WO1991005073A1 - Procede et dispositif de fabrication de couches minces - Google Patents

Procede et dispositif de fabrication de couches minces Download PDF

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Publication number
WO1991005073A1
WO1991005073A1 PCT/US1990/005431 US9005431W WO9105073A1 WO 1991005073 A1 WO1991005073 A1 WO 1991005073A1 US 9005431 W US9005431 W US 9005431W WO 9105073 A1 WO9105073 A1 WO 9105073A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
anode
metal plasma
beam generator
plasma beam
Prior art date
Application number
PCT/US1990/005431
Other languages
English (en)
Inventor
Ian G. Brown
Robert A. Macgill
James E. Galvin
David F. Ogletree
Miquel Salmeron
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Publication of WO1991005073A1 publication Critical patent/WO1991005073A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/44—Plasma torches using an arc using more than one torch

Definitions

  • the present invention relates to a novel device for creating thin metallic films on a substrate.
  • Thin film fabrication is very important in the scientific research and commercial applications.
  • thin films may be applied to epitaxy, integrated circuit fabrication, x-ray optics, magnetic recording media, mechanical property studies, to name a few in general, the term "thin film” is understood to mean a film of a solid substance of a thickness less than about 1 micron which is formed on a substrate material. In general, the film material is different from the substrate material.
  • Metallic thin films constitute a large portion of existing thin film applications.
  • Prior art means for preparing metallic thin films have included evaporation from a source of the required material that is heated by any number of different means. Also, plasma or ion beam sputtering from a target has been used. However such methods of thin film fabrication are generally large and expensive.
  • PVD Physical vapor deposition
  • a simple, efficient, and accurate device for forming metallic thin film layers on a substrate would be a great advance in at least the metallurgical, electronic, and transportation fields.
  • the device of the present invention utilizes a metal plasma beam generator which includes a unit having an anode, a cathode of the film material to be deposited on the substrate, and a trigger electrode.
  • Controls means such as a pulse generator, repeatedly fires the trigger electrode and successive metal plasma streams of cathodic material of distinct quantity and energy are produced.
  • the arc or discharge forms between the cathode and anode to produce the plasma stream which is directed through the anode orifice toward the substrate.
  • Such orifice may be sized to focus the plasma beam on the substrate.
  • Holding means is employed to support the substrate at predetermined place apart from the plasma beam generator unit. Means is also included for directing the successive metal plasma streams of cathodic material onto the substrate. Such directioning means is often achieved by axial alignment between the substrate anode, which may include a orifice, and the cathode.
  • a vacuum chamber envelope the plasma beam generator unit as well as the substrate found therein.
  • the device of the present invention may also include mea ⁇ sfor applying a magnetic field to the plasma streams leaving the metal plasma beam generating unit.
  • a magnetic field may externalize in a multiplicity of electrical conduits wrapped or turned about the exterior of the metal plasma beam generator.
  • the magnetic field formed by this structure may also be pulsed with the arc current.
  • the anode which forms the metal vapor vacuum arc positions a certain distance from the cathode.
  • the anode also may include an anode plate having a orifice which would determine the transverse dimension of the beam.
  • two or more units may be placed side-by-side, each having cathodes of different materials.
  • multiple units may be pulsed in turn or alternately to produce interleaved thin layers of different materials originating with the cathodes of the multiple units. It may be apparent that a novel and useful device for creating a metallic thin ilm on a substrate has been described.
  • a further object of the present invention is to provide a device for creating metallic thin films on a substrate which are of very high quality and usable for integrated circuits.
  • FIG. 1 is a sectional view of a metal plasma beam generator usable with the device of the present invention.
  • FIG. 2 is an enlarged end view of the device of the present invention taken along line 2-2 of FIG. l and further illustrating a portion of the support structure in phantom.
  • FIG. 3 is a front elevation view of an embodiment of the present invention using outlined multiple ion beam generator units.
  • FIG. 4 is a schematic view of the electrical system employed to pulse the ion beam generator units of the present invention.
  • FIG. 5 is a schematic view of implantation of ions in a substrate.
  • FIG. 6 is a schematic view of the formation of single or multiple thin film layers on a substrate.
  • FIG. 7 is a schematic view of the electrical biasing of the substrate used in the present invention.
  • FIG. 8 is a graph of an experiment resulting in a multiple layer film of yttrium and cobalt on a silicon substrate, described in detail in EXAMPLE II hereinafter.
  • the plasma generator 10 includes a one of its elements a plasma source or unit 12.
  • Unit 12 is provided with a cathode 14 which is spaced from an anode 16.
  • Cathode 14 is typically composed of the metallic material which is to be deposited on substrate 18, FIG. 3, which will be described in detail hereinafter.
  • cathode may be a metallic element such as cobalt, yttrium. Suffice it to say, cathode 14 may also be composed of a metallic compound or alloy as long as such composition is electrically conductive.
  • Rod 20 threads into cathode 14 and is held to connector block 22 by set screw 24.
  • Connector 26 threads into connector block 22 and serves as the terminus for negative electrical biasing of cathode 14.
  • Insulator tube 28 which may be formed of alumina, fits over cathode 14. It should be noted that cathode 14 and rod 20 slip in and out of insulator tube 28 to facilitate the replacement of cathode 14. Tube 28 also fits within cavity 30 of connector block 22.
  • Trigger electrode 32 is formed generally concentrically relative to insulator tube 28 an cathode 14, FIG. 2.
  • Insulator bushing 34 and conductive support collar 36 complete the formation of plasma source unit 12. Support collar 36 serves as a base for the mounting of anode 16 by the way of plurality of set screws 38. It should be noted that anode 16, collar 36, trigger electrode 32, and rod 20 may be formed of stainless steel or other similar material.
  • Cavity 40 is formed by cathode 14, anode 16, and insulator bushing 34.
  • the plasma generated by unit 12 forms within cavity 40 before passing through orifice 42 of anode 16.
  • Electrical fitting 43 serves as the electrical terminal for trigger electrode 32.
  • Means 44 for applying a magnetic field to any plasma beam or stream emanating from orifice 42 is also included.
  • Means 44 is depicted as being several turns of 46 of insulative metallic wire. Turns 46 lie on the exterior of collar 36. Slot 48, FIG. 2, on anode 16 permits the magnetic field generated by means 44 to enter the plasma region within cavity 40.
  • plasma source unit 12 is mounted on a support 50.
  • Support 50 is electrically conductive and serves as a electrical conduit for the potential placed on anode 16 through conductive collar 36.
  • Support 50 is fastened to insulative base block 52 by the use of fastener 54 which also serves as a terminal for electrical conduit 56.
  • Conduit 58 feeds trigger electrode 32 while conduit 60 electrically connects to rod 20 of cathode 14.
  • a second plasma source unit 62 is also shown in FIG. 3 as being supported to base block 52 by electrically conductive support 64.
  • Plasma source unit 62 is essentially the same as plasma source unit 12, except that the cathode of plasma source unit 62 could be of different metallic material, the function of which will be described hereinafter.
  • Z-shaped electrically conductive support 70 also fixes to base block 52 by plurality of fasteners 72.
  • Electrical conduit 74 may also be connected to one of plurality of fasteners 72 to permit biasing of substrate 18.
  • a vacuum enclosure 75 envelopes plasma source units 12 and 62, as well as substrate 18 during operation of plasma generator 10.
  • Trigger pulse generator 76 feeds pulse transformer 78.
  • Trigger pulse generator 76 may include power supply 80, resistor 82, electron tube 84, capacitor 86, feeding a pulsed power supply to trigger electrode 32.
  • the metal vapor vacuum arc between cathode 14 and anode 16 is thereby caused to discharge from arc power supply 88. It should be noted that the arc current to anode 16, also flows through means 44, resulting in a pulsed magnetic field.
  • substrate 18 may also be biased by DC power supply V-2 and parallel capacitor C-2. Resistor R-2 senses the current delivered to the substrate 18.
  • plasma source unit is assembled using a particular material for cathode 14 which is determinative of the material of the thin film to be placed on substrate 18.
  • the trigger pulse line is shown in FIG. 4 is then set as to the desired number of pulses per second and the arc current on trigger electrode 32.
  • the amperage through resistor R-2 is also calculated. Comparison of the arc current through trigger electrode 32 and the plasma current to substrate 18 reveals the efficiency of the plasma generating system. For example, an efficiency of one percent would be acceptable in the embodiments show in the drawings.
  • the number of ions per shot or pulse (N) is then calculated using the following formula:
  • the thickness of one shot or pulse of plasma exiting plasma generator unit 12 may be determined. By counting the number of pulses or shots, particular thickness or number of monolayers may be predetermined With further reference to FIG. 3, plasma generator units 12 and 62 may be alternated to produce multiple layers on substrate 18. Controlling the duration of the succession of pulses from either plasma source unit 12 or 62 will also result in successive layers or films on substrate 18 of predetermined thicknesses.
  • substrate 18 is depicted as having a surface 90.
  • High energy plasma ions 92 (shaded circle) are shown as being implanted within substrate 18.
  • the ions implanted within substrate 18 are normally found in a zone 94 generally between 0.1 and 1.0 microns below surface 90 of substrate 18.
  • FIG. 6 the results obtained by the present invention is shown where the production of a film or layer 96 take place on surface 90 of substrate 18 utilizing ions 100 of plasma stream 66 ("x" within circle) .
  • the thickness of film 96 determined by regulating the number of pulses or shots of the plasma stream 6£ sent through opening or orifice 42 of anode 16. It should be mentioned that plasma stream 66 is directed onto substrate 18 by aligning axis 102 of unit i; and cathode 14 with the surface of substrate 18.
  • the transverse dimension of ion stream 66 may also be regulated by the size of orifice 42 of anode 16.
  • FIG. 6 also depicts a second layer 98 placed atop layer 96 by utilizing ions 104 (slant line within circle) originating from plasma stream 68 of unit 62 illustrated in FIG. 3.
  • layer 98 may also be produced by unit 12 after simply changing cathode 14, therewithin, to a different material.
  • the ions 100, and 104 gain electrons from substrate 18 to form the atoms of a layer atop surface 90 of substrate 18.
  • the symbols employed in FIG. 6 for such atoms are the same as the source ions shown therein.
  • Resistor 82 1 MOHM Ohmite Co. 10 Watt Skokie, IL
  • Resistor R-2 1 ohm Ohmite Co. Skokie, IL
  • the plasma source 12 of FIG. 1 was fitted with an yttrium cathode.
  • the pulse line provided an arc current of 40 amps, for a pulse duration of 250 micro seconds.
  • the silicon substrate 18 was biased to (-)25 volts D.C. , FIG. 10, using a c ne ohm resistor R *2 and a 10 microfarad capacitor C-2.
  • the vacuum on the plasma source and substrate was approximately 8xl0' 7 Torr. Ascertaining the voltage across resistor R-2, the plasma ion current measured 0.3 amps. Thus, the efficiency of the system, comparing the plasma ion current to the arc current, was about 0.75%.
  • the mean charge state of the yttrium ions was measured as 2.4.
  • the number of ions per shot or pulse was calculated as being 2.34X10 14 .
  • 1560 shots was calculated to equal a layer thickness of 1000 angstroms.
  • the plasma source was run through 1560 shots.
  • a layer of yttrium of about 980 angstroms deposited on the silicon substrate 18 (Some oxygen combined with yttrium in the deposited layer, resulting from the presence of oxygen within the vacuum chamber surrounding the plasma source and substrate) .
  • the thickness of the deposited yttrium layer was confirmed by Rutherford Backscattering Spectrometry (RBS) .
  • the film was found to be of high quality.
  • EXAMPLE II The plasma source shown in FIG. 3 was operated with an yttrium cathode in source unit 12 and a cobalt cathode in source 62. Under calculations similar to those of Example I and employing (30) amps of arc current, 1 pulse per second, and a vacuum of l. ⁇ xlO" 6 Torr, 250 shots of each source 12 and 62 were alternately applied to a silicon substrate, such as substrate 18. Thus, three layers of yttrium and four layers of cobalt, were alternately applied or interleaved. The thickness each of the cobalt layers and each of the yttrium layers were measured to be 45 angstroms and 200 angstroms, respectively.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Dispositif (10) permettant de poser une couche ou des couches minces sur un substrat (18) utilisant un générateur de faisceau de plasma métallique (10) qui comprend une unité (12) dotée d'une anode (16), d'une cathode (14) en la même matière que la couche, et d'un igniteur (32). Un contrôle sert à déterminer de manière exacte, le taux de plasma métallique provenant dudit générateur de faisceau de plasma (10). On utilise un support (70) pour retenir le substrat (8) dans un emplacement prédéterminé espacé dudit générateur (10). La chambre à vide (75) enveloppe le générateur de plasma (10) ainsi que le substrat (18).
PCT/US1990/005431 1989-10-02 1990-09-28 Procede et dispositif de fabrication de couches minces WO1991005073A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41561689A 1989-10-02 1989-10-02
US415,616 1989-10-02

Publications (1)

Publication Number Publication Date
WO1991005073A1 true WO1991005073A1 (fr) 1991-04-18

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Application Number Title Priority Date Filing Date
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WO (1) WO1991005073A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
US4673477A (en) * 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
US4785220A (en) * 1985-01-30 1988-11-15 Brown Ian G Multi-cathode metal vapor arc ion source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4673477A (en) * 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
US4673477B1 (fr) * 1984-03-02 1993-01-12 Univ Minnesota
US4785220A (en) * 1985-01-30 1988-11-15 Brown Ian G Multi-cathode metal vapor arc ion source
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus

Also Published As

Publication number Publication date
AU6716390A (en) 1991-04-28

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