USRE46191E1 - Imprint pattern forming method - Google Patents
Imprint pattern forming method Download PDFInfo
- Publication number
- USRE46191E1 USRE46191E1 US14/717,980 US201514717980A USRE46191E US RE46191 E1 USRE46191 E1 US RE46191E1 US 201514717980 A US201514717980 A US 201514717980A US RE46191 E USRE46191 E US RE46191E
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- US
- United States
- Prior art keywords
- template
- pattern
- back surface
- pressure
- imprint material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
- B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
- B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C2043/3205—Particular pressure exerting means for making definite articles
- B29C2043/3222—Particular pressure exerting means for making definite articles pressurized gas, e.g. air
- B29C2043/3233—Particular pressure exerting means for making definite articles pressurized gas, e.g. air exerting pressure on mould parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/34—Feeding the material to the mould or the compression means
- B29C2043/3488—Feeding the material to the mould or the compression means uniformly distributed into the mould
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/58—Measuring, controlling or regulating
- B29C2043/5808—Measuring, controlling or regulating pressure or compressing force
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
Definitions
- the present invention relates to an imprint pattern forming method.
- nano imprinting In recent years, much effort has been made to develop a micromachining technique called nano imprinting.
- a template in which a pattern to be transferred is formed is contacted with a photocurable organic material (resist) coated on a substrate. Then, the resist is irradiated with light and thus cured. The template is then separated from the resist to form a resist pattern (see, for example, Jpn. Pat. Appln. KOKAI Publication Nos. 2001-68411 and 2000-194142).
- the pattern forming method does not always allow patterns to be properly formed.
- an imprint pattern forming method comprising: contacting a template with a pattern in a front surface with an imprint material formed in a substrate to fill the imprint material into the pattern; curing the imprint material filled in the pattern to form an imprint material pattern; and after forming the imprint material pattern, separating the template from the imprint material pattern while applying pressure to the back surface of the template.
- FIG. 1 is a sectional view schematically showing a part of an imprint method according to an embodiment of the present invention
- FIG. 2 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention
- FIG. 3 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 4 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 5 is a sectional view schematically showing a part of an imprint method according to a comparative example of the embodiment of the present invention.
- FIG. 6 is a sectional view schematically showing a part of the imprint method according to the comparative example of the embodiment of the present invention.
- FIG. 7 is a sectional view schematically showing a part of the imprint method according to the comparative example of the embodiment of the present invention.
- FIG. 8 is a sectional view schematically showing a part of the imprint method according to the comparative example of the embodiment of the present invention.
- FIG. 9 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 10 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 11 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 12 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 13 is a sectional view schematically showing a part of the imprint method according to the embodiment of the present invention.
- FIG. 14A is a diagram showing the relationship between a load and time in the steps shown in FIGS. 5 to 8
- FIG. 14B is a diagram showing the relationship between a load and time in the steps shown in FIGS. 9 to 13 ;
- FIG. 15 is a sectional view schematically showing a part of an imprint method according to a modification 1 of the embodiment of the present invention.
- FIG. 16 is a sectional view schematically showing a part of the imprint method according to the modification 1 of the embodiment of the present invention.
- FIG. 17 is a sectional view schematically showing a part of the imprint method according to the modification 1 of the embodiment of the present invention.
- FIG. 18 is a sectional view schematically showing a part of the imprint method according to the modification 1 of the embodiment of the present invention.
- FIG. 19 is a sectional view schematically showing a part of the imprint method according to the modification 1 of the embodiment of the present invention.
- FIG. 20A is a diagram showing the relationship between a separation speed and time in the steps shown in FIGS. 5 to 8
- FIG. 20B is a diagram showing the relationship between a separation speed and time in the steps shown in FIGS. 15 to 19 .
- FIGS. 1, 2, 3 and 4 are sectional views schematically showing a basic imprint method according to the present invention.
- an appropriate amount of photocurable organic material (resist) 101 as a pattern forming material (imprint material) is dropped onto a processing target surface of a substrate 100 according to an inkjet scheme.
- the resist 101 is scattered on the processing target surface of the substrate 100 at a plurality of points.
- the resist 101 may be formed into a pattern forming material layer in a given area.
- a template 102 includes a pattern formed in a front surface and is held on the front surface of a template holding section 103 . Furthermore, the back surface of the template 102 and the front surface of the template holding section 103 form a space 104 .
- the back surface side of the template holding section 103 connects to a moving mechanism (not shown in the drawings) configured to move the template 102 and the template holding section 103 via a load measuring section (not shown in the drawings).
- the load measuring section is, for example, a spring balance including a pressure sensor.
- the load measuring section is used to measure a load imposed on the template 102 .
- the template holding section 103 comprises an inlet 105 through which for example, gas is introduced into or discharged from the space 104 .
- the template 102 is made of, for example, glass.
- the area in which the pattern is formed is substantially flat.
- gas is introduced into the space 104 .
- pressure is applied to the back surface of the template 102 to bend the template 102 such that the template 102 protrudes toward the front surface.
- the template 102 and the substrate 100 are assigned with each other.
- the plate 102 With the gas held in the space 104 , the plate 102 is lowered vertically to bring the template 102 into contact with the resist 101 .
- the resist 101 is then filled into the pattern (recess pattern) in the template 102 .
- the gas in the space 104 is discharged to reduce the pressure in the space 104 .
- the resist 101 is irradiated with ultraviolet rays from above the template holding section 103 in order to be sufficiently cured.
- a resist pattern (imprint material pattern) is formed on the photocurable organic material 101 .
- gas is introduced into the space 104 .
- the template 102 is lifted vertically and separated from the resist 101 .
- the pattern shape formed in the template 102 is transferred to the resist 101 .
- FIG. 4 A separation method shown in FIG. 4 will be described in detail with reference to FIGS. 5, 6, 7, 8, 9, 10, 11, 12, 13, 14A and 14B .
- FIGS. 5, 6, 7 and 8 are sectional views showing a part of the separation method according to a comparative example of the present embodiment.
- FIGS. 9, 10, 11, 12 and 13 are sectional views showing a part of the separation method according to the present embodiment.
- FIG. 14A is a graph showing the relationship between a load and time in steps shown in FIGS. 5, 6, 7 and 8 .
- FIG. 14B is a graph showing the relationship between a load and time in steps shown in FIGS. 9, 10, 11, 12 and 13 .
- the template 102 comprises an area A in which a dense pattern is formed, an area C in which a coarse pattern is formed, an area E in which a dense pattern is formed, an area B corresponding to the boundary between areas A and C, and an area D corresponding to the boundary between areas C and E. Furthermore, the template 102 and the resist 101 are in close contact with each other. The adhesion increases consistently with the size of the area in which the template 102 and the resist 101 are in contact with each other. That is, the adhesion increases consistently with the density of the pattern.
- the lifting generally starts from the periphery (end) of the template.
- the separation starts from the end and progresses from the end toward a central portion.
- the separation speed the speed at which the template 102 is separated from the resist 101 is low.
- the load imposed on the template 102 corresponds to the force with which the template is pulled by the resist. In other words, the load corresponds to the force required to separate the template from the resist.
- the adhesion decreases as the separating of template 102 from the resist 101 progresses to area A and area B, located near area C.
- the separation speed refers to the speed at which the template is separated from the resist.
- the separation speed is high.
- area D is separated at the high separation speed. Consequently, a part of the resist 101 formed near area D is stripped by the template 102 , resulting in a defect in the pattern.
- area E the dense pattern with the strong adhesion is formed. This serves to increase the load imposed on the template 102 , while reducing the separation speed. Hence, a normal pattern is formed on a part of the resist 101 formed near area E.
- a rapid change in the load imposed on the template 102 may result in a defect in the pattern.
- a rapid change in the adhesion between the template 102 and the resist 101 may result in a defect in the pattern.
- the template 102 ad the resist 101 are in close contact with each other.
- the template 102 when lifted vertically by the given force, the template 102 is separated from the resist 101 starting from area A, located at the end. In area A, the dense pattern is formed. Thus, a heavy load is imposed on the template 102 , and the separation speed is low. As a result, area A is separated normally.
- the adhesion decreases as the separating of the template 102 progresses to area A and area B, located near area C.
- the load imposed on the template 102 is rapidly reduced to rapidly increase the separation speed near area B.
- a lower load threshold and a higher load threshold are set in, for example, a control section (not shown in the drawings) connected to the load measuring section configured to measure the load imposed on the template 102 .
- gas is introduced into the space 104 , that is, the back surface side of the template 102 , to apply pressure to the back surface of the template 102 .
- This increases the load imposed on the template 102 , while reducing the separation speed.
- FIG. 14B a rapid decrease in load during the separation of area B can be suppressed.
- a possible defect in the pattern can be inhibited by performing control such that the load imposed on the template 102 or the change rate of the load is constant as shown in FIG. 14B .
- gas is introduced into the space 104 in order to keep the load imposed on the template 102 or the change rate of the load constant.
- the template holding section 103 comprises the load measuring section configured to measure the load imposed on the template 102 and the inlet 105 configured to introduce or discharge the gas into or from the space 104 .
- the load imposed on the template 102 is measured using the load measuring section so that the gas can be introduced into or discharged from the back surface side of the template 102 through the inlet 105 depending on a change in load.
- Application of pressure to the back surface of the template allows the load imposed on the template 102 or the change rate of the load to be kept constant. This enables inhibition of a possible defect in the resist 101 caused by a rapid change in load.
- the template holding section 103 comprises the load measuring section configured to measure the load imposed on the template 102 .
- the load measuring section is used to measure the load imposed on the template 102 in order to allow determination of whether to introduce or discharge the gas into or from the space 104 .
- Modification 1 a method will be described which allows determination of whether to introduce or discharge the gas into or from the space 104 based on the separation speed of the template 102 .
- the process through the step of filling the resist 101 into the pattern in the template 102 is similar to that in the above-described embodiment and thus will not be described.
- FIG. 4 The separation method shown in FIG. 4 will be described in detail with reference to FIGS. 15, 16, 17, 18, 19, 20A and 20B .
- FIGS. 15, 16, 17, 18 and 19 are sectional views showing a part of the separation methods according to the present modification. Furthermore, FIG. 20A is a graph showing the relationship between the separation speed and time in the steps shown in FIGS. 5, 6, 7 and 8 . FIG. 20B is a graph showing the relationship between the separation speed and time in the steps shown in FIGS. 15, 16, 17, 18 and 19 .
- the load imposed on the template 102 decreases rapidly as the separation shifts from the dense pattern to the coarse pattern.
- the separation speed of the template 102 increases rapidly when the separation shifts from the dense pattern to the coarse pattern.
- the separation speed of the template 102 is controlled as described below.
- the template 102 and the resist 101 are in close contact with each other.
- the ends of the template 102 and the substrate 100 are irradiated with laser beams to measure the speed at which the template 102 is separated from the substrate.
- the template 102 when lifted by the given force, the template 102 is separated from the resist 101 starting from area A, which corresponds to the end. In area A, the dense pattern is formed. Thus, a heavy load is imposed on the template 102 , and the separation speed of the template 102 is low. As a result, area A is separated normally.
- the adhesion decreases as the separating of the template 102 progresses to area A and area B, located near area C.
- the load imposed on the template 102 is rapidly reduced to rapidly increase the separation speed near area B.
- a lower speed threshold and a higher speed threshold are set in, for example, a measuring section (not shown in the drawings) configured to measure the speed of the template 102 .
- gas is introduced into the space 104 , that is, the back surface side of the template 102 , to apply pressure to the back surface of the template 102 .
- This increases the separation speed of the template 102 .
- a rapid increase in the separation speed of the template 102 during the separation of area B can be suppressed.
- a possible defect in the pattern can be inhibited by controllably keeping the speed of the template 102 or the change rate of the speed constant.
- gas is introduced into the space 104 to keep the speed of the template 102 or the change rate of the speed constant.
- the separation speed of the template 102 is measured.
- the separation speed of the template 102 is measured so that the gas is introduced into or discharged from the back surface side of the template 102 through the inlet 105 depending on a change in speed.
- Application of pressure to the back surface side of the template 102 allows the speed of the template 102 or the change rate of the change to be kept constant. This enables inhibition of a possible defect in the resist 101 caused by a rapid change in load.
- the separation speed of the template 102 is measured using laser beams.
- the separation speed of the template 102 is measured to allow determination of whether to introduce or discharge the gas into or from the space 104 .
- a method of measuring the separation speed by observing the separation state of the template 102 with a CCD or the like will be described.
- the process through the step of filling the resist 101 into the pattern in the template 102 is similar to that in the above-described embodiment and thus will not be described.
- the resist 101 is assimilated with the template 102 .
- the observed state of the area from which the resist 101 has been separated is different from that of the area from which the resist 101 has not been separated.
- the separation of the template generally progresses from the end to the central portion.
- the observed separation slate of the template 102 appears like a ring-like pattern (annular pattern).
- the separation speed of the template 102 can be measured by, for example, observing this pattern with a CCD (not shown in the drawings) installed above the template holding section 103 to measure the speed at which the size of the annular pattern decreases.
- the separation speed of the template 102 is measured by observing the released resist 101 from above the template 102 with a CCD or the like. That is, when the template 102 is separated from the resist 101 , the separation speed of the template 102 is measured so that the gas is introduced into or discharged from the back surface side of the template 102 through the inlet 105 depending on a change in speed. Application of pressure to the back surface side of the template 102 allows the speed of the template 102 or the change rate of the change to be kept constant. This enables inhibition of a possible defect in the resist 101 caused by a rapid change in load.
- the load imposed on the template 102 or the separation speed of the template 102 is measured. Then, when the template 102 is separated, the load imposed on the template 102 or the separation speed of the template 102 is measured to allow determination of whether to introduce or discharge the gas into or from the space 104 .
- Modification 3 a method will be described which allows determination of whether to introduce or discharge the gas into or from the space 104 based on design data on the template 102 including CAD design pattern information on the pattern formed in the template 102 .
- the process through the step of filling the resist 101 into the pattern in the template 102 is similar to that in the above-described embodiment and thus will not be described.
- the design data on the template 102 is used to simulate the separation between the template 102 and the resist 101 .
- timings for introducing and discharging gas into or from the space 104 are calculated depending on a density distribution of the pattern. Imprinting is performed based on the calculated timings. For example, it is assumed that a template including an outer area with a high pattern density and an adjacent inner area with a low pattern density is separated from the resist. Then, a high pressure may be applied to the back surface of the template when the area with the low pattern density is separated compared to when the area with the high pattern density is separated. In contrast, it is assumed that a template including an outer area with a low pattern density and an adjacent inner area with a high pattern density is separated from the resist. Then, a low pressure may be applied to the back surface of the template when the area with the high pattern density is separated compared to when the area with the low pattern density is separated.
- the design data on the template 102 is used to perform pre-simulation to calculate the timings for introducing and discharging the gas for the template 102 .
- the gas is introduced into or discharged from the back surface side of the template 102 through the inlet 105 in accordance with the calculated timings. This enables inhibition of a possible defect in the resist 101 , as is the case with the embodiment and modifications 1 and 2 described above.
- the separated area (or non-separated area) can be determined using a CCD.
- the timings for introducing and discharging the gas depending on the density of the pattern can be calculated by observing the separated area (or non-separated area) with a CCD and referencing the design data on the template 102 . Imprinting is performed based on the calculated timings.
- the gas is introduced into or discharged from the back surface side of the template 102 based on the separation state of the resist 101 and the design data on the template 102 . This enables inhibition of a possible defect in the resist 101 , as is the case with the embodiment and modifications 1, 2, and 3 described above.
- the gas is used to pressurize the back surface of the template 102 .
- any method of applying pressure to the back surface to the template 102 enables the effects of above-described embodiment and modifications to be exerted.
- a piezoelectric element may be used or a liquid may be introduced into the space 104 , to apply pressure to the back surface of the template 102 .
- pressure control involving a pressurization timing, a pressure reduction timing, and the like is preformed during a single separation operation (one shot).
- a rapid change in load or speed can be suppressed to some degree.
- the template can be inhibited from being rolled back and can be separated from the substrate while remaining parallel to the substrate. This enables a possible defect in the resist 101 to be prevented.
- pressure is exerted on the back surface of the template 102 to control the load imposed on the template 102 or the speed of the template 102 .
- a force required to lift the template 102 may further be adjusted.
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (30)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/717,980 USRE46191E1 (en) | 2009-03-25 | 2015-05-20 | Imprint pattern forming method |
| US15/292,073 USRE47093E1 (en) | 2009-03-25 | 2016-10-12 | Imprint pattern forming method |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-073897 | 2009-03-25 | ||
| JP2009073897A JP4940262B2 (en) | 2009-03-25 | 2009-03-25 | Imprint pattern forming method |
| US12/726,503 US8444889B2 (en) | 2009-03-25 | 2010-03-18 | Imprint pattern forming method |
| US14/717,980 USRE46191E1 (en) | 2009-03-25 | 2015-05-20 | Imprint pattern forming method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/726,503 Reissue US8444889B2 (en) | 2009-03-25 | 2010-03-18 | Imprint pattern forming method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/726,503 Continuation US8444889B2 (en) | 2009-03-25 | 2010-03-18 | Imprint pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USRE46191E1 true USRE46191E1 (en) | 2016-11-01 |
Family
ID=42783134
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/726,503 Ceased US8444889B2 (en) | 2009-03-25 | 2010-03-18 | Imprint pattern forming method |
| US14/717,980 Active 2031-01-19 USRE46191E1 (en) | 2009-03-25 | 2015-05-20 | Imprint pattern forming method |
| US15/292,073 Active 2031-01-19 USRE47093E1 (en) | 2009-03-25 | 2016-10-12 | Imprint pattern forming method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/726,503 Ceased US8444889B2 (en) | 2009-03-25 | 2010-03-18 | Imprint pattern forming method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/292,073 Active 2031-01-19 USRE47093E1 (en) | 2009-03-25 | 2016-10-12 | Imprint pattern forming method |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US8444889B2 (en) |
| JP (1) | JP4940262B2 (en) |
| KR (1) | KR101170225B1 (en) |
| TW (1) | TWI451963B (en) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8945444B2 (en) * | 2007-12-04 | 2015-02-03 | Canon Nanotechnologies, Inc. | High throughput imprint based on contact line motion tracking control |
| US8652393B2 (en) * | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
| JP5930622B2 (en) * | 2010-10-08 | 2016-06-08 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
| JP5747670B2 (en) * | 2011-06-10 | 2015-07-15 | 大日本印刷株式会社 | Molded member and manufacturing method thereof |
| JP5458068B2 (en) * | 2011-08-31 | 2014-04-02 | 株式会社東芝 | Pattern transfer apparatus and semiconductor device manufacturing method |
| JP6004738B2 (en) * | 2011-09-07 | 2016-10-12 | キヤノン株式会社 | Imprint apparatus and article manufacturing method using the same |
| JP5893303B2 (en) * | 2011-09-07 | 2016-03-23 | キヤノン株式会社 | Imprint apparatus and article manufacturing method using the same |
| JP2013118233A (en) * | 2011-12-02 | 2013-06-13 | Hitachi High-Technologies Corp | Microstructure transfer device |
| KR20130085759A (en) | 2012-01-20 | 2013-07-30 | 삼성전자주식회사 | Stamp and method of fabricating stamp and imprinting method using the same |
| JP5824380B2 (en) * | 2012-02-07 | 2015-11-25 | キヤノン株式会社 | Imprint apparatus, imprint method, and article manufacturing method |
| JP5824379B2 (en) | 2012-02-07 | 2015-11-25 | キヤノン株式会社 | Imprint apparatus, imprint method, and article manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201036801A (en) | 2010-10-16 |
| KR101170225B1 (en) | 2012-07-31 |
| JP2010221374A (en) | 2010-10-07 |
| US8444889B2 (en) | 2013-05-21 |
| JP4940262B2 (en) | 2012-05-30 |
| TWI451963B (en) | 2014-09-11 |
| KR20100107390A (en) | 2010-10-05 |
| USRE47093E1 (en) | 2018-10-23 |
| US20100244326A1 (en) | 2010-09-30 |
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