USB504503I5 - - Google Patents
Info
- Publication number
- USB504503I5 USB504503I5 US50450374A USB504503I5 US B504503 I5 USB504503 I5 US B504503I5 US 50450374 A US50450374 A US 50450374A US B504503 I5 USB504503 I5 US B504503I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/504,503 US3999210A (en) | 1972-08-28 | 1974-09-09 | FET having a linear impedance characteristic over a wide range of frequency |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JA47-85950 | 1972-08-28 | ||
| JP8595072A JPS4941081A (no) | 1972-08-28 | 1972-08-28 | |
| US39146473A | 1973-08-24 | 1973-08-24 | |
| US05/504,503 US3999210A (en) | 1972-08-28 | 1974-09-09 | FET having a linear impedance characteristic over a wide range of frequency |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US39146473A Continuation | 1972-08-28 | 1973-08-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| USB504503I5 true USB504503I5 (no) | 1976-03-09 |
| US3999210A US3999210A (en) | 1976-12-21 |
Family
ID=27305005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/504,503 Expired - Lifetime US3999210A (en) | 1972-08-28 | 1974-09-09 | FET having a linear impedance characteristic over a wide range of frequency |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3999210A (no) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4490734A (en) * | 1972-05-13 | 1984-12-25 | Sony Corporation | Variable impedance circuit employing an RIS field effect transistor |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| US4600933A (en) * | 1976-12-14 | 1986-07-15 | Standard Microsystems Corporation | Semiconductor integrated circuit structure with selectively modified insulation layer |
| US4240097A (en) * | 1977-05-31 | 1980-12-16 | Texas Instruments Incorporated | Field-effect transistor structure in multilevel polycrystalline silicon |
| JPS57133712A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Constituting method of delay circuit in master slice ic |
| NL8104414A (nl) * | 1981-09-25 | 1983-04-18 | Philips Nv | Halfgeleiderinrichting met veldeffekttransistor. |
| DE3370245D1 (de) * | 1982-11-27 | 1987-04-16 | Nissan Motor | A mos transistor |
| JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Ｍｏｓトランジスタ |
| US4920388A (en) * | 1987-02-17 | 1990-04-24 | Siliconix Incorporated | Power transistor with integrated gate resistor |
| EP0287195A1 (en) * | 1987-02-17 | 1988-10-19 | SILICONIX Incorporated | Power MOS transistor with integrated resistor |
| US5570119A (en) * | 1988-07-26 | 1996-10-29 | Canon Kabushiki Kaisha | Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus |
| US5045870A (en) * | 1990-04-02 | 1991-09-03 | International Business Machines Corporation | Thermal ink drop on demand devices on a single chip with vertical integration of driver device |
| KR940005293B1 (ko) * | 1991-05-23 | 1994-06-15 | 삼성전자 주식회사 | 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조 |
| JP4855668B2 (ja) * | 2004-02-24 | 2012-01-18 | セイコーインスツル株式会社 | 電界効果トランジスタの高電圧動作方法とそのバイアス回路およびその高電圧動作回路要素 |
| JP4828817B2 (ja) * | 2004-02-24 | 2011-11-30 | セイコーインスツル株式会社 | 電界効果トランジスタの高電圧動作方法とそのバイアス回路およびその高電圧動作回路要素 |
| JP5040387B2 (ja) * | 2007-03-20 | 2012-10-03 | 株式会社デンソー | 半導体装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436622A (en) * | 1966-12-20 | 1969-04-01 | Texas Instruments Inc | Compound channel insulated gate triode |
| US3676921A (en) * | 1967-06-08 | 1972-07-18 | Philips Corp | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
-
1974
- 1974-09-09 US US05/504,503 patent/US3999210A/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3436622A (en) * | 1966-12-20 | 1969-04-01 | Texas Instruments Inc | Compound channel insulated gate triode |
| US3676921A (en) * | 1967-06-08 | 1972-07-18 | Philips Corp | Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same |
| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
Non-Patent Citations (1)
| Title |
|---|
| C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Electron Dev., Vol. ED-18, No. 7 July 1971. pp. 418-425. * |
Also Published As
| Publication number | Publication date |
|---|---|
| US3999210A (en) | 1976-12-21 |