WO1982002986A1 - Amplificateur de puissance - Google Patents

Amplificateur de puissance Download PDF

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Publication number
WO1982002986A1
WO1982002986A1 PCT/GB1982/000061 GB8200061W WO8202986A1 WO 1982002986 A1 WO1982002986 A1 WO 1982002986A1 GB 8200061 W GB8200061 W GB 8200061W WO 8202986 A1 WO8202986 A1 WO 8202986A1
Authority
WO
WIPO (PCT)
Prior art keywords
amplifier
low voltage
driver
transistors
power
Prior art date
Application number
PCT/GB1982/000061
Other languages
English (en)
Inventor
Electronics Ltd Derritron
Original Assignee
Purves Colin George
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Purves Colin George filed Critical Purves Colin George
Publication of WO1982002986A1 publication Critical patent/WO1982002986A1/fr

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0244Stepped control
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3081Duplicated single-ended push-pull arrangements, i.e. bridge circuits

Definitions

  • This invention relates to power amplifiers and one object is to provide a power amplifier which is capable of driving loads such as electromagnetic loads as vibrators, which may require to be driven by high peak voltages, of short duration.
  • a power amplifier comprises at least one low voltage amplifier unit and a driver for it, and a high voltage amplifier unit in series with each low voltage amplifier unit and a second driver for it, which second driver is sensitive to driver input voltages of greater than a predetermined amplitude and/or greater than a predetermined rate of rise, and a common output from both amplifier units.
  • the low voltage amplifier unit or units can be used in a conventional way, but if a peak drive signal is received perhaps with an amplitude three times that of the sinusoidal voltage, it is very desirable that a corresponding current could be applied to the load without very much distortion, and in accordance with the invention that can be provided by the higher voltage amplifier unit which can use a low power source which will be quite adequate provided the high peak voltage last only momentarily. It would of course be inefficient to maintain a high power high voltage supply always available just for such a peak.
  • the invention contemplates the idea of recognising that such a high peak voltage is a short term voltage by making the amplifier driver sensitive to the rate of rise of "the peak voltage. Then the two amplifier units can be used together to supply power to the load for the duration of the momentary peak.
  • the first and second drivers are conveniently responsive to the same driver input signals.
  • low voltage amplifier units in the form of transistors connected in a bridge arrangement with output terminals connected across two corners of the bridge, and with the low voltage supply connected across the opposite corners. Diagonally opposite transistors are then controlled by respective drivers in dependence on the polarity of a driver input signal.
  • the high voltage amplifier units are also a transistor bridge like arrangement with one of each transistors connected in series with one of the low voltage transistors, and with a higher voltage supply connected across the corners of the outer bridge.
  • the inner bridge operates conventionally, but if a sufficiently fast rising high peak input signal arrives, and is recognised as such by the second driver unit, then opposite ones of the high voltage switch units will be connected in circuit so that the higher voltage is momentarily available for producing a corresponding current in the load, such current being driven through the low voltage transistors to the load with similar phasing.
  • This power amplifier is for supplying current through a large electro-magnetic vibrator 11 connected across amplifier output terminals 12 in response to an alternating input signal at 13 and amplified in a preamplifier 14.
  • a low voltage source 15 consisting of terminals respectively at +75 and -75 volts. That supply is connected across opposite terminals 16 of a transistor bridge consisting of four transistors 17, 18, 19 and 20.
  • the output terminals 12 are connected between the junctions respectively of the transistors
  • driver unit 21 biases the transistors 17 and 18 on, so that current flows through the load from the positive terminal to the negative terminal of the low voltage supply 15. If current is required in the other sense, then the driver 22 turns on the transistors 19 and 20, so that current flows to terminals 12 through the load from the same source 15 but with a polarity reverse! as experienced by the load.
  • a basic sinusoidal signal or a signal which has random noise superimposed upon it, or a random noise test signal to a predetermined spectrum and that may include a momentary high peak voltage of perhaps three times the RMS voltage of the particular signal.
  • a high input signal could not produce a corresponding output in the load 11 from the low voltage supply 15 with the amplifier supplying full power, so that the effect of the random noise would not be correctly reproduced, and in any case reflections and distortions would be introduced into the system.
  • That high voltage supply is connected across opposite corners of an "outer" transistor bridge consisting of transistors 31, 32, 33 and 34 each of which is connected in series between one side of the high voltage supply, and one of the transistors 17, 18, 19 and 20.
  • the transistors 31 and 32 are driven by a driver circuit 35 from one side of the phase splitter 23, and the transistors 33 and 34 are driven by a corresponding driver 36 from the other side of the phase splitter.
  • the drivers 35 and 36 are sensitive only to signals with a rate of rise above a rate fixed by experience to indicate that the following peak is going to be of very short duration, compared with the average of the noise signal voltage at 13. On recognising such a peak voltage, the driver
  • a diode 41 or 42 is connected between the +75 volts terminal of the source 15, and each of the junctions of the transistors 31 and 17, and 33, and 19, so that current is blocked from the high voltage terminal to the low voltage terminal which would attempt to pull up the low voltage of the supply 15 when the high voltage circuit is operating.
  • diodes 43 and 44 are similar diodes 43 and 44 on the negative side.
  • the invention has been described as if each of the eight transistors was a single transistor, whereas in many applications where a high current is required, each would be replaced by a number of transistors in parallel.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

Amplificateur de puissance capable d'attaquer un vibrateur electromagnetique (11) raccorde aux bornes de sortie (12). L'attaque est realisee normalement a partir d'une alimentation basse tension (15) au travers d'un pontage d'amplificateurs a transistor (17, 18, 19 et 20) attaques par des circuits d'attaque respectifs (21, 22) en fonction de la phase de la tension d'attaque. Lorsqu'une crete momentanee dans la tension d'attaque est detectee, les transistors de l'amplificateur haute tension (31, 32, 33 et 34) sont attaques en serie avec les transistors de faible tension par les circuits d'attaque (35, 36) et une alimentation de faible puissance et a tension elevee (25) est disponible pour les cretes de puissance de courte duree.
PCT/GB1982/000061 1981-02-24 1982-02-24 Amplificateur de puissance WO1982002986A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8105764810224 1981-02-24
GB8105764A GB2093653A (en) 1981-02-24 1981-02-24 Power amplifier

Publications (1)

Publication Number Publication Date
WO1982002986A1 true WO1982002986A1 (fr) 1982-09-02

Family

ID=10519913

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1982/000061 WO1982002986A1 (fr) 1981-02-24 1982-02-24 Amplificateur de puissance

Country Status (3)

Country Link
EP (1) EP0072828A1 (fr)
GB (1) GB2093653A (fr)
WO (1) WO1982002986A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008034456B4 (de) * 2008-07-24 2011-07-28 Linck, Fritz, 86391 Gleichstromgekoppelter kaskadierter Transistorverstärker für hohe Ausgangsspannungen

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3488551A (en) * 1966-09-23 1970-01-06 Raytheon Co Magnetic deflection amplifier with circuit accommodating for the back emf
US3808545A (en) * 1972-10-04 1974-04-30 Int Radio & Electronics Corp High power bridge audio amplifier

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3488551A (en) * 1966-09-23 1970-01-06 Raytheon Co Magnetic deflection amplifier with circuit accommodating for the back emf
US3808545A (en) * 1972-10-04 1974-04-30 Int Radio & Electronics Corp High power bridge audio amplifier

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM Tecnical Disclosure Bulletin, Vol. 20, No. 12, published in May 1978 (Armonk, New York, US) P.A.E. GARDNER: "Phase Splitter with Controlled Common-Mode Level", see pages 5372-5373 *
PATENT ABSTRACTS OF JAPAN, Vol. 5, No. 117, published on July 28, 1981, see page E67-789, JP, A, 54 133387, 19 May 1981, Nippon Gakki Seizo K.K. *

Also Published As

Publication number Publication date
GB2093653A (en) 1982-09-02
EP0072828A1 (fr) 1983-03-02

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