WO1980002899A1 - Charge coupled digital-to-analog converter - Google Patents

Charge coupled digital-to-analog converter Download PDF

Info

Publication number
WO1980002899A1
WO1980002899A1 PCT/US1980/000400 US8000400W WO8002899A1 WO 1980002899 A1 WO1980002899 A1 WO 1980002899A1 US 8000400 W US8000400 W US 8000400W WO 8002899 A1 WO8002899 A1 WO 8002899A1
Authority
WO
WIPO (PCT)
Prior art keywords
charge
gate
digital
semiconductor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1980/000400
Other languages
English (en)
French (fr)
Inventor
M Mcnutt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of WO1980002899A1 publication Critical patent/WO1980002899A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion

Definitions

  • a p+ channel stop or boundary region is defined by the elongated p+ regions 22, 23, 24, 25, and 26; p+ regions 28, 29, 30, 31, and 32 connected respectively thereto, and another elongated p+ region 27 extending normal to the regions 22-26, surround at least in part the n+ regions 18, 19, 20 and 21.
  • the elongated regions 28 and 32 join another p+ channel stop region 38 and 39 respectively which define at least a portion of the charge storage well according to the present invention.

Landscapes

  • Analogue/Digital Conversion (AREA)
PCT/US1980/000400 1979-06-15 1980-04-09 Charge coupled digital-to-analog converter Ceased WO1980002899A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48960 1979-06-15
US06/048,960 US4321584A (en) 1979-06-15 1979-06-15 Charge coupled digital-to-analog converter

Publications (1)

Publication Number Publication Date
WO1980002899A1 true WO1980002899A1 (en) 1980-12-24

Family

ID=21957358

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1980/000400 Ceased WO1980002899A1 (en) 1979-06-15 1980-04-09 Charge coupled digital-to-analog converter

Country Status (4)

Country Link
US (1) US4321584A (enExample)
EP (1) EP0029850A4 (enExample)
JP (1) JPS56500832A (enExample)
WO (1) WO1980002899A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198676A (ja) * 1985-02-27 1986-09-03 Nec Corp 半導体集積回路装置
US4803531A (en) * 1987-09-18 1989-02-07 Tektronix, Inc. Imaging charge-coupled device having an all parallel output
DE19518966C1 (de) * 1995-05-23 1996-09-19 Lg Semicon Co Ltd Digital/Analog-Umsetzer
KR0142942B1 (ko) * 1995-07-24 1998-08-01 김광호 디지탈 무선전화기의 권외지역 경보방법
US6812878B1 (en) * 2003-04-30 2004-11-02 Agilent Technologies, Inc. Per-element resampling for a digital-to-analog converter
US20240313796A1 (en) * 2023-03-15 2024-09-19 David Schie Charge domain approach to oversampling converters

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836906A (en) * 1972-03-02 1974-09-17 Sony Corp Digital-to-analog converter circuit
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US4126852A (en) * 1977-04-15 1978-11-21 General Electric Company Multiplying digital to analog converter
US4161783A (en) * 1978-04-03 1979-07-17 The United States Of America As Represented By The Secretary Of The Navy Charge-coupled multiplying digital-to-analog converter
US4171521A (en) * 1977-06-02 1979-10-16 Hughes Aircraft Company Charge-coupled analog-to-digital converter
US4213120A (en) * 1978-03-06 1980-07-15 Westinghouse Electric Corp. CCD Digital-to-analog converter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383555A1 (fr) * 1977-03-08 1978-10-06 Thomson Csf Convertisseur numerique-analogique utilisant un dispositif a transfert de charges

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836906A (en) * 1972-03-02 1974-09-17 Sony Corp Digital-to-analog converter circuit
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US4126852A (en) * 1977-04-15 1978-11-21 General Electric Company Multiplying digital to analog converter
US4171521A (en) * 1977-06-02 1979-10-16 Hughes Aircraft Company Charge-coupled analog-to-digital converter
US4213120A (en) * 1978-03-06 1980-07-15 Westinghouse Electric Corp. CCD Digital-to-analog converter
US4161783A (en) * 1978-04-03 1979-07-17 The United States Of America As Represented By The Secretary Of The Navy Charge-coupled multiplying digital-to-analog converter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Solid-State Electronics" published 1974 Vol. 17 page 1147-1154 MOK et al. (see fig. 7). *

Also Published As

Publication number Publication date
EP0029850A4 (en) 1981-10-13
JPS56500832A (enExample) 1981-06-18
US4321584A (en) 1982-03-23
EP0029850A1 (en) 1981-06-10

Similar Documents

Publication Publication Date Title
US3789267A (en) Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US4112456A (en) Stabilized charge injector for charge coupled devices with means for increasing the speed of propagation of charge carriers
US3858232A (en) Information storage devices
US4047215A (en) Uniphase charge coupled devices
US3913077A (en) Serial-parallel-serial ccd memory with interlaced storage
CA1089986A (en) Operating circuitry for semiconductor charge coupled devices
US3893152A (en) Metal nitride oxide semiconductor integrated circuit structure
GB1457253A (en) Semiconductor charge transfer devices
US4807005A (en) Semiconductor device
US3735156A (en) Reversible two-phase charge coupled devices
EP0205203B1 (en) Charge-coupled device
US4321584A (en) Charge coupled digital-to-analog converter
US4099175A (en) Charge-coupled device digital-to-analog converter
GB1594562A (en) Semiconductor devices
EP0059547A1 (en) Clock controlled anti-blooming for virtual phase CCD's
US3790825A (en) Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
Engeler et al. A memory system based on surface-charge transport
US5146480A (en) Sampling an analog signal voltage using fill and spill input in charge transfer device
US3918081A (en) Integrated semiconductor device employing charge storage and charge transport for memory or delay line
EP0078890A2 (en) Method of fabrication of dielectrically isolated CMOS device with an isolated slot
US4706107A (en) IC memory cells with reduced alpha particle influence
US4449224A (en) Dynamic merged load logic (MLL) and merged load memory (MLM)
US3825996A (en) Gate-diffusion isolation for jfet depletion-mode bucket brigade circuit
US4592130A (en) Method of fabricating a CCD read only memory utilizing dual-level junction formation
US4903097A (en) CCD read only memory

Legal Events

Date Code Title Description
AK Designated states

Designated state(s): JP

AL Designated countries for regional patents

Designated state(s): DE GB

WWE Wipo information: entry into national phase

Ref document number: 1980901283

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1980901283

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1980901283

Country of ref document: EP