USPP22761P2 - Potentilla plant named ‘White Lady’ - Google Patents

Potentilla plant named ‘White Lady’ Download PDF

Info

Publication number
USPP22761P2
USPP22761P2 US12/799,431 US79943110V USPP22761P2 US PP22761 P2 USPP22761 P2 US PP22761P2 US 79943110 V US79943110 V US 79943110V US PP22761 P2 USPP22761 P2 US PP22761P2
Authority
US
United States
Prior art keywords
potentilla
plants
close
new
plant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US12/799,431
Inventor
Pieter Kolster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spring Meadow Nursery Inc
Original Assignee
Spring Meadow Nursery Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spring Meadow Nursery Inc filed Critical Spring Meadow Nursery Inc
Priority to US12/799,431 priority Critical patent/USPP22761P2/en
Assigned to SPRING MEADOW NURSERY, INC. reassignment SPRING MEADOW NURSERY, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOLSTER, PIETER
Application granted granted Critical
Publication of USPP22761P2 publication Critical patent/USPP22761P2/en
Priority to US13/759,291 priority patent/US9257613B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01H—NEW PLANTS OR NON-TRANSGENIC PROCESSES FOR OBTAINING THEM; PLANT REPRODUCTION BY TISSUE CULTURE TECHNIQUES
    • A01H5/00—Angiosperms, i.e. flowering plants, characterised by their plant parts; Angiosperms characterised otherwise than by their botanic taxonomy
    • A01H5/02—Flowers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • Botanical designation Potentilla fruticosa.
  • the present invention relates to a new and distinct cultivar of Potentilla plant, botanically known as Potentilla fruticosa , and hereinafter referred to by the name ‘White Lady’.
  • the new Potentilla plant is a product of a planned breeding program conducted by the Inventor in Boskoop, The Netherlands.
  • the objective of the breeding program was to develop new long-flowering Potentilla plants with attractive flower color.
  • the new Potentilla plant originated from a self-pollination in July, 2004 of Potentilla fruticosa ‘Abbotswood’, not patented.
  • the new Potentilla plant was discovered and selected by the Inventor in August, 2005 as a flowering plant within the progeny of the stated self-pollination in a controlled environment in Boskoop, The Netherlands.
  • Plants of the new Potentilla have been observed under all possible cultural and environmental conditions.
  • the phenotype may vary somewhat with variations in cultural practices and environment such as temperature and light intensity without, however, any variance in genotype.
  • Plants of the new Potentilla can be compared to plants of the parent, ‘Abbotswood’. Plants of the new Potentilla differ primarily from plants of ‘Abbotswood’ in the following characteristics:
  • Plants of the new Potentilla can be compared to plants of Potentilla fruticosa ‘Red Lady’, disclosed in a U.S. Plant patent application Ser. No. 12/799,431. Plants of the new Potentilla differ primarily from plants of ‘Red Lady’ in flower color as plants of ‘Red Lady’ have red-colored flowers.
  • the photograph on the first sheet comprises a side perspective view of a typical flowering plant of ‘White Lady’ grown in a container.
  • the photograph at the top of the second sheet is a close-up view of typical leaves and stems of ‘White Lady’.
  • the photograph at the bottom of the second sheet is a close-up view of typical flowering stems of ‘White Lady’.

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Botany (AREA)
  • Developmental Biology & Embryology (AREA)
  • Environmental Sciences (AREA)
  • Physiology (AREA)
  • Health & Medical Sciences (AREA)
  • Led Devices (AREA)
  • Breeding Of Plants And Reproduction By Means Of Culturing (AREA)

Abstract

A new and distinct cultivar of Potentilla plant named ‘White Lady’, characterized by its upright and outwardly spreading plant habit; freely branching habit; large white-colored flowers; long flowering period; and good garden performance.

Description

Botanical designation: Potentilla fruticosa.
Cultivar denomination: ‘WHITE LADY’.
BACKGROUND OF THE INVENTION
The present invention relates to a new and distinct cultivar of Potentilla plant, botanically known as Potentilla fruticosa, and hereinafter referred to by the name ‘White Lady’.
The new Potentilla plant is a product of a planned breeding program conducted by the Inventor in Boskoop, The Netherlands. The objective of the breeding program was to develop new long-flowering Potentilla plants with attractive flower color.
The new Potentilla plant originated from a self-pollination in July, 2004 of Potentilla fruticosa ‘Abbotswood’, not patented. The new Potentilla plant was discovered and selected by the Inventor in August, 2005 as a flowering plant within the progeny of the stated self-pollination in a controlled environment in Boskoop, The Netherlands.
Asexual reproduction of the new Potentilla plant by vegetative cuttings in a controlled environment in Boijl, The Netherlands since June, 2006, has shown that the unique features of this new Potentilla plant are stable and reproduced true to type in successive generations.
SUMMARY OF THE INVENTION
Plants of the new Potentilla have been observed under all possible cultural and environmental conditions. The phenotype may vary somewhat with variations in cultural practices and environment such as temperature and light intensity without, however, any variance in genotype.
The following traits have been repeatedly observed and are determined to be the unique characteristics of ‘White Lady’. These characteristics in combination distinguish ‘White Lady’ as a new and distinct Potentilla plant:
    • 1. Upright and outwardly spreading plant habit.
    • 2. Freely branching habit.
    • 3. Large white-colored flowers.
    • 4. Long flowering period.
    • 5. Good garden performance.
Plants of the new Potentilla can be compared to plants of the parent, ‘Abbotswood’. Plants of the new Potentilla differ primarily from plants of ‘Abbotswood’ in the following characteristics:
    • 1. Plants of the new Potentilla are more compact than plants of ‘Abbotswood’.
    • 2. Leaves of plants of the new Potentilla are pubescent whereas leaves of plants of ‘Abbotswood’ are glabrous.
    • 3. In The Netherlands, plants of the new Potentilla flower until November whereas plants of ‘Abbotswood’ flower until mid-September.
Plants of the new Potentilla can be compared to plants of Potentilla fruticosa ‘Red Lady’, disclosed in a U.S. Plant patent application Ser. No. 12/799,431. Plants of the new Potentilla differ primarily from plants of ‘Red Lady’ in flower color as plants of ‘Red Lady’ have red-colored flowers.
BRIEF DESCRIPTION OF THE PHOTOGRAPHS
The accompanying colored photographs illustrate the overall appearance of the new Potentilla plant, showing the colors as true as it is reasonably possible to obtain in colored reproductions of this type. Colors in the photographs may differ slightly from the color values cited in the detailed botanical description which accurately describe the colors of the new Potentilla plant.
The photograph on the first sheet comprises a side perspective view of a typical flowering plant of ‘White Lady’ grown in a container.
The photograph at the top of the second sheet is a close-up view of typical leaves and stems of ‘White Lady’.
The photograph at the bottom of the second sheet is a close-up view of typical flowering stems of ‘White Lady’.
 DETAILED BOTANICAL DESCRIPTION
The aforementioned photographs and following observations, measurements and values describe plants grown in two-liter containers during the autumn in an outdoor nursery in Boskoop, The Netherlands and under conditions which closely approximate commercial Potentilla production. During the production of the plants, day temperatures ranged from 8° C. to 18° C. and night temperatures ranged from 1° C. to 12° C. Plants were two years old when the photographs and the description were taken. In the description, color references are made to The Royal Horticultural Society Colour Chart, 2007 Edition, except where general terms of ordinary dictionary significance are used.
  • Botanical classification: Potentilla fruticosa ‘White Lady’.
  • Parentage: Self-pollination of Potentilla fruticosa ‘Abbotswood’, not patented.
  • Propagation:
      • Type.—By vegetative cuttings.
      • Time to initiate roots.—About 14 days at 20° C.
      • Time to develop roots.—About 40 days at 20° C.
      • Root description.—Fine, fibrous; brown in color.
      • Rooting habit.—Freely branching.
  • Plant description:
      • Plant form and growth habit.—Perennial deciduous shrub; upright and outwardly spreading plant habit, roughly globular in shape; moderately vigorous growth habit.
      • Branching habit.—Freely branching habit, usually about 21 lateral branches develop per plant; pinching enhances lateral branch development.
      • Plant height.—About 29.6 cm.
      • Plant diameter (area of spread).—About 40.3 cm.
  • Lateral branch description:
      • Length.—About 12.6 cm.
      • Diameter.—About 1.2 mm.
      • Internode length.—About 1.4 cm.
      • Strength.—Strong.
      • Texture.—Pubescent, rough; woody with development.
      • Color, developing.—Close to 181A to 181B.
      • Color, woody.—Between 174A and 177A.
  • Foliage description:
      • Arrangement.—Alternate; palmately compound with three leaflets per leaf; leaflets sessile.
      • Leaf length.—About 2.9 cm.
      • Leaf width.—About 3.3 cm.
      • Leaflet length.—About 1.9 cm.
      • Leaflet width.—About 1.4 cm.
      • Leaflet shape.—Narrowly obovate to elliptic.
      • Leaflet apex.—Short apiculate.
      • Leaflet base.—Attenuate.
      • Leaflet margin.—Entire.
      • Leaflet texture, upper and lower surfaces.—Sparsely pubescent.
      • Leaflet venation pattern.—Pinnate.
      • Leaflet color.—Developing leaves, upper surface: Close to N137C. Developing leaves, lower surface: Close to 138B. Mature leaves, upper surface: Close to 137A; venation, close to N137B. Mature leaves, lower surface: Close to 148C; venation, close to 148C to 148D.
      • Leaf petiole.—Length: About 1.2 cm. Diameter: About 0.75 mm. Texture, upper and lower surfaces: Smooth, glabrous. Color, upper and lower surfaces: Close to 144B to 144C.
  • Flower description:
      • Flower arrangement, shape and habit.—Single rotate flowers, flowers usually terminal and sometimes in pairs; flowers face upright; freely flowering habit, about six flowers and flower buds per lateral branch.
      • Fragrance.—None detected.
      • Natural flowering season.—Plants begin flowering about 7.5 months after planting and flower from the late spring into the late autumn in The Netherlands.
      • Flower longevity on the plant.—About five days; flowers not persistent.
      • Flower buds.—Length: About 8 mm. Diameter: About 5 mm. Shape: Ovate. Color: Close to 150B; apex, close to 144A.
      • Flowers.—Diameter: About 3.1 cm. Depth (height): About 9 mm.
      • Petals.—Arrangement: Five in a single whorl. Length: About 1.4 cm. Width: About 1.3 cm. Shape: Orbicular; slightly concave. Apex: Obtuse. Base: Attenuate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color: When opening, upper and lower surfaces: Close to NN155B. Fully opened, upper and lower surfaces: Close to NN155B.
      • Petaloids.—None observed.
      • Sepals.—Arrangement: Five in a single whorl. Length: About 8 mm. Width: About 3 mm. Shape: Ovate. Apex: Acute. Base: Broadly cuneate. Margin: Entire. Texture, upper and lower surfaces: Smooth, glabrous. Color: Immature and mature, upper surface: Close to 150B; apex, close to 144A. Immature and mature, lower surface: Close to 145A; apex, close to 144A.
      • Pedicels.—Strength: Moderately strong. Length: About 2.5 cm. Diameter: About 1 mm. Aspect: Erect. Texture: Smooth, glabrous. Color: Close to 145B.
      • Reproductive organs.—Stamens: Quantity per flower: About 30. Filament length: About 2 mm. Anther size: About 1 mm by 0.5 mm. Anther shape: Ovate. Anther color: Close to 10C. Pollen amount: Scarce. Pollen color: Close to 14A. Pistils: Quantity per flower: About 30. Pistil length: About 2 mm. Stigma color: Close to 3A. Style length: About 1 mm. Style color: Close to 3B to 3C. Ovary color: Close to 144B to 144C.
  • Temperature tolerance: Plants of the new Potentilla have been observed to be hardy to USDA Hardiness Zone 3 and to tolerate high temperatures of about 40° C.
  • Pathogen/pest resistance: Plants of the new Potentilla have not been shown to be resistant to pathogens and pests common to Potentilla.

Claims (1)

1. A new and distinct Potentilla plant named ‘White Lady’ as illustrated and described.
US12/799,431 2008-06-16 2010-04-23 Potentilla plant named ‘White Lady’ Active 2030-11-04 USPP22761P2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/799,431 USPP22761P2 (en) 2010-04-23 2010-04-23 Potentilla plant named ‘White Lady’
US13/759,291 US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/799,431 USPP22761P2 (en) 2010-04-23 2010-04-23 Potentilla plant named ‘White Lady’

Publications (1)

Publication Number Publication Date
USPP22761P2 true USPP22761P2 (en) 2012-05-29

Family

ID=46086472

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/799,431 Active 2030-11-04 USPP22761P2 (en) 2008-06-16 2010-04-23 Potentilla plant named ‘White Lady’
US13/759,291 Expired - Fee Related US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/759,291 Expired - Fee Related US9257613B2 (en) 2008-06-16 2013-02-05 Semiconductor light emitting device

Country Status (1)

Country Link
US (2) USPP22761P2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9524869B2 (en) * 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
US20140197374A1 (en) * 2011-08-17 2014-07-17 Samsung Electronics Co., Ltd. Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby
JP2015061068A (en) * 2013-09-20 2015-03-30 東芝ライテック株式会社 Light-emitting module and lighting device
JP2015061063A (en) * 2013-09-20 2015-03-30 東芝ライテック株式会社 Light-emitting module and lighting device
TWI514628B (en) * 2013-10-24 2015-12-21 Lextar Electronics Corp Electrode structure and light emitting diode structure having the same
US9634194B2 (en) * 2014-03-07 2017-04-25 Lextar Electronics Corporation Light-emitting diode chip
JP6039026B1 (en) * 2015-09-04 2016-12-07 Ｄｏｗａエレクトロニクス株式会社 Manufacturing method of n-type ohmic electrode, n-type ohmic electrode, n-type electrode, and group III nitride semiconductor light emitting device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69433926T2 (en) 1993-04-28 2005-07-21 Nichia Corp., Anan A semiconductor device of a gallium nitride III-V semiconductor compound
US6268618B1 (en) 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
US6936859B1 (en) * 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US6586043B1 (en) 2002-01-09 2003-07-01 Micron Technology, Inc. Methods of electroless deposition of nickel, methods of forming under bump metallurgy, and constructions comprising solder bumps
JP2004349301A (en) 2003-05-20 2004-12-09 Sharp Corp Light emitting diode element electrode and light emitting diode element
US7557380B2 (en) 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
WO2006011672A1 (en) 2004-07-29 2006-02-02 Showa Denko K.K. Positive electrode for semiconductor light-emitting device
CN100590898C (en) 2004-07-29 2010-02-17 昭和电工株式会社 Positive electrode for semiconductor light-emitting device
TWI257714B (en) 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
JP2008041866A (en) 2006-08-04 2008-02-21 Nichia Chem Ind Ltd Nitride semiconductor element
KR100675208B1 (en) 2006-10-26 2007-01-29 삼성전기주식회사 High brightness nitride semiconductor light emitting device
KR100910964B1 (en) 2007-08-09 2009-08-05 포항공과대학교 산학협력단 Ohmic electrode and method for forming the same
CN101971368A (en) 2008-03-13 2011-02-09 昭和电工株式会社 Semiconductor light-emitting device and method for manufacturing the same
US8227276B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion

Also Published As

Publication number Publication date
US20130146922A1 (en) 2013-06-13
US9257613B2 (en) 2016-02-09

Similar Documents

Publication Publication Date Title
USPP22761P2 (en) Potentilla plant named ‘White Lady’
USPP19935P2 (en) Buddleja plant named ‘Butterfly Heaven’
USPP21832P2 (en) Helleborus plant named ‘Cinderella’
USPP22018P2 (en) Helleborus plant named ‘COSEH 750’
USPP22767P2 (en) Potentilla plant named ‘Red Lady’
USPP22020P2 (en) Helleborus plant named ‘HLR 180’
USPP21504P2 (en) Helleborus plant named ‘HLR 160’
USPP19103P2 (en) Nierembergia plant named ‘Sunnipariho’
USPP29169P2 (en) Tecoma plant named ‘Sunhortedai’
USPP19838P2 (en) Potentilla plant named ‘Yellow Sunrise’
USPP27972P2 (en) Hypericum plant named ‘Allpista’
USPP27125P2 (en) Hypericum plant named ‘Allgrandeur’
USPP22019P2 (en) Helleborus plant named ‘HLR 170’
USPP22326P2 (en) Viburnum plant named ‘JWW1’
USPP20084P2 (en) Fuchsia plant named ‘Goetzimpro’
USPP26439P2 (en) Verbena plant named ‘Sunmariapri’
USPP25157P2 (en) Verbena plant named ‘Sunmarirosta’
USPP26854P2 (en) Phlox plant named ‘PHL090201’
USPP21507P2 (en) Sedum plant named ‘Twinkling Star’
USPP17952P2 (en) Hibiscus plant named ‘Montego Wind’
USPP24255P2 (en) Kalanchoe plant named ‘Katarore’
USPP21126P2 (en) Helleborus plant named ‘EMMA’
USPP21904P2 (en) Gaura plant named ‘Summer Emotions’
USPP24262P2 (en) Fuchsia plant named ‘USFUC0901’
USPP19038P2 (en) Rose plant named ‘Evera153’

Legal Events

Date Code Title Description
AS Assignment

Owner name: SPRING MEADOW NURSERY, INC., MICHIGAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KOLSTER, PIETER;REEL/FRAME:025152/0530

Effective date: 20100428