Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
  • H10H20/822—Materials of the light-emitting regions
  • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
  • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
  • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
  • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
  • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
  • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/81—Bodies
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/01—Manufacture or treatment
  • H10H20/034—Manufacture or treatment of coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/83—Electrodes
  • H10H20/831—Electrodes characterised by their shape
  • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

Definitions

• the resulting invention is in danger of being in danger of being compromised, and there is a risk of personal injury in the event of a hazard.
• P ⁇ i e ⁇ m me ⁇ alliches ⁇ y Electricity at the same time it is possible to reduce the incidence of obstructive pain, with van on sl ⁇ e audio ⁇ ida gallium legi ⁇ vann ⁇ m a ⁇ tse ⁇ nymi ⁇ imesyami and me ⁇ alliches ⁇ y ele ⁇ d, ⁇ ⁇ u l ⁇ il ⁇ zhen ⁇ na ⁇ yazhe of ⁇ l ⁇ zhi ⁇ eln ⁇ y ⁇ lya ⁇ n ⁇ s ⁇ i, s ⁇ mi ⁇ van on sl ⁇ e ni ⁇ ida gallium ⁇ - ⁇ i ⁇ a ⁇ v ⁇ dim ⁇ s ⁇ i ( ⁇ ⁇ tsev ⁇ y chas ⁇ i sl ⁇ ya).
• the final impurities are accumulated at the top and bottom of the layer between the grain.
• the LIQUID nitride gallium ⁇ -type is applied.
• the indicated slurry is coated with a gallium nitride, doped with excisable solutions and consisting of two substrates. For this reason, only a weak
• 35 gzgr ⁇ an was the last month and was applied directly to the layer of nitride gallium ⁇ . -type of availability, and
• the metallic elec- trode which is designed to be user-friendly, is disconnected from the gallium nitride layer is ⁇ -type impulse.
• 10 S ⁇ s ⁇ b izg ⁇ vleniya u ⁇ azann ⁇ g ⁇ ⁇ ib ⁇ a v ⁇ lyuchae ⁇ e ⁇ i ⁇ a ⁇ sialn ⁇ e vy ⁇ aschivanie on ⁇ dl ⁇ zh ⁇ e of m ⁇ n ⁇ is ⁇ al- liches ⁇ g ⁇ ma ⁇ e ⁇ iala, ⁇ z ⁇ achn ⁇ g ⁇ in vidim ⁇ y chas ⁇ i s ⁇ e ⁇ a, sl ⁇ ya ni ⁇ ida gallium g ⁇ - ⁇ i ⁇ a ⁇ v ⁇ dim ⁇ s ⁇ i, e ⁇ i ⁇ a ⁇ sialn ⁇ e vy ⁇ aschivanie on u ⁇ azann ⁇ m sl ⁇ e sl ⁇ ya '15 ni ⁇ ida gallium, legi ⁇ vann ⁇ g ⁇
• Non-metallic elec- trode which is designed for direct voltage reduction, is active in the treatment of 30 gallium-nitride-sulfate.
• Non-metallic elec- tric discharge in order to use a positive voltage, they are protected by a low voltage of rhodium gallium I. -tovsha.
• the metal is electrically fused either at the end of the layer 35 and gallium is inactive, or they create a state of ignition (t.
• P ⁇ s ⁇ avlennaya task ⁇ eshae ⁇ sya ⁇ em, ch ⁇ in ⁇ lu ⁇ - B ⁇ dni ⁇ B ⁇ m sve ⁇ izluchayutsem ⁇ ib ⁇ e on ⁇ sn ⁇ ve ni ⁇ ida gallium s ⁇ de ⁇ zhaschem ⁇ dl ⁇ zh ⁇ u of m ⁇ n ⁇ is ⁇ alliches ⁇ g ⁇ ma ⁇ e ⁇ iala, ⁇ z ⁇ achn ⁇ g ⁇ in vidim ⁇ y ⁇ blas ⁇ i s ⁇ e ⁇ a on ⁇ uyu applied sl ⁇ y ni ⁇ ida gallium ⁇ - ⁇ i ⁇ a ⁇ v ⁇ - dim ⁇ s ⁇ i and ⁇ ve ⁇ neg ⁇ sl ⁇ y gallium ni ⁇ ida, legi ⁇ van- ny a ⁇ tse ⁇ nymi ⁇ imesyami and ⁇ a ⁇ zhe two me ⁇ all ⁇ ches ⁇ i ⁇ ele ⁇ da
• the commercially available material makes it easy to handle large quantities of gallium oxide, which is lightly burnt. This eliminates the possibility of leakage of current and recognition of industrial effects in the process of processing of the device.
• the use of the device which has a doped layer of gallium nitride, is sharply inhibited by a strong, non-uniform nature, and it is not inconsequential that - 6 -
• the use of the device which has a light doped layer of gallium nitrate, is well-maintained, is healthy, and is healthy and healthy.
• the light emitting area is limited to only
• the metal is electrified, the voltage is on and the voltage is on, and there is an external voltage on the unit gallium nitride, lightened by excipients.
• a device When a device is prepared that has a doped gallium nitride, it is characterized by a strong non-uniformity, which is beneficial, so long as it is safe
• the erosive material was fouled by electrochemical precipitation of Altain in the elec- troite, which contains aluminum salt, and the subsequent anodic oxidation of diluted aluminum.
• the device which has a doped 25th gallium nitride alloyed with a cleaned base, it is highly stable . It is advisable that the light emitting material was fouled by the anodic oxidation of the nitride layer of gallium, which is lightened by impurities. 30 Turning on -
• ⁇ - 8 - ⁇ ig. 2 Discovers the modi fi cation of the claimed device with elec- trodes, which are supplied as a result of a separate material, as agreed on by the invention; ⁇ ig. 3 iz ⁇ b ⁇ azhae ⁇ m ⁇ di ⁇ i ⁇ atsiyu zayazzlyaem ⁇ g ⁇ ⁇ ib ⁇ - 5 ⁇ a, ⁇ din ele ⁇ d ⁇ g ⁇ s ⁇ mi ⁇ van on sl ⁇ e iz ⁇ li- ⁇ uyuscheg ⁇ ma ⁇ e ⁇ iala and d ⁇ u ⁇ y - on sl ⁇ e gallium ni ⁇ ida, legi ⁇ vann ⁇ m a ⁇ tse ⁇ nysh ⁇ imesyami, ⁇ d ⁇ lny ⁇ az- ⁇ ez, s ⁇ glasn ⁇ iz ⁇ b ⁇ eniyu.
• the best vaantant of the present invention is 10 of the Own light of the incident on the main-
• not nitride gallium is contained in the case for I (see Fig. ⁇ drawing) from a multi-component material, in the case of a sys- tem, On stage I, a layer 2 of gallium nitride ⁇ -type type 15 was applied. In turn, the indicated layer 2 is marked with a layer 3 of nitride of gallium, alloyed with excludable impurities. Further, in the light of lightweight, more practical impurities, elements of the main operating system may be used: ⁇ g, ⁇ , - C ⁇ _. According to the complaint of the Layer 3 nitride, gallium, lightweight, impurity impurities, is covered by a layer of 4 live materials.
• a more effective value for the operating voltage is the modification of the claimed device, which is shown in FIG. 3 ⁇ -embedded drawings.
• the effective implementation of this modification of the device in the main such, as it was described above.
• the electric power supply is 5, which is in direct pressure.
• the manufacturing method of the claimed radiating light emitters on the main nitride of gallium includes the following operations.
• ⁇ a ⁇ dl ⁇ ya ⁇ e I (sm. ⁇ ig. ⁇ -3 ⁇ ilagaemy ⁇ che ⁇ ezhey) of m ⁇ n ⁇ is ⁇ allzhches ⁇ g ⁇ -ma ⁇ e ⁇ iala, ⁇ z ⁇ achn ⁇ g ⁇ in vi- 25 di ⁇ l ⁇ y ⁇ blas ⁇ i s ⁇ e ⁇ a (na ⁇ ime ⁇ from sa ⁇ i ⁇ a) ⁇ l ⁇ id- n ⁇ -gid ⁇ zhdnym me ⁇ d ⁇ m esh ⁇ a ⁇ sialn ⁇ vy ⁇ aschivayu ⁇ sl ⁇ y 2 ni ⁇ ida gallium ⁇ - ⁇ i ⁇ a ⁇ v ⁇ dim ⁇ s ⁇ i .
• the major material is located in the main part of the low-frequency sectors of light gallium nitride 3.
• the epithetically grown layer of gallium niobium, doped with zinc was grown.
• the purification was carried out at a temperature of 900 + 2 ° C for 120 seconds.
• the temperature of the solid-state alloying mixture was 580 + 3 ° ⁇ .
• the thickness of the layer was 8- ⁇ 0 ⁇ 7 m.
• the ingesting material is fo rmzhr ⁇ ali electric
• the resultant layer of the emitting material was applied by spraying a layer of aluminum with a thickness of 6. 10 m and the method of sharing the business electricity.

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• Led Devices (AREA)
• Luminescent Compositions (AREA)
• Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

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• 1981
  • 1981-10-12 FR FR8119170A patent/FR2514566A1/fr active Granted
• 1982
  • 1982-02-02 GB GB08322975A patent/GB2123607B/en not_active Expired
  • 1982-02-02 DE DE823249344T patent/DE3249344T1/de not_active Withdrawn
  • 1982-02-02 JP JP82501062A patent/JPS59500120A/ja active Pending
  • 1982-02-02 WO PCT/SU1982/000002 patent/WO1983002685A1/ru not_active Ceased
  • 1982-02-02 CH CH5485/83A patent/CH661153A5/de not_active IP Right Cessation
• 1983
  • 1983-09-01 US US06/537,399 patent/US4608581A/en not_active Expired - Fee Related

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