USB504503I5 - - Google Patents

Info

Publication number
USB504503I5
USB504503I5 US50450374A USB504503I5 US B504503 I5 USB504503 I5 US B504503I5 US 50450374 A US50450374 A US 50450374A US B504503 I5 USB504503 I5 US B504503I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8595072A external-priority patent/JPS4941081A/ja
Application filed filed Critical
Priority to US05/504,503 priority Critical patent/US3999210A/en
Publication of USB504503I5 publication Critical patent/USB504503I5/en
Application granted granted Critical
Publication of US3999210A publication Critical patent/US3999210A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
US05/504,503 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency Expired - Lifetime US3999210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/504,503 US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP8595072A JPS4941081A (en) 1972-08-28 1972-08-28
JA47-85950 1972-08-28
US39146473A 1973-08-24 1973-08-24
US05/504,503 US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US39146473A Continuation 1972-08-28 1973-08-24

Publications (2)

Publication Number Publication Date
USB504503I5 true USB504503I5 (en) 1976-03-09
US3999210A US3999210A (en) 1976-12-21

Family

ID=27305005

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/504,503 Expired - Lifetime US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Country Status (1)

Country Link
US (1) US3999210A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490734A (en) * 1972-05-13 1984-12-25 Sony Corporation Variable impedance circuit employing an RIS field effect transistor
NL7606483A (en) * 1976-06-16 1977-12-20 Philips Nv DEVICE FOR MIXING SIGNALS.
US4600933A (en) * 1976-12-14 1986-07-15 Standard Microsystems Corporation Semiconductor integrated circuit structure with selectively modified insulation layer
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
NL8104414A (en) * 1981-09-25 1983-04-18 Philips Nv SEMICONDUCTOR DEVICE WITH FIELD-EFFECT TRANSISTOR.
JPS5998557A (en) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Mos transistor
DE3370245D1 (en) * 1982-11-27 1987-04-16 Nissan Motor A MOS TRANSISTOR
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
EP0287195A1 (en) * 1987-02-17 1988-10-19 SILICONIX Incorporated Power MOS transistor with integrated resistor
US5570119A (en) * 1988-07-26 1996-10-29 Canon Kabushiki Kaisha Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus
US5045870A (en) * 1990-04-02 1991-09-03 International Business Machines Corporation Thermal ink drop on demand devices on a single chip with vertical integration of driver device
KR940005293B1 (en) * 1991-05-23 1994-06-15 삼성전자 주식회사 Mosfet and fabricating method thereof
JP4855668B2 (en) * 2004-02-24 2012-01-18 セイコーインスツル株式会社 High-voltage operation method of field effect transistor, its bias circuit, and its high-voltage operation circuit element
JP4828817B2 (en) * 2004-02-24 2011-11-30 セイコーインスツル株式会社 High-voltage operation method of field effect transistor, its bias circuit, and its high-voltage operation circuit element
JP5040387B2 (en) * 2007-03-20 2012-10-03 株式会社デンソー Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Electron Dev., Vol. ED-18, No. 7 July 1971. pp. 418-425. *

Also Published As

Publication number Publication date
US3999210A (en) 1976-12-21

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