USH1543H - Ferroelectric/silicide/silicon multilayer and method of making the multilayer - Google Patents
Ferroelectric/silicide/silicon multilayer and method of making the multilayer Download PDFInfo
- Publication number
- USH1543H USH1543H US08/015,500 US1550093A USH1543H US H1543 H USH1543 H US H1543H US 1550093 A US1550093 A US 1550093A US H1543 H USH1543 H US H1543H
- Authority
- US
- United States
- Prior art keywords
- silicide
- ferroelectric
- multilayer
- silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 24
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title description 2
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 7
- 239000010941 cobalt Substances 0.000 claims abstract description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910002115 bismuth titanate Inorganic materials 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Definitions
- the invention relates in general to a thin film deposition of ferroelectric materials and in particular to a ferroelectric/silicide/silicon multilayer and to a method of making the multilayer.
- ferroelectric thin film For the successful development of a ferroelectric thin film, one must be able to epitaxially grow the ferroelectric on some type of substrate. For measuring the electrical properties of a ferroelectric thin film or for the design of any device that employs a ferroelectric thin film one must be able to deposit the thin film onto a material suitable as an electrode and referred to here as the bottom electrode. A second electrode can then be deposited on top of the ferroelectric film, There has been difficulty in promoting epitaxial growth of the film while simultaneously providing a bottom electrode,
- the general object of this invention is to provide a ferroelectric thin film multilayer for use in any electronic device that employs ferroelectric thin films such as sensory elements or capacitors.
- a more specific object of the invention is to provide a barrier layer between the ferroelectric film and a silicon substrate that will also serve as an electrode.
- a still further object of the invention is to provide a barrier for epitaxial growth of ferroelectric on silicon and also serve as the bottom electrode for any ferroelectric device fashioned from the thin film material.
- FIG. 1 illustrates schematically how one would form the Co- or Ni- silicide/ferroelectric multilayer structure
- a Co or Ni layer is deposited by sputtering, evaporation, laser ablation, or any other suitable means.
- the substrate is then annealed in an inert atmosphere at a temperature of about 750° C. that is sufficient to form a layer of CoSi 2 or NiSi 2 on top of the silicon.
- the cobalt silicide is cubic with a lattice parameter of 5.37A.
- Nickel silicide is cubic with a lattice parameter of 5.4A.
- One ferroelectric material that is particularly appropriate is bismuth titanate (Bi 4 Ti 3 O 12 ) because the lattice parameters are 5.41A (a axis) and 5.45A (b axis).
- One advantage of the deposition method shown in FIG. 1 is that the formation of the silicide layer during the anneal also acts to eliminate surface impurities such as oxides.
- the silicide barrier layer can be formed in the same chamber used to deposit the ferroelectric film. This takes advantage of the fact that when the silicide grows on the silicon; the surface becomes free of many contaminants, particularly oxides. One is then able to deposit a ferroelectric onto a contaminant free surface.
- the silicon substrate is about 250 to 500 microns in thickness
- the silicide layer is about 0.02 to 0.2 micron in thickness
- the ferroelectric layer is about 0.1 to 1 micron in thickness.
Abstract
A ferroelectric/silicide/silicon multilayer is made by a method including e steps of
(A) depositing a layer of cobalt or nickel on a silicon substrate,
(B) annealing the silicon substrate in an inert atmosphere at a temperature of about 750° C. to form a layer of cobalt silicide or nickel silicide on top of the silicon, and
(C) depositing a ferroelectric layer onto the silicide layer.
Description
The invention described herein may be manufactured, used and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon.
The invention relates in general to a thin film deposition of ferroelectric materials and in particular to a ferroelectric/silicide/silicon multilayer and to a method of making the multilayer.
For the successful development of a ferroelectric thin film, one must be able to epitaxially grow the ferroelectric on some type of substrate. For measuring the electrical properties of a ferroelectric thin film or for the design of any device that employs a ferroelectric thin film one must be able to deposit the thin film onto a material suitable as an electrode and referred to here as the bottom electrode. A second electrode can then be deposited on top of the ferroelectric film, There has been difficulty in promoting epitaxial growth of the film while simultaneously providing a bottom electrode,
The general object of this invention is to provide a ferroelectric thin film multilayer for use in any electronic device that employs ferroelectric thin films such as sensory elements or capacitors. A more specific object of the invention is to provide a barrier layer between the ferroelectric film and a silicon substrate that will also serve as an electrode. A still further object of the invention is to provide a barrier for epitaxial growth of ferroelectric on silicon and also serve as the bottom electrode for any ferroelectric device fashioned from the thin film material.
It has now been found that the aforementioned object can be attained by using a cobalt silicide (CoSi2) or nickel silicide (NiSi2) barrier layer to promote epitaxial growth and to serve as the bottom electrode,
FIG. 1 illustrates schematically how one would form the Co- or Ni- silicide/ferroelectric multilayer structure,
Beginning with a single crystal silicon substrate, a Co or Ni layer is deposited by sputtering, evaporation, laser ablation, or any other suitable means. The substrate is then annealed in an inert atmosphere at a temperature of about 750° C. that is sufficient to form a layer of CoSi2 or NiSi2 on top of the silicon. The cobalt silicide is cubic with a lattice parameter of 5.37A. Nickel silicide is cubic with a lattice parameter of 5.4A. Once the silicide has formed, one may deposit the ferroelectric layer by sputtering, laser ablation, molecular beam epitaxy or any other appropriate means. One ferroelectric material that is particularly appropriate is bismuth titanate (Bi4 Ti3 O12) because the lattice parameters are 5.41A (a axis) and 5.45A (b axis). One advantage of the deposition method shown in FIG. 1 is that the formation of the silicide layer during the anneal also acts to eliminate surface impurities such as oxides.
In the aforedescribed method, one may form the silicide layer by methods other than that shown in FIG. 1. As an example, one may deposit the silicide in one step by using molecular beam epitaxy to deposit CoSi2 or NiSi2 directly onto the silicon. This method does not have the advantage of eliminating surface impurities.
In the aforedescribed method, the silicide barrier layer can be formed in the same chamber used to deposit the ferroelectric film. This takes advantage of the fact that when the silicide grows on the silicon; the surface becomes free of many contaminants, particularly oxides. One is then able to deposit a ferroelectric onto a contaminant free surface.
In the ferroelectric/silicide/silicon multilayer of the invention, the silicon substrate is about 250 to 500 microns in thickness, the silicide layer is about 0.02 to 0.2 micron in thickness, and the ferroelectric layer is about 0.1 to 1 micron in thickness.
We wish it to be understood that we do not desire to be limited to the exact details of construction as described for obvious modifications will occur to a person skilled in the art.
Claims (4)
1. A ferroelectric/silicide/silicon multilayer wherein the silicide is selected from the group consisting of cobalt silicide and nickel silicide.
2. A multilayer according to claim 1 wherein the ferroelectric is bismuth titanate, wherein the silicide is selected from the group consisting of cobalt silicide and nickel silicide and wherein the silicon is single crystal silicon.
3. A multilayer according to claim 2 wherein the silicide is cobalt silicide.
4. A multilayer according to claim 2 wherein the silicide is nickel silicide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/015,500 USH1543H (en) | 1993-02-01 | 1993-02-01 | Ferroelectric/silicide/silicon multilayer and method of making the multilayer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/015,500 USH1543H (en) | 1993-02-01 | 1993-02-01 | Ferroelectric/silicide/silicon multilayer and method of making the multilayer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USH1543H true USH1543H (en) | 1996-06-04 |
Family
ID=21771769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US08/015,500 Abandoned USH1543H (en) | 1993-02-01 | 1993-02-01 | Ferroelectric/silicide/silicon multilayer and method of making the multilayer |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USH1543H (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251777B1 (en) | 1999-03-05 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company | Thermal annealing method for forming metal silicide layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5053917A (en) * | 1989-08-30 | 1991-10-01 | Nec Corporation | Thin film capacitor and manufacturing method thereof |
| US5070385A (en) * | 1989-10-20 | 1991-12-03 | Radiant Technologies | Ferroelectric non-volatile variable resistive element |
| US5099305A (en) * | 1989-02-08 | 1992-03-24 | Seiko Epson Corporation | Platinum capacitor mos memory having lattice matched pzt |
| US5122923A (en) * | 1989-08-30 | 1992-06-16 | Nec Corporation | Thin-film capacitors and process for manufacturing the same |
-
1993
- 1993-02-01 US US08/015,500 patent/USH1543H/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5099305A (en) * | 1989-02-08 | 1992-03-24 | Seiko Epson Corporation | Platinum capacitor mos memory having lattice matched pzt |
| US5053917A (en) * | 1989-08-30 | 1991-10-01 | Nec Corporation | Thin film capacitor and manufacturing method thereof |
| US5122923A (en) * | 1989-08-30 | 1992-06-16 | Nec Corporation | Thin-film capacitors and process for manufacturing the same |
| US5070385A (en) * | 1989-10-20 | 1991-12-03 | Radiant Technologies | Ferroelectric non-volatile variable resistive element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251777B1 (en) | 1999-03-05 | 2001-06-26 | Taiwan Semiconductor Manufacturing Company | Thermal annealing method for forming metal silicide layer |
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| Date | Code | Title | Description |
|---|---|---|---|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |