USD786951S1 - Reaction tube - Google Patents
Reaction tube Download PDFInfo
- Publication number
- USD786951S1 USD786951S1 US29/536,780 US201529536780F USD786951S US D786951 S1 USD786951 S1 US D786951S1 US 201529536780 F US201529536780 F US 201529536780F US D786951 S USD786951 S US D786951S
- Authority
- US
- United States
- Prior art keywords
- reaction tube
- view
- taken along
- along line
- cross sectional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-003958 | 2015-01-13 | ||
| JPD2015-3958F JP1535456S (enExample) | 2015-02-25 | 2015-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USD786951S1 true USD786951S1 (en) | 2017-05-16 |
Family
ID=54293784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US29/536,780 Active USD786951S1 (en) | 2015-02-25 | 2015-08-19 | Reaction tube |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | USD786951S1 (enExample) |
| JP (1) | JP1535456S (enExample) |
| TW (1) | TWD175118S (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP1679855S (enExample) | 2020-06-15 | 2021-02-22 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5743967A (en) * | 1995-07-13 | 1998-04-28 | Semiconductor Energy Laboratory Co. | Low pressure CVD apparatus |
| US9054046B2 (en) * | 2011-12-09 | 2015-06-09 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and method of processing substrate |
-
2015
- 2015-02-25 JP JPD2015-3958F patent/JP1535456S/ja active Active
- 2015-08-19 US US29/536,780 patent/USD786951S1/en active Active
- 2015-08-24 TW TW104304616F patent/TWD175118S/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5743967A (en) * | 1995-07-13 | 1998-04-28 | Semiconductor Energy Laboratory Co. | Low pressure CVD apparatus |
| US9054046B2 (en) * | 2011-12-09 | 2015-06-09 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device and method of processing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TWD175118S (zh) | 2016-04-21 |
| JP1535456S (enExample) | 2015-10-19 |
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