GB1591625A - Acoustic wave devices - Google Patents

Acoustic wave devices Download PDF

Info

Publication number
GB1591625A
GB1591625A GB218180A GB218180A GB1591625A GB 1591625 A GB1591625 A GB 1591625A GB 218180 A GB218180 A GB 218180A GB 218180 A GB218180 A GB 218180A GB 1591625 A GB1591625 A GB 1591625A
Authority
GB
United Kingdom
Prior art keywords
substrate
flat surface
transducers
acoustic wave
bulk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB218180A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Priority to GB218180A priority Critical patent/GB1591625A/en
Publication of GB1591625A publication Critical patent/GB1591625A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02023Characteristics of piezoelectric layers, e.g. cutting angles consisting of quartz
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02047Treatment of substrates
    • H03H9/02055Treatment of substrates of the surface including the back surface

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

(54) ACOUSTIC WAVE DEVICES (71) I, Secretary of State for Defence, Whitehall, London, A British Corporation Sole, do hereby declare the invention, for which I pray that a patent may be granted to me, and the method by which it is to be performed, to be particularly described in and by the following statement: This invention relates to acoustic wave devices in which acoustic waves are caused to travel in the bulk of a substrate between two transducers.
In U.K. Patent Specification Number 1,451,326 an oscillator is described which comprises an acoustic wave delay line in the feedback loop of an amplifier. This delay line comprises a piezo electric substrate carrying two interdigital comb transducers which can launch and receive surface acoustic waves along or in the surface between the transducers.
Alternatively, when using quartz slices orientated at right angles to the AT-cut plane and to the YZ plane the delay line can operate using bulk acoustic waves i.e. waves travelling beneath the substrate surface. This gives insensitivity to surface contamination.
The present application is divided out from co-pending application No. 2750/77 Serial No. 1991624 which describes and claims a quartz substrate having a particular range of cuts.
According to this invention a bulk acoustic wave device comprises a lithium tantalate piezo electric substrate having a flat surface which carries at least two transducers for launching and receiving acoustic waves into and from the bulk of the substrate between the two transducers, the flat surface lying in a plane that is rotated about the X axis (a rotated Y-cut) by an amount in the range 36 + 3 or -54" + 3 with the transducers arranged to provide a propagation of acoustic wave vector that is parallel to the X axis.
This rotation of cuts contains the directions of polarisation of the shear bulk waves which propagate along the X-axis of the crystal (as calculated for an infinite medium).
Preferably the transducers are interdigital comb transducers.
Transducers may launch a number of types of bulk acoustic waves into a substrate, this is discussed in 1977 Ultrasonics Symposium Proc, papers T1, T2 articles Surface Skimming Bulk Waves by M.F. Lewis, and Bandpass Filters by T.I. Browning, D.J. Gunton, M.F.
Lewis, C.O. Newton. One type of bulk acoustic wave travels at and below the surface approximately parallel thereto, it has been termed a surface skimming bulk wave (SSBW) and is a horizontally polarised shear wave. Another SSBW is a longitudinal wave.
The following properties are desirable or necessary for a surface skimming bulk wave device: 1. No surface acoustic wave coupling; 2. Shear wave or quasi shear wave polarised in the plane of the surface, this is necessary to prevent leakage of energy into the volume of the substrate; 3. A good k2 for the bulk waves 2, above with a small coupling to other bulk waves; 4. Zero temperature co-efficient for bulk waves; 5. No beam steering or focussing properties.
As described in copending application number 2750/77 (Serial No. 1591624) one class of cuts satisfying 1, 2, 5 is the rotated Y-cuts of quartz (i.e. rotated about X axis) with propagation perpendicular to the X axis. This whole class has k2 = 6 for surface acoustic waves. It has a shear wave polarised in the X direction i.e. in the plane, which is necessary for the wave to propagate without serious leakage of energy into the substrate. Also within the class, two ranges of angles of rotation of the Y-cut satisfy condition 4.These ranges are -48" to -55 rotated Y cut which supports a shear wave with velocity about 3.3 x 105 cm/sec (closely analogous to the shear wave used in the normal AT cut bulk wave oscillator) and also the range 30 to 400 which supports a shear wave with velocity about 5.1 x 105 cm/sec (and closely analogous to the shear wave used in the normal BT cut bulk wave oscillator).
Acoustic wave devices exhibit a frequency change with substrate temperature change thereby limiting the usefulness of some devices. These rotated Y cut quartz devices show a zero temperature co-efficient, i.e. a zero frequency change with changing substrate temperature, at a temperature value or range which is dependent on the angle of rotation.
For example zero temperature coefficient for a number of quartz cuts occurs as follows: Rotation degree Temperature "C - 49 - 30 - 49.5 - 10 - 50 + 10 - 50.5 + 40 - 50.5 to - 51 Over 60 extending for a range of temperatures 35 - 10 35.3 + 15 36 30 36.5 50 37 70 The particular delay structure used to obtain the above results had an acoustic path 2,500X long and a transducer length of 2,500k with periodically thinned (missing) finger pairs, k being wavelength. Different transducer structures modify the above values.For rotated Y cuts in the above ranges with propagation perpendicular to the X axis, the acoustic propagation is symmetrical about the propagation direction so that the energy travels parallel to the k vector (i.e. no beam steering) and this also makes for insensitivity to small misorientations in manufacture.
The class of cut with a shear wave velocity of 5.1 x 105 cm/sec is particularly attractive for high frequency oscillators. One has been made which showed a parabolic frequency temperature variation (a 35.3 rotated Y cut) with inversion temperature at 20"C, measured on an oscillator having a delay line of path length 2,500 X wavelengths.
The invention will now be described by way of example only with reference to the drawings accompanying the Provisional Specification in which: Figure 1 shows some planes of cuts in quartz and defines crystalline axes; Figure 2 shows a plan view of a bulk acoustic wave device connected to an amplifier to form an oscillator; Figure 3 shows an end view of Figure 2.
The three orthogonal axes of a crystal are shown in Figure 1. A Y-cut plate is one whose operating surface lies in the Z, X plane. If the plane is rotated by 35.3 about the X axis it is termed an AT-cut. Another cut is termed the BT-cut. Yet another is the ST-cut. The cuts used for bulk waves in quartz are about perpendicular to the AT-cut or BT-cut since the bulk waves are propagated approximately parallel to the flat surface and not across a thickness of a thin plate as in conventional bulk wave devices.
As shown in Figures 2, 3 a delay line comprises a lithium tantalate substrate 1 with a flat upper surface 2 orientated as hereinbefore defined. The bottom surface 3 is preferably angled by a few degrees and roughened to prevent reflections interfering with the wanted bulk waves. Two interdigital transducers 4, 5 are mounted on the flat surface 2. As an example the transducers may each have 90 finger pairs and be separated (centre to centre) by a distance almost equal to the transducer length to give mode suppression as taught in U.K. Patent 1,451,326. An amplifier 6 is connected between the transducers 4, 5. The whole device may be encapsulated within a plastics material.
In operation surface skimming bulk acoustic waves are launched by transducer 4 into the substrate. These SSBW travel beneath the surface 2 and are transduced back into electrical signals by transducer 5. Since the transducers 4, 5 are close together good coupling into and from the substrate occurs. However other transducer configurations are possible, for example ladder types as taught in U.K. 1,451,326.
The invention is not limited to oscillators but can be used in place of surface acoustic wave delay lines and in many filter applications.
Substrates other than LiTaO3 may be used for example LiNbO3 and quartz (as described in application number 2750/77) but the cuts used must be orientated to give properties listed at 1 to 5 above. Devices with a substrate of quartz or lithium niobate do not, however, fall within the scope of the present invention. For LiNbO3 the cuts are 45" + 5 and 450 + 5 rotated Y cuts, propagation is in the X direction.
It should be understood that this list of properties can be departed from slightly since they are ideal, e.g. a small amount of surface wave coupling can be tolerated (and removed by surface mounted absorbers) but it is preferably as low as possible.
WHAT I CLAIM IS: 1. A bulk acoustic wave device comprising a lithium tantalate piezo electric substrate having a flat surface, an input transducer and an output transducer mounted on the flat surface for respectively launching acoustic waves in and receiving acoustic waves from the bulk of the substrate, the flat surface lying in a plane that is rotated about the crystalline X axis (a rotated Y-cut) by an amount in the range 33 to 390 or 510 to 570 with the transducers arranged to provide a propagation of acoustic wave vector that is parallel to the X axis.
2. A device as claimed in claim 1 wherein the transducers are interdigital finger comb transducers.
3. A device according to claim 1 wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface.
4. A device as claimed in claim 1 and further comprising an absorber mounted on the flat surface between the transducers.
5. An acoustic wave device as claimed in claim 1 constructed, arranged and adapted to operate substantially as hereinbefore described with reference to the drawings accompanying the Provisional Specification.
**WARNING** end of DESC field may overlap start of CLMS **.

Claims (5)

**WARNING** start of CLMS field may overlap end of DESC **. from the substrate occurs. However other transducer configurations are possible, for example ladder types as taught in U.K. 1,451,326. The invention is not limited to oscillators but can be used in place of surface acoustic wave delay lines and in many filter applications. Substrates other than LiTaO3 may be used for example LiNbO3 and quartz (as described in application number 2750/77) but the cuts used must be orientated to give properties listed at 1 to 5 above. Devices with a substrate of quartz or lithium niobate do not, however, fall within the scope of the present invention. For LiNbO3 the cuts are 45" + 5 and 450 + 5 rotated Y cuts, propagation is in the X direction. It should be understood that this list of properties can be departed from slightly since they are ideal, e.g. a small amount of surface wave coupling can be tolerated (and removed by surface mounted absorbers) but it is preferably as low as possible. WHAT I CLAIM IS:
1. A bulk acoustic wave device comprising a lithium tantalate piezo electric substrate having a flat surface, an input transducer and an output transducer mounted on the flat surface for respectively launching acoustic waves in and receiving acoustic waves from the bulk of the substrate, the flat surface lying in a plane that is rotated about the crystalline X axis (a rotated Y-cut) by an amount in the range 33 to 390 or 510 to 570 with the transducers arranged to provide a propagation of acoustic wave vector that is parallel to the X axis.
2. A device as claimed in claim 1 wherein the transducers are interdigital finger comb transducers.
3. A device according to claim 1 wherein the substrate has a face opposite said flat surface which is not parallel to said flat surface.
4. A device as claimed in claim 1 and further comprising an absorber mounted on the flat surface between the transducers.
5. An acoustic wave device as claimed in claim 1 constructed, arranged and adapted to operate substantially as hereinbefore described with reference to the drawings accompanying the Provisional Specification.
GB218180A 1978-01-11 1978-01-11 Acoustic wave devices Expired GB1591625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB218180A GB1591625A (en) 1978-01-11 1978-01-11 Acoustic wave devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB218180A GB1591625A (en) 1978-01-11 1978-01-11 Acoustic wave devices

Publications (1)

Publication Number Publication Date
GB1591625A true GB1591625A (en) 1981-06-24

Family

ID=9735015

Family Applications (1)

Application Number Title Priority Date Filing Date
GB218180A Expired GB1591625A (en) 1978-01-11 1978-01-11 Acoustic wave devices

Country Status (1)

Country Link
GB (1) GB1591625A (en)

Similar Documents

Publication Publication Date Title
US4159435A (en) Acoustic wave devices employing surface skimming bulk waves
US4272742A (en) Acoustic wave devices with temperature stabilization
US4204178A (en) Acoustic wave devices
KR101913933B1 (en) Acoustic wave device
US20040135650A1 (en) Surface acoustic wave device and filter using the same
US4342012A (en) Surface acoustic wave device
US6163099A (en) Surface acoustic wave device having a langasite single crystal substrate
US5965969A (en) Surface acoustic wave device using higher order mode of leakage elastic surface acoustic wave
EP0982856B1 (en) Surface acoustic wave resonator and transversal type surface acoustic wave filter
US4247835A (en) Surface acoustic wave devices
US3795879A (en) Composite dispersive filter
US4634914A (en) Piezoelectric SAW device with a corrugated surface
US4670681A (en) Singly rotated orientation of quartz crystals for novel surface acoustic wave devices
US5714830A (en) Free edge reflective-type surface acoustic wave device
US4636678A (en) Compensation of acoustic wave devices
GB1591625A (en) Acoustic wave devices
US4707631A (en) Isotropic acoustic wave substrate
Kojima et al. Velocity, electromechanical coupling factor and acoustic loss of surface shear waves propagating along x-axis on rotated Y-cut plates of LiNbO3
JPS5930332B2 (en) surface acoustic wave device
EP0982857A2 (en) Surface acoustic wave resonator, surface acoustic wave filter, duplexer, communications apparatus and surface acoustic wave apparatus, and production method of surface acoustic wave device
GB2328815A (en) Surface acoustic wave device having a langasite single crystal substrate
CA1263473A (en) Isotropic acoustic wave substrate
JP3378388B2 (en) Surface acoustic wave device
EP1037382A2 (en) Surface acoustic wave resonator, surface acoustic wave filter, duplexer, communication apparatus, and surface acoustic wave device
JP2023124332A (en) Acoustic wave device, filter and multiplexer

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19980110