USB480292I5 - - Google Patents

Info

Publication number
USB480292I5
USB480292I5 US48029274A USB480292I5 US B480292 I5 USB480292 I5 US B480292I5 US 48029274 A US48029274 A US 48029274A US B480292 I5 USB480292 I5 US B480292I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of USB480292I5 publication Critical patent/USB480292I5/en
Application granted granted Critical
Publication of US3994011A publication Critical patent/US3994011A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
US05/480,292 1973-09-03 1974-06-17 High withstand voltage-semiconductor device with shallow grooves between semiconductor region and field limiting rings Expired - Lifetime US3994011A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP48098295A JPS5242634B2 (enrdf_load_stackoverflow) 1973-09-03 1973-09-03
JA48-98295 1973-09-03

Publications (2)

Publication Number Publication Date
USB480292I5 true USB480292I5 (enrdf_load_stackoverflow) 1976-03-16
US3994011A US3994011A (en) 1976-11-23

Family

ID=14215919

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/480,292 Expired - Lifetime US3994011A (en) 1973-09-03 1974-06-17 High withstand voltage-semiconductor device with shallow grooves between semiconductor region and field limiting rings

Country Status (2)

Country Link
US (1) US3994011A (enrdf_load_stackoverflow)
JP (1) JPS5242634B2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262356A3 (en) * 1986-09-30 1989-09-20 Siemens Aktiengesellschaft Process for manufacturing a high-voltage resistant pn junction

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922383B2 (ja) * 1975-05-23 1984-05-26 三菱電機株式会社 半導体装置
JPS5227274A (en) * 1975-08-25 1977-03-01 Hitachi Ltd Semiconductor unit and its manufacturing process
JPS5264881A (en) * 1975-11-25 1977-05-28 Hitachi Ltd Semiconductor device and its production
US4384299A (en) * 1976-10-29 1983-05-17 Massachusetts Institute Of Technology Capacitor memory and methods for reading, writing, and fabricating capacitor memories
US4125853A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated circuit transistor
US4131910A (en) * 1977-11-09 1978-12-26 Bell Telephone Laboratories, Incorporated High voltage semiconductor devices
CH633907A5 (de) * 1978-10-10 1982-12-31 Bbc Brown Boveri & Cie Leistungshalbleiterbauelement mit zonen-guard-ringen.
JPS55150265A (en) * 1979-05-11 1980-11-22 Toyo Electric Mfg Co Ltd Flat type diode with pressing force strengthening mechanism
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
JP3923256B2 (ja) 1999-01-07 2007-05-30 インフィネオン テクノロジース アクチエンゲゼルシャフト ドーピングされた領域を分離するためのトレンチを備えた半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
US3241010A (en) * 1962-03-23 1966-03-15 Texas Instruments Inc Semiconductor junction passivation
GB1078273A (en) * 1964-10-19 1967-08-09 Sony Corp Semiconductor device
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3492174A (en) * 1966-03-19 1970-01-27 Sony Corp Method of making a semiconductor device
US3489622A (en) * 1967-05-18 1970-01-13 Ibm Method of making high frequency transistors
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL169121C (nl) * 1970-07-10 1982-06-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0262356A3 (en) * 1986-09-30 1989-09-20 Siemens Aktiengesellschaft Process for manufacturing a high-voltage resistant pn junction

Also Published As

Publication number Publication date
JPS5049980A (enrdf_load_stackoverflow) 1975-05-06
JPS5242634B2 (enrdf_load_stackoverflow) 1977-10-25
US3994011A (en) 1976-11-23

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