FR2684500A1 - BIPOLAR GENERATOR WITH GALVANIC ISOLATION OF SWITCHABLE POLARITY. - Google Patents
BIPOLAR GENERATOR WITH GALVANIC ISOLATION OF SWITCHABLE POLARITY. Download PDFInfo
- Publication number
- FR2684500A1 FR2684500A1 FR9114897A FR9114897A FR2684500A1 FR 2684500 A1 FR2684500 A1 FR 2684500A1 FR 9114897 A FR9114897 A FR 9114897A FR 9114897 A FR9114897 A FR 9114897A FR 2684500 A1 FR2684500 A1 FR 2684500A1
- Authority
- FR
- France
- Prior art keywords
- positive
- negative
- transformer
- voltage
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/605—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/61—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Abstract
Description
La présente invention concerne les générateurs de ten- ion bipolaire à isolation galvanique assurant en particulier la commande des semi-conducteurs de puissance
Certaines applications électroniques et électrotech- ni quels nécessitent un générateur i sol e gai vani quement four- naissant une tension successivement positive et négative, d'amplitude et de durée éventuellement inégales. C'est le cas par exemple de la commande de commutateurs de puissance haute tensiorls caractérisée par de fortes puissances transitoires.The present invention relates to galvanic-isolated bipolar voltage generators providing in particular the control of power semiconductors.
Some electronic and electrotech applications require a ground-based generator that provides a successively positive and negative voltage of varying amplitude and duration. This is the case, for example, of the control of high-voltage power switches characterized by high transient powers.
Les convertisseurs piézoélectriques ou photo-élec- triques répondent rarement à ce problème car trop limités en puissance actuellement. La solution classique consiste à utiliser un coupleur optique suivi d'une interface de puissances l'énergie étant fournie par un transformateur alimentant un pont redresseur Ce montage a plusieurs inconvénients: il double les chemins critiques d'isolation le coupleur optique a une faible immunite contre les gradients rapides de ten sion, enfin, une complexité certaine handicape la fiabilité. Piezoelectric or photoelectric converters rarely meet this problem because they are too limited in power at present. The conventional solution consists in using an optical coupler followed by a power interface, the energy being supplied by a transformer supplying a rectifier bridge. This arrangement has several disadvantages: it doubles the critical isolation paths the optical coupler has a low immunity against the rapid gradients of tension, finally, a certain complexity handicaps the reliability.
Le brevet français 2556905 propose de transmettre ma gnétiquement l'énergie nécessaire et l'information de polarite de la tension Mais il faut alors soit deux transformd- teurs, soit un seul ayant de nombreux enroulements isolés ce qui en augmente le coût de fabrication. D'autres solutions n'employant qu'un seul transformateur à deux enroulements ont été proposes récemment, mais elles restent encore complexes et ne fournissent pas aisément une sortie négative. French patent 2556905 proposes to transmit the necessary energy and voltage polarity information mechanically. However, two transformers or a single one having many isolated windings must be transmitted, which increases the manufacturing cost thereof. Other solutions employing a single two-winding transformer have recently been proposed, but they are still complex and do not readily provide a negative output.
C'est pourquoi l'invention a pour but de générer une tension isolée galvaniquement, négative ou positive selon la commande, en utilisant un unique transformateur à deux enroulements isoles et très peu d'autres composants
Ce problème est résolu en envoyant à travers le transformateur deux types de signaux bipolaires ayant des formes d'ondes différentes, cette différence étant détectée au se conduire du transformateur pour commander la polarité de la tension à générer La détection se fait sur la tension des impulsions, plutôt que sur leur durée, pour obtenir un mon tage discriminateur plus fiable Le circuit devient alors avantageusement simple, son unique transformateur supportant de plus de forts gradients de tension de mode commun. Therefore, the object of the invention is to generate a galvanically isolated, negative or positive voltage according to the order, using a single transformer with two isolated windings and very few other components.
This problem is solved by sending through the transformer two types of bipolar signals having different waveforms, this difference being detected at the conduct of the transformer to control the polarity of the voltage to be generated Detection is done on the pulse voltage rather than their duration, to obtain a more reliable discrimination discriminator circuit The circuit then becomes advantageously simple, its single transformer supporting more strong common mode voltage gradients.
D'autres caractéristiques et avantages de l'invention apparattront avec la description qui va suivre de certains de ses modes de réalisation donnés à titre d'exemples non limitatifs, en référence aux dessins ci-annexés sur lesquels:
- La figure i représente le schéma de principe général, les commutateurs étant supposés parfaits.Other features and advantages of the invention will become apparent with the following description of some of its embodiments given as non-limiting examples, with reference to the accompanying drawings in which:
FIG. 1 represents the general block diagram, the switches being assumed to be perfect.
- La figure 2 représente un exemple d'oscillogramme relevé en différents points de la figure t. Les indications iton" et toff" indiquent que les interrupteurs correspondants sont respectivement fermés et ouverts. FIG. 2 represents an example of an oscillogram taken at various points in FIG. The iton "and toff" indications indicate that the corresponding switches are respectively closed and open.
- La figure 3 représente un circuit récepteur équipé de transistors dits "M0SFETs" à effet de champ à grille isolée. FIG. 3 represents a receiver circuit equipped with insulated gate field effect transistors "M0SFETs".
- La figure 4 représente une variante de circuit recep- teur équipé de transistors bipolaires NPN. FIG. 4 represents a receiver circuit variant equipped with NPN bipolar transistors.
- La figure 5 représente un circuit émetteur partageant la me me alimentation 5 volts que les circuits logiques. FIG. 5 represents a transmitter circuit sharing the same 5-volt power supply as the logic circuits.
Comme on l'a dit précédemment, l'invention nécessite de fournir à travers un transformateur d'isolation 30 un signal
Vc-Vd comprenant deux types de trains d'impulsions differen- ciées par leurs niveaux de tension. Cette différence, apparente sur la figure 2, consiste en ce que l'amplitude des impulsions positives et négatives du premier train (généré lorsque l'interrupteur 9 est fermés est respectivement nettement supérieure et nettement inférieure à celle des impul suions positives et négatives du deuxième train généré lorsque l'interrupteur e est fermé, la composante continue restant nulle à chaque période pour réduire le courant magnétisant
Un exemple d'émetteur 20 fournissant de tels signaux est donné en figure 1. Lors du premier train dtimpulsions l'interrupteur 9 est fermé (on) en permanence. Chaque fois que l'interrupteur 12 se ferme, le primaire 31 du transformateur est soumis à une différence de potentiel positive V2-REF transmise au secondaire 32, à un facteur de multiplication près. Simultanément le courant de magnétisation croft linéairement. Quand l'interrupteur 12 s'ouvre, ce courant s'écoule via la diode de récupération 10 et diminue linéairement jusqu'à zéro. Pendant ce temps la différence de potentiel Va Vb aux bornes du primaire s'inverse (si V3 > V2) pour atteindre la valeur V2-V3. As has been said above, the invention requires the provision of an isolation transformer 30
Vc-Vd comprising two types of pulse trains differen- tiated by their voltage levels. This difference, apparent in FIG. 2, consists in that the amplitude of the positive and negative pulses of the first train (generated when the switch 9 is closed is respectively significantly higher and much lower than that of the positive and negative pulses of the second train generated when the switch e is closed, the DC component remaining zero at each period to reduce the magnetizing current
An example of a transmitter 20 providing such signals is given in FIG. 1. During the first train of impulses, the switch 9 is permanently on (on). Whenever the switch 12 closes, the primary 31 of the transformer is subjected to a positive potential difference V2-REF transmitted to the secondary 32, to a multiplication factor. Simultaneously the magnetization current croft linearly. When the switch 12 opens, this current flows through the recovery diode 10 and decreases linearly to zero. During this time the potential difference Va Vb across the primary is reversed (if V3> V2) to reach the value V2-V3.
Le deuxième train d'impulsions est obtenu en fermant en permanence l'interrupteur 8 et en actionnant l'interrupteur 1 quand celui-ci s'ouvre, le courant de magnétisation s'écoule via la diode de récupération il Csi V4 > Vi). Les tensions Vi à V4 peuvent être differentes dans une certaine mesure, ce qui permet d'obtenir des polarités de sortie Ve-Vf asymétriques. Les impulsions sont espacées de telle façon que 1 'on soit sûr que le courant de magnétisation soit annulé, à moins de disposer d'un moyen de mesure direct de ce courant. The second pulse train is obtained by permanently closing the switch 8 and by actuating the switch 1 when the latter opens, the magnetization current flows via the recovery diode (Csi V4> Vi). The voltages V1 to V4 can be different to a certain extent, which makes it possible to obtain asymmetrical V e-Vf output polarities. The pulses are spaced apart so that it is certain that the magnetization current is canceled unless there is a direct measurement means for this current.
Ce genre de montage a déjà été vu en de multiples occasions, en particulier en transmission de données. La figure en propose une variante fon~tionnant avec une unique alimentation basse tension de 5 volts caractéristique de la plupart des circuits numériques. On pourra remplacer avec profit les transistors par des transistors à effet de champ à rille isolee, dits MOSFETs, susceptibles de pointes de courant plus intenses et possédant une diode intrinsèque. This kind of editing has already been seen on many occasions, especially in data transmission. The figure proposes a variant fon ~ ingnant with a single low voltage power supply of 5 volts characteristic of most digital circuits. It will be possible to advantageously replace the transistors with insulated-rille field-effect transistors, called MOSFETs, capable of more intense current peaks and having an intrinsic diode.
Les paramètres du transformateur 30 seront définis de telle façon que le courant de magnétisation ramené au secondaire soit très inférieur au courant crete demande par la charge totale de sortie. Sa taille sera très petite si les impulsions actives sont de courte durée. The parameters of the transformer 30 will be defined such that the magnetization current brought back to the secondary is much lower than the peak current demanded by the total output load. Its size will be very small if the active pulses are of short duration.
Le récepteur 40 est équipe de deux discriminateurs de tensions 6 et 5, dont les seuils Vz1 et Vz2 prélevés sur des points intermédiaires du secondaire 32 sont respectivement intermédiaires entre les amplitudes des impulsions positives des premier et deuxième trains, et les amplitudes des impulsions négatives des premier et deuxième trains (illustrEs sur les chronogrammes Vc-Vd et Ve-Vf de la figure 2). The receiver 40 is equipped with two discriminators of voltages 6 and 5, whose thresholds Vz1 and Vz2 taken from intermediate points of the secondary 32 are respectively intermediate between the amplitudes of the positive pulses of the first and second trains, and the amplitudes of the negative pulses of the first and second trains (illustrated on the timing diagrams Vc-Vd and Ve-Vf of Figure 2).
Lors du premier train d'impulsions (9 fermé) la tension des impulsions positives dépasse la valeur Vzi de seuil du discriminateur 6 (alors que la tension des impulsions négatives est insuffisante pour déclencher le discriminateur 5), lequel ferme le commutateur 4 et permet le redressement des alterîaar'r=es positives du signal Vc-Vd par la diode i dans le condensateur 7 de mémorisation et de filtrage. La tension de sortie Ve-Vf est alors positive et son module est égal à l'amplitude des impulsions positives du premier train d'impulsions Vc-Vd (aux seuils des semi-conducteurs pres). During the first pulse train (9 closed) the voltage of the positive pulses exceeds the threshold value Vzi of the discriminator 6 (whereas the voltage of the negative pulses is insufficient to trigger the discriminator 5), which closes the switch 4 and allows the rectifying the positive alterations of the signal Vc-Vd by the diode i in the storage capacitor 7 and filtering. The output voltage Ve-Vf is then positive and its modulus is equal to the amplitude of the positive pulses of the first pulse train Vc-Vd (at the thresholds of the semi-conductors near).
Lors du deuxième train d'impulsions (S fermé), la situation est inversée: le discriminateur 5 déclenche le redressement des alternances négatives du signal Vc-Yd au travers de la diode 2 et de l'interrupteur 3, alors que le discriminateur 6 reste inhibé, maintenant ouvert l'interrupteur 4. La tension de sortie Ye-Vf devient négative, d'amplitude égale à celle des impulsions négatives du signal Vc-Vd. During the second pulse train (S closed), the situation is reversed: the discriminator 5 triggers the recovery of the negative half-waves of the signal Vc-Yd through the diode 2 and the switch 3, while the discriminator 6 remains inhibited, now open the switch 4. The output voltage Ye-Vf becomes negative, of amplitude equal to that of the negative pulses Vc-Vd signal.
On remarquera que ce montage est particulièrement immunisé contre les défauts propres aux semi-conducteurs actuels, tels le temps de récupération inverse des diodes et le temps de stockage des transistors. En effet, dans toutes les éven qualités considérées, le courant de décharge du condensateur 7 est toujours strictement limité au courant magnétisant. Par ailleurs la commande de polarité K (Fig 5) peut Entre le plus souvent parfaitement asynchrone de la phase des impulsions. It will be noted that this arrangement is particularly immune to defects specific to current semiconductors, such as the reverse recovery time of the diodes and the storage time of the transistors. Indeed, in all the considered qualities, the discharge current of the capacitor 7 is always strictly limited to the magnetizing current. Moreover, the polarity command K (FIG. 5) can most often be perfectly asynchronous of the phase of the pulses.
La figure 3 est une variante de réalisation du récepteur 40 utilisant des transistors MOSFETs avantagés par leur diode intrinsèque. Chaque discriminateur est constitué d'une diode référence Zener et d'une résistance, son seuil étant la somme de la tension de claquage inverse de la diode Zener et du seuil du transistor MOSFET. Le blocage de ces MOSFETs est particulièrement aise, les charges stockées dans la capacité grille-source s'évacuant par la Zener en conduction directe. FIG. 3 is an alternative embodiment of the receiver 40 using MOSFET transistors that are benefited by their intrinsic diode. Each discriminator consists of a Zener reference diode and a resistor, its threshold being the sum of the reverse breakdown voltage of the Zener diode and the threshold of the MOSFET transistor. The blocking of these MOSFETs is particularly comfortable, the charges stored in the gate-source capacity being evacuated by the zener in direct conduction.
Dans la variante de la figure 4, les transistors 3 et 4 sont des bipolaires NPN, ce qui nécessite l'adjonction des diodes externes 1 et 2. Les discriminateurs ont un schéma imbriqué, de façon à réduire un peu la consommation du montage. In the variant of Figure 4, the transistors 3 and 4 are NPN bipolar, which requires the addition of external diodes 1 and 2. The discriminators have a nested scheme, so as to reduce a little consumption of the assembly.
Ici les seuils sont égaux à la somme de deux seuils de diode en direct et de la tension de claquage inverse de la diode
Zener correspondante. Ces deux variantes ont l'avantage de ne pas nécessiter de point intermédiaire pour le secondaire 32.Here the thresholds are equal to the sum of two direct diode thresholds and the reverse breakdown voltage of the diode
Zener corresponding. These two variants have the advantage of not requiring an intermediate point for the secondary 32.
Il est évident aux yeux de l t homme de l'art que les variantes précédentes des figures 3, 4 et 5 ne sont que des exemples de réalisation, dont on pourra aisément changer le type et la polarité des semi-conducteurs interrupteurs ou l'agencement des discriminateurs, pourvu que les principes de base des figures t et 2 soient respectes,
L'invention s'applique particulièrement aux générateurs de tension à isolation galvanique de polarité commutable. It is obvious to those skilled in the art that the foregoing variants of FIGS. 3, 4 and 5 are only exemplary embodiments, the type and polarity of the semiconductor switches or the arrangement of which can easily be changed. discriminators, provided that the basic principles of Figures t and 2 are respected,
The invention is particularly applicable to voltage generators with galvanic isolation of switchable polarity.
Claims (3)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9114897A FR2684500B1 (en) | 1991-12-02 | 1991-12-02 | BIPOLAR GENERATOR WITH SWITCHABLE POLARITY GALVANIC INSULATION. |
| AU32597/93A AU3259793A (en) | 1991-12-02 | 1992-11-27 | Switchable polarity bipolar generator with galvanic isolation |
| PCT/FR1992/001109 WO1993011609A1 (en) | 1991-12-02 | 1992-11-27 | Switchable polarity bipolar generator with galvanic isolation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9114897A FR2684500B1 (en) | 1991-12-02 | 1991-12-02 | BIPOLAR GENERATOR WITH SWITCHABLE POLARITY GALVANIC INSULATION. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2684500A1 true FR2684500A1 (en) | 1993-06-04 |
| FR2684500B1 FR2684500B1 (en) | 1994-06-10 |
Family
ID=9419569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9114897A Expired - Fee Related FR2684500B1 (en) | 1991-12-02 | 1991-12-02 | BIPOLAR GENERATOR WITH SWITCHABLE POLARITY GALVANIC INSULATION. |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU3259793A (en) |
| FR (1) | FR2684500B1 (en) |
| WO (1) | WO1993011609A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4406500A1 (en) * | 1994-02-28 | 1995-08-31 | Siemens Ag | Circuit for low-loss AC voltage generation |
| WO1997011529A1 (en) * | 1995-09-20 | 1997-03-27 | Robert Bosch Gmbh | Circuit for the multiple use of a transformer core |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4407529C1 (en) * | 1994-03-07 | 1995-06-29 | Siemens Ag | Switched mode power supply (SMPS) contg. transformer with prim. and sec. windings |
| GB2341288B (en) * | 1998-06-23 | 2003-12-10 | Eev Ltd | Switching arrangement |
| DE19963330C1 (en) * | 1999-02-10 | 2000-09-21 | Michael Klemt | Circuit arrangement for the galvanically isolated control of a power transistor |
| DE10354067B4 (en) * | 2003-11-19 | 2006-03-23 | Semikron Elektronik Gmbh & Co. Kg | Circuit arrangement and method for isolated transmission of a switching information |
| GB2559423B8 (en) * | 2017-02-07 | 2023-06-28 | Heyday Integrated Circuits Sas | An isolated high side drive circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3243660A1 (en) * | 1981-11-26 | 1983-06-01 | Zumtobel AG, 6850 Dornbirn | Circuit arrangement for the potential-isolated driving of at least one field-effect transistor |
| DE3527130A1 (en) * | 1985-07-29 | 1987-01-29 | Flachenecker Gerhard | Switching amplifier with a field effect transistor |
| EP0486359A1 (en) * | 1990-11-16 | 1992-05-20 | General Electric Cgr S.A. | Low frequency switching control circuit for field-effect transistors and insulated gate bipolar transistors |
-
1991
- 1991-12-02 FR FR9114897A patent/FR2684500B1/en not_active Expired - Fee Related
-
1992
- 1992-11-27 AU AU32597/93A patent/AU3259793A/en not_active Abandoned
- 1992-11-27 WO PCT/FR1992/001109 patent/WO1993011609A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3243660A1 (en) * | 1981-11-26 | 1983-06-01 | Zumtobel AG, 6850 Dornbirn | Circuit arrangement for the potential-isolated driving of at least one field-effect transistor |
| DE3527130A1 (en) * | 1985-07-29 | 1987-01-29 | Flachenecker Gerhard | Switching amplifier with a field effect transistor |
| EP0486359A1 (en) * | 1990-11-16 | 1992-05-20 | General Electric Cgr S.A. | Low frequency switching control circuit for field-effect transistors and insulated gate bipolar transistors |
Non-Patent Citations (1)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 13, no. 354 (E-802)(3702) 8 Août 1989 & JP-1 114 115 ( YASKAWA ELECTRIC MFG CO LTD ) 2 Mai 1989 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4406500A1 (en) * | 1994-02-28 | 1995-08-31 | Siemens Ag | Circuit for low-loss AC voltage generation |
| WO1997011529A1 (en) * | 1995-09-20 | 1997-03-27 | Robert Bosch Gmbh | Circuit for the multiple use of a transformer core |
| US5872706A (en) * | 1995-09-20 | 1999-02-16 | Robert Bosch Gmbh | Circuit arrangement for multiple use of a transformer core |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993011609A1 (en) | 1993-06-10 |
| AU3259793A (en) | 1993-06-28 |
| FR2684500B1 (en) | 1994-06-10 |
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| ST | Notification of lapse |