USB504503I5 - - Google Patents

Info

Publication number
USB504503I5
USB504503I5 US50450374A USB504503I5 US B504503 I5 USB504503 I5 US B504503I5 US 50450374 A US50450374 A US 50450374A US B504503 I5 USB504503 I5 US B504503I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP47085950A external-priority patent/JPS4941081A/ja
Application filed filed Critical
Priority to US05/504,503 priority Critical patent/US3999210A/en
Publication of USB504503I5 publication Critical patent/USB504503I5/en
Application granted granted Critical
Publication of US3999210A publication Critical patent/US3999210A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/605—Source, drain, or gate electrodes for FETs comprising highly resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
US05/504,503 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency Expired - Lifetime US3999210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/504,503 US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP47085950A JPS4941081A (OSRAM) 1972-08-28 1972-08-28
JA47-85950 1972-08-28
US39146473A 1973-08-24 1973-08-24
US05/504,503 US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US39146473A Continuation 1972-08-28 1973-08-24

Publications (2)

Publication Number Publication Date
USB504503I5 true USB504503I5 (OSRAM) 1976-03-09
US3999210A US3999210A (en) 1976-12-21

Family

ID=27305005

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/504,503 Expired - Lifetime US3999210A (en) 1972-08-28 1974-09-09 FET having a linear impedance characteristic over a wide range of frequency

Country Status (1)

Country Link
US (1) US3999210A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110776A (en) 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4157557A (en) 1973-07-23 1979-06-05 Sony Corporation Control circuit for signal transmission

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490734A (en) * 1972-05-13 1984-12-25 Sony Corporation Variable impedance circuit employing an RIS field effect transistor
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4600933A (en) * 1976-12-14 1986-07-15 Standard Microsystems Corporation Semiconductor integrated circuit structure with selectively modified insulation layer
US4240097A (en) * 1977-05-31 1980-12-16 Texas Instruments Incorporated Field-effect transistor structure in multilevel polycrystalline silicon
JPS57133712A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Constituting method of delay circuit in master slice ic
NL8104414A (nl) * 1981-09-25 1983-04-18 Philips Nv Halfgeleiderinrichting met veldeffekttransistor.
DE3370245D1 (de) * 1982-11-27 1987-04-16 Nissan Motor A mos transistor
JPS5998557A (ja) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
EP0287195A1 (en) * 1987-02-17 1988-10-19 SILICONIX Incorporated Power MOS transistor with integrated resistor
US5570119A (en) * 1988-07-26 1996-10-29 Canon Kabushiki Kaisha Multilayer device having integral functional element for use with an ink jet recording apparatus, and recording apparatus
US5045870A (en) * 1990-04-02 1991-09-03 International Business Machines Corporation Thermal ink drop on demand devices on a single chip with vertical integration of driver device
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
JP4828817B2 (ja) * 2004-02-24 2011-11-30 セイコーインスツル株式会社 電界効果トランジスタの高電圧動作方法とそのバイアス回路およびその高電圧動作回路要素
JP4855668B2 (ja) * 2004-02-24 2012-01-18 セイコーインスツル株式会社 電界効果トランジスタの高電圧動作方法とそのバイアス回路およびその高電圧動作回路要素
JP5040387B2 (ja) * 2007-03-20 2012-10-03 株式会社デンソー 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3676921A (en) * 1967-06-08 1972-07-18 Philips Corp Semiconductor device comprising an insulated gate field effect transistor and method of manufacturing the same
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Electron Dev., Vol. ED-18, No. 7 July 1971. pp. 418-425. *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157557A (en) 1973-07-23 1979-06-05 Sony Corporation Control circuit for signal transmission
US4110776A (en) 1976-09-27 1978-08-29 Texas Instruments Incorporated Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer

Also Published As

Publication number Publication date
US3999210A (en) 1976-12-21

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