CN117930599A - Method and device for detecting reflective extreme ultraviolet photoresist - Google Patents
Method and device for detecting reflective extreme ultraviolet photoresist Download PDFInfo
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- CN117930599A CN117930599A CN202410209685.4A CN202410209685A CN117930599A CN 117930599 A CN117930599 A CN 117930599A CN 202410209685 A CN202410209685 A CN 202410209685A CN 117930599 A CN117930599 A CN 117930599A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 276
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000011161 development Methods 0.000 claims abstract description 45
- 238000012512 characterization method Methods 0.000 claims abstract description 37
- 238000002955 isolation Methods 0.000 claims abstract description 36
- 238000012360 testing method Methods 0.000 claims abstract description 36
- 238000001514 detection method Methods 0.000 claims abstract description 30
- 230000033001 locomotion Effects 0.000 claims description 101
- 230000002452 interceptive effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 15
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000010943 off-gassing Methods 0.000 description 7
- 238000004611 spectroscopical analysis Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to the technical field of photoetching, in particular to a method and a device for detecting reflective extreme ultraviolet photoresist, which comprise the following steps: the device comprises an extreme ultraviolet light source module, an interference light beam generation module, a photoresist exposure module, a deflation test system module, a vacuum system module, a vibration isolation system module and a development characterization system module. The method comprises the steps of generating multiple beams of extreme ultraviolet light through a light splitting element, enabling the multiple beams of light to interfere through a focusing reflector to generate interference patterns, then placing photoresist at the interference position of light for exposure, transferring the interference patterns onto the photoresist, developing the photoresist after exposure, and measuring key parameters after development. Changing the interference period by changing the interference angle; the gassing rate and the released gas composition were obtained by a gassing test system. The detection device has high integration level, can meet various scene demands and is used for researching and developing a novel extreme ultraviolet photoresist material system.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a reflection-based extreme ultraviolet photoresist detection device which can be used for researching and developing a novel extreme ultraviolet photoresist material system.
Background
Photolithography is an important step in the fabrication of large scale integrated circuit chips, and its precision determines the process and device performance of the chip. Photoresist is one of key materials for realizing fine pattern processing to prepare integrated circuits, and is one of core sub-technologies of photoetching technology. Extreme ultraviolet lithography is currently the most advanced technique for commercial semiconductor fabrication. The development of the extreme ultraviolet photoresist comprises the design of a main material and a formula, the preparation of the photoresist, the detection of the photoresist and the like. The detection of the extreme ultraviolet photoresist is an important link for realizing the optimization of the formula.
As the technology of extreme ultraviolet lithography continues to advance, the old material system of photoresist faces challenges. As the space for photolithography decreases to a few nanometers, the quantum random effect becomes more pronounced, and conventional polymer chemical amplification systems increasingly exhibit deficiencies in their on-line edge roughness. Development of new euv photoresist material systems is urgently needed. Unlike deep ultraviolet photoresist exposure mechanisms, photoresist exposure in extreme ultraviolet lithography involves complex physical and chemical processes. The single photon energy of extreme ultraviolet is high (up to 92 eV), and the sensitization mechanism of the extreme ultraviolet photoresist is not only the reaction with photons, but also the reaction with electrons. The extreme ultraviolet lithography technique requires exposure in an ultra-high vacuum environment (10 -6-10-7 Pa), and photoresist outgassing can cause vacuum damage, optical path and mask contamination.
The current extreme ultraviolet photoresist detection is as follows:
1. commercial extreme ultraviolet lithography machine: the price is high, and the pollution risk is introduced when the method is used for detecting novel extreme ultraviolet photoresist.
2. Electron beam lithography: the biggest difference in extreme ultraviolet lithography compared to the previous generations of lithography is that the initiated reaction is not only photons, but also the excitation of high energy secondary electrons. This is similar in mechanism to electron beam lithography, which can be used to simulate extreme ultraviolet lithography experimental results. The electron beam lithography technique is a 'direct writing' technique without a mask, and has the advantages of ultrahigh resolution, stable performance and the like. However, the efficiency of direct writing by electron beam is not as high as that of ultraviolet lithography.
3. Extreme ultraviolet interference lithography of synchrotron radiation: photoresist detection mainly utilizes two coherent extreme ultraviolet light beams to interfere and expose the photoresist. The grating mask consists of a beam splitting grating (which plays a role of beam splitting) and a through light shielding layer (which shields zero order light of an interference area). The interference method is not easy to change the interference period rapidly and efficiently, and has a limited adjustable period range.
The current method of generating interference patterns is mainly as follows. Interference patterns can be obtained with a laude mirror, but the mirror surface is vulnerable to photoresist contamination. The beam splitter is used for splitting light, and the reflector is used for focusing light on the photoresist to expose the photoresist at the interference position of the light, so that the interference pattern is transferred on the photoresist, but the interference period cannot be changed rapidly by the method. Thus, there is a need for an exposure method that effectively prevents the photoresist from contaminating the mirror surface. A method and apparatus for fast, simple, flexible adjustment of the interference period. Almost all materials are opaque under extreme ultraviolet light, and a transmission optical system used in deep ultraviolet lithography is no longer suitable for extreme ultraviolet lithography, so that designing reflection-based extreme ultraviolet photoresist detection is a technical problem to be considered. The gases released by the photoresist during the extreme ultraviolet exposure can cause pollution, so the extreme ultraviolet photoresist detection also needs to be subjected to a deflation test.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a reflective extreme ultraviolet photoresist detection device and method, which solve the problems that the mirror surface is easy to be polluted by photoresist and the interference period is quickly, simply and flexibly adjusted in the background art.
The invention adopts the technical scheme for realizing the aim:
A reflective extreme ultraviolet photoresist detection device, comprising: the device comprises an extreme ultraviolet light source module, an interference light beam generation module, a photoresist exposure module, a deflation test system module, a vacuum system module, a vibration isolation system module and a development characterization system module.
And the extreme ultraviolet light source module is used for changing the extreme ultraviolet exposure time.
The interference light beam generation module is used for splitting the extreme ultraviolet light generated by the extreme ultraviolet light source module into a plurality of beams of light, and generating an interference light beam by grating beam splitting or prism reflection beam splitting; the grating is used for acquiring required +/-1 grade light beams and shielding unnecessary 0 grade light beams; the prism is used for obtaining the interference light with the required number by changing the number of the prism faces.
The photoresist exposure module is used for focusing and interfering the multiple beams of light generated by the interference light beam generation module on the photoresist to be detected, so that the interference pattern is transferred onto the photoresist, and the photoresist exposure module is divided into a non-variable interference period mode and a variable interference period mode: the non-interference periodic mode comprises a focusing reflector (concave surface, cylindrical surface or Toroidal surface) and a photoresist sample fixing table for placing photoresist to be detected, wherein the focusing reflector is long focus, so that the exposure position is far away from the focusing reflector; the variable interference period mode comprises a focusing reflector, a photoresist sample fixing table for placing photoresist to be detected, and a reflector control system (the reflector control system is designed for a guide rail sliding block-carried reflector), wherein the focusing reflector is long focus, so that the exposure position is far away from the focusing reflector, and the reflector control system is used for controlling the position of the reflector, so that the propagation direction and the interference angle of an interference light beam are changed, and the period of a structure obtained on the photoresist is controlled.
The development and characterization system module after development is used for developing the exposed photoresist, obtaining the photoetching pattern of the extreme ultraviolet photoresist by utilizing characterization means such as a scanning electron microscope or an atomic force microscope, and the like, researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
The system also comprises a deflation test system module which is connected with the photoresist exposure module and is used for measuring the deflation rate and the gas composition of the gas generated during the exposure of the photoresist; the vacuum system enables the propagation of extreme ultraviolet light to be always in a vacuum environment; and the vibration isolation system module is used for carrying out vibration isolation treatment on the light source, interference and exposure of the extreme ultraviolet light.
On the other hand, the invention also provides a reflective extreme ultraviolet photoresist detection method, which is characterized by comprising the following steps:
controlling the propagation of the extreme ultraviolet light source to change the exposure time of the photoresist to be detected;
splitting the extreme ultraviolet light to form a plurality of beams of light;
the multiple beams of light are focused and interfered on the photoresist to be detected, so that an interference pattern is transferred onto the photoresist;
Developing the exposed photoresist, and measuring key parameters after development.
Further, the method is used for developing the exposed photoresist, obtaining the photoetching pattern of the extreme ultraviolet photoresist by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, researching the relation between the photoresist morphology and parameters such as exposure time, interference period and focal depth and obtaining key parameters such as line width, line edge roughness and the like.
Compared with the prior art, the invention has the beneficial effects that:
the reflection type optical path is adopted, and the problem that a transmission optical system is not suitable for extreme ultraviolet lithography is solved by utilizing the design of a focusing reflecting mirror (concave surface, cylindrical surface, toroidal surface or off-axis parabolic reflecting mirror) with a long focal length; and effectively prevent the chips and gases generated in the photoresist exposure process from polluting the optical element.
The invention adopts the combination design of the guide rail slide block carrying reflector and the off-axis parabolic reflector, and the interference angle is controllable, thereby realizing the interference period control; changing the propagation direction of the interference light beam and then the interference angle by changing the position of the reflecting mirror, and finally controlling the interference period; the interference period can be changed efficiently and quickly without changing the positions of components in the rear light path of the reflecting mirror.
The reflection type extreme ultraviolet photoresist detection device provided by the invention has the advantages of compact structure, simplicity in operation and high integration level, can meet the requirements of various scenes, is used for researching the influence of the deflation characteristic, the exposure time and the interference period of photoresist on key parameters, and is beneficial to the research and development of a novel extreme ultraviolet photoresist material system.
Drawings
FIG. 1 is a flow chart of an embodiment of an EUV photoresist detection apparatus according to the present invention;
FIG. 2 is a schematic diagram of an embodiment of an EUV photoresist detection device with a constant interference period (prism beam splitting);
FIG. 3 is a schematic diagram of an embodiment of an EUV photoresist detection device with a constant interference period (grating spectroscopy);
FIG. 4 is a schematic diagram of a multi-beam interference EUV photoresist detection device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of an embodiment of an EUV photoresist detection device (prism beam splitting) of the present invention based on a single focusing mirror with a fast adjustment of the interference period;
FIG. 6 is a schematic diagram of an embodiment of an EUV photoresist detection device capable of rapidly adjusting an interference period based on a single focusing mirror (grating spectroscopy);
FIG. 7 is a schematic diagram of an embodiment of an EUV photoresist detection device (prism beam splitting) with interference period fast adjustable based on two focusing mirrors according to the present invention;
FIG. 8 is a schematic diagram of an embodiment of an EUV photoresist detection device (grating spectroscopy) with interference period fast adjustable based on two focusing mirrors according to the present invention;
in the figure:
201-an extreme ultraviolet light source; 202-an electronic shutter; 203-a timer; 204-a prism; 205-focusing mirror (concave, cylindrical or Toroidal faces); 206-photoresist sample; 207-photoresist sample holding stage; 208-sample holder motorized motion control system; 209-a deflation test system; 210-a vacuum system; 211-vibration isolation system; 212-development and post-development characterization system.
301-An extreme ultraviolet light source; 302-an electronic shutter; 303-a timer; 304-grating; 305, light shield; 306-focusing mirror (concave, cylindrical or Toroidal faces); 307-photoresist sample; 308-a photoresist sample holding stage; 309-sample holder motorized motion control system; 310-deflation test system; 311-vacuum system; 312-vibration isolation system; 313-development and post-development characterization system.
401-An extreme ultraviolet light source; 402-electronic shutter; 403-timer; 404-prism; 405-Toroidal mirrors; 406-a photoresist sample; 407-photoresist sample holding stage; 408-an electric motion control system; 409-deflation test system; 410-a vacuum system; 411-vibration isolation system; 412-developing and post-development characterization system.
501-An extreme ultraviolet light source; 502-electronic shutter; 503-timer; 504-prisms; 505-a first mirror; 506-a second mirror; 507—a first rail; 508-a second rail; 509-a first slider; 510-a second slider; 511-a third slider; 512-off-axis parabolic reflector; 513-photoresist samples; 514-a photoresist sample holding stage; 515-a first motorized motion control system; 516-a second motorized motion control system; 517-a third electric motion control system; 518-a fourth electric motion control system; 519-deflation test system; 520-vacuum system; 521-vibration isolation systems; 522-develop and post-develop characterization system; 523-a first rail after movement; 524-a first slider after movement; 525-a post-movement first mirror; 526-a second slider after movement; 527-a second mirror after movement; 528-third slider after movement.
601-An extreme ultraviolet light source; 602-an electronic shutter; 603-a timer; 604-grating; 605-light block; 606—a first mirror; 607-a second mirror; 608—first rail; 609-a second rail; 610-a first slider; 611-a second slider; 612-third slider; 613-off-axis parabolic mirrors; 614-photoresist sample; 615-photoresist sample holding stage; 616—a first electric motion control system; 617-a second motorized motion control system; 618-a third electric motion control system; 619-a fourth electric motion control system; 620-a deflation test system; 621-a vacuum system; 622-vibration isolation system; 623-developing and post-developing characterization system; 624-a first guide rail after movement; 625-a first slider after movement; 626-a first mirror after movement; 627-a second slider after movement; 628-a second mirror after movement; 629-a third slider after movement.
701-An extreme ultraviolet light source; 702-an electronic shutter; 703-a timer; 704-a prism; 705-first mirror; 706-a second mirror; 707—a first rail; 708-a second rail; 709-a first slider; 710-a second slider; 711-third slider; 712-a first off-axis parabolic mirror; 713-a second off-axis parabolic mirror; 714-photoresist sample; 715-a photoresist sample holding stage; 716-a first motorized motion control system; 717-a second motorized motion control system; 718-a third electric motion control system; 719-fourth electric motion control system; 720-deflation test system; 721-vacuum system; 722-vibration isolation system; 723-develop and post-develop characterization system; 724-first guide rail after moving, 725-first slide after moving, 726-first mirror after moving, 727-second slide after moving, 728-second mirror after moving, 729-third slide after moving.
801-An extreme ultraviolet light source; an 802-electronic shutter; 803-timer; 804-grating; 805-light shield; 806-a first mirror; 807-a second mirror; 808-a first rail; 809—a second rail; 810-a first slider; 811-a second slider; 812-third slider; 813-a first off-axis parabolic mirror; 814-a second off-axis parabolic mirror; 815-photoresist sample; 816-photoresist sample holding stage; 817—a first electric motion control system; 818-a second motorized motion control system; 819-a third motorized motion control system; 820-fourth electric motion control system; 821-deflation test system; 822-a vacuum system; 823-vibration isolation systems; 824-develop and post-develop characterization system; 825-a first rail after movement; 826-a first slide after movement; 827-a first mirror after movement; 828-a second slider after movement; 829-a second mirror after movement; 830-a third slider after movement.
Detailed Description
The application will be further illustrated in the following examples and figures, which can be embodied in many different forms and should not be construed as limiting the scope of the application. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
FIG. 1 is a schematic diagram of an EUV photoresist detection apparatus according to an embodiment of the present invention. Comprising the following steps: the device comprises an extreme ultraviolet light source module, an interference light beam generation module, a photoresist exposure module, a deflation test system module, a vacuum system module, a vibration isolation system module and a development characterization system module. The ultraviolet light source module comprises an extreme ultraviolet light source, an electronic shutter and a timer, and the exposure time of the extreme ultraviolet light is changed through the electronic shutter and the timer. The interference beam generation module has two modes: grating beam splitting or prism reflection beam splitting. And splitting the light beams by using a grating, obtaining light beams (1 st order light) needing interference by using a reflection grating, and shielding the light beams (0 st order light) which are not needed. The prism reflects and splits the beam, and the required number of interference light is obtained by changing the number of the surfaces of the prism (2 beams of light are obtained by the triangular prism, and 4 beams of light are obtained by the rectangular pyramid). The photoresist exposure module is used for generating an interference pattern by interfering a plurality of beams of light through a focusing reflector, placing photoresist at the interference position of the light for exposure, and transferring the interference pattern onto the photoresist. There are 2 modes of implementation: a non-variable interference period and a variable interference period. The non-variable interference periodic device focuses the light beam generated in the interference light beam generating module at a position far away from the optical element through a focusing reflector (concave surface, cylindrical surface or Toroidal surface), and a photoresist sample is placed at the position, so that the aim of preventing chips and gas generated in the photoresist exposure process from polluting the optical element is fulfilled. The variable interference period device is provided with a mirror control system, and the position of the mirror is controlled to change the interference angle of light, thereby changing the interference period. The deflation test system obtains parameters such as deflation rate and the like by measuring the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
Fig. 2 is a schematic diagram of an embodiment of an euv photoresist detection apparatus with unchanged interference period (prism beam splitting) according to the present invention. The apparatus includes an extreme ultraviolet light source 201, an electronic shutter 202, a timer 203, a prism 204, a focusing mirror (concave, cylindrical or Toroidal faces) 205, a photoresist sample 206, a photoresist sample stage 207, a sample stage motorized motion control system 208, a outgassing test system 209, a vacuum system 210, a vibration isolation system 211, and a post-development and post-development characterization system 212. Wherein the extreme ultraviolet light source 201 is the light source used in the present invention. An electronic shutter 202 and timer 203 are used to control the irradiation time of the light source on the photoresist. The prism 204 is used to obtain a dual beam. Focusing mirror (concave, cylindrical or Toroidal) 205 focuses the incident interference beam. The photoresist sample 206 is fixed on a photoresist sample fixing stage 207. The sample holder motorized motion control system 208 controls the position of the photoresist sample holder 207. The deflation test system 209 obtains parameters such as deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 210. The above-described device is placed in the vibration isolation system 211. After exposure, the photoresist sample is removed from the photoresist sample holding stage and passed into a development and post-development characterization system 212.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the prism through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reflects 2 beams of light after reaching the prism. The interference beam is focused by a focusing mirror (concave, cylindrical or Toroidal surface) which focuses the incoming interference beam, and interference occurs in the photoresist sample, thereby transferring the interference pattern to the photoresist. The photoresist sample is placed such that its surface normal bisects the interference angle (θ). When the two interference light energies are equal, the interference pattern period (Λ) satisfies Λ=λ/2sin (θ/2), λ is the wavelength of light, and θ is the interference angle of the two interference light beams on the photoresist. The position of the photoresist sample fixing table is controlled by the sample fixing table electric motion control system, so that exposure is controlled at different photoresist positions. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
Fig. 3 is a schematic diagram of an embodiment of an euv photoresist detection apparatus with unchanged interference period (grating spectroscopy) according to the present invention. The apparatus includes an extreme ultraviolet light source 301, an electronic shutter 302, a timer 303, a grating 304, a light shield 305, a focusing mirror (concave, cylindrical or Toroidal faces) 306, a photoresist sample 307, a photoresist sample holder 308, a sample holder motorized motion control system 309, a outgassing test system 310, a vacuum system 311, a vibration isolation system 312, and a post-development and post-development characterization system 313. Wherein the extreme ultraviolet light source 301 is a light source used in the present invention. An electronic shutter 302 and timer 303 are used to control the irradiation time of the light source on the photoresist. The grating 304 is used to obtain multiple beams of light (+ -1 order light and 0 order light). The light shield 305 is used to shield the unwanted light beam (level 0 light). The focusing mirror (concave, cylindrical or Toroidal) 306 focuses the incident interference beam to the euv photoresist. The photoresist sample 307 is fixed on a photoresist sample fixing stage 308. The sample holder motorized motion control system 309 controls the position of the photoresist sample holder 308. The deflation test system 310 obtains parameters such as deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 311. The above-described devices are placed in a vibration isolation system 312. After exposure, the photoresist sample is removed from the photoresist sample holding stage into a develop and post develop characterization system 313.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the grating through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reflects different orders of light (1 st order light and 0 st order light) after reaching the grating. Unwanted light beams (0 th order light) are blocked by the light shield. The interference beam is focused by a focusing mirror (concave, cylindrical or Toroidal surface) which focuses the incoming interference beam, and interference occurs in the photoresist sample, thereby transferring the interference pattern to the photoresist. The photoresist sample is placed such that its surface normal bisects the interference angle (θ). The two interference light energy are equal, the interference pattern period (lambda) satisfies lambda = lambda/2 sin (theta/2), lambda is the wavelength of light, and theta is the interference angle of the two interference light beams on the photoresist. The position of the photoresist sample fixing table is controlled by the sample fixing table electric motion control system, so that exposure is controlled at different photoresist positions. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
FIG. 4 is a schematic diagram of a multi-beam interference EUV photoresist detection device according to an embodiment of the present invention. The apparatus includes an extreme ultraviolet light source 401, an electronic shutter 402, a timer 403, a prism 404, toroidal mirrors 405, a photoresist sample 406, a photoresist sample stage 407, a sample stage motorized motion control system 408, a outgassing test system 409, a vacuum system 410, a vibration isolation system 411, and a post-development and post-development characterization system 412. Wherein the extreme ultraviolet light source 401 is a light source used in the present invention. An electronic shutter 402 and timer 403 are used to control the irradiation time of the light source on the photoresist. The prism 404 is used to obtain multiple beams of light. Toroidal mirror 405 focuses the incident interference beam. The photoresist sample 406 is fixed on a photoresist sample fixing stage 407. The sample holder motorized motion control system 408 controls the position of the photoresist sample holder 407. The deflation test system 409 obtains parameters such as the deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 410. The above-described device is placed in a vibration isolation system 411. After exposure, the photoresist sample is removed from the photoresist sample holding stage into a development and post-development characterization system 412.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the prism through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reflects 4 beams of light after reaching the prism. The interference light beam is focused on a Toroidal mirror, and the Toroidal mirror focuses the entered interference light beam, so that interference occurs in a photoresist sample, and an interference pattern is transferred to the photoresist. The position of the photoresist sample fixing table is controlled by the sample fixing table electric motion control system, so that exposure is controlled at different photoresist positions. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
Fig. 5 is a schematic diagram of an embodiment of an euv photoresist detection apparatus (prism beam splitting) of the present invention based on a single focusing mirror with a fast adjustment of the interference period. The apparatus includes an extreme ultraviolet light source 501, an electronic shutter 502, a timer 503, a prism 504, a first mirror 505, a second mirror 506, a first rail 507, a second rail 508, a first slider 509, a second slider 510, a third slider 511, an off-axis parabolic mirror 512, a photoresist sample 513, a photoresist sample mount 514, a first motorized motion control system 515, a second motorized motion control system 516, a third motorized motion control system 517, a fourth motorized motion control system 518, a outgassing test system 519, a vacuum system 520, a vibration isolation system 521, and a post-development and post-development characterization system 522; the post-movement first rail 523, the post-movement first slider 524, the post-movement first mirror 525, the post-movement second slider 526, the post-movement second mirror 527, and the post-movement third slider 528. Wherein the extreme ultraviolet light source 501 is the light source used in the present invention. An electronic shutter 502 and a timer 503 are used to control the irradiation time of the light source on the photoresist. The prism 504 is used to obtain a dual beam. The first mirror 505 is fixed to the second slider 510 and placed on the first rail 507, and the second mirror 506 is fixed to the third slider 511 and placed on the first rail 507. The first guide 507 is fixed to the first slider 509 and placed on the second guide 508. The position between the first guide 507 and the second guide 508 is vertical. The first reflecting mirror 505 and the second reflecting mirror 506 are symmetrically distributed at both sides of the second guide rail 508. The light rays emitted by the first reflecting mirror 505 and the second reflecting mirror 506 are parallel to the second guide rail 508, and are symmetrically distributed on two sides of the second guide rail 508. The off-axis parabolic mirror 512 focuses the parallel incident interference beam. The photoresist sample 513 is fixed on a photoresist sample fixing stage 514. The first motorized motion control system 515 controls the position of the first slider 509, the second motorized motion control system 516 controls the position of the second slider 510, the third motorized motion control system 517 controls the position of the third slider 511, and the fourth motorized motion control system 518 controls the position of the photoresist sample holder 514. The deflation test system 519 obtains parameters such as deflation rate by detecting the change of the pressure of the gas in the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 520. The above-described device is placed in a vibration isolation system 521. After exposure, the photoresist sample is removed from the photoresist sample holding stage into a develop and post develop characterization system 522.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the prism through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reaches the prism and then reflects 2 beams of light, and the beams of light are parallel to the direction of the second guide rail after passing through the reflecting mirror and are symmetrically distributed on two sides of the second guide rail. The parallel interference light beams reach the off-axis parabolic reflector, the off-axis parabolic reflector focuses the entered interference light beams, interference occurs in the photoresist sample, and the interference pattern is transferred to the photoresist. The position of the reflector is adjusted by moving the sliding block for fixing the reflector, so that the interference angle of the interference light beam on the photoresist is changed, and different interference periods are obtained. The photoresist sample is placed such that its upper surface normal bisects the interference angle (θ). The two beams of interference light have equal energy, and the interference pattern period (lambda) satisfies lambda=lambda/2 sin (theta/2), lambda is the wavelength of light, and theta is the interference angle of the interference light beam on the photoresist. Meanwhile, as different interference angles change, the focal depth also changes. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
The interference period is realized by changing the positions of the two reflectors by moving the slide block so as to change the interference angle of the light beam on the photoresist, and the specific implementation steps are as follows. The positions of the first mirror 505 and the second mirror 506 can be adjusted simultaneously by first moving the first slider 509 and the first guide rail 507, then the position of the first mirror 505 is adjusted by moving the second slider 510, and finally the position of the second mirror 506 is adjusted by moving the third slider 511. The post-movement first rail 523, the post-movement first slider 524, the post-movement first mirror 525, the post-movement second slider 526, the post-movement second mirror 527, and the post-movement third slider 528. The interference beams are kept parallel to each other and the second guide rail 508 after movement, and are symmetrically distributed on both sides of the second guide rail 508. Incident on off-axis parabolic mirror 512, ultimately changes the interference angle incident on the photoresist (from θ 1 to θ 2), thereby changing the interference period.
Fig. 6 is a schematic diagram (grating spectroscopy) of an embodiment of an euv photoresist detection apparatus of the present invention based on a single focusing mirror with a fast adjustment of the interference period. The apparatus includes an extreme ultraviolet light source 601, an electronic shutter 602, a timer 603, a grating 604, a light shield 605, a first mirror 606, a second mirror 607, a first rail 608, a second rail 609, a first slider 610, a second slider 611, a third slider 612, an off-axis parabolic mirror 613, a photoresist sample 614, a photoresist sample mount 615, a first motorized motion control system 616, a second motorized motion control system 617, a third motorized motion control system 618, a fourth motorized motion control system 619, a outgassing test system 620, a vacuum system 621, a vibration isolation system 622, and a post-develop and post-develop characterization system 623. A first guide 624 after movement, a first slider 625 after movement, a first mirror 626 after movement, a second slider 627 after movement, a second mirror 628 after movement, and a third slider 629 after movement. Among them, the extreme ultraviolet light source 601 is a light source used in the present invention. An electronic shutter 602 and timer 603 are used to control the irradiation time of the light source on the photoresist. The grating 604 is used to obtain multiple beams of light. The light shield 605 is used to shield unwanted light beams. The first mirror 606 is fixed to the second slider 611 on the first rail 608, and the second mirror 607 is fixed to the third slider 612 on the first rail 608. The first rail 608 is fixed to the first slider 610 and is placed on the second rail 609. The position between the first rail 608 and the second rail 609 is vertical. The first mirror 606 and the second mirror 607 are symmetrically arranged on both sides of the second rail 609. The light rays emitted through the first mirror 606 and the second mirror 607 are parallel to each other and symmetrically distributed on both sides of the second rail 609. The off-axis parabolic mirror 613 focuses the parallel incident interference beam. The photoresist sample 614 is fixed on a photoresist sample holder 615. The first electrical motion control system 616 controls the position of the first slider 610, the second electrical motion control system 617 controls the position of the second slider 611, the third electrical motion control system 618 controls the position of the third slider 612, and the fourth electrical motion control system 619 controls the position of the photoresist sample holder 615. The deflation test system 620 obtains parameters such as the deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system 621. The above-described device is placed in a vibration isolation system 622. After exposure, the photoresist sample is removed from the photoresist sample holding stage and enters the post-development characterization system 623.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the grating through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reflects different orders of light (1 st order light and 0 st order light) after reaching the grating. Unwanted light beams (0 th order light) are blocked by the light shield. Then each interference beam is parallel to the direction of the second guide rail after passing through the reflecting mirror, and is symmetrically distributed on two sides of the second guide rail. The parallel interference light beams reach the off-axis parabolic reflector, the off-axis parabolic reflector focuses the entered interference light beams, interference occurs in the photoresist sample, and the interference pattern is transferred to the photoresist. The position of the reflector is adjusted by moving the sliding block for fixing the reflector, so that the interference angle of the interference light beam on the photoresist is changed, and different interference periods are obtained. The photoresist sample is placed such that its upper surface normal bisects the interference angle (θ). The two interference light energy are equal, the interference pattern period (lambda) satisfies lambda = lambda/2 sin (theta/2), lambda is the wavelength of light, and theta is the interference angle of the two interference light beams on the photoresist. Meanwhile, as different interference angles change, the focal depth also changes. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
The interference period is realized by changing the positions of the two reflectors by moving the slide block so as to change the interference angle of the light beam on the photoresist, and the specific implementation steps are as follows. The positions of the first mirror 606 and the second mirror 607 can be adjusted simultaneously by first moving the first slider 610 and the first rail 608, then the position of the first mirror 606 is adjusted by moving the second slider 611, and finally the position of the second mirror 607 is adjusted by moving the third slider 612. A first guide 624 after movement, a first slider 625 after movement, a first mirror 626 after movement, a second slider 627 after movement, a second mirror 628 after movement, and a third slider 629 after movement. The interference beams remain parallel to each other and to the second rail 609 after movement and are symmetrically distributed on both sides of the second rail 609. Incident on the off-axis parabolic mirror 613, ultimately changes the interference angle incident on the photoresist (from θ 1 to θ 2), thereby changing the interference period.
Fig. 7 is a schematic diagram of an embodiment of an euv photoresist detecting apparatus (prism beam-splitting) of the present invention based on two focusing mirrors capable of rapidly adjusting the interference period. The apparatus includes an extreme ultraviolet light source 701, an electronic shutter 702, a timer 703, a prism 704, a first mirror 705, a second mirror 706, a first rail 707, a second rail 708, a first slider 709, a second slider 710, a third slider 711, a first off-axis parabolic mirror 712, a second off-axis parabolic mirror 713, a photoresist sample 714, a photoresist sample mount 715, a first motorized motion control system 716, a second motorized motion control system 717, a third motorized motion control system 718, a fourth motorized motion control system 719, a outgassing test system 720, a vacuum system 721, a vibration isolation system 722, and a post-development and post-development characterization system 723. A post-movement first guide 724, a post-movement first slider 725, a post-movement first mirror 726, a post-movement second slider 727, a post-movement second mirror 728, and a post-movement third slider 729. The extreme ultraviolet light source 701 is a light source used in the present invention. An electronic shutter 702 and timer 703 are used to control the irradiation time of the light source on the photoresist. The prism 704 is used to obtain a double beam of light. The first mirror 705 is fixed to the second slider 710 and placed on the first rail 707, and the second mirror 706 is fixed to the third slider 711 and placed on the first rail 707. The first rail 707 is fixed to the first slider 709 and is disposed on the second rail 708. The position between the first rail 707 and the second rail 708 is vertical. The first mirror 705 and the second mirror 706 are symmetrically disposed on both sides of the second rail 708. The light rays emitted by the first reflecting mirror 705 and the second reflecting mirror 706 are parallel to the direction of the second guide rail 708, and are symmetrically distributed on two sides of the second guide rail 708. The parabolic curves of the first off-axis parabolic mirror 712 and the second off-axis parabolic mirror 713 are the same, but the off-axis angles are different. The off-axis parabolic mirror focuses the parallel incident interference beam. The photoresist sample 714 is fixed on a photoresist sample fixing stage 715. The first motorized motion control system 716 controls the position of the first slider 709, the second motorized motion control system 717 controls the position of the second slider 710, the third motorized motion control system 718 controls the position of the third slider 711, and the fourth motorized motion control system 719 controls the position of the photoresist sample holding stage 715. The deflation test system 720 obtains parameters such as deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 721. The device is placed in a vibration isolation system 722. After exposure, the photoresist sample is removed from the photoresist sample holding stage and passed into a development and post-development characterization system 723.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the prism through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The light reaches the prism and then reflects 2 beams of light, and the beams of light are parallel to the direction of the second guide rail after passing through the reflecting mirror and are symmetrically distributed on two sides of the second guide rail. The parallel interference light beams reach the off-axis parabolic reflector, the off-axis parabolic reflector focuses the entered interference light beams, interference occurs in the photoresist sample, and the interference pattern is transferred to the photoresist. The position of the reflector is adjusted by moving the sliding block for fixing the reflector, so that the interference angle of the interference light beam on the photoresist is changed, and different interference periods are obtained. The photoresist sample is placed such that its surface normal bisects the interference angle (θ). The two beams of interference light have equal energy, and the interference pattern period (lambda) satisfies lambda=lambda/2 sin (theta/2), lambda is the wavelength of light, and theta is the interference angle of the interference light beam on the photoresist. Meanwhile, as different interference angles change, the focal depth also changes. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
The interference period is realized by changing the positions of the two reflectors by moving the slide block so as to change the interference angle of the light beam on the photoresist, and the specific implementation steps are as follows. The position of the first mirror 705 and the second mirror 706 can be adjusted simultaneously by first moving the first slide 709 and the first guide 707, then by moving the second slide 710, and finally by moving the third slide 711. A post-movement first guide 724, a post-movement first slider 725, a post-movement first mirror 726, a post-movement second slider 727, a post-movement second mirror 728, and a post-movement third slider 729. The interference beams remain parallel to each other and to the second track 708 after movement and are symmetrically distributed on both sides of the second track 708. Incident on off-axis parabolic mirror 712 and off-axis parabolic mirror 713 ultimately changes the interference angle incident on the photoresist (from θ 1 to θ 2), thereby changing the interference period.
Fig. 8 is a schematic diagram (grating spectroscopy) of an embodiment of an euv photoresist detection apparatus of the present invention based on two focusing mirrors capable of rapidly adjusting the interference period. The apparatus includes an extreme ultraviolet light source 801, an electronic shutter 802, a timer 803, a grating 804, a light shield 805, a first mirror 806, a second mirror 807, a first rail 808, a second rail 809, a first slider 810, a second slider 811, a third slider 812, a first off-axis parabolic mirror 813, a second off-axis parabolic mirror 814, a photoresist sample 815, a photoresist sample mount 816, a first motorized motion control system 817, a second motorized motion control system 818, a third motorized motion control system 819, a fourth motorized motion control system 820, a deflation test system 821, a vacuum system 822, a vibration isolation system 823, and a post-development and post-development characterization system 824; a first post-movement rail 825, a first post-movement slide 826, a first post-movement mirror 827, a second post-movement slide 828, a second post-movement mirror 829, and a third post-movement slide 830. Among them, the extreme ultraviolet light source 801 is a light source used in the present invention. An electronic shutter 802 and a timer 803 are used to control the irradiation time of the light source on the photoresist. The grating 804 is used to obtain multiple beams of light. The light block 805 is used to block unwanted light beams. The first mirror 806 is fixed to the second slider 811 and placed on the first rail 808, and the second mirror 807 is fixed to the third slider 812 and placed on the first rail 808. The first rail 808 is fixed to the first slider 810 and is disposed on the second rail 809. The position between the first rail 808 and the second rail 809 is perpendicular. The first mirror 806 and the second mirror 807 are symmetrically distributed on both sides of the second rail 809. The light rays emitted through the first reflecting mirror 806 and the second reflecting mirror 807 are parallel to the direction of the second guide rail 809 and are symmetrically distributed on both sides of the second guide rail 809. The parabolic curves of the first off-axis parabolic mirror 813 and the second off-axis parabolic mirror 814 are the same, but the off-axis angles are different. The off-axis parabolic mirror focuses the parallel incident interference beam. The photoresist sample 815 is fixed on a photoresist sample fixing stage 816. The first motorized motion control system 817 controls the position of the first slider 810, the second motorized motion control system 818 controls the position of the second slider 811, the third motorized motion control system 819 controls the position of the third slider 812, and the fourth motorized motion control system 820 controls the position of the photoresist sample holding station 816. The deflation test system 821 obtains parameters such as deflation rate by detecting the change of the pressure of the gas in the vacuum chamber; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, propagation, and photoresist exposure are all placed in a vacuum system 822. The above-described device is placed in the vibration isolation system 823. After exposure, the photoresist sample is removed from the photoresist sample holding stage and passed to a develop and develop post characterization system 824.
The working flow of the device is as follows: the extreme ultraviolet light source reaches the grating through the electronic shutter. The timer controls the opening and closing of the electronic shutter, thereby controlling the light irradiation time. The extreme ultraviolet light reflects different orders of light (1 st order light and 0 st order light) after reaching the grating. Unwanted light beams (0 th order light) are blocked by the light shield. Then each interference beam is parallel to the direction of the second guide rail after passing through the reflecting mirror, and is symmetrically distributed on two sides of the second guide rail. The parallel interference light beams pass through the off-axis parabolic reflector, the off-axis parabolic reflector focuses the entered interference light beams, interference occurs in the photoresist sample, and the interference pattern is transferred to the photoresist. The position of the reflector is adjusted by moving the sliding block for fixing the reflector, so that the interference angle of the interference light beam on the photoresist is changed, and different interference periods are obtained. The photoresist sample is placed such that its surface normal bisects the interference angle (θ). The two beams of interference light have equal energy, and the interference pattern period (lambda) satisfies lambda=lambda/2 sin (theta/2), lambda is the wavelength of light, and theta is the interference angle of the interference light beam on the photoresist. Meanwhile, as different interference angles change, the focal depth also changes. The deflation test system obtains parameters such as deflation rate and the like by detecting the change of the gas pressure of the vacuum cavity; the released gas component was analyzed by mass spectrometer. The extreme ultraviolet light source, the propagation, and the photoresist exposure are all placed in a vacuum system. The device is placed in a vibration isolation system. After exposure, the photoresist sample was removed from the photoresist sample holder and developed. After development, the photoetching pattern of the extreme ultraviolet photoresist is obtained by utilizing a scanning electron microscope or an atomic force microscope and other characterization means, and the method is used for researching the relation between the photoresist morphology and parameters such as exposure time, interference period, focal depth and the like, and obtaining key parameters such as line width, line edge roughness and the like.
The interference period is realized by changing the positions of the two reflectors by moving the slide block so as to change the interference angle of the light beam on the photoresist, and the specific implementation steps are as follows. The positions of the first mirror 806 and the second mirror 807 can be adjusted simultaneously by first moving the first slider 810 and the first guide rail 808, then adjusting the position of the first mirror 806 by moving the second slider 811, and finally adjusting the position of the second mirror 807 by moving the third slider 812. A first post-movement rail 825, a first post-movement slide 826, a first post-movement mirror 827, a second post-movement slide 828, a second post-movement mirror 829, and a third post-movement slide 830. The interference beams remain parallel to each other and to the second track 809 after movement and are symmetrically distributed on both sides of the second track 809. Incident on off-axis parabolic mirror 813 and off-axis parabolic mirror 814 ultimately change the interference angle incident on the photoresist (from θ 1 to θ 2), thereby changing the interference period.
The invention provides a method and a device for detecting reflective extreme ultraviolet photoresist. The focusing reflector with a proper long focal length is selected, so that the distance between the photoresist and the optical element can be effectively controlled, and pollution is avoided. The interference period control is changed by combining the design of the guide rail slide block carrying reflector and the off-axis parabolic reflector. But the device is not only limited to extreme ultraviolet wavelength, but also applicable to ultraviolet, visible light and infrared wavelength, and also applicable to the application requiring interference. In addition, the reflective photoresist detection system of the present invention includes, but is not limited to, the above structures, which include all combinations that can produce the same optical path.
Claims (10)
1. The utility model provides a reflection type extreme ultraviolet photoresist detection device which characterized in that includes:
The extreme ultraviolet light source module is used for changing the extreme ultraviolet exposure time;
The interference light beam generation module is used for splitting the extreme ultraviolet light generated by the extreme ultraviolet light source module into a plurality of beams of light;
The photoresist exposure module is used for focusing and interfering the multiple beams of light generated by the interference light beam generation module on the photoresist to be detected so as to transfer the interference pattern onto the photoresist;
and the development and post-development characterization system module is used for developing the exposed photoresist and measuring key parameters after development.
2. The device of claim 1, wherein the interference beam generating module comprises a grating or a prism, wherein the grating is used for obtaining a required ± 1-order beam and shielding an unnecessary 0-order beam; the prism is used for obtaining the interference light with the required number by changing the number of the prism faces.
3. The apparatus of claim 1, wherein the photoresist exposure module is in a non-variable interference period mode, and comprises a focusing mirror and a photoresist sample holder for placing the photoresist to be detected, and wherein the focusing mirror is focused in a long focus so that an exposure position is far away from the focusing mirror.
4. The apparatus of claim 3, wherein the focusing mirror is concave, cylindrical or Toroidal.
5. The apparatus according to claim 1, wherein the photoresist exposure module is in a variable interference period mode, and comprises a focusing mirror, a photoresist sample fixing table on which a photoresist to be detected is placed, and a mirror control system, wherein the focusing mirror is a long focus so that an exposure position is far away from the focusing mirror, and the mirror control system is used for controlling the position of the mirror so as to change a propagation direction and an interference angle of an interference beam, and further control a period of a structure obtained on the photoresist.
6. The apparatus of claim 5, wherein the mirror and mirror control system comprises: the first mirror, the second mirror, the first guide rail, the second guide rail, the first sliding block, the second sliding block, the third sliding block, the first electric motion control system, the second electric motion control system, the third electric motion control system and the fourth electric motion control system; the position between the first guide rail and the second guide rail is vertical; the first guide rail is fixed on the first sliding block and is arranged on the second guide rail; the first reflecting mirror is fixed on the second sliding block and is arranged on the first guide rail, and the second reflecting mirror is fixed on the third sliding block and is arranged on the first guide rail; the first electric motion control system controls the position of the first sliding block, the second electric motion control system controls the position of the second sliding block, the third electric motion control system controls the position of the third sliding block, and the fourth electric motion control system controls the position of the photoresist sample fixing table; the positions of the first reflecting mirror and the second reflecting mirror can be adjusted simultaneously by moving the first sliding block, the position of the first reflecting mirror can be adjusted by moving the second sliding block, and the position of the second reflecting mirror can be adjusted by moving the third sliding block; after adjustment, the first reflecting mirror and the second reflecting mirror are kept symmetrically distributed on two sides of the second guide rail; after moving, the interference beams are kept parallel to the direction of the second guide rail and symmetrically distributed on two sides of the second guide rail; the focusing mirror is an off-axis parabolic mirror.
7. The reflective euv photoresist detection apparatus of claim 1, further comprising:
and the deflation test system module is connected with the photoresist exposure module and is used for measuring the deflation rate and the gas composition of the gas generated during the photoresist exposure.
And the vacuum system module is respectively connected with the extreme ultraviolet light source module, the interference light beam generation module and the photoresist exposure module, so that the propagation of the extreme ultraviolet light is always in a vacuum environment.
8. The device of any one of claims 1-7, further comprising a vibration isolation system module for performing vibration isolation treatment on the light source, interference, and exposure of the euv light.
9. The method for detecting the reflective extreme ultraviolet photoresist is characterized by comprising the following steps of:
controlling the propagation of the extreme ultraviolet light source to change the exposure time of the photoresist to be detected;
splitting the extreme ultraviolet light to form a plurality of beams of light;
the multiple beams of light are focused and interfered on the photoresist to be detected, so that an interference pattern is transferred onto the photoresist;
Developing the exposed photoresist, and measuring key parameters after development.
10. The method for detecting the reflective extreme ultraviolet photoresist according to claim 9, wherein the method is used for developing the exposed photoresist, obtaining the photoresist pattern of the extreme ultraviolet photoresist by using a characterization means such as a scanning electron microscope or an atomic force microscope, researching the relation between the photoresist morphology and parameters such as exposure time, interference period and focal depth, and obtaining key parameters such as line width and line edge roughness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202410209685.4A CN117930599A (en) | 2024-02-26 | 2024-02-26 | Method and device for detecting reflective extreme ultraviolet photoresist |
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| CN202410209685.4A CN117930599A (en) | 2024-02-26 | 2024-02-26 | Method and device for detecting reflective extreme ultraviolet photoresist |
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