by providing: (1) an improved transducer assembly, e.g. slider, inductive head, magnetoresistive head, tape head, thin film head, and similar devices etc. for use with magnetic recording media, in which the transducer has improved lifetime, resistance to wear, and resistance to corrosion;
- an improved transducer assembly e.g. slider, inductive head, magnetoresistive head, tape head, thin film head, and similar devices etc. for use with magnetic recording media, in which the transducer has improved lifetime, resistance to wear, and resistance to corrosion;
- transducer assembly for use with magnetic recording media, in which the transducer has improved lifetime, resistance to wear, and resistance to corrosion;
- the ion beam deposited DLC coating protects the magnetic transducei assembly from wear and corrosion damage during normal operation and significantly extends the lifetime of the magnetic transducer system. Additionally, the method for manufacture of the ion beam deposited DLC coating substantially reduces or eliminates the disadvantages and shortcomings of prior art DLC coating methods. It is not intended by the discussion of a particular transducer assembly to limit the method of the present invention to any particular type of transducers, sliders, or tape heads. It has been unexpectedly found that the ion beam deposition process for the
- DLC coatings of the present invention produced remarkable performance on a variety of magnetic transducers and magnetic transducer assemblies such as sliders and tape heads.
- the remarkable performance compared to prior art techniques is the result of the combination of the critical features and attributes listed below.
- the method of the present invention is capable of:
- the ion beam "shape" is controlled by focusing the beam with electrostatic or magnetic fields. In this way, the beam can be efficiently delivered to the substrates to be processed, with maximum utilization. Control of ion beam current and beam energy to within 1% is routinely achieved which results in a highly repeatable and predictable rate of removal of surface residual hydrocarbons and other contaminant layers.
- the ion beam sputter-etching process is conducted in high vacuum conditions, such that oxidation or contamination of the transducer surface with residual gases in the coating system is negligible.
- the apparatus geometry can be easily configured such that the sputtered contaminants deposit on the vacuum chamber walls, and do not re-deposit onto the surface of the part as it is being sputter-etched.
- the silicon-containing layers are preferably deposited by ion beam sputter deposition immediately upon completion of the ion beam sputter-etching step to achieve maximum density and adhesion to the substrate. Deposition of the adhesion-promoting interlayers immediately upon completion of the ion beam sputter-etching step minimizes the possibility for re-contamination of the sputter-etched surface with vacuum chamber residual gases or other contaminants.
- the silicon-containing layers are selected from the group consisting of amorphous silicon, silicon oxide, silicon nitride, silicon oxy-nitride, silicon carbide, silicon carbonitride, the so-called silicon-doped DLC, mixtures thereof and chemical combinations thereof.
- Each of the silicon-containing interlayers may contain hydrogen.
- the plastic sheet substrates for this test were chosen especially for ease of determination cf the permeability of the DLC coatings to oxygen and water vapor.
- the ion beam deposited DLC coatings of the present invention are also exceedingly smooth, which produces a surface with high resistance to wear.
- Ultra-low thickness protective layers are critically important for the newest technology of ultra-high density magnetic recording media, in which the required distance between the magnetically active surface of the magnetic transducer material and the top surface of the recording medium can be as low as 100 A or less.
- the newest technology of direct contact tape heads is the most stringent example where this dimension is minimized.
- DLC coatings of different properties may be deposited on different locations of the same substrate, depending upon whether the area being coated is an electrical conductor or an electrical insulator, and the electrical connections between the substrates and the vacuum chamber.
- the lack of substrate geometry constraints of the present invention is in sharp contrast to the plasma deposition methods of the prior ?rt. (7) Having magnetic transducer assemblies fixtured for coating with ease.
- the ion beam process of the present invention can be used to apply a DLC coating to the transducer during any part of the magnetic transducer fabrication or assembly process.
- the DLC coating can be applied during fabrication of the transducer element as in U.S. Pat. Nos. 5,159,508 and 5,175,658, after fabrication of the transducer element, but before completion of the final transducer assembly, or after completion of the final transducer assembly.
- FIG.l The apparatus for carrying out the preferred embodiment form of the invention is illustrated schematically in FIG.l.
- the coating process is carried out inside a high vacuum chamber 1 which is fabricated according to techniques known in the art.
- Vacuum chamber 1 is evacuated into the high vacuum region by first pumping with a rough vacuum pump (not shown) and then by a high vacuum pump 2.
- Pump 2 can be a diffusion pump, turbomolecular pump, cryogenic pump (“cryopump”), or other high vacuum pumps known in the art.
- cryopumps with carbon adsorbents is somewhat less advantageous than other high vacuum pumps because those cryopumps have a low capacity for hydrogen which is generated by the ion beam sources used in the present invention for the deposition of DLC. The low capacity for hydrogen results in the need to frequently regenerate the adsorbent in the cryopumps.
- the process of the present invention can be carried out in a batch-type vacuum deposition system, in which the main vacuum chamber is evacuated and vented to atmosphere after processing each batch of parts; a load-locked deposition system, in which the main vacuum deposition chamber is maintained under vacuum at all times, but batches of parts to be coated are shuttled in and out of the deposition zone through vacuum-to-air load locks; or in-line processing vacuum deposition chambers in which parts are flowed constantly from atmosphere, through differential pumping zones, into the deposition chamber, back through differential pumping zones, and returned to atmospheric pressure.
- Transducer substrates to be coated are mounted on substrate holder 3, which may incorporate tilt, simple rotation, planetary motion, or combinations thereof.
- the substrate holder can be in the vertical or horizontal orientation, or at any angle in between. Vertical orientation is preferred to minimize paniculate contamination of the substrates, but if special precautions such as low turbulence vacuum pumping and careful c amber maintenance are practiced, the substrates can be mounted in the horizontal position and held in place by gravity. This horizontal mounting is advantageous from the point of view of easy fixturing of small substrates such as sliders which have just been separated from the chip. This horizontal geometry can be most easily visualized by rotating the illustration in FIG.l by 90 degrees.
- the transducer substrates Prior to deposition, are ion beam sputter-etched with an energetic ion beam generated in ion beam source 4.
- Ion beam source 4 can be any ion source known in the prior art, including Kaufman-type direct current discharge ion sources, radio frequency or microwave frequency plasma discharge ion sources, each having one, two, or three grids, or gridless ion sources such as the End Hall ion source of U.S. Pat. No. 4,862,032.
- the ion source beam is charge neutralized by introduction of electrons into the beam using a neutralizer (not shown), which may be a thermionic filament, plasma bridge, hollow cathode, or other types known in the prior art.
- Ion source 4 is provided with inlets for introduction of inert gases 5, such as argon, krypton, and xenon, for the sputter-etching, and hydrocarbon gases 6, such as methane, acetylene, and similar gas for the deposition of DLC.
- inert gases 5 such as argon, krypton, and xenon
- hydrocarbon gases 6 such as methane, acetylene, and similar gas for the deposition of DLC.
- the hydrocarbon gas can be mixed with an inert gas, and/or hydrogen or nitrogen (inlets not shown) to modify the properties of the resultant DLC coating.
- an additional ion source (not shown) can be used to co-bombard the substrates during DLC deposition to alter the film properties.
- Ion beam source 7 is also provided for ion beam sputter-deposition of interlayer materials onto the substrates.
- Ion beam source 7 is provided with inlets for operation on inert gases 8, such as argon, krypton, and xenon, and for reactive gases 9, such as nitrogen and oxygen.
- the ion beam from source 7 is directed onto a sputtering target 10, which can be silicon, silicon nitride, or silicon carbide.
- a silicon target is preferable.
- Reactive gases such as nitrogen, oxygen, and methane can be introduced into the vacuum chamber background during the reactive sputter deposition of the silicon nitride, silicon carbide, and silicon oxynitride to react with the depositing layer and modify its stoichiometry and properties.
- the surface of the magnetic transducer substrate is first chemically cleaned to remove contaminants.
- Ultrasonic cleaning in solvents, or other detergents as known in the art is often effective; details of the cleaning depend upon the nature of the contamination and residue remaining on the part after lapping and handling. It has been found that it is critical for this step to be effective in removing surface contaminants and residues, or the resulting adhesion of the DLC coating will be poor. This is because in many transducer designs, only a very small amount, e.g. ⁇ 100 A, of surface material can be removed during the subsequent in-vacuum cleaning by ion beam sputter-etching step in order to minimize pole recession.
- the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated.
- the vacuum chamber is evacuated to a pressure of about 1 x 10 "5 Torr or less to ensure removal of water vapor and other contaminants from the vacuum system.
- the required level of vacuum which must be attained prior to initiating the next step must be determined by experimentation. The exact level of vacuum is dependent upon the nature of the substrate material, the sputter-etching rate, the constituents present in the vacuum chamber residual gas, and the details of the adhesion-promoting interlayer.
- the substrate surface is bombarded with energetic gas ions to assist in the removal of residual contaminants, e.g. any residual hydrocarbons, surface oxides and other contaminants, and to activate the surface.
- This sputter-etching of the transducer substrate surface is required to achieve high adhesion of interlayer.
- the sputter-etching can be carried out with inert gases such as argon, krypton, and xenon. Additionally, hydrogen may be added to the ion beam to assist in activation of the surface.
- the ion beam energy is greater than 20 eV. Ion energies as high as 2000 eV can be used, but ion beam energies in the range of about 20 to about 500 eV result in the least amount of atomic scale damage to the transducer substrate.
- a silicon-containing interlayer material is deposited. It has been found that deposition of interlayer materials which contain silicon atoms onto the substrate prior to deposition of the DLC layer results in highly adherent DLC coatings with outstanding wear resistance properties. It is currently believed that reaction between silicon atoms in the interlayer material and the carbon atoms in the DLC layer is essential for the DLC coating to exhibit excellent adhesion.
- the thickness of the silicon-containing interlayer can be in the range of about 10 A to about 500 A in thickness. However, in order to provide the minimum spacing between the magnetic transducer and the magnetic recording medium, thinner layers, e.g. about 10 A to about 50 A, are preferred.
- the silicon-containing interlayer can be deposited by a variety of processes, including magnetron sputtering, plasma deposition, direct ion beam deposition, or ion beam sputter deposition.
- the silicon-containing interlayer is preferably deposited by either direct ion beam deposition, or ion beam sputter deposition.
- Direct ion beam deposition of interlayers containing silicon and one or more of the elements hydrogen, oxygen, carbon, and nitrogen can be performed by operating ion source 4 on gases which contain these elements.
- ion source 4 can be operated on diethylsilane gas to produce an interlayer containing silicon, carbon, and hydrogen. It is believed that the ion beam sputter deposition process produces silicon interlayers or interlayers containing silicon and one or more of the elements hydrogen, oxygen, carbon, and nitrogen with high density and improved adhesion to the underlying transducer substrate due to the high energy ion bombardment associated with this process.
- Examples of these electrically non-conducting silicon-containing layers include silicon carbide, silicon nitride, silicon oxide, and silicon oxy-nitride, and mixtures thereof and chemical combinations thereof, such as “silicon carbonitride”.
- silicon carbide it is meant to include materials which are composed of the elements silicon and carbon, and possibly hydrogen. Stoichiometric and non-stoichiometric amounts of silicon and carbon are included in the definition of this silicon carbide material.
- silicon nitride it is meant to include materials which are composed of the elements silicon and nitrogen, and possibly hydrogen. Stoichiometric and non-stoichiometric amounts of silicon and nitrogen are included in the definition of this silicon nitride material.
- silicon oxide it is meant to include materials which are composed of the elements silicon and oxygen, and possibly hydrogen.
- the definition of silicon oxide includes only materials which have a higher atomic concentration of silicon than does silicon dioxide, SiO 2 . It was found that attempts to use a sputtered silicon dioxide interlayer produced a DLC coating with poor adhesion. It is believed that a silicon oxide material having excess silicon atoms which are not fully bonded to oxygen is required to produce a DLC coating on magnetic transducers with optimum adhesion.
- silicon oxy-nitride it is meant to include materials which are composed of the elements silicon, oxygen, and nitrogen, and possibly hydrogen. Materials falling under the chemical formula SiO x N y H z are considered to be within the definition of this silicon oxy-nitride material.
- a diamond-like carbon top layer is deposited by ion beam deposition. It is important to minimize the time between completion of the silicon-containing interlayer, and the start of the deposition of the DLC layer. Deposition of the DLC layer immediately after completion of the interlayer deposition step minimizes the possibility for re-contamination of the interlayer surface with vacuum chamber residual gases or other contaminants.
- the thickness of the protective ion beam deposited DLC coating is constrained to small dimensions since the coating thickness adds directly to the spacing between the magnetic transducer and the magnetic recording medium. Depending on the design and operation of the transducer, the DLC coating thickness is typically in the range of about 25 A to about 2,000 A.
- Thicker DLC layers are generally preferable in terms of providing increased protection against wear and corrosion, although outstanding wear and corrosion resistance is also obtained by ion beam deposited DLC coatings at the low end of this thickness range.
- the actual thickness of the ion beam deposited DLC layer is chosen in practice based on the maximum allowable increase in spacing between the magnetic transducer and the magnetic recording medium.
- ion beam deposition methods may be used for the formation of the DLC coatings of the present invention, including direct ion beam deposition, direct ion beam deposition with ion assist, i.e. "direct dual ion beam deposition", ion beam sputter deposition from a carbon target, and ion beam sputter deposition with ion assist, i.e. "dual ion beam sputter deposition”.
- the ion beam sputter deposition methods offer excellent control, uniformity, and flexibility of substrate geometry, but the deposition rate is slower than that of the direct ion beam deposition process.
- ion assist ion assist
- Filtered carbon cathodic arc ion sources and laser ablation (from a solid carbon target) icn sources can also be used as ion sources for generation of the carbon deposition flux for the DLC coatings of the method of the present invention.
- These ion sources produce extremely hard diamond-like carbon coatings with very low hydrogen content.
- the coating stress level is high, so extreme care in substrate chemical cleaning, ion beam pre-cleaning, and interlayer deposition must be taken to obtain excellent coating adhesion.
- ion beam deposition from a hydrocarbon gas source is the most preferred deposition process for this invention.
- Methane as the hydrocarbon source gas is preferred, but other hydrocarbon gases, such as acetylene, butane, and benzene can be used as well.
- Inert gases and hydrogen may be introduced into the ion source plasma to modify the DLC film properties.
- the ion energy used in the DLC deposition process may be in the range of approximately 20 eV to approximately 1000 eV. Ion energies in the range of about 20 eV to about 300 eV are most preferred to minimize heating of the substrate during deposition.
- the deposition process on the transducer substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated magnetic transducer substrates are removed from the vacuum chamber.
- Example 1 An A O TiC slider (IBM 3380-type) was coated with ion beam deposited DLC by the following method.
- the sliders already mounted onto their suspension system were first chemically cleaned with isopropanol and blown dry with nitrogen.
- the cleaned sliders were then attached to a 6-inch diameter graphite plate using adhesive tape.
- the graphite plate was then mounted onto a rotary stage, and the vacuum chamber was evacuated to a pressure of 4.8 x 10 "6 Torr.
- the slider was then sputter-etched using an argon ion beam from an 11 cm Kaufman-type ion source at an energy of 500 eV with a beam current of 137 mA for 2 minutes.
- the etch rate of a silicon witness coupon under these conditions was approximately 300 A/minute.
- a 1000 eV, 100 mA argon ion beam was used to sputter-deposit a 25 A thick layer of silicon by ion beam sputter deposition from a silicon target.
- a 100 A thick DLC layer was deposited by direct ion beam deposition using the 11 cm Kaufman-type ion source, operated at a beam energy of 75 eV and a beam current of 175 mA.
- Example 2 An Al 2 O/ ⁇ C slider (IBM 3380-type) was coated with ion beam deposited DLC by the same procedure as in Example 1, except the vacuum chamber was initially was evacuated to a pressure of 5.0 x 10 "6 Torr, and the thickness of the DLC coating was 50 A.
- Example 3 A magnetoresistive tape head was chemically cleaned, and mounted in an aluminum fixture. The fixture was installed in a stainless steel vacuum chamber and the chamber was evacuated to a pressure of 3.0 x 10 "6 Torr. The tape head was then sputter-etched using an argon ion beam from an 11 cm Kaufman-type ion source at an energy of 500 eV with a beam current of 137 mA for 15 seconds. The etch rate of a silicon witness coupon under these conditions was approximately 300 A/minute.
- a 1500 eV, 50 mA nitrogen ion beam was used to sputter-deposit a 25 A thick layer of silicon nitride by reactive ion beam sputter deposition from a silicon target.
- a 225 A thick DLC layer was deposited by direct ion beam deposition using the 11 cm Kaufman-type ion source, operated at a beam energy of 75 eV and a beam current of 50 mA.
- Example 4 Analog tape heads were cleaned with isopropanol and then blown dry with nitrogen gas. The samples were mounted in an aluminum fixture and the fixture was installed into a stainless steel vacuum chamber which was evacuated to a pressure of 4.6 x 10 "6 Torr. The tape heads were then sputter-etched for one minute using a 500 eV, 137 mA argon ion beam generated by an 11 cm Kaufman type ion source. The etch rate of a silicon witness coupon under these conditions was approximately 300 A/minute.
- a 1000 eV, 100 mA argon ion beam was used to sputter-deposit a 200 A thick layer of amorphous silicon by ion beam sputter deposition from a silicon target.
- a 1200 A thick DLC layer was deposited onto the tape heads by direct ion beam deposition using the 11 cm Kaufman-type ion source, operated at a beam energy of 75 eV and a beam current of 100 mA.
- the durability of the ion beam deposited DLC coating of the present invention was demonstrated by applying the coating to A ⁇ O TiC sliders used as transducers with magnetic recording disks.
- the outstanding durability and performance enhancements due to the DLC coating of the present invention were determined by performing two types of accelerated wear tests: a constant speed drag test, and a contact-start-stop (CSS) test.
- the CSS test is used by the magnetic disk recording industry as the ANSI standard method.
- a typical mode of failure in the tests is build-up of friction with revolutions of drag or cycles of CSS. For uncoated sliders, the friction starts at a coefficient level of approximately 0.2 and builds up to three or four times that initial value with several thousand cycles.
- Tests were conducted in a class 100 clean hood in room air at 28°C and 35% relative humidity. Standard commercially available 95 mm diameter thin film disks with a 200-300 A thick layer amorphous carbon and a 20 A thick layer of lubricant were used in the tests.
- TDV touch-down velocity
- the tester was programmed to perform either slow speed drag tests or CSS tests while taking one-revolution friction data periodically, at 100 cycle intervals. These data are averaged, and the result is plotted as a function of revolutions along with the TDV.
- An example of drag test data for an uncoated IBM 3380-type Al 2 O 3 -TiC slider is presented in FIG. 2A, and 2B, and an example of CSS test data for an uncoated IBM 3380-type Al 2 O 3 - TiC slider is presented in FIG. 2C and 2D.
- the frictional force started at 2.07 gmf and increased with the number of test revolutions to a value near 5 gmf at 800 revolutions. Then, it remained nearly constant until increasing to a maximum of 6 gmf at approximately 2600 revolutions. The test was stopped at 3300 revolutions when the TDV showed two consecutive values 50% above the lowest value, a criterion chosen to maximize the accuracy of the determination of contamination on the sliders by wear products. An increase of TDV is an indication that material has transferred from the disk to the slider.
- the frictional force started at 1.93 gmf and increased to 5.2 gmf at approximately 300 start/stops.
- FIG. 3A and FIG. 3B show the drag test results for a slider coated with 100 A of DLC in Example 1. The test result is substantially different and improved relative to the uncoated sliders.
- the frictional force rapidly increased from 1.61 gmf to about 3.2 gmf and remained essentially constant for 30,000 revolutions.
- FIG. 3 A the frictional force rapidly increased from 1.61 gmf to about 3.2 gmf and remained essentially constant for 30,000 revolutions.
- the TDV decreased from 3.51 meters/second to 2.8 m/s and remained essentially constant for the duration of the test. After 30,000 cycles was completed, only a small amount of wear material was found on one rail of the slider. The rails were much cleaner than was the case for the tests of the uncoated sliders.
- FIG. 4A and FIG. 4B show the drag test results for a slider coated with 50 A of DLC in Example 2.
- the test results were nearly identical to those found in FIG. 3A and FIG. 3B for the slider coated with 100 A of DLC in Example 1. Again, there was only a very small amount of debris found on the rails of the slider for this test. The rails were much cleaner than was the case for the tests of the uncoated sliders.
- FIG. 2C and FIG. 2D show the results of a CSS test for an uncoated
- FIG. 5A and FIG. 5B show the results of CSS tests on the same slider (100 A DLC coating) used to obtain the data in FIG. 3 A and FIG. 3B.
- the data show that the frictional force increased rapidly from 1.77 gmf to approximately 3.3 gmf and remained essentially constant for 8,000 CSS cycles.
- the TDV showed only one instance of an increase, but otherwise showed a gradual decrease over the duration of the test.
- the uncoated sliders showed an increase of frictional force to 6 gmf by 1,000 cycles for three tests which were conducted.
- the frictional force did not increase above 3.4 gmf at any time up to the point the test was terminated at 8,000 cycles.
- doubling of the initial frictional force from 2 gmf to 4 gmf is set as the failure criterion, all of the uncoated sliders failed by 200 CSS cycles, whereas the ion beam DLC-coated slider did not yet fail by 8,000 cycles. Therefore, a factor of improvement of greater than 40 for the ion beam DLC-coated sliders was indicated by the CSS tests.
- the present invention provides an improved method for producing highly protective and wear resistant DLC coatings on magnetic transducers.
- Highly important technical advantages of the method of the present invention include outstanding adhesion of the ion beam deposited DLC coating, and ease and flexibility of mass production of DLC-coated magnetic transducers.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
- Magnetic Record Carriers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP95913562A EP0804630A4 (de) | 1994-03-03 | 1995-03-01 | Diamantartige kohlenstoffbehandelte sensoren für magnetische aufzeichnungsmedien |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20570194A | 1994-03-03 | 1994-03-03 | |
US08/205,701 | 1994-03-03 |
Publications (1)
Publication Number | Publication Date |
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WO1995023878A1 true WO1995023878A1 (en) | 1995-09-08 |
Family
ID=22763287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1995/002760 WO1995023878A1 (en) | 1994-03-03 | 1995-03-01 | Diamond-like carbon coated transducers for magnetic recording media |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0804630A4 (de) |
CA (1) | CA2184737A1 (de) |
WO (1) | WO1995023878A1 (de) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2305440A (en) * | 1995-09-25 | 1997-04-09 | Marconi Gec Ltd | Depositing multiple layer optical coatings using an ion beam source and atom sources |
FR2741470A1 (fr) * | 1995-11-22 | 1997-05-23 | Commissariat Energie Atomique | Procede de realisation d'une tete magnetique planaire et tete obtenue par ce procede |
FR2754933A1 (fr) * | 1996-10-23 | 1998-04-24 | Schneider Electric Sa | Relais de declenchement electromagnetique a revetement de carbone amorphe, et son procede de fabrication |
US6322880B1 (en) * | 1998-09-28 | 2001-11-27 | Seagate Technology Llc | Magneto-resistance recording media comprising a foundation layer and a C-overcoat |
US6517956B1 (en) * | 1999-05-03 | 2003-02-11 | Seagate Technology Llc | Magneto-resistance recording media comprising aluminum nitride corrosion barrier layer and a c-overcoat |
US6885526B2 (en) * | 2000-04-13 | 2005-04-26 | Alps Electric Co., Ltd. | Thin film magnetic head comprising SiON film |
EP1657323A1 (de) * | 2004-11-12 | 2006-05-17 | Kabushiki Kaisha Kobe Seiko Sho | Gleitelement mit hervorragender Verschleissresistenz in feuchter Umgebung |
CN100370521C (zh) * | 2004-04-23 | 2008-02-20 | 新科实业有限公司 | 薄膜磁头及制造方法,具有薄膜磁头的万向架组件和磁盘装置 |
US7369357B2 (en) | 2004-08-31 | 2008-05-06 | Kabushiki Kaisha Toshiba | Magnetic head, head suspension assembly, magnetic reproduction apparatus, and method of manufacturing magnetic head |
US7402350B2 (en) | 1996-05-31 | 2008-07-22 | Stormedia Texas, Llc | Highly tetrahedral amorphous carbon coatings and systems and methods for their production |
WO2009083193A2 (en) * | 2007-12-28 | 2009-07-09 | Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts | Method and apparatus for surface treatment by combined particle irradiation |
US7629200B2 (en) | 2001-08-21 | 2009-12-08 | Sony Corporation | Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film |
JP2013033585A (ja) * | 2011-08-02 | 2013-02-14 | Hgst Netherlands B V | 軟質中間膜を備えた空気ベアリング面オーバーコートおよびその製造方法 |
US8815060B2 (en) | 2004-08-30 | 2014-08-26 | HGST Netherlands B.V. | Method for minimizing magnetically dead interfacial layer during COC process |
CN107083536A (zh) * | 2017-04-24 | 2017-08-22 | 信利光电股份有限公司 | 一种类金刚石复合薄膜及其制备方法 |
CN111560592A (zh) * | 2020-06-16 | 2020-08-21 | 中国科学院宁波材料技术与工程研究所 | 一种长效耐磨防雾镜片涂层及其制备方法与应用 |
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- 1995-03-01 EP EP95913562A patent/EP0804630A4/de not_active Withdrawn
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US5159508A (en) * | 1990-12-27 | 1992-10-27 | International Business Machines Corporation | Magnetic head slider having a protective coating thereon |
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Cited By (28)
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GB2305440A (en) * | 1995-09-25 | 1997-04-09 | Marconi Gec Ltd | Depositing multiple layer optical coatings using an ion beam source and atom sources |
FR2741470A1 (fr) * | 1995-11-22 | 1997-05-23 | Commissariat Energie Atomique | Procede de realisation d'une tete magnetique planaire et tete obtenue par ce procede |
EP0775997A1 (de) * | 1995-11-22 | 1997-05-28 | Commissariat A L'energie Atomique | Herstellungsverfahren eines planaren Magnetkopfes und nach diesem Verfahren hergestellter Kopf |
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US7513215B2 (en) | 1996-05-31 | 2009-04-07 | Stormedia Texas, Llc | Systems and methods for the production of highly tetrahedral amorphous carbon coatings |
FR2754933A1 (fr) * | 1996-10-23 | 1998-04-24 | Schneider Electric Sa | Relais de declenchement electromagnetique a revetement de carbone amorphe, et son procede de fabrication |
EP0838830A1 (de) * | 1996-10-23 | 1998-04-29 | Schneider Electric Sa | Elektromagnetischen Auslöser mit einer amorphen Kohlenstoffbeschichtung und sein Fertigungsverfahren |
US6322880B1 (en) * | 1998-09-28 | 2001-11-27 | Seagate Technology Llc | Magneto-resistance recording media comprising a foundation layer and a C-overcoat |
US6517956B1 (en) * | 1999-05-03 | 2003-02-11 | Seagate Technology Llc | Magneto-resistance recording media comprising aluminum nitride corrosion barrier layer and a c-overcoat |
US6885526B2 (en) * | 2000-04-13 | 2005-04-26 | Alps Electric Co., Ltd. | Thin film magnetic head comprising SiON film |
US7629200B2 (en) | 2001-08-21 | 2009-12-08 | Sony Corporation | Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film |
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US8815060B2 (en) | 2004-08-30 | 2014-08-26 | HGST Netherlands B.V. | Method for minimizing magnetically dead interfacial layer during COC process |
US7369357B2 (en) | 2004-08-31 | 2008-05-06 | Kabushiki Kaisha Toshiba | Magnetic head, head suspension assembly, magnetic reproduction apparatus, and method of manufacturing magnetic head |
EP1657323A1 (de) * | 2004-11-12 | 2006-05-17 | Kabushiki Kaisha Kobe Seiko Sho | Gleitelement mit hervorragender Verschleissresistenz in feuchter Umgebung |
US7498083B2 (en) | 2004-11-12 | 2009-03-03 | Kabushiki Kaisha Kobe Seiko Sho | Sliding member with excellent wear resistance in water-based environments |
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US8472134B2 (en) | 2011-08-02 | 2013-06-25 | HGST Netherlands B.V. | Air bearing surface overcoat with soft intermediate film, and methods of producing the same |
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Also Published As
Publication number | Publication date |
---|---|
CA2184737A1 (en) | 1995-09-08 |
EP0804630A4 (de) | 1998-06-10 |
EP0804630A1 (de) | 1997-11-05 |
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