WO1993011609A1 - Switchable polarity bipolar generator with galvanic isolation - Google Patents

Switchable polarity bipolar generator with galvanic isolation Download PDF

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Publication number
WO1993011609A1
WO1993011609A1 PCT/FR1992/001109 FR9201109W WO9311609A1 WO 1993011609 A1 WO1993011609 A1 WO 1993011609A1 FR 9201109 W FR9201109 W FR 9201109W WO 9311609 A1 WO9311609 A1 WO 9311609A1
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WO
WIPO (PCT)
Prior art keywords
positive
negative
transformer
train
pulses
Prior art date
Application number
PCT/FR1992/001109
Other languages
French (fr)
Inventor
Thierry Rahban
Original Assignee
Thierry Rahban
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thierry Rahban filed Critical Thierry Rahban
Publication of WO1993011609A1 publication Critical patent/WO1993011609A1/en

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling

Definitions

  • the present invention relates to bipolar voltage generators with galvanic isolation ensuring in particular the control of power semiconductors.
  • Certain electronic and electrotechnical applications require a galvanically isolated generator supplying a successively positive and negative voltage, of possibly unequal amplitude and duration. This is the case for example of the control of high voltage power switches, characterized by high transient powers.
  • Piezoelectric or photoelectric converters rarely respond to this problem because they are currently too limited in power.
  • the conventional solution consists in using an optical coupler followed by a power interface, the energy being supplied by a transformer as a rectifier bridge.
  • This arrangement has several drawbacks: it doubles the critical isolation paths, the optical coupler has low immunity against rapid voltage gradients, finally, a certain complexity handicaps reliability.
  • French patent 2556905 proposes to transmit the necessary energy magnetically and the voltage polarity information. But then either two transformers, or only one having many isolated windings, which increases the manufacturing cost.
  • Other solutions employing only one transformer with two windings have been proposed recently, but they are still complex and do not easily provide a negative output.
  • the invention aims to generate a galvanically isolated voltage, negative or positive depending on the order, using a single transformer with two isolated windings and very few other components.
  • This problem is resolved by sending through the transformer two types of bipolar signals having different waveforms, this difference being detected at the transformer secondary to control the polarity of the voltage to be generated.
  • the detection is done on the voltage of the pulses, rather than on their duration, to obtain a more reliable discriminating assembly.
  • the circuit then advantageously becomes simple, its single transformer supporting more strong common mode voltage gradients.
  • FIG. 2 shows an example of an oscillogram taken at different points in Figure 1.
  • the indications "on” and “off” indicate that the corresponding switches are closed and open respectively.
  • FIG. 3 shows a receiver circuit equipped with so-called "MOSFETs” transistors, with an insulated gate field effect.
  • - Figure 4 shows a variant of receiver circuit equipped with NPN bipolar transistors.
  • - Figure 5 shows a transmitter circuit sharing the same 5-volt supply as the logic circuits.
  • the invention requires providing through an isolation transformer 30 a Vc-Vd signal comprising two types of pulse trains differentiated by their voltage levels.
  • This difference which appears in FIG. 2, consists in that the amplitude of the positive and negative impulses of the first train (generated when the switch 9 is closed) is respectively significantly greater and significantly less than that of positive and negative pulses of the second train generated when the switch 8 is closed, the DC component remaining zero at each period to reduce the magnetizing current.
  • FIG. 1 An example of a transmitter 20 providing such signals is given in FIG. 1.
  • the switch 9 is permanently closed (on).
  • the primary 31 of the transformer is subjected to a positive potential difference V2-REF transmitted to the secondary 32, to within a multiplication factor.
  • V2-REF positive potential difference
  • the magnetization current increases linearly.
  • the switch 12 opens, this current flows via the recovery diode 10 and decreases linearly to zero.
  • the potential difference Va- Vb at the terminals of the primary is reversed (if V3> V2) to reach the value V2-V3.
  • the second pulse train is obtained by permanently closing the switch 8 and actuating the switch 13. When the latter opens, the magnetization current flows via the recovery diode 11 (if V4> VI ).
  • the voltages VI to V4 can be different to a certain extent, which makes it possible to obtain asymmetrical output polarities Ve-Vf.
  • the pulses are spaced so that it is certain that the magnetizing current is canceled, unless there is a means of direct measurement of this current.
  • This type of arrangement has already been seen on multiple occa ⁇ sions, in particular in data transmission.
  • Figure 5 provides a variant operating with a single low voltage power supply of 5 volts characteristic of most digital circuits.
  • MOSFETs insulated gate field effect transistors
  • the parameters of the transformer 30 will be defined in such a way that the magnetization current brought back to the secondary is much lower than the peak current requested by the total output load. Its size will be very small if the active pulses are short-lived.
  • the receiver 40 is equipped with two voltage discriminators, 6 and 5, the thresholds Vzl and Vz2 taken from intermediate points of the secondary 32 are respectively intermediate between the amplitudes of the positive pulses of the first and second trains, and the amplitudes of the pulses negative sions of the first and second trains (illustrated on the timing diagrams Vc-Vd and Ve-Vf in Figure 2).
  • the first pulse train (9 closed) the voltage of the positive pulses exceeds the threshold value Vzl of the discriminator 6 (while the voltage of the negative pulses is insufficient to trigger the discriminator 5), which closes the switch 4 and allows the rectification of the positive half-waves of the signal Vc-Vd by the diode 1 in the storage and filtering capacitor 7.
  • the output voltage Ve-Vf is then positive and its module is equal to the amplitude of the positive pulses of the first train of pulses Vc-Vd (except for the semiconductor thresholds).
  • the discriminator 5 triggers the recovery of the negative half-waves of the signal Vc-Vd through the diode 2 and the switch 3, while the discriminator 6 remains inhibited, keeping the switch 4 open.
  • the output voltage Ve-Vf becomes negative, of amplitude equal to that of the negative pulses of the signal Vc-Vd.
  • FIG. 3 is an alternative embodiment of the receiver 40 using MOSFETs transistors advantageous by their intrinsic diode.
  • Each discriminator consists of a Zener reference diode and a resistor, its threshold being the sum of the reverse breakdown voltage of the Zener diode and the threshold of the MOSFET transistor.
  • the blocking of these MOSFETs is particularly easy, the charges stored in the gate-source capacity being discharged by the Zener in direct conduction.
  • the transistors 3 and 4 are NPN bipolar, which requires the addition of the external diodes 1 and 2.
  • the discriminators have an overlapping diagram, so as to slightly reduce the consumption of the circuit.
  • the thresholds are equal to the sum of two direct diode thresholds and the reverse breakdown voltage of the corresponding Zener diode.
  • FIGS. 3, 4 and 5 are only examples of embodiment, the type and polarity of the switch semiconductors of which can easily be changed. the arrangement of the discriminators, provided that the basic principles of Figures 1 and 2 are respected.
  • the invention is particularly applicable to voltage generators with galvanic isolation of switchable polarity.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

A device for generating a successively positive and negative, galvanically isolated bipolar voltage by sending two kinds of pulse trains with differing amplitudes through a single transformer (30) with a single primary and a single secondary, whereby only positive swings of the first kind of signal and only negative swings of the second kind of signal are rectified in an output capacitor (7). The device may be used to control high-voltage power semiconductors.

Description

GENERATEUR BIPOLAIRE A ISOLATION GALVANIQUE DE POLARITE BIPOLAR GENERATOR WITH GALVANIC POLARITY INSULATION
COMMUTABLESWITCHABLE
La présente invention concerne les générateurs de tension bipo- laire à isolation galvanique assurant en particulier la commande des semi¬ conducteurs de puissance.The present invention relates to bipolar voltage generators with galvanic isolation ensuring in particular the control of power semiconductors.
Certaines applications électroniques et électrotechniques nécessi¬ tent un générateur isolé galvaniquement fournissant une tension successi¬ vement positive et négative, d'amplitude et de durée éventuellement in- égales. C'est le cas par exemple de la commande de commutateurs de puis¬ sance haute tension, caractérisée par de fortes puissances transitoires.Certain electronic and electrotechnical applications require a galvanically isolated generator supplying a successively positive and negative voltage, of possibly unequal amplitude and duration. This is the case for example of the control of high voltage power switches, characterized by high transient powers.
Les convertisseurs piézoélectriques ou photo-électriques répondent rarement à ce problème car trop limités en puissance actuellement. La so¬ lution classique consiste à utiliser un coupleur optique suivi d'une in ter - face de puissance, l'énergie étant fournie par un transformateur alimen¬ tant un pont redresseur. Ce montage a plusieurs inconvénients: il double les chemins critiques d'isolation, le coupleur optique a une faible immunité contre les gradients rapides de tension, enfin, une complexité certaine handicape la fiabilité. Le brevet français 2556905 propose de transmettre magnétiquement l'énergie nécessaire et l'information de polarité de la tension. Mais il faut alors soit deux transformateurs, soit un seul ayant de nombreux enroule¬ ments isolés, ce qui en augmente le coût de fabrication. D'autres solutions n'employant qu'un seul transformateur à deux enroulements ont été pro- posées récemment, mais elles restent encore complexes et ne fournissent pas aisément une sortie négative.Piezoelectric or photoelectric converters rarely respond to this problem because they are currently too limited in power. The conventional solution consists in using an optical coupler followed by a power interface, the energy being supplied by a transformer as a rectifier bridge. This arrangement has several drawbacks: it doubles the critical isolation paths, the optical coupler has low immunity against rapid voltage gradients, finally, a certain complexity handicaps reliability. French patent 2556905 proposes to transmit the necessary energy magnetically and the voltage polarity information. But then either two transformers, or only one having many isolated windings, which increases the manufacturing cost. Other solutions employing only one transformer with two windings have been proposed recently, but they are still complex and do not easily provide a negative output.
C'est pourquoi l'invention a pour but de générer une tension iso¬ lée galvaniquement, négative ou positive selon la commande, en utilisant un unique transformateur à deux enroulements isolés et très peu d'autres composants.This is why the invention aims to generate a galvanically isolated voltage, negative or positive depending on the order, using a single transformer with two isolated windings and very few other components.
Ce problème est résolu en envoyant à travers le transformateur deux types de signaux bipolaires ayant des formes d'ondes différentes, cette différence étant détectée au secondaire du transformateur pour commander la polarité de la tension à générer. La détection se fait sur la tension des impulsions, plutôt que sur leur durée, pour obtenir un mon¬ tage discriminateur plus fiable. Le circuit devient alors avantageusement simple, son unique transformateur supportant de plus de forts gradients de tension de mode commun.This problem is resolved by sending through the transformer two types of bipolar signals having different waveforms, this difference being detected at the transformer secondary to control the polarity of the voltage to be generated. The detection is done on the voltage of the pulses, rather than on their duration, to obtain a more reliable discriminating assembly. The circuit then advantageously becomes simple, its single transformer supporting more strong common mode voltage gradients.
FEUILLE DE REMPLACEMENT D'autres caractéristiques et avantages de l'invention apparaîtront avec la description qui va suivre de certains de ses modes de réalisation donnés à titre d'exemples non limi¬ tatifs, en référence aux dessins ci-annexés sur lesquels: - La figure 1 représente le schéma de principe général, les commutateurs étant supposés parfaits.REPLACEMENT SHEET Other characteristics and advantages of the invention will appear with the following description of some of its embodiments given by way of nonlimiting examples, with reference to the attached drawings in which: - Figure 1 shows the general schematic diagram, the switches being assumed to be perfect.
- La figure 2 représente un exemple d'oscillogramme re- levé en différents points de la figure 1. Les indications "on" et "off" indiquent que les interrupteurs correspondants sont respectivement fermés et ouverts.- Figure 2 shows an example of an oscillogram taken at different points in Figure 1. The indications "on" and "off" indicate that the corresponding switches are closed and open respectively.
- La figure 3 représente un circuit récepteur équipé de transistors dits "MOSFETs", à effet de champ à grille isolée.- Figure 3 shows a receiver circuit equipped with so-called "MOSFETs" transistors, with an insulated gate field effect.
- La figure 4 représente une variante de circuit récep¬ teur équipé de transistors bipolaires NPN. - La figure 5 représente un circuit émetteur partageant la même alimentation 5 volts que les circuits logiques.- Figure 4 shows a variant of receiver circuit equipped with NPN bipolar transistors. - Figure 5 shows a transmitter circuit sharing the same 5-volt supply as the logic circuits.
Comme on l'a dit précédemment, l'invention nécessite de fournir à travers un transformateur d'isolation 30 un signal Vc-Vd comprenant deux types de trains d'impulsions différen- ciées par leurs niveaux de tension. Cette différence, appa¬ rente sur la figure 2, consiste en ce que l'amplitude des im¬ pulsions positives et négatives du premier train (généré lorsque l'interrupteur 9 est fermé) est respectivement nette¬ ment supérieure et nettement inférieure à celle des impul- sions positives et négatives du deuxième train généré lorsque l'interrupteur 8 est fermé, la composante continue restant nulle à chaque période pour réduire le courant magnétisant.As mentioned above, the invention requires providing through an isolation transformer 30 a Vc-Vd signal comprising two types of pulse trains differentiated by their voltage levels. This difference, which appears in FIG. 2, consists in that the amplitude of the positive and negative impulses of the first train (generated when the switch 9 is closed) is respectively significantly greater and significantly less than that of positive and negative pulses of the second train generated when the switch 8 is closed, the DC component remaining zero at each period to reduce the magnetizing current.
Un exemple d'émetteur 20 fournissant de tels signaux est donné en figure 1. Lors du premier train d'impulsions l'interrupteur 9 est fermé (on) en permanence. Chaque fois que l'interrupteur 12 se ferme, le primaire 31 du transforma¬ teur est soumis à une différence de potentiel positive V2-REF transmise au secondaire 32, à un facteur de multiplication près. Simultanément le courant de magnétisation croît linéai- rement. Quand l'interrupteur 12 s'ouvre, ce courant s'écoule via la diode de récupération 10 et diminue linéairement jusqu'à zéro. Pendant ce temps la différence de potentiel Va- Vb aux bornes du primaire s'inverse (si V3 > V2) pour at¬ teindre la valeur V2-V3. Le deuxième train d'impulsions est obtenu en fermant en permanence 1'interrupteur 8 et en actionnant 1'interrupteur 13. Quand celui-ci s'ouvre, le courant de magnétisation s'écoule via la diode de récupération 11 (si V4 > VI). Les tensions VI à V4 peuvent être différentes dans une certaine mesure, ce qui permet d'obtenir des polarités de sortie Ve-Vf asymétriques. Les impulsions sont espacées de telle façon que l'on soit sûr que le courant de magnétisation soit annulé, à moins de disposer d'un moyen de mesure direct de ce courant. Ce genre de montage a déjà été vu en de multiples occa¬ sions, en particulier en transmission de données. La figure 5 en propose une variante fonctionnant avec une unique alimen¬ tation basse tension de 5 volts caractéristique de la plupart des circuits numériques. On pourra remplacer avec profit les transistors par des transistors à effet de champ à grille isolée, dits MOSFETs, susceptibles de pointes de courant plus intenses et possédant une diode intrinsèque.An example of a transmitter 20 providing such signals is given in FIG. 1. During the first pulse train, the switch 9 is permanently closed (on). Each time the switch 12 closes, the primary 31 of the transformer is subjected to a positive potential difference V2-REF transmitted to the secondary 32, to within a multiplication factor. Simultaneously the magnetization current increases linearly. When the switch 12 opens, this current flows via the recovery diode 10 and decreases linearly to zero. During this time the potential difference Va- Vb at the terminals of the primary is reversed (if V3> V2) to reach the value V2-V3. The second pulse train is obtained by permanently closing the switch 8 and actuating the switch 13. When the latter opens, the magnetization current flows via the recovery diode 11 (if V4> VI ). The voltages VI to V4 can be different to a certain extent, which makes it possible to obtain asymmetrical output polarities Ve-Vf. The pulses are spaced so that it is certain that the magnetizing current is canceled, unless there is a means of direct measurement of this current. This type of arrangement has already been seen on multiple occa¬ sions, in particular in data transmission. Figure 5 provides a variant operating with a single low voltage power supply of 5 volts characteristic of most digital circuits. We can profitably replace the transistors with insulated gate field effect transistors, called MOSFETs, capable of more intense current spikes and having an intrinsic diode.
Les paramètres du transformateur 30 seront définis de telle façon que le courant de magnétisation ramené au secon- daire soit très inférieur au courant crête demandé par la charge totale de sortie. Sa taille sera très petite si les impulsions actives sont de courte durée.The parameters of the transformer 30 will be defined in such a way that the magnetization current brought back to the secondary is much lower than the peak current requested by the total output load. Its size will be very small if the active pulses are short-lived.
Le récepteur 40 est équipé de deux discriminateurs de tensions, 6 et 5, dont les seuils Vzl et Vz2 prélevés sur des points intermédiaires du secondaire 32 sont respectivement intermédiaires entre les amplitudes des impulsions positives des premier et deuxième trains, et les amplitudes des impul¬ sions négatives des premier et deuxième trains (illustrés sur les chronogrammes Vc-Vd et Ve-Vf de la figure 2) . Lors du premier train d'impulsions (9 fermé) la tension des impulsions positives dépasse la valeur Vzl de seuil du discriminateur 6 (alors que la tension des impulsions néga¬ tives est insuffisante pour déclencher le discriminateur 5) , lequel ferme le commutateur 4 et permet le redressement des alternances positives du signal Vc-Vd par la diode 1 dans le condensateur 7 de mémorisation et de filtrage. La tension de sortie Ve-Vf est alors positive et son module est égal à l'amplitude des impulsions positives du premier train d'impulsions Vc-Vd (aux seuils des semi-conducteurs près). Lors du deuxième train d'impulsions (8 fermé), la si¬ tuation est inversée: le discriminateur 5 déclenche le re¬ dressement des alternances négatives du signal Vc-Vd au tra¬ vers de la diode 2 et de l'interrupteur 3, alors que le dis- criminateur 6 reste inhibé, maintenant ouvert l'interrupteur 4. La tension de sortie Ve-Vf devient négative, d'amplitude égale à celle des impulsions négatives du signal Vc-Vd.The receiver 40 is equipped with two voltage discriminators, 6 and 5, the thresholds Vzl and Vz2 taken from intermediate points of the secondary 32 are respectively intermediate between the amplitudes of the positive pulses of the first and second trains, and the amplitudes of the pulses negative sions of the first and second trains (illustrated on the timing diagrams Vc-Vd and Ve-Vf in Figure 2). During the first pulse train (9 closed) the voltage of the positive pulses exceeds the threshold value Vzl of the discriminator 6 (while the voltage of the negative pulses is insufficient to trigger the discriminator 5), which closes the switch 4 and allows the rectification of the positive half-waves of the signal Vc-Vd by the diode 1 in the storage and filtering capacitor 7. The output voltage Ve-Vf is then positive and its module is equal to the amplitude of the positive pulses of the first train of pulses Vc-Vd (except for the semiconductor thresholds). During the second pulse train (8 closed), the situation is reversed: the discriminator 5 triggers the recovery of the negative half-waves of the signal Vc-Vd through the diode 2 and the switch 3, while the discriminator 6 remains inhibited, keeping the switch 4 open. The output voltage Ve-Vf becomes negative, of amplitude equal to that of the negative pulses of the signal Vc-Vd.
On remarquera que ce montage est particulièrement immu¬ nisé contre les défauts propres aux semi-conducteurs actuels, tels le temps de récupération inverse des diodes et le temps de stockage des transistors. En effet, dans toutes les éven¬ tualités considérées, le courant de décharge du condensateur 7 est toujours strictement limité au courant magnétisant. Par ailleurs la commande de polarité K (Fig 5) peut être le plus souvent parfaitement asynchrone de la phase des impulsions.It will be noted that this arrangement is particularly immu¬ nized against the defects specific to current semiconductors, such as the reverse recovery time of the diodes and the storage time of the transistors. Indeed, in all the events considered, the discharge current of the capacitor 7 is always strictly limited to the magnetizing current. Furthermore, the polarity control K (FIG. 5) can most often be perfectly asynchronous in the phase of the pulses.
La figure 3 est une variante de réalisation du récep¬ teur 40 utilisant des transistors MOSFETs avantagés par leur diode intrinsèque. Chaque discriminateur est constitué d'une diode référence Zener et d'une résistance, son seuil étant la somme de la tension de claquage inverse de la diode Zener et du seuil du transistor MOSFET. Le blocage de ces MOSFETs est particulièrement aisé, les charges stockées dans la capacité grille-source s'évacuant par la Zener en conduction directe. Dans la variante de la figure 4, les transistors 3 et 4 sont des bipolaires NPN, ce qui nécessite l'adjonction des diodes externes 1 et 2. Les discriminateurs ont un schéma im¬ briqué, de façon à réduire un peu la consommation du montage. Ici les seuils sont égaux à la somme de deux seuils de diode en direct et de la tension de claquage inverse de la diode Zener correspondante. Ces deux variantes ont l'avantage de ne pas nécessiter de point intermédiaire pour le secondaire 32.Figure 3 is an alternative embodiment of the receiver 40 using MOSFETs transistors advantageous by their intrinsic diode. Each discriminator consists of a Zener reference diode and a resistor, its threshold being the sum of the reverse breakdown voltage of the Zener diode and the threshold of the MOSFET transistor. The blocking of these MOSFETs is particularly easy, the charges stored in the gate-source capacity being discharged by the Zener in direct conduction. In the variant of FIG. 4, the transistors 3 and 4 are NPN bipolar, which requires the addition of the external diodes 1 and 2. The discriminators have an overlapping diagram, so as to slightly reduce the consumption of the circuit. . Here the thresholds are equal to the sum of two direct diode thresholds and the reverse breakdown voltage of the corresponding Zener diode. These two variants have the advantage of not requiring an intermediate point for the secondary 32.
Il est évident aux yeux de l'homme de l'art que les va¬ riantes précédentes des figures 3, 4 et 5 ne sont que des exemples de réalisation, dont on pourra aisément changer le type et la polarité des semi-conducteurs interrupteurs ou l'agencement des discriminateurs, pourvu que les principes de base des figures 1 et 2 soient respectés.It is obvious to those skilled in the art that the preceding variants of FIGS. 3, 4 and 5 are only examples of embodiment, the type and polarity of the switch semiconductors of which can easily be changed. the arrangement of the discriminators, provided that the basic principles of Figures 1 and 2 are respected.
L'invention s'applique particulièrement aux générateurs de tension à isolation galvanique de polarité commutable. The invention is particularly applicable to voltage generators with galvanic isolation of switchable polarity.

Claims

REVENDICATIONS
1- Dispositif générateur d'une tension bipolaire suc¬ cessivement positive et négative isolée galvaniquement com- prenant un émetteur 20 envoyant alternativement à un récep¬ teur 40, à travers un transformateur 30 ayant un seul pri¬ maire et un seul secondaire isolés, deux types de trains d'impulsions bipolaires de valeur moyenne nulle à chaque pé¬ riode tels que l'amplitude des impulsions positives et néga- tives du train de premier type soit respectivement nettement supérieure et inférieure à celle des impulsions positives et négatives du train de deuxième type, dispositif caractérisé en ce que le récepteur 40 est équipé de deux discriminateurs 6 et 5 de tension respectivement positive et négative, de seuils Vzl et Vz2 prélevés sur des points intermédiaires du secondaire 32 , commandant respectivement les interrupteurs 4 et 5 et présentant des valeurs respectivement intermédiaire entre les amplitudes des impulsions positives des trains de premier et deuxième type, et intermédiaire entre les ampli- tudes des impulsions négatives des trains de premier et deuxième type, de façon que seules les alternances positives du premier train au secondaire 32 du transformateur soient redressées au travers de la diode 1 et du commutateur com¬ mandé 4, et que seules les alternances négatives du deuxième train au secondaire 32 du transformateur soient redressées au travers de la diode 2 et du commutateur commandé 3, le re¬ dressement s'effectuant sur un condensateur 7 de mémorisation et de filtrage.1- Device generating a successively positive and negative bipolar voltage galvanically isolated comprising a transmitter 20 sending alternately to a receiver 40, through a transformer 30 having a single primary and a single isolated secondary, two types of bipolar pulse trains of zero mean value at each period such that the amplitude of the positive and negative pulses of the first type train is respectively significantly higher and lower than that of the positive and negative pulses of the second train type, device characterized in that the receiver 40 is equipped with two discriminators 6 and 5 of positive and negative voltage respectively, of thresholds Vzl and Vz2 taken from intermediate points of the secondary 32, respectively controlling the switches 4 and 5 and having values respectively intermediate between the amplitudes of the positive pulses of the first and last trains uxth type, and intermediate between the amplitudes of the negative pulses of the first and second type trains, so that only the positive half-waves from the first train to the secondary 32 of the transformer are rectified through diode 1 and the controlled switch 4, and that only the negative half-waves of the second train at the secondary 32 of the transformer are rectified through the diode 2 and the controlled switch 3, the re¬ rectification being effected on a capacitor 7 for storage and filtering.
2- Dispositif selon la revendication 1, caractérisé en ce que le secondaire 32 du transformateur n'a aucun point in¬ termédiaire, en ce que les seuils Vzl et Vz2 des discrimina¬ teurs 6 et 5 sont ajustés par des diodes références de ten¬ sion mises en série avec des résistances, et en ce que les commutateurs sont des transistors bipolaires NPN. 3- Dispositif selon la revendication 2, caractérisé en ce que les transistors NPN sont remplacés par des transistors à effet de champ à grille isolée possédant une diode intrin¬ sèque remplissant les fonctions des redresseurs 1 et 2. 2- Device according to claim 1, characterized in that the secondary 32 of the transformer has no intermediate point, in that the thresholds Vzl and Vz2 of the discriminators 6 and 5 are adjusted by reference diodes of ten¬ sion in series with resistors, and in that the switches are NPN bipolar transistors. 3- Device according to claim 2, characterized in that the NPN transistors are replaced by field effect transistors with insulated gate having an intrinsic diode fulfilling the functions of rectifiers 1 and 2.
PCT/FR1992/001109 1991-12-02 1992-11-27 Switchable polarity bipolar generator with galvanic isolation WO1993011609A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR91/14897 1991-12-02
FR9114897A FR2684500B1 (en) 1991-12-02 1991-12-02 BIPOLAR GENERATOR WITH SWITCHABLE POLARITY GALVANIC INSULATION.

Publications (1)

Publication Number Publication Date
WO1993011609A1 true WO1993011609A1 (en) 1993-06-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR1992/001109 WO1993011609A1 (en) 1991-12-02 1992-11-27 Switchable polarity bipolar generator with galvanic isolation

Country Status (3)

Country Link
AU (1) AU3259793A (en)
FR (1) FR2684500B1 (en)
WO (1) WO1993011609A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671807A1 (en) * 1994-03-07 1995-09-13 Siemens Aktiengesellschaft Switching power supply with transfer of information from the primary to the secondary side
GB2341288A (en) * 1998-06-23 2000-03-08 Eev Ltd High voltage switching arrangement for driving RF sources
DE19963330C1 (en) * 1999-02-10 2000-09-21 Michael Klemt Circuit arrangement for the galvanically isolated control of a power transistor
EP1533903A2 (en) * 2003-11-19 2005-05-25 Semikron Elektronik GmbH Patentabteilung Circuit and method for the voltage insulated transmission of switching information
GB2559423A (en) * 2017-02-07 2018-08-08 Sas Heyday Integrated Circuits An isolated high side driver

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DE4406500A1 (en) * 1994-02-28 1995-08-31 Siemens Ag Circuit for low-loss AC voltage generation
DE19534888A1 (en) * 1995-09-20 1997-03-27 Bosch Gmbh Robert Circuit arrangement for multiple use of a transformer core

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DE3527130A1 (en) * 1985-07-29 1987-01-29 Flachenecker Gerhard Switching amplifier with a field effect transistor
EP0486359A1 (en) * 1990-11-16 1992-05-20 General Electric Cgr S.A. Low frequency switching control circuit for field-effect transistors and insulated gate bipolar transistors

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DE3243660A1 (en) * 1981-11-26 1983-06-01 Zumtobel AG, 6850 Dornbirn Circuit arrangement for the potential-isolated driving of at least one field-effect transistor
DE3527130A1 (en) * 1985-07-29 1987-01-29 Flachenecker Gerhard Switching amplifier with a field effect transistor
EP0486359A1 (en) * 1990-11-16 1992-05-20 General Electric Cgr S.A. Low frequency switching control circuit for field-effect transistors and insulated gate bipolar transistors

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671807A1 (en) * 1994-03-07 1995-09-13 Siemens Aktiengesellschaft Switching power supply with transfer of information from the primary to the secondary side
GB2341288A (en) * 1998-06-23 2000-03-08 Eev Ltd High voltage switching arrangement for driving RF sources
US6496047B1 (en) 1998-06-23 2002-12-17 Eev Liimited Solid state switch with pulsed control
GB2341288B (en) * 1998-06-23 2003-12-10 Eev Ltd Switching arrangement
DE19963330C1 (en) * 1999-02-10 2000-09-21 Michael Klemt Circuit arrangement for the galvanically isolated control of a power transistor
EP1533903A2 (en) * 2003-11-19 2005-05-25 Semikron Elektronik GmbH Patentabteilung Circuit and method for the voltage insulated transmission of switching information
EP1533903A3 (en) * 2003-11-19 2007-03-21 SEMIKRON Elektronik GmbH & Co. KG Circuit and method for the voltage insulated transmission of switching information
GB2559423A (en) * 2017-02-07 2018-08-08 Sas Heyday Integrated Circuits An isolated high side driver
GB2559423B (en) * 2017-02-07 2020-05-13 Sas Heyday Integrated Circuits An isolated high side drive circuit

Also Published As

Publication number Publication date
AU3259793A (en) 1993-06-28
FR2684500B1 (en) 1994-06-10
FR2684500A1 (en) 1993-06-04

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