USRE35204E - Acoustic wave devices employing surface skimming bulk waves - Google Patents
Acoustic wave devices employing surface skimming bulk waves Download PDFInfo
- Publication number
- USRE35204E USRE35204E US08/412,447 US41244795A USRE35204E US RE35204 E USRE35204 E US RE35204E US 41244795 A US41244795 A US 41244795A US RE35204 E USRE35204 E US RE35204E
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- substrate
- flat surface
- transducers
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- cut
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02236—Details of surface skimming bulk wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/30—Time-delay networks
Definitions
- This invention relates to acoustic wave devices in which acoustic waves are caused to travel in the bulk of a substrate between two transducers.
- an oscillator which comprises an acoustic wave delay line in the feedback loop of an amplifier.
- This delay line comprises a piezo electric substrate carrying two interdigital comb transducers which can launch and receive surface acoustic waves along or in the surface between the transducers.
- the delay line can operate using bulk acoustic waves i.e., waves travelling beneath the substrate surface. This gives insensitivity to surface contamination.
- an acoustic wave device comprises a piezo electric substrate having a flat surface which carries at least two transducers for launching and receiving acoustic waves into and from the bulk of the substrate between the two transducers, the piezo electric substrate having an orientation as hereinafter defined.
- the orientation of the flat surface of the substrate according to this invention is:- a rotated Y-cut quartz (rotated about the X axis) with the transducers arranged to propagate acoustic waves perpendicular to the X axis, the rotation about the X axis being in the range -60° to -45° preferably -55° to -48°, and also the range 30° to 45°; a rotated (about X axis) Y-cut LiTaO 3 , the rotation being in the range 36° and -54° ⁇ 3° and propagation along the X axis; rotated (about Y axis) Y-cut LiNiO 3 , the rotation being in the range 45° ⁇ 5° and -45° ⁇ 5° and propagation along the X axis.
- the transducers are interdigital comb transducers.
- Transducers may launch a number of types of bulk acoustic waves into a substrate; this is discussed in 1977 Ultarsonics Symposium Proc, papers T1, T2 articles Surface Skimming Bulk Waves, SSBW by M. F. Lewis, and Bandpass Filters Employing Surface Skimming Bulk Waves by T. I. Browning, D. J. Gunton, M. F. Lewis, and C. O. Newton.
- One type of bulk acoustic wave travels at and below the surface approximately parallel thereto; it is has been termed a surface skimming bulk wave (SSBW) and is horizontally polarized shear wave.
- Another SSBW is a longitudinal wave.
- Shear wave or quasi shear wave polarized in the plane of the surface this is necessary to prevent leakage of energy into the volume of the substrate;
- One class of cuts satisfying 1,2,5 is the rotated Y-cuts of quartz (i.e., rotated about X axis) with propagation perpendicular to the X axis.
- This whole class has k 2 ⁇ 0 for surface acoustic waves. It has a shear wave polarized in the X direction i.e., in the plane, which is necessary for the wave to propagate without serious leakage of energy into the substrate.
- two ranges of angles of rotation of the Y-cut satisfy condition 4.
- These ranges are -48° to -55° rotated Y cut which supports a shear wave with velocity about 3.3 ⁇ 10 5 cm/sec (closely analogous to the shear wave used in the normal AT cut bulk wave oscillator) and also the range 30° to 40° which supports a shear wave with velocity about 5.1 ⁇ 10 5 cm/sec (and closely analogous to the shear wave used in the normal BT cut bulk wave oscillator).
- Acoustic wave devices exhibit a frequency change with substrate temperature change thereby limiting the usefulness of some devices.
- These rotated Y cut quartz show a zero temperature co-efficient, i.e., a zero frequency change with changing substrate temperature, at a temperature value or range which is dependent on the angle of rotation. For example zero temperature coefficient for a number of quartz cuts occur as follows:
- the particular delay structure used to obtain the above results had an acoustic path 2,500 ⁇ long and a transducer length of 2,500 ⁇ with periodically thinned (missing) finger pairs, ⁇ being wavelength.
- Different transducer structures modify the above values.
- the acoustic propagation is symmetrical about the propagation direction so that the energy travels parallel to the k vector (i.e., no beam steering) and this also makes the insensitivity to small misorientations in manufacture.
- the class of cut with a shear wave velocity of 5.1 ⁇ 10 5 cm/sec is particularly attractive for high frequency oscillators.
- FIG. 1 shows some planes of cuts in quartz
- FIG. 2 shows a plan view of a bulk acoustic wave device connected to an amplifier to form an oscillator
- FIG. 3 shows an end view of FIG. 2.
- a Y-cut plate is one whose operating surface lies in the Z, X plane. If the plane is rotated by 35.3° about the X axis it is termed an AT-cut. Another cut is termined the BT-cut. Yet another is the ST-cut.
- the cuts used for bulk waves of this invention are about perpendicular to the AT-cut and BT-cut since the bulk waves are propagated approximately parallel to the flat surface and not across a thickness of a thin plate as in conventional bulk wave devices.
- a delay line comprises a quartz substrate 1 with a flat upper surface 2 orientated as hereinbefore defined.
- the bottom surface 3 is preferably angled by a few degrees and roughened to prevent reflections interfering with the wanted bulk waves.
- Two interdigital transducers 4, 5 are mounted on the flat surface 2.
- the transducers may each have 90 finger pairs and be separated (center to centre) by a distance almost equal to the transducer length to give mode suppression as taught in U.K. Pat. No. 1,451,326.
- An amplifier 6 is connected between the transducers 4, 5.
- the whole device may be encapsulated within a plastics material.
- transducer 4 In operation surface skimming bulk acoustic waves are launched by transducer 4 into the substrate. These SSBW travel beneath the surface 2 and are transduced back into electrical signals by transducer 5. Since the transducers 4, 5 are close together good coupling into and from the substrate occurs. However other transducer configurations are possible, for example ladder types as taught in the aforementiond U.K. Pat. No. 1,451,326.
- the invention is not limited to oscillators but can be used in place of surface acoustic wave delay lines in many filter applications.
- Substrates other than quartz may be used for example LiNbO 3 and LiTaO 3 but the cuts used must be orientated to give properties listed at 1 to 5 above.
- these include approximately -36° ⁇ 3° and -54° ⁇ 3° (orthogonal) rotated (about X-axis) Y-cuts containing the directions of polarization of the shear bulk waves which propagate along the X-axis of the crystal (as calculated for an infinite medium). The acoustic wave propagation is in the X-direction.
- the cuts are 45° ⁇ 5° and -45° ⁇ 5° rotated Y cuts, propagation is in the X direction.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
An acoustic wave device employing surfaces skimming bulk waves comprises a piezo electric substrate having a flat surface which carries an input transducer and an output transducer for respectively lanuching and receiving acoustic waves into and from the bulk of the substrate. The substrate may be of quartz, lithium tantalate, or lithium niobate and has the flat surface orientated so that a surface skimming bulk wave is launched without generation of surface acoustic waves.
Description
This invention relates to acoustic wave devices in which acoustic waves are caused to travel in the bulk of a substrate between two transducers.
In U.K. Patent specification Number 1,451,326, corresponding to U.S. Pat. No. 3,950,713, an oscillator is described which comprises an acoustic wave delay line in the feedback loop of an amplifier. This delay line comprises a piezo electric substrate carrying two interdigital comb transducers which can launch and receive surface acoustic waves along or in the surface between the transducers. Alternatively, when using quartz slices orientated at right angles to the AT-cut plane and to the YZ-plane the delay line can operate using bulk acoustic waves i.e., waves travelling beneath the substrate surface. This gives insensitivity to surface contamination.
According to this invention an acoustic wave device comprises a piezo electric substrate having a flat surface which carries at least two transducers for launching and receiving acoustic waves into and from the bulk of the substrate between the two transducers, the piezo electric substrate having an orientation as hereinafter defined.
The orientation of the flat surface of the substrate according to this invention is:- a rotated Y-cut quartz (rotated about the X axis) with the transducers arranged to propagate acoustic waves perpendicular to the X axis, the rotation about the X axis being in the range -60° to -45° preferably -55° to -48°, and also the range 30° to 45°; a rotated (about X axis) Y-cut LiTaO3, the rotation being in the range 36° and -54°±3° and propagation along the X axis; rotated (about Y axis) Y-cut LiNiO3, the rotation being in the range 45°±5° and -45°±5° and propagation along the X axis.
Preferably the transducers are interdigital comb transducers.
Transducers may launch a number of types of bulk acoustic waves into a substrate; this is discussed in 1977 Ultarsonics Symposium Proc, papers T1, T2 articles Surface Skimming Bulk Waves, SSBW by M. F. Lewis, and Bandpass Filters Employing Surface Skimming Bulk Waves by T. I. Browning, D. J. Gunton, M. F. Lewis, and C. O. Newton. One type of bulk acoustic wave travels at and below the surface approximately parallel thereto; it is has been termed a surface skimming bulk wave (SSBW) and is horizontally polarized shear wave. Another SSBW is a longitudinal wave.
The following properties are desirable or necessary for a surface skimming bulk wave device:
1. No surface acoustic wave coupling;
2. Shear wave or quasi shear wave polarized in the plane of the surface; this is necessary to prevent leakage of energy into the volume of the substrate;
3. A good k2 for the bulk waves 2. above with a small coupling to other bulk waves;
4. Zero temperature co-efficient for bulk waves;
5. Beam stearing or focussing properties.
One class of cuts satisfying 1,2,5 is the rotated Y-cuts of quartz (i.e., rotated about X axis) with propagation perpendicular to the X axis. This whole class has k2 ═0 for surface acoustic waves. It has a shear wave polarized in the X direction i.e., in the plane, which is necessary for the wave to propagate without serious leakage of energy into the substrate. Also within the class, two ranges of angles of rotation of the Y-cut satisfy condition 4. These ranges are -48° to -55° rotated Y cut which supports a shear wave with velocity about 3.3×105 cm/sec (closely analogous to the shear wave used in the normal AT cut bulk wave oscillator) and also the range 30° to 40° which supports a shear wave with velocity about 5.1×105 cm/sec (and closely analogous to the shear wave used in the normal BT cut bulk wave oscillator). Acoustic wave devices exhibit a frequency change with substrate temperature change thereby limiting the usefulness of some devices. These rotated Y cut quartz show a zero temperature co-efficient, i.e., a zero frequency change with changing substrate temperature, at a temperature value or range which is dependent on the angle of rotation. For example zero temperature coefficient for a number of quartz cuts occur as follows:
______________________________________ Rotation degree Temperature °C. ______________________________________ -49 -30 -49.5 -10 -50 +10 -50.5 +40 -50.5 to -51 Over 60 extending for a range of temperatures 35 -10 35.3 +15 36 30 36.5 50 37 70 ______________________________________
The particular delay structure used to obtain the above results had an acoustic path 2,500 λ long and a transducer length of 2,500 λ with periodically thinned (missing) finger pairs, λ being wavelength. Different transducer structures modify the above values. For rotated Y cuts in the above ranges with propagation perpendicular to the X axis, the acoustic propagation is symmetrical about the propagation direction so that the energy travels parallel to the k vector (i.e., no beam steering) and this also makes the insensitivity to small misorientations in manufacture.
The class of cut with a shear wave velocity of 5.1×105 cm/sec is particularly attractive for high frequency oscillators. One has been made which showed a parabolic frequency temperature variation (a 35.3° rotated Y cut) with inversion temperature at 20° C., measured on an oscillator having a delay line of path length 2,500 λwavelengths.
The invention will now be described by way of example only with reference to the accompanying drawings in which:
FIG. 1 shows some planes of cuts in quartz;
FIG. 2 shows a plan view of a bulk acoustic wave device connected to an amplifier to form an oscillator;
FIG. 3 shows an end view of FIG. 2.
The three orthogonal axes of a crystal are shown in FIG. 1. A Y-cut plate is one whose operating surface lies in the Z, X plane. If the plane is rotated by 35.3° about the X axis it is termed an AT-cut. Another cut is termined the BT-cut. Yet another is the ST-cut. The cuts used for bulk waves of this invention are about perpendicular to the AT-cut and BT-cut since the bulk waves are propagated approximately parallel to the flat surface and not across a thickness of a thin plate as in conventional bulk wave devices.
As shown in FIGS. 2, 3 a delay line comprises a quartz substrate 1 with a flat upper surface 2 orientated as hereinbefore defined. The bottom surface 3 is preferably angled by a few degrees and roughened to prevent reflections interfering with the wanted bulk waves. Two interdigital transducers 4, 5 are mounted on the flat surface 2. As an example the transducers may each have 90 finger pairs and be separated (center to centre) by a distance almost equal to the transducer length to give mode suppression as taught in U.K. Pat. No. 1,451,326. An amplifier 6 is connected between the transducers 4, 5. The whole device may be encapsulated within a plastics material.
In operation surface skimming bulk acoustic waves are launched by transducer 4 into the substrate. These SSBW travel beneath the surface 2 and are transduced back into electrical signals by transducer 5. Since the transducers 4, 5 are close together good coupling into and from the substrate occurs. However other transducer configurations are possible, for example ladder types as taught in the aforementiond U.K. Pat. No. 1,451,326.
The invention is not limited to oscillators but can be used in place of surface acoustic wave delay lines in many filter applications.
Substrates other than quartz may be used for example LiNbO3 and LiTaO3 but the cuts used must be orientated to give properties listed at 1 to 5 above. For LiTaO3 these include approximately -36°±3° and -54°±3° (orthogonal) rotated (about X-axis) Y-cuts containing the directions of polarization of the shear bulk waves which propagate along the X-axis of the crystal (as calculated for an infinite medium). The acoustic wave propagation is in the X-direction. For LiNbO3 the cuts are 45°±5° and -45°±5° rotated Y cuts, propagation is in the X direction.
It should be understood that this list of properties can be departed from slightly since they are ideal, e.g. a small amount of surface wave coupling can be tolerated (and removed by surface mounted absorbers) but it is preferably as low as possible.
Claims (7)
1. An acoustic wave device employing surface skimming bulk waves, comprising a piezo electric substrate having a flat surface and an input transducer and an output transducer mounted on said flat surface for respectively launching acoustic waves in and receiving acoustic waves from the substrate, the substrate having an orientation of said flat surface which is a rotated, about the crystalline X axis, Y cut material, said substrate and its associated transducers being selected from one of the following groups:
(a) a quartz substrate with the rotation of cut about the X axis being in the range -60° to -45° and 30° to 40°, and with said transducers being so arranged on said surface that propagation of the acoustic wave vector is perpendicular to the X axis; and
(b) a lithium tantalate substrate with the rotation of cut about the X axis being in the ranges 33° to 39° and -51° to -57°, and with said transducers being so arranged on said surface that propagation of the acoustic wave vector is parallel to the Y axis.
2. A device according to claim 1 wherein the substrate is quartz and the rotation of cut is in the range -55° to -48° inclusive.
3. A device according to claim 1 wherein the substrate is quartz and the rotation of cut is in the range -51° to -49° inclusive.
4. A device according to claim 1 wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface.
5. A device according to claim 1 wherein the transducers are interdigital finger comb transducers. .Iadd.
6. An acoustic wave device employing surface skimming bulk waves, comprising a piezo electric substrate having a flat surface and an input transducer and an output transducer mounted on said flat surface for respectively launching acoustic waves in and receiving acoustic waves from the substrate, the substrate having an orientation of said flat surface which is rotated, about the crystalline X axis, Y-cut material, said substrate and its associated transducers is a lithium substrate with the rotation of cut about the X axis being approximately 36°, and with said transducers being so arranged on said surface that propagation of the acoustic wave vector is parallel to the X axis. .Iaddend. .Iadd.7. A device according to claim 6, wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface. .Iaddend. .Iadd.8. A device according to claim 6, wherein the transducers are interdigital finger comb transducers. .Iaddend. .Iadd.9. An acoustic wave device employing surface skimming bulk waves, comprising a piezo electric substrate having a flat surface and an input transducer and an output transducer mounted on said flat surface for respectively launching acoustic waves in and receiving acoustic waves from the substrate, the substrate having an orientation of said flat surface which is rotated, about the crystalline X axis, Y-cut material, said substrate and its associated transducers is a lithium tantalate substrate with the rotation of cut about the X axis being 36° and with said transducers being so arranged on said surface that propagation of the acoustic wave vector
is parallel to the X axis. .Iaddend. .Iadd.10. A device according to claim 9, wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface. .Iaddend. .Iadd.11. A device according to claim 9, wherein the transducers are interdigital finger comb transducers. .Iaddend. .Iadd.12. An acoustic wave device employing surface skimming bulk waves, comprising a piezo electric substrate having a flat surface and an input transducer and an output transducer mounted on said flat surface for respectively launching acoustic waves in and receiving acoustic waves from the substrate, the substrate having an orientation of said flat surface which is rotated, about the crystalline X axis, Y-cut material, said substrate and its associated transducers in a lithium tantalate substrate with the rotation of cut about the X axis being approxiomately 36° i.e. from 33° to 39° and with said transducers being so arranged on said surface that propagation of the acoustic wave vector is parallel to the X axis. .Iaddend. .Iadd.13. A device according to claim 12, wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface. .Iaddend. .Iadd.14. A device according to claim 13, wherein the transducers are interdigital finger comb transducers. .Iaddend.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/412,447 USRE35204E (en) | 1977-01-24 | 1995-03-29 | Acoustic wave devices employing surface skimming bulk waves |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2750/77 | 1977-01-24 | ||
GB2750/77A GB1591624A (en) | 1977-01-24 | 1977-01-24 | Acoustic wave devices |
US05/869,738 US4159435A (en) | 1977-01-24 | 1978-01-16 | Acoustic wave devices employing surface skimming bulk waves |
US08/412,447 USRE35204E (en) | 1977-01-24 | 1995-03-29 | Acoustic wave devices employing surface skimming bulk waves |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/869,738 Reissue US4159435A (en) | 1977-01-24 | 1978-01-16 | Acoustic wave devices employing surface skimming bulk waves |
Publications (1)
Publication Number | Publication Date |
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USRE35204E true USRE35204E (en) | 1996-04-09 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US05/869,738 Ceased US4159435A (en) | 1977-01-24 | 1978-01-16 | Acoustic wave devices employing surface skimming bulk waves |
US08/412,447 Expired - Lifetime USRE35204E (en) | 1977-01-24 | 1995-03-29 | Acoustic wave devices employing surface skimming bulk waves |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US05/869,738 Ceased US4159435A (en) | 1977-01-24 | 1978-01-16 | Acoustic wave devices employing surface skimming bulk waves |
Country Status (7)
Country | Link |
---|---|
US (2) | US4159435A (en) |
JP (2) | JPS53105394A (en) |
CA (1) | CA1108746A (en) |
DE (1) | DE2802946A1 (en) |
FR (1) | FR2378357A1 (en) |
GB (1) | GB1591624A (en) |
NL (1) | NL186938C (en) |
Cited By (9)
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US5714830A (en) * | 1995-01-24 | 1998-02-03 | Murata Manufacturing Co., Ltd. | Free edge reflective-type surface acoustic wave device |
US5760522A (en) * | 1995-04-10 | 1998-06-02 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
US6317015B1 (en) | 1995-10-13 | 2001-11-13 | Fujitsu Limited | Surface acoustic wave device using a leaky surface acoustic wave with an optimized cut angle of a piezoelectric substrate |
US6378370B1 (en) * | 2000-03-08 | 2002-04-30 | Sensor Research & Development Corp. | Temperature compensated surface-launched acoustic wave sensor |
US20060145568A1 (en) * | 2004-12-03 | 2006-07-06 | Epson Toyocom Corporation | Surface acoustic wave device |
US20060145569A1 (en) * | 2005-01-06 | 2006-07-06 | Epson Toyocom Corporation | Surface acoustic wave device |
US20070101804A1 (en) * | 2003-07-29 | 2007-05-10 | Duncan Billson | Ultrasonic liquid viscosity sensor using mode conversion |
US20070194657A1 (en) * | 2004-04-01 | 2007-08-23 | Toyo Communication Equipment Co., Ltd. | Surface acoustic wave device |
US20090152981A1 (en) * | 2005-09-30 | 2009-06-18 | Epson Toyocom Corporation | Surface acoustic wave device, module device, oscillation circuit, and method for manufacturing surface acoustic wave device |
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GB2033185B (en) * | 1978-09-22 | 1983-05-18 | Secr Defence | Acoustic wave device with temperature stabilisation |
US4290033A (en) * | 1979-06-04 | 1981-09-15 | Trw Inc. | Shallow bulk acoustic wave devices employing energy trapping |
JPS56122216A (en) * | 1980-02-29 | 1981-09-25 | Fujitsu Ltd | Elastic surface wave element |
US4707631A (en) * | 1984-02-15 | 1987-11-17 | Trw Inc. | Isotropic acoustic wave substrate |
US5081389A (en) * | 1990-11-30 | 1992-01-14 | Ascom Zelcom Ag. | Crystal cut angles for lithium tantalate crystal for novel surface acoustic wave devices |
US5334960A (en) * | 1993-02-16 | 1994-08-02 | Motorola, Inc. | Conjugately matched acoustic wave transducers and method |
DE69415202T2 (en) * | 1993-04-15 | 1999-06-17 | Murata Manufacturing Co | Piezoelectric filter |
JPH08265087A (en) * | 1995-03-22 | 1996-10-11 | Mitsubishi Electric Corp | Surface acoustic wave filter |
EP0758818B1 (en) * | 1995-08-15 | 2000-03-22 | CTS Corporation | Surface-skimming bulk wave substrate and device including same |
RU2099857C1 (en) * | 1996-01-10 | 1997-12-20 | Наталья Федоровна Науменко | Surface acoustical wave radio-frequency device |
DE19630890A1 (en) * | 1996-07-31 | 1998-02-05 | Fraunhofer Ges Forschung | Surface wave liquid sensor |
DE19758195C2 (en) * | 1997-12-30 | 2000-05-18 | Siemens Ag | Surface wave (SAW) component on in particular lithium tantalate or niobate substrate |
DE19758198A1 (en) | 1997-12-30 | 1999-08-19 | Siemens Ag | Surface wave (SAW) device on pyroelectric single crystal substrate |
US6097131A (en) * | 1998-03-19 | 2000-08-01 | Sawtek Inc. | Optimal cut for SAW devices on langatate |
JPWO2006137464A1 (en) | 2005-06-21 | 2009-01-22 | エプソントヨコム株式会社 | Surface acoustic wave device, module, and oscillator |
JPWO2007004661A1 (en) * | 2005-06-30 | 2009-01-29 | エプソントヨコム株式会社 | Surface acoustic wave device |
EP1937414A4 (en) * | 2005-09-19 | 2013-01-02 | Univ Witwatersrand Jhb | Oramucosal pharmaceutical dosage form |
DE102006019961B4 (en) * | 2006-04-28 | 2008-01-10 | Epcos Ag | Electroacoustic component |
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GB1451326A (en) * | 1973-02-16 | 1976-09-29 | Nat Res Dev | Acoustic wave devices |
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1977
- 1977-01-24 GB GB2750/77A patent/GB1591624A/en not_active Expired
-
1978
- 1978-01-16 US US05/869,738 patent/US4159435A/en not_active Ceased
- 1978-01-19 FR FR7801481A patent/FR2378357A1/en active Granted
- 1978-01-23 CA CA295,456A patent/CA1108746A/en not_active Expired
- 1978-01-24 JP JP587778A patent/JPS53105394A/en active Granted
- 1978-01-24 DE DE19782802946 patent/DE2802946A1/en active Granted
- 1978-01-24 NL NLAANVRAGE7800821,A patent/NL186938C/en not_active IP Right Cessation
-
1986
- 1986-10-15 JP JP61243312A patent/JPS62149210A/en active Pending
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1995
- 1995-03-29 US US08/412,447 patent/USRE35204E/en not_active Expired - Lifetime
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US3995740A (en) * | 1971-12-23 | 1976-12-07 | Owens-Illinois, Inc. | Nestable fabricated thermoplastic container |
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Title |
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Nakamura et al,: "Sh-Type and Rayleigh-Type Surface Waves on Rotated Y-Cut LiTsO3 "; Ultrasonic Symposium Proceedings; 1977; pp. 819-822 (With Translation). |
Nakamura et al,: Sh Type and Rayleigh Type Surface Waves on Rotated Y Cut LiTsO 3 ; Ultrasonic Symposium Proceedings; 1977; pp. 819 822 (With Translation). * |
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Also Published As
Publication number | Publication date |
---|---|
JPS53105394A (en) | 1978-09-13 |
NL7800821A (en) | 1978-07-26 |
GB1591624A (en) | 1981-06-24 |
DE2802946A1 (en) | 1978-08-03 |
NL186938C (en) | 1991-04-02 |
FR2378357A1 (en) | 1978-08-18 |
JPS62149210A (en) | 1987-07-03 |
DE2802946C2 (en) | 1989-12-07 |
CA1108746A (en) | 1981-09-08 |
FR2378357B1 (en) | 1984-02-17 |
US4159435A (en) | 1979-06-26 |
JPS6216050B2 (en) | 1987-04-10 |
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