USB361265I5 - - Google Patents
Info
- Publication number
- USB361265I5 USB361265I5 US36126573A USB361265I5 US B361265 I5 USB361265 I5 US B361265I5 US 36126573 A US36126573 A US 36126573A US B361265 I5 USB361265 I5 US B361265I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4961272A JPS539712B2 (fr) | 1972-05-18 | 1972-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| USB361265I5 true USB361265I5 (fr) | 1975-01-28 |
| US3923569A US3923569A (en) | 1975-12-02 |
Family
ID=12836043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US361265A Expired - Lifetime US3923569A (en) | 1972-05-18 | 1973-05-17 | Method of etching a semiconductor element |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3923569A (fr) |
| JP (1) | JPS539712B2 (fr) |
| CA (1) | CA988628A (fr) |
| DE (1) | DE2325106A1 (fr) |
| FR (1) | FR2184995B1 (fr) |
| GB (1) | GB1426600A (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53113459U (fr) * | 1977-02-18 | 1978-09-09 | ||
| US4159917A (en) * | 1977-05-27 | 1979-07-03 | Eastman Kodak Company | Method for use in the manufacture of semiconductor devices |
| US4207138A (en) * | 1979-01-17 | 1980-06-10 | Rca Corporation | Mercury vapor leaching from microelectronic substrates |
| JPS55123958A (en) * | 1979-03-15 | 1980-09-24 | Tokyo Shibaura Electric Co | Air conditioner |
| US4366186A (en) * | 1979-09-27 | 1982-12-28 | Bell Telephone Laboratories, Incorporated | Ohmic contact to p-type InP |
| US4285763A (en) * | 1980-01-29 | 1981-08-25 | Bell Telephone Laboratories, Incorporated | Reactive ion etching of III-V semiconductor compounds |
| US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
| US4689115A (en) * | 1985-04-26 | 1987-08-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Gaseous etching process |
| US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
| FR3038127B1 (fr) * | 2015-06-24 | 2017-06-23 | Commissariat Energie Atomique | Procede de fabrication d'une pluralite de dipoles en forme d'ilots ayant des electrodes auto-alignees |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6501786A (fr) * | 1964-02-26 | 1965-08-27 | ||
| FR1450842A (fr) * | 1964-07-20 | 1966-06-24 | Siemens Ag | Procédé pour réaliser des couches d'oxyde, planes et très pures, sur des monocristaux de silicium |
| US3390011A (en) * | 1965-03-23 | 1968-06-25 | Texas Instruments Inc | Method of treating planar junctions |
| US3518132A (en) * | 1966-07-12 | 1970-06-30 | Us Army | Corrosive vapor etching process for semiconductors using combined vapors of hydrogen fluoride and nitrous oxide |
-
1972
- 1972-05-18 JP JP4961272A patent/JPS539712B2/ja not_active Expired
-
1973
- 1973-05-17 DE DE2325106A patent/DE2325106A1/de active Pending
- 1973-05-17 FR FR7317978A patent/FR2184995B1/fr not_active Expired
- 1973-05-17 US US361265A patent/US3923569A/en not_active Expired - Lifetime
- 1973-05-18 GB GB2373673A patent/GB1426600A/en not_active Expired
- 1973-05-18 CA CA171,822A patent/CA988628A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3923569A (en) | 1975-12-02 |
| JPS539712B2 (fr) | 1978-04-07 |
| FR2184995B1 (fr) | 1976-05-28 |
| JPS4916378A (fr) | 1974-02-13 |
| DE2325106A1 (de) | 1973-11-29 |
| CA988628A (en) | 1976-05-04 |
| GB1426600A (en) | 1976-03-03 |
| FR2184995A1 (fr) | 1973-12-28 |