WO1994021110A2 - Utilisation d'oxydes monocristallins dopes et durs dans les dispositifs appeles a etre mis au contact de fluides abrasifs - Google Patents

Utilisation d'oxydes monocristallins dopes et durs dans les dispositifs appeles a etre mis au contact de fluides abrasifs Download PDF

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Publication number
WO1994021110A2
WO1994021110A2 PCT/EP1994/000898 EP9400898W WO9421110A2 WO 1994021110 A2 WO1994021110 A2 WO 1994021110A2 EP 9400898 W EP9400898 W EP 9400898W WO 9421110 A2 WO9421110 A2 WO 9421110A2
Authority
WO
WIPO (PCT)
Prior art keywords
use according
fluid
doped
dopant
sapphire
Prior art date
Application number
PCT/EP1994/000898
Other languages
English (en)
Other versions
WO1994021110A3 (fr
Inventor
Peter Hermann Wilhelm Droste
Original Assignee
Akzo Nobel N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Akzo Nobel N.V. filed Critical Akzo Nobel N.V.
Publication of WO1994021110A2 publication Critical patent/WO1994021110A2/fr
Publication of WO1994021110A3 publication Critical patent/WO1994021110A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01J—MANUFACTURE OF DAIRY PRODUCTS
    • A01J11/00—Apparatus for treating milk
    • A01J11/16—Homogenising milk
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
    • B01F25/25—Mixing by jets impinging against collision plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/44—Mixers in which the components are pressed through slits
    • B01F25/441—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits
    • B01F25/4412—Mixers in which the components are pressed through slits characterised by the configuration of the surfaces forming the slits the slits being formed between opposed planar surfaces, e.g. pushed again each other by springs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F2025/91—Direction of flow or arrangement of feed and discharge openings
    • B01F2025/912—Radial flow
    • B01F2025/9121—Radial flow from the center to the circumference, i.e. centrifugal flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F2101/00—Mixing characterised by the nature of the mixed materials or by the application field
    • B01F2101/06—Mixing of food ingredients
    • B01F2101/07—Mixing ingredients into milk or cream, e.g. aerating

Definitions

  • the invention pertains to devices that are to be contacted with fluid abrasives, i.e., with gases or liquids, under such conditions as lead to abrasive working shear forces.
  • nozzles and targets employed in conjunction therewith
  • dairy products such as milk and drinking chocolate.
  • Constructive materials currently used for milk-homogenization nozzles include tungsten, tungsten carbide, and boron nitride. While these are relatively wear-resistant materials, in practice the nozzles, and particularly the targets, have to be replaced afer approximately one or two days of operation, or even earlier. This is caused by the abrasive action of the fluid, which is probably due to the high pressure involved (about 200 Bar) and the presence in the fluid of solids such as lactose crystals. Cocoa particles display a similar abrasive effect. A substantial increase in nozzle life is desired.
  • NL 7810916 (Agritronic) an apparatus is disclosed for homogenizing liquid mixtures such as milk.
  • the disclosure confirms the desire that nozzles should be wear-resistant, and refers to the form of a sapphire ball in a ceramic seat.
  • EP 507 511 discloses an apparatus for processing a liquid substance which comprises a ceramic valve.
  • DE 3 133944 pertains to a nozzle having a certain hardness, made from metal1 alloys.
  • JP 57/103 765 a nozzle is taught having an improved term of life made from a single crystal of high hardness and high melting point, e.g. ruby, sapphire, alumina.
  • the invention consists in that the constructive material of devices to be contacted with fluid abrasives is a monocrystalline oxide having a Mohs hardness of at least 7, such as sapphire, comprising an effective amount of a dopant selected from the elements 22 through 28.
  • the monocrystalline oxides selected display sufficient hardness in themselves so as to allow them to be rendered into a material meeting the object of the invention.
  • a minimum requirement in this respect being a Mohs hardness of at least 7, the monocrystalline oxides are preferably selected from the group consisting of AI2O3, MgAl ⁇ 3, Zr ⁇ 2, Y2 ⁇ 3» anc - Y °3-G a 2 ⁇ 3- Among these oxides AI2O3 and Z >2 are preferred.
  • the dopants all elements are suitable by which oxides can be hardened in at least one particular direction (mostly along the crystal's main axis). More particularly, in order to attain the desired surface hardness, the dopants should be able to generate controllable stress in the crystal lattice and/or to enhance the crystal lattice energy and/or to neutralize crystal lattice defects. This requirement is generally satisfied by the elements 22-28, i.e., titanium, vanadium, chromium, manganese, iron, cobalt, and nickel. As a result of the doping the lattice constant will change. Generally, the crystal lattice will become denser and/or dopant atoms will be substituted for defects.
  • a minimum viable content generally is of the order of a few parts per million, say 5 wt. ppm.
  • atomic coordination and ion radius data the man skilled in the art can calculate the maximum content of any particular dopant that can be incorporated into any particular monocrystalline oxide. For example, into Al2O3 a maximum of 0.30 wt% titanium can be incorporated, while for Zr ⁇ 2 the maximum is 7.5 wt%.
  • Combinations of dopants can also be viably used. This may lead to the possibility of increasing the dopant content. Such is the case with Ti-Mn doped sapphire, where the presence of about 100 wt. ppm manganese makes it possible to incorporate 0.55 wt% titanium. If combinations of dopants are employed one can also combine a dopant selected from the elements 22-28 with a dopant outside this range. A good example is the favourable material obtained when zirconium oxide is doped with chromium and cerium.
  • the instant monocrystalline oxides and their possible dopants are known in the art, and are known to have such desirable properties as hardness.
  • the invention resides in the unexpected improvements that can be achieved by using these known materials in devices that are subject to contact with fluid abrasives. While the main advantage resides in the substantially slower wearing-off process, hence enhanced lifetime of those devices, an additional advantage is that in many cases the wearing-off is also more uniform. For example, in the case of nozzles that are used for spraying in a defined direction, such as water-jet tools, non-uniform wear represents a problem causing frequent replacement of nozzles. Nozzles in accordance with the invention surprisingly display uniform wear. This adds to the lifetime enhancement already achieved by the selected material's resistance to abasive shear, for wear does not, as it does with the current materials, lead to beam widening or deflection and consequent uselessness of the nozzle.
  • the doped monocrystalline oxides that are employed in the present invention can be produced in a known manner.
  • the preferred crystal growth processes differ per individual oxide.
  • Viable crystal growth methods to produce monocrystals are known to the man skilled in the art and include the Verneuil process, the Czochralsky method, and the horizontal and vertical Bridgman techniques.
  • doped Al2O3 monocrystals can be advantageously prepared by means of Verneuil or Czochralsky methods
  • Zr ⁇ 2 monocrystals can be prepared by skull- melting
  • MgA103, Y2O3, and Y2 ⁇ 3.Ga2U3 again by Verneuil methods.
  • a preferred material is titanium-doped sapphire.
  • Ti-doped sapphire obtained by means of a Verneuil (flame fusion crystal growth) process. This known process involves the melting together of titanium and alumina powder using an oxy-hydrogen flame, after which the melt is deposited onto a highly pure seed crystal of Al2O3. More preferably, the material is obtained by a computer controlled automated flame fusion crystal growth process conducted in a vibration-free, well insulated, and mechanically sound oven. This process has been described in Mitte ⁇ ungsblatt Nr.41/Apr ⁇ 1988, pages 33-39, of the Deutsche Deutschen Deutschen f ⁇ r Kristallwachstum und Kristallzuchtung e.V. The resulting crystals are of high quality (i.e. having very few defects - of the order of 100/cm 2 ). The Ti-content in the preferred single crystal is about 25 wt. ppm. This preferred process leads to a controlled formation of a laminar three-dimensional crystal structure.
  • the unexpected advantages of the present invention apply to all those uses where a material is contacted with gases or liquids containing abrasive solids (i.e. fluid abrasives) under conditions as will lead to the fluid abrasive exerting shear forces on the material.
  • gases or liquids containing abrasive solids i.e. fluid abrasives
  • Possible uses according to the invention include the above-referenced nozzles and/or targets for the homogenization of dairy products or chocolate. More specifically, it can be stated that the nozzles and targets according to the invention proved particularly advantageous in the homogenization of milk containing additives such as cocoa or lactose crystals.
  • the monocrystalline crystals hardened by doping according to the invention therefore are preferably used for making nozzles employed in the homogenization of full-cream milk, low-fat milk, lactose-enriched milk, drinking chocolate, or other flavoured milk (e.g. hazelnut, strawberry).
  • the materials according to the invention are surprisingly suitable for the manufacture of waterjet tools, such as knives which employ high impact water beams, more particularly a boron nitride-containing mixture of water and glycol, as a cutting device.
  • a monocrystalline material in accordance with the invention was obtained by means of the automated Verneuil process referred to above.
  • the material thus produced was used in a device as indicated in the schematic drawing (FIG. 1).
  • the drawing displays the relevant parts of the homogenization device in cross-section.
  • the reference signs are allocated as follows:
  • the fluid to be homogenized (1) is pressed through a nozzle (2) that is fixed in a holder (3) and is sprayed in the direction of a target (4) fixed in a holder (5).
  • a target (4) fixed in a holder (5).
  • the sprayed fluid hits the target, it passes through an opening (indicated by arrows 6).
  • the width of the opening is directly proportional to the pressure applied to the nozzle.
  • the fluid thus becomes finely divided and is further processed in the homogenizer device (this is not relevant to the present invention and therefore is not further indicated here) .
  • the nozzle (2) and the target (4) are shaped from the above-mentioned doped monocrystalline material.
  • Most other parts of the device are made of stainless steel.
  • the device was employed in a dairy factory under regular conditions, i.e. a pressure of 200 bar and a temperature of 140°C, and was used for the homogenization of drinking chocolate (i.e. incorporating cocoa particles) .

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Animal Husbandry (AREA)
  • Environmental Sciences (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lubricants (AREA)

Abstract

Préparation, à partir de cristaux de saphir dopés au titane et d'autres oxydes monocristallins présentant une dureté d'au moins 7 sur l'échelle de Mohs et comportant une quantité efficace d'un dopant sélectionné parmi les éléments (22 à 28), de dispositifs présentant une résistance à l'usure étonnamment bonne lorsqu'on les met en contact avec des fluides abrasifs. Ces dispositfs sont, par exemple, les buses utilisées dans l'homogénéisation de produits laitiers, ou les outils à jet d'eau.
PCT/EP1994/000898 1993-03-22 1994-03-17 Utilisation d'oxydes monocristallins dopes et durs dans les dispositifs appeles a etre mis au contact de fluides abrasifs WO1994021110A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP93200828 1993-03-22
EP93200828.7 1993-03-22

Publications (2)

Publication Number Publication Date
WO1994021110A2 true WO1994021110A2 (fr) 1994-09-29
WO1994021110A3 WO1994021110A3 (fr) 1996-09-19

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PCT/EP1994/000898 WO1994021110A2 (fr) 1993-03-22 1994-03-17 Utilisation d'oxydes monocristallins dopes et durs dans les dispositifs appeles a etre mis au contact de fluides abrasifs

Country Status (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999044413A1 (fr) * 1998-03-02 1999-09-10 Foss Electric A/S Procede et appareil d'homogeneisation d'un liquide

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2471437A (en) * 1945-04-19 1949-05-31 Elgin Nat Watch Co Method and apparatus for producing sapphire hollow articles
US4106975A (en) * 1977-06-30 1978-08-15 International Business Machines Corporation Process for etching holes
NL7810916A (nl) * 1978-11-02 1980-05-07 Agritronic B V Inrichting voor het homogeniseren van vloeibare mengsels, bijvoorbeeld melk.
JPS57103765A (en) * 1980-12-19 1982-06-28 Seiko Instr & Electronics Ltd Single crystal nozzle for molten metal
DE3133944A1 (de) * 1981-08-24 1983-03-03 Gebrüder Sulzer AG, 8401 Winterthur "brennstoff-einspritzduese, insbesondere fuer dieselmotoren"
EP0098724A1 (fr) * 1982-06-25 1984-01-18 Sumitomo Chemical Company, Limited Fabrication de monocristaux
DE3728946A1 (de) * 1987-08-29 1989-03-09 Bran & Luebbe Homogenisiervorrichtung
US5033681A (en) * 1990-05-10 1991-07-23 Ingersoll-Rand Company Ion implantation for fluid nozzle
EP0507011A1 (fr) * 1991-04-04 1992-10-07 Hoogovens Industrial Ceramics B.V. Dispositif pour le traitement de produits liquides

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2471437A (en) * 1945-04-19 1949-05-31 Elgin Nat Watch Co Method and apparatus for producing sapphire hollow articles
US4106975A (en) * 1977-06-30 1978-08-15 International Business Machines Corporation Process for etching holes
NL7810916A (nl) * 1978-11-02 1980-05-07 Agritronic B V Inrichting voor het homogeniseren van vloeibare mengsels, bijvoorbeeld melk.
JPS57103765A (en) * 1980-12-19 1982-06-28 Seiko Instr & Electronics Ltd Single crystal nozzle for molten metal
DE3133944A1 (de) * 1981-08-24 1983-03-03 Gebrüder Sulzer AG, 8401 Winterthur "brennstoff-einspritzduese, insbesondere fuer dieselmotoren"
EP0098724A1 (fr) * 1982-06-25 1984-01-18 Sumitomo Chemical Company, Limited Fabrication de monocristaux
DE3728946A1 (de) * 1987-08-29 1989-03-09 Bran & Luebbe Homogenisiervorrichtung
US5033681A (en) * 1990-05-10 1991-07-23 Ingersoll-Rand Company Ion implantation for fluid nozzle
EP0507011A1 (fr) * 1991-04-04 1992-10-07 Hoogovens Industrial Ceramics B.V. Dispositif pour le traitement de produits liquides

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KRISTALL UND TECHNIK, vol.14, no.7, 1979 pages 783 - 795 GOSCINSKA 'influence of chromium and titanium...' cited in the application *
PATENT ABSTRACTS OF JAPAN vol. 6, no. 196 (M-161) 5 January 1982 & JP,A,57 103 765 (SEIKO INSTR & ELECTRONICS LTD) 28 June 1982 cited in the application *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999044413A1 (fr) * 1998-03-02 1999-09-10 Foss Electric A/S Procede et appareil d'homogeneisation d'un liquide

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Publication number Publication date
WO1994021110A3 (fr) 1996-09-19

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