WO1993003424A1 - Apparatus and method for focusing hard x-rays - Google Patents
Apparatus and method for focusing hard x-rays Download PDFInfo
- Publication number
- WO1993003424A1 WO1993003424A1 PCT/US1992/005042 US9205042W WO9303424A1 WO 1993003424 A1 WO1993003424 A1 WO 1993003424A1 US 9205042 W US9205042 W US 9205042W WO 9303424 A1 WO9303424 A1 WO 9303424A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- dislocation
- free
- lattice constant
- length
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims abstract description 114
- 239000000126 substance Substances 0.000 claims abstract description 27
- 230000005855 radiation Effects 0.000 claims abstract description 23
- 230000005251 gamma ray Effects 0.000 claims abstract description 20
- 230000007423 decrease Effects 0.000 claims abstract description 19
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 230000001902 propagating effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/062—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements the element being a crystal
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A dislocation-free, composite-substance crystal having a lattice constant which decreases over the length of the crystal (38) convergently focuses beams of hard X-rays or gamma rays (11). A single-substance, dislocation-free crystal (34) collimates diffuse beams of hard X-rays or gamma rays and projects the collimated radiation (11') to the focusing crystal (38). A mask (36) is interposed between the collimating crystal (34) and the focusing crystal (38) causing the collimated radiation (11'') to carry an image of the mask (36). The focusing crystal (38) produces a convergent hard X-ray beam or gamma ray beam (11''') to focus a reduced image of the mask (36) upon the photosensitive layer (41) of a wafer (39). An example of a dislocation-free crystal having a lattice constant which decreases over its length (38) is a dislocation-free silicon-germanium crystal (20) wherein the proportion of germanium to silicon varies over the length of the crystal.
Description
APPARATUS AND METHOD FOR FOCUSING HARD X-RAYS
TECHNICAL FIELD OF THE INVENTION
The present invention relates to lithographic techniques for producing images of masks and, more particularly, . to an apparatus and method for focusing hard X-rays and gamma rays to project a reduced image of a mask.
BACKGROUND OF THE INVENTION
One of the steps in producing integrated circuit semiconductor chips is to project the image defined by a mask onto the surface of a semiconductor wafer. In order to achieve greater miniaturization of the integrated circuits of these chips methods have been sought to project smaller mask images while maintaining sharp and precise circuit lines. To achieve this end, lithographic techniques progressed from the use of visible and ultra-violet electromagnetic energy to "soft X-rays." Soft X-rays occupy that portion of the electromagnetic spectrum just above ultra-violet energy. The shorter wavelength of soft X-rays makes possible the projection of smaller mask images.
■Hard X-rays have shorter wavelengths than soft X-rays and occupy that portion of the electromagnetic spectrum above soft X- rays. Gamma rays have wavelengths shorter than hard X-rays and occupy that part of the electromagnetic spectrum above hard X-rays. Thus, it would be desirable to utilize hard X-rays and gamma rays to project mask images to produce more minute chip circuitry. ' ' A problem in attempting to use these shorter-wavelength
electromagnetic energies (hard X-rays and gamma rays) is that useful manipulation is difficult because of the shorter wavelengths and high electrical 'energies involved. Standard focusing mechanisms, such as lenses and prisms, are ineffective.
SUMMARY OF THE INVENTION
It is an object of the invention to provide a means for using hard X-rays and gamma rays to project a mask image onto a surface.
It is a further object of the invention to provide a means to collimate diffuse hard X-ray or gamma ray beams and convergently focus these collimated beams to project a reduced mask image.
The present invention teaches the use of a dislocation-free, composite-substance crystal having a lattice constant which decreases over the length of the crystal to convergently focus beams of hard X-rays or gamma rays. The invention also teaches the use of a dislocation-free, single-substance, crystal to collimate diffuse beams of hard X-rays or gamma rays and, in turn, to project the collimated radiation to the composite crystal. A mask is interposed between the "collimating crystal" and the "focusing crystal." The focusing crystal produces convergent hard X-rays or gamma rays to focus a reduced image of the mask upon a desired surface, namely, a wafer. The invention further teaches as a focusing crystal a substantially dislocation-free silicon-germanium crystal wherein the proportion of germanium to silicon varies over the length of the silicon germanium crystal from about 100 percent germanium to about 100 percent silicon.
Other aspects, objects, features, and advantages of the present invention will become apparent to those skilled in the art upon reading the detailed description of preferred embodiments in conjunction with the accompanying drawings and appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a representation of a crystal illustrating principles utilized in the teachings of the invention.
Fig. 2 is a representation of a composite-substance crystal illustrating teachings of the invention. Fig. 3 is a schematic representation of an apparatus and method for convergently focusing hard X-rays or gamma rays to project a reduced mask image embodying teachings of the present invention.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
While the specification concludes with claims particularly pointing out and distinctly claiming the subject matter which is regarded as the present invention, the invention will now be described with reference to the following description of an embodiment taken in conjunction with the accompanying drawings. The broad technique taught by the invention is the manipulation of high energy, very small wavelength electromagnetic radiation. While this manipulation is suitable for many uses, it is particularly applicable to further teachings of the invention which are directed to the creation of mask images.
The invention manipulates hard X-rays and gamma rays for useful purposes by collimating and convergently focusing beams of these rays. Although 'most of the principles which form the foundation for the invention, which are described below, refer to X-ray phenomena, the teachings of the invention are equally applicable to the shorter wavelength radiation of gamma rays. Hard X-rays are considered to be those X-rays having electrical energy in the range of from 1 to 100 keV. The invention utilizes crystals to perform the collimating and focusing functions. For convenience, for the purposes of describing the invention, the crystals are referred to as a collimating crystal and a focusing crystal.
The invention's utilization of crystals as manipulating lenses is based upon the X-ray diffractive-properties of crystals. In general, X-rays striking a crystal are absorbed by the crystal. However, the diffraction of X-rays occurs when they strike a crystal at a particular angle with respect to the lattice structure of the crystal. In such instances, the X-rays are passed through the crystal, exiting at a particular angle. This propagation through the crystal occurs because the rays are internally reflected by the latticework of the crystal. This phenomenon is known as the Bragg condition and is quantitatively expressed as Bragg's Law or the Bragg equation, namely,
(n) (lambda) = 2 (d) sin b where n is an integer,
lambda is the wavelength of the X-ray, d is the lattice constant, or distance between the reflecting layers of the crystal, and b is the angle of incidence of the ray with respect to the lattice layer.
Reference is now made to Fig. 1 in which the operation of the collimating crystal 10 employing the diffraction phenomenon is illustrated. The collimating crystal 10 utilizes the Borrmann effect caused by the Bragg condition in crystals to project a beam of hard X-rays or gamma rays from a diffuse ray source. ' The Borrmann effect in crystals is also known as anomalous transmission. When the Bragg condition, that is the Bragg equation, is satisfied in dislocation-free crystals, the Borrmann effect is manifested as a drastic reduction (for example by a factor of 200) of the absorption coefficient. A reduction in the absorption coefficient means that more of the electromagnetic energy exits the crystal. The term "dislocation-free" refers to the absence of "dislocations" in the lattice structure. Dislocations are imperfections in the lattice that alter the geometric structure and adversely affect energy propagation therethrough. In Fig. 1, an incident ray 11 is shown entering the crystal 10 at an angle of incidence 13, or b, with respect to the lattice planes or layers 12 of the crystal 10. The lattice layers 12 are separated by the distance referred to above as the lattice constant or lattice spacing d or 14. When the Bragg condition is satisfied, the angle of incidence b, or 13, may also be referred to
as the Bragg angle. The Borrmann effect is demonstrated by the transmission of beams shown in positions 15, 17 and 19. The transmitted radiation is split into two equal intensity parts separated by the angle 2b . Beams at positions 15 and 17 are the anomalously-transmitted radiation. Those positions are known as the rearward diffracted beam and forward diffracted beam, respectively. The third component 19 is unaltered transmitted radiation. It is weak compared with the anomalously transmitted radiation. The angular width of the Borrmann effect is about 10*5 radians, or about one arc second. Therefore, the anomalous transmission of hard X-rays or gamma rays through a dislocation free crystal produces a very well collimated beam of radiation 11' . The above principles and phenomena are also utilized in the teachings of the invention directed to focusing hard X-rays and gamma rays. The teachings directed to the use of a focusing crystal are based upon a further phenomenon associated with the above Borrmann and Bragg principles, namely, that when a crystal is distorted the propagated X-radiation may produce a converging or diverging beam. The mechanical flexing of a crystal produces a cylindrically-focused beam. The crystal lattice may also be distorted by heating one end and cooling the other end of the crystal, or by mechanical force, such as the application of radial force on one end of the crystal. For a crystal 10 cm in length, " the effects produced would be small, that is, approximately 10'3 radians for a pressure of 1,000 atmospheres applied to one end of the crystal, or 10"4 radians for a 400 degree temperature difference
along the crystal. Another effective way to convergently or divergently focus short wavelength radiation is to produce a crystal with a varying lattice constant, or spacing between planes. Referring now to Fig. 2, therein is represented an example of a focusing crystal 20 which has a varying lattice constant over its length. Radiation entering a focusing crystal 20 according to the teachings herein emerges as either a diverging beam of radiation or a converging beam of radiation. The crystal 20 shown tapers from top to bottom, representing a decreasing lattice constant from top to bottom. Properly aligned radiation entering the top exits as a converging beam. Conversely, radiation entering the top of a crystal which tapers from bottom to top produces a diverging beam. The teachings of the invention may be illustrated using the substances silicon and germanium. The lattice constant of silicon is 5.43 Angstroms and the lattice constant of germanium is 5.66 Angstroms. Solid state solubility of germanium in silicon covers the complete range from 0% germanium to 100% germanium. In Fig. 1, the top of the crystal is represented as being composed of 100% germanium and, thus, 0% silicon. The bottom of the crystal is represented as being composed of 100% silicon, and, thus, 0% germanium. The concentration proportions vary continuously over the length of the crystal 20. By growing a crystal with a continuously varying concentration of silicon in germanium, the lattice constant varies by about 4%. If the crystal 20 has a linear concentration gradient of about 4% per cm, over the length of 10 cm the dimension of the crystal lattice would decrease by
about .04 cm. This would result in a convergence angle 25 of
0.04/10 = 4 milliradians. The crystal 20 thus has a focal length f of 1/0.004 = 250 cm. The diffraction limited size of the focal spot (at 250 cm) is given by the diffraction equation: (1.22) (lambda) s = ff
D where s is the diameter of the focal spot, 1.22 represents a proportionality constant, D is the diameter of the end of the crystal 20 which first receives radiation, lambda is the wavelength of radiation and f is the focal length. The following example illustrates the applicability of these teachings. 60 keV gamma rays from the decay of Am21 have a wavelength (lambda) of 0.17 Angstroms. The size of the focal spot for the crystal 20 illustrated having a diameter D of 2 cm would then be:
1.22 X 1.7 X 10"9 s = x 250
2
= 26 X 10"8 cm. This would be the typical size accuracy or definition of a nanoelectronic feature. Therefore, the focusing crystal 20 could be used to extend the range of lithography for electronics down into the nanometer range.
Referring now to Fig. 3, therein is schematically illustrated an apparatus for convergently focusing hard X-rays and gamma rays
30 in accordance with the teachings of the invention. A diffuse ray source 32 emits diffuse hard X-ray or gamma ray beams 11. A
8
collimating crystal 34, operating like the collimating crystal 10 described above propagates a collimated hard X-ray or gamma ray beam 11'. A mask 36 defining the circuit patter which is to placed upon a chip is positioned to receive the collimated beam 11*. The collimated radiation 11* ' which exits the mask now carries the image of the mask 36. The collimated beam 11' ' enters the focusing crystal 38. The focusing crystal 38 is a composite crystal having a lattice constant which decreases over the length of the crystal 38. A converging beam 11' ' ' , carrying the image of the mask, exits the focusing crystal 38. A wafer 39 which is to be manufactured into semiconductor chips is placed in the path of the converging beam 11' ' ' . The image of the mask which strikes the wafer 39 is a reduced version of the image which enters the focusing crystal 38 because of the convergence of the carrying radiation beam 11' ' ' . The reduced image irradiates the photosensitive layer 41 of the wafer 39 which is supported by a substrate 43. Conventional chip production methods may then be used to produce integrated circuits having the degree of miniaturization and definition made possible by the invention. The focusing crystal 20 or 38 can also receive radiation at its narrow, or smaller-lattice-structure, end. Radiation exiting the crystal 20 or 38 would then be diverging because of the dynamics described above.
As stated above, the lattice constant may be made to vary by several methods; however, the use of a composite-substance crystal is a simple, practical method.
As should be apparent from the foregoing specification, the invention is susceptible of being modified with various alterations and modifications which may differ from those which have been described in the preceding specification and description. Accordingly, the following claims are intended to cover all alterations and modifications which do not depart from the spirit and scope of the invention.
10
Claims
(1) An apparatus for focusing hard X-ray beams or gamma ray beams comprising: a dislocation-free crystal having a constant lattice constant over a length thereof, for receiving and collimating the hard X-ray beams or gamma ray beams; and a dislocation-free crystal having a lattice constant that decreases over a length thereof, aligned for receiving said collimated hard X-ray beams or gamma ray beams and propagating said collimated hard X-ray beams or gamma ray beams along said length thereof.
(2) The invention of claim 1, wherein said dislocation-free crystal having a constant lattice constant over a length thereof comprises a dislocation-free single-substance crystal having a constant lattice constant over a length thereof.
(3) The invention of claim 1, wherein said dislocation-free crystal having a lattice constant that decreases over a length thereof comprises a dislocation-free composite-substance crystal having a lattice constant that decreases over a length thereof.
(4) The invention of claim 3, wherein said dislocation-free composite-substance crystal having a lattice constant which decreases over a length thereof comprises a dislocation-free crystal composed of at least two crystalline substances with a linearly continuously-varying concentration of one of said at least two crystalline substances in an other of said at least two crystalline substances.
1 1
(5) The invention of claim 3, wherein said dislocation-free composite-substance crystal having a lattice constant which decreases over a length thereof comprises a dislocation-free crystal with a linearly continuously-varying concentration of silicon in germanium.
(6) The invention of claim 3, wherein said dislocation-free composite-substance crystal having a lattice constant which decreases over a length thereof comprises a dislocation-free silicon-germanium crystal wherein the proportion of germanium to silicon varies over a length of said silicon germanium crystal from about 100 percent germanium to about 100 percent silicon.
(7) The invention of claim 1, wherein said dislocation-free crystal having a lattice constant that decreases over a length thereof is aligned so that said collimated hard X-ray beams or gamma ray beams are received by an end of said dislocation-free crystal having a lattice constant that decreases over a length thereof, that has a greater lattice constant than an other exit end thereof.
(8) The invention of claim 1, further comprising means for projecting diffuse hard X-ray beams or gamma ray beams upon said dislocation-free crystal having a lattice constant that decreases over a length thereof.
(9) The invention of claim 1, further comprising means for interposing a mask between said dislocation-free crystal having a
12
constant lattice constant over a length thereof and said dislocation-free crystal having a lattice constant that decreases over a length thereof.
(10) The invention of claim 1, further comprising means for positioning a surface to receive a radiation which exits said dislocation-free crystal having a lattice constant that decreases over a length thereof.
(11) An apparatus for projecting a reduced image of an image defined by a mask onto a surface comprising: a dislocation-free single-substance crystal; means for projecting diffuse hard X-ray beams or gamma ray beams upon said dislocation-free single-substance crystal; a dislocation-free composite-substance crystal having a linearly- varying lattice constant along a length thereof, and having a lattice constant at an end thereof for receiving said hard X- ray beams or gamma ray beams which is greater than a lattice constant at an other end thereof from which said hard X-ray beams or gamma ray beams will exit, axially aligned for receiving said hard X-ray beams or gamma ray beams which exit said dislocation-free single-substance crystal; means for interposing a mask between said dislocation-free single- substance crystal and said dislocation-free composite substance crystal; and means for positioning the surface in a path of said hard X-ray beams or gamma ray beams which exit said dislocation-free composite
13
substance crystal.
(12) A method for convergently focusing an hard X-ray image or gamma ray image onto a surface comprising: directing diffuse hard X-ray beams or gamma ray beams through a dislocation-free single-substance crystal to produce a collimated hard X-ray beam or gamma ray beam, respectively; directing said collimated hard X-ray beam or gamma ray beam upon a dislocation-free composite-substance crystal having a lattice constant which decreases over a length thereof from an end having a higher lattice constant to an other end thereof having a lower lattice constant, wherein said collimated hard X-ray beam or gamma ray beam is directed upon said end having a higher lattice constant; interposing a mask between said dislocation-free single-substance crystal and said dislocation-free composite-substance crystal having a lattice constant which decreases over a length thereof; and positioning the surface in a path of radiation which exits said other end of said dislocation-free composite-substance crystal having a lower lattice constant.
(13) An apparatus for focusing hard X-rays or gamma rays comprising a crystal formed according to parameters to produce a lattice constant which decreases over a length thereof to create a focal spot having a diameter s at a focal length Jf defined in the equation
14
(1.22) (lambda) s __= ff
D where s is the diameter of the focal spot, 1.22 represents a proportionality constant, D is a diameter of an end of said crystal which receives the hard X-rays or gamma rays, lambda is a wavelength of the hard X-rays or gamma rays and f is the focal length of said crystal.
15
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930700900A KR950012546B1 (en) | 1991-07-26 | 1992-06-15 | Apparatus and method for focusing hard x-rays |
| JP5503545A JPH06502747A (en) | 1991-07-26 | 1992-06-15 | Device and method for focusing hard X-rays |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/736,153 US5210779A (en) | 1991-07-26 | 1991-07-26 | Apparatus and method for focusing hard x-rays |
| US736,153 | 1991-07-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1993003424A1 true WO1993003424A1 (en) | 1993-02-18 |
Family
ID=24958717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1992/005042 WO1993003424A1 (en) | 1991-07-26 | 1992-06-15 | Apparatus and method for focusing hard x-rays |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5210779A (en) |
| EP (1) | EP0550734A1 (en) |
| JP (1) | JPH06502747A (en) |
| KR (1) | KR950012546B1 (en) |
| CA (1) | CA2089557A1 (en) |
| TW (1) | TW207030B (en) |
| WO (1) | WO1993003424A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880467A (en) * | 1997-03-05 | 1999-03-09 | The United States Of America As Represented By The Secretary Of Commerce | Microcalorimeter x-ray detectors with x-ray lens |
| US6389100B1 (en) * | 1999-04-09 | 2002-05-14 | Osmic, Inc. | X-ray lens system |
| CZ299759B6 (en) * | 2007-07-20 | 2008-11-12 | Ceské vysoké ucení technické v Praze | Optical element for X-ray microscopy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0055077A2 (en) * | 1980-12-23 | 1982-06-30 | Kabushiki Kaisha Toshiba | System for transferring a fine pattern onto a target |
| DE3217235A1 (en) * | 1982-05-07 | 1983-11-24 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Method for generating a high-collimated X-ray beam by means of six-beam Borrmann defraction |
| US4945551A (en) * | 1985-07-19 | 1990-07-31 | Shimadzu Corporation | Soft X-ray lithographic system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4429411A (en) * | 1981-04-20 | 1984-01-31 | The United States Of America As Represented By The United States Department Of Energy | Instrument and method for focusing X-rays, gamma rays and neutrons |
| US5063586A (en) * | 1989-10-13 | 1991-11-05 | At&T Bell Laboratories | Apparatus for semiconductor lithography |
| US4987582A (en) * | 1989-10-19 | 1991-01-22 | Hughes Aircraft Company | X-ray fluorescence imaging of elements |
-
1991
- 1991-07-26 US US07/736,153 patent/US5210779A/en not_active Expired - Lifetime
-
1992
- 1992-06-15 KR KR1019930700900A patent/KR950012546B1/en active IP Right Grant
- 1992-06-15 JP JP5503545A patent/JPH06502747A/en active Pending
- 1992-06-15 CA CA002089557A patent/CA2089557A1/en not_active Abandoned
- 1992-06-15 WO PCT/US1992/005042 patent/WO1993003424A1/en not_active Application Discontinuation
- 1992-06-15 EP EP92916747A patent/EP0550734A1/en not_active Withdrawn
- 1992-09-16 TW TW081107310A patent/TW207030B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0055077A2 (en) * | 1980-12-23 | 1982-06-30 | Kabushiki Kaisha Toshiba | System for transferring a fine pattern onto a target |
| DE3217235A1 (en) * | 1982-05-07 | 1983-11-24 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Method for generating a high-collimated X-ray beam by means of six-beam Borrmann defraction |
| US4945551A (en) * | 1985-07-19 | 1990-07-31 | Shimadzu Corporation | Soft X-ray lithographic system |
Also Published As
| Publication number | Publication date |
|---|---|
| TW207030B (en) | 1993-06-01 |
| EP0550734A1 (en) | 1993-07-14 |
| US5210779A (en) | 1993-05-11 |
| KR950012546B1 (en) | 1995-10-18 |
| JPH06502747A (en) | 1994-03-24 |
| CA2089557A1 (en) | 1993-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7119953B2 (en) | Phase contrast microscope for short wavelength radiation and imaging method | |
| US5210779A (en) | Apparatus and method for focusing hard x-rays | |
| Cowan et al. | Performance of a high‐energy‐resolution, tender x‐ray synchrotron radiation beamline | |
| US4530734A (en) | Low energy ion etching | |
| Dangor et al. | Generation of uniform plasmas for beat wave experiments | |
| US20020042203A1 (en) | Method of forming a fine pattern | |
| Jaanimagi et al. | Optical fiducials for x‐ray streak cameras at LLE | |
| CA1224839A (en) | X-ray lithography | |
| US4701940A (en) | Linearly polarized X-ray patterning process | |
| Afanasenko et al. | Experimental study of the influence of multiple scattering on the parametric X-rays characteristics | |
| Mallozzi et al. | Laser-Produced Plasmas as an Alternative X-Ray Source for Synchrotron Radiation Research and for Microradiography | |
| Källne et al. | Properties and prospects of holographic transmission gratings | |
| US4665541A (en) | X-ray lithography | |
| JP2953420B2 (en) | Plane wave X-ray microbeam generation method and apparatus | |
| JPS61141135A (en) | X-ray lithographic device | |
| Renner et al. | Vertical dispersion methods in x-ray spectroscopy of high-temperature plasmas | |
| JP2023053904A (en) | Multi beam splitting and redirecting apparatus for tomographic apparatus, tomographic apparatus and method for creating three dimensional tomographic image of sample | |
| JPS59184526A (en) | Formation of pattern | |
| JPS59155920A (en) | X-ray exposure | |
| JPH03120714A (en) | X-ray exposure device | |
| CN117930599A (en) | Method and device for detecting reflective extreme ultraviolet photoresist | |
| Shevelko | High-efficiency hard x-ray spectrometer for sub-ps laser-produced plasma investigations | |
| Förster et al. | About the sensitivity of in situ diffraction measurements with X‐radiation of a laser‐produced plasma | |
| HACKNEY et al. | EIGHT YEARS OF ULTRAVIOLET SPECTRA OF THE VARIABLE BL, LACERTAE OBJECT PKS 2155–304 CM URRy* Space Telescope Science Institute Y. KoNDo | |
| JPH01307221A (en) | X-ray aligner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WWE | Wipo information: entry into national phase |
Ref document number: 2089557 Country of ref document: CA |
|
| AK | Designated states |
Kind code of ref document: A1 Designated state(s): CA JP KR |
|
| AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU MC NL SE |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 1992916747 Country of ref document: EP |
|
| WWP | Wipo information: published in national office |
Ref document number: 1992916747 Country of ref document: EP |
|
| WWW | Wipo information: withdrawn in national office |
Ref document number: 1992916747 Country of ref document: EP |